DE112008002242A5 - Verfahren und Anordnung zum redundanten Anoden-Sputtern mit einer Dual-Anoden-Anordnung - Google Patents

Verfahren und Anordnung zum redundanten Anoden-Sputtern mit einer Dual-Anoden-Anordnung Download PDF

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Publication number
DE112008002242A5
DE112008002242A5 DE112008002242T DE112008002242T DE112008002242A5 DE 112008002242 A5 DE112008002242 A5 DE 112008002242A5 DE 112008002242 T DE112008002242 T DE 112008002242T DE 112008002242 T DE112008002242 T DE 112008002242T DE 112008002242 A5 DE112008002242 A5 DE 112008002242A5
Authority
DE
Germany
Prior art keywords
arrangement
anode
dual
redundant
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112008002242T
Other languages
English (en)
Other versions
DE112008002242B4 (de
Inventor
Götz Teschner
Enno Mirring
Johannes Dr. Strümpfel
Andreas Heisig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Von Ardenne Asset GmbH and Co KG
Original Assignee
Von Ardenne Anlagentechnik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Von Ardenne Anlagentechnik GmbH filed Critical Von Ardenne Anlagentechnik GmbH
Publication of DE112008002242A5 publication Critical patent/DE112008002242A5/de
Application granted granted Critical
Publication of DE112008002242B4 publication Critical patent/DE112008002242B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
DE112008002242.9T 2007-09-25 2008-09-25 Verfahren und Anordnung zum redundanten Anoden-Sputtern mit einer Dual-Anoden-Anordnung Expired - Fee Related DE112008002242B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007045863 2007-09-25
DE102007045863.2 2007-09-25
PCT/EP2008/062881 WO2009040406A2 (de) 2007-09-25 2008-09-25 Verfahren und anordnung zum redundanten anoden-sputtern mit einer dual-anoden-anordnung

Publications (2)

Publication Number Publication Date
DE112008002242A5 true DE112008002242A5 (de) 2010-08-26
DE112008002242B4 DE112008002242B4 (de) 2016-01-14

Family

ID=40260843

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112008002242.9T Expired - Fee Related DE112008002242B4 (de) 2007-09-25 2008-09-25 Verfahren und Anordnung zum redundanten Anoden-Sputtern mit einer Dual-Anoden-Anordnung

Country Status (5)

Country Link
US (1) US8980072B2 (de)
CH (1) CH700002B1 (de)
DE (1) DE112008002242B4 (de)
PL (1) PL217715B1 (de)
WO (1) WO2009040406A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010047963A1 (de) 2010-10-08 2012-04-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Magnetron-Vorrichtung und Verfahren zum gepulsten Betreiben einer Magnetron-Vorrichtung
US9595424B2 (en) * 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
US11049702B2 (en) 2015-04-27 2021-06-29 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
US9812305B2 (en) 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
US10373811B2 (en) 2015-07-24 2019-08-06 Aes Global Holdings, Pte. Ltd Systems and methods for single magnetron sputtering
DE102016116762B4 (de) 2016-09-07 2021-11-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Abscheiden einer Schicht mittels einer Magnetronsputtereinrichtung

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4042289A1 (de) * 1990-12-31 1992-07-02 Leybold Ag Verfahren und vorrichtung zum reaktiven beschichten eines substrats
DE4233720C2 (de) * 1992-10-07 2001-05-17 Leybold Ag Einrichtung für die Verhinderung von Überschlägen in Vakuum-Zerstäubungsanlagen
US5427669A (en) * 1992-12-30 1995-06-27 Advanced Energy Industries, Inc. Thin film DC plasma processing system
DE4438463C1 (de) 1994-10-27 1996-02-15 Fraunhofer Ges Forschung Verfahren und Schaltung zur bipolaren pulsförmigen Energieeinspeisung in Niederdruckplasmen
US5917286A (en) * 1996-05-08 1999-06-29 Advanced Energy Industries, Inc. Pulsed direct current power supply configurations for generating plasmas
DE19702187C2 (de) 1997-01-23 2002-06-27 Fraunhofer Ges Forschung Verfahren und Einrichtung zum Betreiben von Magnetronentladungen
SE9704607D0 (sv) * 1997-12-09 1997-12-09 Chemfilt R & D Ab A method and apparatus for magnetically enhanced sputtering
US5897753A (en) * 1997-05-28 1999-04-27 Advanced Energy Industries, Inc. Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages
DE19949394A1 (de) * 1999-10-13 2001-04-19 Balzers Process Systems Gmbh Elektrische Versorgungseinheit und Verfahren zur Reduktion der Funkenbildung beim Sputtern
JP3635538B2 (ja) * 2002-07-05 2005-04-06 株式会社京三製作所 プラズマ発生用直流電源装置
SG193877A1 (en) * 2005-03-24 2013-10-30 Oerlikon Trading Ag Hard material layer
DE112006003188B4 (de) * 2005-11-04 2013-12-24 Von Ardenne Anlagentechnik Gmbh Verfahren und Anordnung zum Redundanten Anoden-Sputtern
US7517437B2 (en) * 2006-03-29 2009-04-14 Applied Materials, Inc. RF powered target for increasing deposition uniformity in sputtering systems

Also Published As

Publication number Publication date
PL391856A1 (pl) 2011-02-28
WO2009040406A2 (de) 2009-04-02
WO2009040406A3 (de) 2009-06-04
PL217715B1 (pl) 2014-08-29
DE112008002242B4 (de) 2016-01-14
CH700002B1 (de) 2013-03-15
US20100230275A1 (en) 2010-09-16
US8980072B2 (en) 2015-03-17

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R016 Response to examination communication
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Representative=s name: PATENTANWAELTE LIPPERT, STACHOW & PARTNER, DE

R081 Change of applicant/patentee

Owner name: VON ARDENNE GMBH, DE

Free format text: FORMER OWNER: VON ARDENNE ANLAGENTECHNIK GMBH, 01324 DRESDEN, DE

Effective date: 20140918

Owner name: VON ARDENNE ASSET GMBH & CO. KG, DE

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Effective date: 20140918

R016 Response to examination communication
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R018 Grant decision by examination section/examining division
R020 Patent grant now final
R082 Change of representative
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Owner name: VON ARDENNE ASSET GMBH & CO. KG, DE

Free format text: FORMER OWNER: VON ARDENNE GMBH, 01324 DRESDEN, DE

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee