DE102022122549A1 - Magnetspeichervorrichtung - Google Patents

Magnetspeichervorrichtung Download PDF

Info

Publication number
DE102022122549A1
DE102022122549A1 DE102022122549.6A DE102022122549A DE102022122549A1 DE 102022122549 A1 DE102022122549 A1 DE 102022122549A1 DE 102022122549 A DE102022122549 A DE 102022122549A DE 102022122549 A1 DE102022122549 A1 DE 102022122549A1
Authority
DE
Germany
Prior art keywords
magnetic
layer
magnetic layer
pattern
storage device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102022122549.6A
Other languages
German (de)
English (en)
Inventor
Stuart Papworth Parkin
See-Hun Yang
Jiho Yoon
Ung Hwan Pi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Samsung Electronics Co Ltd
Original Assignee
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Gesellschaft zur Foerderung der Wissenschaften eV, Samsung Electronics Co Ltd filed Critical Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Publication of DE102022122549A1 publication Critical patent/DE102022122549A1/de
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
DE102022122549.6A 2021-11-25 2022-09-06 Magnetspeichervorrichtung Pending DE102022122549A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2021-0164289 2021-11-25
KR1020210164289A KR20230077239A (ko) 2021-11-25 2021-11-25 자기 메모리 장치

Publications (1)

Publication Number Publication Date
DE102022122549A1 true DE102022122549A1 (de) 2023-06-29

Family

ID=86383650

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102022122549.6A Pending DE102022122549A1 (de) 2021-11-25 2022-09-06 Magnetspeichervorrichtung

Country Status (4)

Country Link
US (1) US20230165164A1 (ko)
KR (1) KR20230077239A (ko)
CN (1) CN116168740A (ko)
DE (1) DE102022122549A1 (ko)

Also Published As

Publication number Publication date
KR20230077239A (ko) 2023-06-01
CN116168740A (zh) 2023-05-26
US20230165164A1 (en) 2023-05-25

Similar Documents

Publication Publication Date Title
DE112018001840B4 (de) Aufrechterhalten eines koerzitivfelds nach hochtemperaturtempern für magnetvorrichtungsanwendungen mit senkrechter magnetischer anisotropie
DE112012000741B4 (de) Magnetische Stapel mit senkrechter magnetischer Anisotropie für einen magnetoresistiven Spin-Impuls-Transfer-Direktzugriffsspeicher
DE60025418T2 (de) Magnetische Mehrschichtenstruktur
DE60013079T2 (de) Doppeltes magnetisches Element mit zwei magnetischen Zuständen und Herstellungsverfahren dafür
DE69533636T2 (de) Magnetowiderstandseffektvorrichtung und hiermit versehener Magnetkopf, Speicher- und Verstärkungsanordnung
EP1163676B1 (de) Speicherzellenanordnung und verfahren zu deren herstellung
DE60313636T2 (de) Nanokristalline schichten und verbesserte mram-tunnelsperrschichten
DE112018002604B4 (de) Mehrschichtige struktur zur reduzierung der filmrauheit in magnetischen vorrichtungen
DE60312713T2 (de) Amorphe legierungen für magneteinrichtungen
EP1105878B1 (de) Speicherzellenanordnung und verfahren zu deren herstellung
DE60208224T2 (de) Magnetoresistive hochleistungs-spinventilanordnung
DE60222985T2 (de) Magnetische Speicheranordnung und deren Herstellungsverfahren
DE19528245B4 (de) Magneto-Widerstandskopf und dessen Verwendung in einer Magnetaufzeichnungsvorrichtung
DE10305823B4 (de) Magnetowiderstandseffekt-Element und Magnetspeicher mit einem solchen
DE19726077A1 (de) Speicherzellenstruktur in einem magnetischen Speicher mit wahlfreiem Zugriff und Verfahren zu deren Herstellung
DE102010037257A1 (de) Magnetspeichervorrichtungen
DE102006028387A1 (de) Magnetische Speichervorrichtung und Verfahren zum Ansteuern derselben
DE102016105479A1 (de) BCC-Multischichten mit senkrechter magnetischer Anisotropie
EP1417690B1 (de) Schichtensystem mit erhöhtem magnetoresistiven effekt sowie verwendung desselben
DE60303194T2 (de) Antiferromagnetisch stabilisiertes pseudodrehventil für speicheranwendungen
DE112017001644T5 (de) Nichtflüchtige speichervorrichtung und verfahren zur herstellung der nichtflüchtigen speichervorrichtung
DE112017003371T5 (de) Magnetsensor
DE102019126320B4 (de) Magnetoresistiver Sensor und Fertigungsverfahren für einen magnetoresistiven Sensor
DE102021130636B4 (de) Dreidimensionale trichterartige spin-transfer-drehmoment-mram-zelle mit ungleichmässiger dicke in jeder schicht
DE102006015971A1 (de) Speicherelement mit adiabatischer Drehumschaltung und ferromagnetischer Entkopplungsschicht

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0043000000

Ipc: H10N0050000000