DE1934326A1 - Multi-beam ion atomization system for the production of thin, uniform or alloyed layers - Google Patents

Multi-beam ion atomization system for the production of thin, uniform or alloyed layers

Info

Publication number
DE1934326A1
DE1934326A1 DE19691934326 DE1934326A DE1934326A1 DE 1934326 A1 DE1934326 A1 DE 1934326A1 DE 19691934326 DE19691934326 DE 19691934326 DE 1934326 A DE1934326 A DE 1934326A DE 1934326 A1 DE1934326 A1 DE 1934326A1
Authority
DE
Germany
Prior art keywords
electrode
suction
uniform
adjusted
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691934326
Other languages
German (de)
Inventor
Reisse Dipl-Phys Guenter
Fiedler Dr Rer Nat Otto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INST ELEKTRONISCHE BAUELEMENTE
Original Assignee
INST ELEKTRONISCHE BAUELEMENTE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INST ELEKTRONISCHE BAUELEMENTE filed Critical INST ELEKTRONISCHE BAUELEMENTE
Publication of DE1934326A1 publication Critical patent/DE1934326A1/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B31/00—Chucks; Expansion mandrels; Adaptations thereof for remote control
    • B23B31/02—Chucks
    • B23B31/10—Chucks characterised by the retaining or gripping devices or their immediate operating means
    • B23B31/12—Chucks with simultaneously-acting jaws, whether or not also individually adjustable
    • B23B31/16—Chucks with simultaneously-acting jaws, whether or not also individually adjustable moving radially
    • B23B31/16158—Jaws movement actuated by coaxial conical surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B31/00—Chucks; Expansion mandrels; Adaptations thereof for remote control
    • B23B31/02—Chucks
    • B23B31/10—Chucks characterised by the retaining or gripping devices or their immediate operating means
    • B23B31/12—Chucks with simultaneously-acting jaws, whether or not also individually adjustable
    • B23B31/16—Chucks with simultaneously-acting jaws, whether or not also individually adjustable moving radially
    • B23B31/16233—Jaws movement actuated by oblique surfaces of a coaxial control rod
    • B23B31/16254—Jaws movement actuated by oblique surfaces of a coaxial control rod using fluid-pressure means to actuate the gripping means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B31/00—Chucks; Expansion mandrels; Adaptations thereof for remote control
    • B23B31/02—Chucks
    • B23B31/10—Chucks characterised by the retaining or gripping devices or their immediate operating means
    • B23B31/12—Chucks with simultaneously-acting jaws, whether or not also individually adjustable
    • B23B31/20—Longitudinally-split sleeves, e.g. collet chucks
    • B23B31/201—Characterized by features relating primarily to remote control of the gripping means
    • B23B31/204—Characterized by features relating primarily to remote control of the gripping means using fluid-pressure means to actuate the gripping means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B31/00—Chucks; Expansion mandrels; Adaptations thereof for remote control
    • B23B31/02—Chucks
    • B23B31/24—Chucks characterised by features relating primarily to remote control of the gripping means
    • B23B31/28—Chucks characterised by features relating primarily to remote control of the gripping means using electric or magnetic means in the chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B2270/00—Details of turning, boring or drilling machines, processes or tools not otherwise provided for
    • B23B2270/38—Using magnetic fields

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Gripping On Spindles (AREA)

Description

ORIGINAL INSPECTEDORIGINAL INSPECTED

mm/it a·mm / it a

„Ο 193Α32« "Ο 193Α32"

