DE10252060B4 - A radiation-emitting semiconductor component and method for producing a plurality of semiconductor layers - Google Patents

Abstract

Radiation-emitting semiconductor component
- with a substrate (1) on which a mask layer (3) containing one or more openings (4) is arranged,
With a semiconductor layer (5) deposited on the substrate (1) in the region of an opening (4) and on the mask layer (3),
In which the part of the mask layer (3) lying between the semiconductor layer (5) and the substrate (1) has only a single opening (4), and
- In which the mask layer (3) comprises a layer sequence of individual layers (31, 32, 33), wherein at least one single layer (31, 33) titanium and wherein at least one further single layer (32) contains aluminum.

Description

The The invention relates to a radiation-emitting semiconductor component containing a substrate and a semiconductor layer. Further concerns the invention a method for producing a plurality of semiconductor layers.

Especially The invention relates to an epitaxial manufacturing process for semiconductor layers, wherein by lateral growth of a semiconductor material on a Substrate semiconductor layers are formed.

One Such method is often called LEO (Lateral Epitaxial Overgrowth) or ELOG (Epitaxial Lateral Overgrowth) method and is, for example, from Song et al., phys. stat. sol. (a) 180, P. 247 (2000). This is the production of a gallium nitride layer described on a sapphire substrate. On the sapphire substrate becomes first a thin one Initial layer (seed layer) and then a strip-shaped silicon nitride mask layer applied. In the subsequent deposition of trimethylgallium and ammonia is growing first a plurality of gallium nitride layers between the mask stripes on. Once the gallium nitride layers the thickness of the mask layer have reached, in addition to the vertical growth, a lateral Growth on, so that the mask layer from the gallium nitride layers overgrown laterally becomes. This process will continued until a closed gallium nitride layer is formed.

It has been shown that the Dislocation density in the gallium nitride layer produced by lateral overgrowth is advantageously low and especially against one the sapphire substrate directly grown through a layer higher crystal quality distinguished.

Farther is generally known that epitaxial Growth at an elevated level Temperature, for example, in the order of 1000 ° C takes place. After the epitaxy process becomes usually the substrate with the epitaxial layers grown thereon on one for further processing appropriate temperature and finally cooled to ambient temperature. It can different thermal expansion coefficients of substrate and. Semiconductor layer to thermally induced mechanical stresses to lead, being the risk of damage the semiconductor layer, for example by cracks, consists. Around To reduce danger is one possible good adaptation of the thermal expansion coefficient between Semiconductor layer and substrate required.

at Nitride compound semiconductors is the number of suitable as a substrate Materials comparatively low, said thermal Adaptation only conditionally possible is. As a result, on the one hand, the maximum achievable layer thickness the semiconductor layer limited and on the other hand the yield crack-free grown semiconductor layers and consequently also the yield reduced with it manufacturable semiconductor devices.

When Material for The substrate may be considered in particular sapphire, spinel or also silicon carbide. While in the material sapphire, the thermal matching between the semiconductor layer and The substrate still works relatively well, which is why growing on sapphire of nitride compound semiconductors of sufficient thickness is possible, can on the substrate silicon carbide only very thin layers of nitride compound semiconductors with a maximum layer thickness of 3 to 4 microns are epitaxially crack-free. There with the help of nitride compound semiconductors the production of optoelectronic components, in particular Semiconductor lasers is intended, and because these components depending on the individual case developing a high thermal power dissipation is the material Sapphire because of its poor thermal conductivity only very conditionally for the production of power laser diodes suitable. The use of silicon carbide as a substrate has the advantage of good thermal conductivity.

Around To reduce the defect density must be special Procedures such as ELOG be used. However arise Very high in these processes with coalescing ELOG layers Layer thicknesses (about 3-10 microns), so that it on SiC comes to cracking and therefore no optoelectronic Components can be produced in a sufficient quality.

