DE1273954B - Process for the galvanic coating of p-conducting germanium with antimony, lead or alloys of these metals - Google Patents
Process for the galvanic coating of p-conducting germanium with antimony, lead or alloys of these metalsInfo
- Publication number
- DE1273954B DE1273954B DEN24534A DEN0024534A DE1273954B DE 1273954 B DE1273954 B DE 1273954B DE N24534 A DEN24534 A DE N24534A DE N0024534 A DEN0024534 A DE N0024534A DE 1273954 B DE1273954 B DE 1273954B
- Authority
- DE
- Germany
- Prior art keywords
- antimony
- lead
- potential
- layer
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 title claims description 31
- 229910052787 antimony Inorganic materials 0.000 title claims description 30
- 229910052732 germanium Inorganic materials 0.000 title claims description 18
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 18
- 229910045601 alloy Inorganic materials 0.000 title claims description 9
- 239000000956 alloy Substances 0.000 title claims description 9
- 229910052751 metal Inorganic materials 0.000 title claims description 9
- 239000002184 metal Substances 0.000 title claims description 9
- 238000000034 method Methods 0.000 title claims description 9
- 150000002739 metals Chemical class 0.000 title claims description 7
- 239000011248 coating agent Substances 0.000 title claims 3
- 238000000576 coating method Methods 0.000 title claims 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 15
- IHBMMJGTJFPEQY-UHFFFAOYSA-N sulfanylidene(sulfanylidenestibanylsulfanyl)stibane Chemical group S=[Sb]S[Sb]=S IHBMMJGTJFPEQY-UHFFFAOYSA-N 0.000 claims description 8
- 239000001509 sodium citrate Substances 0.000 claims description 5
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 5
- WBTCZEPSIIFINA-MSFWTACDSA-J dipotassium;antimony(3+);(2r,3r)-2,3-dioxidobutanedioate;trihydrate Chemical compound O.O.O.[K+].[K+].[Sb+3].[Sb+3].[O-]C(=O)[C@H]([O-])[C@@H]([O-])C([O-])=O.[O-]C(=O)[C@H]([O-])[C@@H]([O-])C([O-])=O WBTCZEPSIIFINA-MSFWTACDSA-J 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 238000005868 electrolysis reaction Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- 239000003792 electrolyte Substances 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 4
- 229910001245 Sb alloy Inorganic materials 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 3
- 239000002244 precipitate Substances 0.000 claims 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 2
- 239000000020 Nitrocellulose Substances 0.000 claims 2
- 230000001419 dependent effect Effects 0.000 claims 2
- 239000004922 lacquer Substances 0.000 claims 2
- 229920001220 nitrocellulos Polymers 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 229920006395 saturated elastomer Polymers 0.000 claims 2
- 229910000679 solder Inorganic materials 0.000 claims 2
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 108010010803 Gelatin Proteins 0.000 claims 1
- 241000530268 Lycaena heteronea Species 0.000 claims 1
- 229910000978 Pb alloy Inorganic materials 0.000 claims 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims 1
- 239000002140 antimony alloy Substances 0.000 claims 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims 1
- 239000004327 boric acid Substances 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 229920000159 gelatin Polymers 0.000 claims 1
- 239000008273 gelatin Substances 0.000 claims 1
- 235000019322 gelatine Nutrition 0.000 claims 1
- 235000011852 gelatine desserts Nutrition 0.000 claims 1
- SUBGURZSWAMWPI-UHFFFAOYSA-N germanium lead Chemical compound [Ge].[Pb] SUBGURZSWAMWPI-UHFFFAOYSA-N 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 239000011975 tartaric acid Substances 0.000 claims 1
