GB1377566A - Device for multiplying free electrons - Google Patents

Device for multiplying free electrons

Info

Publication number
GB1377566A
GB1377566A GB1868272A GB1868272A GB1377566A GB 1377566 A GB1377566 A GB 1377566A GB 1868272 A GB1868272 A GB 1868272A GB 1868272 A GB1868272 A GB 1868272A GB 1377566 A GB1377566 A GB 1377566A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
areas
multiplying
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1868272A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB1377566A publication Critical patent/GB1377566A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04Electron multipliers
    • H01J43/06Electrode arrangements
    • H01J43/18Electrode arrangements using essentially more than one dynode
    • H01J43/22Dynodes consisting of electron-permeable material, e.g. foil, grid, tube, venetian blind
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04Electron multipliers
    • H01J43/06Electrode arrangements
    • H01J43/10Dynodes

Abstract

1377566 Electron beam apparatus LICENTIA PATENT-VERWALTUNGS GmbH 21 April 1972 [24 April 1971] 18682/72 Heading H1D An electron multiplier comprises a semiconductor 4, Fig. 1, which is mechanically reinforced and divided into discrete regions on its input surface and provided with an emissive coating 6 on its output surface. A disc of semiconductor material such as Zn doped GaAs or Si doped with B with a charge carrier concentration greater than 10<SP>19</SP>/cm<SP>3</SP> may be selectively etched to leave reinforcing areas 5 and to form the blind holes 3 terminating in the electron multiplying areas 4 which should be at least as thick as the penetration depth of the incident electrons but no thicker than the diffusion -length of the generated electrons with thermal energy. The coating 6 may be a few atoms thick of electro-positive metal such as caesium. The surface 4 may be more strongly doped to form a P + layer. In a modification, Fig. 3 (not shown), the surface 5 is covered with insulation, e.g. SiO 2 if the semi-conductor is silicon, which is in turn covered by a conductive layer of aluminium or gold which is maintained at a negative potential relative to the semi-conductor; alternatively the conductive layer may be omitted, the insulating layer then being charged negatively by the incident electrons to create a field which diverts electrons away from areas 5 and towards the multiplying areas 4. In a further modification, Fig. 2 (not shown), the reinforcing grid is of different material from the semi-conductor. A thick semi-conductor plate may be joined to a grid-like carrier plate of nickel or conductive glass by gluing, sintering, soldering, or pressing, and the semi-conductor plate is then reduced to the required thickness by etching. Alternatively a semi-conductor coating is formed by epitaxial deposition on a flat support plate in which apertures are subsequently formed. The support plate may be another semi-conductor with similar crystal structure or a metal such as molybdenum. The multiplier may be used in an image intensifier (Fig. 4, not shown) or in an oscillograph tube (Fig. 5, not shown).
GB1868272A 1971-04-24 1972-04-21 Device for multiplying free electrons Expired GB1377566A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712120235 DE2120235C3 (en) 1971-04-24 1971-04-24 Device for multiplying electrons

Publications (1)

Publication Number Publication Date
GB1377566A true GB1377566A (en) 1974-12-18

Family

ID=5805889

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1868272A Expired GB1377566A (en) 1971-04-24 1972-04-21 Device for multiplying free electrons

Country Status (4)

Country Link
DE (1) DE2120235C3 (en)
FR (1) FR2134459B1 (en)
GB (1) GB1377566A (en)
NL (1) NL7205448A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2117173A (en) * 1982-03-04 1983-10-05 Philips Nv Devices for picking up or displaying images and semiconductor devices for use in such a device
GB2170648A (en) * 1985-02-01 1986-08-06 Raytheon Co Secondary emission cathode
WO2004088702A2 (en) * 2003-03-25 2004-10-14 Itt Manufacturing Enterprises, Inc. Image intensifier and electron multiplier therefor
GB2409927B (en) * 2004-01-09 2006-09-27 Microsaic Systems Ltd Micro-engineered electron multipliers

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2117173A (en) * 1982-03-04 1983-10-05 Philips Nv Devices for picking up or displaying images and semiconductor devices for use in such a device
GB2170648A (en) * 1985-02-01 1986-08-06 Raytheon Co Secondary emission cathode
US4677342A (en) * 1985-02-01 1987-06-30 Raytheon Company Semiconductor secondary emission cathode and tube
GB2170648B (en) * 1985-02-01 1989-07-26 Raytheon Co Crossed-field tube
WO2004088702A2 (en) * 2003-03-25 2004-10-14 Itt Manufacturing Enterprises, Inc. Image intensifier and electron multiplier therefor
WO2004088702A3 (en) * 2003-03-25 2005-03-03 Itt Mfg Enterprises Inc Image intensifier and electron multiplier therefor
GB2409927B (en) * 2004-01-09 2006-09-27 Microsaic Systems Ltd Micro-engineered electron multipliers

Also Published As

Publication number Publication date
DE2120235A1 (en) 1972-11-02
FR2134459A1 (en) 1972-12-08
DE2120235C3 (en) 1979-09-06
DE2120235B2 (en) 1979-01-11
NL7205448A (en) 1972-10-26
FR2134459B1 (en) 1979-01-12

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Legal Events

Date Code Title Description
PS Patent sealed
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee