DE10342768A1 - Semiconductor chip for chip stack provided with active side and rear side with integral spacer element - Google Patents

Semiconductor chip for chip stack provided with active side and rear side with integral spacer element Download PDF

Info

Publication number
DE10342768A1
DE10342768A1 DE10342768A DE10342768A DE10342768A1 DE 10342768 A1 DE10342768 A1 DE 10342768A1 DE 10342768 A DE10342768 A DE 10342768A DE 10342768 A DE10342768 A DE 10342768A DE 10342768 A1 DE10342768 A1 DE 10342768A1
Authority
DE
Germany
Prior art keywords
semiconductor chip
spacer element
rear side
chip
integral spacer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10342768A
Other languages
German (de)
Inventor
Karl-Heinz Priewasser
Sylvia Winter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Disco Hi Tec Europe GmbH
Original Assignee
Infineon Technologies AG
Disco Hi Tec Europe GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG, Disco Hi Tec Europe GmbH filed Critical Infineon Technologies AG
Priority to DE10342768A priority Critical patent/DE10342768A1/en
Publication of DE10342768A1 publication Critical patent/DE10342768A1/en
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/94Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Die Bonding (AREA)

Abstract

The semiconductor chip has a base body (1) provided with an active side (2) and a rear side having an integral spacer element (3), which is set inwards from the peripheral edge (4) of the semiconductor chip. An independent claim for a manufacturing method for semiconductor chips is also included.
DE10342768A 2003-09-16 2003-09-16 Semiconductor chip for chip stack provided with active side and rear side with integral spacer element Ceased DE10342768A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE10342768A DE10342768A1 (en) 2003-09-16 2003-09-16 Semiconductor chip for chip stack provided with active side and rear side with integral spacer element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10342768A DE10342768A1 (en) 2003-09-16 2003-09-16 Semiconductor chip for chip stack provided with active side and rear side with integral spacer element

Publications (1)

Publication Number Publication Date
DE10342768A1 true DE10342768A1 (en) 2005-04-21

Family

ID=34352865

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10342768A Ceased DE10342768A1 (en) 2003-09-16 2003-09-16 Semiconductor chip for chip stack provided with active side and rear side with integral spacer element

Country Status (1)

Country Link
DE (1) DE10342768A1 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091355A (en) * 1998-09-10 2000-03-31 Sanyo Electric Co Ltd Manufacture of semiconductor device
US20020096754A1 (en) * 2001-01-24 2002-07-25 Chen Wen Chuan Stacked structure of integrated circuits
US20020096755A1 (en) * 2001-01-24 2002-07-25 Yasuki Fukui Semiconductor device
US20020160025A1 (en) * 2000-01-18 2002-10-31 Marina Mustapic Cosmetic preparations for skin and hair care
US20030062613A1 (en) * 2001-09-13 2003-04-03 Kenji Masumoto Semiconductor device and manufacturing method thereof
WO2003060006A1 (en) * 2002-01-14 2003-07-24 Crompton Corporation Composition of pvc and carbon monoxide-modified ethylene-vinyl ester copolymer with improved colour stability

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091355A (en) * 1998-09-10 2000-03-31 Sanyo Electric Co Ltd Manufacture of semiconductor device
US20020160025A1 (en) * 2000-01-18 2002-10-31 Marina Mustapic Cosmetic preparations for skin and hair care
US20020096754A1 (en) * 2001-01-24 2002-07-25 Chen Wen Chuan Stacked structure of integrated circuits
US20020096755A1 (en) * 2001-01-24 2002-07-25 Yasuki Fukui Semiconductor device
US20030062613A1 (en) * 2001-09-13 2003-04-03 Kenji Masumoto Semiconductor device and manufacturing method thereof
WO2003060006A1 (en) * 2002-01-14 2003-07-24 Crompton Corporation Composition of pvc and carbon monoxide-modified ethylene-vinyl ester copolymer with improved colour stability

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8131 Rejection