Aufstellung der verwendeten BezugszeichenList of the reference symbols used

11 GlasrezipientGlass recipient 22 Anschluß ζar PumpeConnection ζar pump 33 AnschlußflanschConnecting flange 44th Entlad uiigssy st emUnload uiigssy st em 55 Substrat- unvl MaskenhalterSubstrate and mask holder 66th TargetTarget 77th IonenstrahlenIon beams 88th abgestaubtes Materialdusted material 99 SubstrateSubstrates 1010 IonisationsräumeIonization rooms 1111th KatodeCathode 1212th Anodeanode 1313th GegenkatodeCounter cathode 1414th DoppelzylinderDouble cylinder 1515th MagnetspuleSolenoid 1616 jSiseniaanteljSiseniaantel 1717th IsolierzylinderInsulating cylinder 1818th SteuerelektrodeControl electrode 1§1§ AbsaogelektrodeSuction electrode 2020th SchutielektrodfSchutielectrodf 2121 DistaiizringeDistaiizrings 2222nd . - Eineät*· " ■ ■ ■ .,■■;■; '■■. - Eineät * · "■ ■ ■., ■■; ■; '■■ 2323 HochspennungadurchrihroiigHigh voltage through-hole 2424 Flanschflange 2525th AbschluBplatteEnd plate 2626th w'aaeerzulaufw'aaeerzulauf 2727 WasserablaufDrainage 2828 KatodenzuflhrungCathode feed 2929 AnodexiZ uf iihrungAnodexization 3030th VitoxibachsenVitoxi axes 3131 GammischeibenGamma disks 3232 GjaeröhrchenGjaeröhrchen 3333 ÄntladaiigÄntladaiig 3434 Strahlenbündel parallelBeams parallel 3535 Strahlenbiindel konvergentBeam bundles convergent 3636 Tergötplatten ;Tergötplatten;

00 98 327 12aS original inspected -: _ ,00 98 327 12aS original inspected - : _,

193Λ32Θ193Λ32Θ

Veröffentlichungen zum Stand, der Technik 1. G, K· WehnerPublications on the state of the art, the technology 1. G, K · Wehner

2. R. Behrisch2. R. Behrisch

3. M. Kaminsky3. M. Kaminsky

4. L. Holland4. L. Holland

5· H. v. Ardenne5 · H. v. Ardenne

6. Pinkelstein6. Pee stone

7. 0. Nielsen7. 0. Nielsen

0. Almen, O. Nielsen Advances Ln Electronics and Electron0. Almen, O. Nielsen Advances Ln Electronics and Electron

Physics Academic Press New York Vol. 7Physics Academic Press New York Vol. 7

(1955) P. Pestkörperzerstäubung durch Ionenbeschuß Ergebnisse der exakten Naturwissenschaften 35 (1964) p, 295(1955) P. Plague body atomization by ion bombardment Results of the exact natural sciences 35 (1964) p, 295

Atomic and Ionic Impact Phenomena onAtomic and Ionic Impact Phenomena on

Metal Surfaces Academic Press New York (1964) p. 142Metal Surfaces Academic Press New York (1964) p. 142

Vacuum Deposition of Thin FilmsVacuum Deposition of Thin Films

Wiley and Sons Kap. 14, New York (1960)Wiley and Sons chap. 14, New York (1960)

Tabellen der Elektronen- und Ionenphysik Akademie-Verlag Berlin (1962)Tables of electron and ion physics Akademie-Verlag Berlin (1962)

Rev. Seient, Instr. (1940) 994 Nucl. Instr. a. Methods 1 (1957) 289Rev. Seient, Instr. (1940) 994 Nucl. Instr. a. Methods 1 (1957) 289

Nucl. Instr. a. Methods 1 (1957) 303Nucl. Instr. a. Methods 1 (1957) 303

Ö. M. H. FrancomeÖ. M. H. Francome

9* J. W. Nickerson, R. Moseon9 * J. W. Nickerson, R. Moseon

10. P. Gaydou10. P. Gaydou

11. F. P. Gaydou Preparation and Properties of Sputtered11. F. P. Gaydou Preparation and Properties of Sputtered

Filme Transactions 10. National Vacuum SymposiumFilms Transactions 10th National Vacuum Symposium

American Vacuum Society (1963)American Vacuum Society (1963)

Application of Low Energy SputteringApplication of Low Energy Sputtering

for Thin Filme Depositionfor Thin Films Deposition

SCP and Solid State TechnologySCP and Solid State Technology

7 (12) 1964, p. Ein Produktionsverfahren zur Herstellung dünner Schichten durch Kathodenzerstäubung im Hochvakuumbereich
Vakuum-Technik Sept. 15· «Tg. (1966) 161-1647 (12) 1964, p. A production process for the production of thin layers by cathode sputtering in a high vacuum range
Vacuum technology Sept. 15 · «Tg. (1966) 161-164

