CN106340569A - Pretreatment method of polysilicon film texturing for cutting solar cell by diamond wire saw - Google Patents
Pretreatment method of polysilicon film texturing for cutting solar cell by diamond wire saw Download PDFInfo
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- CN106340569A CN106340569A CN201610851356.5A CN201610851356A CN106340569A CN 106340569 A CN106340569 A CN 106340569A CN 201610851356 A CN201610851356 A CN 201610851356A CN 106340569 A CN106340569 A CN 106340569A
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- wire saw
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- wool
- solar cell
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 44
- 239000010432 diamond Substances 0.000 title claims abstract description 44
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 37
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 30
- 238000005520 cutting process Methods 0.000 title abstract description 19
- 238000002203 pretreatment Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims abstract description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 238000010583 slow cooling Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 17
- 239000010703 silicon Substances 0.000 abstract description 17
- 238000012545 processing Methods 0.000 abstract description 2
- 238000011031 large-scale manufacturing process Methods 0.000 abstract 1
- 235000008216 herbs Nutrition 0.000 description 34
- 210000002268 wool Anatomy 0.000 description 33
- 238000005516 engineering process Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 238000005259 measurement Methods 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000001035 drying Methods 0.000 description 10
- 210000004027 cell Anatomy 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 230000003667 anti-reflective effect Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000004570 mortar (masonry) Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 208000031481 Pathologic Constriction Diseases 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 210000001215 vagina Anatomy 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000628997 Flos Species 0.000 description 1
- 206010054949 Metaplasia Diseases 0.000 description 1
- 206010068052 Mosaicism Diseases 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 210000003765 sex chromosome Anatomy 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a pretreatment method of polysilicon film texturing for cutting a solar cell by a diamond wire saw. The method is characterized in that the a diamond wire saw cutting polysilicon silicon is heated to 500 to 1000 DEG C, the temperature is maintained for 0.5 to 6 hours, and then the temperature of the diamond wire saw cutting polysilicon silicon is slowly and naturally reduced to be under 100 DEG C. According to the method, the diamond wire saw cutting polysilicon silicon is suitable for conventional wet method texturing, the average surface light reflection rate is reduced to a level of 20% to 23%, as shown in Table 1; the texturing surface micro morphology is uniform and round and is not distributed along cutting lines, the cutting mark appearance is reduced remarkably, the processing process is simple, the cost is low, and the method is suitable for large-scale production and application.
Description
Technical field
The invention belongs to filed of crystal silicon solaode technique, it is related to the solar cell polysilicon chip of diamond cut
The method that surface antireflective etches making herbs into wool, solves it especially by annealing pretreatment not simultaneous with conventional pickling wet-method etching technology
The method of appearance problem.
Background technology
It is generally wire cooperation abrasive material mortar cutting, abbreviation mortar for the polysilicon chip that polycrystalline silicon solar cell manufactures
Cutting, the commonly used Fluohydric acid. of its surface antireflective making herbs into wool-nitric acid mixed acid solution wet etching method is hereinafter referred to as conventional wet
Method making herbs into wool.It has the advantage of with low cost, producing line equipment and technical maturity, it has also become in polycrystalline silicon solar cell manufacturing industry
Current techique.
Through development in recent years, diamond wire saw cut silicon chip technology tends to ripe, in rate of cutting, cost, quality
On have significant advantage.But its application development on polycrystalline silicon solar cell piece produces faces serious hindrance diamond
The polysilicon chip of saw blade cutting is incompatible with conventional wet lay making herbs into wool technology, cannot get enough anti-reflective effect after making herbs into wool, and
Residual significantly cuts trace.
Have some different making herbs into wool technology at present to can be used to solve the problems, such as the making herbs into wool of diamond wire saw cut polysilicon chip.
