DE102021206477A1 - Hermetically sealed optical projection assembly and method of making same - Google Patents

Abstract

An optical projection arrangement (10) comprises a first assembly (10-1), which is arranged on a gas-tight first partial substrate (20-1), with an optoelectronic component (30) arranged on the first partial substrate (20-1), wherein at least part of the transmission radiation (32) of the optoelectronic component (30) has a main emission direction in a range of ± 30° to a vertical of the first partial substrate (20-1), a gas-tight cover element (38) which is connected to the first partial substrate (20 -1) is hermetically joined in order to provide a hermetically sealed housing for the optoelectronic component (30), the covering element (38) having a material that is transparent to the transmission radiation, at least in the area of the main emission direction, a lens arrangement (40) which is fixed with respect to of the cover element (38) is arranged for collimating the transmission radiation (32) of the optoelectronic component (30), and a prism arrangement (50) which is designed to the col to guide limited transmission radiation (32) of the optoelectronic component (30) and to decouple it on a decoupling surface (52), and also a second assembly (10-1), which is arranged on a second partial substrate (20-1), with a MEMS Mirror arrangement (60) with a movably suspended and deflectable MEMS-based mirror element (62), the prism arrangement (50) and the MEMS mirror arrangement (60) being arranged geometrically in relation to one another in such a way that the emitted transmission radiation (32) is at an angle of incidence β impinges on the movably suspended MEMS-based mirror element (62), the angle of incidence β in the idle state of the MEMS-based mirror element (62) being in a range between 30° and 50°.

Description

The present invention relates to a hermetically sealed optical projection assembly, such as. B. an optical projection system in the form of an RGB scanner (RGB = Red-Green-Blue), and further to a method for manufacturing such a hermetically sealed, optical projection device.

Current systems for full-color projection are comparatively large and are therefore only suitable to a limited extent for integration into slim AR/VR glasses (AR = Augmented Reality, VR = Virtual Reality). The size of the light engine (=light generator) and in particular its structural height requires a relatively large structural volume of such optical projection devices. In currently used projection systems, for example, individually TO-housed laser diodes (TO=transistor outline), jointly TO-housed charger diodes and/or laser diode structures in metal butterfly housings are used.

Furthermore, blue and green charger diodes are finding ever broader fields of application, with blue laser diodes, for example, being widely used and established as components for reading high-density optical storage media (Blu-Ray). Furthermore, various other applications of powerful blue and green laser diodes are emerging, such as RGB light sources in mobile image and video projections and in medical and biological spectroscopy. Both green and blue laser diodes are currently hermetically sealed in special TO headers (TO 38) with an integrated optical window and a copper heat sink, i.e. packed or encapsulated in a housing).

The object on which the present invention is based is therefore to provide an improved optical projection arrangement which, even when using a plurality of optoelectronic transmission components, such as e.g. B. RGB laser diodes, a compact structure allows.

The present invention is also based on the object of creating a corresponding production method for such improved optical projection arrangements.

This object is solved by the subject matter of the independent patent claims.

Advantageous refinements and developments of the concept according to the invention are the subject matter of the dependent patent claims.

An optical projection arrangement comprises a first assembly, which is arranged on a gas-tight first partial substrate, and a second assembly, which is arranged on a second partial substrate.

The first subassembly comprises an optoelectronic component arranged on the first partial substrate, at least part of the transmission radiation of the optoelectronic component having a main emission direction in a range of ±30° to a vertical of the first partial substrate, a gas-tight cover element which is hermetically sealed to the first partial substrate is joined in order to provide a hermetically sealed housing for the optoelectronic component, the covering element having a material that is transparent to the transmission radiation, at least in the area of the main emission direction, a lens arrangement which is fixed with respect to the covering element, for collimating the transmission radiation of the optoelectronic component, and a prism arrangement that is designed to guide the collimated transmission radiation of the optoelectronic component and to couple it out at a coupling-out surface.

The second assembly comprises a MEMS mirror arrangement with a movably suspended and deflectable MEMS-based mirror element, the prism arrangement and the MEMS mirror arrangement being arranged geometrically in relation to one another in such a way that the emitted transmission radiation hits the movably suspended MEMS-based at an angle of incidence β Mirror element meets, wherein the angle of incidence β is in the rest state of the MEMS-based mirror element in a range between 30 ° and 50 °.

• Anordnen einer ersten Baugruppe auf einem gasdichten ersten Teilsubstrat, mit Anordnen eines optoelektronischen Bauteils an dem ersten Teilsubstrat, wobei zumindest ein Teil der Sendestrahlung des optoelektronischen Bauteils eine Hauptabstrahlrichtung in einem Bereich von ± 30° zu einer Vertikalen des ersten Teilsubstrats aufweist, Hermetisches Fügen eines gasdichten Abdeckungselements mit dem ersten Teilsubstrat, um eine hermetisch dichte Häusung für das optoelektronische Bauteil bereitzustellen, wobei das Abdeckungselement zumindest im Bereich der Hauptabstrahlrichtung ein für die Sendestrahlung transparentes Material aufweist, Anordnen einer Linsenanordnung fest bezüglich des Abdeckungselements zur Kollimation der Sendestrahlung des optoelektronischen Bauteils, und Anordnen einer Prisma-Anordnung an dem Abdeckungselement, wobei die Prisma-Anordnung ausgebildet ist, um die kollimierte Sendestrahlung des optoelektronischen Bauteils zu führen und unter einem ersten Winkel α bzgl. einer Auskoppeloberfläche des Umlenkprismas auszukoppeln, wobei der erste Winkel α in einem Bereich zwischen 20° und 40° liegt, und

A method for producing an optical projection arrangement comprises the following steps:

• Arranging a first subassembly on a gas-tight first partial substrate, with arranging an optoelectronic component on the first partial substrate, wherein at least part of the transmission radiation of the optoelectronic component has a main emission direction in a range of ± 30° to a vertical of the first partial substrate, hermetic joining of a gas-tight Covering element with the first partial substrate in order to provide a hermetically sealed housing for the optoelectronic component, the covering element having a material that is transparent to the transmitted radiation at least in the area of the main emission direction, arranging a lens arrangement fixed with respect to the covering element for collimating the transmitted radiation of the optoelectronic component, and arranging a prism arrangement on the cover element, wherein the prism Arrangement is designed to guide the collimated transmission radiation of the optoelectronic component and decouple it at a first angle α with respect to a decoupling surface of the deflection prism, the first angle α being in a range between 20° and 40°, and

Arranging a second assembly on a second sub-substrate, with arranging a MEMS mirror arrangement with a movably suspended and deflectable MEMS-based mirror element on the second sub-substrate, wherein the prism arrangement and the MEMS mirror arrangement are arranged geometrically to one another in such a way that the emitted transmission radiation impinges on the movably suspended MEMS-based mirror element at a second angle β, wherein the angle β lies in a range between 30° and 50° in the rest state of the MEMS-based mirror element.

The inventive realization of the optical projection arrangement, z. B. as a compact RGB scanner, for example, enables full-color projection of data and images in AR/VR glasses and other applications. In particular, the service life of the semiconductor light sources used, in particular with wavelengths of less than 500 nm, can be designed to be extremely long-lasting due to the independence from the ambient atmosphere, since a hermetic and organic-free housing seal can ensure a desired, specified, chemical composition of the working atmosphere of the semiconductor light sources once it has been set. The inventive concept allows the entire optical projection arrangement (RGB scanner arrangement) to be geometrically compacted with an integrated MEMS mirror arrangement in a hermetically sealed optical housing while avoiding organic joining materials and introducing a defined working atmosphere.

What can thus be achieved is that the housed radiation-emitting components of the optical projection arrangement can have a long service life with consistently good beam and power quality. In particular, damage to the beam exit regions from the semiconductor light sources can be reduced or completely prevented, which damage can otherwise occur as a result of exposure to water vapor and volatile organic components and exposure to the extremely intense and high-energy laser radiation.

In addition, a compact component size of the optical projection arrangement can be achieved, in particular in connection with a MEMS mirror scanner arrangement additionally integrated in the optical projection arrangement, with parasitic impedances of the electrical connections being reduced and the heat dissipation from the housing being extremely effective.

The present invention is thus based on the finding of providing an optical projection arrangement and a corresponding manufacturing method for this optical projection arrangement, with at least the optoelectronic components (transmitting and/or receiving semiconductor components) being hermetically (= gas-tight) encapsulated on the substrate of the assembly In order to be able to operate the semiconductor light sources in a defined working atmosphere, since the hermetic encapsulation can achieve an organic-free housing seal for the semiconductor light sources.

Furthermore, the configuration of the optical projection arrangement enables a substantially vertical beam arrangement or beam guidance (= emission direction) of the optoelectronic transmission components with respect to the substrate plane, with a MEMS mirror arrangement with a movably suspended and (with a control signal) deflectable MEMS-based mirror element being mechanically firmly coupled is. The mirror plate (mirror surface) of the MEMS mirror element can be aligned parallel or only slightly tilted to the substrate plane, for example in the idle state (=in the non-deflected state or in the zero position).

The optical projection arrangement according to the invention is designed, for example, as a first and second assembly, which are arranged on part substrates (substrate sections) that are firmly coupled to one another or on a common carrier substrate, with the optical projection arrangement having or specifying an optical central axis as a photonic arrangement, the center of which is on the movable MEMS mirror plate of the MEMS mirror element is aligned. The optical projection arrangement has, for example, one or a plurality of semiconductor-based light sources, which are arranged on a gas-tight, first partial substrate and are hermetically sealed with a gas-tight cover element, on which a lens arrangement is also arranged, and also a prism arrangement (with deflection and beam combination functionality).

The at least one hermetically housed semiconductor-based light source has a light exit direction pointing away from the carrier substrate (e.g. vertically), the lens arrangement being arranged on the gas-tight cover element is designed for collimating the divergent radiation of the at least one optoelectronic light source.

The deflection prism now has the property of guiding the transmitted radiation or the different beams of the transmitted radiation (in the case of several transmitting components at the different wavelengths) of the at least one semiconductor light source and decoupling them at a decoupling angle (first angle α), with the guided transmitted radiation (= a single Transmission beam or a combination of a plurality of transmission beams) of the at least one optoelectronic transmission component strikes the movably suspended MEMS-based mirror plate at an angle of incidence β.

The MEMS mirror arrangement can be surrounded by a dome-like glass cap, for example. According to one exemplary embodiment, the dome-shaped glass cap of the MEMS mirror arrangement can be designed to hermetically encapsulate the MEMS mirror arrangement and/or as mechanical protection from the outside world (=environmental atmosphere) or additionally provide hermetic shielding.

This structural arrangement of the individual elements of the optical projection arrangement with the at least one optoelectronic transmission component, the lens arrangement, the prism arrangement and the MEMS mirror arrangement and their geometric alignment with one another allows an extremely compact design with a small installation volume of the optical projection arrangement to be obtained, with Due to the hermetic (gas-tight) encapsulation of the at least one optoelectronic transmission component with accommodation in a defined working atmosphere, a long service life of the at least one optoelectronic component and thus of the optical projection arrangement can be achieved.

According to the invention, the gas-tight, hermetic encapsulation of the at least one optoelectronic transmission component in the gas-tight cover element with the lens arrangement arranged thereon can now be obtained by, for example, producing a flat, optically permeable cover (cover element) for an improved, housed, radiation-emitting component at the wafer level.

According to an exemplary embodiment, a method for producing a cover substrate, e.g. for packaging one or a plurality of optical components, comprises the steps of: providing a mold substrate having a structured surface area with a depression and a cover substrate having a glass material; bonding the cap substrate to the mold substrate to form a sealed cavity between the cap substrate and the mold substrate via the depression; annealing the cap substrate and the mold substrate to reduce the viscosity of the glass material of the cap substrate and providing a positive pressure in the sealed cavity relative to the surrounding atmosphere to based on the reduced viscosity of the glass material of the cap substrate and the positive pressure in the sealed cavity relative to the surrounding Atmosphere to bring about a defined bulging of the glass material of the cover substrate, starting from the closed cavity up to a stop surface spaced apart from the cover substrate, in order to obtain a shaped cover substrate with at least one cover element; and removing the stop member and the mold substrate from the molded cover substrate, wherein the molded cover substrate forms the cover substrate with the at least one cover member.

According to an exemplary embodiment, another method for producing a cover substrate, e.g. for packaging one or a plurality of optical components, comprises the steps of: providing a molded substrate having a structured surface area which has depressions and a cover substrate which has a glass material; bonding a second major surface portion of the cap substrate to a first major surface portion of the mold substrate to form sealed cavities between the cap substrate and the mold substrate by means of the indentations; Annealing the cover substrate and the mold substrate to reduce the viscosity of the glass material of the cover substrate to cause the glass material to flow into the depressions based on the reduced viscosity of the glass material of the cover substrate to obtain a molded cover substrate with at least one cover element, and removing the molded substrate from the molded cap substrate, wherein the molded cap substrate forms the cap substrate with the at least one cap member.

In such a procedure for producing the optically transparent cover (as a gas-tight cover element), a mold substrate is used to form cover substrates using a glass flow process, with optically flat window areas with a defined height offset being able to be produced in a glass cover substrate. With this glass cover substrate (cover element), sensitive radiation sources (semiconductors light sources) are hermetically sealed at the wafer and/or individual substrate level. The glass flow process allows the production of very smooth glass surfaces with roughnesses in the range of less than 5 nm.

Covering elements for housing radiation-sensitive components, e.g. B. only a (single) glass material for the production of the (gas-tight) cover element is used. Thus, if a mold substrate is used to form cover members (cap substrates) by glass flow molding, a large number of cover members (glass caps) with similarly shaped dimensions can be formed, which can then be used to hermetically cap sensitive semiconductor light sources. Insofar as reasons for the assembly technology require it, these formed glass cover elements can also be separated and the cover elements can be used for individual encapsulation on assembled carrier substrates both at the wafer level and at the individual substrate level.

It can thus be achieved that the housed, radiation-emitting optoelectronic components have a long service life with consistently good beam and power quality. In particular, clouding of the exit window and damage to the laser facets can be reduced or prevented since exposure to water vapor and volatile organic components from exposure to the extremely intense and high-energy laser radiation can be reduced or prevented. In addition, the heat dissipation from the housing can be improved. Furthermore, low manufacturing costs can be achieved.

In a further possible procedure for producing the cover elements, a mold substrate can be used for the production of cover substrates by means of anodic bonding, for example, in which case optically flat window areas with a defined height offset can be produced in a glass-silicon cover substrate, with which sensitive radiation sources can then be sealed hermetically can pack tightly at the wafer and/or single substrate level.

According to a further possible production method, cover substrates with the cover elements with similar properties can also be produced by glass frit bonding or metallic joining techniques instead of the anodic bonding mentioned above.

• 1a eine beispielhafte Ausführungsform der optischen Projektionsanordnung in einer Querschnittsansicht gemäß einem Ausführungsbeispiel:
• 1 b eine beispielhafte Ausführungsform der optischen Projektionsanordnung in einer Draufsicht gemäß dem Ausführungsbeispiel;
• 1c-e eine beispielhafte Ausführungsform einer Prisma-Anordnung für die optische Projektionsanordnung in unterschiedlichen Ansichten gemäß einem Ausführungsbeispiel;
• 2 - 8 weitere beispielhafte Ausführungsformen der Projektionsanordnung in einer Querschnittsansicht gemäß weiteren Ausführungsbeispielen;
• 9 ein beispielhaftes Flussdiagramm des Verfahrens zur Herstellung der optischen Projektionsanordnung gemäß einem Ausführungsbeispiel;
• 10 - 12 beispielhafte Flussdiagramme zur Herstellung von (gasdichten) Abdeckungselementen gemäß weiteren Ausführungsbeispielen;
• 13a-b beispielhafte Ausführungsformen für ein hermetisch gehäustes, optoelektronisches Bauelement gemäß weiteren Ausführungsbeispielen; und
• 14a-b beispielhafte Ausführungsformen für ein hermetisch gehäustes, optoelektronisches Bauelement gemäß weiteren Ausführungsbeispielen.

Preferred exemplary embodiments of the present invention are explained in more detail below with reference to the accompanying drawings. Show it:

• 1a an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to an embodiment:
• 1 b an exemplary embodiment of the optical projection arrangement in a top view according to the exemplary embodiment;
• 1c-e an exemplary embodiment of a prism arrangement for the optical projection arrangement in different views according to an embodiment;
• 2 - 8th further exemplary embodiments of the projection arrangement in a cross-sectional view according to further exemplary embodiments;
• 9 an exemplary flowchart of the method for manufacturing the optical projection arrangement according to an embodiment;
• 10 - 12 exemplary flow charts for the production of (gas-tight) cover elements according to further exemplary embodiments;
• 13a-b exemplary embodiments for a hermetically housed optoelectronic component according to further exemplary embodiments; and
• 14a-b exemplary embodiments for a hermetically housed, optoelectronic component according to further exemplary embodiments.

Before exemplary embodiments of the present invention are explained in more detail below with reference to the drawings, it is pointed out that identical elements, objects, function blocks and/or method steps that have the same function or have the same effect are provided with the same reference symbols in the different figures, so that the Embodiments illustrated description of these elements, objects, function blocks and / or method steps (with the same reference numerals) is interchangeable or can be applied to each other.

In the following description, the description of an element made of a semiconductor material means that the element has a semiconductor material, ie is formed at least partially or completely from the semiconductor material. In the following description, the Description of an element made of a glass material, that the element has a glass material, ie is formed at least partially or completely from the glass material.

It should be understood that when an element is referred to as being “connected” or “coupled” to another element, it may be directly connected or coupled to the other element, or intermediary elements may be present. In contrast, when an element is said to be "directly connected" or "coupled" to another element, there are no intermediate elements present. Other terms used to describe the relationship between elements should be construed in a similar manner (e.g., "between" versus "directly between," "adjacent" versus "directly adjacent," etc.).

To simplify the description of the different exemplary embodiments, the figures have a Cartesian coordinate system x, y, z, with the directions x, y, z being arranged orthogonally to one another. In the exemplary embodiments, the x-y plane corresponds to the main surface area of a carrier or substrate (= reference plane = x-y plane), with the vertical direction upwards relative to the reference plane (x-y plane) corresponding to the "+z" direction, and where the vertical downward direction with respect to the reference plane (x-y plane) corresponds to the "-z" direction. In the following description, the term "lateral" means a direction parallel to the x and/or y direction, i. H. parallel to the x-y plane, where the term "vertical" indicates a direction parallel to the +/-z direction.

The following is now based on the 1a-e a possible configuration or embodiment of an optical projection arrangement 10 according to an exemplary embodiment is described by way of example.

So shows 1a an exemplary cross-sectional view of the optical projection assembly 10 with the plane of the drawing parallel to the xz plane, while 1b shows an exemplary top view of the optical projection arrangement 10 with the drawing plane parallel to the xy plane.

The optical projection device 10 now comprises, for example, a first assembly 10-1, which is arranged on a gas-tight first partial substrate or a gas-tight first substrate section 20-1, and a second assembly 10-2, which is on a second partial substrate or a second substrate section 20-2 is located.

The first subassembly 10-1 of the optical projection arrangement 10 has a transmission arrangement 30 with (at least) one optoelectronic (semiconductor-based component (= transmission component or transmission component, such as a laser diode or an LED) 30 arranged on the gas-tight first partial substrate -1 At least part of the transmission radiation 32-1 of the optoelectronic component 30-1 has an emission direction or main emission direction in a range of +/- 30° or +/- 20° to a vertical (to the plane) of the first partial substrate 20 -1 on.

