DE210372C - - Google Patents

Info

Publication number
DE210372C
DE210372C DENDAT210372D DE210372DA DE210372C DE 210372 C DE210372 C DE 210372C DE NDAT210372 D DENDAT210372 D DE NDAT210372D DE 210372D A DE210372D A DE 210372DA DE 210372 C DE210372 C DE 210372C
Authority
DE
Germany
Prior art keywords
cartridge
layer
cover sheets
cardboard
felt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DENDAT210372D
Other languages
German (de)
English (en)
Publication of DE210372C publication Critical patent/DE210372C/de
Active legal-status Critical Current

Links

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F42AMMUNITION; BLASTING
    • F42BEXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
    • F42B5/00Cartridge ammunition, e.g. separately-loaded propellant charges
    • F42B5/38Separately-loaded propellant charges, e.g. cartridge bags

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Paper (AREA)
  • Fats And Perfumes (AREA)
DENDAT210372D Active DE210372C (en:Method)

Publications (1)

Publication Number Publication Date
DE210372C true DE210372C (en:Method)

Family

ID=472269

Family Applications (1)

Application Number Title Priority Date Filing Date
DENDAT210372D Active DE210372C (en:Method)

Country Status (1)

Country Link
DE (1) DE210372C (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990467A (en) * 1988-08-11 1991-02-05 Samsung Electronics Co., Ltd. Method of preventing residue on an insulator layer in the fabrication of a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990467A (en) * 1988-08-11 1991-02-05 Samsung Electronics Co., Ltd. Method of preventing residue on an insulator layer in the fabrication of a semiconductor device

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