DE20007730U1 - Vorrichtung mit lichtemittierenden Dioden - Google Patents

Vorrichtung mit lichtemittierenden Dioden

Info

Publication number
DE20007730U1
DE20007730U1 DE20007730U DE20007730U DE20007730U1 DE 20007730 U1 DE20007730 U1 DE 20007730U1 DE 20007730 U DE20007730 U DE 20007730U DE 20007730 U DE20007730 U DE 20007730U DE 20007730 U1 DE20007730 U1 DE 20007730U1
Authority
DE
Germany
Prior art keywords
heat
light
dissipating substrate
emitting diode
lighting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE20007730U
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lite On Technology Corp
Original Assignee
Lite On Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB0009879A priority Critical patent/GB2361581A/en
Priority to FR0005391A priority patent/FR2808408B3/fr
Application filed by Lite On Electronics Inc filed Critical Lite On Electronics Inc
Priority to DE20007730U priority patent/DE20007730U1/de
Publication of DE20007730U1 publication Critical patent/DE20007730U1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • F21Y2105/12—Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the geometrical disposition of the light-generating elements, e.g. arranging light-generating elements in differing patterns or densities
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2113/00—Combination of light sources
    • F21Y2113/10—Combination of light sources of different colours
    • F21Y2113/13—Combination of light sources of different colours comprising an assembly of point-like light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

Description

Der Beschreibungstext wurde nicht elektronisch erfaßt
Der Beschreibungstext wurde nicht elektronisch erfaßt
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Der Beschreibungstext wurde nicht elektronisch erfaßt
Der Beschreibungstext wurde nicht elektronisch erfaßt
Der Beschreibungstext wurde nicht elektronisch erfaßt
Der Beschreibungstext wurde nicht elektronisch erfaßt
Der Beschreibungstext wurde nicht elektronisch erfaßt
Der Beschreibungstext wurde nicht elektronisch erfaßt
Der Beschreibungstext wurde nicht elektronisch erfaßt
Der Beschreibungstext wurde nicht elektronisch erfaßt

Claims (17)

