DE1171231B - Cyanide gold bath - Google Patents
Cyanide gold bathInfo
- Publication number
- DE1171231B DE1171231B DET20824A DET0020824A DE1171231B DE 1171231 B DE1171231 B DE 1171231B DE T20824 A DET20824 A DE T20824A DE T0020824 A DET0020824 A DE T0020824A DE 1171231 B DE1171231 B DE 1171231B
- Authority
- DE
- Germany
- Prior art keywords
- gold
- cyanide
- gold bath
- bath
- cyanide gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- MXZVHYUSLJAVOE-UHFFFAOYSA-N gold(3+);tricyanide Chemical compound [Au+3].N#[C-].N#[C-].N#[C-] MXZVHYUSLJAVOE-UHFFFAOYSA-N 0.000 title claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 22
- 239000010931 gold Substances 0.000 claims description 22
- 229910052737 gold Inorganic materials 0.000 claims description 22
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910017974 NH40H Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/48—Electroplating: Baths therefor from solutions of gold
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/62—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of gold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemically Coating (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Description
Zyanidisches Goldbad Die Erfindung betrifft eine Goldbadzusammensetzung, die sich bei der Erzeugung einer festhaftenden Goldauflage, insbesondere auf Silizium bewährt hat.Cyanide gold bath The invention relates to a gold bath composition, which occurs in the production of a firmly adhering gold plating, especially on silicon has proven itself.
Für verschiedene Herstellungsverfahren in der Halbleitertechnik ist es notwendig, Gold in flächenhafter Ausdehnung gleichmäßig in Silizium einzulegieren. Hierzu wird üblicherweise eine Goldschicht auf die Oberfläche des Siliziums aufgebracht und anschließend die Legierungsbildung durch Erhitzen dieses Halbleitermaterials eingeleitet. Bekanntlich bereitet aber das Aufbringen einer solchen genügend festhaftenden Goldschicht auf Silizium große Schwierigkeiten, da die durch bisher bekannte elektrolytische Verfahren hergestellte Goldschicht leicht abblättert, sich während des darauffolgenden Legierungsprozesses zu kleinen Goldkügelchen zusammenzieht und so die geforderte gleichmäßige flächenhafte Einlegierung nicht mehr erreichbar ist. Auch ist es schon bekannt, diese Schwierigkeit durch Aufdampfen einer Goldschicht auf das Siliziumgrundmaterial zu beseitigen, was aber auch hierbei oftmals nur unvollständig gelingt. Jedoch haftet diesem letzterem Verfahren der Nachteil des sehr großen Aufwandes an. Weiterhin ist ein Verfahren bekanntgeworden, welches vorsieht, schwer zu vergoldende Gegenstände aus Stahl- oder Eisenlegierungen zuvor in einer Flußsäure- und Fluokieselsäurelösung zu behandeln, um eine bessere Haftfestigkeit des Goldüberzuges zu erzielen. Dieses bekannte Verfahren weist aber den wesentlichen Nachteil auf, daß die Vergoldung in einem Zweistufenverfahren vorgenommen werden muß, wobei besonders bei sehr leicht oxydierenden Materialien die Gefahr besteht, daß sich während des Wechsels vom Reinigungsbad zum Vergoldungsbad die Oberfläche des zu vergoldenden Körpers teilweise verschmutzt bzw. mit einer feinen Oxydschicht bedeckt, die eine einwandfreie Vergoldung stört.For various manufacturing processes in semiconductor technology is it is necessary to alloy gold evenly in silicon over a large area. For this purpose, a gold layer is usually applied to the surface of the silicon and then alloying by heating this semiconductor material initiated. As is well known, however, the application of such prepares sufficiently firmly adhering Gold layer on silicon great difficulties because of the electrolytic The gold layer produced easily peels off during the subsequent process Alloy process contracts to form small gold spheres and so the required uniform, extensive inlay can no longer be achieved. It is also already known, this difficulty by vapor deposition of a gold layer on the silicon base material to eliminate, which, however, often only succeeds incompletely here. However, is liable this latter process has the disadvantage of being very costly. Farther a method has become known which provides objects that are difficult to gild made of steel or iron alloys beforehand in a hydrofluoric acid and fluosilicic acid solution to be treated in order to achieve better adhesion of the gold coating. This known method but has the major disadvantage that the gold plating must be done in a two-step process, especially with very easy There is a risk of oxidizing materials that they will be removed during the change from the cleaning bath for the gold-plating bath, the surface of the body to be gold-plated is partially contaminated or covered with a fine layer of oxide that interferes with proper gilding.