For example it is based on the dry method making herbs into wool technology of plasma atmosphere reactive ion etching (being commonly referred to as rie technology in the world), but this technical equipment
Complex and expensive, technique also relies on fluorides special gas raw material, high cost；For another example it is based on nano-noble metal particulate catalytic
Wet etching making herbs into wool technology (be commonly referred to as in the industry the black silicon technology of wet method), but it needs to substitute and updates producing line equipment, process costs
Height, and it is difficult to stable；For another example the gas phase etching making herbs into wool technology (Chinese invention patent based on the effect of mixed acid vapor etch
201410311173.5) with based on the microlayer model etching making herbs into wool technology (Chinese invention patent condensing mixing acid vapour
201510956665.4), but they be required to develop Special Equipment, be related to optional equipment cost.In sum, these sides existing
Method is not directly to solve the compatibling problem of diamond wire saw cut silicon chip and existing conventional wet lay making herbs into wool technology, and need to separately throw
Provide, increase into the existing conventional wet lay making herbs into wool technology of original replacement, and gained suede structure there is also and follow-up solar cell system
Make the adaptation sex chromosome mosaicism of process, generally require the subsequently whole technique of experiment adjustment.Using a kind of processing method of low cost to gold
Hard rock cutting silicon chip surface is modified, and enables to be suitable for conventional wet lay making herbs into wool technology, under existing producing line appointed condition
It is met the antireflective matte of requirement it is clear that being ideal.But still there is no such method at present.
Content of the invention
It is an object of the invention to provide a kind of pretreatment of diamond wire saw cut solar cell polycrystalline silicon texturing
Method, enables to be suitable for conventional wet lay making herbs into wool technology, is met under existing conventional wet lay making herbs into wool producing line appointed condition
The antireflective matte of existing solar cell production requirement.
Realize such purpose it is necessary first to research understands physicochemical property and its routine of diamond cut silicon chip surface
The reason wet-method etching lost efficacy.The gather diamond of substantial amounts of smooth surface of the silicon chip surface that diamond wire saw cut produces is drawn
Trace.Inventor detects through micro analysiss and infers: cut surface layer due to the sharp cutting of diamond and rolls, and has been converted to amorphous
Phase；The fact that inventor is more than silicon crystal by the density of silicon melt further infers that: the above-mentioned diamond point that is in cuts and grinds
The density of the non-crystalline silicon phase being formed under the conditions of pressure is higher than crystalline silicon, thus its etch resistant performance is higher than crystalline silicon, this makes these
Smooth cut surface be difficult in conventional wet lay making herbs into wool formed suede structure required for pit, and only between cut or draw
The fragility avalanche region that trace interrupts forms pit.This is the reason diamond wire saw cut silicon chip conventional wet lay making herbs into wool was lost efficacy.Sand
Then gather this fragility caved area completely, so it can be suitable for conventional wet lay making herbs into wool on slurry cutting polysilicon chip surface.Fig. 1,2
Display Main Analysis foundation.
Based on above-mentioned analysis detection and deduction, the present invention proposes to make diamond cut surface amorphous phase layer by annealing
There is crystallization change, so that diamond wire saw cut polysilicon chip is become able to and conventional wet lay making herbs into wool technical compatibility.This method
Obtain it is experimentally confirmed that seeing Fig. 3.
A kind of preprocess method of diamond wire saw cut solar cell polycrystalline silicon texturing of the present invention it is simply that
Make diamond wire saw cut polysilicon chip surface amorphous phase layer crystalization modified thus being suitable for conventional wet lay system by annealing process
The method of floss.
Described annealing refers to for diamond wire saw cut polysilicon chip to be heated to 500～1000 ° of c temperature, and insulation 0.5 ~ 6 is little
When, then natural slow cooling is come out of the stove to 100 ° of below c.
Atmosphere residing for diamond wire saw cut polysilicon chip in processing procedure of the present invention can be air, vacuum, nitrogen, argon
Gas, hydrogen, or the mixed gas of nitrogen or argon and hydrogen.
After the present invention is processed in the atmosphere of oxidisability, the subsequent wet making herbs into wool time needs proper extension to move back to remove this atmosphere
The oxide-film that during fire, silicon chip surface is formed.
Diamond wire saw cut silicon chip can be made to be suitable for conventional wet lay making herbs into wool for annealing of the present invention so as to average table
Face luminous reflectance is reduced to 20～23% levels, as shown in table 1；Matte microscopic appearance is uniform, rounding, disobeys cutting stricture of vagina distribution, such as
Shown in Fig. 3, trace stricture of vagina is apparent is obviously reduced for cutting in appearance；Its technical process is simple, with low cost, is suitable for scale metaplasia
Produce application.
Brief description
Fig. 1 is collected diamond wire saw cut silicon chip sawdust powder (diamond-cut saw dust) and separation and Extraction
Mortar cut silicon chip sawdust powder (slurry-cut saw dust) x-ray diffraction spectrum (xrd spectrum).Show that the former lacks lattice
Sunken degree is larger, and comprises amorphous phase, and diffraction maximum is weak and wide, and the latter's lattice structure is complete, no amorphous phase, diffraction peak intensity and point
Sharp.A small amount of sic abrasive powder is remained, its diffraction maximum is also visible in mortar cutting silicon sawdust powder sample.
