DE2030065A1 - Verfahren und Vorrichtung zur Steuerung einer optischen Umwandlung - Google Patents

Verfahren und Vorrichtung zur Steuerung einer optischen Umwandlung

Info

Publication number
DE2030065A1
DE2030065A1 DE19702030065 DE2030065A DE2030065A1 DE 2030065 A1 DE2030065 A1 DE 2030065A1 DE 19702030065 DE19702030065 DE 19702030065 DE 2030065 A DE2030065 A DE 2030065A DE 2030065 A1 DE2030065 A1 DE 2030065A1
Authority
DE
Germany
Prior art keywords
barrier layer
level
semiconductor body
change
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19702030065
Other languages
German (de)
English (en)
Other versions
DE2030065C2 (enExample
Inventor
Junichi Sendai Miyagi Nishizawa (Japan). P
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Publication of DE2030065A1 publication Critical patent/DE2030065A1/de
Application granted granted Critical
Publication of DE2030065C2 publication Critical patent/DE2030065C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Led Devices (AREA)
DE19702030065 1969-06-18 1970-06-18 Verfahren und Vorrichtung zur Steuerung einer optischen Umwandlung Granted DE2030065A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4811969 1969-06-18

Publications (2)

Publication Number Publication Date
DE2030065A1 true DE2030065A1 (de) 1971-05-13
DE2030065C2 DE2030065C2 (enExample) 1987-12-10

Family

ID=12794423

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702030065 Granted DE2030065A1 (de) 1969-06-18 1970-06-18 Verfahren und Vorrichtung zur Steuerung einer optischen Umwandlung

Country Status (3)

Country Link
DE (1) DE2030065A1 (enExample)
FR (1) FR2046865B1 (enExample)
GB (1) GB1307877A (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1220049B (de) * 1958-12-08 1966-06-30 Litton Systems Inc Verfahren zur Feststellung und Messung von Licht mit einem Korngrenzenphotoelement und Anordnung zur Durchfuehrung des Verfahrens
DE1260042B (de) * 1964-10-15 1968-02-01 Philips Nv Vorrichtung zum Nachweis elektro-magnetischer Strahlung und Verfahren zu ihrem Betrieb
US3415996A (en) * 1965-02-15 1968-12-10 Philips Corp Photosensitive semiconductor with two radiation sources for producing two transition steps
US3417248A (en) * 1962-03-27 1968-12-17 Gen Electric Tunneling semiconductor device exhibiting storage characteristics

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1220049B (de) * 1958-12-08 1966-06-30 Litton Systems Inc Verfahren zur Feststellung und Messung von Licht mit einem Korngrenzenphotoelement und Anordnung zur Durchfuehrung des Verfahrens
US3417248A (en) * 1962-03-27 1968-12-17 Gen Electric Tunneling semiconductor device exhibiting storage characteristics
DE1260042B (de) * 1964-10-15 1968-02-01 Philips Nv Vorrichtung zum Nachweis elektro-magnetischer Strahlung und Verfahren zu ihrem Betrieb
US3415996A (en) * 1965-02-15 1968-12-10 Philips Corp Photosensitive semiconductor with two radiation sources for producing two transition steps

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-Buch: R.H.Bube, Photoconductivity of Solids, New York 1960, S. 149 und 154 *

Also Published As

Publication number Publication date
FR2046865B1 (enExample) 1973-01-12
DE2030065C2 (enExample) 1987-12-10
FR2046865A1 (enExample) 1971-03-12
GB1307877A (en) 1973-02-21

Similar Documents

Publication Publication Date Title
DE2429705C3 (de) Schottky-Diode und Verfahren zu ihrer Herstellung
DE3629402C2 (de) Verfahren und Vorrichtung zur schnellen Fotodetektierung mit Hilfe eines Supergitters
DE1439921B2 (de) Verstärkendes Halbleiterbauelement
DE1024640B (de) Verfahren zur Herstellung von Kristalloden
DE3137389C2 (enExample)
DE1806624B2 (enExample)
DE112014000624T5 (de) Fotodioden-Anordnung mit einer ladungsabsorbierenden dotierten Zone
DE3222848C2 (enExample)
DE2328194B2 (de) Fotoelektrische halbleitervorrichtung und verfahren zu ihrer herstellung
DE1191040B (de) Optischer Sender oder Verstaerker mit Halbleiterdiode, die einen in Flussrichtung belasteten PN-UEbergang zur Injektion von Ladungstraegern aufweist
DE69935947T2 (de) Quantumwell-Detektor mit Speicheranordnung für photoangeregte Elektronen
DE2030065A1 (de) Verfahren und Vorrichtung zur Steuerung einer optischen Umwandlung
DE112005003382T5 (de) Fotodiode mit einem Heteroübergang zwischen halbisolierendem Zinkoxid-Halbleiter-Dünnfilm und Silizium
DE102017223597A1 (de) Verfahren zum fertigen einer halbleitervorrichtung
DE1295613B (de) Halbleiter-Speicherelektrodenanordnung mit einer Halbleiterschicht und Fernseh-Aufnahmeroehre mit einer solchen Speicherelektrode
DE3434552C2 (enExample)
DE2009359A1 (de) Anordnung zum Eindiffundieren von Dotierstoffen in ein Halbleitermaterial
DE2311469C2 (de) Lichtmodulationseinrichtung mit Schottky-Kontakt
DE1231353B (de) Elektrolumineszente Halbleiterdiode und Verfahren zu ihrer Herstellung
DE2012945B2 (de) Halbleiterbauelement
DE2019162C (de) Zinksulfidelement
DE2512327A1 (de) Fotoelektrisches bauelement mit pn-uebergang
DE2629245C2 (de) Strahlungsempfindliches Halbleiterbauelement
AT206937B (de) Halbleitervorrichtung und Verfahren zu deren Herstellung
DE2208324A1 (de) Halbleiteranordnung

Legal Events

Date Code Title Description
D2 Grant after examination
8364 No opposition during term of opposition