CN110098107A - A kind of technique for realizing polysilicon printing process exception piece quality qualification - Google Patents
A kind of technique for realizing polysilicon printing process exception piece quality qualification Download PDFInfo
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- CN110098107A CN110098107A CN201910393408.2A CN201910393408A CN110098107A CN 110098107 A CN110098107 A CN 110098107A CN 201910393408 A CN201910393408 A CN 201910393408A CN 110098107 A CN110098107 A CN 110098107A
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000007639 printing Methods 0.000 title claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 14
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 13
- 238000012797 qualification Methods 0.000 title claims description 11
- 238000005245 sintering Methods 0.000 claims abstract description 45
- 230000002159 abnormal effect Effects 0.000 claims abstract description 29
- 238000004140 cleaning Methods 0.000 claims abstract description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 2
- 239000002002 slurry Substances 0.000 abstract description 7
- 238000012545 processing Methods 0.000 abstract description 6
- 230000005587 bubbling Effects 0.000 description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000001035 drying Methods 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 239000004332 silver Substances 0.000 description 11
- 239000000571 coke Substances 0.000 description 9
- 238000007599 discharging Methods 0.000 description 9
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000428 dust Substances 0.000 description 5
- 239000004744 fabric Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 241000243321 Cnidaria Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- SJWPTBFNZAZFSH-UHFFFAOYSA-N pmpp Chemical compound C1CCSC2=NC=NC3=C2N=CN3CCCN2C(=O)N(C)C(=O)C1=C2 SJWPTBFNZAZFSH-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Power Engineering (AREA)
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Abstract
It is disclosed by the invention provide it is a kind of for restoring the technique of polysilicon printing process exception piece quality, comprising the following steps: abnormal piece to be cleaned is through HCl, H2O2Mixed liquor cleaning；It is pre-sintered, temperature is 80-200 DEG C；Sintering, temperature is 485-695 DEG C, compared with prior art, abnormal piece is done independent processing by the present invention, adjust cleaning process, the slurry that cell piece surface has been printed and other dirty removals are thorough, due to handling abnormal the piece number meeting wear surface PN junction, if phenomena such as burn-through it will cause local PN, therefore combining novel sintered technique with former sintering process, reduce the temperature for being sintered each area, the efficiency of obtained abnormal piece and normal piece are close, and appearance, efficiency reach A product standard, improve abnormal piece quality.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of realization polysilicon printing process exception piece quality
Qualified technique.
Background technique
Polycrystalline silicon solar cell piece will appear a certain proportion of abnormal piece, abnormal piece surface in printing process manufacturing process
There are following several situations: positive back face printing pattern lacks, and cell piece can print main grid, the pair of regulation shape under normal circumstances
Grid, backplane, back electric field, but have that figure is incomplete to be happened in actual production, it will affect open-circuit voltage, short circuit current
Equal unit for electrical property parameters, to influence efficiency；Positive back face printing graph position mistake, positive back face printing figure has in actual production
Off-set phenomenon, thus will affect appearance, lead to electric leakage, efficiency decline, influence encapsulation etc.；It is extraneous dirty, it is had in actual production
Personnel, board etc. contact silicon wafer, if there is dirty residual will affect appearance, lead to electric leakage, efficiency decline etc..
Silicon single crystal rod is cut into slices, about 0.3 millimeter of general piece thickness.Silicon wafer is made to be processed by processes such as rubbing down, cleanings
Raw material silicon wafer.Process solar battery sheet, first have to the doping and diffusion on silicon wafer, general dopant be micro boron, phosphorus,
Antimony etc..Diffusion is carried out in the high temperature dispersing furnace made of quartz ampoule.P > N knot is thus formed on silicon wafer.Then silk screen is used
Print process, the silver paste that essence prepares, which is imprinted on silicon wafer, is made into grid line, through oversintering, while back electrode is made, and in the face for having grid line
Antireflective source is coated, is reflected away to prevent a large amount of photon by smooth silicon chip surface.Therefore, the monomer of monocrystaline silicon solar cell
Piece is just made.
