DE1274232B - Verfahren zum Herstellen von als Rekombinationsstrahler wirksamen Halbleiterbauteilen - Google Patents
Verfahren zum Herstellen von als Rekombinationsstrahler wirksamen HalbleiterbauteilenInfo
- Publication number
- DE1274232B DE1274232B DEJ34082A DEJ0034082A DE1274232B DE 1274232 B DE1274232 B DE 1274232B DE J34082 A DEJ34082 A DE J34082A DE J0034082 A DEJ0034082 A DE J0034082A DE 1274232 B DE1274232 B DE 1274232B
- Authority
- DE
- Germany
- Prior art keywords
- zone
- melt
- crystal
- recombination
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 31
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 230000006798 recombination Effects 0.000 title description 33
- 238000005215 recombination Methods 0.000 title description 33
- 239000013078 crystal Substances 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 230000007704 transition Effects 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 20
- 239000000155 melt Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 16
- 239000002800 charge carrier Substances 0.000 claims description 15
- 238000001953 recrystallisation Methods 0.000 claims description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 239000000969 carrier Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 230000005855 radiation Effects 0.000 description 24
- 239000000370 acceptor Substances 0.000 description 23
- 238000010521 absorption reaction Methods 0.000 description 18
- 239000002019 doping agent Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 15
- 230000007547 defect Effects 0.000 description 14
- 238000006862 quantum yield reaction Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US56544066A | 1966-07-15 | 1966-07-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1274232B true DE1274232B (de) | 1968-08-01 |
Family
ID=24258610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEJ34082A Withdrawn DE1274232B (de) | 1966-07-15 | 1967-07-07 | Verfahren zum Herstellen von als Rekombinationsstrahler wirksamen Halbleiterbauteilen |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5120873B1 (enrdf_load_stackoverflow) |
| BE (1) | BE699987A (enrdf_load_stackoverflow) |
| CH (1) | CH490781A (enrdf_load_stackoverflow) |
| DE (1) | DE1274232B (enrdf_load_stackoverflow) |
| FR (1) | FR1529040A (enrdf_load_stackoverflow) |
| GB (1) | GB1170799A (enrdf_load_stackoverflow) |
| NL (1) | NL6706639A (enrdf_load_stackoverflow) |
| SE (1) | SE316832B (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1432697A (en) * | 1973-05-04 | 1976-04-22 | Standard Telephones Cables Ltd | Optically coupled semiconductive switching devices |
| JPS62132986U (enrdf_load_stackoverflow) * | 1986-02-13 | 1987-08-21 | ||
| CN114520270B (zh) * | 2020-11-20 | 2024-07-05 | 苏州华太电子技术股份有限公司 | 一种间接带隙半导体光电探测器件及其制作方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1052563B (de) * | 1957-03-05 | 1959-03-12 | Albrecht Fischer Dipl Phys | Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen |
-
1967
- 1967-05-12 NL NL6706639A patent/NL6706639A/xx unknown
- 1967-05-17 JP JP3096367A patent/JPS5120873B1/ja active Pending
- 1967-05-18 GB GB23009/67A patent/GB1170799A/en not_active Expired
- 1967-06-12 FR FR8564A patent/FR1529040A/fr not_active Expired
- 1967-06-15 BE BE699987A patent/BE699987A/xx unknown
- 1967-06-30 SE SE10205/67*A patent/SE316832B/xx unknown
- 1967-07-07 DE DEJ34082A patent/DE1274232B/de not_active Withdrawn
- 1967-07-12 CH CH1002367A patent/CH490781A/de not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1052563B (de) * | 1957-03-05 | 1959-03-12 | Albrecht Fischer Dipl Phys | Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen |
Also Published As
| Publication number | Publication date |
|---|---|
| SE316832B (enrdf_load_stackoverflow) | 1969-11-03 |
| CH490781A (de) | 1970-05-15 |
| BE699987A (enrdf_load_stackoverflow) | 1967-11-16 |
| GB1170799A (en) | 1969-11-19 |
| NL6706639A (enrdf_load_stackoverflow) | 1968-01-16 |
| JPS5120873B1 (enrdf_load_stackoverflow) | 1976-06-28 |
| FR1529040A (fr) | 1968-06-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E77 | Valid patent as to the heymanns-index 1977 | ||
| 8339 | Ceased/non-payment of the annual fee |