DE102017201294A1 - Process for producing Peltier elements and a thermoelectric heat exchanger - Google Patents

Abstract

The present invention relates to a method for producing Peltier elements (1), in which an electrically conductive carrier (2) is alternately provided with receptacles (12) on opposite sides (6, 7) and the receptacles (12) alternately with a P Semiconductor portion (21) and an N-semiconductor portion (22) are populated. Thereafter, the semiconductors (19, 20) are covered with an electrically conductive material (23) and recesses (24) are introduced alternately from the opposite sides (6, 7) into the carrier (2). As a result, Peltier elements (1) can be simplified and produced inexpensively and variably. At least two Peltier elements (1) can be produced from this Peltier element (1) by dividing into at least two parts (28). The invention further relates to a method for producing a thermoelectric heat exchanger (31) with such Peltier elements (1), wherein a distance (32) of the Peltier elements (1) is adapted in such a way to the separation of the Peltier element (1) in the parts (28), that with the Peltier elements (1) formed from the parts (28) results in a desired surface-specific Temperierleistung.Die invention Furthermore, such a Peltier element (1) and such a heat exchanger (31).

Description

The present invention relates to a method for producing Peltier elements and such a Peltier element. The invention further relates to a method for producing a thermoelectric heat exchanger with a plurality of such Peltier elements and such a heat exchanger.

The use of Peltier elements in heat exchangers is well known. In this case, by applying an electrical potential, heat is pumped from one side of the Peltier element to the opposite side, thus achieving temperature control. It is also possible with the help of Peltier elements to convert heat into electricity, also known as Seebeck effect. Such Peltier elements usually have alternately arranged, interconnected P-type semiconductor and N-type semiconductor, wherein the P-type semiconductor are p-doped, whereas the N-type semiconductor are n-doped.

Such Peltier elements are usually produced by spacing the semiconductors with alternating doping. Subsequently, the semiconductors are electrically contacted with each other by arranging individual electrical connection elements, so-called "conductor bridges", in order to achieve the mode of operation of the Peltier element when an electrical potential is applied. The production of the Peltier elements thus requires a lot of effort and numerous manufacturing steps. In addition, the connecting elements and the Peltier elements, in particular with regard to their dimensions, their distance and their shape in each case to adapt to each other, which also leads to a difficult production of the Peltier element.

In an associated heat exchanger, several such Peltier elements may be provided. A power density of the heat exchanger or a surface-specific temperature control of the heat exchanger depends in particular on the number and density of the semiconductor and the Peltier elements. If a given area-specific tempering performance is to be realized, the respective Peltier elements must be adapted accordingly, in particular with regard to their dimensioning and arrangement. It may be necessary to provide different Peltier elements, in particular Peltier elements of different dimensions, in order in each case to achieve a predetermined tempering performance. This in turn requires that the Peltier elements are produced in separate manufacturing processes, which further complicates the production of the Peltier elements and the heat exchanger and in particular becomes less economical.

The present invention is therefore concerned with the task of providing improved or at least other embodiments for methods for producing a Peltier element and a thermoelectric heat exchanger with such Peltier elements and for such a Peltier element and such a heat exchanger, in particular by a simplified and / or cost-effective production and / or an increased variability.

This object is achieved by the subjects of the independent claims. Advantageous embodiments are the subject of the dependent claims.

The present invention is based on the general idea to produce a Peltier element, preferably several, ie two or more, Peltier elements, by processing a common carrier, wherein the processing material removal method steps and the provision of the carrier with different materials and / or material compositions, in particular layers , includes. The thus processed carrier can then optionally be divided into several parts to produce from the same carrier by the same processing steps several Peltier elements. The basic idea thus allows in particular a simplified production of at least one Peltier element. In addition, Peltier elements of different dimensions can be made in a simplified manner from the same carrier, so that the production of such differently dimensioned Peltier elements can be simplified and made more cost-effective. Thus, an increased variability of the Peltier elements can be achieved. The basic idea according to the invention also makes it possible to dispense with a relative positioning of the components of the respective Peltier element before the components are connected, so that errors caused thereby are at least reduced and an increased efficiency of the respective Peltier element and / or an associated heat exchanger is achieved.

According to the idea of the invention, in the method for producing the Peltier elements, first of all, said carrier is provided, which is electrically conductive. Next, the carrier is provided by an upper side and an upper side facing away from the upper side with receptacles which are in particular groove-shaped or each are a groove. In this case, in a longitudinal direction and in a direction transverse to the longitudinal direction transverse direction separated by separation sections recordings are introduced into the carrier such that in the transverse direction adjacent receptacles are alternately introduced from the top and bottom in the carrier. This means that in the transverse direction adjacent shots alternately on the top and the bottom are open. Thereafter, the receptacles open on the upper side and thus the receptacles introduced from the upper side into the carrier, hereinafter also referred to as receptacles of the upper side, are each equipped with a p-doped P-semiconductor section. In addition, the open on the bottom and thus introduced from the bottom in the carrier recordings, hereinafter referred to as shots of the bottom, each equipped with an n-doped N-semiconductor section. After loading the recordings, the respective semiconductor section is covered with an electrically conductive material, wherein the electrically conductive material is applied, in particular deposited, to the side of the respective semiconductor section facing the opening of the associated receptacle. In particular, the respective receptacle can be filled with the electrically conductive material. In a further, not necessarily subsequent, method step, a longitudinally extending recess is introduced in the respective separating section. This is done in such a way that adjacent recesses in the transverse direction are introduced alternately from the upper side and the lower side and are accordingly open alternately on the upper side and the lower side of the carrier. The introduction of the recesses is further carried out such that the respective recess forms a cavity separating the laterally adjacent semiconductor sections, so that these laterally adjacent semiconductor sections via a thus remaining, the recess bounding connecting portion through the support and the electrically conductive material is formed, are electrically and mechanically interconnected. In this case, the respective connection section connects such a P-semiconductor section to such an N-semiconductor section. This results in a Peltier element having a first thermal side and an opposite second thermal side, between which the semiconductor sections are arranged with transversely alternating doping. The connecting sections preferably form the thermal sides of the Peltier element.

