DE102017105017A1 - PREPARATION OF RADIATION-EMITTING COMPONENTS - Google Patents

Abstract

The present invention relates to a method for producing radiation-emitting components. The method comprises providing a metallic submount and forming metallic features on the submount by performing at least one metal deposition process using at least one masking layer. It is further provided an arranging a reflective embedding material enclosing the metallic structural elements on the subcarrier and removing the subcarrier, so that a carrier having the structural elements and the embedding material is provided with two opposite main sides. The main sides of the carrier are formed by the structural elements and the embedding material. The method further comprises arranging radiation-emitting semiconductor chips on the carrier, arranging a conversion material for radiation conversion on the carrier provided with the semiconductor chips, and performing a singulation process for forming separate radiation-emitting components. The invention further relates to a radiation-emitting component.

Description

The present invention relates to a method for producing radiation-emitting components. The invention further relates to a radiation-emitting component.

Today, in the field of general lighting, components with one or more radiation-emitting semiconductor chips are increasingly being used. Due to technical and economic market needs, components with sapphire chips have become established. These are LED chips (Light Emitting Diode) with a radiation-transparent chip substrate made of sapphire, which can emit light radiation in all directions. Because of this property, the surface finish of carrier substrates of the semiconductor chips plays a crucial role. The substrates should have a high reflectivity and long-term stability with respect to the high-energy radiation of the semiconductor chips (blue light radiation or UV radiation).

Conventional radiation-emitting components have ladder-frame-based carrier substrates. Such substrates include a leadframe which may be provided with a reflective metallic coating. It is possible, for example, a silver coating, which is susceptible to corrosion. As a result, ladder-frame-based substrates with a gold-palladium coating are generally used. While such substrates are more expensive, less reflective, and more sophisticated in the LED manufacturing chain, they are preferred to the silver-coated substrates because of silver corrosion.

The object of the present invention is to specify an improved method for producing radiation-emitting components as well as an improved radiation-emitting component.

This object is solved by the features of the independent claims. Further advantageous embodiments of the invention are specified in the dependent claims.

According to one aspect of the invention, a method for producing radiation-emitting components is proposed. The method comprises providing a metallic submount and forming metallic features on the submount by performing at least one metal deposition process using at least one masking layer. It is further provided an arranging a reflective embedding material enclosing the metallic structural elements on the subcarrier and removing the subcarrier, so that a carrier having the structural elements and the embedding material is provided with two opposite main sides. The main sides of the carrier are formed by the structural elements and the embedding material. The method further comprises arranging radiation-emitting semiconductor chips on the carrier, arranging a conversion material for radiation conversion on the carrier provided with the semiconductor chips, and performing a singulation process for forming separate radiation-emitting components.

In the method, a carrier is provided which comprises a reflective embedding material and metallic structural elements embedded therein. At least a part of the metallic structural elements can serve as electrical conductor structures of the carrier. The carrier also has two opposite major sides. These are sides of the beam with the largest lateral extent. The main sides of the carrier, which can be made flat, are formed by the metallic structural elements and the embedding material. In this embodiment, metallic structural elements are freely accessible on the two main sides of the carrier. At least a part of the structural elements may extend from one to the other main side of the carrier, and thus form vias.

To realize this design of the carrier, a metallic auxiliary carrier is used, on which first the metallic structural elements are formed. This is done by performing at least one metal deposition process. In this case, the shape of the structural elements is determined by means of at least one structured masking layer. The at least one masking layer may have openings within which the metal deposition can take place. When using a masking layer, it can be formed on the auxiliary carrier. When using a plurality of masking layers, a masking layer may be formed on the subcarrier, and another masking layer may be formed on the previously formed masking layer, respectively. It is possible first to form a plurality of mutually arranged masking layers on the auxiliary carrier and subsequently to deposit the metallic structural elements. An alternative procedure is to form at least one masking layer on the auxiliary carrier and to carry out at least one metal deposition, and then to form at least one further masking layer thereon and to carry out at least one further metal deposition.

After forming the metallic structural elements, the at least one masking layer can be removed. Subsequently, the reflective embedding material for embedding the structural elements is placed on the subcarrier, and the subcarrier is removed, so that the carrier can be provided. Subsequently, arranging radiation-emitting semiconductor chips on the carrier and arranging a conversion material for radiation conversion take place on the carrier provided with the semiconductor chips. This refers to one of the two main sides of the carrier. The now present component network is then separated into separate radiation-emitting components. The finished components may each have a severed portion of the carrier and at least one radiation-emitting semiconductor chip arranged thereon. Single-chip components with only one semiconductor chip or multi-chip components with a plurality of semiconductor chips can be manufactured. The at least one semiconductor chip may be covered with the conversion material.

The carrier produced in the process can be characterized by high radiation stability and high reflectivity. In this way, an efficient operation of the radiation-emitting components is possible. For the main side, on which the radiation-emitting semiconductor chips and the conversion material are arranged, can be formed such that the relevant main page is mainly formed by the reflective embedding material. In this embodiment, the carrier may have a small or minimal metal surface on the chip side. In this way, the carrier can not only be highly reflective, but can also be made possible cost savings.

The use of the metallic structural elements and the carrier having reflective embedding material furthermore offers the possibility of producing the radiation-emitting components with a high packing density. Also in this way a cost saving can be achieved.

Another advantage is a high flexibility of the process. This concerns, for example, the design of the carrier. It is thus possible to adapt the shape and / or the positioning of the metallic structural elements as desired. Also with regard to the expression of the reflective embedding material, a flexible adaptation can be made. The design freedom can only be limited by process systems used in the process.

The metallic structural elements of the carrier can be designed such that efficient heat dissipation during operation of the radiation-emitting components is possible. Furthermore, the structural elements can be produced from metallic materials whose coefficient of thermal expansion is adapted to the coefficients of expansion of the remaining components of the radiation-emitting components. In this way, an occurrence of mechanical stresses in the radiation-emitting components can be avoided, whereby the components can have a high reliability and lifetime.

Another advantage is that the metallic structural elements in the provided carrier can not all be shorted together. In contrast to the use of a ladder-frame-based carrier, it is therefore possible to carry out electrical test measurements, for example for in-line color control, during the manufacturing process. This allows an increase in process reliability and yield. Furthermore, a number of different application technologies can be used for arranging the conversion material. It is even possible to carry out processes in which deviations may occur. Because with the help of the test measurements, such deviations can be promptly recorded and corrected. Also, the isolated radiation-emitting components can be measured in a common manner, which is faster and cheaper than performing individual measurements of components.

In the singulation process performed at the end of the process, the carrier provided with the radiation-emitting semiconductor chips and the conversion material is severed. In this step, only the reflective embedding material of the carrier and the conversion material can be severed. This allows the singulation in a simple, inexpensive and reliable way to perform.

In the following, further possible embodiments and details which may be considered for the method and for the radiation-emitting components produced according to the method are described.

The devices produced by means of the method can have a higher reflectivity of the carrier than conventional devices with ladder-frame-based carriers. In this way, the components can be operated with a higher light output. The luminous efficacy may be at least 2% greater, as determined by experiment.

The metallic structural elements of the carrier can be realized in the form of metal blocks and / or metal strands. As indicated above, the structural elements or at least part of them can serve as electrical conductor structures. In the context of arranging the radiation-emitting semiconductor chips on the carrier, the semiconductor chips can be electrically connected to metallic structural elements of the carrier. In this way, the semiconductor chips can be electrically controlled via the metallic structure elements. Possible embodiments for electrical contacting of the semiconductor chips will be described in more detail below.

