DE1621662A1 - Process for cleaning the surface of a semiconductor body - Google Patents

Process for cleaning the surface of a semiconductor body

Info

Publication number
DE1621662A1
DE1621662A1 DE19661621662 DE1621662A DE1621662A1 DE 1621662 A1 DE1621662 A1 DE 1621662A1 DE 19661621662 DE19661621662 DE 19661621662 DE 1621662 A DE1621662 A DE 1621662A DE 1621662 A1 DE1621662 A1 DE 1621662A1
Authority
DE
Germany
Prior art keywords
semiconductor body
cleaning
solution
semiconductor
gallium arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19661621662
Other languages
German (de)
Inventor
Friedrich-Wilhelm Dip Doerbeck
Rudolf Ries
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Publication of DE1621662A1 publication Critical patent/DE1621662A1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes

Description

"Verfahren zur Reinigung der Oberfläche eines Halbleiterkörpersll Die Erfindung betrifft ein Verfahren zur Reinigung der Oberfläche eines HalbleiterkÖrpersg insbesondere eines Gallium-Arsenid-Halbleiterkörpers, auf dessen gereinigter Oberfläche zur Herstellung von Schottky-Dioden Metallkontakte aufgebracht werden. dieses Halbleitermaterials ist aber -nicht ganz einfach, insbesondere unter Berücksizhtigung der Tatsache, daß die Erfahrungen bei der Behandlung#des Gallium-Arsenides wesentlich geringer sind als bei Germanium- oder Silizium-Halbleiterkörpern.The invention relates to a method for cleaning the surface of a semiconductor body, in particular a gallium arsenide semiconductor body, on the cleaned surface of which metal contacts are applied to produce Schottky diodes. However, this semiconductor material is not very simple, especially considering the fact that experience in treating gallium arsenide is significantly less than with germanium or silicon semiconductor bodies.

Bei zahlreichen Untersuchungen und Versuchen wurde - nun ein Verfahren ermittelt, mit dessen Hilfe die Oberfläche von Gallium-Arsenid-Halbleiterkörpern sehr gut gereinigt werden kann, und bei dem auf das so vorbereitete Halbleitermaterial Metallkontakte sowohl aufgedampft als auch galvanisch abgeschieden werden können.A method, the surface of gallium arsenide semiconductor bodies now determined, by means of which can be cleaned very well, and the metal contacts both vapor deposited onto the thus prepared semiconductor material than can be electrodeposited - in numerous studies and experiments was.

Die Erfindung soll noch anhand eines Ausführungsbeispiels näher erläutert werden.The invention is to be explained in more detail using an exemplary embodiment will.

Zunächst wird ein poliertes GaAs-Scheibchen etwa 1 Sekunde lang in eine Lösung eingetaucht, die sich aus 5 Teilen Phosphorsäure (H 3 PO 4 ), einem Teil Flußsäure (HF) und einem Teil Sal- (HNO petersäure 3 ) zusammensetzt'. Anschließend -wird der HalbleiterkÖrper etwa 5 Minuten lang in einer Lösung weiterbehandelt, die sich aus 7o ml Flußsäure (HF), 250 ml Wasser (H "0) und 150 g Ammon-Ium- zusammensetzt. Dabei wird der Halbleiterkörper vortellhafterweise in der Lösung hin und her bewegt. Wenn nun der Metallkontakt galvanisch auf dem HalbleiterkÖrper abgeschieden werden soll, wird dieser nach doppeltem Reinigungsprazeß sofort in das galvanische Bad eIngebracht, das im allgemeinen ein zyanidisches Bad sein soll. Sollen die Schottky-Metall-Kontakte jedoch in einer Hochvakuumaufdampfanlage aufgebracht werden, so wird der GaAs-Halbleiterkörper mit deionisiertem Wasser und dana,ch noch in Petroleumbenzin (Siedebereich 4o - 6o C) abgespült und dann sofort in die Hochvakuumsanlage eingebracht. Der bei der Aufdampfung in der Anlage herr--7 . schende,Druck muß etwa lo Torr betragen. Mit Hilfe deg hier beschriebenen Verfahrens 1,zonnten die Oßerflächen von Gallium-Arsenid-Halbleiterkörpern sehr sauber und frei von Oxydverunreinigungen gehalten werden, so daß es gelang, Schottky-Ilioden mit zufriedenstellenden Kennwerten aus Gallium-Arsenid-Halbleiterkörpern -herzustellen.First, a polished GaAs disc is immersed for about 1 second in a solution composed of 5 parts of phosphoric acid (H 3 PO 4 ), one part of hydrofluoric acid (HF) and one part of nitric acid (HNO pitric acid 3) . The semiconductor body is then further treated for about 5 minutes in a solution consisting of 70 ml of hydrofluoric acid (HF), 250 ml of water (H "0) and 150 g of ammonium- composed. In this case, the semiconductor body is advantageously moved back and forth in the solution. If the metal contact is to be electrodeposited on the semiconductor body, it is immediately introduced into the galvanic bath after a double cleaning process, which is generally supposed to be a cyanide bath. However, if the Schottky metal contacts are to be applied in a high vacuum evaporation system, the GaAs semiconductor body is rinsed with deionized water and then in petroleum spirit (boiling range 4o - 6o C) and then immediately placed in the high vacuum system. The result of the evaporation in the system - 7 . shear pressure must be about lo Torr. With the aid of method 1 described here, the outer surfaces of gallium arsenide semiconductor bodies were kept very clean and free of oxide impurities, so that it was possible to produce Schottky iodes with satisfactory characteristics from gallium arsenide semiconductor bodies.

Claims (1)

P a t e n t a n s p r ü c h e
4) Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß nach der Behandlung des Halbleiterkörpers in einer ersten Lösung dieser in einer zweiten Lösung weiterbehandelt wird, die sich aus 70 ml Flußsäure HF,aus 25o ml Wasser und aus 15o g Ammuniumfluorid öder aus einer verhältnisgleicheri Mischung zusammensetzt. 5) Verfahren nach Anspruch 4, dadurch gekennzeichnet, daß der Halbleiterkörper in der aus Flußsäure, Wasser und Ammoniumfluorid bestehenden Lösung ca. 5 Minuten belassen wird.P atentan s p r u che
4) The method according to claim 1, characterized in that after the treatment of the semiconductor body in a first solution, this is further treated in a second solution, which is composed of 70 ml of hydrofluoric acid HF, of 25o ml of water and 15o g of ammonium fluoride or a mixture of proportions composed. 5) Method according to claim 4, characterized in that the semiconductor body is left in the solution consisting of hydrofluoric acid, water and ammonium fluoride for about 5 minutes.
DE19661621662 1966-02-11 1966-02-11 Process for cleaning the surface of a semiconductor body Pending DE1621662A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET0030438 1966-02-11

Publications (1)

Publication Number Publication Date
DE1621662A1 true DE1621662A1 (en) 1971-06-03

Family

ID=7555577

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19661621662 Pending DE1621662A1 (en) 1966-02-11 1966-02-11 Process for cleaning the surface of a semiconductor body

Country Status (1)

Country Link
DE (1) DE1621662A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0405886A2 (en) * 1989-06-26 1991-01-02 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0405886A2 (en) * 1989-06-26 1991-01-02 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment
EP0405886A3 (en) * 1989-06-26 1991-03-13 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment

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