In the prior art, the part piece subprocessing is often relatively simple, roughly, for example is only wiped with terpinol, alcohol
It wipes, but the operation does not simply fail to completely remove that surface is dirty and metal impurities, but will destroy surface suede structure and PN junction structure,
The problems such as bad, efficiency reduces, and EL is abnormal so as to cause sintering.
Summary of the invention
To solve the above problems, the present invention provides a kind of technique for realizing polysilicon printing process exception piece quality qualification,
Abnormal piece is individually handled, keeps the efficiency of abnormal piece and normal piece close, appearance, efficiency reach A product standard.
The technical solution that the present invention solves is to provide a kind of work for realizing polysilicon printing process exception piece quality qualification
Skill, which comprises the following steps:
(1) abnormal piece to be cleaned is through HCl, H2O2Mixed liquor cleaning；
(2) it is pre-sintered, temperature is 80-200 DEG C；
(3) it is sintered, peak temperature is 700-770 DEG C；
It preferably, further include Gas Stirring, N in the step (1)2Bubbling amount is 1-4m3/ H, spillway discharge 50-60 L/min.
Preferably, HCL concentration 40-60%, H in the step (2)2O2Concentration 20-30%.
Preferably, it before implementation steps (2), repeats implementation steps (1).
Preferably, the number of repetition is 2 times.
Preferably, sintering region is divided into the area 1-6 in the step (3).
Preferably, in the area 1-6, the area 1-3 temperature range is 485-600 DEG C, and the area 4-6 temperature range is 600-770
℃；
Former processing method is that direct sintering is carried out after being wiped with terpinol, alcohol, and former processing method efficiency is lower, EL hair
It is black, there are leakage point of electricity, analyze causes open-circuit voltage lower for surface is dirty, and surface Ohmic contact is poor, and edge is by excess metal
Slurry is connected and causes to fail, and after new cleaning process, the surface EL is dirty to be completely removed, and unit for electrical property parameters restores substantially
Normally, but series resistance parallel resistance still has exception；EL picture is observed, there are cloud exception, analyzing its origin cause of formation is on surface
The damage of local PN junction causes to be sintered bad, therefore is also required to improve subsequent sintering process, commonsense method is with terpinol, alcohol
Direct sintering after wiping, such metal impurities residual is more, goes indivisible to will cause quality bad.Excessive wiping is easy
Surface film structure is destroyed, bad order piece is caused.
In the present solution, HF and nitric acid can not effectively remove the Ag on surface, metallic pollution is caused, cause efficiency relatively low or even is reported
It is useless, and pass through HCL/H2O2It is completely removed metallic contaminants from surface, HF and nitric acid can remove original diffusion layer, surface caused to be burnt
It ties bad, or restarts the processes such as making herbs into wool.And the thickness of silicon wafer can be thinned, influence efficiency and increase fragment rate, and pass through
HCL/H2O2Influence to surface PN junction is minimum, and will not thickness thinning, HCL can effectively remove cell piece processing when it is remaining
The foreign metals such as Ag, AL, increasing hydrogen peroxide is to enhance the knot of chloride ion and metal by verifying oxidable most of metal impurities
Close effect.The collocation of this mixed liquor simultaneously will not destroy or the diffusion layer of little damage silicon chip surface, and will not generate other
Impurity.