As also stated above, at least a part of the metallic structural elements of the carrier can be realized in the form of plated-through holes. As a result, the radiation-emitting components produced by the method are suitable for surface mounting (SMT, Surface Mounting Technology).

During operation of the radiation-emitting components, their semiconductor chips can emit primary light radiation. The primary light radiation may be, for example, a blue or ultraviolet light radiation. With the aid of the conversion material, the primary light radiation can be at least partially converted, that is, at least partially converted into one or more secondary light radiations. In this way, for example, a white light radiation can be generated and released via the conversion material. As a result, the radiation-emitting components can be used, for example, in the field of general lighting. A radiation component emitted in the direction of the carrier of the components can be reflected thereon with high efficiency.

The metallic auxiliary carrier used in the process may be a metal foil. The subcarrier may also be formed, for example, of copper.

The at least one metal deposition process performed to form the metallic features on the submount may be a process in which a metal is deposited over the liquid phase. Such a process can be carried out in a liquid bath into which the auxiliary carrier is introduced. With the help of the at least one masking layer, a part of the subcarrier can be covered. In uncovered regions or openings of the at least one masking layer, metal can be deposited on the auxiliary carrier.

In another embodiment, the at least one metal deposition process is a metal plating process, also called electroplating. Here, the metallic auxiliary carrier serves as a deposition electrode, to which an electrical potential is applied.

It is also possible that the at least one metal deposition process is an electroless plating process. Furthermore, a plurality of electrodeposition processes, a plurality of electroless metal deposition processes, or a combination of at least one galvanic and at least one electroless metal deposition process may be performed.

The at least one masking layer may be a patterned photoresist layer. Such a layer can first be formed coherently and subsequently structured by selective exposure and subsequent development.

In a further embodiment, at least partially metallic structural elements are formed on the auxiliary carrier, in each case at the beginning and at the end of the forming a noble metal and between at least one further metal is deposited. In the carrier produced in this manner, the respective structural elements may have noble metal layers on the main sides of the carrier. In this way, a reliable electrical connection to the semiconductor chips, as well as a reliable electrical contacting of the radiation-emitting components, are made possible. Furthermore, the structural elements can have a high reflectivity. The further metal may be, for example, copper, whereby a cost-effective production of the radiation-emitting components can be further promoted. The precious metal may be silver, for example. Here, between the silver and the copper, another metal such as nickel may be further deposited to form a barrier layer. In another possible embodiment, the precious metal is gold. In this case, at least one further metal, for example palladium (adjacent to the gold) and nickel (adjacent to the copper), may also be deposited between the gold and the copper.

In a further embodiment, at least partially metallic structural elements are formed on the auxiliary carrier, which each have a first and a second section. The first sections of the structural elements have smaller lateral dimensions than the second sections of the structural elements. The first sections of the structural elements are located on one main side and the second sections of the structural elements are located on the other major side of the provided support. Such a structure of Structural elements may be realized using a plurality of masking layers having different sized apertures arranged on each other. The semiconductor chips are arranged on the main side of the carrier on which the first sections of the structural elements with the smaller lateral dimensions are located. In this embodiment, the main side of the carrier provided for arranging the semiconductor chips and the conversion material may have a small metal surface and thus have high reflectivity. In contrast, the opposite main side of the carrier may have a larger metal surface. As a result, efficient heat dissipation during operation of the radiation-emitting components can be achieved. Furthermore, a contacting of the components can be facilitated.

In a further embodiment, metallic structural elements are at least partially formed, which are interconnected via metallic material. This embodiment may be considered in the production of radiation-emitting multi-chip components with a plurality of semiconductor chips. In this way, the plurality of semiconductor chips of the components can be electrically connected to one another. Furthermore, a cooling in the operation of the radiation-emitting components can be favored. It is possible that the structural elements interconnected via metallic material are only accessible on the main side of the carrier on which the semiconductor chips are provided. The connection of structural elements may, for example, be realized in the form of connecting webs which are completely embedded in the reflective embedding material.

In a further embodiment, the reflective embedding material arranged on the auxiliary carrier after the formation of the metallic structure elements has a radiation-transmissive base material and reflective particles embedded therein. The base material may be, for example, a silicone material or an epoxy material. The reflective particles may be, for example, TiO 2 particles.

The reflective embedding material can be applied to the auxiliary carrier such that surfaces remote from the auxiliary carrier remain free of at least part of the metallic structural elements. In this way, the surfaces of these structural elements, together with the embedding material, can form one of the two main sides of the carrier. In the event that undesired covering of the surfaces of structural elements occurs during the application of the reflective embedding material, an additional exposure of these surfaces may be carried out during the placement of the embedding material or thereafter. For example, it is possible to carry out a sandblasting process.

For the application of the reflective embedding material on the subcarrier different processes can be performed. For example, it is possible to carry out a molding process (molding process) using a molding tool. This may be, for example, a film-assisted transfer molding process (FAM, Foil Assisted Molding). In this process, a film made of a plastic material may be arranged on a tool part of the molding or transfer molding tool used. In the transfer molding process, the relevant tool part with the film can be pressed against metallic structural elements. In this way, covering of surfaces of these structural elements facing away from the auxiliary carrier can be avoided.

The application of the reflective embedding material may alternatively be performed in other ways. For example, it is possible to cast the reflective embedding material. Another conceivable process is a droplet-like application of the embedding material by means of a printing device, which is also referred to as jetting.

The removal of the subcarrier carried out after arranging the reflective embedding material can be carried out, for example, by means of an etching process. By removing the subcarrier, the other of the two main sides of the carrier can be formed.

The radiation-emitting semiconductor chips used in the method and arranged on the provided carrier may be LED (Light Emitting Diode) chips. In a further embodiment, the semiconductor chips are volume-emitting semiconductor chips. Such semiconductor chips can emit light radiation not only via a front side but also via other sides such as lateral side flanks. Here, the semiconductor chips may comprise a radiation-transmissive chip substrate of, for example, sapphire, on which a semiconductor layer sequence having an active zone for generating radiation is arranged.

The following configurations may be considered for establishing an electrical connection between the radiation-emitting semiconductor chips and metallic structural elements of the carrier.

In a further embodiment, the radiation-emitting semiconductor chips have rear-side contacts. In this embodiment may be act in the semiconductor chips to so-called flip-chips. Furthermore, the backside contacts of the semiconductor chips are mechanically and electrically connected when disposed on the carrier using an electrically conductive bonding material having metallic structural elements of the carrier. The electrically conductive bonding material may be, for example, a solder or an electrically conductive adhesive.

In an alternative embodiment, the radiation-emitting semiconductor chips have front-side contacts. Furthermore, after arranging the semiconductor chips on the carrier, which can take place for example by gluing or soldering, contact structures are formed, via which the front-side contacts and metallic structural elements of the carrier are electrically connected to one another. Such contact structures may be, for example, bonding wires.

In a further embodiment, metallic structural elements of the carrier are each covered with an additional reflective layer. This procedure can, for example, be considered with regard to the aforementioned embodiment in order to cover those structural elements to which contact structures or bonding wires are connected, subsequently at these locations. In this way, the reflectivity of the carrier can be further improved. The reflective layer can be formed from the reflective embedding material used in providing the support.

As indicated above, the carrier can be formed in view of efficient heat dissipation in the operation of the radiation-emitting components. For this purpose, for example, the following embodiment may also be considered, in which metallic structural elements are partly formed, which are provided in the radiation-emitting components exclusively for cooling. In this embodiment, the semiconductor chips are arranged on the structure elements provided for cooling. This embodiment can be used, for example, when using radiation-emitting semiconductor chips with front-side contacts.

In a further embodiment, the conversion material used in the method comprises a radiation-transmissive base material and embedded therein and the radiation conversion causing phosphor particles. The base material may be, for example, a silicone material.

