DE102020109391A1 - Hochfrequenzschalter mit steuerbarer resonanzfrequenz - Google Patents

Hochfrequenzschalter mit steuerbarer resonanzfrequenz Download PDF

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Publication number
DE102020109391A1
DE102020109391A1 DE102020109391.8A DE102020109391A DE102020109391A1 DE 102020109391 A1 DE102020109391 A1 DE 102020109391A1 DE 102020109391 A DE102020109391 A DE 102020109391A DE 102020109391 A1 DE102020109391 A1 DE 102020109391A1
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DE
Germany
Prior art keywords
switch
fets
branch
fet
inductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102020109391.8A
Other languages
German (de)
English (en)
Inventor
Amr Reda Saad Ezz
Yousri Abozaid Mohamed Ahmed
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Analog Devices International ULC
Original Assignee
Analog Devices International ULC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/815,694 external-priority patent/US10992334B2/en
Application filed by Analog Devices International ULC filed Critical Analog Devices International ULC
Publication of DE102020109391A1 publication Critical patent/DE102020109391A1/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
    • H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/002—Switching arrangements with several input- or output terminals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
DE102020109391.8A 2019-04-04 2020-04-03 Hochfrequenzschalter mit steuerbarer resonanzfrequenz Pending DE102020109391A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962829219P 2019-04-04 2019-04-04
US62/829,219 2019-04-04
US16/815,694 2020-03-11
US16/815,694 US10992334B2 (en) 2019-04-04 2020-03-11 Radio frequency switches with controllable resonant frequency

Publications (1)

Publication Number Publication Date
DE102020109391A1 true DE102020109391A1 (de) 2020-10-08

Family

ID=72518776

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102020109391.8A Pending DE102020109391A1 (de) 2019-04-04 2020-04-03 Hochfrequenzschalter mit steuerbarer resonanzfrequenz

Country Status (2)

Country Link
CN (1) CN111800162B (zh)
DE (1) DE102020109391A1 (zh)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3369535B2 (ja) * 1999-11-09 2003-01-20 松下電器産業株式会社 プラズマディスプレイ装置
JP4611892B2 (ja) * 2003-05-20 2011-01-12 シチズンホールディングス株式会社 電波修正腕時計、調整装置及び電波修正腕時計の調整システム
US6940365B2 (en) * 2003-07-18 2005-09-06 Rfstream Corporation Methods and apparatus for an improved discrete LC filter
JP2005303940A (ja) * 2004-04-16 2005-10-27 Matsushita Electric Ind Co Ltd アンテナスイッチ回路、ならびにそれを用いた複合高周波部品および移動体通信機器
JP2009033643A (ja) * 2007-07-30 2009-02-12 Renesas Technology Corp 半導体集積回路
CN101483434A (zh) * 2008-01-11 2009-07-15 上海锐协微电子科技有限公司 一种低调谐增益变化的压控振荡器
JP5417346B2 (ja) * 2008-02-28 2014-02-12 ペレグリン セミコンダクター コーポレーション 集積回路素子内でキャパシタをデジタル処理で同調するときに用いられる方法及び装置
CN103187948A (zh) * 2011-12-28 2013-07-03 国民技术股份有限公司 一种电感电容谐振电路
JP2013158068A (ja) * 2012-01-26 2013-08-15 Asahi Kasei Electronics Co Ltd Ｈ型ブリッジ回路およびモータ駆動装置
JP2015122628A (ja) * 2013-12-24 2015-07-02 株式会社村田製作所 スイッチング回路および半導体モジュール
CN105207491A (zh) * 2015-10-15 2015-12-30 南京航空航天大学 高频dc-dc变换器及其谐振驱动电路
CN107579730A (zh) * 2017-09-18 2018-01-12 黄生林 一种全集成单刀双掷开关电路

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Publication number Publication date
CN111800162B (zh) 2022-03-22
CN111800162A (zh) 2020-10-20

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