The connecting sections preferably form opposite sides of the respective Peltier element, which exchange heat during operation, hereinafter also referred to as first thermal side and second thermal side, also known as cold side and hot side. The semiconductors of the respective Peltier element formed by the semiconductor sections are thus not arranged directly on the thermal sides of the Peltier element but between these sides.

It is understood that the present invention includes both variants in which initially the recordings are introduced and then populated, as well as variants in which initially recorded one of the pages introduced, these recordings each equipped with the associated semiconductor section and then the recordings the other side introduced and these recordings are each equipped with the associated semiconductor section. Also included are variants in which the recesses of the respective side are introduced after the application of the electrically conductive material or before the application of the electrically conductive material. Variants are also included, in which the respective recess is introduced before the insertion of the respective receptacle, after the insertion of the respective receptacle or together with the respective receptacle.

The loading of the recordings with the semiconductor sections preferably takes place by the application, in particular coating, of the respective semiconductor section to the associated side, i. Top or bottom, or in the associated recording. It is conceivable, in particular, to apply a corresponding semiconductor to this page for equipping the recordings of at least one of the pages. This means that a p-doped P-type semiconductor can be applied to the top side of the carrier, such that the receptacles of the topside are each equipped with such a P-type semiconductor section of the P-type semiconductor. When applying the P-type semiconductor, the P-type semiconductor thus at least partially reaches the receptacles which are open on the upper side, so that they are appropriately populated. Alternatively or additionally, an n-doped N-type semiconductor may be applied to the underside of the carrier, such that the receptacles of the underside are each equipped with such an N-type semiconductor portion of the N-type semiconductor. That is, the N-type semiconductor is at least partially applied in the receptacles open at the bottom. The P-type semiconductor thus forms the P-semiconductor sections in the recordings of the upper side. Accordingly, the N-type semiconductor forms the N-type semiconductor portions in the receptacles of the lower surface. Accordingly, the P-type semiconductor portions as well as the P-type semiconductor in the photographs below are to be understood as equivalent. The same applies to the N-type semiconductor in the recordings and the N-type semiconductor sections.

It is conceivable that at least two of the P-semiconductor sections have different compositions or are applied with different compositions. In particular, at least two of the P-semiconductor sections with different material compositions and / or different structures, for example sub-molecular structures, can be applied. It is also conceivable to apply at least two of the P-semiconductor sections with p-dopings of different levels. The same applies to the N-semiconductor sections, of which at least two with different compositions, in particular material compositions and / or structures, for example, sub-molecular structures, and / or n-dopants can be applied.

The electrically conductive carrier can in principle be of any desired design and / or made of any electrically conductive material. The carrier may for example be made of aluminum or an aluminum alloy. The support is preferably in one piece, i. coherent and / or uniform material, trained. In particular, the support may be plate-shaped and may have a thickness transverse to the transverse direction and transverse to the longitudinal direction, which facilitates the insertion of the receptacles and recesses in a simple manner, i. in particular without deformation of the carrier. It is conceivable to produce the carrier parallelepiped or to use a cuboid carrier. This offers the particular advantage that with a corresponding arrangement of the cuts, the resulting Peltier elements are the same size. Also possible is a circular carrier. One such carrier offers advantages in particular when applying the respective semiconductor or semiconductor section, in particular because less semiconductor material misses the carrier.

The carrier is preferably formed as a flat plate. Thus, the carrier provides sufficient stability and thickness during manufacture to simplify the process. It is also conceivable, however, to provide an elastically deformable carrier, for example in the form of a sheet metal part.

The alternately open arrangement of the receptacles means, in particular, that a receptacle which is open on the upper side is adjacent to receptacles in both orientations of the transverse direction, which receptacles are open on the underside and vice versa. The same applies to the recesses. That is, a recess open at the top in both orientations of the transverse direction is adjacent to recesses which are open on the underside and vice versa. Of course, this does not apply to the transversely outermost receptacles or recesses.

The longitudinally extending receptacles can in principle be inclined relative to each other. This means that not all recordings inevitably run parallel to each other or to the longitudinal direction. The same applies to the recesses, which need not necessarily run parallel to each other and / or to the longitudinal direction.

Embodiments in which the receptacles extend parallel to one another, in particular running parallel to the longitudinal direction, are preferred. It is also preferred if the recesses run parallel to one another, in particular running parallel to the longitudinal direction. Thus, the carrier can be used in an optimized way. In particular, a plurality of such Peltier elements can thus be produced in a simplified manner from the same carrier.

Preferably, after the introduction of the recesses, at least one section running obliquely to the longitudinal direction, ie having an inclination to the longitudinal direction or extending transversely thereto, is introduced into the carrier, and the carrier equipped with the semiconductor sections is thus divided into at least two parts. The respective part forms such a Peltier element. So there is at least one division, so that at least two separate parts arise, wherein the respective part of such a Peltier element. Thus, therefore, at least two Peltier elements are produced inexpensively and easily. By positioning the at least one cut, in particular a dimensioning of the respective Peltier element can be determined and thus a packaging of the Peltier elements can be realized in a simple manner with great variability.

If two or more such cuts are made, they preferably run parallel or are introduced parallel to one another and spaced apart from one another. Alternatively or additionally, it is preferred if the at least one cut extends in the transverse direction or is introduced running in the transverse direction. In particular, these variants enable a simplified division of the carrier and an increased efficiency in the production of the Peltier elements.

If two or more such cuts are made, it is conceivable that the cuts, in particular in the longitudinal direction, are introduced equidistantly or at different distances. If equidistant cuts are made, peltier elements are produced which are of equal size or have the same width transversely to the cutting direction, in particular in the longitudinal direction. If the cuts are made at different distances from each other, Peltier elements are produced with different dimensions or widths in the longitudinal direction.

It is conceivable, in particular, to divide the carrier into strips by the cuts, the respective strip being such a Peltier element.

In principle, the respective semiconductor can be applied by means of a corresponding technique in such a way on the associated side, that the semiconductor exclusively in the appropriate recordings is present and forms the semiconductor sections. Conceivable are techniques with which the semiconductor is introduced only locally in the field of recordings or in the recordings. Suitable, for example, suitably designed, in particular dimensioned, nozzles and the like for applying the semiconductor.

Preferably, at least one of the sides, i. the top and / or the underside, provided before loading the associated recordings with the semiconductor sections, in particular before the application of the associated semiconductor, with a removable from the carrier temporary layer, which is removed after the application of the associated semiconductor. The primary purpose of the respective temporary layer is to prevent semiconductors outside of the recordings from reaching the associated side of the carrier. Removal of the temporary layer also removes semiconductors present on the temporary layer so that subsequently the semiconductor sections remain. This allows a simplified loading of the images with the semiconductor sections, in particular the large-area, that is not local, application of the semiconductor. Thus, the production of the at least one Peltier element is simplified.

The respective temporary layer is preferably applied in a closed manner prior to the introduction of the receptacles of the associated side. Thus, the temporary layer is removed by introducing the recordings in the area of the recordings. In this state, the temporary layer thus forms a mask with free sections that correspond to the receptacles, in particular aligned so that during subsequent loading with the semiconductor sections, in particular before the application of the associated semiconductor, the semiconductor exclusively in the recordings and the rest on the temporary layer passes and thus the semiconductor sections are formed.

It is also conceivable to use a mask as a temporary layer, which has such free sections even before the recordings are introduced.

Advantageous embodiments are those in which such a temporary layer is used, which can be easily detached from the carrier and / or does not allow diffusion of the respective semiconductor or is impermeable to the semiconductor. It is conceivable, in particular, to use a lacquer layer and / or a polymer layer, in particular a polymer-containing lacquer layer, as the temporary layer. An easy release is given in particular if the temporary layer can be removed from the carrier by mechanical action and / or can be detached from the carrier by the use of a solvent, without damaging the semiconductor sections and / or the carrier.

The respective temporary layer can be applied to the associated side in any desired manner. It is conceivable to glue the temporary layer to the carrier. Embodiments are also possible in which the temporary layer is coated on the carrier.

The respective temporary layer removed from the carrier may be provided with the corresponding semiconductor as described above. Preferably, the semiconductor is released from the temporary layer and used further, ie recycled. For this purpose, the temporary layer can be dissolved by a corresponding treatment or released from the semiconductor or vice versa.

The loading of the recordings with the semiconductor sections, in particular the application of the semiconductor sections, preferably takes place in such a way that the respective semiconductor adheres to the carrier in the associated recordings or the respective semiconductor section. It is conceivable for this purpose to provide the carrier in the region of the receptacles with a diffusion barrier and / or a bonding agent, wherein these each have a thin extension, in particular in comparison to the semiconductor. Such diffusion barriers and / or adhesion promoters include, in particular, metals such as, for example, nickel, titanium or tungsten, and alloys, in particular of tungsten and titanium, for example WTi.

The picking up of the receptacles with the semiconductor sections preferably takes place in such a way that the associated receptacles are not completely filled with the semiconductor section in a height direction transverse to the transverse direction and transversely to the longitudinal direction and completely in the transverse direction and / or in the longitudinal direction. Thus, a sufficient mechanical and electrical connection of the semiconductor sections is achieved with the carrier and sufficient space for covering with the electrically conductive material, hereinafter also called filler left over, so that the filler sufficiently adheres to the carrier and thus electrically and mechanically with connected to the carrier.

Covering the stocked with the semiconductor sections recordings with the electrically conductive material or filler is advantageously carried out such that the material is introduced only in the recordings and the recordings are filled. It is conceivable to coat the semiconductor sections with the filler for this purpose. This may advantageously be the material from which the carrier is made. This is what happens a mechanically and / or electrically stable connection between the carrier and the material.

The covering of the semiconductor sections with the electrically conductive material or filling material can take place by applying the filling material on the entire associated side of the carrier, wherein the filling material is subsequently removed from the separating sections.

It is conceivable to apply a mask on the corresponding side, which has free sections corresponding to the receptacles, so that the electrically conductive material can only reach the receptacles when it is applied to the associated side. The mask is removed after applying the filler. This mask is in particular the temporary layer, which has the free sections corresponding to the receptacles. In this case, the temporary layer is removed after covering the semiconductor portions with the filler.

The covering of the semiconductor sections with the filling material preferably takes place in such a way that the associated receptacle is completely filled up.

This is preferably done in such a way that the filling material is aligned with the adjacent separating sections of the carrier and / or forms a closed plane. Thus, in particular, a heat-exchanging surface of the Peltier elements during operation is increased and the efficiency of the Peltier elements is improved.

It is conceivable to apply the electrically conductive material or filling material over a large area on at least one of the sides, such that the filling material also reaches the carrier outside the receptacles. In this case, the associated thermal side of the later at least one Peltier element is at least partially formed by the filling material in the region of the receptacles and outside the receptacles.

The filler material does not necessarily have a flat surface on the side facing away from the associated semiconductor section or the associated semiconductor sections. This means that the filling material can also have an uneven surface. Preferred are variants in which the filling material has such a flat planar surface.

The recordings are preferably introduced into the carrier in such a way that they have such a depth extending transversely to the longitudinal direction and transversely to the transverse direction that the laterally adjacent semiconductor sections are arranged in overlapping depth regions or in a same depth or in a flat parallelepiped lie in a predetermined depth. This also means that the depths are such that alternately shots of the upper side and the lower side are arranged at a predetermined depth in the transverse direction. It is conceivable that the recordings each have the same depth or are introduced with the same depth.

The height of the respective semiconductor or semiconductor section running transversely to the longitudinal direction and transversely to the transverse direction can in principle be arbitrary. In particular, the respective semiconductor section can have a height between 100 μm and 300 μm.

The respective recording can be arbitrarily dimensioned. In particular, a transverse width of the respective receptacle can be between 300 μm and 1000 μm.

The particular semiconductor section, in particular the respective semiconductor, can in principle be introduced in any desired manner onto the associated side, in particular into the associated receptacles. Preferably, at least one of the semiconductor sections, in particular one of the semiconductors, i. the P-type semiconductor and / or the N-type semiconductor, coated on the associated side, in particular in the associated recordings. This allows, in particular together with the temporary layer, a simple placement of the images with the semiconductor sections.