Fig. 2 is that (laser co-focusing shows for diamond wire saw cut polysilicon chip surface microstructure through conventional wet-method etching
Micro mirror photo).Show its surface diamond scored area relative smooth, pit is very shallow, only juncture area is formed between cut
Pit, its shape majority not rounding, and tend to along cutting trace stricture of vagina arrangement.
Fig. 3 is to carry out the diamond fretsaw after conventional wet lay making herbs into wool again after annealing of the present invention (embodiment 1)
Cutting polysilicon chip surface microstructure (laser confocal microscope photo).Show that the densely covered size and shape in its surface is more equal
Nicely rounded whole pit.
Specific embodiment
With reference to embodiment, the present invention is described in further detail.
Embodiment 1.
Diamond wire saw cut polysilicon chip sample in the air in box Muffle furnace is heated to 950 ° of c and is incubated 1 hour,
Subsequently power-off, is cooled to 100 ° of below c with stove and comes out of the stove.This sample is etched under the conditions of conventional wet lay making herbs into wool 4 minutes, diluted alkaline molten
Liquid rinsing, pure water rinsing, drying, then carry out surface light reflection rate measurement.
Embodiment 2.
Diamond wire saw cut polysilicon chip sample in the air in box Muffle furnace is heated to 800 ° of c and is incubated 1 hour,
Subsequently power-off, is cooled to 100 ° of below c with stove and comes out of the stove.This sample is etched under the conditions of conventional wet lay making herbs into wool 2.5 minutes, diluted alkaline
Solution rinsing, pure water rinsing, drying, then carry out surface light reflection rate measurement.
Embodiment 3.
Diamond wire saw cut polysilicon chip sample in the air in box Muffle furnace is heated to 700 ° of c and is incubated 2 hours,
Subsequently power-off, is cooled to 100 ° of below c with stove and comes out of the stove.This sample is etched under the conditions of conventional wet lay making herbs into wool 1.5 minutes, diluted alkaline
Solution rinsing, pure water rinsing, drying, then carry out surface light reflection rate measurement.
Embodiment 4.
Diamond wire saw cut polysilicon chip sample in the air in box Muffle furnace is heated to 600 ° of c and is incubated 3 hours,
Subsequently power-off, is cooled to 100 ° of below c with stove and comes out of the stove.This sample is etched under the conditions of conventional wet lay making herbs into wool 1 minute, diluted alkaline molten
Liquid rinsing, pure water rinsing, drying, then carry out surface light reflection rate measurement.
Embodiment 5.
Diamond wire saw cut polysilicon chip sample in the air in box Muffle furnace is heated to 500 ° of c and is incubated 6 hours,
Subsequently power-off, is cooled to 100 ° of below c with stove and comes out of the stove.This sample is etched under the conditions of conventional wet lay making herbs into wool 1 minute, diluted alkaline molten
Liquid rinsing, pure water rinsing, drying, then carry out surface light reflection rate measurement.
Embodiment 6.
By diamond wire saw cut polysilicon chip sample 6 x 10 in vacuum drying oven-3Pa heated under vacuum is to 1000 °
C is incubated 0.5 hour, and subsequent power-off is cooled to 100 ° of below c with stove and comes out of the stove.This sample is carved under the conditions of conventional wet lay making herbs into wool
Erosion 2 minutes, dilute alkaline soln rinsing, pure water rinsing, drying, then carry out surface light reflection rate measurement.
Embodiment 7.
Diamond wire saw cut polysilicon chip sample is heated to 1000 ° of c insulations 0.5 in high-purity argon in Sealing furnace little
When, subsequent power-off, it is cooled to 100 ° of below c with stove and come out of the stove.This sample is etched under the conditions of conventional wet lay making herbs into wool 1 minute, dilute
Aqueous slkali rinsing, pure water rinsing, drying, then carry out surface light reflection rate measurement.
Embodiment 8.
Diamond wire saw cut polysilicon chip sample is heated to 1000 ° of c insulations 0.5 in High Purity Nitrogen in Sealing furnace little
When, subsequent power-off, it is cooled to 100 ° of below c with stove and come out of the stove.This sample is etched under the conditions of conventional wet lay making herbs into wool 1 minute, dilute
Aqueous slkali rinsing, pure water rinsing, drying, then carry out surface light reflection rate measurement..
