DE102019128752A1 - Process for the production of stacked OLEDs - Google Patents

Abstract

Multi-layer OLED and a method for their production, in which a first OLED layer structure (10), a metallization (11), a second OLED layer structure (12), a metallization (13), an insulation layer (14), a metallization (15), a third OLED layer structure (16) and a metallization (17) are deposited, the entire process being carried out in a single process chamber (29) using a single shadow mask (19) and the shadow mask (19) when the metallizations (13, 15, 17) and the insulation layer (14) are deposited, it is at a vertical distance from the layer below.

Description

Field of technology

The invention relates to a method for producing OLEDs in which, in successive process steps, a plurality of OLED layer structures, each of which emits light in a different color, and metallizations are deposited between the OLED layer structures.

The invention also relates to a layer structure produced by the method.

State of the art

The DE 10212923A1 describes a method for coating a substrate in which both n- and p-conducting, insulating or metallic layers can be deposited in the same process chamber.

The DE 102014102191 B4 describes a process for the production of OLEDs.

The US 2018/0019441 A1 describes a method for depositing structured layers which have a plurality of layers arranged one on top of the other and which are structured by means of a single shadow mask, the shadow mask being able to assume different distances from the substrate.

The standard process for the production of OLED screens requires the deposition of a large number of layers. The layers are each deposited in a separate process chamber with a special shadow mask. Here, OLED layer structures with different colors are arranged next to one another. There are also processes in which the OLED layer structures are deposited on top of one another. Each OLED layer structure lies between two metallizations with which the surfaces of the OLED layer structures are electrically conductively connected to contact fields. The contact fields are located on the substrate and are controlled by an electronic functional layer.

Summary of the invention

The invention is based on the object of specifying a method for producing OLEDs which manages with a reduced number of process chambers.

The object is achieved by the invention specified in the claims, the subclaims not only being advantageous developments of the invention specified in the main claim, but also independent solutions to the object.

According to the invention, at least some of the multiple coating steps are carried out in only one process chamber of an OVPD reactor. The deposition process is preceded by a preparation of the substrate. Structuring the substrate surface with a large number of emission fields is part of the preparation of the substrate. With the method according to the invention, each emission field receives three OLED layer structures in the treatment steps according to the invention, which are arranged vertically one above the other, with metallizations being arranged between the OLED layer structures. These are formed by optically transparent metal layers. In the context of this disclosure, the term metallization or metal layers is understood to mean a thin layer of electrically conductive material. It is a transparent, electrically conductive layer which, in addition to a composition of metals, can optionally also contain organic components. If necessary, the transparent electrically conductive layer can also contain polymerized organic components. The basic structure of the substrate contains a multiplicity of emission fields, which can each be surrounded by an insulator and are arranged on the substrate in a checkerboard manner. In addition, four contact areas are assigned to each emission field. The emission field can have a rectangular and, in particular, a square shape. The contact surfaces can extend parallel to the edges of the emission field. It can be provided that a first pair of contact surfaces are opposite one another and have a first, small distance from the insulator. It can also be provided that a second pair of contact surfaces are opposite each other, each having a second, greater distance from the insulator or emission field. However, it can also be provided that two contact surfaces are arranged closely adjacent to the insulator or emission field in each case at a corner and two contact surfaces with a large distance from the insulator or emission field are also arranged adjacent to the corner. According to the invention, at least two steps of the following treatment steps are carried out in the same process chamber of an OVPD reactor in direct succession:

Application of a first OLED layer structure by feeding an organic vapor generated in at least one first steam generator together with a carrier gas into the process chamber and condensing the vapor on the substrate; Arranging the shadow mask in a second position and applying a first metallization to the first OLED layer structure by feeding a vapor of a metal together with a carrier gas into the process chamber and condensing the vapor on the substrate; Arrange the shadow mask in a third position and apply a second OLED layer structure by feeding an organic vapor generated in at least one second steam generator together with a carrier gas into the process chamber and condensing the vapor on the substrate; Arranging the shadow mask in a fourth position and applying a second metallization to the second OLED layer structure by feeding a vapor of a metal together with a carrier gas into the process chamber and condensing the vapor on the substrate; Arranging the shadow mask in a fifth position and applying an insulation layer to the second metallization by feeding in a vapor condensing on the substrate to form an insulator; Arranging the shadow mask in a sixth position and applying a third metallization to the insulation layer by feeding a vapor of a metal together with a carrier gas into the process chamber and condensing the vapor on the substrate; Arranging the shadow mask in a seventh position and applying a third OLED layer structure by feeding an organic vapor generated in at least one third steam generator together with a carrier gas into the process chamber and condensing the vapor on the substrate; Arranging the shadow mask in an eighth position and applying a fourth metallization to the third OLED layer structure by feeding a vapor of a metal together with a carrier gas into the process chamber and condensing the vapor on the substrate. In the context of the disclosure, a steam generator is considered to be any source that is capable of generating steam, that is to say in particular those sources in which a solid or a liquid is converted into a gas form by heating or by changing other thermodynamic parameters. It is also understood to include such devices in which an aerosol is vaporized by supplying energy.

While the OLED layer structures are being cut off, a marginal edge of an opening in the shadow mask, through which the coating material is transported in the direction of the substrate, in particular by diffusion, rests in contact with the underlying layer, for example metallization, or the insulator. The area of the OLED layer structures thus corresponds to the area of the opening of the shadow mask. The opening can be slightly larger than the interior of the emission field bounded by an edge, for example by an insulator. When the OLED layer structures are deposited, the edge of the opening can lie on the surface of the insulator, so that the OLED layer structure extends not only over the emission field but also over a section of the insulator. The positions of the shadow mask when the three OLED layer structures are deposited can be the same, so that the OLED layer structures are deposited vertically one above the other. The OLED layer structures can be deposited in the following order: red, blue, green. When the metallization and / or the insulation layer are deposited, the shadow mask can be lifted off the substrate, so that a gap is created between the edge of the opening of the shadow mask and the layer or insulator underneath. The vapor used to deposit the metallization or the insulation layer can diffuse through this gap under the web of the shadow mask. This results in the deposition of an enlarged area. When the metallization is deposited, the shadow mask is arranged in such a way that the metallization extends over a substantial area of the surface of the OLED layer structure and additionally over a contact area. For this purpose, the shadow mask is preferably displaced diagonally to the edge edges of the emission field, so that two edge edges of the metallization that adjoin one another at corners run approximately along the outer edge of the emission field or the inner edge of the insulator and one edge area of the metallization runs over a contact surface. In a preferred embodiment of the invention, the first metallization connects a contact area, which is slightly spaced apart from the insulator, to the surface of an OLED layer structure. The second metallization, which is deposited on the second OLED layer structure, can also have two edges which are adjacent to one another at a corner and which run approximately on the inner edge of the insulator or the edge of the emission field. An edge region of the metallization rests on a contact surface that is at a short distance from the accumulator or from the emission field. This contact area is connected to the surface of the OLED layer structure. The first metallization forms an electrode for two OLED structures. The first and second OLED layer structures and the first and second metallization are preferably deposited in a single process chamber with the same shadow mask in directly successive process steps. This process step can be followed by the deposition of an insulation layer. This deposition can take place in the same process chamber with the same shadow mask. The insulation layer has a size which is set by the distance of the mask from the substrate, which is sufficiently large to cover the two first and second metallizations, but not the two, in particular opposite, contact surfaces further spaced from the insulator. The distance between these second contact areas from the insulator or from the emission field is greater than the width of the first contact areas which are arranged close to the insulator. In a further sequence of process steps that are carried out in a different process chamber, but preferably in the same process chamber in which the previous process steps have been carried out, first a third metallization, then a third OLED layer structure and then a fourth metallization is deposited on the insulation layer. Here, too, the third and fourth metallizations are deposited in such a way that an edge section of the metallization extends over one of the two exposed contact surfaces. The metallizations can have two edge edges adjoining one another at a corner, which extend along the inner edge of the emission field. The result of the method described above is a layer stack of transparent layers in which red, green and blue light-emitting OLED layer structures are arranged vertically one above the other, each OLED being able to be controlled electrically separately and independently of neighboring OLEDs. For this purpose, two electrodes are provided in each case, which are formed by the metallizations. One metallization forms an anode and another metallization forms a cathode. The electrodes are deposited in such a way that they have electrical contact with control electronics that are formed by the electronic functional layer. A metal source is used to produce the metallization. The OVPD reactor is a vacuum reactor whose gas inlet element can be heated to a vapor temperature of the metal. Vaporized metal can be fed into the process chamber via a carrier gas through the gas inlet element, which can be a showerhead. There the substrate lies on a cooled substrate holder so that the vaporized metal can condense on the substrate and in particular under the openings of the shadow mask. The metal vapor diffuses under the webs of the mask. Before it is brought into the process chamber and placed on the substrate holder, the substrate is structured with a large number of emission fields, each mission field having an electronic functional unit. The latter can be formed by an electronic functional layer. The emission field is surrounded by an insulator. Four contact surfaces are connected to the functional unit, each of which is connected to a metallization. In a first process step, a red OLED layer structure is deposited, the distance between the mask and the substrate being less than 10 μm, preferably 0 μm. The shadow mask is then raised and displaced parallel to the substrate plane and, in particular, diagonally to the legs of the insulator. When the metallization is deposited, the distance from the shadow mask to the substrate can be greater than 10 µm. The next OLED layer structure is deposited directly on the metallization, for this purpose the distance between the disk mask and the substrate is preferably less than 10 μm, preferably 0 μm. The shadow mask is then raised and displaced parallel to the substrate plane and, in particular, diagonally to the legs of the insulator. When the next metallization is deposited, the distance from the shadow mask to the substrate can be greater than 10 µm. The mask is again shifted parallel to the plane of extension of the substrate and raised to a distance of greater than 10 μm, preferably greater than 20 μm and preferably greater than 50 μm. The insulation layer is deposited in this position. The mask is then raised, if necessary, and shifted again in the plane of extent of the substrate. It can be lowered to a distance of greater than 10 µm. Another transparent conductive layer is deposited as a metallization. The mask is then raised, shifted and lowered, if necessary, until the distance between the shadow mask and the substrate is less than 10 μm, preferably 0 μm. The next OLED layer structure is deposited in this spaced position. The mask is then lifted, shifted again and, at a distance of greater than 10 μm, a transparent conductive layer is deposited onto the substrate as a metallization. The metallizations are deposited in such a way that they are electrically isolated from one another. It is considered advantageous if two OLED layer structures share a common contact. The layer thickness of the metallization or the insulation layer can be less in the area in which it lies below the webs of the shadow mask than in the area of the opening of the shadow mask. According to a further aspect of the invention, it is provided that the shadow mask is laterally displaced during the deposition of one of the previously described layers in one of the previously described process steps in such a way that the effective size of the opening of the shadow mask increases. In this way, areas of different sizes can be deposited in an alternative procedure.