- 235000002906 tartaric acid Nutrition 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 238000009713 electroplating Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- IIQJBVZYLIIMND-UHFFFAOYSA-J potassium;antimony(3+);2,3-dihydroxybutanedioate Chemical compound [K+].[Sb+3].[O-]C(=O)C(O)C(O)C([O-])=O.[O-]C(=O)C(O)C(O)C([O-])=O IIQJBVZYLIIMND-UHFFFAOYSA-J 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/34—Electroplating: Baths therefor from solutions of lead
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/923—Physical dimension
- Y10S428/924—Composite
- Y10S428/926—Thickness of individual layer specified
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9335—Product by special process
- Y10S428/934—Electrical process
- Y10S428/935—Electroplating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12701—Pb-base component
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Description
DEUTSCHESGERMAN
PATENTAMTPATENT OFFICE
AUSLEGESCHRIFTEDITORIAL
Int. CL: Int. CL:
C23bC23b
Deutsche Kl.: 48 a - 5/50 German class: 48 a - 5/50
Nummer: 1273 954Number: 1273 954
Aktenzeichen: P 12 73 954.7-45 (N 24534)File number: P 12 73 954.7-45 (N 24534)
Anmeldetag: 29. Februar 1964 Filing date: February 29, 1964
Auslegetag: 25. Juli 1968Opening day: July 25, 1968
Die Erfindung bezieht sich auf ein Verfahren zum galvanischen Überziehen von p-leitendem Germanium mit Antimon, Blei oder Legierungen dieser Metalle unter Verwendung einer Antimonzwischenschicht.The invention relates to a method for electroplating p-type germanium with antimony, lead or alloys of these metals using an antimony intermediate layer.
Es sind verschiedene Verfahren zum galvanischen Überziehen von elektrisch leitendem Material mit Antimon, Blei oder Legierungen dieser Metalle bekannt. Insbesondere ist es bekannt, Germanium galvanisch mit zwei Schichten von Antimon zu überziehen, wobei die erste Antimonschicht aus einem wäßrigen, Natriumzitrat, Zitronensäure und Kaliumantimontartrat enthaltenden Bad niedergeschlagen wird (USA.-Patentschrift 2 817 629).There are various methods of electroplating electrically conductive material with Antimony, lead or alloys of these metals are known. In particular, it is known to galvanize germanium to be coated with two layers of antimony, the first layer of antimony being made of one aqueous bath containing sodium citrate, citric acid and potassium antimony tartrate (U.S. Patent 2,817,629).
Es hat sich jedoch gezeigt, daß es mit den bekannten Verfahren nicht möglich ist, p-leitendes Germanium genügend gleichmäßig mit Antimon, Blei oder einer Legierung dieser beiden Metalle zu bedecken, wie dies zum Anbringen sehr kleiner niederohmiger Kontakte auf Germaniumtransistoren erforderlich ist. Die Oberfläche von p-leitendem Germanium wird in der Regel nur mangelhaft mit dem Metall bedeckt.However, it has been shown that it is with the known Method is not possible, p-type germanium sufficiently evenly with antimony, lead or an alloy of these two metals to cover, as this is for attaching very small low resistance Contacts on germanium transistors is required. The surface of p-type germanium is usually only insufficiently covered with the metal.
Verschiedene chemische und elektrochemische Vorbehandlungen des p-leitenden Germaniums, wie chemisches Ätzen mittels eines fluoridhaltigen Bades, anodisches Beizen in einer Kalilaugenlösung, während kurzer Zeit anodisches Schalten im Bleibad, aus dem darauf kathodisch Blei niedergeschlagen wird, wurden erfolglos erprobt. Auch Elektrolyse bei erhöhter Temperatur gab nicht das gewünschte Ergebnis.Various chemical and electrochemical pretreatments of the p-type germanium, such as chemical Etching using a fluoride bath, anodic pickling in a potassium hydroxide solution, while a short time anodic switching in the lead bath, from which lead is cathodically deposited on it tried unsuccessfully. Electrolysis at elevated temperatures also did not give the desired result.
Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren anzugeben, mit dem eine völlige Bedeckung von p-leitendem Gemanium mit den genannten Metallen möglich ist. Diese Aufgabe wird dadurch gelöst, daß die Antimonzwischenschicht mit einer Dicke von etwa 0,1 bis 1 μ bei einem dem Sättigungsstrom entsprechenden Kathodenpotential ohne Gasentwicklung abgeschieden wird.The invention is based on the object of specifying a method with which a complete covering of p-conducting Gemanium with the metals mentioned is possible. This object is achieved in that the antimony intermediate layer has a thickness from about 0.1 to 1 μ at a cathode potential corresponding to the saturation current without gas evolution is deposited.
Vorzugsweise wird auf die Antimonzwischenschicht aus dem gleichen Bad eine zweite Antimonzwischenschicht aus grauem Antimon bei einem um 200 bis 35OmV erhöhten Kathodenpotential aufgebracht. A second antimony intermediate layer is preferably applied to the antimony intermediate layer from the same bath made of gray antimony at a cathode potential increased by 200 to 35OmV.
Als Bad wird vorzugsweise eine wäßrige Lösung von 15 bis 19 g/l Kaliumantimonyltartrat, 15 bis 52 g/l Zitronensäure und 37,5 bis 195 g/l Natriumzitrat mit einem pH-Wert von über 6 verwendet.The bath is preferably an aqueous solution of 15 to 19 g / l potassium antimonyl tartrate, 15 to 52 g / l citric acid and 37.5 to 195 g / l sodium citrate with a pH above 6 are used.
Um Antimon in kompakter grauer Form galvanisch niederzuschlagen, war es bekannt, daß zu diesem Zweck ein bestimmter kritischer Wert der Stromdichte nicht überschritten werden darf, da sonst Antimon in schwarzer Form mit mehr oder weniger Verfahren zum galvanischen ÜberziehenIn order to galvanically deposit antimony in a compact gray form, it was known that to this Purpose a certain critical value of the current density must not be exceeded, otherwise Black antimony with more or less electroplating processes
von p-leitendem Germanium mit Antimon, Blei oder Legierungen dieser Metalleof p-type germanium with antimony, lead or alloys of these metals
Anmelder:Applicant:
N. V. Philips' Gloeilampenfabrieken,N. V. Philips' Gloeilampenfabrieken,
Eindhoven (Niederlande)Eindhoven (Netherlands)
Vertreter:Representative:
Dipl.-Ing. E. E. Walther, Patentanwalt,Dipl.-Ing. E. E. Walther, patent attorney,
2000 Hamburg 1, Mönckebergstr. 72000 Hamburg 1, Mönckebergstr. 7th
Als Erfinder benannt:
Clara Henderina de Minjer,
Emmasingel, Eindhoven (Niederlande)Named as inventor:
Clara Henderina de Minjer,
Emmasingel, Eindhoven (Netherlands)
Beanspruchte Priorität:Claimed priority:
Niederlande vom 5. März 1963 (289 818)Netherlands 5 March 1963 (289 818)
poröser Struktur entsteht. Beim Zustandekommen der Erfindung hat sich ergeben, daß gerade bei hohen Stromdichten das p-leitende Germanium völlig mit diesem schwarzen Antimon bedeckt wird.porous structure is created. When the invention came about, it was found that just at high current densities, the p-type germanium is completely covered with this black antimony.
Es hat sich gezeigt, daß die Stromdichte (z) als Funktion des Kathodenpotentials (E) eine Form hat, wie diese in der Zeichnung dargestellt worden ist. Dieser Verlauf gilt für ein Antimonbad der Zusammensetzung It has been found that the current density (z) as a function of the cathode potential (E) has a form as shown in the drawing. This course applies to an antimony bath of the composition
16 g Kaliumantimonyltartrat,
82 g Natriumzitrat und
25 g Zitronensäure16 g potassium antimonyl tartrate,
82 g sodium citrate and
25 g citric acid
pro Liter Lösung in Wasser und einen pH-Wert von etwa 5,8.per liter of solution in water and a pH of about 5.8.