From the publication EP 0874405 A2 Furthermore, it is known to use the semiconductor layers just described for the production of optoelectronic components, in which case semiconductor layers are used which have an electrical contact to the substrate at many points due to the underlying multiple strip-shaped mask layer and which also have a relatively large area cover the substrate. Such components have the disadvantage that they can be produced case by case with sufficient yield, but then only on substrates such as sapphire, which, however, are disadvantageous in terms of thermal conductivity. On substrates such as silicon carbide, which would be preferable in terms of thermal properties, the known devices can be produced only with a very poor yield because of the risk of cracking in the semiconductor layers.

The Document WO 01/27980 A1 describes a process for the preparation a GaN-based semiconductor structure using a a mask formed on a growth substrate.

The publication DE 197 15 572 A1 describes a method for producing epitaxial layers of a compound semiconductor on monocrystalline silicon and light-emitting diodes produced therefrom.

The Document US 2002/0145150 A1 describes a light-emitting Semiconductor device and a method for producing such a device using a mask.

The publication DE 199 53 609 A1 describes the thickness matching of wafer-bonded Al _x Ga _y In _z N structures by laser melting.

It Object of the present invention, a radiation-emitting Specify semiconductor device with a high yield can be produced. It is about it In addition, an object of the present invention is a process for the preparation of semiconductor layers to be used for the production of the radiation-emitting Semiconductor devices are suitable.

The objects are achieved by a radiation-emitting semiconductor component according to claim 1 and by a method for producing semiconductor layers according to claim 11 , Advantageous developments of the semiconductor component or the method are the subject of the dependent claims.

It is a radiation-emitting semiconductor device indicated with a substrate on which a mask layer is arranged. The mask layer contains one or more openings. Furthermore, a semiconductor layer is provided, which is deposited on the substrate in the region of an opening and on the mask layer. The lying between the semiconductor layer and the substrate portion of the mask layer in this case has only a single opening. The mask layer further contains a layer sequence of individual layers, wherein at least one individual layer comprises titanium and at least one further individual layer ( 32 ) Contains aluminum.

The Semiconductor device has the advantage that it with high yield crack-free is to produce. This advantage results from the fact that the semiconductor layer only a very small area of the substrate, namely only the area of the substrate, in the area of a single opening the mask layer lies, covered.

Here flows the consideration with that the semiconductor layer in so far as little cracks can be made than the area of the Semiconductor layer is limited such that thermomechanical stresses, as they cool after the newly grown semiconductor layer arise in the semiconductor layer partially degraded. In the case of the semiconductor component, the Semiconductor layer on a very small area of the substrate is limited the thermo-mechanical stresses partly or even completely break down, so that the Risk of cracking is reduced.

In addition, a method for producing a multiplicity of semiconductor layers is specified, wherein a substrate is provided in a first step. In a subsequent step, a mask layer is applied to the substrate. A mask layer is applied which has a plurality of openings. Thereafter, a semiconductor material is grown on the substrate and on portions of the mask layer adjacent to the openings. In this case, portions of the mask layer are overgrown laterally by the semiconductor material. The openings of the mask layer are spaced apart from one another such that semiconductor layers belonging to adjacent openings are laterally spaced apart by a gap. The mask layer contains a layer sequence of individual layers, wherein at least one single layer of titanium and at least one further individual layer ( 32 ) Contains aluminum.

By doing the method specified here deviates from the known ELOG method so performed will that the laterally on the mask layer growing areas of the semiconductor layer between two openings can not grow together, on a single substrate a variety individual semiconductor layers are produced, each of which only a single opening the associated mask layer portion to the substrate and which are therefore well suited to to produce the semiconductor device specified here. By on a growing together of the individual in each opening of the Mask layer grown on semiconductor layers is omitted, manages to do the usual in the ELOG process produced semiconductor layer, which contiguous multiple openings covered in the mask layer, into individual semiconductor layers so that each individual semiconductor layer only a very small area covered on the substrate, causing thermomechanical stresses optimal at the edges can degrade the individual semiconductor layers, whereby the risk of Formation of cracks in the individual semiconductor layers greatly reduced becomes.