Figure list

• 1 schematisch eine Draufsicht auf einen Ausschnitt eines vorbereiteten Substrates mit einer Vielzahl von Emissionsfeldern 2,
• 2 die Draufsicht auf ein einzelnes Emissionsfeld 2 mit außerhalb eines das Emissionsfeld 2 umgebenden Isolators 5 angeordneten Kontaktflächen 6, 7, 8, 9,
• 3 den Schnitt gemäß der Linie III-III in 2,
• 4 den Schnitt gemäß der Linie IV-IV in 2,
• 5 eine Darstellung gemäß 2 nach dem Abscheiden einer ersten OLED-Schichtstruktur 10 unter Verwendung einer Schattenmaske 19,
• 6 den Schnitt gemäß der Linie VI-VI in 5,
• 7 den Schnitt gemäß Linie VII-VII in 5,
• 8 eine Darstellung gemäß 5, jedoch nach Abscheiden einer Metallisierung 11,
• 9 den Schnitt gemäß der Linie IX-IX in 8,
• 10 den Schnitt gemäß der Linie X-X in 8,
• 11 eine Darstellung gemäß 8, jedoch nach Abscheiden einer weiteren OLED-Schichtstruktur 12,
• 12 den Schnitt gemäß der Linie XII-XII in 11,
• 13 den Schnitt gemäß der Linie XIII-XIII in 11,
• 14 eine Darstellung gemäß 11, jedoch nach Abscheiden einer weiteren Metallisierung 13,
• 15 den Schnitt gemäß der Linie XV-XV in 14,
• 16 den Schnitt gemäß der Linie XVI-XVI in 14,
• 17 eine Darstellung gemäß 14, jedoch nach Abscheiden einer Isolationsschicht 14,
• 18 den Schnitt gemäß der Linie XVIII-XVIII in 17,
• 19 den Schnitt gemäß der Linie XIX-XIX in 17,
• 20 eine Darstellung gemäß 17, jedoch nach Abscheiden einer weiteren Metallisierung 15,
• 21 den Schnitt gemäß der Linie XXI-XXI in 20,
• 22 den Schnitt gemäß der Linie XXII-XXII in 20,
• 23 eine Darstellung gemäß 20, jedoch nach Abscheiden einer weiteren OLED-Schichtstruktur 16,
• 24 den Schnitt gemäß der Linie XXIV-XXIV in 23,
• 25 den Schnitt gemäß der Linie XXV-XXV in 24,
• 26 eine Darstellung gemäß 23, jedoch nach Abscheiden einer weiteren Metallisierung 17,
• 27 den Schnitt gemäß der Linie XXVII-XXVII in 26,
• 28 den Schnitt gemäß der Linie XXVIII-XXVIII in 26 und
• 29 schematisch eine Vorrichtung zur Durchführung des Verfahrens.

An exemplary embodiment of the invention is explained below with reference to the accompanying drawings. Show it:

• 1 schematically a plan view of a section of a prepared substrate with a plurality of emission fields 2 ,
• 2 the top view of a single emission field 2 with outside one the emission field 2 surrounding isolator 5 arranged contact surfaces 6th , 7th , 8th , 9 ,
• 3 the section along the line III-III in 2 ,
• 4th the section along the line IV-IV in 2 ,
• 5 a representation according to 2 after the deposition of a first OLED layer structure 10 using a shadow mask 19th ,
• 6th the section along the line VI-VI in 5 ,
• 7th the section along line VII-VII in 5 ,
• 8th a representation according to 5 , but after a metallization has been deposited 11 ,
• 9 the section along the line IX-IX in 8th ,
• 10 the section along the line XX in 8th ,
• 11 a representation according to 8th , but after depositing another OLED layer structure 12th ,
• 12th the section along the line XII-XII in 11 ,
• 13th the section along the line XIII-XIII in 11 ,
• 14th a representation according to 11 , but after a further metallization has been deposited 13th ,
• 15th the section along the line XV-XV in 14th ,
• 16 the section along the line XVI-XVI in 14th ,
• 17th a representation according to 14th , but after the deposition of an insulation layer 14th ,
• 18th the section along the line XVIII-XVIII in 17th ,
• 19th the section along the line XIX-XIX in 17th ,
• 20th a representation according to 17th , but after a further metallization has been deposited 15th ,
• 21 the section along the line XXI-XXI in 20th ,
• 22nd the section along the line XXII-XXII in 20th ,
• 23 a representation according to 20th , but after depositing another OLED layer structure 16 ,
• 24 the section along the line XXIV-XXIV in 23 ,
• 25th the section along the line XXV-XXV in 24 ,
• 26th a representation according to 23 , but after a further metallization has been deposited 17th ,
• 27 the section along the line XXVII-XXVII in 26th ,
• 28 the section along the line XXVIII-XXVIII in 26th and
• 29 schematically an apparatus for carrying out the method.

Description of the embodiments

The 29 shows a device as it is also mentioned in the introduction DE 10212923 A1 is described. In a gas-tight, evacuable housing 30th of an OVPD reactor there is a substrate holder 31 with cooling channels 32 through which a coolant can flow to the substrate holder 31 to cool. On the substrate holder 31 is a substrate to be coated 1 made of glass or another transparent material. Above the substrate 1 there is a process chamber 29 into which various process gases can be fed. The process gases are organic, metallic or other vapors that are transported with a carrier gas and that are deposited on the substrate 1 can condense. Above the process chamber 29 a gas outlet surface extends 34 a gas inlet element having the shape of a rectangular shower head 33 . The gas exit area 34 has a large number of gas outlet openings arranged in the manner of a sieve or a grid 35 , through which the process gas from a gas distribution volume of the gas inlet element 33 into the process chamber 29 can occur. Within the gas distribution volume of the gas inlet element 3 Means, not shown, can be arranged for equalizing the process gas. The gas distribution volume of the gas inlet element 33 comes with a lead 36 fed. In the supply line 36 can optionally be an organic steam that is produced in a steam generator 40 or a metallic vapor that is generated in a metal vapor source 37 is generated. Into the metal steam source 37 opens a gas supply line 41 through which a carrier gas, for example hydrogen, nitrogen or another inert gas, is fed. This carrier gas is used in the metal source 37 generated metal vapor for supply line 36 transported. The steam generator 38 can be an aerosol generator 39 have, in which an aerosol is generated from organic particles, which with a in a gas supply line 42 fed carrier gas to an evaporator 38 where the aerosol particles are vaporized.

The Indian 29 with the reference number 40 designated steam generator can also be designed differently, for example as a tub that contains a liquid or solid substance that is brought into a gaseous state by supplying energy. The steam generated in this way passes through the supply line 36 into the gas inlet member. This can also be done with a carrier gas that flows through a gas feed line 42 in the steam generator 40 is fed in. There can be several steam generators 40 be provided, of which in the 29 but only one is shown for the sake of clarity.

When the process is carried out, the process chamber is used 29 a prepared substrate is introduced. The substrate 1 has a large number of emission fields arranged in a checkerboard or grid-like manner 2 each of a square insulator 5 are surrounded. Along the edge of the insulator 5 first and second contact surfaces extend 6th , 7th , 8th , 9 . The first contact areas 6th , 8th are immediately adjacent to a marginal edge of the insulator 5 arranged. In the exemplary embodiment, there are two first contact surfaces 6th , 8th across from. The second contact areas 7th , 9 are from a peripheral edge of the insulator 5 further apart than the first contact surfaces 6th , 8th . The distance between the second contact surfaces 7th , 9 to the edge of the insulator 5 is larger than the width of the first contact areas 6th , 8th and in particular greater than the distance from the insulator 5 leading edge of the first contact surface 6th , 8th from the isolator 5 . The width of the second contact areas 7th , 9 can be the width of the first contact areas 6th , 8th correspond. A substrate prepared in this way is shown in FIG 2 using the example of one of the many emission fields 2 how they the 1 shows.

The sectional views of the 3 and 4th show the isolator 5 in cross section. The isolator 5 is shown schematically as a rectangular cross-sectional structure. However, it can also have a bead-like shape in cross-section or a trapezoidal shape in cross-section. Within the emission field 2 an electrically conductive layer extends 4th , which can be an anode in the exemplary embodiment. This is with an electronic functional layer 3 connected. The contact areas 6th , 7th , 8th , 9 are also with the electronic functional layer 3 connected. Via the electronic functional layer 3 can be the electrically conductive layer 4th and can the contact surfaces 6th to 9 individually supplied with electrical voltage, so that each of the large number of fully processed emission fields 2 can form a pixel of a display, which emits light in any color.

In a first process step, the prepared substrate is made 1 into the process chamber 29 of the OVPD reactor and placed on the substrate holder 31 hung up. Inside the process chamber 29 there is one in the 29 shadow mask not shown 19th , which have a plurality of chessboard-like arranged openings, each separated by a web from an adjacent opening 20th having. The areas of the openings 20th are slightly larger than the area of an emission field 2 so that the edge 21 the opening 20th in the in the 5 to 7th process step shown on the isolator 5 rests.

From a steam generator 40 an organic vapor is generated, which with a carrier gas through the gas inlet element 33 through into the process chamber 29 is transported. The temperature of the gas inlet organ 33 and the supply line 36 is higher than the condensation temperature of the steam. The steam condenses with the formation of an organic layer 10 on the anode 4th , with an edge area of the organic layer 10 over an edge area of the insulator 5 extends. The substrate holder 31 is for this purpose cooled to a temperature below the condensation temperature. Such a deposited organic layer 10 that can emit red light, for example, is in the 6th and 7th shown schematically.

The 8-10 show a second process step in which using the same shadow mask 19th a first electrically conductive layer on the previously deposited organic layer 11 is deposited. To do this, the mask 19th raised so that there is a gap 18th between a web of the mask 19th and the substrate or the contact area 8th trains. In this position, a metallic vapor is generated from the metal source 37 together with a carrier gas through the gas inlet member 30th into the process chamber 29 promoted. The temperature of the supply line 36 and the gas inlet member 33 is also here higher than the condensation temperature of the metal. The mask 19th is based on the in the 5 to 7th The direction shown laterally shifted both in the X-direction and in the Y-direction. In addition, the mask 19th raised in the Z direction.

In this position of the mask, a metallic vapor is generated from the metal source 37 together with a carrier gas through the gas inlet member 30th into the process chamber 29 promoted. The temperature of the supply line 36 and the gas inlet member 23 is greater than the condensation temperature of the metal. The metal used is a metal whose condensation temperature is below 450.degree. C., preferably below 400.degree. Zinc, for example, can be considered as the metal. The steam diffuses through the opening 20th through and onto the organic layer that has already been deposited 10 . The steam also diffuses under the webs between the openings 20th the shadow mask 19th so that the deposited metal layer 11 has a larger area than the underlying organic layer 10 . Because of the lateral offset of the shadow mask 19th becomes the layer over the contact area 8th deposited. The layer deposited in this step 11 forms an electrode of the organic layer sequence 10 .

The 11 to 13th show a third process step in which a second organic layer is created using the same shadow mask 12th on the previously deposited metallization 11 is deposited. The shadow mask 19th is brought to about the same position as the first organic layer 10 has been deposited ( 8th ). The shadow mask 19th is lowered so far that the edge 21 on the metallization 11 rests. With another steam source from a steam generator 40 Another organic starting material is provided which can condense to form a blue OLED, for example. The organic layer deposited during this process step, which can also be a layer sequence, is in the 12th and 13th with the reference number 12th designated. The second organic layer 12th is deposited in such a way that one of its edges is directly on an edge of the first organic layer 10 immediately lies.

The previously deposited conductive layer 11 also forms an electrode for the organic layer sequence deposited in the second process step 12th .

The 14th to 16 show a fourth process step in which the same shadow mask is used 19th a second electrically conductive layer on the previously deposited organic layer 12th is deposited. To do this, the mask 19th raised so that there is a gap 18th between the edge 21 the opening 20th the mask 19th and the underlying layer. The mask is based on the one in the 11 to 13th position shown, has been moved both in the X-direction and in the Y-direction. In addition, the mask 19th raised in the Z direction.

In this position, a metallic vapor, which can be the same vapor that was used in the second process step, is released from the metal source 37 together with a carrier gas through the gas inlet member 30th into the process chamber 29 promoted. Because of the gap 18th between the edge 21 the opening 20th the mask 19th and the underlying layer, the vapor does not only diffuse onto the organic layer 12th but also through contact 8th . The metallic layer 13th thus forms an electrode that makes the contact 8th with the organic layer 12th connects.

The 17th to 19th show a fifth process step in which using the same shadow mask 19th an insulating layer 14th on the previously deposited metallization 13th is deposited. To do this, the mask 19th both in the X-direction and in the Z-direction displaced such that the center of the opening 20th about the center of the emission field 2 lies. The mask 19th is shifted so far in the Z direction that there is a gap 18th between the bridge of the mask 19th and the underlying layer that forms a through the gas inlet member 33 injected steam, which can condense as an insulator, not only on the metallization that was deposited last 13th condensed, but also on the previously deposited metallization 11 . The insulation layer 14th thus covers the two opposing contact surfaces 6th and 8th , but not the opposite ones, further than the contact surfaces 6th , 8th from the emission field 2 distant contact surfaces 7th and 9 . All metallizations are preferred 11 , 13th and OLED layer structures 10 , 12th completely covered.

The 20th to 22nd show a sixth process step in which the same shadow mask is used 19th a third electrically conductive layer 15th onto the previously deposited insulation layer 14th is deposited. To do this, the mask 19th displaced in the X-direction, Y-direction and Z-direction. The edge 21 the opening 20th is from the underlying insulation layer 14th by a crack 18th spaced. One in the process chamber 29 Metallic vapor fed in in the manner described above diffuses onto the surface of the insulation layer 14th and under the edges 21 so that the third electrically conductive layer acts as the electrode of a further organic layer, the latter with the contact surface 7th connects.

The 23 to 25th show a seventh process step in which the same shadow mask is used 19th a third organic layer or layer sequence 16 on the third electrically conductive layer 15th is deposited. The shadow mask 19th is brought into a position in which the edges 21 the opening 20th lie on an underlying layer, so that here too, as in the first and third process step, an organic layer 16 is applied to the previously deposited electrode, the area of which is only slightly larger than the area within the insulator 5 . The organic vapor is provided by another vapor source. For example, a green OLED is deposited.

The 26th to 28 show an eighth process step in which using the same shadow mask 19th a fourth electrically conductive layer 17th onto the previously deposited organic layer 16 is deposited. To do this, the mask 19th displaced in the X direction, Y direction and Z direction in such a way that the electrically conductive layer 17th not just about the third organic layer 16 extends, but also over the contact surface 7th so that the electrically conductive layer 17th forms an electrode for the green OLED.

In the exemplary embodiment, the emission field has 2 a square floor plan. However, other embodiments are also provided in which the floor plan of the emission field 2 deviates from the shape of a square. In the exemplary embodiment, the opening 20th the shadow mask 19th a square floor plan. However, embodiments are also provided in which the outline of the opening 20th the shadow mask 19th has a floor plan that differs from the square shape. In the exemplary embodiment, all the deposited layers have the outline of a square. However, embodiments can also be provided in which the plan of the deposited layers deviates from the square shape.

The size of the areas of the deposited layers is different from one another. The OLED layer structures 10 , 12th , 16 have the smallest area size. The area of the OLED layer structures 10 , 12th , 16 corresponds to the area of the opening 20th . The surfaces of the metallizations 11 , 13th , 15th , 17th can be the same size. They are larger than the areas of the OLED layer structures 10 , 12th , 16 . It is provided in particular that the length of a peripheral edge of a metallization 11 has at least a length that is the sum of the edge length of the emission field 2 the width of the isolator 5 , the distance of the assigned contact surface 6th , 7th , 8th , 9 from the isolator 5 and the width of the contact area 6th , 7th , 8th , 9 is. The sizes of the under the insulation layer 14th lying metallizations 11 , 13th can be smaller than the size of the metallizations above the insulation layer 15th , 17th . The insulation layer can have the largest area. The area of the insulation layer 14th is in particular larger than the areas of the metallizations 11 , 13th , 15th , 17th .

To achieve these area ratios, the distance is 18th when depositing the insulation layer 14th greater than the distance 18th when depositing the metallizations 11 , 13th , 15th , 17th . The distance 18th is when depositing the above the insulation layer 14th arranged metal coatings 15th , 17th greater than the distance 18th when depositing the under the insulation layer 14th lying metallizations 11 , 13th .

In the figures, the mask has 19th a plurality of openings regularly distributed over the entire surface of the mask 20th . The edges 21 the opening 20th can be sharp-edged or rounded. The mask cannot change its position during one of the process steps described. However, it can also be provided that it is linearly displaced in the direction of extent of the mask during the deposition of a layer in order to enlarge the area of the deposited layer. For this purpose, the holder of the mask can have a drive, for example a stepping motor, with which the mask is displaced at a predetermined speed while the steam is being fed into the process chamber. An opening 20th With a square floor plan, you can create a layer with an elongated floor plan. As a result of the displacement of the mask during a deposition, the opening is to a certain extent no longer located symmetrically above the deposition surface. When the method is carried out in this way, the 9 , 10 , 15th , 16 , 18th , 19th , 21 , 22nd , 27 , 28 only snapshots of a position of the shadow mask 19th , which is moved in its direction of extension during the deposition of the respective layer. This allows the distance between the shadow mask 19th compared to the substrate 1 or the width of the gap 18th compared to litigation in which the shadow mask 19th is not moved, be decreased.

The above explanations serve to explain the inventions covered by the application as a whole, which also develop the state of the art independently at least through the following combinations of features, whereby two, more or all of these combinations of features can also be combined, namely:

A method that is characterized by arranging the shadow mask 19th into a first position and applying a first OLED layer structure 10 by feeding one into at least one first steam generator 40 generated organic vapor together with a carrier gas into the process chamber 29 and condensing the vapor on the substrate 1 ; Arranging the shadow mask 19th into a second position and applying a first metallization 11 onto the first OLED layer structure 10 by feeding a vapor of a metal together with a carrier gas into the process chamber 29 and condensing the vapor on the substrate 1 ; Arranging the shadow mask 19th into a third position and applying a second OLED layer structure 12th by feeding an organic steam generated in at least one second steam generator together with a carrier gas into the process chamber 29 and condensing the vapor on the substrate 1 ; Arranging the shadow mask in a fourth position and applying a second metallization 13th onto the second OLED layer structure by feeding a vapor of a metal together with a carrier gas into the process chamber 29 and condensing the vapor on the substrate 1 ; Arranging the shadow mask 19th into a fifth position and applying an insulation layer 14th on the second metallization 13th by feeding one on the substrate 1 steam condensing to an isolator; Arranging the shadow mask 19th into a sixth position and applying a third metallization 15th on the insulation layer 14th by feeding a vapor of a metal together with a carrier gas into the process chamber 29 and condensing the vapor on the substrate 1 ; Arranging the shadow mask 19th into a seventh position and applying a third OLED layer structure 16 by feeding an organic steam generated in at least one third steam generator together with a carrier gas into the process chamber 29 and condensing the vapor on the substrate 1 or arranging the shadow mask 19th into an eighth position and applying a fourth metallization 17th on the third OLED layer structure 16 by feeding a vapor of a metal together with a carrier gas into the process chamber 29 and condensing the vapor on the substrate 1 .

A method which is characterized in that a marginal edge 21 an opening 20th the shadow mask 19th when depositing the first to third OLED layer structures 10 , 12th , 16 touching the layer below.

A method, which is characterized in that the shadow mask 19th is moved in their direction of extension when the metallizations and / or the insulation layer are deposited.

A method which is characterized in that a marginal edge 21 an opening 20th the shadow mask 19th when depositing the first to fourth metallization 11 , 13th , 15th , 17th and / or the insulation layer 14th through a gap 18th from the underlying layer or insulator 5 is spaced.

A method which is characterized in that the first OLED layer structure 10 to an electrically conductive anode 4th is deposited, which is the prepared substrate 1 or those in a previous treatment step in the same process chamber 29 is deposited.

A method which is characterized in that at least one of the first to third OLED layer structures each has a plurality of organic layers, which are arranged one behind the other, in particular without changing the position of the shadow mask 19th to be deposited.

A method, which is characterized in that the shadow mask 19th when they are moved into their second, fourth, fifth, sixth and eighth position, both parallel to the plane of extension of the substrate 1 , so also perpendicular to it, in the direction away from the substrate 1 is relocated.

A method, which is characterized in that the shadow mask 19th when they are moved into the third and seventh position, both parallel to the plane of extent of the substrate 1 as well as perpendicular to it in the direction of the substrate 1 is relocated.

A method, which is characterized in that at least the deposition of the first OLED layer structure 10 , the first metallization 11 , the second OLED layer structure and the second metallization 13th and / or the deposition of the third metallization 15th , the third OLED layer structure 16 and the fourth metallization 17th and / or the insulation layer 14th in a single process chamber 29 is carried out in consecutive steps.

A method which is characterized in that all treatment steps follow one another in a single process chamber 29 be performed.

A method, which is characterized in that the substrate 1 one the functional layer 3 surrounding isolator 5 having, wherein the contact surfaces 6th , 7th , 8th , 9 along the from the functional layer 3 groundbreaking edge of the isolator 5 extend.

A layer structure, which is characterized in that the contact surfaces 6th , 7th , 8th , 9 at different distances from the edge of the functional layer 3 along one edge of the functional layer 3 extend.

A method, which is characterized in that the contact surfaces 6th , 7th , 8th , 9 first contact surfaces 6th , 8th train that the emission field 2 are less spaced than second contact surfaces 7th , 8th and / or that first contact surfaces 6th , 7th a first distance to the emission field 2 or to one the emission field 2 surrounding isolator 5 have and second contact surfaces 6th , 8th a second distance to the emission field 2 or to the isolator 5 have, wherein the second distance is at least the sum of the first distance and a width of the first contact surfaces measured in the direction of the distance 6th , 7th is.

All the features disclosed are essential to the invention (individually, but also in combination with one another). The disclosure of the application hereby also includes the full content of the disclosure content of the associated / attached priority documents (copy of the previous application), also for the purpose of including features of these documents in the claims of the present application. The subclaims characterize, even without the features of a referenced claim, with their features independent inventive developments of the prior art, in particular in order to make divisional applications on the basis of these claims. The one in every claim The specified invention can additionally have one or more of the features provided in the above description, in particular provided with reference numerals and / or indicated in the list of reference numerals. The invention also relates to design forms in which some of the features mentioned in the above description are not implemented, in particular insofar as they are recognizable for the respective purpose or can be replaced by other technically equivalent means.

List of reference symbols

1

Substrate

2

Emission field

3

electronic functional layer

4th

anode

5

insulator

6th

Contact area

7th

Contact area

8th

Contact area

9

Contact area

10

red OLED

11

Metallization

12th

blue OLED

13th

Metallization

14th

Insulation layer

15th

Metallization

16

green OLED

17th

Metallization

18th

gap

19th

Shadow mask

20th

opening

21

edge

29

Process chamber

30th

casing

31

Substrate holder

32

Cooling duct

33

Gas inlet element

34

Gas outlet surface

35

Gas outlet opening / OVPD reactor

36

Supply line

37

Metal source

38

Evaporator

39

Aerosol generator

40

Steam generator

41

Gas supply line

42

Gas supply line

QUOTES INCLUDED IN THE DESCRIPTION

This list of the documents listed by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Patent literature cited

• DE 10212923 A1 [0003, 0013]
• DE 102014102191 B4 [0004]
• US 2018/0019441 A1 [0005]

Claims (14)

Method for producing OLEDs, in which a substrate (1) is prepared with a plurality of emission fields (2), each emission field (2) having an electronic functional layer (3) and several contact surfaces (6) arranged near the edge of the emission field (2) , 7, 8, 9), and the substrate (1) prepared in this way is brought into a process chamber (29) of an OVPD reactor (35) and carried out therein at least two of the following treatment steps immediately one after the other and with the same shadow mask (19) Arranging the shadow mask (19) in a first position and applying a first OLED layer structure (10) by feeding an organic steam generated in at least one first steam generator (40) together with a carrier gas into the process chamber (29) and condensing the steam on the substrate (1); Arranging the shadow mask (19) in a second position and applying a first metallization (11) to the first OLED layer structure (10) by feeding a vapor of a metal together with a carrier gas into the process chamber (29) and condensing the vapor on the substrate (1); Arranging the shadow mask (19) in a third position and applying a second OLED layer structure (12) by feeding an organic vapor generated in at least one second steam generator together with a carrier gas into the process chamber (29) and condensing the vapor on the substrate (1 ); Arranging the shadow mask in a fourth position and applying a second metallization (13) to the second OLED layer structure by feeding a vapor of a metal together with a carrier gas into the process chamber (29) and condensing the vapor on the substrate (1); Arranging the shadow mask (19) in a fifth position and applying an insulation layer (14) to the second metallization (13) by feeding in a vapor condensing on the substrate (1) to form an insulator; Arranging the shadow mask (19) in a sixth position and applying a third metallization (15) to the insulation layer (14) by feeding a vapor of a metal together with a carrier gas into the process chamber (29) and condensing the vapor on the substrate (1) ; Arranging the shadow mask (19) in a seventh position and applying a third OLED layer structure (16) by feeding an organic vapor generated in at least one third steam generator together with a carrier gas into the process chamber (29) and condensing the vapor on the substrate (1 ) or arranging the shadow mask (19) in an eighth position and applying a fourth metallization (17) to the third OLED layer structure (16) by feeding a vapor of a metal together with a carrier gas into the process chamber (29) and condensing the vapor the substrate (1). Procedure according to Claim 1 , characterized in that a marginal edge (21) of an opening (20) of the shadow mask (19) rests in contact with the underlying layer when the first to third OLED layer structures (10, 12, 16) are deposited. Method according to one of the preceding claims, characterized in that the shadow mask (19) is moved in its direction of extension when the metallizations and / or the insulation layer are deposited. Method according to one of the preceding claims, characterized in that a marginal edge (21) of an opening (20) of the shadow mask (19) during the deposition of the first to fourth metallization (11, 13, 15, 17) and / or the insulation layer (14) is spaced from the underlying layer or the insulator (5) by a gap (18). Method according to one of the preceding claims, characterized in that the first OLED layer structure (10) is deposited on an electrically conductive anode (4) which has the prepared substrate (1) or which in a previous treatment step in the same process chamber (29) is deposited. Method according to one of the preceding claims, characterized in that at least one of the first to third OLED layer structure each has a plurality of organic layers which are deposited one behind the other, in particular without changing the position of the shadow mask (19). Method according to one of the preceding claims, characterized in that the shadow mask (19) when it is shifted into its second, fourth, fifth, sixth and eighth position both parallel to the plane of extent of the substrate (1), i.e. also perpendicular to it, in the direction away from Substrate (1) is relocated. Method according to one of the preceding claims, characterized in that when the shadow mask (19) is shifted into the third and seventh position, it is shifted both parallel to the plane of extent of the substrate (1) and perpendicular thereto in the direction of the substrate (1). Method according to one of the preceding claims, characterized in that at least the deposition of the first OLED layer structure (10), the first metallization (11), the second OLED layer structure and the second metallization (13) and / or the deposition of the third metallization (15), the third OLED layer structure (16) and the fourth metallization (17) and / or the insulation layer (14) in a single process chamber ( 29) is carried out in consecutive steps. Method according to one of the preceding claims, characterized in that all treatment steps are carried out in direct succession in a single process chamber (29). Method according to one of the preceding claims, characterized in that the substrate (1) has an insulator (5) surrounding the functional layer (3), the contact surfaces (6, 7, 8, 9) extending along the length of the functional layer (3) extending edge of the insulator (5). Layer structure having an electronic functional layer (3) applied to a substrate (1) and a plurality of contact surfaces (6, 7, 8, 9) arranged near the edge of an emission field (2), wherein on the functional layer (3) in the region of the emission field ( 2) a first OLED layer structure (10) is applied, a first metallization (11) connecting contact areas (8) to the first OLED layer structure (10) being applied to the first OLED layer structure (10), wherein on the first metallization (11) a second OLED layer structure (12) is applied, a second metallization (13) connecting contact areas (6) to the second OLED layer structure (12) being applied to the second OLED layer structure (12) an insulation layer (14) also covering the contact surfaces (6, 8) being applied to the second metallization (13), a third metallization (1 5) is applied, a third OLED layer structure (16) being applied to the third metallization (15) and a contact surface (9) connecting the third OLED layer structure (12) to the third OLED layer structure (16) , fourth metallization (17) is applied, characterized in that the contact surfaces (6, 7, 8, 9) extend at different distances from the edge of the functional layer (3) along one edge of the functional layer (3). Method according to one of the preceding claims or layer structure according to Claim 12 , characterized in that the contact surfaces (6, 7, 8, 9) form first contact surfaces (6, 8) which are less spaced from the emission field (2) than second contact surfaces (7, 8) and / or that first contact surfaces ( 6, 7) have a first distance from the emission field (2) or from an insulator (5) surrounding the emission field (2) and second contact surfaces (6, 8) have a second distance from the emission field (2) or from the insulator (5) , wherein the second distance is at least the sum of the first distance and a width of the first contact surfaces (6, 7) measured in the direction of the distance. Method or layer structure, characterized by one or more of the characterizing features of one of the preceding claims.

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