According to the exemplary embodiments described, the transmission arrangement 30 can have one or a plurality of optoelectronic transmission components, with 1a three optoelectronic transmission components 30-1, 30-2, 30-3 are shown by way of example, that is, the optoelectronic transmission component 30-1 and the “optional” optoelectronic transmission components 30-2, 30-3. At least part of the respective transmission radiation 32-1 of the optoelectronic component 30-1 or part of the respective transmission radiation 32-1, 32-2, 32-3 of the optoelectronic components 30-1, 30-2, 30-3 has a Emission direction or main emission direction in an angular range of +/- 30 ° or +/- 20 ° to a vertical (to the plane) of the gas-tight first partial substrate 20-1.

According to an exemplary embodiment of the optical projection arrangement 10, the optoelectronic transmission components 30-1, 30-2, 30-3 (= the optoelectronic transmission component 30-1 and the optional optoelectronic transmission components 30-2, 30-3) can also be arranged around a main emission direction (main exit direction) of the respective transmission radiation 32-1, 32-2, 32-3 from the respective transmission component vertical to the first partial substrate, i.e. in order to provide a vertical beam guidance (up to the prism arrangement 50), as is shown by way of example in 1a is shown.

When the transmitted radiation 32 diverges, for example, the central axis of the transmitted radiation 32-1, 32-2, 32-3 and/or the main axis becomes the emission direction or main emission direction of the transmission radiation 32 of the optoelectronic components 30-1, 30-2, 30-3 an intensity maximum of the transmission radiation 32 denotes. In the context of the present description, the divergence of the transmission radiation 32 is the widening or the beam angle of the transmission radiation 32-1, 32-2, 32-3, e.g. B. a laser beam and / or LED radiation.

According to exemplary embodiments, the transmission arrangement 30 can therefore have at least one transmission component 30-1 or a plurality (=at least two) of optoelectronic transmission components. In 1a is now shown by way of example that the transmission arrangement 30 has, for example, three individual transmission components 30-1, 30-2, 30-3. The send order Generation 30 can be designed, for example, as a multicolor transmission arrangement or RGB transmission arrangement, with a first transmission component 30-1 having a first, e.g. B. red transmission radiation 32-1, a second transmission component 30-2, a second, z. B. green transmission radiation 32-2 and a third transmission component 30-3 a third, z. B. has blue transmission radiation 32-3. The common transmission radiation 32 can thus have an individual transmission radiation or a combination of several or a combination of all individual transmission radiations 32-1, 32-2, 32-3 of the optoelectronic transmission components 30-1, 30-2, 30-3. The number of optoelectronic transmission components 30-1, 30-2, 30-3 for the transmission arrangement 30 is based on the requirements for the respective use of the optical projection arrangement and includes at least one transmission component 30-1.

The first assembly 10-1 also has a gas-tight cover element 38, which is hermetically joined or connected to the gas-tight first partial substrate 20-1 in order to form a hermetically tight or gas-tight housing for the (at least one) optoelectronic component 30-1 or For the plurality of optoelectronic components 30-1, 30-2, 30-3, the cover element 38, at least in the area of the main emission direction of the transmitted radiation 32 or 32-1, 32-2, 32-3, is a transparent element for the transmitted radiation 32 Material has, that is, for the emitted transmission radiation 32 is transparent.

At the in 1a In the embodiment shown, a lens holder structure (= lens holder elements) 42 is provided as part of a frame structure 44 for fixing the lens arrangement 40, the frame structure 44 with the lens holder structure 42 being arranged fixedly on the gas-tight first partial substrate 10-1, on which the gas-tight covering element 38 is hermetically joined so that the gas-tight cover member 38 and the lens assembly 40 are fixed to each other or fixed to each other. As in 1a As illustrated by way of example, the frame structure 44 is not connected to the cover member 38 at any point (ie not directly). According to a further embodiment, the gas-tight cover element 38 can also be designed as the lens holder structure for the lens arrangement 40, in which case the frame structure 44 only carries the prism 50 and the lens arrangement 40 with the cover element 38 (or cover substrate) via the lens holder structure (or spacers ) 42 is indirectly connected.

The lens arrangement 40 can thus be arranged or fixed in a defined focal position with respect to the gas-tight cover element 38 by means of the frame structure 44 and the lens holder structure 42 arranged thereon. According to a further exemplary embodiment, the lens arrangement 40 can also be fixed (glued) to the gas-tight cover element 38 in the defined focal position.

According to one exemplary embodiment, the (shaped) gas-tight cover element or cover element 38 has a side wall area 38-1 between a base area 38-2 and a top area 38-3, with the top area 38-3 of the cover element 38 being the one for the transmission radiation 32 of the at least one optoelectronic Component 30 has permeable material, and is provided for decoupling the transmission radiation.

According to one embodiment, the gas-tight first carrier substrate 20-1 has a thermally conductive and, for example, also electrically insulating ceramic material, for example Al ₂ O ₃ , AlN, SI ₃ N ₄ , LTCC, HTCC, etc. with a low thermal expansion coefficient or a semiconductive material, such as eg silicon, on or made up of it. The gas-tight first carrier substrate 20-1 and the hermetically joined, gas-tight cover element 38 thus form the hermetic (= gas-tight) primary housing 20-1, 38 (with the cavity 39) around the optoelectronic components 30 (3-1, 30-2, 30-2). The hermetic primary housing 20-1, 38 for the at least one optoelectronic component 30 now has, for example, a reactive atmosphere with exclusively inorganic substances and/or is designed to be hermetically sealed against the ingress of water vapor.

According to the exemplary embodiments described, the lens arrangement 40 can have (at least) one lens element 40-1 or a plurality of lens elements 40-1, 40-2, 40-3, with in 1a three lens elements 40-1, 40-2, 40-3 are shown by way of example, that is, the lens element 40-1 and the "optional" lens elements 40-2, 40-3.

The lens arrangement 40 thus has one or a plurality of lens elements 40-1, 40-2, 40-3, one lens element 40-1, 40-2, 40-3 being used for an optoelectronic transmission component 30-1, 30-2 , 30-3 is provided and assigned to the respective, z. B. divergent transmission radiation 32-1, 32-2, 32-3 of the optoelectronic component 30-1 or the optoelectronic components 30-1, 30-2, 30-3.

In optics, collimation refers to the parallel direction of divergent light beams, with the lens elements 40-1, 40-2, 40-3 of the lens arrangement 40 also being referred to as collimators or converging lenses. The lens arrangement 40 can also be designed as an integrated multiple lens 40, in which case the lens elements 40-1, 40-2, 40-3 are integrally arranged together in the multi-lens 40.

According to an exemplary embodiment of the optical projection arrangement 10, the lens arrangement 40 can therefore have a plurality of collimating lenses 40-1, 40-2, 40-3 for the optoelectronic transmission arrangement 30 for collimating the e.g. divergent transmission radiation 32-1, 32-2, 32-3 of the optoelectronic components 30-1, 30-2, 30-3, e.g. each having a collimating lens 40-# for an optoelectronic component 30-#.

According to an exemplary embodiment of the optical projection arrangement 10, the lens arrangement 40 can therefore have a collimation lens 40-# for an optoelectronic component 30-#, with the collimation lens 40-# being a collimation lens element or also a plurality of collimation lens elements (optically) arranged one behind the other (as a collimation lens arrangement ) to form the respective collimating lens 40-#.

The optical projection arrangement 10 further comprises a prism arrangement 50 with a deflection functionality and (optionally) a beam combining functionality. The prism arrangement 50 is now designed to deflect and guide the collimated transmission radiation 32 of the at least one optoelectronic transmission component 30 - 1 and to decouple it at a decoupling surface 52 of the prism arrangement (=deflection prism) 50 .

If the optoelectronic transmission arrangement 30 has a plurality of optoelectronic components 30-1, 30-2, 30-3, the prism arrangement 50 is now designed in such a way that the collimated (common) transmission radiation 32, i. H. to deflect one or a combination of several or all of the individual transmission beams 32-1, 32-2, 32-3 of the optoelectronic transmission components 30-1, 30-2, 30-3 and to guide them together and on a decoupling surface 52 of the prism arrangement ( = deflection prism) 50 decouple. A broadband antireflection coating 56 can be applied to the exit surface 52 of the prism 50, for example.

According to one embodiment, the transmission radiation 32 can be decoupled, for example, at a decoupling angle α (= emission angle) with respect to the decoupling surface 52 of the prism arrangement 50, the decoupling angle α being in a range between 20° and 40° or between 24° and 30°, for example (27° +/- 3°).

The deflection functionality of the prism arrangement 50 is achieved by the respective transmission beam 32-1, 32-2, 32-3 from the optoelectronic components 30-1, 30-2, 30-3 by reflection at a respectively assigned reflection area 50-1 , 50-2, 50-3 of the prism arrangement 50 is deflected by the prism arrangement 50 in a “common” direction or optical axis. The individual transmission beams 32-1, 32-2, 32-3 of the transmission components 30 can thus be guided together and in parallel (=along a common optical axis 54) in the prism arrangement 50 up to its decoupling surface 52. In the prism arrangement 50, a reflective or, if possible, totally reflective deflection surface 50-1, 50-2, 50-3 provided to the beam deflection in the common, parallel optical axis 54 of the individual transmission beams 30-1, 30-2, 30-3, z. B. have different wavelengths to effect.

The beam combination prism 50 thus ends on the beam outlet side with the exit surface 52 pointing away from the carrier substrate 20, 20-1, 20-2. The terminating surface 53 of the prism 50 at the opposite end can be designed differently, e.g. with an attached, square terminating end to protect the mirror surface 50-1, provided that the 45° mirror surface 50-1 for beam deflection is not mechanically or optically impaired.

According to an exemplary embodiment of the optical projection arrangement 10, the first partial substrate 20-1 and the second partial substrate 20-2 can be mechanically firmly coupled, e.g. directly flanged, in order to form the carrier substrate 20.

Alternatively, the first sub-substrate 20-1 and the second sub-substrate 20-2 can form different sections or areas of the carrier substrate 20, i.e. the first sub-substrate 20-1 and the second sub-substrate 20-2 can together form the carrier substrate 20, so that the first assembly 10-1 and second assembly 10-2 are arranged on the common carrier substrate 20 as a combined photonic arrangement.

The beam combination of different wavelengths in the prism assembly 50 is not limited to the visible range (VIS = visible) and can be extended to both the near UV range and the near infrared range, ie the device can be used for the ranges UV-VIS, UV-VIS-NIR, VIS-NIR or UV-NIR can be set up with corresponding emitters 30-1, 30-2, 30-3 and a suitably specified beam combination prism 50. The wavelength range accessible with standard materials for this prism assembly 50 extends from about 300 nm to about 2650 nm ("approx." stands for a range of ± 10% around the specified value) . Through the use of quartz window and prism materials, this range can be extended to about 200 to about 3000 nm ("approx." stands for a range of ± 10% around the specified value), with uncapped MEMS Mirror 60 are used. In any case, this wide range requires special antireflection coatings and, if necessary, a special mirror coating of the MEMS mirror surface 62. The UV and IR extension range is particularly interesting for spectroscopic applications for molecular excitation, but can also be used for object detection.

According to an exemplary embodiment, a light source 32-1 with a transmission radiation in the near infrared range (NIR=850 nm to 1550 nm) can also be integrated, for example when using the optical projection arrangement 10 as an RGB scanner unit for data and image projection in mobile applications .

According to an exemplary embodiment of the optical projection arrangement, the prism arrangement 50 can have an optically effective coating, e.g. an anti-reflection coating 56, on the coupling-in surface 55 and/or the coupling-out surface 52.

A suitable beam combination prism is an optically cemented arrangement of optical glass panes with a thickness in the range 1 - 2 mm, which have been provided with specific dichroic filter coatings or one-sided mirroring and one-sided anti-reflection coating before optical cementing. Optically cemented is understood to be, for example, a bond with an adhesive that is adapted to the refractive index (between two adjacent or adjacent side surfaces of two prism elements), with the adhesive also being optically transparent to the light beam to be transmitted, for example. Depending on the wavelength range of the laser light sources, a variety of optical glasses can be used for this, such as AK 7, KZFS12, L-LASF43, RAYVOLUTION, etc. e.g. laser radiation) work as transmission or blocking filters. The filter characteristics are matched to the wavelengths of the emitters and their thermally induced change in wavelength with a sufficient tolerance of at least 20 nm. Depending on the wavelength, especially for infrared, a gold layer can also be suitable. The cemented glass panes are sawn to a final dimension of a few millimeters, taking into account the 45° angle position of the inner filter layers, and the edges are optically polished and, if necessary, provided with a broadband anti-reflective layer made of several inorganic oxides or local absorber coatings (e.g. metal oxides, black paint).

According to one exemplary embodiment, the frame structure 44 is mechanically firmly connected to the carrier substrate 20 and the prism arrangement 50, with the frame structure 44 being (at least) optically closed to the outside with peripheral walls 44-1, for example.

The following is now based on the 1c-e an example of a possible structure of the prism arrangement 50 as a beam combination prism for different wavelengths, e.g. B. for an RGB application described. The following explanations represent only one possible implementation among a large number of different possible implementations of the beam combination prism 50.

So shows 1c a top view, 1d a side view (cross-sectional view) and 1e FIG. 12 is a 3D (three dimensional) view of prism assembly 50 according to an embodiment. As in the 1c-e is shown, the prism arrangement 50 has, for example, three optical elements or prism elements, e.g. B. glass elements, 50-1, 50-2, 50-3, for example, the two prism elements 50-1, 50-2 are parallelepiped-shaped, while the third prism element 50-3 is a substantially vertical (To the base of the prism arrangement 50) having side surface (beam exit surface or coupling-out surface). Furthermore, other alignment planes can also be used for the decoupling surface in order to set the decoupling angle α and thus also the angle of incidence β onto the mirror element 62 for the respective desired application of the optical projection arrangement 10 .

In the 1c-e the individual side surfaces of the prism arrangement 50 or the prism elements 50-1, 50-2, 50-3 are denoted by the reference symbols F1-F11, with reference to these side surfaces F1-F11 of the prism arrangement 50 in the following possible dimensions and further the functions or mode of operation of the prism arrangement 50 is described by way of example.

The prism arrangement 50 is provided, for example, for an RGB application, with a first wavelength λ1 blue light with a wavelength of 450 nm +/- 20 nm, the second wavelength λ2 green light with a wavelength of 510 nm +/- 20 nm, and the third wavelength λ3 corresponds to red light with a wavelength of 635 nm +/- 20 nm can. If a light-transmitting coating or anti-reflection coating is mentioned below, a light transmission or optical transmission for the respective wavelength of more than 99% is assumed. In the case of a reflective surface and/or coating, a degree of reflection (also reflectivity, reflectivity or reflectance) with a value of more than 99% is assumed. In the case of a matt surface material or surface condition or an absorbent surface material or surface condition, an absorption degree or absorption capacity of greater than 99% is assumed. An exemplary tolerance range for the dimensions specified below is in the range of +- 5% or +- 1% and for the angle information in a range between +- 5% or +- 2%. Furthermore, a surface roughness (rms) of ≦20 nm is assumed, for example.

The side surface F1 has a length of 2.12 mm, for example, and is formed at an angle of 45° to the base surface (x-y plane=reference plane). The surface 1 is designed as a mirror surface for a first partial light beam with the wavelength λ1. The side surface F2 has a length of 1.5 mm, for example, and is parallel to the base surface. The side face F2 is transparent for the wavelength λ1 and has, for example, an antireflection coating.

The side surface F3 has a length of 1.5 mm, for example, and is formed parallel to the base surface. The side surface F3 is transparent for the second wavelength λ2 and has an antireflection coating, for example.

The side surface F4 has a length of 1.7 mm, for example, and is formed parallel to the base surface. The side surface F4 is optically transparent for the wavelength λ3 and has an anti-reflection coating, for example. The side surfaces F2, F3, F4 correspond to the coupling surface 55 shown above.

The side surface F5 has a length of 1.5 mm, for example, and is formed perpendicular (vertical) to the base surface (the side surfaces F2 - F4). The side surface F5 is transparent for the wavelengths λ1, λ2 and λ3.

The side surface F6 has a length of 1.5 mm, for example, and is formed parallel to the base surface. The side surface F6 is, for example, designed to be matt or absorbing for the wavelengths λ1, λ2 and λ3. The side surface F7 has, for example, a length of 1.5 mm parallel to the base surface and is also designed to be matt or absorbent.

The side surface F8 has a length of 2.12 mm, for example, and is formed at an angle of 45° to the base surface. The side surface F8 is transparent for the wavelength λ1 and reflective for the wavelength λ2.

The side surface F9 has a length of 2.12 mm, for example, and is formed at an angle of 45° to the base surface. The side surface F9 is transparent for the wavelengths λ1 and λ2 and reflective for the wavelength λ3.

The side surfaces F10 and F11 of the prism arrangement 50 (see 1d ) are, for example, matt (with a matt surface finish or surface coating) or absorbent (with an absorbent surface finish).

In 1c the individual transmission radiations 32-1 (λ1), 32-2 (λ2) and 32-3 (λ3) are also shown, which ultimately form the common, coupled-out transmission radiation 32 along the optical axis 54.

In the 1c and 1d are also given height H (=thickness) and the width B of the prism arrangement 50, wherein the height H (=thickness) of the prism arrangement 50 can be about 1 to 2 mm or about 1.5 mm, and the width B of the prism arrangement 50 can also be about 1 to 2 mm or about 1.5 mm.

1e shows to clarify the geometric structure of the prism arrangement 50 with the three prism elements 50-1, 50-2, 50-3 in a 3D view (three-dimensional view), the prism elements 50-1, 50-2 , 50-3 and the side surfaces F1, ..., F11 are drawn in again.

The side surfaces F2, F3 and F4 are designed for a 90° beam entry from the transmission components 30-1, 30-2, 30-3. Furthermore, the side surface F5 (decoupling surface 52) can be formed vertically to the base surface, in which case other alignment planes can also be used for the surface F5 in order to adjust the decoupling angle α and thus also the angle of incidence β onto the mirror element 62 for the respective desired application of the optical Projection arrangement 10 set.

The second assembly 10-2 of the optical projection arrangement 10 now comprises on the second partial substrate or partial section 20-2 of the substrate 20 a MEMS mirror arrangement 60 with a movably suspended deflectable MEMS-based mirror element (= mirror surface) 62. The MEMS mirror arrangement 60 is, for example, with an external control signal S, for example via the Kon clock or bonding areas 64, controllable in order to bring about, based on the control signal S, the deflection of the MEMS-based mirror element 62 and thus the alignment of the common transmission radiation 32 in a desired spatial direction (within the mechanical deflection range of the mirror element 62).

The prism arrangement 50 of the first assembly 10-1 and the MEMS mirror arrangement 60 of the second assembly 10-2 are now arranged geometrically in relation to one another such that the emitted transmission radiation 32, which, for example, the individual transmission beams 32-1, 32-2, 32 -3 of the optoelectronic components 30-1, 30-2, 30-3 or any combination thereof, in each case at an angle of incidence β, which can be set, for example, by the deflection of the MEMS mirror element 62 that can be effected with the control signal S, to the movable suspended MEMS-based mirror element 62 meets. The angle of incidence β is in the idle state of the MEMS-based mirror element 62 in a range between 30° and 50° or between 37° and 43° (at 40° +/- 3°). The angle of incidence β is thus the intermediate angle between the incident transmission radiation 32 and the mirror surface of the MEMS-based mirror element 62 in the idle state.