Die angegebene EMK ist gegenüber einer Normalwasserstoffelektrode gemessen. Wenn sich das Potential vom weniger negativen zum stärker negativen bewegt, beginnt sich bei etwa — 600 mV hellgraues Antimon abzuscheiden. Bei weiterer Herab-Setzung des Kathodenpotentials bis zu etwa — 850 mV, wobei die Sättigungsstromdichte von etwa 0,28 A/dm2 erreicht wird, beginnt sich schwarzes Antimon ab-The specified EMF is measured against a standard hydrogen electrode. When the potential moves from the less negative to the more negative, light gray antimony begins to deposit at around - 600 mV. If the cathode potential is further reduced to about -850 mV, whereby the saturation current density of about 0.28 A / dm 2 is reached, black antimony begins to form.
809 587/463809 587/463
Claims (1)
dem sogenannten schwarzen Antimon eine völligeIt has surprisingly been found that with a mixture of
the so-called black antimony a complete one
gezeigt, daß eine hierauf niedergeschlagene Schichthas a somewhat porous structure, it has stained 5 ml of ethanol,
shown that a layer deposited on it
geschlagene Schicht betrifft.complete coverage by the subsequently deposited, the per liter
beaten layer concerns.
abgeschieden ist, mittels jedes an sich bekannten 30after the thin layer of black antimony 25 g of citric acid
is deposited, by means of any 30 known per se
und dem Germanium ein Potentialunterschied vonCase, then between the power supply wire .. 0.5 g gelatin,
and the germanium a potential difference of
USA.-Patentschriften Nr. 2817629, 2753 299.Considered publications:
U.S. Patent Nos. 2817629, 2753 299.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL289818 | 1963-03-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1273954B true DE1273954B (en) | 1968-07-25 |
Family
ID=19754481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEN24534A Pending DE1273954B (en) | 1963-03-05 | 1964-02-29 | Process for the galvanic coating of p-conducting germanium with antimony, lead or alloys of these metals |
Country Status (5)
Country | Link |
---|---|
US (1) | US3322516A (en) |
DE (1) | DE1273954B (en) |
FR (1) | FR1383653A (en) |
GB (1) | GB1064274A (en) |
NL (1) | NL289818A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2709385A1 (en) * | 1977-03-04 | 1978-09-07 | Heinrich Prof Dr Ing Gobrecht | ELECTROLYTIC DEPOSITORY CELL |
SE434895B (en) * | 1979-02-21 | 1984-08-20 | Mo Inzh Fizichesky I | MERCURY SWITCH AND PROCEDURE FOR MANUFACTURING THE SAME |
CN101235526B (en) * | 2007-11-01 | 2010-08-18 | 华侨大学 | Plating liquor for electroplating low-antimony-lead alloy and preparation method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2753299A (en) * | 1953-04-23 | 1956-07-03 | Bell Telephone Labor Inc | Electroplating with antimony |
US2817629A (en) * | 1953-10-23 | 1957-12-24 | Gen Motors Corp | Antimony plating bath |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA608181A (en) * | 1960-11-08 | F. Smart Clarence | Antimony plating bath | |
BE506280A (en) * | 1950-10-10 |
-
0
- NL NL289818D patent/NL289818A/xx unknown
-
1964
- 1964-02-29 DE DEN24534A patent/DE1273954B/en active Pending
- 1964-03-02 GB GB8706/64A patent/GB1064274A/en not_active Expired
- 1964-03-03 US US349182A patent/US3322516A/en not_active Expired - Lifetime
- 1964-03-04 FR FR966064A patent/FR1383653A/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2753299A (en) * | 1953-04-23 | 1956-07-03 | Bell Telephone Labor Inc | Electroplating with antimony |
US2817629A (en) * | 1953-10-23 | 1957-12-24 | Gen Motors Corp | Antimony plating bath |
Also Published As
Publication number | Publication date |
---|---|
US3322516A (en) | 1967-05-30 |
FR1383653A (en) | 1964-12-24 |
GB1064274A (en) | 1967-04-05 |
NL289818A (en) |
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