Embodiments in which at least one of the semiconductors is applied to the entire associated side are preferred, the semiconductor applied outside the receptacles being removed, in particular by the removal of the temporary layer. As a result, measures for local application or coating of the semiconductor can be omitted and thus the production of the Peltier elements can be simplified.

It is conceivable to apply at least one of the semiconductor sections, in particular one of the semiconductors, by a coating method. Preferably, for applying or coating at least one of the semiconductor sections, in particular one of the semiconductors, a vacuum-based coating method is used.

Sputtering or cathode sputtering is particularly preferably used. During sputtering, the smallest constituents, in particular atoms or groups of atoms, are released from a target by bombardment with ions and then settle on the support and thus coat the support, in particular the receptacles. The ions for dissolving the smallest constituents from the target are thereby accelerated by the use of an electric potential, wherein the energy of the ions represents a so-called sputtering energy. Sputtering facilitates a, in particular uniform, coating of the corresponding side of the carrier or the corresponding receptacles. Thus, therefore, the production of the Peltier elements can be simplified and realized with high precision.

If at least one such P-semiconductor section and at least one such N-semiconductor section, in particular both semiconductors, are applied by means of sputtering, it is conceivable first to coat one of the sides and then the other side with the same sputtering arrangement. For example, the upper side may be first coated with the P-type semiconductor, and then the lower surface may be coated with the same N-type semiconductor sputtering arrangement. For this purpose, the carrier can be turned and / or the sputtering arrangement moved and the target can be changed. It is also conceivable to provide two sputter arrangements in one device, wherein the top side is coated with one arrangement and the bottom side with the other arrangement.

Variants prove to be advantageous in which at least one sputtering condition for producing at least one of the semiconductor sections is varied during sputtering. The variation of the sputtering condition leads to a structure of the semiconductor section which changes along the thickness of the semiconductor section thus produced, in particular crystalline. In particular, a so-called superlattice, also called a superlattice, can be produced, which has an increased mechanical and / or thermomechanical effects stability and thus to increased stability of the manufactured Peltier elements and / or increased life thereof and / or, in particular By reducing the unwanted thermal conduction of the phonons, it leads to improved thermoelectric efficiency.

In principle, any desired sputtering conditions can be varied. In particular, it is conceivable to vary the sputtering energy. The variation can in principle be of any type, wherein preferably periodic changes in the sputtering condition are used.

The electrically conductive material or the filling material can in principle be applied by any method, wherein the filling material is preferably coated in order to simplify the production.

Sputtering can also be used to apply the filling material. That is, the electrically conductive material for covering at least one of the semiconductors is applied by sputtering. In this way, in particular, an advantageous adhesion of the filling material to the carrier and / or the associated semiconductor can be achieved.

It is conceivable to use the same sputtering arrangement for sputtering the filling material as for sputtering at least one of the semiconductors. Required is only an exchange or change of the corresponding target. As a result, the production of the Peltier elements can be simplified and / or implemented more cost-effectively.

It is also conceivable to carry out the application of the respective semiconductor or the semiconductor sections and / or the filling material in a multi-chamber sputtering system which has a plurality of successively arranged chamber through which the carrier is guided successively, in particular in the manner of a conveyor belt , In the respective chamber, a corresponding sputter arrangement is provided for coating the carrier with the semiconductor or the semiconductor sections or for applying the electrically conductive material or the filling material.

Preferred variants provide for such a reaction of the method, in particular application of the semiconductors, that the P-semiconductor portions or the P-type semiconductor in the receptacles of the upper side are dimensioned differently than the N-type semiconductor portions or the N-type semiconductors in the footage of the bottom. That is to say, the P-semiconductor sections have a different size, in particular in the transverse direction and / or in the height direction, than the N-semiconductor sections. The different dimensioning of the P-semiconductor sections in comparison to the N-semiconductor sections leads to thermodynamic and / or thermomechanically advantageous effects, which in particular have an increased thermo-mechanical stability of the respective Peltier element result. Due to the different dimensions, the respective Peltier element can thus reduce thermally induced mechanical loads improved.

The different dimensioning of the P-semiconductor sections compared to the N-semiconductor sections can be realized in principle in any way. It is conceivable, in particular, that the receptacles of the upper side are introduced into the carrier with another transverse width in the transverse direction than the receptacles of the underside. Show hereby the P-type semiconductor portions have a different width than the N-type semiconductor portions.

It is also conceivable to apply the P-type semiconductor with another height extending in the height direction than the N-type semiconductor. As a result, the P-type semiconductor portions have a different height than the N-type semiconductor portions.

The recordings and the recesses can each be introduced into the carrier in any desired manner. For this purpose, each material is removed. Accordingly, material removal measures are used.

Embodiments prove to be advantageous in which the receptacles and / or recesses are introduced with at least one saw blade. As a result, small or narrow receptacles or recesses along the transverse direction can be realized, in particular along the longitudinal direction.

Embodiments in which the recesses are introduced with rounded corners are advantageous. In particular, the corners of the respective recess facing away from the associated opening are rounded. As a result, in particular notch stresses are avoided or at least reduced, so that the thermo-mechanical stability of the Peltier elements is improved.

It is conceivable to provide the Peltier element on the outside with a dielectric and thermally conductive and thus an electrically insulating and heat-conductive layer after covering the stocked with the semiconductor sections recordings with the filler. The situation prevents an external short circuit within the respective Peltier element, in particular in the associated application. Such layers are usually used in an associated application, for example an associated heat exchanger, so that in this way a subsequent separate individual provision of the respective Peltier element with such a layer can be dispensed with. Preferably, the layer is applied after the introduction of the recesses, wherein this takes place in such a way that the layer covers the electrically conductive material and / or the carrier outside the recesses. As a result, an improved thermal efficiency of the respective Peltier element is achieved.

The respective dielectric and thermally conductive layer can in principle be of any desired design. In particular, it can be a plate, a film, a film or a coating. Accordingly, the respective thermally conductive layer can be applied, for example, by a coating method. It is also conceivable to dip the carrier equipped with the semiconductor sections and provided with the filling material, in particular also with the recesses, into a corresponding bath in order to apply such a dielectric and thermally conductive layer.