A high Current Vacuum Discharge for Triode-Sputtering in the IQ*** torr Range Vacuum Vol. 17, Nr, 6, p. 3?5 (1%7)A high current vacuum discharge for Triode sputtering in the IQ *** torr range Vacuum Vol. 17, No. 6, p. 3? 5 (1% 7)

0 0 9 8 3 2/12280 0 9 8 3 2/1228

1934 32a1934 32a

12· W. H. Huse Advances in Sputtering Equiment12. W. H. Huse Advances in Sputtering Equiment

TechnologyTechnology

SGP and Solid State Technology 12 (1966) 50SGP and Solid State Technology 12 (1966) 50

13· 0· B. Morgan, G. C. EeHey, E. C. Davis13x0x B. Morgan, G.C. EeHey, E.C. Davis

Technology of Intense DC Ion BeamsTechnology of Intense DC Ion Beams

Rev» Sclent· Instr· VoI, 38, Hr. 4 (1967)'Rev »Sclent · Instr · VoI, 38, Hr. 4 (1967) '

467-480467-480

14. H. V· Pleshivsev, D. V. Karetnlkov, 0. G« Matveenko, V. I· Derbilov, V· V. ftizhegorosdtsev, B. E. Shembel14. H. V. Pleshivsev, D. V. Karetnlkov, 0. G «Matveenko, V. I · Derbilov, V · V. ftizhegorosdtsev, B. E. Shembel

The Production of Intense Ion Beams Using an Magnetized PlasmaThe Production of Intense Ion Beams Using an Magnetized Plasma

15· H. F# Winter, E. Kay15 · H. F # Winter, E. Kay

Gas Incorporation into Sputtered films J. of Appl. Phys. VoX. 38, Nr, 10 (1967) 3928-3934Gas Incorporation into Sputtered Films J. of Appl. Phys. VoX. 38, No. 10 (1967) 3928-3934

* 16. S. P. Wolaky Sputtering Processes and J1IIm Deposition* 16. SP Wolaky Sputtering Processes and J 1 IIm Deposition

SCO? and Solid State Technology 12 (1966)SCO? and Solid State Technology 12 (1966)

17· W. Schnurman Investigation of a Lon Pressure Penning17. W. Schnurman Investigation of a Lon Pressure Penning

Discharge
Physiea 36, 136r160 (1967)Discharge
Physiea 36, 136r160 (1967)

18« P. Gaydou Problemes rencontres dans la preparation18 «P. Gaydou Problemes rencontres dans la preparation

des couches minces par pulverisation cathodique a des pressiohs inferieurea a 10-3 torr
Le Vide TNr. 126 (1968) 454des couches minces par pulverisation cathodique a des pressiohs inferieurea a 10-3 torr
Le Vide part no. 126 (1968) 454

19« K. L. Chopra, M. E. Randlett19 "K. L. Chopra, M. E. Randlett

Duoplasmatron Ion Beam Source for Vacuum Sputtering of Thin !Films
Sev. of Scient. Instr· Vol. 38, Hr. 8 I .-■ (1967) t 1147-1151Duoplasmatron Ion Beam Source for Vacuum Sputtering of Thin! Films
Sev. of Scient. Instr · Vol. 38 , Mr. 8 I .- ■ (1967) t 1147-1151

20. Heisig, Schiller, BeIster, Henneberger20. Heisig, Schiller, BeIster, Henneberger

Eigenschaften mittels Ionenstrahl zerstäubung hergestellter Widerstände Hermsdorf er Technische Mitteilungen H· 16, (1966) S. 484Properties by means of ion beam atomization Manufactured resistors Hermsdorf er Technische Mitteilungen H · 16, (1966) p. 484

21. S. T. C. Tsui Ion Etch Technique and its Applikations21. S. T. C. Tsui Ion Etch Technique and its Applications

SCP and Solid State Technology 12 (1967)SCP and Solid State Technology 12 (1967)

22. E, H. Dudley A Survey of Vacuum Deposition Technology22. E, H. Dudley, A Survey of Vacuum Deposition Technology

SCP and Solid State Technology 12 (1967;SCP and Solid State Technology 12 (1967;

23· P. D. Davidse Theory and Practice of R. F. Sputtering23 P. D. Davidse Theory and Practice of R. F. Sputtering

SCP and Solid State Technology 12 (1966) 30 " .SCP and Solid State Technology 12 (1966) 30 ".

