DE1947637C3 - Schaltungsanordnung zur Erzeugung von Hochfrequenzschwingungen - Google Patents

Schaltungsanordnung zur Erzeugung von Hochfrequenzschwingungen

Info

Publication number
DE1947637C3
DE1947637C3 DE19691947637 DE1947637A DE1947637C3 DE 1947637 C3 DE1947637 C3 DE 1947637C3 DE 19691947637 DE19691947637 DE 19691947637 DE 1947637 A DE1947637 A DE 1947637A DE 1947637 C3 DE1947637 C3 DE 1947637C3
Authority
DE
Germany
Prior art keywords
circuit arrangement
junctions
zone
semiconductor
vibrations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19691947637
Other languages
German (de)
English (en)
Other versions
DE1947637B2 (de
DE1947637A1 (de
Inventor
Kuniyasu Kawarada
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE1947637A1 publication Critical patent/DE1947637A1/de
Publication of DE1947637B2 publication Critical patent/DE1947637B2/de
Application granted granted Critical
Publication of DE1947637C3 publication Critical patent/DE1947637C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19691947637 1968-09-21 1969-09-19 Schaltungsanordnung zur Erzeugung von Hochfrequenzschwingungen Expired DE1947637C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6812368 1968-09-21

Publications (3)

Publication Number Publication Date
DE1947637A1 DE1947637A1 (de) 1970-03-26
DE1947637B2 DE1947637B2 (de) 1972-12-07
DE1947637C3 true DE1947637C3 (de) 1973-06-28

Family

ID=13364637

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691947637 Expired DE1947637C3 (de) 1968-09-21 1969-09-19 Schaltungsanordnung zur Erzeugung von Hochfrequenzschwingungen

Country Status (5)

Country Link
US (1) US3638082A (https=)
DE (1) DE1947637C3 (https=)
FR (1) FR2018605B1 (https=)
GB (1) GB1288237A (https=)
NL (1) NL6914252A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8450835B2 (en) * 2008-04-29 2013-05-28 Sandisk 3D Llc Reverse leakage reduction and vertical height shrinking of diode with halo doping

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2899646A (en) * 1959-08-11 Tread
US2895109A (en) * 1955-06-20 1959-07-14 Bell Telephone Labor Inc Negative resistance semiconductive element
US2967793A (en) * 1959-02-24 1961-01-10 Westinghouse Electric Corp Semiconductor devices with bi-polar injection characteristics
US3158754A (en) * 1961-10-05 1964-11-24 Ibm Double injection semiconductor device
US3229104A (en) * 1962-12-24 1966-01-11 Ibm Four terminal electro-optical semiconductor device using light coupling
US3284639A (en) * 1963-02-19 1966-11-08 Westinghouse Electric Corp Semiconductor switch device of controlled rectifier type responsive to approximately equal gate signals of either polarity
US3246172A (en) * 1963-03-26 1966-04-12 Richard J Sanford Four-layer semiconductor switch with means to provide recombination centers
FR1519634A (fr) * 1965-12-30 1968-04-05 Siemens Ag Diode à avalanche pour la production d'oscillations
US3426295A (en) * 1966-05-16 1969-02-04 Bell Telephone Labor Inc Negative resistance microwave device
US3356866A (en) * 1966-08-17 1967-12-05 Bell Telephone Labor Inc Apparatus employing avalanche transit time diode
US3566206A (en) * 1968-12-20 1971-02-23 Bell Telephone Labor Inc Negative resistance semiconductor device having a pinipin zone structure

Also Published As

Publication number Publication date
FR2018605B1 (https=) 1973-10-19
FR2018605A1 (https=) 1970-05-29
GB1288237A (https=) 1972-09-06
US3638082A (en) 1972-01-25
DE1947637B2 (de) 1972-12-07
NL6914252A (https=) 1970-03-24
DE1947637A1 (de) 1970-03-26

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Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
8339 Ceased/non-payment of the annual fee