It is conceivable to fill the recesses before providing the layer with an electrically and thermally insulating material. Thus, an improved thermal insulation between the thermal sides of the respective Peltier element and / or the adjacent semiconductor sections is achieved. In addition, this improves the mechanical stability of the respective Peltier element. The thermally insulating material has a lower thermal conductivity than the layer. In particular, the thermally insulating material has a thermal conductivity of less than 0.1 W / (m * K), in particular less than 0.05 W / (m * K).

It is understood that in addition to the method for producing the Peltier elements, a Peltier element produced in this way also belongs to the scope of this invention.

In an advantageous development of the solution according to the invention, the Peltier elements produced according to the invention are used for producing a thermoelectric heat exchanger. In this case, a desired surface-specific temperature control of the heat exchanger is determined or specified. Subsequently, the Peltier elements are produced according to the invention, wherein the distance of the cuts in the longitudinal direction and thus a longitudinal width of the respective Peltier element and subsequent distances of the Peltier elements in the heat exchanger to each other are adapted to each other such that this results in the desired area-specific tempering. In particular, Peltier elements with different widths can be provided by adjusting the distances of the cuts in the longitudinal direction.

It is conceivable, in particular, to arrange the Peltier elements equidistantly in heat exchangers. In this case, therefore, an adaptation of the distances of the cuts and thus the width of the Peltier elements, in order to realize the desired surface-specific temperature control.

It is conceivable, alternatively or in addition to said dielectric and thermally conductive layer, to attach a dielectric and thermally conductive layer to the Peltier elements after arranging the Peltier elements in the heat exchanger. Thus, in particular, such a dielectric and heat-conductive layer adjoining and closing at least two adjacent Peltier elements can be realized.

It should be noted that in addition to the method for producing the heat exchanger and a heat exchanger produced in this way belongs to the scope of this invention.

Other important features and advantages of the invention will become apparent from the dependent claims, from the drawings and from the associated figure description with reference to the drawings.

It is understood that the features mentioned above and those yet to be explained below can be used not only in the particular combination given, but also in other combinations or in isolation, without departing from the scope of the present invention.

Preferred embodiments of the invention are illustrated in the drawings and will be described in more detail in the following description, wherein like reference numerals refer to the same or similar or functionally identical components.

• 1 einen Schnitt durch einen Träger bei einem ersten Verfahrensschritt zum Herstellen von Peltierelementen,
• 2 den Schnitt aus 1 nach einem nachfolgenden Verfahrensschritt,
• 3 eine Draufsicht beim in 2 gezeigten Zustand,
• 4 die Ansicht aus 2 bei einem anschließenden Verfahrensschritt,
• 5 die Ansicht aus 4 nach dem Durchführen des in 4 gezeigten Verfahrensschritts,
• 6 eine Draufsicht beim in 5 gezeigten Zustand,
• 7 die Ansicht aus 5 nach dem Durchführen eines weiteren Verfahrensschritts,
• 8 eine Draufsicht beim in 7 gezeigten Zustand,
• 9 den Schnitt aus 7 nach einem weiteren Verfahrensschritt,
• 10 eine Draufsicht beim in 9 gezeigten Zustand,
• 11 den Schnitt aus 9 nach einem weiteren Verfahrensschritt,
• 12 eine Draufsicht beim in 11 gezeigten Zustand,
• 13 den Schnitt aus 11 bei einem weiteren Verfahrensschritt,
• 14 den Schnitt aus 13 nach dem Durchführen des in 13 gezeigten Verfahrensschritts,
• 15 eine Draufsicht beim in 14 gezeigten Zustand,
• 16 eine Draufsicht entsprechend 15 bei einem anschließenden Verfahrensschritt,
• 17 eine seitliche Ansicht auf Peltierelemente,
• 18 einen Schnitt durch einen thermoelektrischen Wärmeübertrager.

It show, each schematically

• 1 a section through a carrier in a first method step for producing Peltier elements,
• 2 the cut out 1 after a subsequent process step,
• 3 a top view while in 2 shown condition,
• 4 the view 2 in a subsequent process step,
• 5 the view 4 after performing the in 4 shown process step,
• 6 a top view while in 5 shown condition,
• 7 the view 5 after performing a further process step,
• 8th a top view while in 7 shown condition,
• 9 the cut out 7 after a further process step,
• 10 a top view while in 9 shown condition,
• 11 the cut out 9 after a further process step,
• 12 a top view while in 11 shown condition,
• 13 the cut out 11 in a further process step,
• 14 the cut out 13 after performing the in 13 shown process step,
• 15 a top view while in 14 shown condition,
• 16 a plan view accordingly 15 in a subsequent process step,
• 17 a side view on Peltier elements,
• 18 a section through a thermoelectric heat exchanger.

The following is based on the 1 to 17 a method for producing Peltier elements 1 described how they are in 17 are shown.

In a first, in 1 1, a carrier 2 is initially provided. The carrier 2 is electrically conductive, for example, aluminum-containing, in particular made of aluminum or an aluminum alloy. The carrier 2 is plate-shaped and points along a transverse direction 3 as well as one transverse to the transverse direction 3 extending longitudinal direction 4 expansions, which are much larger, in particular at least three times greater than the extension of the carrier 2 in a direction transverse to the transverse direction 3 and transverse to the longitudinal direction 4 extending height direction 5 , The carrier 2 points in the height direction 5 a top 6 as well as one from the top 6 opposite bottom 7 on. The top 6 and the bottom 7 are closed and flat as shown.

In a subsequent process step, the carrier 2 at the top 6 and the bottom 7 each with a temporary layer 8th provided, in particular coated. Such a condition of the carrier 2 is in 2 to see. This will be the top 6 and the bottom 7 in each case completely with the associated temporary layer 8th Mistake. 3 shows a top view of the top 6 due to the application of the temporary layer 8th on the top 6 not visible. In 3 It can be seen that the plate-shaped carrier 2 is formed round or circular. The respective temporary layer 8th is designed and / or on the carrier 2 that they are different from the carrier 2 solve, in particular without the carrier 2 to damage. As a temporary layer 8th can each have a paint layer 36 , a polymer layer 37 , in particular a polymer-containing lacquer layer 36 ' , be used.