The purpose of sintering is exactly that the electrode being printed on silicon wafer is sintered into cell piece at high temperature, finally makes electrode and silicon
Piece itself forms Ohmic contact, to improve 2 key factor parameters of open-circuit voltage and fill factor of cell piece, makes electrode
Contact has resistance characteristic, achievees the purpose that the high transfer efficient cell piece of production, specific steps are as follows: the upper and lower electrode that will be printed
It passes in sintering furnace with the silicon wafer of back surface field by the conveyer belt of net printing machine, has come by drying coke discharging, sintering and cooling procedure
The Ohmic contact of upper/lower electrode and cell piece is finally reached at sintering process, wherein drying coke discharging, sintering, cooling be divided into three temperature
The warm area committee baking zone of coke discharging is dried in area, is that organic solvent is made to be detached from slurry, sintering process is to silicon wafer table after third road silk-screen
Starch adhesive material is dried；It is sintered to sintering warm area, heating reaches eutectic temperature, incorporates silicon materials, and removing in slurry has matter
Bonding agent；It is cooled to cooling warm area, makes electrode, back surface field that can form good Ohmic contact, reduces string resistance, realizes Al-BSF and coral
Line is sintered, and in each warm area, peak temperature determines the concentration of metallic atom in silico-aluminum in sintering process, if peak value temperature
Degree setting is excessively high, then front electrode can be made to burn, and declines series resistance and fill factor, efficiency reduces, and the present invention is to warm area
It is specifically divided again, and reduces the sintering temperature in each area, by new cleaning process and new sintering process cell piece efficiency
It is improved largely, and EL is partially bright, and without obvious problem, in the present solution, sintering is exactly mainly to reduce sintering temperature, in mainstream temperature
Decline 30-50 degree on the basis of degree.Mainstream pre-sintering temperature (as drying temperature) is 200-300, is sintered 500 degree of the area a 1-3 left side
Peak temperature can be respectively set in the right side, 4th area, about 650,5,6 areas, and mainstream is that 6th area are peak value, i.e. 5th area are about that 700,6 areas are about 770.
But it is peak temperature that 5th area, which can be set, i.e. 5th area are about that 770,6 areas are about 700.
Compared with prior art, abnormal piece is done independent processing by the present invention, adjusts cleaning process, by cell piece surface institute
The slurry of printing, the removal of dirty especially metal impurities thoroughly, to improve the transfer efficiency of cell piece, are reduced because of surface impurity
And lead to the ratio of quality abnormal, due to the meeting wear surface PN junction when processing, wiping abnormal piece, if with former sintering process,
It will cause phenomena such as local PN is burnt, so as to cause cell piece quality abnormal, efficiency is reduced, by combining novel sintered work
Skill, sintering are exactly mainly to reduce sintering temperature, decline 30-50 degree on the basis of mainstream temperature, reduce the temperature for being sintered each area,
The efficiency of obtained abnormal piece and normal piece are close, and appearance, efficiency reach A product standard, improve abnormal piece quality.
Detailed description of the invention
Fig. 1 is the EL cell piece shooting figure of former processing method；
Fig. 2 is the EL cell piece shooting figure after this programme cleaning process；
Fig. 3 is the EL cell piece shooting figure after this programme cleaning process and new sintering process.
Specific embodiment
Following is a specific embodiment of the present invention in conjunction with the accompanying drawings, technical scheme of the present invention will be further described,
However, the present invention is not limited to these examples.
Embodiment 1
Unified collect prints abnormal piece；Terpinol is picked by front side silver paste, back side silver paste, aluminium paste and other dirty wipings with dust-free paper
It goes, and is wiped one by one along four side of cell piece；Non-dust cloth is impregnated with absolute alcohol carefully to wipe cell piece front and back sides and four sides, until
Without obvious dirty；The abnormal piece handled well is passed in sintering furnace by the conveyer belt of net printing machine, 250 DEG C are pre-sintered 60 seconds,
Organic solvent present in last one of silk-screen printing is evaporated, 500 DEG C of 40 seconds burn-up organic solvents and resin, moment rise to high temperature
700 DEG C are sintered for 20 seconds, incorporate silicon materials.
Sintering process is completed by drying coke discharging, sintering and cooling and drying coke discharging, drying coke discharging sintering and cooling procedure
It is finally reached the Ohmic contact of upper/lower electrode and cell piece.
After processing, photo verification the verifying results are shot, see Fig. 1.
Embodiment 2
Unified collect prints abnormal piece；Terpinol is picked by front side silver paste, back side silver paste, aluminium paste and other dirty wipings with dust-free paper
It goes, and is wiped one by one along four side of cell piece；Non-dust cloth is impregnated with absolute alcohol carefully to wipe cell piece front and back sides and four sides, until
Without obvious dirty；The abnormal piece handled well is passed in sintering furnace by the conveyer belt of net printing machine, 300 DEG C are pre-sintered 60 seconds,
Organic solvent present in last one of silk-screen printing is evaporated, 600 DEG C of 40 seconds burn-up organic solvents and resin, moment rise to high temperature
850 DEG C are sintered for 20 seconds, incorporate silicon materials.
Sintering process is completed by drying coke discharging, sintering and cooling and drying coke discharging, drying coke discharging sintering and cooling procedure
It is finally reached the Ohmic contact of upper/lower electrode and cell piece.