1. Vorrichtung mit lichtemittierender Diode, aufweisend:
mindestens ein wärmeableitendes Substrat (11), das an dem Boden der Vorrichtung angeordnet ist und ein Metall oder eine Legierung enthält,
mindestens einen Beleuchtungsabschnitt (17), der an einer Oberfläche des wärmeableitenden Substrats (11) angeordnet ist und aufweist:
eine in dem wärmeableitenden Substrat (11) angeordnete Vertiefung (112),
eine über dem wärmeableitenden Substrat (11) angeordnete Leiterplatte (13),
mindestens einen in der Vertiefung (112) angeordneten lichtemittierenden Diodenchip (12), der unmittelbar an dem wärmeableitenden Substrat (11) oder an einer zwischen dem lichtemittierenden Diodenchip (12) und dem wärmeableitenden Substrat (11) angeordneten Unterlage (115) angebracht ist, und
mindestens einen leitfähigen Draht (132), der jeden lichtemittierenden Diodenchip (12) mit der Leiterplatte (13) koppelt.
2. Vorrichtung nach Anspruch 1, bei der der Beleuchtungsabschnitt (17) mindestens eine chipschützende Schicht (14) für den lichtemittierenden Diodenchip (12) aufweist.
3. Vorrichtung nach Anspruch 2, bei der der Beleuchtungsabschnitt (17) mindestens eine über der chipschützenden Schicht (14) angeordneten Linsenschicht (15) zum Einstellen des Strahlwinkels des von dem Diodenchip (12) ausgestrahlten Lichtes aufweist.
4. Vorrichtung nach einem der Ansprüche 1 bis 3, bei der die Unterseite des wärmeableitenden Substrats (11) unmittelbar zum Bilden einer auf der Unterseite des wärmeableitenden Substrats (11) angeordneten Kühleinrichtung bearbeitet ist oder nachträglich mit einer Kühleinrichtung bestückt ist.
5. Vorrichtung nach Anspruch 3, bei der die Linsenschicht (15) mittels mindestens eines Positionierungsstücks auf dem wärmeableitenden Substrat (11) positioniert ist.
6. Vorrichtung nach einem der Ansprüche 1 bis 5, bei der der lichtemittierende Diodenchip (12) eine Mehrzahl von lichtemittierenden Diodenchips aufweist, die Lichtstrahlen in mindestens zwei unterschiedlichen Farben ausstrahlen können.
7. Vorrichtung nach einem der Ansprüche 1 bis 5, bei der der Beleuchtungsabschnitt (17) eine Mehrzahl von Beleuchtungsabschnitten aufweist, die Lichtstrahlen in mindestens zwei unterschiedlichen Farben ausstrahlen.
8. Vorrichtung nach einem der Ansprüche 1 bis 7, bei der der Beleuchtungsabschnitt auf einer ebenen Fläche des wärmeableitenden Substrats (11) angeordnet ist.
9. Vorrichtung nach einem der Ansprüche 1 bis 8, bei der der Beleuchtungsabschnitt (17) auf einer gekrümmten Fläche des wärmeableitenden Substrats (11) angeordnet ist.
10. Vorrichtung nach einem der Ansprüche 1 bis 9, bei der das wärmeableitende Substrat (11) länglich ausgebildet ist.
11. Vorrichtung nach einem der Ansprüche 1 bis 10, bei der das wärmeableitende Substrat (11) einen gebogenen Abschnitt aufweist.
12. Vorrichtung nach einem der Ansprüche 1 bis 11, bei der der Beleuchtungsabschnitt (17) eine Mehrzahl von Beleuchtungsabschnitten aufweist, die auf einer Mehrzahl von wärmeableitenden Substraten (11) angeordnet sind.
13. Vorrichtung nach Anspruch 12, bei der die Mehrzahl von wärmeableitenden Substraten (11) unter der gleichen Leiterplatte (13) angeordnet ist.
14. Vorrichtung nach einem der Ansprüche 1 bis 13, bei der der lichtemittierende Diodenchip (12) eine Mehrzahl von lichtemittierenden Diodenchips zum Ausstrahlen von blauem Licht oder UV-Licht aufweist, und der Beleuchtungsabschnitt (17) ein fluoreszierendes Reagenz enthält, um weißes Licht auszustrahlen.
15. Vorrichtung nach einem der Ansprüche 1 bis 14, bei der der Beleuchtungsabschnitt (17) mindestens einen Lichtschirm (20) aufweist.
16. Vorrichtung nach Anspruch 15, bei der jeder Beleuchtungsabschnitt (17) eine Mehrzahl von lichtemittierenden Diodenchips (12) aufweist, die Lichtstrahlen in mindestens zwei Farben ausstrahlen.
17. Vorrichtung nach Anspruch 15 oder 16, bei der der Beleuchtungsabschnitt (17) eine Mehrzahl von Beleuchtungsabschnitten aufweist, die Lichtstrahlen in mindestens zwei Farben ausstrahlen.
DE20007730U 2000-04-20 2000-04-28 Vorrichtung mit lichtemittierenden Dioden Expired - Lifetime DE20007730U1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB0009879A GB2361581A (en) 2000-04-20 2000-04-20 A light emitting diode device
FR0005391A FR2808408B3 (fr) 2000-04-20 2000-04-27 Dispositif a diode electroluminescente
DE20007730U DE20007730U1 (de) 2000-04-20 2000-04-28 Vorrichtung mit lichtemittierenden Dioden

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0009879A GB2361581A (en) 2000-04-20 2000-04-20 A light emitting diode device
FR0005391A FR2808408B3 (fr) 2000-04-20 2000-04-27 Dispositif a diode electroluminescente
DE20007730U DE20007730U1 (de) 2000-04-20 2000-04-28 Vorrichtung mit lichtemittierenden Dioden

Publications (1)

Publication Number Publication Date
DE20007730U1 true DE20007730U1 (de) 2000-08-03

Family

ID=27219451

Family Applications (1)

Application Number Title Priority Date Filing Date
DE20007730U Expired - Lifetime DE20007730U1 (de) 2000-04-20 2000-04-28 Vorrichtung mit lichtemittierenden Dioden

Country Status (3)

Country Link
DE (1) DE20007730U1 (de)
FR (1) FR2808408B3 (de)
GB (1) GB2361581A (de)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002015288A1 (en) * 2000-08-17 2002-02-21 Power Signal Technologies, Inc. Solid state light with solar shielded heatsink
EP1217664A2 (de) * 2000-12-21 2002-06-26 Goodrich Hella Aerospace Lighting Systems GmbH Halbleiter-Leuchteinheit und Verfahren zur Herstellung derselben
EP1467414A1 (de) * 2001-12-29 2004-10-13 Hangzhou Fuyang Xinying Dianzi Ltd. Led und led-lampe
WO2006076899A2 (de) * 2005-01-19 2006-07-27 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung
DE102005057447A1 (de) * 2005-03-08 2006-09-14 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LED-Befestigung mit erhöhter Wärmedissipation
EP1843079A2 (de) * 2006-04-03 2007-10-10 Firma Ivoclar Vivadent AG Halbleiter-Strahlungsquelle sowie Lichthärtgerät
US7320632B2 (en) 2000-06-15 2008-01-22 Lednium Pty Limited Method of producing a lamp
DE102006036544A1 (de) * 2006-08-04 2008-02-07 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Optoelektronisches Modul
US7352127B2 (en) 2000-06-15 2008-04-01 Lednium Pty Limited LED lamp with light-emitting junction arranged in three-dimensional array
US7704762B2 (en) 2002-06-14 2010-04-27 Lednium Technology Pty Limited Lamp and method of producing a lamp
US7918574B2 (en) 2005-12-16 2011-04-05 Osram Opto Semiconductors Gmbh Illumination device
US8042964B2 (en) 2002-09-30 2011-10-25 Siemens Aktiengesellschaft Illumination device having luminous spots formed by light emitting diodes

