DE112004001156D2 - Photodetektor und verfahren zu seiner herstellung - Google Patents

Photodetektor und verfahren zu seiner herstellung

Info

Publication number
DE112004001156D2
DE112004001156D2 DE112004001156T DE112004001156T DE112004001156D2 DE 112004001156 D2 DE112004001156 D2 DE 112004001156D2 DE 112004001156 T DE112004001156 T DE 112004001156T DE 112004001156 T DE112004001156 T DE 112004001156T DE 112004001156 D2 DE112004001156 D2 DE 112004001156D2
Authority
DE
Germany
Prior art keywords
photodetektor
und verfahren
seiner herstellung
seiner
herstellung
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112004001156T
Other languages
English (en)
Other versions
DE112004001156B4 (de
Inventor
Martin Mikulics
Michel Marso
Peter Kordos
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Publication of DE112004001156D2 publication Critical patent/DE112004001156D2/de
Application granted granted Critical
Publication of DE112004001156B4 publication Critical patent/DE112004001156B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
DE112004001156T 2003-07-24 2004-06-19 Verfahren zur Herstellung eines Photodetektors Expired - Fee Related DE112004001156B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE2003133669 DE10333669A1 (de) 2003-07-24 2003-07-24 Photodetektor und Verfahren zu seiner Herstellung
DE10333669.9 2003-07-24
PCT/DE2004/001295 WO2005011003A1 (de) 2003-07-24 2004-06-19 Photodetektor und verfahren zu seiner herstellung

Publications (2)

Publication Number Publication Date
DE112004001156D2 true DE112004001156D2 (en) 2006-03-23
DE112004001156B4 DE112004001156B4 (de) 2009-01-08

Family

ID=34088787

Family Applications (2)

Application Number Title Priority Date Filing Date
DE2003133669 Withdrawn DE10333669A1 (de) 2003-07-24 2003-07-24 Photodetektor und Verfahren zu seiner Herstellung
DE112004001156T Expired - Fee Related DE112004001156B4 (de) 2003-07-24 2004-06-19 Verfahren zur Herstellung eines Photodetektors

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE2003133669 Withdrawn DE10333669A1 (de) 2003-07-24 2003-07-24 Photodetektor und Verfahren zu seiner Herstellung

Country Status (2)

Country Link
DE (2) DE10333669A1 (de)
WO (1) WO2005011003A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107546283B (zh) * 2017-08-29 2019-03-19 重庆大学 掩埋式电极的GaN紫外光电探测传感器及其应用电路模块

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6194382A (ja) * 1984-10-09 1986-05-13 ゼロツクス　コーポレーシヨン ２端子薄膜光検知器
US4998154A (en) * 1990-01-18 1991-03-05 Northern Telecom Limited MSM photodetector with superlattice
GB9322246D0 (en) * 1993-10-28 1993-12-15 Hitachi Europ Ltd Improved metal-semiconductor-metal photodetector
DE19621965A1 (de) * 1996-05-31 1997-12-04 Forschungszentrum Juelich Gmbh Photodetektor und Verfahren zu seiner Herstellung
DE19846063A1 (de) * 1998-10-07 2000-04-20 Forschungszentrum Juelich Gmbh Verfahren zur Herstellung eines Double-Gate MOSFETs
DE19900879A1 (de) * 1999-01-12 2000-08-17 Forschungszentrum Juelich Gmbh Optischer Detektor mit einer Filterschicht aus porösem Silizium und Herstellungsverfahren dazu

Also Published As

Publication number Publication date
DE10333669A1 (de) 2005-03-03
WO2005011003A1 (de) 2005-02-03
DE112004001156B4 (de) 2009-01-08

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