DE1156156B - Elektrisches Schaltelement, das den quantenmechanischen Tunneleffekt ausnutzt - Google Patents
Elektrisches Schaltelement, das den quantenmechanischen Tunneleffekt ausnutztInfo
- Publication number
- DE1156156B DE1156156B DEJ21203A DEJ0021203A DE1156156B DE 1156156 B DE1156156 B DE 1156156B DE J21203 A DEJ21203 A DE J21203A DE J0021203 A DEJ0021203 A DE J0021203A DE 1156156 B DE1156156 B DE 1156156B
- Authority
- DE
- Germany
- Prior art keywords
- switching element
- potential threshold
- layer
- current
- quantum mechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims description 10
- 230000005294 ferromagnetic effect Effects 0.000 claims description 14
- 230000005291 magnetic effect Effects 0.000 description 25
- 239000000463 material Substances 0.000 description 12
- 230000005641 tunneling Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000003302 ferromagnetic material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- -1 B. Nickel Chemical compound 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/44—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
- H01F1/14—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/92—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of superconductive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/11—Single-electron tunnelling devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US86809A US3229172A (en) | 1961-02-02 | 1961-02-02 | Solid state electrical circuit component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1156156B true DE1156156B (de) | 1963-10-24 |
Family
ID=22201059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEJ21203A Pending DE1156156B (de) | 1961-02-02 | 1962-01-25 | Elektrisches Schaltelement, das den quantenmechanischen Tunneleffekt ausnutzt |
Country Status (7)
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3972035A (en) * | 1972-06-23 | 1976-07-27 | International Business Machines Corporation | Detection of magnetic domains by tunnel junctions |
| US3840865A (en) * | 1972-06-23 | 1974-10-08 | Ibm | Detection of magnetic domains by tunnel junctions |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2221596A (en) * | 1938-01-22 | 1940-11-12 | Fides Gmbh | Method of manufacturing dry rectifiers |
| BE435936A (US06174465-20010116-C00003.png) * | 1938-08-12 | |||
| NL97896C (US06174465-20010116-C00003.png) * | 1955-02-18 | |||
| US3056073A (en) * | 1960-02-15 | 1962-09-25 | California Inst Res Found | Solid-state electron devices |
| US3024140A (en) * | 1960-07-05 | 1962-03-06 | Space Technology Lab Inc | Nonlinear electrical arrangement |
| US3116427A (en) * | 1960-07-05 | 1963-12-31 | Gen Electric | Electron tunnel emission device utilizing an insulator between two conductors eitheror both of which may be superconductive |
-
0
- NL NL274072D patent/NL274072A/xx unknown
-
1961
- 1961-02-02 US US86809A patent/US3229172A/en not_active Expired - Lifetime
-
1962
- 1962-01-25 DE DEJ21203A patent/DE1156156B/de active Pending
- 1962-01-26 CH CH98962A patent/CH406433A/de unknown
- 1962-01-26 GB GB3020/62A patent/GB985656A/en not_active Expired
- 1962-01-29 BE BE613228A patent/BE613228A/fr unknown
- 1962-02-01 DK DK47962AA patent/DK118146B/da unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3229172A (en) | 1966-01-11 |
| BE613228A (fr) | 1962-05-16 |
| CH406433A (de) | 1966-01-31 |
| GB985656A (US06174465-20010116-C00003.png) | 1965-03-10 |
| DK118146B (da) | 1970-07-13 |
| NL274072A (US06174465-20010116-C00003.png) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2556777C2 (de) | Supraleitende Interferometerstruktur mit wenigstens zwei Josephson-Kontakten | |
| DE2832620A1 (de) | Verfahren und vorrichtung zur zerstaeubung von ferromagnetischem material | |
| DE1024119B (de) | Bistabile Gedaechtniseinrichtung mit einem halbleitenden Koerper | |
| DE1789084A1 (de) | Duennschicht-Verknuepfungsglied und Verfahren zu seiner Herstellung | |
| DE2235465C3 (de) | Feldeffekttransistor-Speicherelement | |
| DE1803953A1 (de) | Supraleitfaehiges Sperrelement | |
| DE2215878A1 (de) | Magnetisch steuerbares festkoerperschaltelement | |
| DE1264508B (de) | Magnetisches Schieberegister | |
| DE1156156B (de) | Elektrisches Schaltelement, das den quantenmechanischen Tunneleffekt ausnutzt | |
| DE2055606A1 (de) | Dünnschicht Einkristall Bauelement mit Tunneleffekt | |
| DE2024016A1 (de) | Koplanare Halb leiterschaltvorrichtung | |
| DE2617481C2 (de) | Halleffekt-Bauelement | |
| AT227000B (de) | Elektrisches Schaltelement, das den quantenmechanischen Tunneleffekt ausnutzt | |
| DE1300993B (de) | Elektronisches Duennschichtbauelement | |
| DE1275221B (de) | Verfahren zur Herstellung eines einen Tunneleffekt aufweisenden elektronischen Festkoerperbauelementes | |
| DE1439674C3 (de) | Steuerbares und schaltbares pn-Halbleiterbauelement für große elektrische Leistungen | |
| DE2117801A1 (de) | Josephson-Verbindung und Verfahren zu ihrer Herstellung | |
| DE2216060A1 (de) | Ladungsgekoppelte Baueinheit mit tiefgelegtem Kanal | |
| DE1235374B (de) | Schaltelement zur Durchfuehrung von logischen Funktionen mit supraleitfaehigen Elementen | |
| DE1082624B (de) | Schaltungsanordnung, in welcher der Leitfaehigkeitszustand eines Leiters bei tiefer Temperatur umsteuerbar ist | |
| DE2164684C3 (de) | Ausfallsicherer Josephson-Kontakt und Verfahren zu seiner Herstellung | |
| DE2209979B2 (de) | Halbleiterbauelement | |
| DE1464574B1 (de) | Reversibel in zwei verschiedene elektrische leitfaehigkeits zustaende schaltbares halbleiterbauelement | |
| DE1489198B2 (de) | Variable Kapazitätsdiode | |
| DE1764049A1 (de) | Spannungsbegrenzer zum Betrieb bei tiefen Temperaturen |