The optical projection arrangement 10 thus implements an i. W. vertical beam arrangement or beam guidance (= emission) of the optoelectronic transmission components 30-1, 30-2, 30-3 with respect to the substrate plane (x-y plane) with a mechanically fixedly coupled MEMS mirror element 60, the mirror plate 62 of the MEMS mirror element 60 is aligned parallel to the substrate plane (of the second partial substrate 20-2), for example in the rest state (=in the non-deflected state or in the zero position).

The optical projection arrangement 10 thus comprises the first and second assemblies 10-1, 10-2, which are arranged on part substrates or substrate sections 20-1, 20-2 of a common carrier substrate 20 that are firmly coupled to one another, the optical projection arrangement 10, also known as photonic arrangement provides a central optical axis 54 (= common optical axis) whose center is directed towards a moveable MEMS mirror plate 62 . The optical projection arrangement 10 comprises, for example, the transmission arrangement 30 with a plurality of semiconductor-based light sources 30-1, 30-2, 30-3, the lens arrangement (lens plane) 40 with a plurality of lens elements 40-1, 40-2, 40-3 and the deflection prism 50. The semiconductor-based light sources 30-1, 30-2, 30-3 have a light exit direction or emission direction pointing away from the carrier substrate 20, the lens arrangement 40 for collimating the divergent radiation 32-1, 32-2, 32-3 of the optoelectronic light sources 30-1, 30-2, 30-3 is formed.

The deflection prism 50 now has the property of guiding the different transmission beams 32-1, 32-2, 32-3 provided by the light sources 30-1, 30-2, 30-3 at different wavelengths and coupling them out at a coupling-out angle α. the guided transmission radiation 32 of the optoelectronic transmission components 30-1, 30-2, 30-3 impinging on the movably suspended MEMS-based mirror surface 62 at the angle of incidence β.

This structural arrangement of the individual elements of the optical projection arrangement 10, i. H. of the optoelectronic transmission components 32-1, 32-2, 32-3, the lens arrangement 40, the prism arrangement 50 and the MEMS mirror arrangement 60 and their geometric alignment and assignment to each other, an extremely compact (geometric) structure with a small volume and small footprint (foot print) of the optical projection assembly 10 can be obtained.

The optical projection arrangement 10, which can be implemented in the form of a combined RGB scanner unit, can be used, for example, for data and image projection in mobile applications, such as in a headset for an AR or VR application as smart glasses (data glasses, augmented reality glasses and/or virtual reality glasses or helmet). The optical projection arrangement 10 can, for example, also be operated in the interior of vehicles and can also be used with other wavelengths for spectroscopic applications in medicine, biology, agriculture or plant breeding and waste management. Other areas of application are also possible as a pulsed beam source for LIDAR object detection. In addition, applications in the area of local UV radiation are possible, for example for paint curing and sterilization.

According to one exemplary embodiment, a light source 32-# with a transmission radiation in the near infrared range (NIR=850 nm to 1550 nm) can also be integrated, for example when using the optical projection arrangement 10 as an RGB scanner unit for data and image projection in mobile applications . Such a light source with a transmission radiation in the near infrared range (NIR = 850 nm to 1550 nm) can be used, for example, in an application for data and image projection in a mobile application to recognize a hand in the image and reach for a virtual one , projected object back to the application processor via an IR camera. So you can touch pictures and objects move or make inputs by grasping a projected image.

According to an exemplary embodiment of the optical projection arrangement, the prism arrangement 50 and the MEMS mirror arrangement 60 can be arranged geometrically in relation to one another such that the common optical axis 54 of the decoupled (common) transmission radiation 32 of the optoelectronic components 30 passes through the center point 62-1 of the mirror element 62 (the mirror plate) runs. For example, the prism arrangement 50 and the MEMS mirror arrangement 60 can be arranged geometrically relative to one another such that the emitted transmission radiation 32 of the optoelectronic transmission components 30 is arranged rotationally symmetrically around the center point of the mirror plate 62 . The common optical axis can therefore run through the center point of the mirror plate 62 and can be arranged in a rotationally symmetrical manner about this mirror plate 62 .

The alignment or deflection of the common transmission radiation 32-1, 32-2, 32-3 can thus be obtained extremely precisely in the desired spatial direction (within the deflection range of the mirror element 62) by means of the deflection of the mirror element 62 caused by the control signal S. Furthermore, a relatively large deflection range of the common transmission radiation 32 can be achieved by means of the controlled deflection of the mirror element 62.

According to an exemplary embodiment of the optical projection arrangement 10, the lens arrangement 40 can be fixed in a defined focal position with respect to the transmission radiation 32-1, 32-2, 32-3 of the transmission components 30-1, 30-2, 30-3 by means of a lens holder structure 42. Thus, the individual lens elements 40-1, 40-2, 40-3 can each be arranged and fixed in a defined focus position with respect to the assigned transmission component 30-1, 30-2, 30-3. Furthermore, the prism arrangement 50 can be arranged on or on the frame structure 44 and fixed to the same. The prism arrangement 50 can thus be arranged and fixed on the first partial substrate (carrier substrate) 20 - 1 by means of the frame structure 44 .

According to an exemplary embodiment of the optical projection arrangement, the lens holder structure 42 can be formed in a frame structure 44 or as part of the frame structure 44 . The frame structure 44 can be formed with peripheral (e.g. vertically formed and opaque) side walls 44-1 (at least) laterally optically closed to the outside. In this way, for example (at least in sections), an optical channel separation between the transmission radiation 32-1, 32-2, 32-3 of the transmission components 30-1, 30-2, 30-3 up to the coupling into the prism arrangement 50 can be obtained.

Furthermore, the prism arrangement 50 can also be arranged (=fixed) on the first partial substrate 20 - 1 of the carrier substrate 20 by means of the frame structure 44 . According to an exemplary embodiment of the optical projection arrangement, the frame structure 44 can therefore provide a mechanically fixed connection (=fixing) of the carrier substrate 20 to the lens arrangement 40 and the prism arrangement 50 .

According to exemplary embodiments, beam combination prism 50 can therefore rest on frame structure 44, which forms an optically closed frame with peripheral walls 44-1 to the extent that these are designed to be non-transparent for the respective transmission radiation 32-1, 32-2, 32-3. This frame structure 44 is mechanically firmly connected, for example, to the carrier substrate 20 and the prism 50, with the prism 50 completely covering the frame structure 44, for example (= vertically covering). The mechanical fastening can be carried out, for example, by bonding with low-emission adhesives, by means of low-melting solder materials or by a mechanical press connection.

The lens holder structure 42 within the frame structure 44 is designed in such a way that the focal position of the individual collimating lenses 40-1, 40-2, 40-3 or an integrated multiple lens 40 can be changed by vertical displacement and fixed in a specific focal position. This positional fixation on the frame structure 44 can be achieved by an adhesive (UV-curing adhesive), by a soldering material, glass frit, solder or by mechanical clamping. Optionally, polarization plates 46 (retarder plates) can be arranged or integrated in the lens holder structure 44 below or above the lens elements 40-1, 40-2, 40-3 in order to transmit the radiation 32-1, 32-2, 32-3 for the im To provide prism 50 located dichroic coatings 50-1, 50-2, 50-3 with a suitable pre-polarization.

According to an exemplary embodiment of the optical projection arrangement 10, the prism arrangement 50 and the MEMS mirror arrangement 60 can be arranged geometrically in relation to one another such that a (minimum) lateral distance A (the lower edge 52-1) of the decoupling surface 52 of the prism arrangement 50 is too the center point 62-1 of the mirror element 62 (mirror plate) is less than 12 times the value of the structural height H (=thickness) of the prism arrangement 50.

Depending on the selected geometry (angle of inclination) of the prism decoupling surface 52, the off coupling angle α vary. The MEMS mirror plate 62 may be located closer or slightly farther from the bottom edge 50-4 of the prism 50 accordingly. If one takes, for example, the construction height H of the prism 50 as a unit of measurement, the mirror plate 62 (or its center point 62-1) in this arrangement and orientation is no further than 12 such units of measurement H (12*H) from the lower edge 52- 1 of the prism decoupling surface 52 (lateral) removed. The distance A denotes, for example, the direct distance (=direct connecting line) from the lower edge 52-1 of the prism arrangement 50 to the center point of the mirror plate 62, with the length A' representing the lateral component (parallel to the x-axis) of the distance A.

According to an exemplary embodiment of the optical projection arrangement 10 , the mirror element 62 can be arranged in a tilted (tilted) state (in a preferred tilt) in the direction of the prism arrangement 50 . For example, the mirror arrangement 60 can be placed and fixed on a wedge 24 or the second substrate section 20-2 can have a wedge-shaped elevation 24 in order to obtain the inclined (pre-tilted) structure of the mirror arrangement (in the direction of the prism arrangement).

In some applications it may be desirable to tilt the mirror arrangement 60 with a preferred inclination in the direction of the prism 50 and thus the area that can be actively irradiated from the "Field of View" (= field of view) of the mirror scanner 10 in the direction of the orthogonal axis in relation to the carrier substrate 20 to align This can be formed by an underlying wedge-shaped molding 24 or by constructing the mirror 60 on the second substrate section 20-2, which is designed correspondingly inclined. will.

According to an exemplary embodiment of the optical projection arrangement 10, the optoelectronic transmission components 30-1, 30-2, 30-3 can be embodied as semiconductor-based light sources, e.g. LEDs or laser diodes for an RGB transmission radiation 32. Furthermore, the semiconductor-based light sources 30-1, 30-2, 30-3 can be arranged, for example, as an integrated bare die arrangement on the first partial substrate 20-1. possibly the semiconductor-based light sources 30-1, 30-2, 30-3 can already be provided with integrated collimation lenses 40-1, 40-2, 40-3 or have additional integrated collimation lenses.

According to a further exemplary embodiment, the semiconductor-based light sources 30-1, 30-2, 30-3 can also be integrated pre-packaged in a common housing or individual housings, and if necessary again with the integrated collimation lenses 40-1, 40-2, 40 -3 be provided.

In the case of the 1 In the exemplary embodiment of the optical projection arrangement 10 described, edge-emitting laser diodes or superluminescence diodes 30-1, 30-2, 30-3 (arranged to radiate upwards here) can be used, which make it possible to generate higher beam powers. The laser diodes or emitters 30-1, 30-2, 30-3 can be built on a common submount 34, which is also used for electrical contacting in addition to heat dissipation. This embodiment is also applicable to vertically emitting emitters (VCSEL, LED, micro-LED, quantum dots, etc.). This indirect construction of the at least one light source 30 with the submount 34 is used, for example, for CTE adaptation (CTE=coefficient of thermal expansion) between the light source and the substrate and also, for example, as a heat spreader for the semiconductor-based light source(s).

According to a further exemplary embodiment, the semiconductor-based light sources 30-1, 30-2, 30-3 (e.g. the laser diodes) can also be constructed directly on the carrier substrate 20-1 or the carrier substrate 20, for example without a submount 34 (see, for example, also 4 , 6 and 7 ).

According to a further exemplary embodiment, the semiconductor light sources 30-1, 30-2, 30-3 can also be constructed on ceramic submounts 34 (with an Al ₂ O ₃ , AlN, Si ₃ N ₄ material or another ceramic material). to improve heat dissipation and absorb mechanical stress. The submounts can carry either only one light source or multiple light sources. By metallizing the submounts, e.g. around a 90° edge, it is also possible to construct and contact edge-emitting laser diodes (ELED = edge-emitting LED) and superluminescence light-emitting diodes (SLED) in such a way that their radiation is directed upwards (= vertically to substrate plane = xy plane) is released. In some cases, for example in the case of low optical power, the semiconductor light sources 30-1, 30-2, 30-3 can also be built up and contacted directly on the carrier substrate 20.

The carrier substrate 20 (20-1 + 20-2) can, for example, have a printed circuit board material or a thermally conductive and electrically insulating ceramic material with corresponding interconnect and pad metallizations or can also (e.g. for a gas-tight design) have a thermally conductive ceramic material low thermal expansion coefficients, such as Al ₂ O ₃ , AIN, SI ₃ N ₄ , LTCC, HTCC or a semiconductor material (eg silicon), have or consist of the same.

According to an embodiment of the optical projection assembly 10, a kupplungför Mige (dome-shaped) glass cap 70 may be joined to the second partial substrate 20-2.

The MEMS mirror arrangement 60 can, for example, be surrounded by a dome-shaped cover 70, e.g. a glass cap, which is transparent to the transmission radiation 32. According to one exemplary embodiment, the dome-shaped glass cap 70 can also protect the MEMS mirror arrangement 60 from the outside world (=environmental atmosphere) or also hermetically shield it.

According to an exemplary embodiment of the optical projection arrangement 10, the transparent cover 70 can have an optically effective coating 72, e.g. The optically effective coating 72 can be provided at least in regions on the radiation passage surfaces of the transparent cover 70 .

The cover 70 (e.g. dome-shaped glass cap) of the mirror 60 is therefore provided with an anti-reflection coating 72 on both sides, for example, in order to reduce scattered reflections. The dome geometry is preferably rotationally symmetrical, with a slight elliptical base with a ratio of the longitudinal to the transverse axis of up to 1:0.8 being possible. The cover 70 is, for example, at least as high above the mirror surface 62 as corresponds to a diameter D of the movably suspended mirror plate 62 and no higher than half the diameter G/2 of the glass cap 70 itself, measured at the lower inner area of the bulging cap area.

Due to the selected geometry of the cover or glass cap 70, any reflections can be scattered and not focused in the image area. The wall thickness of the cover 70 in the optically irradiated area is preferably so thin and uniform that the optical influence on the beam divergence is negligible, i.e. a divergence of less than 0.3°, for example. For this purpose, the cover 70 is not made thicker than 200 μm, 120 μm or 60 μm in this area.

As explained above, the transparent cover 70 is designed, for example, as a dome-shaped glass cap or glass dome, but the cover can also have a geometric configuration that differs from a hemisphere. An elliptical or oval peripheral line (parallel to the x-y plane) or an elliptical or oval cross-sectional line (parallel to the x-z plane) can also be provided (at least in sections) for the dome-shaped cover. The diameter of the cover 70 can be, for example, in a range from 2 mm to 16 mm and from about 3 mm to 5 mm and about 4 mm, while the height of the cover 70 above the mirror center 62-1 is in a range from 1 mm to 8 mm and about 1.5 mm. The mirror diameter D, i.e. the diameter of the deflectable part of the MEMS mirror 62, can be in a range from 0.5 mm to 4 mm or from 1 mm to 1.4 mm.

Due to the thin walls of the transparent cover 70, there is little interaction of the cover 70 with the transmitted radiation 32 of the projection arrangement 10, so that when the transmitted radiation 32 passes through the optically transparent material of the cover 70, there is a small change in the parallelism, wavelength and intensity of the transmitted radiation 32 done.

The following is now an example of a possible embodiment in the previous reference to 1a-e described optical projection arrangement 10 shown.

The transmission arrangement 30 can be configured, for example, as a VCSEL emitter (VCSEL=vertical-cavity surface-emitting laser) on a (common) submount 34 in a linear arrangement along an optical axis 54 with the collimation lenses 40-1, 40-2, 40- 3, possibly polarization plates 46, and a beam combination prism 50, which, due to its shape, guides the (e.g. pulsed) light beam 32 relatively steeply onto the MEMS mirror 62. For example, the MEMS mirror 62 is mounted on the same carrier substrate 20 as the light sources 30-1, 30-2, 30-3. The carrier substrate 20 can have silicon, for example, although various printed circuit board materials and ceramics can also be considered. Depending on the substrate 20 and in particular in the case of low laser powers, the use of a submount 34 is not absolutely necessary. The mirror 62 is protected, for example, by the glass window 70 or hermetically capped, it being possible for a defined internal atmosphere to be enclosed in the glass window 70 with a hermetic capping. The dome-shaped geometry of the glass cap 70 can vary in the height of the half-shell.

According to an exemplary embodiment, the second partial substrate 20-2 can also be gas-tight and have the same material or the same combination of materials as the first partial substrate 20-1. Thus, the dome-shaped (dome-shaped) glass cap 70 can be hermetically joined to the second sub-substrate 20-2 to form a hermetically sealed housing, e.g. a hermetic shield and/or encapsulation (encapsulation), for the MEMS mirror assembly 60 from the ambient atmosphere.

In the optical projection arrangement 10, which is based on the side view of FIG 1a was described, it is now also shown that all light sources 30-1, 30-2, 30-3 can be controlled, with the transmission radiation 32-1, 32-2, 32-3 being emitted either only short light pulses or the beam emission being longer stops and the performance can be varied. The prism 50 has special interface coatings (= boundary surface coatings) 50-1, 50-2, 50-3 for beam deflection and beam combination. A broadband antireflection coating 56 is applied to the exit surface 52 of the prism 50, for example.

The cover element 38 can be designed in such a way that, as part of a laser housing, it encloses a defined inner atmosphere together with the carrier substrate 20 as the base, which usually consists of a water- and hydrocarbon-free gas composition at normal pressure, e.g. nitrogen/oxygen at approx. 1000 mbar +- 100 mbar. Other pressures or priority filling gases are also conceivable.

In the optical projection arrangement 10, which is based on the plan view of FIG 1b was described, it is now also shown that for each of the light sources (e.g. laser diodes) 30-1, 30-2, 30-3 an additional light-sensitive element (e.g. a photodiode) 31-1, 31-2 , 31-3 can be provided. This additional photodiode 31-1, 31-2, 31-3 can be arranged for power monitoring for the radiation sources 30-1, 30-2, 30-3, for example, adjacent to the respectively assigned radiation source 30-1, 30-2, 30-3 be. For example, the photodiode 31-1, 31-2, 31-3 can be arranged or mounted next to the respective laser diode 30-1, 30-2, 30-3 in order to detect the existing scattered radiation of the associated laser diode. Since the frame structure 44 has, for example, side walls 41-1 that are optically closed to the outside, an optical channel separation between the transmission components 30-1, 30-2, 30-3 can be achieved, so that crosstalk of the transmission components is avoided and the respective photodiodes only the scattered radiation of the assigned transmission components. The photodiodes can, for example, have an edge length in the size of 400 μm to 700 μm and can therefore easily be arranged adjacent to the transmission components 30-1, 30-2, 30-3.

According to this exemplary embodiment, the additional photodiode 30-1, 30-2, 30-3 can therefore be integrated in such a way that a small proportion of the emitted radiation 32-1, 32-2, 32-3 of the respective transmission component 30-1, 30- 2, 30-3 falls on the associated photodiode 31-1, 31-2, 31-3 in order to implement power monitoring. The performance monitoring of the transmission components 30-1, 30-2, 30-3 serves to readjust any deterioration in the performance of the transmission components 30-1, 30-2, 30-3 over time, e.g. B. for a stable white balance, for function control and / or for a protective circuit to maintain laser safety.