Aufgabe der Erfindung ist es nun, die Zusammensetzung eines Goldbades anzugeben, das diese Nachteile nicht aufweist, und mit dem es möglich ist, eine genügend festhaftende Goldschicht galvanisch insbesondere auf Silizium abzuscheiden, um beim darauffolgenden Legierungsprozeß das Bilden von Goldkügelchen zu vermeiden.The object of the invention is now to determine the composition of a gold bath indicate that does not have these disadvantages and with which it is possible to create a to galvanically deposit a sufficiently firmly adhering gold layer, in particular on silicon, in order to avoid the formation of gold spheres in the subsequent alloying process.
Erfindungsgemäß wird ein zyanidisches Goldbad verwendet, das dadurch gekennzeichnet ist, daß es Flußsäure (HF) und Fluokieselsäure (HZSiFg) enthält.According to the invention, a cyanide gold bath is used, which thereby is characterized in that it contains hydrofluoric acid (HF) and fluosilicic acid (HZSiFg).
In diesem Zusammenhang wird der Vollständigkeit wegen die Zusammensetzung einer an sich bekannten zyanidischen Goldlösung angegeben. Sie enthält pro Liter zyanidischer Goldlösung 4 g Gold, 14 g KCN und 10 g wasserfreies Na2C0g.In this context, for the sake of completeness, the composition is used a known cyanidic gold solution. It contains per liter cyanide gold solution 4 g gold, 14 g KCN and 10 g anhydrous Na2C0g.
Weiterhin kann das erfindungsgemäße Goldbad zusätzlich Zitrationen enthalten.Furthermore, the gold bath according to the invention can additionally contain citrations contain.
Im folgenden wird ein Ausführungsbeispiel des erfindungsgemäßen Goldbades angegeben, wie es in der Praxis zur Anwendung gekommen ist. Es besteht aus 40 ml zyanidischer Goldlösung, 5 ml Ammoniumhydroxyd (NH40H), 1 g Ammoniumzitrat (NH4CBH80,), 5 ml Flußsäure (HF, 38 bis 40°/oig), 5 ml Fluokieselsäure (HZSiFe, 27°/oig).The following is an embodiment of the gold bath according to the invention indicated how it was used in practice. It consists of 40 ml cyanide gold solution, 5 ml ammonium hydroxide (NH40H), 1 g ammonium citrate (NH4CBH80,), 5 ml hydrofluoric acid (HF, 38 to 40%), 5 ml fluosilicic acid (HZSiFe, 27%).
Beim Herstellungsverfahren des erfindungsgemäßen Goldbades ist es wesentlich, erst das 1 g Ammoniumzitrat in 40 ml zyanidischer Goldlösung und 5 ml Ammoniumhydroxyd zu lösen und dann anschließend erst die Mischung von 5 ml Flußsäure und 5 ml Fluokieselsäure dazuzugeben.In the production process of the gold bath according to the invention, it is essential, first the 1 g of ammonium citrate in 40 ml of cyanide gold solution and 5 ml Dissolve ammonium hydroxide and then only then the mixture of 5 ml of hydrofluoric acid and add 5 ml of fluosilicic acid.
Bei einer Stromdichte von etwa 25 mA/cm2 erzielt man in einer Minute eine Goldabscheidung auf dem Siliziumgrundmaterial von ungefähr 0,08 #t Schichtdicke.A current density of around 25 mA / cm2 is achieved in one minute a gold deposit on the silicon base material of approximately 0.08 #t layer thickness.
Claims (1)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET20824A DE1171231B (en) | 1961-09-23 | 1961-09-23 | Cyanide gold bath |
| DE19621446068 DE1446068A1 (en) | 1961-09-23 | 1962-06-13 | Gold bath to create a firmly adhering gold layer on silicon |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET20824A DE1171231B (en) | 1961-09-23 | 1961-09-23 | Cyanide gold bath |
| DET0022296 | 1962-06-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1171231B true DE1171231B (en) | 1964-05-27 |
Family
ID=32772998
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DET20824A Pending DE1171231B (en) | 1961-09-23 | 1961-09-23 | Cyanide gold bath |
| DE19621446068 Pending DE1446068A1 (en) | 1961-09-23 | 1962-06-13 | Gold bath to create a firmly adhering gold layer on silicon |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19621446068 Pending DE1446068A1 (en) | 1961-09-23 | 1962-06-13 | Gold bath to create a firmly adhering gold layer on silicon |
Country Status (1)
| Country | Link |
|---|---|
| DE (2) | DE1171231B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2227454A (en) * | 1937-11-11 | 1941-01-07 | Benjamin Robinson | Method of gold plating steel and ferrous alloys |
-
1961
- 1961-09-23 DE DET20824A patent/DE1171231B/en active Pending
-
1962
- 1962-06-13 DE DE19621446068 patent/DE1446068A1/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2227454A (en) * | 1937-11-11 | 1941-01-07 | Benjamin Robinson | Method of gold plating steel and ferrous alloys |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1446068A1 (en) | 1968-12-19 |
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