DE2005562A1 - - Google Patents
Info
- Publication number
- DE2005562A1 DE2005562A1 DE19702005562 DE2005562A DE2005562A1 DE 2005562 A1 DE2005562 A1 DE 2005562A1 DE 19702005562 DE19702005562 DE 19702005562 DE 2005562 A DE2005562 A DE 2005562A DE 2005562 A1 DE2005562 A1 DE 2005562A1
- Authority
- DE
- Germany
- Prior art keywords
- areas
- auxiliary
- semiconductor
- semiconductor layer
- collecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 111
- 239000000969 carrier Substances 0.000 claims description 53
- 238000009792 diffusion process Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 27
- 230000005855 radiation Effects 0.000 claims description 21
- 238000002955 isolation Methods 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 230000005012 migration Effects 0.000 claims description 14
- 238000013508 migration Methods 0.000 claims description 14
- 230000001960 triggered effect Effects 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 3
- 230000035515 penetration Effects 0.000 claims description 3
- 239000012141 concentrate Substances 0.000 claims 1
- 230000002441 reversible effect Effects 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 10
- 238000009413 insulation Methods 0.000 description 9
- 238000001465 metallisation Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 239000003574 free electron Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 235000014277 Clidemia hirta Nutrition 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000069219 Henriettea Species 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/197—Bipolar transistor image sensors
Landscapes
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79720269A | 1969-02-06 | 1969-02-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2005562A1 true DE2005562A1 (enrdf_load_stackoverflow) | 1970-12-23 |
Family
ID=25170192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19702005562 Pending DE2005562A1 (enrdf_load_stackoverflow) | 1969-02-06 | 1970-02-06 |
Country Status (6)
Country | Link |
---|---|
BE (1) | BE745466A (enrdf_load_stackoverflow) |
CH (1) | CH513519A (enrdf_load_stackoverflow) |
DE (1) | DE2005562A1 (enrdf_load_stackoverflow) |
FR (1) | FR2033992A5 (enrdf_load_stackoverflow) |
NL (1) | NL7001586A (enrdf_load_stackoverflow) |
SE (1) | SE343721B (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2713320A1 (de) * | 1977-03-25 | 1978-09-28 | Duerr Dental Kg | Vorrichtung in zahnaerztlichen sauganlagen zum anschliessen und halten von saugduesenschlaeuchen und/oder zum filtern |
DE102013225666A1 (de) | 2013-12-11 | 2015-06-11 | Volkswagen Aktiengesellschaft | Verfahren zur Herstellung einer Welle-Nabe-Fügeverbindung und Welle-Nabe-Fügeverbindung oder Nockenwelle |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3810796A (en) * | 1972-08-31 | 1974-05-14 | Texas Instruments Inc | Method of forming dielectrically isolated silicon diode array vidicon target |
JPS5318383B2 (enrdf_load_stackoverflow) * | 1974-10-07 | 1978-06-14 |
-
1970
- 1970-02-02 CH CH141770A patent/CH513519A/fr not_active IP Right Cessation
- 1970-02-04 BE BE745466D patent/BE745466A/xx unknown
- 1970-02-04 NL NL7001586A patent/NL7001586A/xx unknown
- 1970-02-05 FR FR7004115A patent/FR2033992A5/fr not_active Expired
- 1970-02-05 SE SE1450/70A patent/SE343721B/xx unknown
- 1970-02-06 DE DE19702005562 patent/DE2005562A1/de active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2713320A1 (de) * | 1977-03-25 | 1978-09-28 | Duerr Dental Kg | Vorrichtung in zahnaerztlichen sauganlagen zum anschliessen und halten von saugduesenschlaeuchen und/oder zum filtern |
DE102013225666A1 (de) | 2013-12-11 | 2015-06-11 | Volkswagen Aktiengesellschaft | Verfahren zur Herstellung einer Welle-Nabe-Fügeverbindung und Welle-Nabe-Fügeverbindung oder Nockenwelle |
Also Published As
Publication number | Publication date |
---|---|
NL7001586A (enrdf_load_stackoverflow) | 1970-08-10 |
BE745466A (fr) | 1970-08-04 |
CH513519A (fr) | 1971-09-30 |
FR2033992A5 (enrdf_load_stackoverflow) | 1970-12-04 |
SE343721B (enrdf_load_stackoverflow) | 1972-03-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69321822T2 (de) | Photodiodenstruktur | |
DE2735651C2 (enrdf_load_stackoverflow) | ||
DE2611338C3 (de) | Feldeffekttransistor mit sehr kurzer Kanallange | |
DE2802987A1 (de) | Festkoerper-abbildungsvorrichtung | |
DE3446972C2 (enrdf_load_stackoverflow) | ||
DE3784191T2 (de) | Halbleiterphotodetektor mit schottky-uebergang. | |
DE2553203A1 (de) | Festkoerper-bildabtaster mit zerstoerungsfreiem, wahlfreiem zugriff | |
DE2347271A1 (de) | Strahlungsempfindliche halbleiteranordnung | |
DE1932516A1 (de) | Bildwandlereinrichtung | |
DE2342637A1 (de) | Zenerdiode mit drei elektrischen anschlussbereichen | |
DE1764565C3 (de) | Strahlungsempfindliches Halbleiterbauelement | |
DE1959889A1 (de) | Mit Ladungsspeicherung arbeitende Einrichtung | |
DE2002134A1 (de) | Optisch auslesbarer Informationsspeicher | |
WO2001022494A1 (de) | Vertikale pixelzellen | |
DE3345189A1 (de) | Festkoerper-bildaufnahmewandler | |
DE69032994T2 (de) | Photoelektrischer Umwandler | |
DE2832154A1 (de) | Halbleitervorrichtung mit isoliertem gate | |
DE2456131A1 (de) | Fotosensible vorrichtung | |
DE69732520T2 (de) | Ladungsgekoppelte anordnung und verfahren zur herstellung | |
DE2922301A1 (de) | Lichtsteuerbarer thyristor | |
DE2345686A1 (de) | Bildwiedergabe- und/oder -umwandlungsvorrichtung | |
DE2005562A1 (enrdf_load_stackoverflow) | ||
DE3010986A1 (de) | Integrierte halbleiterschaltung | |
DE2521435C2 (de) | Raumladungsbegrenzte Phototransistoranordnung | |
EP0002752B1 (de) | Photodiodenanordnung |