The conversion material can be arranged in the form of a continuous layer on the carrier provided with the semiconductor chips. In this case, a surface of the layer of the conversion material facing away from the carrier can be flat. Also possible is an embodiment in which the layer of the conversion material has a structure or topology predetermined by the semiconductor chips.

For arranging the conversion material on the substrate provided with the semiconductor chips, different processes can be performed. For example, a molding or molding process carried out with the aid of a molding tool, spraying, lamination, a screen or stencil printing process, spin-coating or dispensing by means of a dispenser are possible.

The separation carried out at the end of the process can be carried out, for example, by means of sawing. Also possible is another process such as punching. Subsequently, further processes such as, for example, testing and sorting of the separated radiation-emitting components can be carried out.

According to a further aspect of the invention, a radiation-emitting component is proposed. The radiation-emitting component has a carrier with two opposite main sides. The carrier has metallic structural elements and a reflective embedding material enclosing the structural elements. The main sides of the carrier are formed by the structural elements and the embedding material. Further components of the radiation-emitting component are at least one radiation-emitting semiconductor chip arranged on the carrier and a conversion material for radiation conversion covering the at least one semiconductor chip.

The radiation-emitting component can be produced according to the method described above or according to one or more of the embodiments of the method described above. Therefore, features, embodiments, and details described above can be similarly applied to the radiation-emitting device.

For example, one or more of the embodiments mentioned below may be present. At least a part of the metallic structural elements can serve as electrical conductor structures of the carrier. The two main sides of the carrier, to which metallic structural elements may be freely accessible, may be planar. The at least one semiconductor chip can be arranged on one of the two main sides of the carrier and can be electrically connected to metallic structure elements. The the at least one semiconductor chip main bearing side of the carrier may have a small or minimal amount of metal. As a result, the carrier can be characterized by a high reflectance, which enables efficient operation of the radiation-emitting device. The metallic structural elements of the carrier can be designed such that efficient heat dissipation during operation of the radiation-emitting component is possible. Further, the metallic structure elements may be made by performing at least one metal deposition process, for example, at least one galvanic or at least one electroless chemical metal deposition process. The radiation-emitting component may be a single-chip component having only one semiconductor chip or a multi-chip component having a plurality of semiconductor chips.

In a further embodiment, at least a part of the metallic structural elements of the carrier extends from one main side to the other main side of the carrier. In this way, the radiation-emitting component can be a surface-mountable component.

In a further embodiment, the aforementioned structural elements implemented in the form of plated-through holes each have a noble metal or a noble metal layer on the main sides of the carrier and at least one further metal therebetween. In this way, a reliable electrical connection to the at least one semiconductor chip, as well as a reliable electrical contacting of the radiation-emitting component, are made possible.

In a further embodiment, at least part of the metallic structural elements of the carrier each have a first and a second section. The first sections of the structural elements have smaller lateral dimensions than the second sections of the structural elements. The first sections of the structural elements are located on one main side and the second sections of the structural elements are located on the other major side of the carrier. The at least one semiconductor chip is arranged on the main side of the carrier on which the first sections of the structural elements having the smaller lateral dimensions are located. In this embodiment, the main side of the carrier carrying the at least one semiconductor chip may have a small or minimal metal surface and thus be highly reflective. In contrast, a larger metal content can be present on the opposite main side of the carrier. As a result, an efficient cooling in the operation of the radiation-emitting device is possible.

In a further embodiment, a plurality of metallic structural elements of the carrier are connected to one another via metallic material. This embodiment can be considered when the radiation-emitting component is a multi-chip component with a plurality of semiconductor chips. Here, the plurality of semiconductor chips may be electrically connected to each other. The interconnected via metallic material structural elements can be located only on the main side of the carrier on which the semiconductor chips are located. The connection of structural elements can be realized in the form of at least one metallic connecting web, which can be completely embedded in the reflective embedding material.

In addition, one or more of the following embodiments may be considered for the radiation-emitting component. The reflective embedding material may comprise a radiation-transmissive base material and reflective particles embedded therein. The conversion material may comprise a radiation-transmissive base material and embedded therein and the radiation conversion causing phosphor particles. In one configuration of the radiation-emitting component with a plurality of semiconductor chips, the conversion material may be present in the form of a continuous layer covering the plurality of semiconductor chips. A surface of the layer of the conversion material facing away from the carrier may be flat. Also conceivable is an embodiment in which the layer of the conversion material has a topology predetermined by the semiconductor chips.

Furthermore, the at least one radiation-emitting semiconductor chip arranged on the carrier can be an LED chip. Also, the at least one semiconductor chip may be a volume-emitting semiconductor chip. Furthermore, the at least one semiconductor chip may have rear-side contacts which are mechanically and electrically connected to metallic structural elements of the carrier via an electrically conductive connection material. Alternatively, the at least one semiconductor chip may have front-side contacts which are electrically connected via contact structures such as, for example, bonding wires to metallic structural elements of the carrier. Those structural elements to which contact structures or bonding wires are connected may additionally be covered with a reflective layer. At least one metallic structural element of the carrier may be provided only for cooling. The at least one semiconductor chip can be arranged on this structural element.

The above-described and / or reproduced in the subclaims advantageous embodiments and refinements of the invention can - except, for example, in cases of definite dependencies or incompatible alternatives - individually or in any combination with each other.

• 1 bis 19 einen Verfahrensablauf zur Herstellung von strahlungsemittierenden Bauelementen anhand von Aufsichtsdarstellungen und seitlichen Schnittdarstellungen, wobei durch Durchführen von Metallabscheidungsprozessen metallische Strukturelemente auf einem metallischen Hilfsträger ausgebildet werden, ein reflektives Einbettungsmaterial auf dem Hilfsträger angeordnet wird und der Hilfsträger entfernt wird, so dass ein Träger bereitgestellt wird, strahlungsemittierende Halbleiterchips unter Verwendung eines elektrisch leitfähigen Verbindungsmaterials auf dem Träger angeordnet und mit Strukturelementen des Trägers elektrisch verbunden werden, ein die Halbleiterchips bedeckendes Konversionsmaterial auf dem Träger angeordnet wird, und eine Vereinzelung in Einzelchip-Bauelemente durchgeführt wird;
• 20 bis 34 einen weiteren Verfahrensablauf zur Herstellung von strahlungsemittierenden Bauelementen, wobei die Bauelemente Multichip-Bauelemente mit mehreren Halbleiterchips sind, und wobei zum Teil metallische Strukturelemente ausgebildet werden, welche über metallisches Material miteinander verbunden sind;
• 35 bis 46 einen weiteren Verfahrensablauf zur Herstellung von strahlungsemittierenden Bauelementen, wobei strahlungsemittierende Halbleiterchips unter Verwendung von Bonddrähten mit metallischen Strukturelementen eines Trägers elektrisch verbunden werden; und
• 47 eine vergrößerte Darstellung eines Trägers mit darauf aufgebrachten reflektiven Schichten, über welche metallische Strukturelemente des Trägers abgedeckt sind.