According to a further exemplary embodiment, the beam removal to the photodiode can also be arranged, for example, in front of the MEMS mirror 62 or also behind the MEMS mirror 62, preferably on or close to the optical axis 54. The beam deflection can be realized, for example, via an angular prism (beam pickup) or a light guide structure that lies outside the field of view used for the actual projection (field of view) and is deliberately irradiated at certain angular positions of the mirror. In this way, the mirror function, in particular the mirror amplitude, can also be checked electronically and readjusted if necessary, for example to compensate for deteriorations in the defined internal atmosphere in the mirror housing 60, 70 (eg the enclosed vacuum) over time. The increase in attenuation associated with the impairment of the defined internal atmosphere in the glass window 70 leads to an increased electrical power consumption which otherwise could not be monitored directly. Checking the mirror movement is useful, for example, for the process of switching on the optical projection arrangement 10 (the RGB scanner) and in particular against the background of the operator's eye safety.

According to a further embodiment, for so-called pico-projection arrangements, a second (further) photodiode (PD) 31-4 e.g. with a lens element 40-4 with optical alignment can be arranged pointing towards a viewer (operator) in order to prevent the user looks directly at the MEMS mirror 62. If this further photodiode 31-4 is illuminated by back-reflection at the viewer, the projection system 10 can be brought into operation within a very short time, e.g. B. ≤ 1 µs, is switched off.

In the following, some essential aspects of the optical projection arrangement 10 according to the invention are discussed again 1a-e summarized again.

Exemplary embodiments thus relate to a photonic arrangement 10 combined on a common gas-tight carrier substrate 20 (20-1, 20-2) along an optical central axis 54 with the center point on a movable MEMS mirror plate 62 with one or more semiconductor-based light sources 30- 1, 30-2, 30-3, e.g. ELED (edge emitting LED), VCSEL (VCSEL = vertical-cavity surface-emitting laser), LED, SLED (Superlu minescence LED), QLED (quantum dot LED = quantum dot LED), whose light emission direction points away from the carrier substrate 20, a hermetically joined cover 38 with an optical transmission window 38-3, a lens arrangement 40 for collimating the divergent radiation, a deflection prism 50 with the property of guiding the various beams at different wavelengths and coupling them out at an angle α, with the beam 32 hitting a movably suspended MEMS-based mirror surface 62 at an angle β, which is hermetically shielded from the outside world by a dome-shaped glass cap 70 . The angle α is in a range between 20° and 40°, preferably at 27°±3°. The angle β is in a range between 30° and 50°, preferably at 40°±3°. The common optical axis 54 passes through the center point of the mirror plate 62 and can be arranged in a rotationally symmetrical manner around this mirror plate 62 .

The beam combination prism 50 ends on the beam outlet side with an exit surface 52 pointing away from the carrier substrate 20 . The terminating surface 53 of the prism 50 at the opposite end can be designed differently, e.g. with an attached square terminating end to protect the mirror surface, provided that the 45° mirror surface 50-1 for beam deflection is not mechanically or optically impaired as a result. The beam combination of different wavelengths through the prism 50 is not limited to the visible range (VIS = visible) and can be extended to both the near UV range and the near infrared range, i.e. the device can be used for the UV-VIS ranges , UV-VIS-NIR, VIS-NIR or UV-NIR can be constructed with appropriate emitters 30-# and a suitably specified beam combining prism 50. The wavelength range accessible with standard materials for this device extends from about 300 nm to about 2650 nm. This range can be extended to about 20 to about 3000 nm by using quartz window and prism materials, but would preferably not be so capped MEMS mirror 60 used. In any case, this wide range requires special anti-reflection coatings 56, 72 and, if necessary, a special mirror coating of the MEMS mirror surface 62. The UV and IR extension range is particularly interesting for spectroscopic applications for molecular excitation, but can also be used for object detection .

AF32 glass with a very flat (plateau-shaped) transmission characteristic or alternatively Borofloat 33 (BF33) with a similar transmission characteristic can be used as the material for the cover element 38 or at least the transmission window 38 - 3 of the cover element 38 .

The beam combination prism 40 rests on the frame structure 44 (with the lens holder structure 42), which, with peripheral walls 44-1, forms a frame structure 44 that is optically closed at least to the outside. This frame structure 44 is mechanically firmly connected to the carrier substrate 20 and the prism 50, the prism 50 completely covering the frame structure 44, for example. The method of mechanical attachment can be based on an adhesive bond. The lens holder structure 42 within the frame structure 44 is designed in such a way that the focal position of the individual collimating lenses 40-1, 40-2, 40-3 or an integrated multiple lens 40 can be changed by vertical displacement and fixed in a specific focal position. This positional fixation can be performed by a UV-curing adhesive. Other methods, such as mechanical clamping, can also be used. Optional polarization plates 46 (retarder plates) can be integrated in the lens holder 42 below or above the lenses 40-# in order to suitably pre-polarize the radiation 32 for the dichroic coatings located in the prism. The lens assembly, e.g. with UV-hardening adhesive, is also possible directly on the cover 38 with the optical transmission window 38-3, whereby both the lateral position and the focus position can be adjusted by the adhesive connection.

Depending on the selected geometry (angle of inclination) of the prism outcoupling surface 52, the outcoupling angle α varies and the MEMS mirror plate 62 is located correspondingly closer to or slightly further away from the lower edge of the prism 50. If the installation height H of the prism 50 is taken as the unit of measurement, then the mirror plate 62 in this device is located, for example, no further than 12 (=12 H) such units of measurement H from the lower edge of the prism decoupling surface 52 . The dome-shaped glass cap 70 of the MEMS mirror 60 is provided with an anti-reflection coating 72 on both sides, for example, in order to reduce scattered reflections. The dome geometry is preferably rotationally symmetrical (although a slightly elliptical base with a ratio of the longitudinal to transverse axes of up to 1:0.8 is also possible) and at least as high above the mirror surface 62 as corresponds to a diameter D of the movably suspended mirror plate and not higher than half the diameter G (=G/2) of the glass cap 70 itself, measured at the lower inner area of the bulging cap area 70. Due to the selected geometry of the glass cap 70, any reflections can be scattered and not focused in the image area. The wall thickness of the glass cap 70 in the optically irradiated area is preferably made so thin and uniform that the optical influence on the beam divergence is negligible. For this purpose, the glass cap in the sem area not thicker than 200 microns, preferably not thicker than 140 microns.

In special applications, it can be advantageous to tilt the mirror 62 with a preferred inclination in the direction of the prism 50 and thus to align the area that can be actively irradiated by the “field of view” of the mirror scanner in the direction of the orthogonal axis in relation to the carrier substrate 20. This can be carried out by placing a wedge-shaped molding 24 underneath or by constructing the mirror 60 on an optionally second, inclined substrate 24 .

It is possible to construct the semiconductor light sources 30-# on ceramic submounts 34, such as Al20 3 , AlN, SbN4, or other ceramics, in order to improve heat dissipation and absorb mechanical stress. The submounts 34 can carry either only one light source 30-# or multiple light sources 30-#. By metallizing the submounts around a 90° edge, it is also possible to construct and contact edge-emitting laser diodes (ELED) and superluminescent light diodes (SLED) in such a way that their radiation is emitted upwards. In special cases, in particular in the case of low optical power, the semiconductor light sources 30 -# can also be built up and contacted directly on the gas-tight carrier substrate 20 . The gas-tight carrier substrate 20 (20-1 and/or 20-2) has, for example, a thermally conductive ceramic material with a low coefficient of thermal expansion, such as Al ₂ O ₃ , AlN, Si ₃ N ₄ , LTCC, HTCC, or silicon.

According to an exemplary embodiment, the MEMS mirror assembly 60 can also have a structure other than a dome-shaped glass cover structure 70, with the hermetic sealing of the MEMS mirror assembly 60 being optional. For quasi-static mirrors 60, a vacuum is not (absolutely) necessary for operation.

The combined RGB scanner unit is used, for example, for data and image projection in mobile applications but also in the interior of vehicles and can be operated with other wavelengths for spectroscopic applications in medicine, biology, agriculture or plant breeding and waste management. Further areas of application as a pulsed beam source for LIDAR object detection are possible. In addition, applications in the area of local UV radiation are possible, for example for paint curing and sterilization.

The use of the hermetic housing process (see below) for individual elements with an optically detecting or optically emitting function is also very diverse.

2 shows an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to a further embodiment. The differences or the different configurations of the optical projection arrangement 10 from FIG 2 compared to the embodiment of 1a-e shown. Therefore, the above description of the 1a-e according to the following description of the embodiment of FIG 2 be applied, with the technical effects resulting from the differences being presented in the following.

So shows 2 an exemplary cross-sectional view of the optical projection arrangement 10 with the plane of the drawing parallel to the xz plane. The optical projection arrangement 10 now has, for example, the first assembly 10-1, which is arranged on the first partial substrate 20-1, and the second assembly 10-2, which is arranged on the second partial substrate 20-2. The first assembly 10-1 of the optical projection arrangement 10 comprises the transmission arrangement 30 with the plurality of optoelectronic (semiconductor-based) transmission components 30-1, 30-2, 30-3, the gas-tight cover element 38, the lens arrangement 40 and the prism arrangement 50. According to the embodiment of FIG 2 the lens arrangement 40 is fixed in the defined focus position on the gas-tight cover element 38, for example glued. The second subassembly 10-2 of the optical projection arrangement 10 now comprises the MEMS mirror arrangement 60 with a movably suspended, deflectable MEMS-based mirror element 62 on the second partial substrate 20-2.

In the case of the 2 In the exemplary embodiment of the optical projection arrangement 10 described, edge-emitting laser diodes or superluminescence diodes 30-1, 30-2, 30-3 (arranged to radiate upwards here) can be used, which make it possible to generate higher beam powers. The laser diodes 30-1, 30-2, 30-3 can be built on individual AIN submounts 34, which are also used for electrical contacting in addition to heat dissipation. By metallizing 36 the submounts around a 90° edge, it is also possible to construct and contact edge-emitting laser diodes (ELED) and superluminescence light-emitting diodes (SLED) in such a way that their radiation is directed upwards (= vertical to the substrate plane = xy plane ) is delivered. In the case of low optical power, the semiconductor light sources 30-1, 30-2, 30-3 can also be built up and contacted directly on the carrier substrate 20, for example.

Some essential aspects of the optical projection arrangement 10 according to the invention from FIG 2 summarized again.

Embodiments thus relate to an optical projection arrangement 10 based on vertically emitting laser diodes (VCSEL) 30-#. The lenses 40-# are glued to the hermetically joined glass cover 38 in the focal position. The division into an area 20 - 1 , 38 that is hermetically sealed against gas exchange and an open area largely reduces restrictions with regard to the joining materials that can be used and materials for the optics assembly in the open area. The gas-tight first carrier substrate 20-1 and the gas-tight cover element 38 hermetically joined thereto thus form the hermetic (=gas-tight) primary housing (=cavity) around the optoelectronic components 30 (3-1, 30-2, 30-2).

The so-called lens carrier (= frame structure 44 with lens holder structure 42) does not need to enclose a defined working atmosphere in this area division and has only a mechanical carrier function and can act as an optical shield against scattered radiation to the outside. In the cavity of the hermetically sealed area 20-1, 38 are the semiconductor light sources 30-# (at least one, but there can also be a plurality) on individual submounts, a common submount 34 or in direct mounting technology on the carrier substrate 20, for whose construction and connection technology, for example, does not use organic materials. Rather, these structures can be realized by metallic connection techniques, ie soft-soldered connections based on tin or indium-based soft solders or eutectic soldering, for example in the AuSn system. Other connection techniques based on sintering technology, for example with silver-based sintering pastes, are also possible. These metal connection techniques mentioned can also be used for the frame sealing of the glass cover or silicon-glass cover 38 or alternative cover variants with an optical transmission window 38-3. These alternative cover variants can have a milled metal frame or deep-drawn metal sheets 38 with a hermetically inserted glass window 38-3 (see e.g 5 ).

3 shows an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to a further embodiment. The differences or the different configurations of the optical projection arrangement 10 from FIG 3 compared to the embodiment of 1a-e and 2 shown. Therefore, the above description of the 1a-e and 2 according to the following description of the embodiment of FIG 3 be applied, with the technical effects resulting from the differences being presented in the following

So shows 3 an exemplary cross-sectional view of the optical projection arrangement 10 with the plane of the drawing parallel to the xz plane. The optical projection arrangement 10 now has, for example, the first assembly 10-1, which is arranged on the first partial substrate 20-1, and the second assembly 10-2, which is arranged on the second partial substrate 20-2. The first assembly 10-1 of the optical projection arrangement 10 comprises the transmission arrangement 30 with the plurality of optoelectronic (semiconductor-based) transmission components 30-1, 30-2, 30-3, the gas-tight cover element 38, the lens arrangement 40 and the prism arrangement 50. According to the embodiment of FIG 3 the lens arrangement 40 is fixed in the defined focus position on the gas-tight cover element 38, for example glued. The second subassembly 10-2 of the optical projection arrangement 10 now comprises the MEMS mirror arrangement 60 with a movably suspended, deflectable MEMS-based mirror element 62 on the second partial substrate 20-2.

In the case of the 3 In the exemplary embodiment of the optical projection arrangement 10 described, edge-emitting laser diodes or superluminescence diodes 30-1, 30-2, 30-3 (arranged to radiate upwards here) can be used, which make it possible to generate higher beam powers. The laser diodes 30-1, 30-2, 30-3 can be built on individual AIN submounts 34, which are also used for electrical contacting in addition to heat dissipation. By metallizing 36 the submounts around a 90° edge, it is also possible to construct and contact edge-emitting laser diodes (ELED) and superluminescence light-emitting diodes (SLED) in such a way that their radiation is directed upwards (= vertical to the substrate plane = xy plane ) is delivered. In the case of low optical power, the semiconductor light sources 30-1, 30-2, 30-3 can also be built up and contacted directly on the carrier substrate 20, for example.

According to exemplary embodiments, the frame structure 44 can therefore form a frame that is optically closed to the outside, insofar as the wall material is formed to be non-transparent for the respective transmission radiation 32-1, 32-2, 32-3. The gas-tight cover element 38 can have a separating element 38-4, for example, in order to form two partial cavities 38-A, 38-B for optical channel separation of the semiconductor light sources 30-1 and 30-2, 30-3.

Some essential aspects of the optical projection arrangement 10 according to the invention from FIG 3 summarized again.

Exemplary embodiments thus relate to an optical projection arrangement 10 with a glass-silicon cover 38 with a double cavity 38-A, 38-B. The cavity height H ₃₈ is determined by the silicon frame 38-1 of the cover 38 and is not limited to a standard silicon wafer thickness of 725 μm. The cavity height H ₃₈ can be adapted to special requirements of the optical structures in the cavity 20, 38 by using particularly thick silicon wafers or a stacked structure. Both the method for the production of glass covers 38 and for the production of silicon-glass covers 38 allow the formation of multi-cavities 38-A, 38-B, ... in a cover 38, which allow optical channel separation and if necessary to realize a separation of the atmospheres. By using getter materials in a selected cavity, reactive air gases (nitrogen, oxygen, carbon monoxide, carbon dioxide, hydrogen and water) can be locally bound and removed from the enclosed atmosphere.

4 shows an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to a further embodiment. The differences or the different configurations of the optical projection arrangement 10 from FIG 4 compared to the embodiment of 1a-e , 2 and 3 shown. Therefore, the above description of the 1a-e , 2 and 3 according to the following description of the embodiment of FIG 4 be applied, with the technical effects resulting from the differences being presented in the following

So shows 4 an exemplary cross-sectional view of the optical projection arrangement 10 with the plane of the drawing parallel to the xz plane. The optical projection arrangement 10 now has, for example, the first assembly 10-1, which is arranged on the first partial substrate 20-1, and the second assembly 10-2, which is arranged on the second partial substrate 20-2. The first assembly 10-1 of the optical projection arrangement 10 comprises the transmission arrangement 30 with the plurality of optoelectronic (semiconductor-based) transmission components 30-1, 30-2, 30-3, the gas-tight cover element 38, the lens arrangement 40 and the prism arrangement 50. According to the embodiment of FIG 4 the lens arrangement 40 is fixed in the defined focus position on the gas-tight cover element 38, for example glued. The second subassembly 10-2 of the optical projection arrangement 10 now comprises the MEMS mirror arrangement 60 with a movably suspended, deflectable MEMS-based mirror element 62 on the second partial substrate 20-2.

According to one exemplary embodiment, the frame structure 44 can therefore form a frame that is optically closed to the outside, insofar as the wall material is formed to be non-transparent for the respective transmission radiation 32-1, 32-2, 32-3. The gas-tight cover element 38 can have a separating element 38-4, for example, in order to form two partial cavities 38-A, 38-B for optical channel separation of the semiconductor light sources 30-1 and 30-2, 30-3.

As in 4 is shown as an example, the semiconductor-based light sources 30-1, 30-2, 30-3 (e.g. laser diodes) can also be constructed directly on the carrier substrate 20-1 or the carrier substrate 20 without a submount 34. This version is particularly suitable for vertically emitting emitters (VCSEL, LED, micro LED, etc.). In the 4 shown arrangement without submount 34 is on all previously shown embodiments in the 1a-b , 2 and 3 applicable.

5 shows an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to a further embodiment. The differences or the different configurations of the optical projection arrangement 10 from FIG 5 compared to the embodiment of 1a-e , 2 , 3 and 4 shown. Therefore, the above description of the 1a-e , 2 , 3 and 4 according to the following description of the embodiment of FIG 5 be applied, with the technical effects resulting from the differences being presented in the following

So shows 5 an exemplary cross-sectional view of the optical projection arrangement 10 with the plane of the drawing parallel to the xz plane. The optical projection arrangement 10 now has, for example, the first assembly 10-1, which is arranged on the first partial substrate 20-1, and the second assembly 10-2, which is arranged on the second partial substrate 20-2. The first assembly 10-1 of the optical projection arrangement 10 comprises the transmission arrangement 30 with the plurality of optoelectronic (semiconductor-based) transmission components 30-1, 30-2, 30-3, the gas-tight cover element 38, the lens arrangement 40 and the prism arrangement 50. According to the embodiment of FIG 5 is the lens arrangement 40 in the defined focus position on the gas-tight cover element ment 38 fixed, eg glued. The second subassembly 10-2 of the optical projection arrangement 10 now comprises the MEMS mirror arrangement 60 with a movably suspended, deflectable MEMS-based mirror element 62 on the second partial substrate 20-2.

In the embodiment of 5 the hermetic cover element 38 has, as a further alternative cover variant, for example a milled metal frame 38-1 or deep-drawn metal sheets 38-1 with a hermetically inserted glass window 38-3.

Embodiments thus also relate to an optical projection arrangement 10 with a metal-glass cover 38 with a hermetic edge seal 38-1, 38-2 and a hermetically inserted glass window 38-3.

6 shows an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to a further embodiment. The differences or the different configurations of the optical projection arrangement 10 from FIG 6 compared to the embodiment of 1a-e and 2-5 shown. Therefore, the above description of the 1a-e and 2-5 according to the following description of the embodiment of FIG 6 be applied, with the technical effects resulting from the differences being presented in the following

So shows 6 an exemplary cross-sectional view of the optical projection arrangement 10 with the plane of the drawing parallel to the xz plane. The optical projection arrangement 10 now has, for example, the first assembly 10-1, which is arranged on the first partial substrate 20-1, and the second assembly 10-2, which is arranged on the second partial substrate 20-2. The first assembly 10-1 of the optical projection arrangement 10 comprises the transmission arrangement 30 with the plurality of optoelectronic (semiconductor-based) transmission components 30-1, 30-2, 30-3, the gas-tight cover element 38, the lens arrangement 40 and the prism arrangement 50. According to the embodiment of FIG 6 the lens arrangement 40 is fixed in the defined focus position on the gas-tight cover element 38, for example glued. The second subassembly 10-2 of the optical projection arrangement 10 now comprises the MEMS mirror arrangement 60 with a movably suspended, deflectable MEMS-based mirror element 62 on the second partial substrate 20-2.

As in 6 As further exemplified, an outer cap or housing 64 may be provided for the projection assembly 10, the housing 64 being disposed on the substrate 20 and surrounding the first and second assemblies 10-1, 10-2. In the area of the second subassembly 10 - 2 of the optical projection arrangement 10 , an optical exit window 66 is arranged in the outer housing 64 adjacent to the MEMS mirror arrangement 60 with the glass dome 70 . The optical exit window 66 is transparent to the transmission radiation 32 in order to let the transmission radiation 32 coming from the mirror arrangement 60 through to the outside. The optical (optically transparent) exit window 66 has dimensions, for example, in order to release the area (field of view) that can be actively irradiated by the field of view of the mirror scanner 10 . The outer cap 64 is provided, for example, to provide further protection and/or hermetic shielding of the entire optical projection arrangement from the surrounding atmosphere.

7 shows an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to a further embodiment. The differences or the different configurations of the optical projection arrangement 10 from FIG 7 compared to the embodiment of 1a-e and 2-6 shown. Therefore, the above description of the 1a-e and 2-6 according to the following description of the embodiment of FIG 7 be applied, with the technical effects resulting from the differences being presented in the following

So shows 7 an exemplary cross-sectional view of the optical projection arrangement 10 with the plane of the drawing parallel to the xz plane. The optical projection arrangement 10 now has, for example, the first assembly 10-1, which is arranged on the first partial substrate 20-1, and the second assembly 10-2, which is arranged on the second partial substrate 20-2. The first assembly 10-1 of the optical projection arrangement 10 comprises the transmission arrangement 30 with the plurality of optoelectronic (semiconductor-based) transmission components 30-1, 30-2, 30-3, the gas-tight cover element 38, the lens arrangement 40 and the prism arrangement 50. According to the embodiment of FIG 7 the lens arrangement 40 is fixed in the defined focus position on the gas-tight cover element 38, for example glued. The second subassembly 10-2 of the optical projection arrangement 10 now comprises the MEMS mirror arrangement 60 with a movably suspended, deflectable MEMS-based mirror element 62 on the second partial substrate 20-2.

Thus, according to the further exemplary embodiment of the optical projection arrangement 10 of FIG 7 For example, the mirror element 62 may be arranged in a tilted (tilted) state (in a preferred tilt) toward the prism array 50 . For example, the mirror arrangement 60 can be placed and fixed on a wedge 24 or the second substrate section 20-2 can have a wedge-shaped elevation 24 in order to obtain the inclined (pre-tilted) structure of the mirror arrangement (in the direction of the prism arrangement).

In some applications it may be desirable to tilt the mirror arrangement 60 with a preferred inclination in the direction of the prism 50 and thus the area that can be actively irradiated from the "Field of View" (= field of view) of the mirror scanner 10 in the direction of the orthogonal axis in relation to the carrier substrate 20 to align This can be formed by an underlying wedge-shaped molding 24 or by constructing the mirror 60 on the second substrate section 20-2, which is designed correspondingly inclined.

This arrangement with the pre-tilted mirror arrangement 60 can be provided, for example, in order to allow the transmission beam 32 to strike the mirror element 62 from above as steeply or perpendicularly as possible (e.g. ideally perpendicularly) and (ideally) not to cause any shadows to be cast during its beam guidance. In order to come as close as possible to this implementation, the pre-tilted arrangement of the mirror arrangement 60 results in the steepest possible angle of incidence β of the transmission beam 32 on the mirror element 62, with the scanned beam 32 also being relatively far from the lower one when it exits the glass dome (dome) 70 The edge of the coupling element 70 removes this passage. It can thereby be achieved that the thickness of the glass material of the glass dome 70 , which increases towards the lower edge of the glass dome 30 , does not exert any optical disruptive influences on the beam 32 . Furthermore, the projected image produced by the beam 32 is less laterally shifted. In both cases, the mirror plate 62 can be aligned parallel to the assembly substrate 20 in the rest position.

A device with a laterally inclined MEMS mirror 60 can be provided, for example, in order to be able to adjust the angular position of the irradiatable area more orthogonally to the carrier substrate.

As in 7 is also shown by way of example, an outer cap or housing 64 can optionally be provided for the projection arrangement 10, with the optional housing 64 being arranged on the substrate 20 and surrounding the first and second assemblies 10-1, 10-2. In the area of the second subassembly 10 - 2 of the optical projection arrangement 10 , an optical exit window 66 is arranged in the optional outer housing 64 adjacent to the MEMS mirror arrangement 60 with the glass dome 70 . The optical exit window 66 is transparent to the transmission radiation 32 in order to let the transmission radiation 32 coming from the mirror arrangement 60 through to the outside. The optical (optically transparent) exit window 66 has dimensions, for example, in order to release the area (field of view) that can be actively irradiated by the field of view of the mirror scanner 10 . The optional outer cap 64 is provided, for example, to provide further protection and/or hermetic shielding of the entire optical projection arrangement from the ambient atmosphere.

8th shows an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to a further embodiment. The differences or the different configurations of the optical projection arrangement 10 from FIG 8th compared to the embodiment of 1a-e and 2-7 shown. Therefore, the above description of the 1a-e and 2-7 according to the following description of the embodiment of FIG 8th be applied, with the technical effects resulting from the differences being presented in the following

So shows 8th an exemplary cross-sectional view of the optical projection arrangement 10 with the plane of the drawing parallel to the xz plane. The optical projection arrangement 10 now has, for example, the first assembly 10-1, which is arranged on the first partial substrate 20-1, and the second assembly 10-2, which is arranged on the second partial substrate 20-2. The first assembly 10-1 of the optical projection arrangement 10 comprises the transmission arrangement 30 with the plurality of optoelectronic (semiconductor-based) transmission components 30-1, 30-2, 30-3, the gas-tight cover element 38, the lens arrangement 40 and the prism arrangement 50. According to the embodiment of FIG 8th the lens arrangement 40 is fixed in the defined focus position on the gas-tight cover element 38, for example glued. The second subassembly 10-2 of the optical projection arrangement 10 now comprises the MEMS mirror arrangement 60 with a movably suspended, deflectable MEMS-based mirror element 62 on the second partial substrate 20-2.

This in 8th illustrated gas-tight cover element 38 can, for example, with the below in 12 illustrated manufacturing method or process flow for the production of glass cover substrates are produced. That Cover element 38 has, for example, a (single) homogeneous material or glass material and is hermetically sealed (gas-tight) joined to substrate 20 or to first partial substrate 20 - 1 .

9 now shows an exemplary flowchart of a method 100 for manufacturing the optical projection arrangement 10 according to an embodiment, wherein reference is made to the in FIGS 1a-e and 2-8 illustrated elements and assemblies reference is made.

According to one exemplary embodiment, the method 100 for producing the optical projection arrangement 10 includes a step 110 of arranging a first assembly 10-1 on a gas-tight first partial substrate 20-1. The step 110 of arranging also comprises a step 112 of arranging an optoelectronic component (e.g. transmission component) 30-# on the first partial substrate 20-1, with at least part of the transmission radiation 32 of the optoelectronic component 30 having a main emission direction in a range of +-30° to a vertical of the first partial substrate 20-1, and also a step 114 of hermetically joining a gas-tight covering element 38 to the first partial substrate 20-1 in order to provide a hermetically sealed housing for the optoelectronic component 30, the covering element 38 has a material that is transparent to the transmission radiation, at least in the area of the main emission direction.

The step of arranging 110 further comprises a step 116 of arranging a lens assembly 40 stationary with respect to the cover member 38 for collimating the z. B. divergent transmission radiation 32 of the optoelectronic component 30 and also a step 118 of arranging a prism assembly 50, z. B. with deflection and beam combination functionality, fixed with respect to the cover element 38 or on the cover element 38, the prism arrangement 50 being designed to guide the collimated transmission radiation 32 of the optoelectronic component and at a beam angle, e.g. B. a first angle α, relative to a decoupling surface 52 of the prism arrangement 50 acting as a deflection prism. The radiation angle α can be in a range between 20° and 40° or 27°+−3°, for example.

The method 100 further includes a step 120 of arranging a second assembly 10-2 on a second partial substrate 20-2. The step 120 of arranging further comprises a step 122 of arranging a, e.g. B. with a control signal controllable, MEMS mirror assembly 60 with a movably suspended and, z. B. with the control signal, deflectable MEMS-based mirror element 62 (mirror surface) on the second partial substrate 20-2, the prism arrangement 50 and the MEMS mirror arrangement 60 being arranged geometrically to one another in such a way that the emitted transmission radiation 32 (transmission beam) is below an angle of incidence β impinges on the movably suspended MEMS-based mirror element 62, the angle of incidence β in the rest state of the MEMS-based mirror element being in a range between 30° and 50° or at 40° +/- 3°. The angle of incidence β on the mirror surface 62 of the MEMS mirror element 60 can be adjusted by deflecting the MEMS mirror element 62 .

According to an exemplary embodiment, the optoelectronic component 30 has a plurality of semiconductor-based light sources 30-#, e.g. B. LEDs or laser diodes for an RGB transmission radiation 32, wherein the method 100 further comprises a step 130 of arranging the semiconductor-based light sources 30 - # as an integrated bare-die arrangement on the first sub-substrate 20-1, wherein the semiconductor-based light sources 30-# may optionally have integrated collimation lenses.

According to a further exemplary embodiment, the semiconductor-based light sources 30-# can be arranged directly on the first partial substrate 20-1 (carrier substrate) without a submount, for example (step 132).

According to a further embodiment, an optically effective coating 56, z. an anti-reflection coating, etc., may be placed on the coupling and/or coupling-out surface 52 of the prism assembly (step 134).

According to a further exemplary embodiment, the prism arrangement and the MEMS mirror arrangement 60 can be arranged geometrically in relation to one another (step 136) in such a way that the (common) optical axis 54 of the emitted transmission radiation 32 of the optoelectronic component 30 passes through the center point of the mirror element or the mirror plate 62 runs.

According to a further exemplary embodiment, the prism arrangement 50 and the MEMS mirror arrangement 60 can be arranged geometrically relative to one another (step 138) such that the emitted transmission radiation 32 of the optoelectronic component 30 is arranged rotationally symmetrically around the center point of the mirror plate 62.

According to a further embodiment, the lens assembly 40 can be fixed by means of a lens holder structure 42 as part of a holding structure 44 in a defined focus position with respect to the gas-tight cover element 38 (step 140), the prism assembly 50 on / on the Frame structure 44 is arranged with the lens holder structure 42 and the frame structure 44 with peripheral walls 44-1 forms a (at least) optically closed frame structure 44 to the outside. The lens arrangement 40 can serve to compensate for the deflection of the transmission radiation 32 caused additionally by the dome-shaped or dome-shaped glass cap 70 . The lens holder structure 42 within the frame structure 44 is designed, for example, in such a way that the focus position of the respective collimation lens or an integrated multiple lens 40 can be changed by vertical displacement and fixed in a specific focus position.

According to a further exemplary embodiment, the lens arrangement 40 can be fixed or glued to the gas-tight cover element 38 in the defined focal position (step 142), the prism arrangement 50 being arranged firmly on the first partial substrate or carrier substrate 20-1 by means of the frame structure.

According to a further exemplary embodiment, the prism arrangement 50 and the MEMS mirror arrangement 60 can be arranged geometrically with respect to one another (step 144) such that a z. B. minimum lateral distance of the lower edge of the decoupling surface 52 of the prism assembly 50 to the center of the mirror element or the mirror plate 62 is less than 12 times the value of the structural height H (=thickness) of the prism assembly 50.

According to a further exemplary embodiment, the mirror element 62 can be arranged in a tilted or tilted state in the direction of the prism arrangement 50 (step 146). The mirror element 62 can therefore be arranged with a preferred inclination in relation to the prism arrangement 50 . For this purpose, the mirror arrangement can be placed and fixed, for example, on a wedge 24 in order to obtain the inclined, pre-tilted structure of the mirror arrangement 60 in the direction of the prism arrangement 50 .

According to an exemplary embodiment, the first and second sub-substrates 20-1, 20-2 can be firmly coupled to one another (step 148). This can be done, for example, by directly flanging on the first and second partial substrates 20-1, 20-2. This makes it possible for the MEMS mirror arrangement 60 to be decoupled from the light source and to be constructed on its own substrate (partial substrate 20-2).

According to a further exemplary embodiment, a dome-shaped or dome-shaped glass cap 70 can be hermetically joined to the second partial substrate 20-2 (step 150) in order to create a hermetically sealed housing, e.g. for hermetic shielding and/or encapsulation) for the MEMS mirror assembly 60 from the ambient atmosphere.

According to one embodiment, an optically effective coating 72, e.g. e.g., an anti-reflective coating, etc., may be placed on the inside and/or outside surface on the dome-shaped glass cap 70 (step 152). The optically effective coating 72 can be applied, for example, at least to the beam passage surfaces of the dome-shaped glass cap 70 .

According to a further exemplary embodiment, a reactive atmosphere can be arranged in the hermetically sealed housing for the optoelectronic component 30 with exclusively organic substances (step 154). The hermetically sealed housing for the optoelectronic component 30 can also be designed to be hermetically sealed against the ingress of water vapor.

10 now shows an exemplary flowchart or flow chart 200 for the production of gas-tight cover elements 38 according to a further embodiment.

According to an exemplary embodiment, in the method 200 for producing a cover substrate 90, e.g. for housing one or a plurality of optical components, at step 210 a molded substrate 80 having a structured surface area 80-1 with a recess 82 and a cover substrate 90, comprising a glass material is provided. At step 220 , the cap substrate 90 is bonded to the mold substrate 80 to form a sealed cavity 84 between the cap substrate 90 and the mold substrate 80 via the depression 82 . At step 230, the cap substrate 90 and the mold substrate 80 are annealed to reduce the viscosity of the glass material of the cap substrate 90, further providing a positive pressure in the sealed cavity 84 relative to the ambient atmosphere to based on the reduced viscosity of the glass material of the cap substrate 90 and the excess pressure in the sealed cavity 84 compared to the surrounding atmosphere, to bring about a defined bulging of the glass material of the cover substrate 90, starting from the sealed cavity 84 up to a stop surface 94-1 spaced apart from the cover substrate, in order to form a cover substrate 90 with at least one cover element 38 to get. At step 250 , the stop member 94 and the mold substrate 80 are removed from the molded cover substrate 90 , the molded cover substrate 90 forming the cover substrate with the at least one cover member 38 .

According to one embodiment, the cover substrate 90 has a stiffening structure 92 on the first or second main surface area 90-1, 90-2 of the cover substrate 90, wherein in step 220 of arranging the cover substrate 90 on the structured surface area 80-1 of the mold substrate 80 the cover substrate 90 is placed on the patterned surface area 80-1 of the mold substrate 80 with the reinforcement element 92 in alignment to place the reinforcement element 92 on the cover substrate 90 in an aligned position with the structured surface area 80-1 of the mold substrate 80.

According to a further exemplary embodiment, the cover substrate has two opposing stiffening structures 92 which are arranged on the cover substrate 90 on opposite side surfaces 90-1, 90-2 of the cover substrate 90 and opposite one another at a position so that, in step 220 of arranging the cover substrate 90 on the structured surface area 80-1 of the mold substrate 80 to arrange the cover substrate 90 in alignment on the structured surface area 80-1 of the mold substrate 80 in order to arrange the reinforcement element 92 facing the mold substrate 80 in an aligned position with the structured surface area of the mold substrate 80.

According to an exemplary embodiment, the method further comprises the following steps: removing the stiffening structure or stiffening structures 92 after the step of annealing and providing an overpressure from the formed cover substrate 90, and/or singulating the formed cover substrate in order to obtain singulated cover elements 38.

In particular shows 10 based on the exemplary flowchart 200, the production of a cover substrate that can be used, for example, to house one or a plurality of optical or optoelectronic components, the cover substrate produced having the cover element or cover element 38 with the window region 38-3 that is optically transparent to the transmission radiation .

At step 210, a mold substrate 80, e.g. B. a semiconductor or silicon wafer, provided with a structured surface area 80-1, that is, the mold substrate 80 is provided with at least one depression or recess 82. Furthermore, the cover substrate 90, e.g. B. a glass wafer provided. The cover substrate 90 further includes at the first and second major surface regions 90-1, 90-2 thereof, respectively opposite reinforcing members 92 aligned with each other. The reinforcement members 92 are arranged in pairs opposite each other on the first and second main surface areas 90-1, 90-2 of the cover substrate 90, for example. The reinforcement elements 92 on the opposite main surface regions 90-1, 90-2 of the covering substrate 90 are arranged, for example, congruently or overlapping one another with regard to a vertical projection.

According to an exemplary embodiment, the mold substrate 80 can be embodied as a semiconductor substrate (semiconductor wafer or silicon wafer) and the covering substrate 90 can be embodied as a glass substrate or glass wafer.

Molded substrate 80 is, for example, a molded substrate having a shape, contour, or topography such as a B. a topographically structured substrate. The mold substrate 80 can be used, for example, as a semiconductor wafer, e.g. B. a silicon wafer, be formed, wherein the surface structure or topography of the mold substrate can be obtained extremely precisely by means of semiconductor processing steps or silicon processing steps. Furthermore, mechanical surface treatment methods, e.g. B. for CNC milling, to form the structure in the mold substrate 80 can be used. Furthermore, in addition to semiconductor materials such. B. Si, SiGe, for example, other materials such. B. AlN, SiC, high-melting glass (z. B. Schott AF32), can be used for the mold substrate, which are suitable for a photolithographic or mechanical surface processing process for forming the structure in the mold substrate 80 and further in the annealing operations during the process of manufacture of the cover substrate are sufficiently thermally stable.

The covering substrate 90 has, for example, a (single) homogeneous material or glass material in order to form the shaped covering substrate 90 as a covering substrate or glass cap with the individual covering elements 38 therefrom with the following production steps.

Also at step 210, the cover substrate 90 is placed on the patterned surface area 80-1 of the mold substrate 80 in alignment to form the reinforcing elements 92, e.g. B. silicon reinforcement elements, of the cover substrate 90 in an aligned or predetermined position with the structured surface region 80-1 of the mold substrate 80 to arrange. For example, the second major surface area 90-2 of the cover substrate 90 attached to the mold substrate 80, ie, to the raised area Chen of the structured surface area 80-1 of the mold substrate 80, applied, be flat or planar and thus be formed without recesses or depressions.

Furthermore, the reinforcing elements on the second main surface area 90-2 of the cover substrate 90 are respectively arranged within the depressions 82 of the mold substrate 80, that is, between the raised areas of the structured surface area 80-1 of the mold substrate 80.

At step 220, the cover substrate 90 is then bonded to the mold substrate 80, e.g. B. by anodic bonding hermetically to form at least one sealed cavity 84 between the cover substrate 90 and the mold substrate 80 . In this case, the indentation 82 arranged in the mold substrate 80 or the indentations 82 arranged in the mold substrate 80 then form the at least one closed cavity 84 between the cover substrate 90 and the mold substrate 80.

According to an exemplary embodiment, the hermetic bonding 220 of the cover substrate 90 to the mold substrate 80 is performed in an atmosphere with a defined atmospheric negative pressure in order to confine a defined atmospheric pressure in the closed cavities 84 .

In preparation for the actual production process (steps 210, 220), a glass wafer 90 (=cover substrate) prepared with reinforcement elements 92 is thus provided. In addition, in preparation, the molding substrate 80, e.g. B. a silicon mold substrate, with one-sided cavities and channel structures 82 (= recesses or depressions). The glass wafer 90 is aligned with the mold substrate 10 and, for example, bonded anodically in a defined atmosphere in order to enclose a (defined) gas pressure in the cavities and channel structures 84 .

According to an embodiment of the method 200, the cap substrate 90 and/or the mold substrate 10 are configured to form the closed cavity 84 with a plurality of closed cavity areas 84 between the cover substrate 90 and the mold substrate 10, wherein the closed cavity areas 84 are fluidly separated from each other or wherein there are further gas exchange channels 84-1 between the cavity areas 84 which are closed off from the ambient atmosphere in order to fluidly connect them to one another in order to obtain a common defined atmospheric pressure in the connected cavity areas 84.

At a (subsequent) step 230, the cover substrate 90 and the mold substrate 10 are then tempered, that is, subjected to a temperature treatment or heated (heated) in order to reduce the viscosity of the glass material of the cover substrate 90. Furthermore, at step 130, an overpressure in the (at least one) closed cavity or the closed cavity areas 84 compared to the surrounding atmosphere is provided to based on the reduced viscosity of the glass material of the cover substrate 90 and the overpressure in the closed cavity 84 compared to the surrounding Atmosphere a defined arching, e.g. B. glass out or deforming, the glass material of the cover substrate 90 starting from the closed cavity 84 to a distance from the cover substrate 90 stop surface 94-1 of a stop element 94 to effect. The defined bulging of the glass material of the cover substrate 90 due to the overpressure in the closed cavity 84 and the reduced viscosity of the glass material can also be referred to as blowing out or deforming the glass material.

The defined bulging of the glass material of the covering substrate 90 thus results in a shaped covering substrate 90 with (at least) one cover element or covering element 38 (=bulging or deformation). The resulting bulging or deformation of the formed covering substrate (=cover substrate) 90 is thus referred to as covering element 38 . According to one embodiment, the step 230 of annealing can be carried out in a temperature range above 650° C., e.g. B. be carried out between 650 ° C and 955 ° C or between 650 ° C and 750 ° C.

According to an exemplary embodiment of flow chart 200, cover substrate 90 is bulged or blown out to a height h (minus the thickness of reinforcement elements 92) in the step of annealing and providing an overpressure 32 in the region of closed cavity 84, with height h being the vertical distance of the stop surface 94-1 of the stop 94 to the first main surface region 90-1 of the cover substrate 90 is predetermined.

According to an exemplary embodiment of the flow chart 200, the area of the stop surface 94-1 of the stop element 94 opposite the cavity 84 or the cavity areas 84 is planar and parallel to the main surface area 90-1 of the cover element 90 formed in order to form a planar ceiling area 38-3 of the cover element 38 in the step 230 of annealing and providing an overpressure.

According to a further exemplary embodiment of the flowchart 200, the region of the stop surface 94-1 of the stop element 94 opposite the cavity 84 or the cavity regions 84 can also be inclined (locally inclined) with respect to the main surface region 90-1 of the cover substrate 90 in order to have a inclined ceiling area 38-3 of the cover element 38 to form.

According to an exemplary embodiment, the stop element 94 can be implemented as a reusable tool and can have a non-stick coating 94 - 1 (as or on the stop surface 94 - 1 ) for the glass material of the cover substrate 90 . The glass flow process 230 can thus be carried out in a pressure-controlled furnace 96 .

After the cooling and the removal of the shaped cover substrate 90 with the shaped substrate 80 from the oven 50, the stop element 90, the shaped substrate 80 and the reinforcement elements 92 are now removed from the shaped cover substrate 94 in a subsequent step 240, with the shaped cover substrate 90 now being the Cover substrate with the at least one cover element or cover element 38 forms. The cover substrate 90 can e.g. B. for housing one or a plurality of optical or optoelectronic components 30 are used.

According to one embodiment, the step 240 of removing the stop member 94, the mold substrate 80 and the reinforcement members 92 may be performed using an etching process, e.g. B. a silicon or semiconductor etch of the semiconductor or silicon material of the mold substrate 80 and the reinforcement elements 92 can be performed. If the stop element 94 is not designed as a reusable tool, the stop element 94 can also be removed by means of a semiconductor etching process.

According to one embodiment, since the cap substrate 90 is a single homogeneous material, e.g. a glass material, the molded cover substrate 94` is also unitary (in one piece) and made of a single homogeneous material, e.g. B. the glass material formed.

In an (optional) subsequent step 250, the process flow 200 can also apply or deposit a metallization 86 as a (continuous) frame structure or as a sealing frame on the second main surface area on the non-bulged areas (base areas) 38-2 of the cover elements 38 of the molded cover substrate (lid substrate) 94`.

Further according to an embodiment, at step 250, an anti-reflective coating 88 may be applied to an inside and/or outside region, e.g. B. the radiation exit area or the ceiling area 38-3, the cover element 38 of the formed cover substrate 94 'are applied or deposited.

In the optional step 250, the sealing frame 86 and/or the optional anti-reflection coating(s) 88 can thus be deposited onto the cover substrate 94`. Optical assemblies can then be hermetically sealed at the wafer level with this glass cover substrate 94`.

In an optional subsequent step 260, the process flow 200 may further include singulating the formed cover substrate 94' to obtain singulated cover members or lid members 38. FIG. The separating 260 of the glass cover substrate 94' can take place, for example, by sawing or laser cutting. With the isolated cover elements 38, optical assemblies can be hermetically sealed at the individual substrate level or at the wafer level by individual encapsulation.

Some essential aspects and method steps of the process sequence of the production method 200 according to the invention from FIG 10 summarized.

The manufacturing method according to the invention 200 of 10 enables an improved packaged radiation-emitting component to be manufactured particularly advantageously at the wafer level. If a mold substrate 80 is used to form cover substrates 90 by means of a glass flow process, optically flat glass covers 38 can be produced with the aid of stiffening structures 92, with which sensitive radiation sources 30 can then be capped in a hermetically sealed manner.

• - Bereitstellen eines ersten Substrats 90 und eines zweiten Substrats 80,
• - Bereitstellen mindestens eines Verstärkungselements 92,
• - Erzeugen eines Stapels durch Anordnen des mindestens einen Verstärkungselements 92 auf dem ersten Substrat 90, wodurch das Verstärkungselement 92 einen Bereich des ersten Substrats 90 abdeckt,
• - in Kontakt bringen des zweiten Substrats 80 mit dem Stapel 90, 92,
• - Erwärmen und Verformen des ersten Substrats 90 derart, dass zumindest ein Teil des durch das mindestens eine Verstärkungselement abgedeckten Bereichs des ersten Substrats 90 aus der Ebene herausgehoben wird, und/oder dass ein Bereich des ersten Substrats 90 mit dem mindestens einen Verstärkungselement in Kontakt gebracht wird.

The method 200 according to the invention for the production of optical components has, for example, the following method steps:

• - providing a first substrate 90 and a second substrate 80,
• - Providing at least one reinforcement element 92,
• - Creating a stack by arranging the at least one reinforcement element 92 on the first substrate 90, whereby the reinforcement element 92 covers a region of the first substrate 90,
• - bringing the second substrate 80 into contact with the stack 90, 92,
• - Heating and deforming the first substrate 90 in such a way that at least part of the area of the first substrate 90 covered by the at least one reinforcement element is lifted out of the plane, and/or that an area of the first substrate 90 is brought into contact with the at least one reinforcement element will.

The first substrate 90 (=cover substrate) represents the starting or base substrate for the optical component. In order to ensure a high quality of the optical component, in particular the surfaces, the two substrate sides 90-1, 90-2 of the first substrate 90 or their surfaces, which are the starting surfaces z. B. for an optical window or its transmission surfaces 38-3, preferably be executed polished. Correspondingly, the two substrate sides 90-1, 90-2 preferably have a square surface roughness of less than or equal to 25 nm, preferably less than or equal to 15 nm, particularly preferably less than or equal to 5 nm.

The surfaces of an optical window 38-3, through which the radiation 32 used in the application impinges on the optical window and/or is coupled out again, represent the transmission surfaces of an optical window 38-3.

For example, the two substrate sides 90-1, 90-2 of the first substrate 90 are designed to be flat (planar) and/or plane-parallel to one another.

In order to meet optical quality requirements, the two substrate sides 90-1, 90-2 of the first substrate 90 preferably have a flatness deviation of less than a quarter of the wavelength of the electromagnetic radiation 32 used in the application, wavelengths from the ultraviolet to the infrared being particularly preferred Wavelength range (for example between about 200 nm and about 15 microns) apply. As a result, flatness deviation values of less than 180 nm are advantageous for longer-wave light, for example with a wavelength of 720 nm. When using shorter-wave light with wavelengths below 440 nm, the demands on the substrate sides increase, so that values for the flatness deviation of less than 110 nm are preferred.

The plane-parallelism deviation of the two substrate sides of the first substrate has values of less than 10 μm, for example. With such surface properties, the first substrate 90 offers very good prerequisites for an optical component that causes, for example, smaller deviations and a smaller beam expansion of the optical beam path 32, which leads to less falsification of the optical signals.

Furthermore, the first substrate 90 can have a homogeneous material structure, for example, in order to avoid undesired refractions and/or deflections of the radiation 32 by the optical component produced from the first substrate 90 .

A large number of optical components should be transparent, at least in some areas, usually in their entirety, to the electromagnetic radiation 32 (32-#) used in the application. Most optical applications require the highest possible transparency of these regions 38 - 3 , which are transparent to the electromagnetic radiation 32 used in the application, so that, for example, a laser beam 32 reaches the microsystem 60 with as little influence as possible.

Correspondingly, the first substrate 90 contains glass and/or a glass-like material, for example, at least in partial areas, or the first substrate 90 consists of glass and/or a glass-like material. According to the invention, glass-like materials are substances which, because of their thermodynamic properties (amorphous structure, glass transition temperature), are similar to glasses, although their chemical composition differs from that of silicate glasses. Examples are the artificial glasses or organic vitrodes known in chemistry, such as polymethyl methacrylate (PMMA), polycarbonate and polystyrene.

Preferred glasses (glass materials) are, for example, silicate glasses, in particular borosilicate glasses, since borosilicate glasses are very chemical and temperature resistant. The temperature resistance and insensitivity of borosilicate glasses to sudden temperature fluctuations are a result of their low thermal expansion coefficient. In addition, the transmittance is very high at over 90%, particularly in the wavelength range visible to humans.

In addition to one or more first substrates 90, at least one second substrate (=mold substrate) 80 is provided.

The second substrate 80 preferably contains a semiconducting material at least in partial areas, or the second substrate 80 consists of a semiconducting material. Semiconductor wafers in particular, preferably silicon wafers, are used as the second substrate, as a result of which the mature and easily controllable processes of semiconductor technology, in particular silicon technology, can be used. The second substrate 80 - in particular the area (areas) of the second substrate 80 that (which) is (are) brought into contact with the stack of first substrate 90 and reinforcing element 92 directly or indirectly (e.g. via support structures) - preferably contains high-temperature-resistant Materials, especially graphite, or consists of it. Due to a low tendency to bond with the first substrate 90, in particular with glass, and the resulting low wear, such substrates can be used several times or over a longer period of time (=longer service life).

In the next method step 210, at least one reinforcement element 92 is provided, for example by separating from a reinforcement substrate 92, the reinforcement substrate preferably being designed as a plate or wafer, in particular as a silicon or glass wafer. As a result, a multiplicity of reinforcement elements 92 can be produced from a reinforcement substrate 92 and the processing steps for ensuring the desired strength or thickness of the reinforcement elements 92 can be reduced or optimized.

In a further exemplary embodiment, the reinforcement substrate and/or the at least one reinforcement element 92 consists of or contains a semiconducting material at least in partial regions. One possible material is silicon, since when it is used the mature and easily controllable processes of semiconductor technology, in particular silicon technology, can be used. However, glasses that have a higher melting point than the first substrate 90 (e.g. high-melting glasses) are also suitable, for example, as reinforcement elements 92 and/or reinforcement substrate 92 . Exemplary materials for the reinforcement elements 92 and/or the reinforcement substrate 92 have a thermal expansion coefficient that is as close as possible to the thermal expansion coefficient of the material of the first substrate 90 or is as identical as possible to this. For example, the difference in thermal expansion coefficients should be less than or equal to 5 ppm/°K, or less than or equal to 1 ppm/°K. As a result, mechanical stresses that can arise during cooling due to different degrees of contraction of the first substrate 90 and the reinforcing elements 92 and which could lead to damage to the first substrate 90 and/or the reinforcing elements 92 or the optical component can be reduced.

The reinforcement element 92 can be provided in various ways.

The reinforcement member 92 can be manufactured by separating or cutting out from the reinforcement substrate 92 . Preferred separation methods are sawing, laser cutting or laser processing, breaking (possibly with prior scoring) and/or etching. As a result, it can be avoided, for example, that the reinforcing element is produced, for example, by etching a layer deposited on the first substrate, so that comparatively little material removal can be obtained. According to exemplary embodiments, the reinforcement substrate 92 and thus the starting material for the reinforcement element 92 can be used much more effectively by a manufacturing process that takes place before the arrangement of the reinforcement element 92 , for example by sawing, laser cutting, breaking or etching. This and the associated savings in further process steps, such as e.g. resist application, exposure, resist structuring, resist removal, allow the production costs to be reduced.

The production of the reinforcement elements 92 before the arrangement also has the effect that the reinforcement elements 92 can be made from different materials (e.g. from several reinforcement substrates) and with different sizes (e.g. thickness) or shapes and with different properties (e.g. with regard to transparency, reflectivity or absorption behavior). can be provided for the subsequent assembly step. This enables an optimized and flexible adjustment of production to the desired specifications. Furthermore, when the reinforcement element 92 is produced before the arrangement step, the area of the first substrate 90 that is not in contact or brought into contact with the reinforcement element 92 is exposed to a lesser extent to aggressive media such as etching solutions, so that this area can be used later Contacting and / or connection steps can be better preserved or whereby the high surface properties of this area, for example, can be better preserved.

In another embodiment, the gain elements 92 may be arrayed from a single substrate 92 . This substrate 92 is manufactured using established methods such as lithography and etching. For example, this substrate 92 can have or consist of a material that differs from the first substrate 90 bind without changing its optical properties. Separated reinforcing elements 92 can be formed on the first substrate 90 by grinding back the reinforcing element substrate 92 .

A high surface quality (e.g. low roughness, low flatness deviation) of the reinforcement element can preserve a high surface quality of the first substrate or the high surface quality of the reinforcement element can be transferred to the first substrate in the course of heating and shaping in order to achieve a high surface quality for the optical component to be produced guarantee. Furthermore, by arranging, in particular applying, the at least one reinforcement element on the first substrate, a stack is produced, as a result of which the reinforcement element covers or covers a region of the first substrate. In the rim end, this stack of first substrate and reinforcement element is referred to as the "base stack".

The fact that a first layer 90, a first area or a first device is arranged or applied "on" a second layer 80, a second area or a second device can mean here and in the rim end that the first layer 90, the first area 80 or the first device is arranged or applied directly in direct mechanical and/or electrical contact on the second layer 80, the second area or the second device. Furthermore, an indirect contact can also be referred to, in which further layers, areas and/or devices are arranged between the first layer, the first area or the first device 90 and the second layer, the second area or the second device 80 . The reinforcement element 92 can be arranged on the first substrate 90, for example, with a vacuum handler (vacuum suction cup), a gripper (collet) or a pickup tool (combination of vacuum suction cup and gripper), which enables the reinforcement element 92 to be positioned precisely and precisely on the first substrate Ensure substrate 90. In the case of an entire substrate, the adjustment is carried out using a so-called aligner. In this case, the reinforcement element 92 is arranged or applied on the first substrate 90 in such a way that a deformation of the region of the first substrate 90 functioning, for example, as an optical window (38-3) is reduced or prevented. This is achieved, for example, in that at least part of the reinforcing element 92 covers or covers a region of the first substrate 90, which for example later functions as an optical window or as part of an optical window 38-3. In the context of the present exemplary embodiments, this covered region of the first substrate 90 extends to the region of the first substrate 90 that exists between or on the contact surface or boundary surface that exists between the reinforcement element 92 and the first substrate 90, and the parallel projection of this contact surface lies on the opposite substrate side 90-1, 90-2 of the first substrate 90, with the connection vector between a point of the contact surface and its image on the opposite substrate side of the first substrate 90 being parallel to the resultant normal vector of the contact surface, with the resultant normal vector of the contact surface is determined by vector addition of the normal unit vectors of the infinitesimal partial areas of the contact area, which point in the direction of the first substrate 90 . The surface areas of the first substrate 90 that have points in common with the contact area or its image belong to the covered area of the first substrate 90.

The definition of the covered area of the first substrate 90 is based on a stack (base stack/further base stack) as it is present before the deformation of the first substrate 90 according to the present exemplary embodiments. The additional material of the reinforcement element 92 stabilizes and protects the covered area of the first substrate 90 and counteracts deformation. As a result, the high level of flatness, plane parallelism and low surface roughness that is present, for example, in the first substrate 90 provided can be obtained, which is the basis for high-quality optical components 38, and also surfaces, such as transmission surfaces, which cannot be subjected to subsequent processing (for example a polishing step). are accessible, with a high surface quality.

When the at least one reinforcement element 92 is arranged or applied on the first substrate 90, the first substrate 92 and the reinforcement element 90 are connected to one another, for example in a form-fitting and/or material-to-material manner, e.g. by gluing, soldering or bonding, in order to ensure a high degree of positional stability of the reinforcement element 92 the first substrate 90 to ensure. The reinforcement element 92 is expediently arranged on the first substrate 90 in such a way that displacement and/or twisting of the reinforcement element 92 in relation to the first substrate 90 is reduced or prevented. In one embodiment, the at least one reinforcement element 92, for example a silicon chip, is arranged on or connected to the first substrate 90 by anodic bonding, direct bonding, plasma-activated bonding and/or thermal bonding. Especially in the semiconductor industry, these bonding methods are frequently used connection techniques that lead to sta good connections. Such a connection step, such as bonding, preferably takes place in a vacuum, which avoids air inclusions and/or enclosed particles in the connection areas, in particular at the interface between reinforcement element 92 and first substrate 90, and the resulting defects on the surface of the first substrate 90 and thus reduced to the surface of the optical component.

In an exemplary embodiment, the at least one reinforcement member 92 is placed on a positioning means prior to being placed on the first substrate 90 . The positioning means can be equipped with the reinforcement element 92, i.e. the transfer and arrangement of the reinforcement element, for example with a vacuum handler (vacuum suction cup), a gripper (collet) or a pick-up tool (combination of vacuum suction cup and gripper), which ensures a positionally accurate and precise Ensure assembly on the positioning means.

All means, devices and tools that stabilize or keep the reinforcing element 92 in its position are suitable as positioning means. As a result of this stabilization, the handling of the reinforcement element 92 with regard to the further method steps is made considerably easier. For example, the assembly can be carried out under clean room conditions at atmospheric air pressure and a subsequent connection step, e.g. anodic bonding, can take place in another clean room area in a vacuum.

Suitable positioning means are, for example, adhesive bases based on magnetic or electrostatic forces or substrates that can ensure non-positive (friction-increasing layer), material-to-material (e.g. applied adhesive layer) or form-fitting connections (e.g. indentations or recesses).

With a view to a subsequent connection step (e.g. anodic bonding), the positioning means is designed to be electrically conductive, for example. Correspondingly, the positioning means contains or consists, for example, of electrically conductive and/or semiconductive materials such as, for example, silicon. A receiving substrate can be used as an exemplary positioning means. Such a receiving substrate has at least one recess or indentation (receiving indentation) which is designed to receive the reinforcement element 92 and in particular keeps it fixed or adjusted laterally. Since the adjustment of the reinforcement element 92 in this case is mainly ensured by a positive connection between the receiving substrate and the reinforcing element 92, the receiving substrate can be easily removed after the reinforcing element 92 has been arranged on the first substrate 90 by breaking the positive connection in order to Release the base stack thus produced from the first substrate 90 and reinforcing element 92 for further process steps. The receiving substrate can then be used again for the next assembly process and can thus be used several times, which in turn results in a reduction in the manufacturing complexity and manufacturing costs.

In order to prevent the contact of the receiving substrate with the first substrate 90 when placing the reinforcement element 92 on the first substrate 90 and thus the surface quality of the first substrate 90 in the areas which are not intended to be brought into contact with the reinforcement element to preserve further connecting and/or contacting steps or to be able to ensure that the mounting substrate is removed as easily as possible after the reinforcement element 92 has been arranged on the first substrate 90, the mounting recess is preferably designed in such a way that at least one of the reinforcement elements 92 can be removed after it has been arranged on the mounting substrate protrudes beyond the boundary surfaces of the receiving substrate. For example, after arrangement on the receiving substrate, all reinforcement elements 92 protrude beyond the boundary surfaces of the receiving substrate. The at least one reinforcement element can preferably have at least one fixing element or be in a mutually operative relationship (e.g. mechanical, electrostatic and/or magnetic force coupling) with at least one fixing element. The fixing element reduces or prevents, for example after the base stack has been brought into contact with the at least one second substrate 80, displacement and/or twisting of the reinforcing element relative to the first substrate 90 and thus increases the positional stability of the reinforcing element 92. For example, the reinforcing element 92 and the fixing element are mechanically connected to one another in connection in order to be able to guarantee the most stable possible force coupling.

For example, the fixing element is clamped between the base stack and the second substrate 80 in the method step of bringing the base stack into contact with the second substrate 80 . Appropriate contact between the base stack and the second substrate 80 can be ensured by means of suitable receiving grooves, for example in the second substrate 80 , despite the interposed or clamped fixing element. In one configuration, for example, at least part of the fixing element is in contact or connected to a region of the first substrate 90 that lies outside the deflection region or in the contact region after the base stack has been brought into contact with the second substrate 80 . Since this area of the first substrate 90 is not subject to deflection or deformation, it promotes improved force absorption and thus increased positional stability of the reinforcement element 92. For example, the fixing element is produced during the manufacture of the reinforcement element 92, which saves additional production steps. In a further exemplary embodiment, one or more support structures are produced, with the production of the support structure taking place in such a way that the support structure protects the support region, in particular the support surface, of the first substrate 90 and/or as a spacer between the first substrate 90 and the second substrate 80 acts.

The support area is the area of the first substrate 90 that does not experience any deflection, in particular not as a result of deformation, or is supported directly or indirectly by the second substrate 80 during the method. Direct support occurs when the first substrate 90 and the second substrate 80 are brought into contact with one another. In the case of indirect support, for example, one or more layers or layer sequences are arranged between the first substrate 90 and the second substrate 80 . The bearing surface is the surface of the bearing area that faces the second substrate 80 . In the case of a cover to be produced, for example, the supporting surface of the first substrate 90 forms the contact surface of the cover and thus the surface of the cover which is provided for the contact or the connection of the cover to the carrier substrate. The contact surface of the cover and/or the surface of the first substrate opposite the contact surface on the other side of the substrate are preferably in at least one of the substrate planes of the first substrate 90. Accordingly, after the cover 38 has been connected to the carrier substrate 20, the carrier substrate plane and the substrate planes of the first Substrate 90 arranged in parallel, for example. By arranging the overlay structure on the first substrate 90, the high surface quality of the first substrate 90, for example, can be preserved or one or more high-quality surface areas of the overlay structure can be molded onto the first substrate 90 during the method step 230 of heating and shaping, and thus one or more Support areas, such as support surfaces and thus potential contact surfaces of the optical component 38 to be produced, can be realized with high surface quality. Such high-quality surface areas with, for example, low roughness and high flatness enable the use of sophisticated connection techniques, such as anodic bonding, with which stable connections between the optical component 38, e.g. a cover, and the carrier substrate 20 can be produced.

For example, at least one reinforcement element 92 is arranged on each of the two substrate sides of the first substrate 90, with opposing reinforcement elements 92 for example at least partially overlapping. In an exemplary embodiment, such reinforcing elements 92 completely overlap. As a result, the areas of the first substrate 90 covered by them are (particularly) well stabilized and protected from deformation. For example, the reinforcement elements 92 are arranged on the first substrate 90 in such a way that no tilting of the area of the first substrate 90 covered by this reinforcement element 92 is promoted during heating and deformation (step 230). This is achieved, for example, in that both reinforcement elements 92 are arranged centrally in the deflection area of the first substrate 90 .

The deflection area (=curvature) is the unsupported (during heating and deforming at step 230) area of the first substrate 90 (e.g. not by the second substrate 80) which is located between the support areas. A deflection area can be divided into the area of the first substrate 90 covered by the reinforcement element 92 and the deformation area of the first substrate 90 the area of the first substrate 90 covered by the reinforcing member 92 is ensured.

A central arrangement of a reinforcement element 92 in the deflection area is understood in the sense of the exemplary embodiments that the spacing of the reinforcement element 92 from all directions on the adjoining support areas is, for example, the same size. Correspondingly, for a centric force on the deflection area, the distance between the point of application of the resulting force and the contact areas adjacent to the deflection area is the same in all directions. In the case of a non-centric resulting force on a reinforcement element 92, the distance between the point of application and the edges of the reinforcement element 92 is not the same in at least one direction.

In a further method step 220, the base stack 90, 92 is brought into contact with the second substrate 80. FIG. The contacting of Base stack 90, 92 with the second substrate 80 takes place, for example, such that a recess 82 formed in the second substrate 80 forms a cavity 84 between the second substrate 80 and the base stack 90, 92. The cavity 84 may prevent direct contact between the deflection portion of the first substrate 90 and the second substrate 80 prior to heating and deformation (at step 230). Such contact could lead to the deflection region of the first substrate 90 adhering to the second substrate 80, e.g. also indirectly through the reinforcement element 92 arranged on the first substrate 90 adhering to the second substrate 80, and prevent or impede a deformation-related deflection of the first substrate 90 in the deflection region .

Furthermore, a pressure below or above the ambient pressure, in particular the atmospheric air pressure, can be generated in the cavity 84 . Since the cavity 84 is delimited by at least part of the deflection region of the first substrate 90, a pressure generated in the cavity 84 which is below or above the ambient pressure can generate force effects to promote the deformation process. Furthermore, a pressure below or above the ambient pressure, in particular the atmospheric air pressure, can be generated in the cavity 84 . Thus, by means of a pressure generated in the cavity 84 which is below or above the ambient pressure, force effects can be generated to promote the deformation process.

Furthermore, the second substrate 80 should be bonded to the base stack 90, 92 (see step 220). This makes it possible, for example, to produce a cavity 84 that is hermetically sealed from the environment between the base stack 90 , 92 and the second substrate 80 . By performing the bonding process 220 at specific pressures, specific pressure levels in the cavities 84 can be created.

Depending on the composition of the material used for the first substrate 90, the subsequent heating process (step 230) typically takes place at significantly higher temperatures than the preceding joining process (step 220).

For example, temperatures above the softening point of the material to be shaped are used. In the shaping of the first substrate 90, for example, the flow properties of the first substrate 90, such as those present in particular near and above the softening point and/or the melting point, are utilized. The effect of this type of shaping, which is also referred to as glass flow, compared to other shaping or embossing processes, such as glass deep drawing or glass embossing (e.g. blank pressing), consists primarily in the fact that optical components, for example with substrate or wafer expansions, isuch as substrate or wafer diameters greater than or equal to 80 mm, and e.g. greater than or equal to 150 mm, or e.g. greater than or equal to 300 mm, with high surface quality, low surface roughness, high surface evenness and high plane-parallelism of the surfaces of the substrate sides.

Depending on the set pressure in the cavity, the base stack 90, 92 can be pushed out of the plane or pulled in.

In an exemplary embodiment, cavity 84 is sealed at a pressure greater than ambient pressure during processing. In this way, a pressure difference is created between the two substrate sides of the first substrate 90, such as in the deflection area, so that the base stack 90, 92 is pressed out of the plane.

The level is determined by setting an optimal ratio of the pressure trapped in the cavity and the pressure in the process environment. As in the case of the ideal gas equation, the pressures are adjusted in such a way that they are approximately the same in the cavity and in the process environment when the desired blow-out height of the base stack 90, 92 is reached.

Another possibility is to use a deflection limiter 94, which limits the maximum desired deflection caused by deformation. Substrates that are thermally stable above the softening point of the glass can be used as the deflection limiter 94 . For example, the deflection limiter 94 can be used multiple times. The distance height H is set by spacers (the description of the spacers is actually optional).

In a further embodiment, a pressure that is lower than the ambient pressure during processing is enclosed in the cavity. A pressure difference is set between the two substrate sides of the first substrate 90, e.g. in the deflection area, so that the base stack 90, 92 is pressed into the cavity. In this case, the underside of the cavity 84 acts as a boundary.

After the forming process (step 230 - described in both methods) are the Reinforcing elements 92 and the second substrate 80 are completely removed (step 240). For certain applications, however, it can be effective that parts of the reinforcement element 92 or the further reinforcement element 92, for example as a frame-shaped stabilization structure or diaphragm structure, remain on the first substrate 90 or the finished optical component 38.

The finished glass wafer 90' can be bonded as a whole to a device substrate wafer. A further possibility would be to separate the glass wafer 90' and to mount it on the component substrate wafer using a so-called pick-and-place assembly tool.

In an exemplary configuration, at least partial areas of the first substrate 90' are provided with at least one finishing coating 88, for example with an anti-reflection coating, an antistatic coating, a reflection coating and/or an absorption coating, and/or functional surface structures, whereby the functionality of the optical component 38 can be improved.

Refining coatings 88 used by way of example are anti-reflection coatings which, for example, further reduce reflections on a cover 38, in particular on its optical windows 38-3, and thus radiation losses. Such antireflection coatings 88 can be implemented, for example, by layer systems made of magnesium fluoride and titanium oxide, or silicon dioxide and titanium oxide. Furthermore, antistatic coatings, for example, which minimize electrical charging of the optical component, are used. A material suitable for antistatic coatings in optical applications is ITO (indium tin oxide) because it has high electrical conductivity when doped and has high transparency over a wide range of wavelengths.

Sealing frames 86 can be applied to glass cap wafers 90' by various methods. On the one hand as vapour-deposited metallizations with shadow masks, preferably designed as frame structures or as a metal surface with cutouts for the optical windows 38-3. In addition to vaporized metallization, a sputtered metal layer or galvanic deposition on a base metallization can also be considered. Alternatively, a printed and pre-tempered glass frit can be provided as such a frame or continuous coating with recesses for the optical windows.

11 FIG. 3 now shows a further exemplary flowchart or flowchart 300 for the production of gas-tight cover elements 38 according to a further exemplary embodiment. In particular shows 11 Based on the exemplary flow chart 300, the production of a cover substrate that can be used, for example, to house one or a plurality of optical or optoelectronic components 30, wherein the cover substrate produced has the gas-tight cover element or cover element 38 with the optically transparent to the transmission radiation window area 38- 3 has.

At step 310, a mold substrate 80, e.g. B. a semiconductor or silicon wafer, provided with a structured surface area 80-1, that is, the mold substrate is provided with at least one depression or recess 82. The indentations or recesses 82 can also be designed to be continuous (as perforations). Furthermore, a cover substrate 90, e.g. B. a glass wafer provided.

According to one exemplary embodiment, the mold substrate 80 can therefore be embodied as a semiconductor substrate (semiconductor wafer or silicon wafer) and the covering substrate 90 can be embodied as a glass substrate or glass wafer.

In a step 320, the cover substrate 90 is arranged on the structured surface area 80-1 of the mold substrate 80 and connected or joined to the mold substrate, e.g. B. hermetically connected by anodic bonding. That is, the planar glass substrate 90 is anodically bonded to the mold substrate 80 .

At step 330, the mold substrate 80 (e.g., silicon mold substrate) is opened by a grinding process, for example, to open the cavities 84 on the underside. The opening of the mold substrate 80 can also be performed by means of an etching process. According to one embodiment, an anti-reflective coating 88 can also be applied to an inside and/or outside area, e.g. B. the beam exit area or the ceiling area 38-3, the cover element 38 are applied or deposited. The present cover substrate (glass-silicon cover substrate) with the at least one cover element or cover element 38 can now be used to house one or a plurality of optical or optoelectronic components 30 (optical assemblies) at the wafer level.

In an (optional) subsequent step 340, the process flow 300 can also include separating the cover substrate 80, 90 in order to separate cover elements or covers items 38 to get. The separating 340 of the glass-silicon cover 80, 90 can take place, for example, by sawing or laser cutting. With the isolated cover elements 38, optical structures such. B. optical transmitting and / or receiving elements, are hermetically sealed or capped at the individual substrate level or at the wafer level by individual encapsulation.

As is also shown by way of example in step 350, the cover element 38 can also be designed as a multi-cavity cover element (glass-silicon cover) 38 by means of a separating element 38-4. The formation of multi-cavities 38-A, 38-B in a cover element 38 allows, for example, an optical channel separation and, if necessary, a separation of the atmospheres in the individual cavities 38-A, 38-B.

12 FIG. 4 now shows a further exemplary flowchart or flow chart 400 for the production of gas-tight cover elements 38 according to a further exemplary embodiment.

According to an exemplary embodiment, in the method 400 for producing a cover substrate 90, e.g. for housing one or a plurality of optical components, in step 420 a mold substrate 81 with a structured surface area 81-1 having depressions 83 and a cover substrate 91 which comprising a glass material. At step 425, a second major surface portion 91-2 of the cap substrate 91 is bonded to a first major surface portion 81-1 of the mold substrate 81 to form cavities between the cap substrate 91 and the mold substrate 81 closed by the recesses 83. At step 430, the cover substrate 91 and the mold substrate 81 are annealed to reduce the viscosity of the glass material of the cover substrate 91 to cause the glass material to flow into the depressions 83 based on the reduced viscosity of the glass material of the cover substrate 91 to form a shaped cover substrate 91 with at least one cover element 38 to obtain. At step 435, the molded substrate 81 is removed from the molded cover substrate 90, wherein the molded cover substrate 90 forms the lid substrate with the at least one lid member 38.

According to an exemplary embodiment, in step 430 of the annealing, a negative pressure is created in the closed cavity 83 with respect to the surrounding atmosphere in order to support the flow or drawing of the glass material of the cover substrate 91 into the depressions 83 .

According to an exemplary embodiment, a negative pressure or vacuum is sealed in the closed cavity 83 during the bonding 425 in order to obtain a negative pressure in the closed cavity 83 with respect to the surrounding atmosphere in the annealing step 430 in order to prevent the inflow or drawing in of the glass material of the cover substrate 91 in the wells 83 to support.

According to one embodiment, the cover substrate 91 has a stiffening structure 92 on the first main surface area 91-1 of the cover substrate 91, wherein in the step 425 of arranging the cover substrate 91 on the structured surface area 81-1 of the mold substrate 81, the cover substrate 91 is aligned with the reinforcement element 92 is placed on the patterned surface area 81-1 of the mold substrate 81 to place the reinforcement member 92 on the cover substrate 91 in an aligned position between two depressions 83 of the mold substrate 81;

According to an exemplary embodiment, the method 40 further has the following steps: removing 435 the stiffening structure or stiffening structures 92 after the annealing step, and dicing 455 the formed cover substrate 91 in order to obtain diced cover elements 38 .

In particular shows 12 based on the exemplary flowchart 400, the production of a cover substrate that can be used, for example, to house one or a plurality of optical or optoelectronic components (transmitting and/or receiving components), the cover substrate produced having the cover element or cover element 38 with the optically for the transmission radiation 32 has a transparent window area 38-3.

In an optional step 405, a mold substrate 80', e.g. B. a semiconductor or silicon wafer, provided with a structured surface area 80`-1, that is, the mold substrate 80 'is provided with at least one or a plurality of raised structures 82'.

In an optional step 410, a planar glass substrate 91 is anodically bonded to the first mold substrate 80'.

In an optional step 415, the first silicon mold substrate is thinned, for example by a grinding process, to produce stiffening elements 92 on a glass substrate 90. FIG. The stiffening elements 92 are provided, for example, to minimize the surface roughness of the glass material of the cover backing substrate 91 in the glass flow process.

At step 420, a second mold substrate 81, e.g. B. a semiconductor or silicon wafer, manufactured and provided with recessed structures 83 in a first main surface region 81-1.

At step 425, the glass substrate 90 with the reinforcing members 92 is anodically bonded to the second mold substrate 81 (silicon mold substrate) with a vacuum trapped in the cavities 83. FIG.

At step 430 a glass flow process is performed in an annealing furnace (=temperature controlled furnace) 50 with the possibility of creating a positive pressure in the surrounding atmosphere compared to the closed cavity 83 during the flow process. During the glass flow process, the glass material of the glass substrate flows into the recesses or is drawn into the recesses 83 by the enclosed vacuum. Finally, the glass substrate is cooled and removed from the furnace 50. FIG.

At step 435, the material of the mold substrate 81 (the second silicon mold substrate) and the silicon reinforcing elements 92, e.g. B. by means of an etching process removed.

In an optional step 440, a metallization and optionally an antireflection coating 86, 88 can be deposited on the inside and/or outside of the glass substrate 91.

In an optional step 445, the resulting glass substrate 91, that is, the prepared glass cap wafer 91, may be placed on a predetermined substrate wafer 20 to hermetically cap optoelectronic devices 30. FIG.

In an optional step 450, for example, a hermetic joint connection between the cap wafer 91 and the equipped substrate wafer 20 is carried out.

In an optional step 455, the components 95 are singulated at the wafer level in order to obtain singulated optoelectronic transmitting and/or receiving components 95.

At an optional step 460, exemplary devices 95 for detectors and emitters with, for example, an active element are illustrated. These optoelectronic devices are described below in the 13a-b and 14a-b described in more detail.

the 13a-b and 14a-b now show exemplary embodiments for a hermetically housed, optoelectronic component 95 according to further exemplary embodiments which, for example, according to the process flow 400 of FIG 12 can be produced.

The hermetically housed optoelectronic component 95 from 13a FIG. 1 shows, for example, a wire-bonded photodetector 31 that is housed between the carrier substrate 20 and the (eg gas-tight) cover element 38 .

According to an exemplary embodiment of the hermetically housed optoelectronic component 95, the cover element 38 can optionally be formed in such a way that the upper side wall 38-3 is formed optically transparent for the received radiation. The optoelectronic component 95 has, for example, a radiation-sensitive semiconductor component 31, such as. B. an optoelectronic receiving component or a photodiode on.

This in 13b The hermetically housed optoelectronic component shown is in the form of a flip-chip LED, for example, and is housed (eg hermetically) between the carrier substrate and the cover element 38 .

According to an exemplary embodiment of the hermetically housed optoelectronic component 95, the cover element 38 can optionally be designed in such a way that the upper side wall 38-3 is designed to be optically transparent for the transmission radiation. The optoelectronic component 95 has, for example, a radiation-emitting semiconductor component, such as. B. an optoelectronic transmission component.

In the case of the hermetically housed optoelectronic component 95 from 13a-b The cover element 38 can have an optical window 38 - 3 for the photodetectors and semiconductor light-emitting elements including laser diodes 30 . In the case of LEDs in particular, for example, a plurality of LEDs of different wavelengths can be accommodated in the housing 38 . Optionally, a circuit with Zener diodes can also be provided for reverse polarity protection. The carrier substrate 20 for the components 30, which has, for example, integrated vertical feedthroughs (vias) 93, represents part of the housing.

14a FIG. 12 now shows a further exemplary embodiment for a hermetically housed optoelectronic component 32 according to an exemplary embodiment which is produced, for example, using the method 400 described above.

According to an exemplary embodiment of the hermetically housed optoelectronic component 95, the cover element 38 can optionally be designed in such a way that the upper side wall 38-3 is designed to be optically transparent for the transmission radiation. The optoelectronic component 95 has, for example, a radiation-emitting semiconductor component 30, such as. B. an optoelectronic transmission component, and a radiation-sensitive semiconductor component 31, such as. B. an optoelectronic receiving component or a photodiode on.

14a FIG. 10 thus shows an embodiment in which the optoelectronic components 30 are integrated under the cover element 38. FIG. This is suitable, for example, for applications in which one or more additional photodiodes 31 are provided for monitoring the power of the radiation-emitting component 30, for example a laser. In this case, the radiation reflected by an object 2 can be detected by the receiving element 31 .

In 14a a driver EC with the transmission element 30 and a monitor photodiode 31 are thus shown in the cavity. In the 14a The optoelectronic components 30, 31 illustrated can be contacted with a bonding wire having corresponding connection areas on the substrate 20.

14b shows an illustration in which an optoelectronic transmission component is formed, for example, as a flip-chip component 30, with the statements from FIG 14a are equally applicable to the transmit device 30 of Figure 14b.

Since the hermetically sealed optoelectronic component 95 of 14a-b active optical elements 30, 31 can have very small geometries, several of them can also be hermetically encapsulated in such a component 95. In this way, combinations of NIR-VCSEL elements 30 with a photodetector 31 can also be implemented in one housing, since a proximity sensor system can be operated with them, for example. There is therefore the emission of a light pulse with the transmission component 30 and the feedback of reflected radiation, which is measured with a photodiode 31 .

Although some aspects of the present disclosure have been described as features in the context of an apparatus, it is clear that such a description can also be considered as a description of corresponding method features. Although some aspects have been described as features associated with a method, it is clear that such a description can also be regarded as a description of corresponding features of a device or the functionality of a device.

Some or all of the method steps may be performed by (or using) hardware apparatus, such as a programmable pick and place machine with integrated optical sensing, a microprocessor, a programmable computer, or electronic circuitry. In some embodiments, some or more of the method steps may be performed by such an apparatus. Depending on particular implementation requirements, embodiments of the invention may be implemented in hardware, or in software, or at least partially in hardware, or at least partially in software.

In the foregoing Detailed Description, in part, various features were grouped together in examples in order to streamline the disclosure. This type of disclosure should not be interpreted as an intention that the claimed examples have more features than are expressly recited in each claim. Rather, as the following claims reflect, subject matter may lie in less than all features of a single disclosed example. Thus the following claims are hereby incorporated into the Detailed Description, where each claim may stand as its own separate example. While each claim may stand as its own separate example, it should be noted that although dependent claims in the claims refer back to a specific combination with one or more other claims, other examples also include a combination of dependent claims with the subject-matter of each other dependent claim or a combination of each feature with other dependent or independent claims. Such combinations are contemplated unless it is stated that a specific combination is not intended. Furthermore, it is intended that a combination of features of a claim with any other independent claim is also included, even if that claim is not directly dependent on the independent claim.

Although specific embodiments have been illustrated and described herein, it will be apparent to those skilled in the art that a variety of alternative and/or equivalent implementations may be substituted for the specific embodiments shown and illustrated therein without departing from the subject matter of the present application. This anmel This text is intended to cover all adaptations and variations of the specific embodiments described and discussed herein. Therefore, the present application subject matter is limited only by the language of the claims and the equivalent embodiments thereof.

Claims (48)

Optical projection arrangement (10) with the following features: a first assembly (10-1), which is arranged on a gas-tight first partial substrate (20-1), with: - an optoelectronic component (30) arranged on the first partial substrate (20-1), wherein at least part of the transmission radiation (32) of the optoelectronic component (30) has a main emission direction in a range of ± 30° to a vertical of the first partial substrate ( 20-1) has, - a gas-tight covering element (38), which is hermetically joined to the first sub-substrate (20-1) in order to provide a hermetically sealed housing for the optoelectronic component (30), the covering element (38) at least in the area of the main emission direction having a transmission radiation has transparent material, - A lens arrangement (40), which is fixed with respect to the covering element (38), for collimating the transmission radiation (32) of the optoelectronic component (30), and - A prism arrangement (50) which is designed to guide the collimated transmission radiation (32) of the optoelectronic component (30) and to decouple it on a decoupling surface (52), and a second assembly (10-1), which is arranged on a second partial substrate (20-1), with: - a MEMS mirror arrangement (60) with a movably suspended and deflectable MEMS-based mirror element (62), wherein the prism arrangement (50) and the MEMS mirror arrangement (60) are arranged geometrically in relation to one another such that the emitted transmission radiation (32) strikes the movably suspended MEMS-based mirror element (62) at an angle of incidence β, the angle of incidence β in the idle state of the MEMS-based mirror element (62) is in a range between 30° and 50°. Optical projection arrangement (10) according to claim 1 , wherein the prism arrangement (50) is designed to decouple the collimated transmission radiation (32-1, 32-2, 32-3) of the optoelectronic transmission components (30-1, 30-2, 30-3) at a decoupling angle α with respect to . Optical projection arrangement according to claim 1 or 2 , wherein the optoelectronic component (30) has a plurality of optoelectronic components, wherein at least part of the respective transmission radiation of the optoelectronic components has a main emission direction in a range of ± 30 ° to a vertical of the first gas-tight partial substrate. Optical projection arrangement according to one of the preceding claims, wherein the optoelectronic component has at least one semiconductor-based light source with one or a plurality of semiconductor-based light sources, wherein the at least one semiconductor-based light source as an integrated bare die arrangement on the first partial substrate is arranged. Optical projection arrangement according to claim 4 , wherein the at least one semiconductor-based light source is constructed on a submount (34) or is constructed directly on the first partial substrate. Optical projection arrangement according to one of the preceding claims, wherein the optoelectronic component is arranged to have a main emission direction vertical to the first partial substrate. Optical projection arrangement according to one of the preceding claims, wherein the lens arrangement has a plurality of collimation lenses for the optoelectronic component for collimating the transmission radiation of the optoelectronic component. Optical projection arrangement according to one of the preceding claims, wherein the prism arrangement is designed to guide the transmission radiation at one wavelength or at different wavelengths and to couple it out at an outcoupling angle α. Optical projection arrangement according to one of the preceding claims, wherein the prism arrangement has an optically effective coating on the coupling and/or coupling-out surface. Optical projection arrangement according to one of the preceding claims, wherein the prism arrangement and the MEMS mirror arrangement are arranged geometrically relative to one another such that the optical axis of the emitted transmission radiation of the optoelectronic component runs through the center point of the mirror element. Optical projection arrangement according to one of the preceding claims, wherein the Prism arrangement and the MEMS mirror arrangement are arranged geometrically to each other that the coupled-out transmission radiation of the optoelectronic component is arranged rotationally symmetrically around the center of the mirror plate. Optical projection arrangement according to one of the preceding claims, wherein a frame structure with peripheral walls is optically closed to the outside, wherein the lens arrangement is aligned in a defined focal position to the gas-tight cover element by means of a lens holder structure arranged on the frame structure, and wherein the prism arrangement on the Frame structure is arranged. Optical projection arrangement according to one of the preceding claims, wherein the lens arrangement is fixed in a defined focus position on the gas-tight covering element, the prism arrangement being arranged on the first partial substrate by means of a frame structure. Optical projection arrangement according to Claim 13 , wherein the frame structure is mechanically firmly connected to the carrier substrate and the prism arrangement, and wherein the frame structure is optically closed with peripheral walls to the outside. Optical projection arrangement according to one of the preceding claims, wherein the prism arrangement and the MEMS mirror arrangement are arranged geometrically in relation to one another such that a lateral distance between the decoupling surface of the prism arrangement and the center point of the mirror element is less than 12 times the value of the structural height H of the Prism arrangement is. Optical projection arrangement according to one of the preceding claims, wherein the mirror element is aligned parallel to the substrate plane of the second partial substrate in the rest state. An optical projection arrangement according to any one of the preceding claims, wherein the mirror element is arranged in an inclined state towards the prism arrangement. Optical projection arrangement according to Claim 17 , wherein the mirror assembly is placed on a wedge and fixed to obtain the tilted configuration of the mirror assembly. Optical projection arrangement according to one of the preceding claims, wherein the first partial substrate and the second partial substrate are mechanically firmly coupled. Optical projection arrangement according to one of the preceding claims, wherein the first partial substrate and the second partial substrate form a common gas-tight carrier substrate, so that the first assembly and second assembly are arranged on the common gas-tight carrier substrate. Optical projection arrangement according to one of the preceding claims, wherein the gas-tight first carrier substrate is constructed from a thermally conductive ceramic with a low coefficient of thermal expansion or from a semiconductive material. Optical projection assembly according to one of the preceding claims, wherein the second sub-substrate is formed gas-tight, and wherein a dome-shaped glass cap is hermetically joined to the second sub-substrate to form a hermetically sealed housing for the MEMS mirror assembly against the ambient atmosphere. Optical projection arrangement according to Claim 22 , wherein the dome-shaped glass cap has an optically effective coating on the inner and/or outer surface. Optical projection arrangement according to one of the preceding claims, wherein the gas-tight cover element has a side wall area between a base area and a cover area, wherein the cover area of the cover element has the material which is permeable to the transmission radiation of the optical component, and is provided for coupling out the transmission radiation. Optical projection arrangement according to one of the preceding claims, wherein the hermetically sealed housing for the optoelectronic component has a reactive atmosphere with exclusively inorganic substances, and/or wherein the hermetically sealed housing is hermetically sealed against the ingress of water vapor. Method (100) for producing an optical projection arrangement with the following steps: arranging (110) a first assembly on a gas-tight first partial substrate, with: - arranging (112) an optoelectronic component on the first partial substrate, with at least part of the transmission radiation of the optoelectronic component has a main emission direction in a range of ±30° to a vertical of the first partial substrate, - Hermetic joining (114) of a gas-tight cover covering element with the first partial substrate, in order to provide a hermetically sealed housing for the optoelectronic component, the covering element having a material that is transparent to the transmitted radiation at least in the area of the main emission direction, - arranging (116) a lens arrangement fixed with respect to the covering element for collimating the transmitted radiation of the optoelectronic component, and - arranging (118) a prism arrangement on the cover element, the prism arrangement being designed to guide the collimated transmission radiation of the optoelectronic component and to decouple it at a first angle α with respect to a decoupling surface of the deflection prism, the first Angle α is in a range between 20° and 40°, and arranging (120) a second assembly on a second partial substrate, with: - arranging (122) a MEMS mirror arrangement with a movably suspended and deflectable MEMS-based mirror element on the second partial substrate, wherein the prism arrangement and the MEMS mirror arrangement are arranged geometrically in relation to one another in such a way that the emitted transmission radiation hits the movably suspended MEMS-based mirror element at a second angle β, the angle β in the idle state of the MEMS-based mirror element being in a range between 30° and 50°. procedure according to Claim 26 , wherein the optoelectronic component has a plurality of semiconductor-based light sources, further comprising the step of: arranging the semiconductor-based light sources as an integrated bare die arrangement on the first partial substrate. procedure according to Claim 27 , further comprising the following step: arranging the semiconductor-based light sources directly on the first partial substrate. Method according to one of Claims 26 until 28 , further with the following step: arranging an optically effective coating on the coupling and / or decoupling surface of the prism arrangement. Method according to one of Claims 26 until 29 , further with the following step: arranging the prism arrangement and the MEMS mirror arrangement geometrically to one another such that the optical axis of the emitted transmission radiation of the optoelectronic component runs through the center point of the mirror element. Method according to one of Claims 26 until 30 , further with the following step: arranging the prism arrangement and the MEMS mirror arrangement geometrically to one another such that the emitted transmission radiation of the optoelectronic component is arranged rotationally symmetrically about the center point of the mirror plate. Method according to one of Claims 26 until 31 , further with the following step: fixing the lens arrangement by means of a frame structure in a defined focus position with respect to the gas-tight cover element, the prism arrangement being arranged on the frame structure and the frame structure with peripheral walls forming a frame structure which is optically closed to the outside. Method according to one of Claims 26 until 32 , further with the following step: fixing the lens arrangement in a defined focus position on the gas-tight covering element, the prism arrangement being arranged firmly on the first partial substrate by means of a frame structure. Method according to one of Claims 26 until 33 , also with the following step: arranging the prism arrangement and the MEMS mirror arrangement geometrically to each other such that a lateral distance of the decoupling surface of the prism arrangement to the center point of the mirror element is less than 12 times the value of the construction height H of the prism arrangement . Method according to one of Claims 26 until 34 , further comprising the step of: arranging the mirror element in a tilted state toward the prism array. procedure according to Claim 35 , wherein the mirror assembly is placed on a wedge and fixed to obtain the tilted structure of the mirror assembly. Method according to one of Claims 26 until 36 , further comprising the step of: fixedly mechanically coupling the first sub-substrate and the second sub-substrate. Method according to one of Claims 26 until 37 , wherein the second partial substrate is gas-tight, further comprising the step of: hermetically joining a dome-shaped glass cap to the second partial substrate in order to form a hermetically sealed housing for the MEMS mirror arrangement with respect to the ambient atmosphere. procedure according to Claim 38 , further comprising the step of: applying an optically effective coating to the inner and/or outer surface of the dome-shaped glass cap. Method according to one of Claims 26 until 39 , also with the following step: arranging a reactive atmosphere in the hermetically sealed housing for the optoelectronic component with exclusively inorganic substances. Method (200) for producing a cover substrate (90), e.g. for housing one or a plurality of optical components, with the following steps: providing (210) a mold substrate (80) having a structured surface area (80-1) with a depression (82) and a cover substrate (90) comprising a glass material; bonding (220) the cover substrate (90) to the mold substrate (80) to form a sealed cavity (84) between the cover substrate (90) and the mold substrate (80) via the depression (82); annealing (230) the cap substrate (90) and the mold substrate (80) to reduce the viscosity of the glass material of the cap substrate (90) and providing a positive pressure in the sealed cavity (84) relative to the surrounding atmosphere to based on the reduced Viscosity of the glass material of the cover substrate (90) and the overpressure in the closed cavity (84) compared to the surrounding atmosphere, a defined bulging of the glass material of the cover substrate (90) starting from the closed cavity (84) up to a stop surface (94) at a distance from the cover substrate -1) effecting to obtain a molded cover substrate (90) having at least one cover member (38), and Removing (250) the stop member (94) and the mold substrate (80) from the molded cover substrate (90), the molded cover substrate (90) forming the cover substrate with the at least one cover member (38). procedure after Claim 41 , wherein the cover substrate (90) has a stiffening structure (92) on the first or second main surface region (90-1, 90-2) of the cover substrate (90), wherein in the step (220) of arranging the cover substrate (90) on the structured surface area (80-1) of the mold substrate (80) placing the cover substrate (90) with the reinforcement element (92) aligned on the structured surface area (80-1) of the mold substrate (80), around the reinforcement element (92) on the cover substrate (90) in an aligned position with the structured surface area (80-1) of the mold substrate (80); or wherein the cover substrate has two opposing stiffening structures (92) which are arranged on the cover substrate (90) on opposite side surfaces (90-1, 90-2) of the cover substrate (90) and opposite to each other at a position to be in the step ( 220) arranging the cover substrate (90) on the structured surface area (80-1) of the mold substrate (80) arranging the cover substrate (90) aligned on the structured surface area (80-1) of the mold substrate (80) in order to 80) placing facing reinforcement members (92) in an aligned position with the patterned surface area of the mold substrate (80). procedure after Claim 41 or 42 , further comprising the steps of: removing the stiffening structure or stiffening structures (92) from the formed cover substrate (90) after the step of annealing and providing an overprint, and/or singulating the formed cover substrate to obtain singulated cover elements (38). Method (400) for producing a cover substrate (90), e.g. for housing one or a plurality of optical components, with the following steps: providing (420) a mold substrate (81) having a structured surface area (81-1) having depressions (83) and a cover substrate (91) comprising a glass material; Bonding (425) a second main surface area of the cover substrate (91) to a first main surface area (81-1) of the mold substrate (81) in order to form cavities between the cover substrate (91) and the mold substrate (81) which are closed by means of the depressions (83). ; annealing (430) the cap substrate (91) and the mold substrate (81) to reduce the viscosity of the glass material of the cap substrate (91) to allow the glass material to flow into the recesses (91) based on the reduced viscosity of the glass material of the cap substrate (91). 83) to obtain a shaped cover substrate (91) with at least one cover element (38), and Removing (435) the molded substrate (81) from the molded cover substrate (90), the molded cover substrate (90) forming the lid substrate with the at least one lid member (38). procedure after Claim 44 wherein in the step (430) of annealing, a negative pressure is created in the closed cavity (83) with respect to the surrounding atmosphere in order to support the inflow or drawing of the glass material of the cover substrate (91) into the depressions (83). procedure after Claim 44 or 45 , wherein a negative pressure or vacuum is enclosed in the closed cavity (83) during the connecting (425) in order to obtain a negative pressure in the closed cavity (83) with respect to the surrounding atmosphere in the step (430) of annealing in order to prevent the inflow or assist in drawing the glass material of the cover substrate (91) into the recesses (83). Procedure according to one of Claims 44 until 46 , wherein the cover substrate (91) has a stiffening structure (92) on the first main surface area (91-1) of the cover substrate (91), wherein in the step (425) of arranging the cover substrate (91) on the structured surface area (81-1 ) of the mold substrate (81), the cover substrate (91) with the reinforcement element (92) aligned on the structured surface area (81-1) of the mold substrate (81) is arranged to the reinforcement element (92) on the cover substrate (91) in an aligned position between two recesses (83) of the mold substrate (81); Procedure according to one of Claims 44 until 47 , further comprising the following steps: removing (435) the stiffening structure or stiffening structures (92) after the annealing step, and dicing (455) the formed cover substrate (91) in order to obtain diced cover elements (38).

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