Embodiment 3
Unified collect prints abnormal piece；
Just wipe: with dust-free paper pick terpinol by front side silver paste, back side silver paste, aluminium paste and other it is dirty wipe, and along cell piece
Four sides wipe one by one；
Essence is wiped: being impregnated non-dust cloth with absolute alcohol and is carefully wiped cell piece front and back sides and four sides, until without obvious dirty；
It is unified to collect wiper blade, it leads blue to the gaily decorated basket；
Primary cleaning: piece is put into pure water, N is passed through2It is bubbled, and opens pure water overflow, bubbling amount, spillway discharge are big by groove body
It is small to set, by taking 400L groove body as an example, bubbling amount 1m3/ H, spillway discharge 50L/min are cleaned 10 minutes, 30 DEG C of water temperature；
It once removes metal: piece is put into HCL/H2O2HCL concentration 40%, H in solution2O2Concentration 20% is cleaned 60 minutes, is passed through
N2It being bubbled, bubbling amount, spillway discharge are set by groove body size, by taking 400L groove body as an example, bubbling amount 3m3/ H, 20 DEG C of temperature；
Secondary cleaning: piece is put into pure water, is passed through N2It is bubbled, and opens pure water overflow, bubbling amount, spillway discharge are big by groove body
It is small to set, by taking 400L groove body as an example, bubbling amount 3m3/ H, spillway discharge 60L/min are cleaned 10 minutes, 40 DEG C of water temperature；
It is secondary to remove metal: piece is put into HCL/H2O2In solution, HCL concentration 40%, H2O2Concentration 20-30% is cleaned 60 minutes, is led to
Enter N2It being bubbled, bubbling amount, spillway discharge are set by groove body size, by taking 400L groove body as an example, bubbling amount 3m3/ H, 30 DEG C of temperature；
It cleans three times: piece being put into pure water, N is passed through2It is bubbled, and opens pure water overflow, bubbling amount, spillway discharge are big by groove body
It is small to set, by taking 400L groove body as an example, bubbling amount 3m3/ H, spillway discharge 60L/min are cleaned 10 minutes, 40 DEG C of water temperature；
Slow lifting dehydration: piece is slowly put into pure water, is cleaned 3 minutes, is then slowly risen and carry away, decline, the rate of climb
0.5cm/s, 70 DEG C of water temperature；
To 80 DEG C, gas flow is set by groove body size for drying, heated compressed air, by taking 400L groove body as an example, bubbling amount
5m3/ H is dried 10 minutes；
Cell piece normally prints front and back sides figure after cleaning；
Due to handle abnormal the piece number can wear surface PN junction, if it will cause local PN to be burnt etc. now with former sintering process
As the purpose for improving abnormal piece quality is still to reach, therefore design novel sintered technique, and feature is to reduce the temperature for being sintered each area.
It is pre-sintered the area 1-3, i.e. baking zone, the main volatilization for completing organic principle in slurry, 150 DEG C are pre-sintered 60 seconds；
It is sintered the area 1-3, i.e., mainly completes back surface field and positive sintering, the Ohmic contact of sial, sintering condition is 485 degree of sintering 40
Second；
The sintering area 4-6 incorporates silicon materials, and temperature is higher；695 degree of 4th area is sintered to be sintered 6 seconds；It is sintered 690 degree of 5th area to be sintered 6 seconds, burn
685 degree of 6th area of knot is sintered 6 seconds.