The above-described characteristics, features and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more clearly understood in connection with the following description of exemplary embodiments, which are explained in more detail in connection with the schematic drawings. Show it:

• 1 to 19 a process sequence for the production of radiation-emitting components on the basis of top views and side sectional views, wherein metal structural elements are formed on a metallic auxiliary carrier by performing metal deposition processes, a reflective embedding material is arranged on the auxiliary carrier and the auxiliary carrier is removed, so that a carrier is provided, radiation-emitting Semiconductor chips are arranged on the carrier using an electrically conductive connection material and are electrically connected to structural elements of the carrier, a conversion material covering the semiconductor chips is arranged on the carrier, and a singulation is carried out in single-chip components;
• 20 to 34 a further process sequence for the production of radiation-emitting components, wherein the components are multi-chip components with a plurality of semiconductor chips, and wherein partially metallic structural elements are formed, which are interconnected via metallic material;
• 35 to 46 a further process sequence for the production of radiation-emitting components, wherein radiation-emitting semiconductor chips are electrically connected using bonding wires with metallic structural elements of a carrier; and
• 47 an enlarged view of a carrier having deposited thereon reflective layers over which metallic structural elements of the carrier are covered.

On the basis of the following schematic figures possible embodiments of radiation-emitting components 100 and related manufacturing processes. In the course of the procedure becomes a carrier 150 generated, which can be characterized by a high radiation stability and high reflectivity. As a result, an efficient mode of operation of the radiation-emitting components 100 possible. Another advantage of the method is a high flexibility in terms of the design of the carrier 150 ,

In the context of production, known processes can be carried out from semiconductor technology and from the production of optoelectronic components, and conventional materials can be used in these areas, so that this is only partially discussed. In the same way, in addition to processes shown and described further processes can be performed and the components 100 In addition to shown and described components and structures with other components and structures are manufactured. It is further noted that the figures are merely schematic in nature and are not to scale. In this sense, components and structures shown in the figures may be exaggerated or oversized for clarity.

The 1 to 19 show on the basis of supervisory representations and lateral sectional views of a possible method for the joint production of radiation-emitting components 100 , These are single-chip components 100 each with a single radiation-emitting semiconductor chip 160 , It should be noted that with the aid of the method a different or larger number of radiation-emitting components 100 can be made together as shown in the figures. In this sense, the figures can be regarded as detail views, and circumstances shown here may be provided repetitive many times. This applies in a corresponding manner to the further procedures explained below.

At the beginning of the process, a metallic submount 110 is provided on which metallic features 130 are formed by performing a plurality of sequential metal deposition processes. This is done using multiple patterned masking layers 120 . 121 with whose help the subcarrier 110 partially covered. The 1 and 2 show the subcarrier 110 after forming a first on a main side of the subcarrier 110 arranged masking layer 120 , The term main page used here includes pages with the largest lateral area. The masking layer 120 has a plurality of recesses or openings 125 on, over which the subcarrier 110 on the relevant main page is exempted. The openings 125 are in pairs in the form of groups of two openings each 125 summarized, wherein the groups are arranged in a grid of rows and columns.

As in the 3 and 4 is shown, then a second masking layer 121 with openings 125 on the first masking layer 120 educated. The openings 125 the further masking layer 121 are located in the area of the openings 125 the first masking layer 120 and go over to this. In the in 4 shown cross-section have the openings 125 the further masking layer 121 larger lateral dimensions than the openings 125 the first masking layer 120 so that the two masking layers 120 . 121 together (upside-down) L-shaped openings 125 form. There are groups of two L-shaped and mutually mirror-symmetrically oriented openings 125 in front.

The metallic subcarrier 110 may be realized in the form of a metal foil of, for example, copper. For the masking layers 120 . 121 they can be photoresist layers which can be patterned by means of photographic technology. Here, each of the layers 120 . 121 initially formed in the form of a coherent layer by applying a photoresist material is applied. The patterning can be carried out by selective exposure and subsequent development.

Subsequently, as in the 5 . 6 and 7 is shown, metallic structural elements 130 on the with the masking layers 120 . 121 provided subcarrier 110 educated. For this purpose, several metal deposition processes are performed. In this way, a metal deposition takes place within the openings 125 the masking layers 120, 121. The structural elements 130 close flush with the masking layer 121 from and have in cross-section one of the L-shaped openings 125 the two masking layers 120, 121 corresponding L-shaped configuration. Here are the structural elements 130 each a first section 135 and a second section 136 on. The first sections 135 the structural elements 130 have smaller lateral dimensions than the second sections 136 the structural elements 130 , as in 6 based on a structural element 130 is indicated. According to the openings 125 Groups consist of two L-shaped and mutually mirror-symmetrically oriented structural elements 130 in front. Each group of structural elements 130 is one of the radiation-emitting components to be produced 100 assigned.

7 shows a detail of an enlarged side sectional view, on the basis of which further details with respect to the structural elements 130 and their production become clear. In the manufacture of the structural elements 130 becomes a precious metal at the beginning and at the end 231 and in between another metal 232 deposited. In this way, the structural elements 130 Surface or finish layers of the precious metal 231 on both main pages 151 . 152 a later present carrier 150 exhibit. This embodiment allows a reliable electrical connection with later used radiation-emitting semiconductor chips 160 and a reliable contacting of the radiation-emitting components produced by means of the method 100 , Furthermore, the structural elements 130 have a high reflectivity.

At the metal 232 For example, it could be copper. In this way, the radiation-emitting components 100 produce economically. The noble metal 231 may be silver, for example. This can be between the silver 231 and the copper 232 further depositing another metal such as nickel to form a barrier layer (not shown). In another possible embodiment comes as a precious metal 232 Gold used. This can be between the gold 231 and the copper 232 each further at least one other metal such as palladium (adjacent to the gold 231) and nickel (adjacent to the copper 232 ) are deposited (not shown).

The for forming the metallic structural elements 130 on the subcarrier 110 Metal deposition processes performed may be processes in which a metal is deposited over the liquid phase, respectively. Such processes can be carried out in liquid baths, in which the with the masking layers 120 . 121 provided subcarrier 110 is introduced. For example, galvanic metal deposition processes are possible. Here, the metallic subcarrier serves 110 as a deposition electrode to which an electrical potential is applied (not shown in each case).

After forming the metallic structural elements 130 takes place as in the 8th and 9 is shown removing the masking layers 120 . 121 from the subcarrier 110 , This can be done, for example, by stripping or by plasma ashing. Furthermore, as in the 10 and 11 Shown is the structural elements 130 enclosing reflective embedding material 140 for embedding the structural elements 130 on the subcarrier 110 arranged. It is provided that the embedding material 140 is flush with the structural elements 130 completes, so by the subcarrier 110 opposite surfaces of the structural elements 130 remain free.

The reflective embedding material 140 may comprise a radiation-transmissive base material and reflective particles embedded therein (not shown). The basic material, which also as Matrix material may be referred to, for example, a silicone material or an epoxy material. The reflective particles may be, for example, TiO 2 particles.

For arranging the reflective embedding material 140 on the subcarrier 110 different, not shown application processes can be performed. One possible method is a molding process carried out with the aid of a molding tool (molding process). Considerable, for example, a film-assisted transfer molding process (FAM, Foil Assisted Molding) come. Here, a film of a plastic material is arranged on a tool part of a transfer molding used for transfer molding. In the transfer molding process, the relevant tool part with the film to the structural elements 130 be pressed. In this way, a seal of the subcarrier 110 remote surfaces of the structural elements 130 achieved and thereby covering these surfaces with the embedding material 140 be avoided. Other possible processes include, for example, potting the embedding material 140 or a droplet-shaped application of the embedding material 140 with the help of a printing device, which is also called jetting.

It may be possible for it to be during the application of the reflective embedding material 140 on the subcarrier 110 to an undesirable covering of the subcarrier 110 remote surfaces of the structural elements 130 with the embedding material 140 comes. This situation is also known as flash or matrix flash. In such a case, in the context of arranging the embedding material 140 on the subcarrier 110 or after that an additional process for exposing the surfaces of the structural elements 130 be performed (not shown). For example, a sandblasting process is conceivable.