Corresponding 4 becomes the one with the respective temporary layer 8th provided carriers 2 processed material removed. Saw blades can do this 9 are used, each with different saws 10 or a common saw 10 are assigned. At the in 4 example shown are on the top 6 and the bottom 7 in each case several such saw blades 9 provided, which is about a substantially parallel to the transverse direction 3 extending axis of rotation 11 rotate. The on the top 6 arranged saw blades 9 be in the direction the top 6 moved, so that they are from the carrier 2 Remove material. This also causes the temporary layer in the corresponding sections 8th away. Similarly, those on the bottom 7 arranged saw blades 9 in the direction of the bottom 7 moved so that they are in the appropriate sections the temporary layer 8th and material of the carrier 2 remove.

The result of in 4 is shown in the 5 and 6 shown. So it will be shots 12 in the carrier 2 brought in. The pictures 12 are along the transverse direction 3 alternately from the top 6 and the bottom 7 in the carrier 2 brought in. That is, in the transverse direction 3 adjacent shots 12 alternately on the top 6 and the bottom 7 are open. The pictures 12 each extend in the longitudinal direction 4 and are in the transverse direction 3 by a respective separating section 13 separated from each other. In the example shown, the pictures show 12 by an appropriate dimensioning and arrangement of the saw blades 9 one in each case in the transverse direction 3 running width 14 , below recording width 14 called, on and are in the transverse direction 3 arranged equidistantly. Ie that the separating sections 13 one in the transverse direction 3 extending same width 15 , below separation section width 15 called, have. Of course, there are also different recording widths 14 and / or separation section widths 15 possible. After this process step so are the top 6 or the bottom 7 in the field of recordings 12 uncovered, whereas they are outside the shots 12 through the respective temporary layer 8th are covered. In 6 it can be seen that the shots 12 each over the entire, in the longitudinal direction 4 extending extension of the carrier 2 extend. This preferably applies to the recordings 12 the bottom 7 ,

In addition, the respective temporary layer 8th by introducing the recordings 12 in the field of recordings 12 away. This is the temporary layer 8th a mask 40 that with the shots 12 corresponding free sections 41 having.

In 5 is to recognize that the respective admission 12 the carrier 2 does not penetrate. Ie: one in the height direction 5 running depth 16 the respective recording 12 in the carrier 2 , below recording depth 16 called, is smaller than one in the height direction 5 running thickness 17 of the carrier 2 , In the example shown, all recordings show 12 the same recording depth 16 on. The recording depth 16 the recordings 12 is chosen such that in a height direction 5 extending, predetermined depth range 18 alternately on the top 6 open shots 12 , below also recordings 12 the top 6 called, and on the bottom 7 open shots 12 , below shots 12 the bottom 7 called, are arranged.

In a subsequent process step, which in the 7 and 8th is indicated on the top 6 a p-type P-type semiconductor 19 and on the lower side 7 an n-doped N-type semiconductor 20 is applied. As in 8th indicated, while the entire surface provided with the respective semiconductor 19 , 20 provided. This is done in particular by a coating method, for example by sputtering. Before applying the respective semiconductor 19 , 20, a diffusion barrier, not shown, and / or a bonding agent, not shown, for example, nickel, titanium, tungsten or WTi can be applied. The respective semiconductor 19 . 20 coated in the area of the recordings 12 the top 6 or bottom 7 of the carrier 12 and outside the recordings 12, the corresponding temporary layer 8th , This results in the receptacles 12 of the top 6 sections 21 of the P-type semiconductor 19, hereinafter also referred to as P-type semiconductor portions 21, in the transverse direction 3 are separated from each other and each in the longitudinal direction 4 run. In the pictures 12 the bottom 7 arise sections 22 of the N-type semiconductor 20, hereinafter also referred to as N-type semiconductor portions 22, in the longitudinal direction 5 run and in the transverse direction 3 spaced apart from each other. The pictures 12 the top 6 are thus equipped with the P-type semiconductor 19 or respectively with such a P-type semiconductor portion 21, whereas the recordings 12 the underside with the N-type semiconductor 20 or such N-type semiconductor portion 22 are equipped. It is between in the transverse direction 3 adjacent P-type semiconductor portions 21 in the transverse direction 3 such N-type semiconductor portion 22 is arranged. Analogous to this is between in the transverse direction 3 adjacent N-semiconductor portions 22 in the transverse direction 3 such a P-type semiconductor portion 21 is arranged. In the said depth range 18 of the carrier 2 is in the transverse direction 3 alternately, such a P-type semiconductor portion 21 and such an N-type semiconductor portion 22 are arranged.

When sputtering the semiconductors 19 . 20 For example, a sputtering energy, in particular periodically, is varied so that the semiconductor 19 . 20 or the respective semiconductor section 21 . 22 a superstructure, also called super lattice has. The respective semiconductor section 21 . 22 has a height direction 5 running height 38 on, with the heights 38 P-type semiconductor portions 21 are different, especially larger, than the heights 38 N-type semiconductor portions 22.

In a subsequent, in the 9 and 10 indicated method step, the respective temporary layer 8th from the top 6 and the bottom 7 removed, taking in the 9 and 10 a condition can be seen in which the respective temporary layer 8th already removed. By removing the respective temporary layer 8th becomes the one on the respective temporary layer 8th applied semiconductors 19 . 20 away. As a result, the respective semiconductor 19 , 20 outside the shots 12 away. Accordingly, the top is 6 exclusively in the shots 12 provided with the P-type semiconductor 19, that is, at the top 6 exclusively in the shots 12 such P-type semiconductor portions 21 are present. Analogous to this is at the bottom 7 exclusively in the shots 12 each such N-type semiconductor section 22 is provided. At the in 10 Thus, the plan view shown are the P-semiconductor sections 21 and the top 6 of the carrier 2 in the transverse direction 2 to see alternately. In the 10 indicated N-semiconductor portions 22 are not visible in the view shown and shown hatched accordingly to illustrate their position and their course.

