DE102022122549A1 - Magnetspeichervorrichtung - Google Patents

Magnetspeichervorrichtung Download PDF

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Publication number
DE102022122549A1
DE102022122549A1 DE102022122549.6A DE102022122549A DE102022122549A1 DE 102022122549 A1 DE102022122549 A1 DE 102022122549A1 DE 102022122549 A DE102022122549 A DE 102022122549A DE 102022122549 A1 DE102022122549 A1 DE 102022122549A1
Authority
DE
Germany
Prior art keywords
magnetic
layer
magnetic layer
pattern
storage device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102022122549.6A
Other languages
German (de)
English (en)
Inventor
Stuart Papworth Parkin
See-Hun Yang
Jiho Yoon
Ung Hwan Pi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Samsung Electronics Co Ltd
Original Assignee
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Gesellschaft zur Foerderung der Wissenschaften eV, Samsung Electronics Co Ltd filed Critical Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Publication of DE102022122549A1 publication Critical patent/DE102022122549A1/de
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00Hall-effect devices
    • H10N52/80Constructional details
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1673Reading or sensing circuits or methods
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1675Writing or programming circuits or methods
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0841Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/80Constructional details
    • H10N50/85Magnetic active materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00Hall-effect devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
DE102022122549.6A 2021-11-25 2022-09-06 Magnetspeichervorrichtung Pending DE102022122549A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2021-0164289 2021-11-25
KR1020210164289A KR20230077239A (ko) 2021-11-25 2021-11-25 자기 메모리 장치

Publications (1)

Publication Number Publication Date
DE102022122549A1 true DE102022122549A1 (de) 2023-06-29

Family

ID=86383650

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102022122549.6A Pending DE102022122549A1 (de) 2021-11-25 2022-09-06 Magnetspeichervorrichtung

Country Status (4)

Country Link
US (1) US20230165164A1 (ko)
KR (1) KR20230077239A (ko)
CN (1) CN116168740A (ko)
DE (1) DE102022122549A1 (ko)

Also Published As

Publication number Publication date
KR20230077239A (ko) 2023-06-01
CN116168740A (zh) 2023-05-26
US20230165164A1 (en) 2023-05-25

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Legal Events

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R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0043000000

Ipc: H10N0050000000