009832/1228009832/1228

19343291934329

24. F· Kloss, L» Hertre Advances in HF Induced Plasma-Sputtering 24. F. Kloss, L. Hertre Advances in HF Induced Plasma Sputtering

SCP and Solid State Technology 12 (1967) 45SCP and Solid State Technology 12 (1967) 45

25· L* Holland, T. Puttner, B. Ν· Jackson25 · L * Holland, T. Puttner, B. Ν · Jackson

A Hadiofrequency DielectricA Hadiofrequency Dielectric

Sputtering System with Ron-GroundedSputtering System with Ron-Grounded

ElectrodesElectrodes

J· of Scientific Instr· (J. ofJ of Scientific Instr (J. of

Phys. E) Vol. 1, Series 2 (19682 p.Phys. E) Vol. 1, Series 2 (19682 p.

26. J. H. Hall Sputtered Microcircuits from Lab26. J. H. Hall Sputtered Microcircuits from Lab

to Productionto Production

SGP and Solid State Technology 12 . (1967) 50SGP and Solid State Technology 12. (1967) 50

27. B. ftavinsek and C. Garter27. B. ftavinsek and C. Garter

An Apparature for the Production and the Ion Bombardment of Thin Films Intern. Journal Electronices 22 (1967) 421An Apparature for the Production and the Ion Bombardment of Thin Films Intern. Journal Electronices 22 (1967) 421

28. M. K· Sinha Sputtering of Metals with Low28. M. K. Sinha Sputtering of Metals with Low

Energy Inert Gas IonsEnergy Inert Gas Ions

Possible Influence of Trapped GasPossible Influence of Trapped Gas

J. Appl· Phys. 39 (1968) 2150-2152J. Appl. Phys. 39, 2150-2152 (1968)

29. G. W· Hamilton, J. L· Hilton, J. S. Luce29. G.W. Hamilton, J.L. Hilton, J.S. Luce

Multimomentum 650 mA Ion Source Plasma Physics 10, 1968, 687-697Multimomentum 650 mA Ion Source Plasma Physics 10, 1968, 687-697

Umfang der Patentrecherche?Scope of the patent search?

DDR EL. 21 g / 21/01DDR EL. 21 g / 21/01

berücksichtigt:considered:

DWP 44819 Einrichtung zur Herstellung dünner Schichten auf einem Träger mittels Ionenstrahlzerstäubung DWP 44819 Device for the production of thin layers on a carrier by means of ion beam sputtering

DWP 52181 Verfahren zur Herstellung dünner Schichten auf einem Träger mittels Ionenstrahlzerstäubung sowie Einrichtung zur Durchführung des VerfahrensDWP 52181 Method of Manufacture thin layers on a carrier by means of ion beam sputtering and equipment to carry out the procedure

Kl, 21 g /Kl, 21 g /

DAS 962 283DAS 962 283

Ionenquelle mit ExtraktionseondeIon source with extraction probe

DAS 1208 420THE 1208 420

Erzeugung eines Strahlenbündels von Ionen bei Hintereinanderschaltung von IonenquellenGeneration of a beam of ions when connected in series of ion sources

609832/1228609832/1228

Claims (5)

