DE178475C - - Google Patents

Info

Publication number
DE178475C
DE178475C DENDAT178475D DE178475DA DE178475C DE 178475 C DE178475 C DE 178475C DE NDAT178475 D DENDAT178475 D DE NDAT178475D DE 178475D A DE178475D A DE 178475DA DE 178475 C DE178475 C DE 178475C
Authority
DE
Germany
Prior art keywords
tungsten
class
mixture
ladders
connections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DENDAT178475D
Other languages
German (de)
English (en)
Publication of DE178475C publication Critical patent/DE178475C/de
Active legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01K—ELECTRIC INCANDESCENT LAMPS
    • H01K3/00—Apparatus or processes adapted to the manufacture, installing, removal, or maintenance of incandescent lamps or parts thereof
    • H01K3/02—Manufacture of incandescent bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
  • Resistance Heating (AREA)
DENDAT178475D Active DE178475C (OSRAM)

Publications (1)

Publication Number Publication Date
DE178475C true DE178475C (OSRAM)

Family

ID=442869

Family Applications (1)

Application Number Title Priority Date Filing Date
DENDAT178475D Active DE178475C (OSRAM)

Country Status (1)

Country Link
DE (1) DE178475C (OSRAM)

Similar Documents

Publication Publication Date Title
DE178475C (OSRAM)
Blaugher et al. Superconductivity in the σ and α-Mn structures
Sakurai Vector Currents and Spectral-Function Sum Rules
Dessau et al. Nature of the high-binding-energy dip in the low-temperature photoemission spectra of Bi 2 Sr 2 CaCu 2 O 8+ δ
Mackliet et al. Specific heat, electrical resistance, and other properties of superconducting Pd-H alloys
JPS63232470A (ja) 薄膜固体装置
DE3346239A1 (de) Beschaltungsmaterial fuer eine halbleitervorrichtung und verfahren zur bildung eines beschaltungsmusters
EP0296380B1 (de) Verfahren zur Erhöhung der kritischen Stromdichte in Supraleitern auf Kupferoxid-Basis
Lyo Theory of Electron-Phonon Enhancement of Thermoelectric Power in Metals
US3714520A (en) High temperature low ohmic contact to silicon
DE3779751T2 (de) Schaltung mit verwendung von widerstaenden, welche mittels metallwanderung eingestellt werden.
US3505059A (en) Method for forming fine and uniform dispersion of thorium dioxide in tungsten powder
DE3116680A1 (de) Kontaktwerkstoff aus einer kupferlegierung und verfahren zu seiner herstellung
US3844026A (en) Bond preparation in electrical deflection-sensitive transducer
Ghosh The Al-B-Fe (Aluminum-Boron-Iron) system
Kogut et al. An approximate calculation of the dimensionality dependence of the resistor lattice conductivity exponents
DE265328C (OSRAM)
DE69605615T2 (de) Stormbegrenzungsanordnung und Verfahren zur Herstellung
Weizer et al. Simple, extremely low resistance contact system to n‐InP that does not exhibit metal‐semiconductor intermixing during sintering
Kubo et al. Electrical Resistivity of Internally Oxidized Cu–Al Alloys
US4748493A (en) Diode and metal stud therefor
Rosenzweig et al. On the thermochemical stability of the pregalactic gas. 1: The equilibrium states
Wertheim et al. 57Fe Hyperfine Fields in Iron‐Cobalt Alloys
Shier Copper-titanium eutectic alloy improves electrical and mechanical contact to silicon carbide
CA1106709A (en) Conductive metal pigments