Following this, ie after curing of the reflective embedding material 140 and optionally exposing surfaces of features 130, becomes the submount 110 away. For this purpose, for example, an etching process may be performed. In this way, as in the 12 and 13 is shown, a the metallic structural elements 130 and the embedding material 140 comprehensive plate-shaped carrier 150 provided. The carrier 150 has two opposite planar main sides 151 . 152 on, both through the metallic structural elements 130 and the reflective embedding material 140 are formed. The metallic structural elements 130 , which serve as electrical conductor structures of the carrier 150 and thus the radiation-emitting components 100 serve are on the two main pages 151 . 152 of the carrier 150 freely accessible. Furthermore, the structural elements are located 130 in the form of itself from the one main page 151 to the other main page 152 extending vias before. The first sections 135 the structural elements 130 with the smaller lateral dimensions are located on the main page 151 , and the second sections 136 the structural elements 130 with the larger lateral dimensions are located on the other main side 152 , In this embodiment, the main side 151 of the carrier 150 have a relatively small or minimal metal surface.

As in the 12 and 13 further indicated, the carrier may 150 be brought in relation to subsequent process steps in a relation to the preceding figures inverted position. This can be the main page 151 an upward facing, and may be the other main page 152 a downwardly directed backside of the carrier 150.

After removing the subcarrier 110 and thereby providing the flat plate-shaped carrier 150 be like in the 14 and 15 is shown, radiation-emitting semiconductor chips 160 on the carrier 150 arranged and electrically to the metallic structural elements 130 connected. The arrangement of the semiconductor chips 160 takes place on the main or front side 151 of the carrier 150 , at which the first sections 135 the structural elements 130 with the smaller lateral dimensions, and which consequently can have a minimal amount of metal.

In the radiation-emitting semiconductor chips 160 are LED chips (LED chips, light emitting diode), which are realized in the form of volume emitters. In operation, such semiconductor chips 160 a light radiation over an in 15 deliver upwards facing front and over lateral side flanks. The of the semiconductor chips 160 generated light radiation, which is also referred to below as the primary light radiation may be, for example, a blue or ultraviolet light radiation.

The semiconductor chips 160 are further realized in the form of so-called flip-chips, which have not shown back contacts. As in the 14 and 15 is shown, the back side contacts of the semiconductor chips 160 when arranging on the main page 151 of the carrier 150 using an electrically conductive bonding material 170 with the sections 135 the metallic structural elements 130 or with the precious metal layers located here 231 (see. 7 ) mechanically and electrically connected. Every semiconductor chip 160 is assigned to one of the groups of two structural elements 130 connected. The electrically conductive connection material 170 For example, it may be a solder or an electrically conductive adhesive.

In addition to the back-side contacts, the semiconductor chips 160 have further components, not shown, such as a radiation-permeable chip substrate of, for example, sapphire and a semiconductor layer sequence arranged thereon with an active zone for generating radiation. The chip substrate may be the front side and the side edges or a substantial part of the side edges of a semiconductor chip 160 form. The semiconductor layer sequence on which the contacts may be provided may be located on the back side of the chip substrate.

Subsequently, as in the 16 and 17 shown is a conversion material 180 for radiation conversion on the with the radiation-emitting semiconductor chips 160 provided home page 151 of the carrier 150 arranged. The conversion material 180 is in the form of a continuous and the semiconductor chips 160 applied completely covering layer. 17 shows a possible embodiment in which one of the carrier 150 opposite surface of the layer of the conversion material 180 is just. Also possible is an embodiment, not shown, in which the semiconductor chips 160 sheathing layer of the conversion material 180 one from the carrier 150 remote structured surface with a through the semiconductor chips 160 has given topology. The aforementioned characteristics may be dependent on one for applying the conversion material 180 implementation process.

The conversion material 180 may comprise a radiation-transmissive base or matrix material and embedded therein and the radiation conversion causing phosphor particles (not shown). The base material may be, for example, a silicone material.

To arrange the conversion material 180 on the with the semiconductor chips 160 provided carrier 150 different, not shown application processes can be performed. For example, it is possible to carry out a molding process (molding process) using a molding tool. Further, processes such as spraying, lamination, screen or stencil printing process, spin coating or dispensing with dispensing may be used.

Subsequently or after curing of the conversion material 180 is the now present component composite, as in the 18 and 19 is shown in separate radiation-emitting components 100 sporadically. In this process, the reflective embedding material 140 of the carrier is severed 150 and the conversion material 180 along in the 18 and 19 dashed lines indicated dividing lines 190 , The severing can be carried out, for example, by means of sawing. It is also possible to perform another process, such as a stamping process. Subsequently, other processes such as testing and sorting of the radiation-emitting components 100 be performed (each not shown).

The radiation-emitting components 100 can, as in the 18 and 19 is shown to have a cuboid shape. Every component 100 has a severed portion of the carrier 150 with two metallic and serving as electrical conductor structures structural elements 130 and a single one disposed thereon and the conversion material 180 enclosed radiation-emitting semiconductor chip 160 on. Via the metallic structure elements 130, the semiconductor chips 160 of the components 100 be controlled electrically. In this way, the semiconductor chips 160 a primary light radiation, for example, as stated above, a blue or ultraviolet light radiation to give. With the help of the conversion material 180 For example, the primary light radiation may be at least partially converted into one or more secondary light radiations. In this way, for example, generates a white light radiation and the conversion material 180 be radiated. In this embodiment, the radiation-emitting components 100 For example, be used in the field of general lighting. An operation of the components 100 in the direction of the carrier 150 emitted radiation component can on the carrier 150 be reflected (each not shown).

The radiation-emitting components 100 are suitable for surface mounting (SMT, Surface Mounting Technology). This can be done on the main page 152 of the carrier 150 exposed surfaces of the metallic structural elements 130 or precious metal layers located here 231 (see. 7 ) are used as pads, with the help of which the components 100 For example, by soldering with pads of another device, such as a printed circuit board, can be electrically connected (not shown).

The method and the radiation-emitting components produced by the method 100 offer a number of advantages. The carrier 150 of the components 100 can be characterized by high radiation stability and high reflectivity, resulting in efficient operation of the components 100 makes possible. The high reflectivity results from the design of the carrier 150 of the components 100 with a relatively small or minimal amount of metal on the semiconductor chip 160 and the conversion material 180 carrying home page 151 ,

On the other main page 152 of the carrier 150 the radiation-emitting components 100 In contrast, there is a larger metal surface. This provides efficient cooling in the operation of the components 100 over the metallic structural elements 130 possible. Also, the structural elements 130 be contacted reliably.

The production of the metallic structural elements 130 and the reflective embedding material 140 comprehensive carrier 150, on which subsequently semiconductor chips 160 and the conversion material 180 Furthermore, it makes possible the radiation-emitting components 100 to produce with a high packing density. In this way, a cost saving can be achieved.

The method can also be characterized by a high flexibility, for example with regard to the design of the carrier 150 to distinguish. For example, the shape and / or the positioning of the metallic structural elements 130 can be adapted as desired. Furthermore, the structural elements 130 are made of metallic materials whose thermal expansion coefficient to the expansion coefficients of the remaining components of the components to be produced 100 is adjusted. As a result, an occurrence of mechanical stresses in the operation of the radiation-emitting components 100 be suppressed. A flexible adaptation is also in relation to the material characteristics of the reflective embedding material 140 possible. For example, the base material and / or the concentration of the reflective particles can be varied.

The structural elements 130 of the carrier provided in the process 150 are separated from each other and therefore not short-circuited. This makes it possible to carry out electrical test measurements before the singulation process, which makes it possible to increase process reliability and yield. Also, deviations, for example, in relation to the expression of the on the wearer 150 applied conversion material 180 , identified and appropriate corrective actions are carried out. Even after dicing, the radiation-emitting devices 100 can be measured in a common manner. Here, the components can 100 still together on a carrier film used for the separation (not shown).