. 193A32Q. 193A32Q Patentansprüche:Patent claims: Mehrstrahl-ionenzerstaubungssystem zur Herstellung dünner einheitlicher oder legierter Schichten, bestehend aua einem kompakten Entla'dungssystem zur Zerstäubung in einer Vakuumapparatur wahlweise nach der Plasma- bzw. Ionen-Gtrahlmethode mit einer Elektrodenanordnung, vorzugsweise vom Fiiikelstein-Typ, und einem siebförmigen Absaugsystein, das als separat justierbare Einheit aus Gegenkatode, Absaug- und Sehutzelektrode zusammengesetzt ist, dadurch gekennzeichnet, daß ein oder mehrere Eritladungssysteme (4) mit je mehreren in einer Einfassung, vorzugsweise einem Doppelzünder (14) neben einander angeord- ψ neten Ionisatipnsräumen (10) und sich anschließenden nebeneinander angeordneten Emissions-Slektrodensystemen in der Vakuumspparatur (1) eingesetzt sind.Multi-beam ion sputtering system for the production of thin uniform or alloyed layers, consisting of a compact discharge system for sputtering in a vacuum apparatus, optionally according to the plasma or ion beam method with an electrode arrangement, preferably of the filament stone type, and a sieve-shaped suction system, which is used as is composed separately adjustable unit Gegenkatode, suction and Sehutzelektrode, characterized in that one or more Eritladungssysteme (4) each with a plurality of in an enclosure, preferably a double igniter (14) adjacent angeord- ψ Neten Ionisatipnsräumen (10) and subsequent Emission electrode systems arranged next to one another are used in the vacuum chamber (1). 2. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß in einem intladungssystem (4) mit EIektrodenanordnungen vom Fiiiielstfcin-Typ vorzugsweise eix.e geteilte Magnet- ■ spule (15) mit getrennten btromzufiihrungen angeordnet ist,2. Device according to claim 1, characterized in that in an internal charging system (4) with electrical electrode arrangements of the filament type, preferably one split magnet coil (15) is arranged with separate power supplies, 3, Vorrichtung nach Anspruch 1 und 2, gekennzeichnet durch den Einsatz einc-r zusätzlichen steuerelektrode (18) hinr tt-r der Absaagclektrode (19) mit Linissionsöffnungen, de-3, device according to claim 1 and 2, characterized by the use of an additional control electrode (18) tt-r of the suction electrode (19) with line openings, iu.zahl und iinordnono mit denen der Absaugelektrodeiu.zahl and iinordnono with those of the suction electrode 4. Vorrichtung nach Einsprach 1 bis 3, dadurch gekermzeichneti daß je ein oder nehrere Einsätze (22) aus hochschmelzendein Material, vqrzugsweise entsprechend der Anzahl der Ionisationsrauaie 3iit je xnehreren nebeneinander angeordneten Smi3sions'5ffnungen in Qegenkatode (13) ? Absaugeleka trod« (19) und Steaeroltpktrade (18) aufeinender justiert sind.4. Device according to objection 1 to 3, characterized in that each one or more inserts (22) made of high-melting material, preferably according to the number of ionization rooms with each xnumerous juxtaposed communication openings in the counter cathode (13) ? Absaugeleka trod «(19) and Steaeroltpktrade (18) are adjusted to one another. 5. Vorrichtung nach Anspruch 1 bis 4, dadurch gekennzeichnet, daß die wlektrodeneixisätze (22) paarweise justiert5. Apparatus according to claim 1 to 4, characterized in that that the wlektrodeneixisätze (22) adjusted in pairs 0098 3 2/12280098 3 2/1228 ßA0 ORIGINALßA0 ORIGINAL 193Λ328193-328 and ihre Ebenen auf bestimmte durch das gefordert· Schichtdickenprofil auf dem Substrat vorgegebenen Winkel zur Achse der Vorrichtung eingestellt sind.and their planes at certain angles given by the required layer thickness profile on the substrate are adjusted to the axis of the device. Vorrichtung nach Anspruch 1 bis 5» dadurch gekennzeichnet, daß als Target (6) eine oder mehrere ebene, konvex oder konkav gekrümmte Platten (36) fcwis einheitliche» Material oder aus verschiedenen Materialien verwendet werden, deren Oberflächenabschnitte zu den Einfallsrichtungen der Ionen in bestimmten durch das geforderte Schichtdickenprofil auf dem Substrat vorgegebene, Winkel stehen. Device according to claims 1 to 5 »characterized in that one or more flat, convex or concave curved plates (36) fcwis uniform »material or made of different materials, the surface sections of which correspond to the directions of incidence of the ions are at certain angles given by the required layer thickness profile on the substrate.
DE19691934326 1968-10-17 1969-07-07 Multi-beam ion atomization system for the production of thin, uniform or alloyed layers Pending DE1934326A1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DD13543168 1968-10-17
DD13774469 1969-02-10
DE19691934320 DE1934320A1 (en) 1968-10-17 1969-07-07 Power chucks for clamping workpieces on machines
FR6930469A FR2063256A5 (en) 1968-10-17 1969-09-08
FR6931339A FR2064480A5 (en) 1968-10-17 1969-09-15
GB5503769A GB1294697A (en) 1968-10-17 1969-11-11 Apparatus for the selective sputtering of solid substances by means of ion bombardment according to the plasma or to the ion-beam process