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GB0203588D0 (en) * 2002-02-14 2002-04-03 Enfis Ltd A light system
DK1568254T3 (da) 2002-11-19 2008-06-23 Dan Friis Lyssystem eller lyskilde baseret på lysdioder
JP2004342870A (ja) * 2003-05-16 2004-12-02 Stanley Electric Co Ltd 大電流駆動用発光ダイオード
FR2862424B1 (fr) * 2003-11-18 2006-10-20 Valeo Electronique Sys Liaison Dispositif de refroidissement d'un composant electrique et procede de fabrication de ce dispositif
US20060083017A1 (en) * 2004-10-18 2006-04-20 Bwt Propety, Inc. Solid-state lighting apparatus for navigational aids
US20060097385A1 (en) * 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
CN100405621C (zh) * 2005-09-29 2008-07-23 上海乐金广电电子有限公司 白色光源的制造方法
KR100888228B1 (ko) * 2007-06-22 2009-03-12 (주)웨이브닉스이에스피 금속베이스 광소자 패키지 모듈 및 그 제조방법

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Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7320632B2 (en) 2000-06-15 2008-01-22 Lednium Pty Limited Method of producing a lamp
US7352127B2 (en) 2000-06-15 2008-04-01 Lednium Pty Limited LED lamp with light-emitting junction arranged in three-dimensional array
WO2002015288A1 (en) * 2000-08-17 2002-02-21 Power Signal Technologies, Inc. Solid state light with solar shielded heatsink
EP1217664A2 (de) * 2000-12-21 2002-06-26 Goodrich Hella Aerospace Lighting Systems GmbH Halbleiter-Leuchteinheit und Verfahren zur Herstellung derselben
EP1217664A3 (de) * 2000-12-21 2007-03-14 Goodrich Lighting Systems GmbH Halbleiter-Leuchteinheit und Verfahren zur Herstellung derselben
EP1467414A1 (de) * 2001-12-29 2004-10-13 Hangzhou Fuyang Xinying Dianzi Ltd. Led und led-lampe
EP1467414A4 (de) * 2001-12-29 2007-07-11 Hangzhou Fuyang Xinying Dianzi Led und led-lampe
US7704762B2 (en) 2002-06-14 2010-04-27 Lednium Technology Pty Limited Lamp and method of producing a lamp
US8042964B2 (en) 2002-09-30 2011-10-25 Siemens Aktiengesellschaft Illumination device having luminous spots formed by light emitting diodes
WO2006076899A3 (de) * 2005-01-19 2007-03-08 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung
US7878681B2 (en) 2005-01-19 2011-02-01 Osram Opto Semiconductor Gmbh Illumination device
WO2006076899A2 (de) * 2005-01-19 2006-07-27 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung
DE102005057447A1 (de) * 2005-03-08 2006-09-14 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LED-Befestigung mit erhöhter Wärmedissipation
US7918574B2 (en) 2005-12-16 2011-04-05 Osram Opto Semiconductors Gmbh Illumination device
DE102006015377A1 (de) * 2006-04-03 2007-10-11 Ivoclar Vivadent Ag Halbleiter-Strahlungsquelle sowie Lichthärtgerät
EP1843079A2 (de) * 2006-04-03 2007-10-10 Firma Ivoclar Vivadent AG Halbleiter-Strahlungsquelle sowie Lichthärtgerät
EP1843079A3 (de) * 2006-04-03 2008-07-09 Firma Ivoclar Vivadent AG Halbleiter-Strahlungsquelle sowie Lichthärtgerät
DE102006015377B4 (de) 2006-04-03 2018-06-14 Ivoclar Vivadent Ag Halbleiter-Strahlungsquelle sowie Lichthärtgerät
DE102006036544A1 (de) * 2006-08-04 2008-02-07 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Optoelektronisches Modul
US7789573B2 (en) 2006-08-04 2010-09-07 Osram Gesellschaft Mit Beschrankter Haftung Optoelectronic module

Also Published As

Publication number Publication date
FR2808408A3 (fr) 2001-11-02
GB0009879D0 (en) 2000-06-07
FR2808408B3 (fr) 2002-04-12
GB2361581A (en) 2001-10-24

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