Such a procedure is faster and less expensive than performing individual measurements.

In the singulation process, only the reflective embedding material becomes 140 of the carrier 150 and the conversion material 180 , and no metallic material, severed. As a result, the singulation step can be carried out in a simple, cost-effective and reliable manner.

In the following, further possible variants and modifications are described, which are for a manufacturing method and radiation-emitting components manufactured therewith 100 can be considered. Matching features, process steps and aspects as well as identical and equivalent components will not be described again in detail below. For details, reference is made to the above description instead. Furthermore, aspects and details that are referred to in one embodiment may also be applied to another embodiment and features of two or more embodiments may be combined.

One possible modification of the method is, for example, rather than single-chip devices 100 as they are in the 18 and 19 are shown to produce multi-chip devices, which several on a support 150 having arranged radiation-emitting semiconductor chips. Such an embodiment can for example be realized by the in the 16 and 17 shown component composite deviating from the 18 and 19 in devices with multiple semiconductor chips 160 is isolated. In the devices manufactured in this way, the semiconductor chips are 160 electrically isolated from each other and can consequently be controlled separately from each other (not shown).

It can also multichip components 100 are manufactured, whose semiconductor chips are electrically connected to each other. For this purpose, a carrier 150 be formed with electrically interconnected structural elements. In order to illustrate such a variant, the following will be described in the following with reference to the elevational views and lateral sectional representations of FIG 20 to 34 Another possible method for the joint production of radiation-emitting components 100 described. These are multichip components 100 each with two electrically interconnected radiation-emitting semiconductor chips 160 ,

The method becomes a metallic submount 110 provided on which metallic structural elements 130 , 131 are formed by performing a plurality of sequential metal deposition processes. There are both separate structural elements 130 as well as metallic material interconnected structural elements 131 generated. This is done using multiple patterned masking layers 120 . 121 . 122 , These can again be realized in the form of photoresist layers. The 20 and 21 show the subcarrier 110 after forming a first masking layer 120 on a main page of the subcarrier 110 and forming another masking layer 121 on the first masking layer 120 , The first masking layer 120 has a den 1 and 2 corresponding embodiment with openings 125 on which pairs in the form of groups of two openings 125 are summarized. The second masking layer 121 includes next to openings 125 leading to the openings 125 the first masking layer 120 have matching lateral dimensions, in addition larger openings 125 with an elongated shape. The elongated openings 125 the further masking layer 121 each extend to openings 125 of two adjacent groups of the first masking layer 120 , and form in cross-section with these together (upside-down) U-shaped openings 125 , On the side of this are the smaller openings 125 the further masking layer 121 congruent in the other openings 125 of the respective groups of the masking layer 120 above.

As in the 22 and 23 are subsequently prepared by performing metal deposition processes using the two masking layers 120 . 121 arranged on the subcarrier 110 metallic structural elements 130 . 131 and metallic connecting webs 133 educated. The structural elements 130 . 131 and connecting bridges 133 close flush with the second masking layer 121 from. Over the connecting bridges 133 located on the first masking layer 120 are each two structural elements 131 connected with each other. The connecting bridges 133 form with the relevant structural elements 131 together in cross-section each one (upside-down) U-shaped structure. Laterally thereof or on two sides of such U-shaped structures are the other structural elements 130 ,

The following will, as in the 24 and 25 a third masking layer is shown 122 formed on the previously produced layers and structures. The masking layer 122 has openings 125 on, over which the structural elements 130 are free and which in the in 25 shown cross section have larger lateral dimensions than the structural elements 130 , The other structural elements 131 and the connecting webs connecting them 133 are on the other hand from the masking layer 122 covered.

Subsequently, as in the 26 . 27 and 28 shown, further metal deposition processes are performed so that in the openings 125 the masking layer 122 further metallic materials are applied and the metallic structural elements present thereafter 130 have an L-shaped configuration in cross-section. The structural elements 130 close flush with the third masking layer 122 and each have a first section 135 and a second section 136 on. The first sections 135 the structural elements 130 have smaller lateral dimensions than the second sections 136 the structural elements 130 ,

28 shows a detail of an enlarged side sectional view, on the basis of which further details with respect to the structural elements 130 . 131 , the connecting bridges 133 and their production become clear. Using the first two masking layers 120 . 121 becomes a precious metal at the beginning 231 and subsequently another metal 232 deposited. Using the third masking layer 122 will also be the metal first 232 and in the end the precious metal 231 deposited. This allows the structural elements 131 Finish layers of the precious metal 231 on a main page 151 , and can the structural elements 130 Finish layers of the precious metal 232 on both main pages 151 , 152 of a later present carrier 150 exhibit. According to the above based on the 1 to 19 explained method, the metal 232 for example, copper, and may be the precious metal 231 for example silver or gold. In addition, between the precious metal 231 and the metal 232 at least one further metal, ie nickel or palladium and nickel as stated above, are deposited (not shown).

After forming the metallic structural elements 130 . 131 and metallic connecting webs 133 removal of the masking layers takes place 120 . 121 . 122 , arranging one of the structural elements 130 . 131 and connecting bridges 133 embedding reflective embedding material 140 on the subcarrier 110 and removing the subcarrier 110 , In this way, as in the 29 and 30 is shown, a flat plate-shaped carrier 150 provided. In terms of placing the embedding material 140 on the subcarrier 110 it is provided that the embedding material 140 is flush with the structural elements 130 completes, so by the subcarrier 110 opposite surfaces of the structural elements 130 remain free. The other structural elements 131 and the connecting webs 133 on the other hand, they are completely filled with the embedding material 140 covered. In the event that the subcarrier 110 remote surfaces of the structural elements 130 in the application of the embedding material 140 with the embedding material 140 should be covered in the context of arranging the embedding material 140 or after an additional exposure of these surfaces are performed (not shown).

As in the 29 and 30 is shown, the carrier 150 has two opposite planar main sides 151 . 152 on which by the metallic structural elements 130 . 131 and the reflective embedding material 140 are formed. The metallic structural elements 130 are in the form of vias, which on the two main sides 151 . 152 of the carrier 150 are freely accessible. The first sections 135 of the structural elements 130 with the smaller lateral dimensions are located on the main page 151 , and the second sections 136 the structural elements 130 with the larger lateral dimensions are on the other main side 152 of the carrier 150 , This can be the main page 151 of the carrier 150 have a relatively small metal content. The over the connecting webs 133 paired structural elements 131 are only on the main page 151 of the carrier 150 freely accessible. The connecting bridges 133 are completely in the embedding material 140 embedded.

Below are, as in the 31 and 32 is shown, radiation-emitting semiconductor chips 160 on the main side 151 of the carrier 150 arranged. The semiconductor chips 160 unillustrated backside contacts formed using an electrically conductive interconnect material 170 with the metallic features 130 . 131 of the carrier 150 be mechanically and electrically connected. Every semiconductor chip 160 is attached to a structural element 130 and to a structural element 131 connected. There are two structural elements each 131 via a connecting bridge 131 are connected to each other in this embodiment, two semiconductor chips 160 electrically connected to each other.

As in the 31 and 32 is further shown, then a conversion material 180 for radiation conversion on the with the semiconductor chips 160 provided home page 151 of the carrier 150 arranged. The conversion material 180 is applied in the form of a continuous layer that completely covers the semiconductor chips 160.