Publications (1)

Publication Number Publication Date
DE1934326A1 true DE1934326A1 (en) 1970-08-06

Family

ID=27543993

Family Applications (3)

Application Number Title Priority Date Filing Date
DE19691934320 Pending DE1934320A1 (en) 1968-09-09 1969-07-07 Power chucks for clamping workpieces on machines
DE19691934326 Pending DE1934326A1 (en) 1968-10-17 1969-07-07 Multi-beam ion atomization system for the production of thin, uniform or alloyed layers
DE19691934328 Pending DE1934328A1 (en) 1968-10-17 1969-07-07 Device for the optional atomization of solid substances by ion bombardment using the plasma or ion beam method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19691934320 Pending DE1934320A1 (en) 1968-09-09 1969-07-07 Power chucks for clamping workpieces on machines

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19691934328 Pending DE1934328A1 (en) 1968-10-17 1969-07-07 Device for the optional atomization of solid substances by ion bombardment using the plasma or ion beam method

Country Status (4)

Country Link
CH (2) CH516226A (en)
DE (3) DE1934320A1 (en)
FR (2) FR2063256A5 (en)
GB (1) GB1294697A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2853251A1 (en) * 1978-12-09 1980-06-12 Willy Klein DISASSEMBLABLE AND TRANSPORTABLE MATERIAL CABINET
EP0019725A1 (en) * 1979-05-18 1980-12-10 International Business Machines Corporation Deposition method using an energetic particle beam
EP0177115A1 (en) * 1984-09-04 1986-04-09 The Standard Oil Company Dual ion beam deposition of amorphous semiconductor films

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3998718A (en) * 1976-02-18 1976-12-21 Bell Telephone Laboratories, Incorporated Ion milling apparatus
FR2410360A1 (en) * 1977-11-28 1979-06-22 Anvar SOURCE OF ION, ESPECIALLY FOR ION IMPLANTER
US4785220A (en) * 1985-01-30 1988-11-15 Brown Ian G Multi-cathode metal vapor arc ion source
DE102010007542A1 (en) 2010-02-08 2011-08-11 KHS Corpoplast GmbH, 22145 Method and apparatus for blow molding containers
CN115188648B (en) * 2022-09-08 2022-12-23 合肥中科离子医学技术装备有限公司 Internal penning source structure and cyclotron

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2853251A1 (en) * 1978-12-09 1980-06-12 Willy Klein DISASSEMBLABLE AND TRANSPORTABLE MATERIAL CABINET
EP0019725A1 (en) * 1979-05-18 1980-12-10 International Business Machines Corporation Deposition method using an energetic particle beam
EP0177115A1 (en) * 1984-09-04 1986-04-09 The Standard Oil Company Dual ion beam deposition of amorphous semiconductor films

Also Published As

Publication number Publication date
DE1934320A1 (en) 1971-05-13
FR2064480A5 (en) 1971-07-23
CH516226A (en) 1971-11-30
GB1294697A (en) 1972-11-01
FR2063256A5 (en) 1971-07-09
CH522951A (en) 1972-05-15
DE1934328A1 (en) 1970-04-30

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