DE112015000568A5 - Method for producing textures or polishes on the surface of monocrystalline silicon wafers - Google Patents

Method for producing textures or polishes on the surface of monocrystalline silicon wafers Download PDF

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Publication number
DE112015000568A5
DE112015000568A5 DE112015000568.4T DE112015000568T DE112015000568A5 DE 112015000568 A5 DE112015000568 A5 DE 112015000568A5 DE 112015000568 T DE112015000568 T DE 112015000568T DE 112015000568 A5 DE112015000568 A5 DE 112015000568A5
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DE
Germany
Prior art keywords
polishes
monocrystalline silicon
silicon wafers
textures
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112015000568.4T
Other languages
German (de)
Other versions
DE112015000568B4 (en
Inventor
André Stapf
Christoph Gondek
Marcus Lippold
Edwin Kroke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technische Universitaet Bergakademie Freiberg
Original Assignee
Technische Universitaet Bergakademie Freiberg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of DE112015000568A5 publication Critical patent/DE112015000568A5/en
Application granted granted Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
DE112015000568.4T 2014-01-31 2015-01-22 Process for producing textures or polishes on the surface of monocrystalline silicon wafers and corresponding etching solution Active DE112015000568B4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014001363.4 2014-01-31
DE201410001363 DE102014001363B3 (en) 2014-01-31 2014-01-31 Method for producing textures or polishes on the surface of monocrystalline silicon wafers
PCT/EP2015/051251 WO2015113890A2 (en) 2014-01-31 2015-01-22 Method for producing textures or polishes on the surface of monocrystalline silicon wafers

Publications (2)

Publication Number Publication Date
DE112015000568A5 true DE112015000568A5 (en) 2016-12-08
DE112015000568B4 DE112015000568B4 (en) 2023-01-19

Family

ID=52395073

Family Applications (2)

Application Number Title Priority Date Filing Date
DE201410001363 Active DE102014001363B3 (en) 2014-01-31 2014-01-31 Method for producing textures or polishes on the surface of monocrystalline silicon wafers
DE112015000568.4T Active DE112015000568B4 (en) 2014-01-31 2015-01-22 Process for producing textures or polishes on the surface of monocrystalline silicon wafers and corresponding etching solution

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE201410001363 Active DE102014001363B3 (en) 2014-01-31 2014-01-31 Method for producing textures or polishes on the surface of monocrystalline silicon wafers

Country Status (2)

Country Link
DE (2) DE102014001363B3 (en)
WO (1) WO2015113890A2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104962999A (en) * 2015-07-08 2015-10-07 中国科学院宁波材料技术与工程研究所 Diamond wire cutting-based silicon wafer texturing method, silicon wafer texturing product and silicon wafer texturing pretreatment liquid
CN104962998A (en) * 2015-07-08 2015-10-07 中国科学院宁波材料技术与工程研究所 Diamond wire cutting-based silicon wafer texturing pretreatment method and silicon wafer texturing method
CN105154982A (en) * 2015-07-08 2015-12-16 中国科学院宁波材料技术与工程研究所 Polycrystalline black silicon texturization treatment fluid, polysilicon chip texturization method applying treatment fluid, and polycrystalline black silicon texturization product
DE102016105866B3 (en) 2016-03-31 2017-07-06 Technische Universität Bergakademie Freiberg Silicon wafer, method for patterning a silicon wafer and solar cell
CN106340569A (en) * 2016-09-27 2017-01-18 南昌大学 Pretreatment method of polysilicon film texturing for cutting solar cell by diamond wire saw
DE102017110297A1 (en) 2016-12-30 2018-07-05 RENA Technologies GmbH Method and device for treating an object surface by means of a treatment solution
CN107195705A (en) * 2017-06-16 2017-09-22 苏州阿特斯阳光电力科技有限公司 A kind of preparation method of solar cell
DE102017212442A1 (en) 2017-07-20 2019-01-24 Singulus Technologies Ag A method and apparatus for texturing a surface of a multicrystalline diamond wire sawn silicon substrate using ozone containing medium
CN107275445A (en) * 2017-08-04 2017-10-20 常州天合光能有限公司 A kind of polysilicon solar battery slice isolates technique of doing over again
CN107675263A (en) * 2017-09-15 2018-02-09 东方环晟光伏（江苏）有限公司 The optimization method of monocrystalline silicon pyramid structure matte
CN109326683A (en) * 2018-09-16 2019-02-12 苏州润阳光伏科技有限公司 Monocrystalline silicon wafer alkaline throws cleaning method
CN110098107A (en) * 2019-05-13 2019-08-06 浙江贝盛光伏股份有限公司 A kind of technique for realizing polysilicon printing process exception piece quality qualification
DE102019133386A1 (en) * 2019-12-06 2021-06-10 Hanwha Q Cells Gmbh Method for treating a semiconductor wafer
CN112599634A (en) * 2020-12-03 2021-04-02 江苏日托光伏科技股份有限公司 Solar crystalline silicon cell texturing method, mixed pickling method and mixed pickling liquid medicine
CN113451444B (en) * 2021-06-30 2024-03-01 安徽华晟新能源科技股份有限公司 Method for manufacturing solar cell
DE102022122705A1 (en) 2022-09-07 2024-03-07 Technische Universität Bergakademie Freiberg, Körperschaft des öffentlichen Rechts Process for creating textures, structures or polishes on the surface of silicon

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4325543A1 (en) * 1993-07-29 1995-02-02 Wacker Chemitronic Process and apparatus for the wet chemical treatment of silicon material
DE19962136A1 (en) * 1999-12-22 2001-06-28 Merck Patent Gmbh Etching mixture used in production of structured surfaces on multi-crystalline, tri-crystalline and monocrystalline silicon surfaces of solar cells contains hydrofluoric acid and mineral acids selected from nitric acid
DE102008014166B3 (en) * 2008-03-14 2009-11-26 Rena Gmbh Process for producing a silicon surface with a pyramidal texture
KR101539047B1 (en) 2008-12-24 2015-07-23 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 Photoelectric conversion device and Manufacturing method thereof
DE102009014562A1 (en) * 2009-03-16 2010-09-23 Schmid Silicon Technology Gmbh Purification of metallurgical silicon
US20110079250A1 (en) 2009-10-01 2011-04-07 Mt Systems, Inc. Post-texturing cleaning method for photovoltaic silicon substrates
KR20120015484A (en) * 2010-08-12 2012-02-22 동우 화인켐 주식회사 Texture etching solution compositon and texture etching method of crystalline silicon wafers
DE102011050136A1 (en) * 2010-09-03 2012-03-08 Schott Solar Ag Process for the wet-chemical etching of a silicon layer
US20120295447A1 (en) 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
US20130252427A1 (en) 2012-03-26 2013-09-26 Sunpreme, Ltd. Method for cleaning textured silicon wafers
US20130130508A1 (en) * 2011-09-02 2013-05-23 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
US20130192303A1 (en) * 2012-01-27 2013-08-01 Memc Qualitative crystal defect evaluation method

Also Published As

Publication number Publication date
DE112015000568B4 (en) 2023-01-19
WO2015113890A2 (en) 2015-08-06
DE102014001363B3 (en) 2015-04-09
WO2015113890A3 (en) 2015-11-12

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