The now present component composite is hereafter, as in the 33 and 34 is shown in separate radiation-emitting components 100 sporadically. For this purpose, the reflective embedding material 140 of the carrier 150 and the conversion material 180 along in the 33 and 34 dashed lines indicated dividing lines 190 severed. The surface mount devices 100 formed thereby each include a severed portion of the carrier 150 with two structural elements 130 and two via a connecting bridge 133 connected structural elements 131 , and two radiation-emitting semiconductor chips arranged thereon and surrounded by the conversion material 180 160 , The two semiconductor chips 160 , which are electrically connected to each other, via the structural elements 130 be controlled electrically.

The basis of the 20 to 34 explained process flow and the radiation-emitting components produced therewith 100 can have the same advantages as explained above. Thus, the main side 151 of the carrier 150 have a relatively small amount of metal and thus be highly reflective, allowing efficient operation of the devices 100 makes possible. As the metallic structural elements 130 . 131 of the carrier provided in the process 150 not all are short-circuited to each other, it is possible to perform electrical test measurements before the separation. Furthermore, by the configuration of the via a connecting web 133 interconnected structural elements 131 a cooling in the operation of the components 100 be favored.

That on the basis of 20 to 34 explained method can be modified such that radiation-emitting components 100 with more than two electrically interconnected radiation-emitting semiconductor chips 160 getting produced. For example, embodiments with a strand comprising a plurality of semiconductor chips arranged in a row next to one another and electrically connected, for example with ten semiconductor chips, are possible. Further examples are configurations with arrangements or arrays of semiconductor chips arranged matrix-like in the form of rows and columns, wherein, for example, arrangements with 2x2, 3x3 or 2x3 semiconductor chips can be realized. Such embodiments may be achieved by providing a carrier adapted thereto 150 be realized, which has metallic material or metallic connecting webs electrically interconnected metallic structural elements. Here, the carrier 150 Comprise arrangements of more than two electrically interconnected structural elements. Also possible are embodiments in which the provided carrier 150 no separate structural elements, but only arrangements of a plurality of electrically interconnected structural elements has (not shown).

In the production of radiation-emitting components 100, semiconductor chips implemented not only in the form of flip-chips can be used 160 with back contacts, but also semiconductor chips 165 to be used with front-side contacts. In order to illustrate such a variant, the following will be described in the following with reference to the overviews of views and side sectional views of FIG 35 to 46 Another possible method for the joint production of radiation-emitting components 100 described. These are single-chip components 100 each with a single radiation-emitting semiconductor chip 165 ,

The method becomes a metallic submount 110 provided on which metallic structural elements 130 , 132 are formed by performing a plurality of consecutive metal deposition processes. Previously, as in the 35 and 36 is shown forming a first masking layer 120 with openings 125 on a main page of the subcarrier 110 and forming another masking layer 121 with openings 125 on the first masking layer 120 , The openings 125 the first masking layer 120 are in the form of groups of three each in a row juxtaposed openings 125 summarized. The openings 125 the further masking layer 121 are in the region of the openings 125 the first masking layer and go into this. In the in 36 shown cross-section have the openings 125 the further masking layer 121 larger lateral dimensions than the openings 125 the first masking layer 120 , Further, the openings 125 the second masking layer 121 arranged such that the two masking layers 120 , 121 together (upside-down) L-shaped openings 125 and in each case between two L-shaped and mutually mirror-symmetrically oriented openings 125 a (upside-down) T-shaped opening 125 exhibit.

Below are, as in the 37 and 38 is shown, metallic structural elements 130 . 132 by performing several metal deposition processes on the one with the masking layers 120 . 121 provided subcarrier 110 educated. The structural elements 130 . 132 close flush with the second masking layer 121 from. According to the shape of the openings 125 the two masking layers 120 . 121 become in cross-section L-shaped structural elements 130 and T-shaped structural elements 132 , which are located between each two L-shaped structural elements 130 are trained. Both the structural elements 130 as well as the structural elements 132 each have a first section 135 and a second section 136 on. The first sections 135 the structural elements 130 . 132 have smaller lateral dimensions than the second sections 136 the structural elements 130 . 132 , In the radiation-emitting components 100 are the structural elements 132 exclusively as thermoblocks for cooling, whereas the other structural elements 130 (also) serve as electrical conductor structures.

As with the above based on the 1 to 19 explained method sequence is in the manufacture of the structural elements 130, 132 respectively at the beginning and at the end of a precious metal 231 such as silver or gold and another metal in between 232 such as copper deposited so that the structural elements 130 . 132 a 7 may have appropriate design. In a later present carrier 150 can the structural elements 130 . 132 In this way, finish layers of the precious metal 231 on both main sides 151, 152. Between the precious metal 231 and the metal 232 For example, at least one further metal, ie nickel or palladium and nickel as indicated above, can be deposited (not shown in each case).

After forming the metallic structural elements 130 . 132 removal of the masking layers takes place 120 . 121 , arranging one of the structural elements 130 . 132 enclosing reflective embedding material 140 on the subcarrier 110 and removing the subcarrier 110 , This will, as in the 39 and 40 is shown, a flat plate-shaped carrier 150 provided. In terms of placing the embedding material 140 on the subcarrier 110 is provided that the embedding material 140 flush with the structural elements 130 . 132 concludes and thereby by the subcarrier 110 facing away surfaces of the structural elements 130, 132 remain free. Unless the surfaces of the structural elements 130 . 132 in the application of the embedding material 140 with the embedding material 140 should be covered, in the context of arranging the embedding material 140 or after an additional exposure of these surfaces can be performed (not shown).

The carrier 150 points, as in the 39 and 40 is shown, two opposite plane and through the metallic structural elements 130 . 132 and the reflective embedding material 140 formed major sides 151 . 152 on. The structural elements 130 . 132 extend from the one main page 151 to the other main page 152 and are freely accessible on the two main sides 151, 152. The first sections 135 the structural elements 130 . 132 with the smaller lateral dimensions are located on the main page 151 , and the second sections 136 the structural elements 130 . 132 with the larger lateral dimensions are on the other main side 152 of the carrier 150 , This can be the main page 151 have a relatively small or minimal amount of metal.

Below are, as in the 41 and 42 is shown, radiation-emitting semiconductor chips 165 on the main side 151 of the carrier 150 arranged. Here, the semiconductor chips 165 on the structure elements provided for cooling 132 placed. This process can be done, for example, by gluing or soldering the semiconductor chips 165 be performed. Further, the semiconductor chips become 165 , as indicated below, to the side of the structural elements 132 located structural elements 130 electrically connected.

The radiation-emitting semiconductor chips 165 are light-emitting diode chips (LED chips) with front contacts, not shown. As in the 41 and 42 is shown, the front-side contacts of the semiconductor chips 165 after arranging the semiconductor chips 165 on the carrier 150 via contact structures in the form of bonding wires 175 with the structural elements 130 of the carrier 150 electrically connected.

Also the radiation-emitting semiconductor chips 165 are volume emitter, which in operation a light radiation over a in 42 can deliver upwardly directed front side and lateral side edges. This primary light radiation may again be blue or ultraviolet light radiation. Furthermore, the semiconductor chips 165 other components, not shown, such as a radiation-transparent chip substrate of, for example, sapphire and a semiconductor layer sequence arranged thereon with an active zone for generating radiation. The chip substrate may be the back side and the side edges or a substantial part of the side edges of a semiconductor chip 165 form. The semiconductor layer sequence on which the contacts may be provided may be located on the front side of the chip substrate.

Subsequently, as in the 43 and 44 shown is a conversion material 180 for radiation conversion on the with the radiation-emitting semiconductor chips 165 provided home page 151 of the carrier 150 arranged. The conversion material 180 is in the form of a continuous and the semiconductor chips 165 and bonding wires 175 applied completely covering layer.