Embodiment 9.
Diamond wire saw cut polysilicon chip sample is heated to 1000 ° of c insulations 0.5 in High Purity Hydrogen in Sealing furnace little
When, subsequent power-off, it is cooled to 100 ° of below c with stove and come out of the stove.This sample is etched under the conditions of conventional wet lay making herbs into wool 50 seconds, diluted alkaline
Solution rinsing, pure water rinsing, drying, then carry out surface light reflection rate measurement.
Embodiment 10.
Diamond wire saw cut polysilicon chip sample is added in 96 High Purity Nitrogens and 4% high-purity hydrogen mixed gas in Sealing furnace
Heat is incubated 0.5 hour to 1000 ° of c, and subsequent power-off is cooled to 100 ° of below c with stove and comes out of the stove.By this sample in conventional wet lay making herbs into wool
Under the conditions of etching 50 seconds, dilute alkaline soln rinsing, pure water rinsing, dry, then carry out surface light reflection rate measurement.
Embodiment 11.
Diamond wire saw cut polysilicon chip sample is heated to 950 ° of c in High Purity Nitrogen in Sealing furnace and is incubated 1 hour, with
Power-off afterwards, is cooled to 100 ° of below c with stove and comes out of the stove.This sample is etched under the conditions of conventional wet lay making herbs into wool 1 minute, dilute alkaline soln
Rinsing, pure water rinsing, drying, then carry out surface light reflection rate measurement.
Table 1 be diamond wire saw cut polysilicon chip initial surface luminous reflectance and through the inventive method process after with routine
Surface light reflection rate (being weighed with the meansigma methodss of the reflectance of 400～900 nanometer wavelength range light) after wet-method etching.
Table 1
Claims (2)
1. a kind of preprocess method of diamond wire saw cut solar cell polycrystalline silicon texturing, is characterized in that diamond wire
Saw cut polysilicon chip is heated to 500～1000 ° of c temperature, is incubated 0.5 ~ 6 hour, and then natural slow cooling is to 100 ° of below c
Come out of the stove.
2. preprocess method according to claim 1, is characterized in that atmosphere residing for diamond wire saw cut polysilicon chip is
Air, vacuum, nitrogen, argon, hydrogen, or the mixed gas of nitrogen or argon and hydrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610851356.5A CN106340569A (en) | 2016-09-27 | 2016-09-27 | Pretreatment method of polysilicon film texturing for cutting solar cell by diamond wire saw |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610851356.5A CN106340569A (en) | 2016-09-27 | 2016-09-27 | Pretreatment method of polysilicon film texturing for cutting solar cell by diamond wire saw |
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| CN106340569A true CN106340569A (en) | 2017-01-18 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166798A (en) * | 2018-08-02 | 2019-01-08 | 南昌大学 | A kind of surface phase transformation processing method of diamond wire saw cut silicon wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015113890A2 (en) * | 2014-01-31 | 2015-08-06 | Technische Universität Bergakademie Freiberg | Method for producing textures or polishes on the surface of monocrystalline silicon wafers |
| CN104962999A (en) * | 2015-07-08 | 2015-10-07 | 中国科学院宁波材料技术与工程研究所 | Diamond wire cutting-based silicon wafer texturing method, silicon wafer texturing product and silicon wafer texturing pretreatment liquid |
| CN105679882A (en) * | 2016-03-29 | 2016-06-15 | 盐城阿特斯协鑫阳光电力科技有限公司 | Method of etching polycrystalline silicon sheet cut by diamond wire |
-
2016
- 2016-09-27 CN CN201610851356.5A patent/CN106340569A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015113890A2 (en) * | 2014-01-31 | 2015-08-06 | Technische Universität Bergakademie Freiberg | Method for producing textures or polishes on the surface of monocrystalline silicon wafers |
| CN104962999A (en) * | 2015-07-08 | 2015-10-07 | 中国科学院宁波材料技术与工程研究所 | Diamond wire cutting-based silicon wafer texturing method, silicon wafer texturing product and silicon wafer texturing pretreatment liquid |
| CN105679882A (en) * | 2016-03-29 | 2016-06-15 | 盐城阿特斯协鑫阳光电力科技有限公司 | Method of etching polycrystalline silicon sheet cut by diamond wire |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166798A (en) * | 2018-08-02 | 2019-01-08 | 南昌大学 | A kind of surface phase transformation processing method of diamond wire saw cut silicon wafer |
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Application publication date: 20170118 |