Embodiment 4
Unified collect prints abnormal piece；
Just wipe: with dust-free paper pick terpinol by front side silver paste, back side silver paste, aluminium paste and other it is dirty wipe, and along cell piece
Four sides wipe one by one；
Essence is wiped: being impregnated non-dust cloth with absolute alcohol and is carefully wiped cell piece front and back sides and four sides, until without obvious dirty；
It is unified to collect wiper blade, it leads blue to the gaily decorated basket；
Primary cleaning: piece is put into pure water, N is passed through2It is bubbled, and opens pure water overflow, bubbling amount, spillway discharge are big by groove body
It is small to set, by taking 400L groove body as an example, bubbling amount 2m3/ H, spillway discharge 50L/min are cleaned 10 minutes, 40 DEG C of water temperature；
It once removes metal: piece is put into HCL/H2O2HCL concentration 60%, H in solution2O2Concentration 30% is cleaned 60 minutes, is passed through
N2It being bubbled, bubbling amount, spillway discharge are set by groove body size, by taking 400L groove body as an example, bubbling amount 4m3/ H, 30 DEG C of temperature；
Secondary cleaning: piece is put into pure water, is passed through N2It is bubbled, and opens pure water overflow, bubbling amount, spillway discharge are big by groove body
It is small to set, by taking 400L groove body as an example, bubbling amount 4m3/ H, spillway discharge 60L/min are cleaned 10 minutes, 50 DEG C of water temperature；
It is secondary to remove metal: piece is put into HCL/H2O2In solution, HCL concentration 60%, H2O2Concentration 30% is cleaned 60 minutes, is passed through
N2It being bubbled, bubbling amount, spillway discharge are set by groove body size, by taking 400L groove body as an example, bubbling amount 4m3/ H, 40 DEG C of temperature；
It cleans three times: piece being put into pure water, N is passed through2It is bubbled, and opens pure water overflow, bubbling amount, spillway discharge are big by groove body
It is small to set, by taking 400L groove body as an example, bubbling amount 4m3/ H, spillway discharge 60L/min are cleaned 10 minutes, 50 DEG C of water temperature；
Slow lifting dehydration: piece is slowly put into pure water, is cleaned 3 minutes, is then slowly risen and carry away, decline, the rate of climb
0.5cm/s, 80 DEG C of water temperature；
To 80 DEG C, gas flow is set by groove body size for drying, heated compressed air, by taking 400L groove body as an example, bubbling amount
5m3/ H is dried 10 minutes；
Cell piece normally prints front and back sides figure after cleaning；
Due to handle abnormal the piece number can wear surface PN junction, if it will cause local PN to be burnt etc. now with former sintering process
As the purpose for improving abnormal piece quality is still to reach, therefore design novel sintered technique, and feature is to reduce the temperature for being sintered each area.
It is pre-sintered the area 1-3, i.e. baking zone, the main volatilization for completing organic principle in slurry, 185 DEG C are pre-sintered 60 seconds；
It is sintered the area 1-3, i.e., mainly completes back surface field and positive sintering, the Ohmic contact of sial, sintering condition is 485 degree of sintering 30
Second；
The sintering area 4-6 incorporates silicon materials, and temperature is higher；695 degree of 4th area is sintered to be sintered 6 seconds；It is sintered 690 degree of 5th area to be sintered 6 seconds, burn
685 degree of 6th area of knot is sintered 6 seconds.
Fig. 3 is the EL cell piece shooting figure after this programme cleaning process and new sintering process.
Embodiment 5
Unified collect prints abnormal piece；
Just wipe: with dust-free paper pick terpinol by front side silver paste, back side silver paste, aluminium paste and other it is dirty wipe, and along cell piece
Four sides wipe one by one；
Essence is wiped: being impregnated non-dust cloth with absolute alcohol and is carefully wiped cell piece front and back sides and four sides, until without obvious dirty；
It is unified to collect wiper blade, it leads blue to the gaily decorated basket；
Primary cleaning: piece is put into pure water, N is passed through2It is bubbled, and opens pure water overflow, bubbling amount, spillway discharge are big by groove body
It is small to set, by taking 400L groove body as an example, bubbling amount 2m3/ H, spillway discharge 50L/min are cleaned 10 minutes, 40 DEG C of water temperature；
It once removes metal: piece is put into HCL/H2O2HCL concentration 60%, H in solution2O2Concentration 30% is cleaned 60 minutes, is passed through
N2It being bubbled, bubbling amount, spillway discharge are set by groove body size, by taking 400L groove body as an example, bubbling amount 4m3/ H, 30 DEG C of temperature；
Secondary cleaning: piece is put into pure water, is passed through N2It is bubbled, and opens pure water overflow, bubbling amount, spillway discharge are big by groove body
It is small to set, by taking 400L groove body as an example, bubbling amount 4m3/ H, spillway discharge 60L/min are cleaned 10 minutes, 50 DEG C of water temperature；
It is secondary to remove metal: piece is put into HCL/H2O2In solution, HCL concentration 60%, H2O2Concentration 30% is cleaned 60 minutes, is passed through
N2It being bubbled, bubbling amount, spillway discharge are set by groove body size, by taking 400L groove body as an example, bubbling amount 4m3/ H, 40 DEG C of temperature；
It cleans three times: piece being put into pure water, N is passed through2It is bubbled, and opens pure water overflow, bubbling amount, spillway discharge are big by groove body
It is small to set, by taking 400L groove body as an example, bubbling amount 4m3/ H, spillway discharge 60L/min are cleaned 10 minutes, 50 DEG C of water temperature；
Slow lifting dehydration: piece is slowly put into pure water, is cleaned 3 minutes, is then slowly risen and carry away, decline, the rate of climb
0.5cm/s, 80 DEG C of water temperature；
To 80 DEG C, gas flow is set by groove body size for drying, heated compressed air, by taking 400L groove body as an example, bubbling amount
5m3/ H is dried 10 minutes；
Cell piece normally prints front and back sides figure after cleaning；
After processing, photo verification the verifying results are shot, see Fig. 2, design parameter effect is shown in Table 1:
In table 1, Quanity is experiment sample quantity, and subsequent is unit for electrical property parameters, for institute after test machine test experiments sample
The average value obtained, EFF is transfer efficiency, and Isc is short circuit current, and Uoc is open-circuit voltage, and FF is fill factor, and Rs is series electrical
Resistance, Rsh is parallel resistance, and Pmpp is maximum service rating, and Impp is maximum operating currenbt, and Umpp is maximum working voltage.
It is not directed to place above, is suitable for the prior art.
Specific embodiment described herein is only an example for the spirit of the invention.The neck of technology belonging to the present invention
The technical staff in domain can make various modifications or additions to the described embodiments or replace by a similar method
In generation, however, it does not deviate from the spirit of the invention or beyond the scope of the appended claims.
Claims (7)
1. a kind of technique for realizing polysilicon printing process exception piece quality qualification, which comprises the following steps:
Abnormal piece to be cleaned is through HCl, H2O2Mixed liquor cleaning；
It is pre-sintered, temperature is 80-200 DEG C；
Sintering, temperature are 700-770 DEG C.
2. a kind of technique for realizing polysilicon printing process exception piece quality qualification according to claim 1, feature exist
In further including Gas Stirring, N in the step (1)2Bubbling amount is 1-4m3/ H, spillway discharge 50-60 L/min.
3. a kind of technique for realizing polysilicon printing process exception piece quality qualification according to claim 1, feature exist
In HCL concentration 40-60%, H in the step (2)2O2Concentration 20-30%.
4. a kind of technique for realizing polysilicon printing process exception piece quality qualification according to claim 1, feature exist
In, before implementation steps (2), repetition implementation steps (1).
5. a kind of technique for realizing polysilicon printing process exception piece quality qualification according to claim 4, feature exist
In the number of repetition is 2 times.
6. a kind of technique for realizing polysilicon printing process exception piece quality qualification according to claim 1, feature exist
In sintering region is divided into the area 1-6 in the step (3).
7. a kind of technique for realizing polysilicon printing process exception piece quality qualification according to claim 6, feature exist
In in the area 1-6, the area 1-3 temperature range is 485-600 DEG C, and the area 4-6 temperature range is 600-770 DEG C.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113257661A (en) * | 2021-04-14 | 2021-08-13 | 中环领先半导体材料有限公司 | Method for improving rinsing effect of 8-inch abrasive washing FO tank |
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| CN109616551A (en) * | 2018-11-19 | 2019-04-12 | 横店集团东磁股份有限公司 | A kind of bad cell piece rework preocess of polycrystalline surface organic matter |
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Application publication date: 20190806 |