GB1377566A - Device for multiplying free electrons - Google Patents
Device for multiplying free electronsInfo
- Publication number
- GB1377566A GB1377566A GB1868272A GB1868272A GB1377566A GB 1377566 A GB1377566 A GB 1377566A GB 1868272 A GB1868272 A GB 1868272A GB 1868272 A GB1868272 A GB 1868272A GB 1377566 A GB1377566 A GB 1377566A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- conductor
- areas
- multiplying
- electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/22—Dynodes consisting of electron-permeable material, e.g. foil, grid, tube, venetian blind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/10—Dynodes
Abstract
1377566 Electron beam apparatus LICENTIA PATENT-VERWALTUNGS GmbH 21 April 1972 [24 April 1971] 18682/72 Heading H1D An electron multiplier comprises a semiconductor 4, Fig. 1, which is mechanically reinforced and divided into discrete regions on its input surface and provided with an emissive coating 6 on its output surface. A disc of semiconductor material such as Zn doped GaAs or Si doped with B with a charge carrier concentration greater than 10<SP>19</SP>/cm<SP>3</SP> may be selectively etched to leave reinforcing areas 5 and to form the blind holes 3 terminating in the electron multiplying areas 4 which should be at least as thick as the penetration depth of the incident electrons but no thicker than the diffusion -length of the generated electrons with thermal energy. The coating 6 may be a few atoms thick of electro-positive metal such as caesium. The surface 4 may be more strongly doped to form a P + layer. In a modification, Fig. 3 (not shown), the surface 5 is covered with insulation, e.g. SiO 2 if the semi-conductor is silicon, which is in turn covered by a conductive layer of aluminium or gold which is maintained at a negative potential relative to the semi-conductor; alternatively the conductive layer may be omitted, the insulating layer then being charged negatively by the incident electrons to create a field which diverts electrons away from areas 5 and towards the multiplying areas 4. In a further modification, Fig. 2 (not shown), the reinforcing grid is of different material from the semi-conductor. A thick semi-conductor plate may be joined to a grid-like carrier plate of nickel or conductive glass by gluing, sintering, soldering, or pressing, and the semi-conductor plate is then reduced to the required thickness by etching. Alternatively a semi-conductor coating is formed by epitaxial deposition on a flat support plate in which apertures are subsequently formed. The support plate may be another semi-conductor with similar crystal structure or a metal such as molybdenum. The multiplier may be used in an image intensifier (Fig. 4, not shown) or in an oscillograph tube (Fig. 5, not shown).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19712120235 DE2120235C3 (en) | 1971-04-24 | 1971-04-24 | Device for multiplying electrons |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1377566A true GB1377566A (en) | 1974-12-18 |
Family
ID=5805889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1868272A Expired GB1377566A (en) | 1971-04-24 | 1972-04-21 | Device for multiplying free electrons |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE2120235C3 (en) |
FR (1) | FR2134459B1 (en) |
GB (1) | GB1377566A (en) |
NL (1) | NL7205448A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2117173A (en) * | 1982-03-04 | 1983-10-05 | Philips Nv | Devices for picking up or displaying images and semiconductor devices for use in such a device |
GB2170648A (en) * | 1985-02-01 | 1986-08-06 | Raytheon Co | Secondary emission cathode |
WO2004088702A2 (en) * | 2003-03-25 | 2004-10-14 | Itt Manufacturing Enterprises, Inc. | Image intensifier and electron multiplier therefor |
GB2409927B (en) * | 2004-01-09 | 2006-09-27 | Microsaic Systems Ltd | Micro-engineered electron multipliers |
-
1971
- 1971-04-24 DE DE19712120235 patent/DE2120235C3/en not_active Expired
-
1972
- 1972-04-21 GB GB1868272A patent/GB1377566A/en not_active Expired
- 1972-04-21 NL NL7205448A patent/NL7205448A/xx not_active Application Discontinuation
- 1972-04-24 FR FR7214514A patent/FR2134459B1/fr not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2117173A (en) * | 1982-03-04 | 1983-10-05 | Philips Nv | Devices for picking up or displaying images and semiconductor devices for use in such a device |
GB2170648A (en) * | 1985-02-01 | 1986-08-06 | Raytheon Co | Secondary emission cathode |
US4677342A (en) * | 1985-02-01 | 1987-06-30 | Raytheon Company | Semiconductor secondary emission cathode and tube |
GB2170648B (en) * | 1985-02-01 | 1989-07-26 | Raytheon Co | Crossed-field tube |
WO2004088702A2 (en) * | 2003-03-25 | 2004-10-14 | Itt Manufacturing Enterprises, Inc. | Image intensifier and electron multiplier therefor |
WO2004088702A3 (en) * | 2003-03-25 | 2005-03-03 | Itt Mfg Enterprises Inc | Image intensifier and electron multiplier therefor |
GB2409927B (en) * | 2004-01-09 | 2006-09-27 | Microsaic Systems Ltd | Micro-engineered electron multipliers |
Also Published As
Publication number | Publication date |
---|---|
DE2120235A1 (en) | 1972-11-02 |
FR2134459A1 (en) | 1972-12-08 |
DE2120235C3 (en) | 1979-09-06 |
DE2120235B2 (en) | 1979-01-11 |
NL7205448A (en) | 1972-10-26 |
FR2134459B1 (en) | 1979-01-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
746 | Register noted 'licences of right' (sect. 46/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |