DE155531C - - Google Patents
Info
- Publication number
- DE155531C DE155531C DENDAT155531D DE155531DA DE155531C DE 155531 C DE155531 C DE 155531C DE NDAT155531 D DENDAT155531 D DE NDAT155531D DE 155531D A DE155531D A DE 155531DA DE 155531 C DE155531 C DE 155531C
- Authority
- DE
- Germany
- Prior art keywords
- relay
- line
- call
- battery
- jack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003990 capacitor Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M9/00—Arrangements for interconnection not involving centralised switching
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE155531C true DE155531C (fr) |
Family
ID=421992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DENDAT155531D Active DE155531C (fr) |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE155531C (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7229693B2 (en) | 1997-04-09 | 2007-06-12 | Memc Electronic Materials, Inc. | Low defect density, ideal oxygen precipitating silicon |
-
0
- DE DENDAT155531D patent/DE155531C/de active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7229693B2 (en) | 1997-04-09 | 2007-06-12 | Memc Electronic Materials, Inc. | Low defect density, ideal oxygen precipitating silicon |
| US7442253B2 (en) | 1997-04-09 | 2008-10-28 | Memc Electronic Materials, Inc. | Process for forming low defect density, ideal oxygen precipitating silicon |
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