After that, as in the 11 and 12 shown with the semiconductors 19 . 20 or semiconductor sections 21 . 22 stocked shots 12 with an electrically conductive material 23 provided such that the semiconductors 19 . 20 or semiconductor sections 21 . 22 with the electrically conductive material 23 , below also filler 23 called are covered. The 11 and 12 show a state where the semiconductor sections 21 . 22 or the recordings 12 already with the filling material 23 are covered. In this state, the semiconductors 19 . 20 or semiconductor sections 21 . 22 neither from the top 6 still the bottom 7 to see. Accordingly, the semiconductor sections 21 . 22 in 12 hatched to indicate their position. The pictures 12 be completely with the filler 23 filled, which is why in 11 are shown in dashed lines. The electrically conductive material 23 is preferably applied to the semiconductor sections by a coating method, more preferably by sputtering 21 . 22 or in the recordings 12 brought. The pictures 12 the top 6 be like in 11 indicated, so with the electrically conductive material 23 filled that electrically conductive material 23 with the top 6 of the carrier 2 outside the recordings 12 forms a closed flat surface. The same applies to the recordings 12 the bottom 7 , which are so with the electrically conductive filler 23 be filled that the electrically conductive material 23 with the bottom 7 of the carrier 2 outside the recordings 12 forms a closed flat surface. The electrically conductive material 23 is preferably the same material from which the carrier 12 is made, ie in particular aluminum or an aluminum alloy.

Corresponding 13 is in a subsequent process step in each separation section 13 Material of the carrier 2 away. For this purpose, for example, suitably dimensioned and relatively arranged saw blades 9 used, which are each about a substantially parallel to the transverse direction 3 extending axis of rotation 3 be rotated. The on the top 6 arranged saw blades 9 be in the direction of the top 6 moved to material of the carrier 2 to remove. Similarly, those on the bottom 7 arranged saw blades 9 towards the top 7 moved to material of the carrier 2 to remove.

As a result, as in the 14 and 15 shown, in the longitudinal direction 4 running recesses 24 in the dividing sections 13 introduced, such that in the transverse direction 3 adjacent recesses 24 alternately on the top 6 and the bottom 7 of the carrier 2 are open. That is, the recesses 24 between in the transverse direction 3 adjacent P-type semiconductor portions 21 and N-type semiconductor portions 22 alternately from the top 6 and the bottom 7 are introduced. The recesses 24 get so far into the carrier 2 introduced that between the in the transverse direction 3 adjacent semiconductor sections 21 . 22 one cavity each 25 arises in the transverse direction 3 adjacent semiconductor sections 21 . 22 in the transverse direction 3 separates. As a result, they are in the transverse direction 3 adjacent semiconductor portions 21, 22, in particular exclusively, by a connecting portion 26 mechanically and electrically connected to each other, which the associated recess 24 or the associated cavity 25 limited and made of the material of the wearer 24 and the electrically conductive material 23 or filling material 23 composed. At the in 15 shown top view are the semiconductor sections 21 . 22 not visible and accordingly hatched. As in particular in 14 it can be seen, the recesses point 24 rounded corners on the bottom side 35 on. This is achieved in particular by a correspondingly rounded design of the saw blades 9. Already hereby is a Peltier element 1 made that along the top 6 a first thermal side 29 and along the bottom 7 a second thermal side 30 having. The first thermal side 29 is doing by the after insertion of the recesses 24 remaining top 6 of the carrier 2 and in the recordings 12 the top 6 introduced filling material 23 educated. The second thermal side 30 is through after the insertion of the recesses 24 remaining bottom 7 of the carrier 2 and that in the recesses 12 the bottom 7 introduced filling material 23 educated.

The respective connection section 26 has an in 14 to see cross-section with a base page 41 and two protruding thighs 42 on. Here are along the transverse direction 3 connecting sections 26 with alternating orientation or oppositely projecting legs 42 arranged. The bases 41 form the first thermal side 29 or the second thermal side 30 of the Peltier element 1 , One of the thighs 42 of the respective connection section 26 is end to one of the P-semiconductor portions 21 and the other leg 42 end with the in the transverse direction 3 adjacent N-type semiconductor portion 22 mechanically and electrically connected.

It is imaginable, on the respective side 6 . 7 a single such saw blade 9 insert, by a relative adjustment to the carrier 2 several such shots 12 and / or recesses 24 brings. Also, a single such saw blade 9 by an additional relative movement to the wearer 2 such shots 12 and / or recesses 24 on both sides 6 . 7 of the carrier 2 contribute.

16 shows the view 15 , Indicated is an optional subsequent process step, in which in the carrier 2 , as indicated by dashed lines, in the transverse direction 3 running and in the longitudinal direction 4 spaced apart cuts 27 be introduced to the with the semiconductor sections 21 . 22 equipped carrier 2 or the Peltier element 1 in the 14 and 5 into different parts 28 to divide, in particular, in strips 44, of which in 17 three are visible. In the example shown are the sections 27 longitudinal 4 equidistant, thus pointing in the longitudinal direction 4 an equal distance 43 on. This forms the respective part 28 such a Peltier element 1 ,

After the insertion of the recesses 24 and preferably before introducing the cuts 27 Can the one with the semiconductor sections 21 . 22 equipped carriers 2 on the outside, for example by immersion in a corresponding, not shown bath, with a dielectric, and thus electrically insulating, and thermally conductive layer 39 be provided. The location 39 is preferably outside of the recesses 24 applied so that they are within the recesses 24 not available. This can be done by filling the recesses 24 with an electrically and thermally insulating material, not shown, before being provided with the layer 39 be realized.

The method according to the invention thus makes it possible, in a simple and cost-effective manner, for at least two Peltier elements 1 manufacture. The dimensioning of the Peltier elements 1 can thereby by the training or dimensioning of the carrier 2 vary. In the example shown, due to the circular or round design of the carrier 2 not all Peltier elements 1 an equal, in the transverse direction 3 running length 34 on. A constant length 34 of all Peltier elements 2 For example, by a cuboid training of the carrier 2 will be realized.

18 shows a simplified simplified thermoelectric heat exchanger 31 , The heat exchanger 31 has for tempering a fluid, an article and the like, a plurality of such Peltier elements 1 on. In the example shown, the heat exchanger 31 be used for tempering a rechargeable battery, not shown, the surface heat transfer with the heat exchanger 31 will be contacted. A temperature control of the heat exchanger 1 , in particular a surface-specific temperature control of the heat exchanger 31 is, in particular, by the proportion of the heat-transfer contacted with the accumulator surface of the heat transfer 1 certainly that of the Peltier elements 1 is busy. In the present example, the Peltier elements 1 of the heat exchanger 31 parallel and in a distance direction, each with an equal distance 32 to each other and thus arranged equidistantly. The respective Peltier element 1 in this case has a width extending in the direction of spacing 33 on, across the length 34 of the Peltier element 1 runs. The width 33 of the respective Peltier element 1 is determined by the distance 43 the cuts 27 given in the carrier 2 (see. 16 ) are introduced. Accordingly, the desired surface-specific temperature control already in the production of Peltier elements 1 through the respective distance 43 between in the longitudinal direction 4 neighboring cuts 27 influenced and determined. Thereby the distances become 32 the Peltier elements 1 and the distance 29 the cuts 27 and thus the width 33 of the respective Peltier element 1 already in the production of the Peltier elements 1 coordinated so that the desired temperature control results.

Claims (19)

Method for producing a Peltier element (1), comprising the following steps: - providing an electrically conductive support (2), - inserting receptacles (12) extending in a longitudinal direction (4) and separated in a transverse direction (3) by separating sections (13) in the carrier (2), such that in the transverse direction (3) adjacent receptacles (12) alternately on an upper side (6) and a side facing away from the upper side (7) of the carrier (2) are open, - loading the on the Top (6) open receptacles (12) each with a p-type P-semiconductor portion (21) and the bottom (7) open receptacles (12) each having an n-doped N-semiconductor portion (22) Covering the semiconductor sections (21, 22) with an electrically conductive material (23), inserting recesses (24) extending in the longitudinal direction (4) in the separating sections (13), such that they are adjacent in the transverse direction (3) Recesses (12) alternately on the top (6) and on the underside (7) of the carrier (2) are open and such that the respective recess (24) forms a cavity (25) which separates the semiconductor sections (21, 22) adjacent to each other in the transverse direction (3). Method according to Claim 1 , characterized in that the carrier (2) after the introduction of the recesses (24) by introducing at least one inclined to the longitudinal direction (4) extending cut (27) is divided into at least two separate parts (28) and the respective part (28 ) forms such a Peltier element (1). Method according to Claim 1 or 2 , characterized in that - the loading of the receptacles (12) with the P-semiconductor sections (21) by the application of a p-doped P-type semiconductor (19) on the upper side (6), and / or, - the loading of the receptacles (12) with the N-semiconductor sections (22) by the application of an n-doped N-type semiconductor (20) on the underside (7). Method according to one of Claims 1 to 3 , characterized in that - prior to equipping the receptacles (12) with the P-semiconductor sections (21), a temporary layer (8) detachable from the carrier (2) is applied to the upper side (6) and after being populated with the P-semiconductor sections Semiconductor sections (21) is removed, and / or - that prior to equipping the receptacles (12) with the N-semiconductor sections (22) from the carrier (2) releasable temporary layer (8) applied to the underside (7) and removed after loading with the N-type semiconductor portions (22). Method according to Claim 4 , characterized in that a lacquer layer (36) and / or a polymer layer (37) and / or a free section (41) in the region of the receptacles (12) having mask (40) is used as a temporary layer (8). Method according to one of Claims 1 to 5 , characterized in that at least one of the semiconductor sections (21, 22) for loading the associated receptacles (12) is applied by means of sputtering. Method according to Claim 6 , characterized in that during sputtering at least one of the semiconductor sections (21, 22) at least one sputtering condition varies, in particular periodically changed, is. Method according to one of Claims 1 to 7 , characterized in that the electrically conductive material (23) for covering the semiconductor sections (21, 22) is applied by sputtering. Method according to one of Claims 1 to 8th , characterized in that the method is carried out such that the P-semiconductor sections (21) in the transverse direction (3) and / or in a direction transverse to the transverse direction (3) and transverse to the longitudinal direction (4) height direction (5) have different size than the N-type semiconductor portions (22). Method according to one of Claims 1 to 9 , Characterized in that on the top (6) open recesses (12) with another in the transverse direction (3) running width (14) in the carrier (2) are introduced than that on the underside (7) open recesses (12 ). Method according to one of Claims 1 to 10 , characterized in that the P-semiconductor sections (21) are applied with another height (38) running in a height direction (5) running transversely to the transverse direction (3) and transverse to the longitudinal direction (4) than the N-semiconductor sections. Sections (22). Method according to one of Claims 3 to 10 , characterized in that the carrier (2) provided with the receptacles (12) is flat with the P-type semiconductor (19) and / or from the lower surface (7) with the N-type semiconductor (20) from the upper side (6). is provided. Method according to one of Claims 1 to 12 , characterized in that the receptacles (12) and / or the recesses (24) are introduced with at least one saw blade (9). Method according to one of Claims 1 to 12 , characterized in that recesses (24) are introduced with rounded corners (35). Method according to one of Claims 1 to 14 , characterized in that after covering the semiconductor sections (21, 22) with the electrically conductive material (23), in particular after the introduction of the recesses (24), on the outside a dielectric and thermally conductive layer (39) is applied. Method for producing a thermoelectric heat exchanger (31) having a plurality of Peltier elements (1), comprising the following steps: determining a desired surface-specific temperature control performance of the heat exchanger (31), producing Peltier elements (1) according to one of Claims 2 to 15 in which at least two cuts (27) are made and a spacing (43) of the cuts (27) running in the longitudinal direction (4) into the carrier (2) and the later distances (32) of the Peltier elements (1) in the heat exchanger (31). be adapted to each other so that the desired tempering results. Method according to Claim 16 , characterized in that the Peltier elements (1) in the heat exchanger (31) are arranged equidistantly. Peltier element (1) for a thermoelectric heat exchanger (31), with alternately arranged and electrically contacted P-semiconductor sections (21) and N-semiconductor sections (22), wherein the Peltier element (1) according to the method according to one of Claims 1 to 15 is made. Thermoelectric heat exchanger (31) with a plurality of Peltier elements (1), which are arranged at a distance (32) from each other, wherein the heat exchanger (31) according to the method of Claim 16 or 17 is made.

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