Apart from the fact that in the method described here, a merging of Moreover, in a preferred embodiment of the method, the method steps according to the known ELOG method can be used, which are known for example from the publications EP 0874405 A2 such as EP 0942459 A1 The contents of the two publications are expressly incorporated by reference.

there characterized by lateral growth of a section of the Mask layer grown part of the semiconductor layer by a particularly low dislocation density, resulting in the production of radiation-emitting Semiconductor devices is advantageous.

at In an advantageous embodiment of the method, the mask layer applied in two steps. In a first step, a closed mask layer deposited. The following is the mask layer structured in a second step, wherein in particular said openings be formed in the mask layer. As a mask material can For example, in the first step, a closed silica or silicon nitride layer are formed. Also metallic mask layers, which may contain nickel, for example, are for the process suitable. The structuring can be done by means of a conventional photolithographic Procedure done.

A advantageous development of the method is in front of the Forming the mask layer on an initial layer (seed layer) grow up the substrate. Preferably, this is a material the subsequent growth of the semiconductor layer, a material from the same semiconductor system or a material that at least partially the components of the semiconductor layer to be applied subsequently contains used.

The Method is particularly suitable for the production of a semiconductor layer, which contains a nitride compound semiconductor. Under a nitride compound semiconductor are in particular special nitride compounds of elements of the third and / or fifth Main group of the Periodic Table of the chemical elements such as GaN, InN, AlN, InGaN, AlGaN or AlInGaN. As a substrate For example, a silicon carbide or a sapphire substrate is suitable. As an initial layer in this case is preferably also a Layer of a nitride compound semiconductor used.

With a semiconductor layer produced by the method preferably manufactured electronic semiconductor devices. Nitride compound semiconductor layers are particularly suitable for optoelectronic, for example radiation-emitting components. In such devices, usually as a light emitting diode, For example, in the form of a light emitting diode or laser diode, are formed, an active radiation-generating layer is provided, the GaN, InGaN, AlGaN or AlInGaN. This active layer can within the above-described overgrown semiconductor layer formed or preferably grown on this semiconductor layer be. Such device structures may also include other semiconductor layers, For example waveguide, quantum well, cladding and / or contact layers include.

There in the case of the semiconductor component specified here, the contact surface of the Semiconductor layer to the substrate is greatly reduced, it is advantageous when the mask layer is electrically conductive. In this case can namely the entire area the semiconductor layer can be used for electrical contacting, which has the advantage of low current densities and thus less strong Material stress during operation of the in the semiconductor layer located optoelectronic component has the consequence. In general the mask layer should consist of a material that is substantially no crystal growth of the growing semiconductor layer allowed. Only in this case is guaranteed that growth of the semiconductor material in the region of the mask layer substantially takes place laterally.

In an embodiment of the semiconductor device, the mask layer as a contact material suitable material for the adjacent layer, for example titanium, contain.

In all embodiments of the semiconductor device the mask layer is a layer sequence of individual layers. In the Layer sequence is present at least one single layer, the titanium contains. At least one further single layer contains aluminum. In this manner and manner can advantageously a layer sequence of titanium and aluminum-containing layers for the Mask layer can be used. The advantage of a titanium-aluminum layer sequence is that aluminum is a very good n-contact material to n-GaN. However, since aluminum In contrast to titanium, it has poor adhesion to n-GaN, which is why titanium is used as a bonding agent for the aluminum.

Of Further, a semiconductor device is advantageous in which the substrate a good thermal conductivity having. Such a substrate has the advantage that the at Operation of the semiconductor device resulting heat loss good can be derived, whereby the thermal capacity of the semiconductor device in an advantageous manner increases.

It is also advantageous to use as a substrate a material, that silicon carbide contains or even fabricate the substrate from pure silicon carbide. silicon carbide has the advantage that it is epitaxial Growth of nitride compound semiconductors, possibly using an initial layer, allowed. In addition, has silicon carbide the advantage of that electrically conductive is, whereby a vertical contacting of the semiconductor device is possible.

The vertical contacting of the semiconductor device has the advantage that the for reasons of space often difficult attachment of two contacts on the surface of the Semiconductor layer can be avoided. For vertical contacting that is only a single contact on top of the semiconductor layer needed. The other contact for contacting the semiconductor device is of the substrate underside ago introduced, where by the electric conductivity the substrate and the semiconductor layer itself sufficient contact is ensured.

silicon carbide has the further advantage that it has a good thermal conductivity having.

In an embodiment of the semiconductor device is a first electrical contact the top of the semiconductor layer is provided. A second electrical Contact is provided on the bottom of the substrate. To this Way succeeds the advantageous realization of a vertical contact of the component. For the case that the Mask layer consists of an electrically conductive material is additionally still the contact area supplied from the bottom of the substrate ago, which is too advantageous reduced current densities during operation of the device leads.

In another embodiment of the device is on the top of the semiconductor layer provided first electrical contact. A second electrical Contact is on the part of the surface free of the semiconductor layer Mask layer provided. This embodiment of the device is particularly advantageous if the mask layer electrically conductive is. Then you can by the electrical contact applied to the mask layer a lateral contacting of the device take place. It has one in this case the additional one Advantage that the Not both contacts on the relatively small-area semiconductor layer brought up Need to become, what the effort for the processing, in particular for the masking and structuring the contacts reduced in an advantageous manner. So too the price for reduces the production of the device. Sideways, so on the of the semiconductor layer free part of the surface of the mask layer is sufficient space for the attachment of another electrical contact with the relative low structuring effort can be applied.

In an embodiment of the device contains the semiconductor layer is an active one suitable for emitting light Zone. Such an active zone is required, for example, for the realization of Laser diodes.

The Method for producing a plurality of semiconductor layers can in one embodiment be designed so that the openings the mask layer form the form of parallel stripes. These embodiment of the method has the advantage that the usual in the ELOG processes results of strip-shaped Semiconductor layers can be achieved.

It is advantageous if the openings of the Mask layer have a width between 5 and 20 microns. The opening must be there have a minimum width, otherwise a reasonable Growth of the semiconductor material can not take place. on the other hand should the opening as narrow as possible be that over there the opening grown semiconductor material has a high density of defects and thus for the formation of semiconductor devices of the desired here Kind is not suitable.

It is also advantageous, the distance between the individual openings to choose so that he between 100 and 200 μm is.

One Distance of this magnitude facilitates semiconductor layers with one for the production of optoelectronic Building components necessary minimum layer thickness, without that the There is a risk that neighboring Growing semiconductor layers in the course of the process.

Furthermore it is advantageous, the method for producing the semiconductor layers continue so that after the production of multiple semiconductor layers on a single Substrate of this substrate is divided into individual parts, wherein each part of the substrate corresponds to a semiconductor layer. this will achieved by the Subdivision of the substrate along the column is performed which separate the individual semiconductor layers from each other. Thereby manages the production in a particularly advantageous manner a variety of semiconductor devices, the yield is very is high, since the type of formation of cracks is greatly reduced is.

In the following the invention is based on Embodiments and the associated figures explained in more detail.

1 shows by way of example a substrate during the implementation of the method for producing semiconductor layers in a perspective view.

2 shows the substrate 1 at a later stage of the procedure.

3 shows an example of the formation of the mask layer.

4 shows by way of example a semiconductor device in a schematic cross section.

5 shows by way of example a further semiconductor component in a schematic cross section.

1 shows a substrate 1 on which an initial layer 2 which shows the difference in lattice constants between the III-V nitride semiconductor layer to be grown and the substrate 1 reduced. As such buffer layer, for example, a ZnO layer, an MgO layer or a III-V nitride semiconductor layer (AlN, GaN, AlGaN, InGaN) which has not been produced by the method described herein are suitable. In principle, however, the method described here can also be carried out without the need for such a buffer layer with the desired result.

Preferably, the III-V nitride semiconductor layer is grown on the substrate by organometallic-chemical vapor phase epitaxy (MOVPE). In the present context, the term III-V nitride semiconductors includes the materials derived from GaN or materials related to GaN and, for example, ternary or quaternary mixed crystals based thereon. In particular, these include the materials AlN, InN, AlGaN (Al _1-x Ga _x N, 0 ≦ x ≦ 1), InGaN (In _1-X Ga _x N, 0 ≦ _x ≦ 1), InAlN (In _1-x Al _x N, 0 ≤ x ≤ 1) and AlInGaN (Al _1-xy In _x Ga _y N, 0 ≤ x ≤ 1, 0 ≤ y ≤ 1).

in the Next, the term "III-V nitride semiconductor" refers to the group described above of materials. Furthermore included These designation materials used to form buffer layers in the epitaxial production of layers of the listed material systems be used.

On the substrate 1 or on the initial layer 2 on the substrate 1 then becomes a mask layer first 3 applied. Preferably, the mask layer is 3 strip-shaped ausgebil det. Alternatively, however, grid structures and the like are possible.

As shown in the cross section of the figure, serves as a basis for the epitaxially grown semiconductor layer 5 a substrate 1 of a non-III-V nitride semiconductor-based material, which preferably has a lower coefficient of thermal expansion than the growing III-V nitride semiconductor material. As a substrate 1 For example, silicon carbide (SiC) is used, but for example, sapphire substrates, ZnS substrates, GaAs substrates, spinel (MgAl ₂ O ₄ ) substrates, or Si substrates may also be used.

On the initial layer 2 is the mask layer 3 applied. It is characterized by strip-shaped, mutually parallel openings 4 divided into parallel stripes.

The width B of the strips is about 0.5 to 1000 microns, more preferably about 100 to 400 microns; and the layer thickness D of the mask layer 3 is about 0.01 to 5 microns, preferably 0.1 to 3 microns.

The material of the mask layer 3 is selected such that growth of a III-V nitride semiconductor layer thereon is prevented or at least greatly restricted, so that the epitaxial growth of the III-V nitride semiconductor layer 5 only from the non-masked areas of the substrate 1 emanates. Suitable materials for the mask layer 3 are oxides and nitrides such as silicon oxide (SiO _x ), silicon nitride (Si _x N _y ), titanium oxide (TiO _x ) and zirconium oxide (ZrO _x ) in a multi-layered structure with these components. The mask layer 3 must also be for the growth of the semiconductor layer 5 required temperatures of over 600 ° C can withstand. Mask layers are therefore particularly preferred 3 with SiO ₂ , SiN _x and SiO _1-x N _x . The mask layer 3 is deposited by conventional techniques such as vapor deposition, sputtering, or CVD techniques, followed by free etching of the desired non-masked areas.

Subsequently, it is applied to the mask layer 3 provided substrate 1 a GaN semiconductor layer epitaxially grown. In the context of the present exemplary embodiment, a GaN semiconductor is understood to be a semiconductor material having the formula In _x Ga _y Al _z N, where 0 ≦ x <1, 0 <y ≦ 1, 0 ≦ z <1 and x + y + z = 1 applies.

2 shows how to after the substrate 1 Semiconductor material is grown. The growth begins in each case at the openings 4 on the of mask layer 3 free surface of the initial layer 2 , Optionally, the initial layer 2 also be omitted. As far as it is mentioned here that semiconductor material on the substrate 1 growing up is both direct growing up of semiconductor material on the substrate 1 as well as the growth of semiconductor material on one possibly on the substrate 1 located initial layer 2 meant.

2 also shows the dimensions of the openings 4 as well as their distances. The width b of the openings 4 is preferably ≦ 20 microns to the largest possible area ratio of defect-poor zone in the semiconductor layer 5 (This is in the section above the mask layer 3 ) to the defect-enriched surface of the semiconductor layer 5 (This is located directly above the openings 4 ) to achieve. The thickness of the semiconductor layer 5 is preferably 2 to 20 microns. At the aforementioned width b of the openings 4 and the desired layer thickness of the semiconductor layer 5 a growing together of the individual semiconductor layers 5 To prevent, it is advantageous to the distance d between the individual openings 4 between 100 and 400 μm. The distance d in each case from the center of an opening 4 measured.

The GaN semiconductor layer can be grown by any method grown by GaN semiconductor layers. Suitable techniques For example, organometallic chemical vapor phase epitaxy (MOVPE), Molecular Beam Epitaxy (MBE), the halide chemical Gas phase epitaxy (HVPE) or a combination of these known Method. While that MOVPE method for thinner ones Semiconductor layers is preferable, the HVPE is more suitable for thicker ones Semiconductor layers. Since these methods are already well known are on a more detailed description of the same at this Job waived.

3 shows an embodiment for the mask layer 3 , It consists of three individual layers 31 . 32 . 33 , where the individual layers 31 . 33 made of titanium and the single layer 32 made of aluminum.

4 shows a semiconductor device as a laser diode, wherein within the semiconductor layer 5 an active zone 51 is arranged. This active zone is obtained 51 by growing the semiconductor material InGaAlN, wherein the material portions in the vertical direction to the substrate 1 vary. Subsequently, the semiconductor layer 5 except for the in 4 visible mesa etched, leaving an active zone 51 which cover only a partial area of the semiconductor layer 5 extends, remains.

The device according to 4 is after in the 1 to 3 produced method produced. The semiconductor layer 5 is from a passivation 6 covered. As Passivie tion 6 For example, the materials silicon oxide or silicon nitride into consideration. Only at the top of the mesa is the passivation 6 interrupted to a first electrical contact 7 the opportunity to contact the semiconductor layer 5 to give. In this case, the first electrical contact is the p-contact of the laser diode. The second electrical contact 8th is in the embodiment after 4 on the bottom of the substrate 1 applied. The substrate 1 consists of silicon carbide. The second electrical contact may be, for example, a sputtered aluminum or gold layer. Through on opposite sides of the substrate 1 arranged contacts 7 . 8th will be in the example 4 realized a vertical contacting of the device, which is particularly easy to manufacture and inexpensive to produce.

The top contact is made by placing the device (patterned by wet or dry etching) with a passivation layer, e.g. As SiO ₂ , is coated. Thereafter, the passivation layer is removed at the point at which the upper contact is to be applied later with a photolithography and subsequent wet or dry etching step. Subsequently, the application of the upper metal contact by a standard standard method (sputtering, vapor deposition).

Out 4 also shows that it is particularly advantageous, the mask layer 3 to form an electrically conductive material, since in this case the electrical contact from the bottom not on the opening 4 is limited, but over the entire bottom of the semiconductor layer 5 can be done. As a result, the current density is reduced, which is advantageous. This also makes it easier to operate the device in a current range of 100 A / cm ² to 30 kA / cm ² .

5 shows a further component according to the device of 4 is made, with the difference that the second electrical contact 8th not on the bottom of the substrate 1 but on the of the semiconductor layer 5 free part of the mask layer 3 in the form of a sputtered by a standard method or deposited metal layer is applied. In the example below 5 it is imperative that the mask layer 3 is electrically conductive, otherwise a contact with the second electrical contact 8th would not be possible.

It will be noted at this point that the lateral overgrowth of the mask layer 3 a minimum layer thickness for the semiconductor layer 5 requires. The minimum layer thickness is also predetermined by the requirements of the laser diodes.

In order to obtain a lateral growth and to realize a laser diode, it is neces sary derlich to perform the semiconductor layer with a thickness between 2 and 20 microns.

The method according to the present invention may also be combined with the conventional ELOG processing techniques. In the EP 0 874 405 A2 For example, it is proposed to initially apply a first mask layer to a substrate and to grow a first GaN semiconductor layer over it. This first GaN semiconductor layer then serves as a base on which a second mask layer, which is arranged offset to the first mask layer, and then the actual GaN semiconductor layer is applied. This further reduces the number of dislocations still present in the first grown semiconductor layer. In this case, it is conceivable, for example, to apply the second mask layer and the second GaN semiconductor layer by means of the method described here.

Finally, it will pointed out that the not described here component and the method described on in the embodiments limited materials is limited, Rather, all suitable materials and especially the in the general part of the description mentioned materials into consideration.

Claims (20)

Radiation-emitting semiconductor device - with a substrate ( 1 ) on which a mask layer ( 3 ) containing one or more openings ( 4 ), with a semiconductor layer ( 5 ), which are on the substrate ( 1 ) in the region of an opening ( 4 ) and on the mask layer ( 3 ) is deposited, - in which the between the semiconductor layer ( 5 ) and the substrate ( 1 ) lying part of the mask layer ( 3 ) only a single opening ( 4 ), and - in which the mask layer ( 3 ) a layer sequence of individual layers ( 31 . 32 . 33 ), wherein at least one single layer ( 31 . 33 ) Titanium and wherein at least one further single layer ( 32 ) Contains aluminum. Component according to Claim 1, in which the mask layer ( 3 ) is electrically conductive. Component according to one of Claims 1 or 2, in which the substrate ( 1 ) has a good thermal conductivity. Component according to one of Claims 1 to 3, in which the substrate ( 1 ) Contains silicon carbide. Component according to one of Claims 1 to 4, in which a first electrical contact ( 7 ) on top of the semiconductor layer ( 5 ) and a second electrical contact ( 8th ) on the underside of the substrate ( 1 ) is provided. Component according to one of Claims 1 to 5, in which a first electrical contact ( 7 ) on top of the semiconductor layer ( 5 ) and in which a second electrical contact ( 8th ) on the of the semiconductor layer ( 5 ) free part of the surface of the mask layer ( 3 ) is provided. Component according to one of Claims 1 to 6, in which the semiconductor layer ( 5 ) contains a nitride compound semiconductor. Component according to Claim 7, in which the semiconductor layer ( 5 ) contains a nitride compound of elements of the third and fifth main groups. Component according to one of Claims 1 to 8, in which the semiconductor layer ( 5 ) Gallium nitride, aluminum nitride, indium nitride, indium gallium nitride, aluminum gallium nitride or aluminum indium gallium nitride. Component according to one of Claims 1 to 9, in which the semiconductor layer ( 5 ) an active zone suitable for emission of light ( 51 ) contains. Method for producing a plurality of semiconductor layers ( 5 ) with the steps a) providing a substrate ( 1 ), b) applying a mask layer ( 3 ) having a plurality of openings ( 4 ) on the substrate ( 1 ) and c) growing a semiconductor material on the substrate ( 1 ), with the openings ( 4 ) adjacent sections of the mask layer ( 3 ) are laterally overgrown by the semiconductor material, the openings ( 4 ) in the mask layer ( 3 ) are spaced apart so that adjacent openings ( 4 ) belonging semiconductor layers ( 5 ) through a gap ( 9 ) are laterally spaced from each other, and wherein the mask layer ( 3 ) a layer sequence of individual layers ( 31 . 32 . 33 ), wherein at least one single layer ( 31 . 33 ) Titanium and wherein at least one further single layer ( 32 ) Contains aluminum. Method according to claim 11, wherein in step b) the mask layer ( 3 ) is applied with the steps - depositing a closed mask layer ( 3 ) and - forming the openings ( 4 ) in the mask layer ( 3 ). Method according to one of claims 11 or 12, wherein the openings ( 4 ) are formed in the form of parallel strips. Method according to one of claims 11 to 13, wherein the openings ( 4 ) have a width of 1 to 20 microns. Method according to one of claims 11 to 14, wherein the distances (d) between the openings ( 4 ) are chosen so that they are between 100 and 400 microns. Method according to one of claims 11 to 15, wherein before step b) an initial layer ( 2 ) on the substrate ( 1 ) and the mask layer ( 3 ) on the initial layer ( 2 ) is applied. The method of claim 16, wherein the initial layer ( 2 ) contains a nitride compound semiconductor. Method according to one of claims 11 to 17, wherein the semiconductor layer ( 5 ) contains a nitride compound semiconductor. Method according to one of claims 11 to 18, wherein the composition of the semiconductor layer ( 5 ) is varied in the direction perpendicular to the layer plane. Method according to one of claims 11 to 19, wherein the method is continued with the dicing of the substrate ( 1 ) into a plurality of individual substrates.