Hereinafter, the present composite component, as in the 45 and 46 is shown in separate radiation-emitting components 100 sporadically. In this process, the reflective embedding material 140 of the carrier is severed 150 and the conversion material 180 along in the 45 and 46 dashed lines indicated dividing lines 190 , The components formed thereby 100 each comprise a severed portion of the carrier 150 with two metallic and serving as electrical conductor structures structural elements 130 and with a heat dissipating metallic structural element 132 , and one arranged thereon and the conversion material 180 enclosed radiation-emitting semiconductor chip 165 , About the structural elements 130 can the semiconductor chips 165 of the components 100 be controlled electrically.

The in the 45 and 46 shown components 100 are also suitable for surface mounting. Here are the ones on the main page 152 of the carrier 150 exposed surfaces of the metallic structural elements 130 . 132 as pads for connecting the components 100 be used to another device (not shown).

The basis of the 35 to 46 explained process flow and the radiation-emitting components produced therewith 100 can have the same advantages as explained above. Thus, the main side 151 of the carrier 150 have a relatively small or minimal metal surface and thereby be highly reflective. The structural elements 130 of the carrier provided in the process 150 are separated from each other and therefore not short-circuited, making it possible to perform electrical test measurements even before singulation.

That on the basis of 35 to 46 explained method can be modified in a corresponding manner such that multi-chip components with a plurality of radiation-emitting semiconductor chips 165 getting produced. This can be achieved, for example, by placing the in the 43 and 44 shown component composite deviating from the 45 and 46 in devices with multiple semiconductor chips 165 is isolated. In the devices manufactured in this way, the semiconductor chips are 165 electrically isolated from each other and therefore can be electrically controlled separately (not shown).

A modification of the method is also possible in that multichip components having a plurality of radiation-emitting semiconductor chips electrically connected to one another are possible 165 be made. Such embodiments can with the help of a coordinated thereon carrier 150 be realized, which has metallic material or connecting webs electrically interconnected metallic structural elements (not shown).

Another variant of the method is fragmentary in the enlarged side sectional view of 47 shown. Here are the serving as conductor structures metallic structural elements 130 of the carrier 150 after forming the bonding wire connections and before applying the conversion material 180 each with an additional reflective layer 145 covered. In this way, the high reflectivity of the carrier 150 be further improved. The layers 145 can be realized from the same material used in providing the carrier 150 for the reflective embedding material 140 is used.

In addition to the embodiments described and illustrated above, further embodiments are conceivable which may include further modifications and / or combinations of features. For example, it is possible to use other materials instead of the above materials.

Further possible modifications consist of forming carriers with configurations and shapes of metallic structural elements that deviate from the figures. This can be realized by means of appropriately designed masking layers.

Furthermore, it is possible to use only one masking layer for the formation of metallic structural elements on a subcarrier and / or to carry out only one metal deposition process.

It is also possible to carry out one or more electroless chemical deposition processes for the formation of metallic structural elements. Also conceivable is a combination of at least one galvanic and at least one electroless chemical metal deposition process.

Furthermore, it is possible to arrange a conversion material for radiation conversion not in the form of a continuous layer, but instead in the form of separate layer sections on a carrier provided with radiation-emitting semiconductor chips. In this case, in each case individual or a plurality of semiconductor chips can be enclosed by such a layer section. In this variant, only the reflective embedding material of the carrier can be severed during the singulation (not shown).

While the invention has been further illustrated and described in detail by way of preferred embodiments, the invention is not limited by the disclosed examples, and other variations can be derived therefrom by those skilled in the art without departing from the scope of the invention.

LIST OF REFERENCE NUMBERS

100

module

110

subcarrier

120

masking layer

121

masking layer

122

masking layer

125

opening

130

structural element

131

structural element

132

structural element

133

connecting web

135

section

136

section

140

embedding material

145

layer

150

carrier

151

Home

152

Home

160

Semiconductor chip

165

Semiconductor chip

170

connecting material

175

bonding wire

180

conversion material

190

parting line

231

precious metals

232

metal

Claims (14)

A method of manufacturing radiation-emitting devices (100), comprising: providing a metallic submount (110); Forming metallic structural elements (130, 131, 132) on the submount (110) by performing at least one metal deposition process using at least one masking layer (120, 121, 122); Arranging a reflective the metallic structural elements (130, 131, 132) enclosing Embedding material (140) on the subcarrier (110) and removing the subcarrier (110), so that a carrier (150) having the two structural main elements (151, 152) has the structural elements (130, 131, 132) and the embedding material (140). wherein the main sides (151, 152) of the carrier (150) are formed by the structural elements (130, 131, 132) and the embedding material (140); Arranging radiation-emitting semiconductor chips (160, 165) on the carrier (150); Arranging a conversion material (180) for radiation conversion on the carrier (150) provided with the semiconductor chips (160, 165); and performing a dicing process to form separate radiation-emitting devices (100). Method according to Claim 1 in that metallic structural elements (130, 132) are formed in which a precious metal (231) and at least one further metal (232) are deposited therebetween at the beginning and at the end of the formation. Method according to one of the preceding claims, wherein metallic structural elements (130, 132) having a first and a second portion (135, 136) are formed, wherein the first portions (135) of the structural elements (130, 132) have smaller lateral dimensions than the second portions (136) of the structural elements (130, 132), wherein the first portions (135) of the structural elements (130, 132) on a main side (151) and the second portions (136) of the structural elements (130, 132) on the another main side (152) of the provided carrier (150), and wherein the semiconductor chips (160, 165) are arranged on the main side (151) of the carrier (150), at which the first sections (135) of the structural elements (130, 132). Method according to one of the preceding claims, wherein metallic structural elements (131) are formed which are connected to one another via metallic material (133). Method according to one of the preceding claims, wherein the radiation-emitting semiconductor chips (160, 165) are volume-emitting semiconductor chips. Method according to one of the preceding claims, wherein the radiation-emitting semiconductor chips (160) have rear-side contacts, and wherein the rear-side contacts of the semiconductor chips (160) are connected to metallic structural elements (130, 131) of the carrier (150) using an electrically conductive connection material (170). be electrically connected. Method according to one of Claims 1 to 5 wherein the radiation-emitting semiconductor chips (165) have front-side contacts, and wherein contact structures (175) are formed, via which the front-side contacts of the semiconductor chips (165) and metallic structure elements (130) of the carrier (150) are electrically connected to one another. Method according to one of the preceding claims, wherein metallic structural elements (130) of the carrier (150) are covered with an additional reflective layer (145). Method according to one of the preceding claims, wherein metallic structural elements (132) are provided, which are provided in the radiation-emitting components (100) for cooling, and wherein the semiconductor chips (165) are arranged on the structural elements (132) provided for cooling. The method of any one of the preceding claims, wherein the at least one metal deposition process performed to form the metallic structure elements (130, 131, 132) is a metal plating process. A radiation-emitting device (100), comprising: a carrier (150) having two opposite major sides (151, 152), the carrier (150) comprising metallic structural elements (130, 131, 132) and a reflective embedding material (140) enclosing the structural elements (130, 131, 132), and wherein the main sides (151, 152) of the carrier (150) are formed by the structural elements (130, 131, 132) and the embedding material (140); at least one radiation-emitting semiconductor chip (160, 165) arranged on the carrier (150); and a conversion material (180) for radiation conversion covering the at least one semiconductor chip (160, 165). Radiation-emitting component according to Claim 11 wherein at least a part of the metallic structural elements (130, 132) extends from one main side (151) to the other main side (152) of the carrier (150) and a noble metal (231) is attached to the main sides (151, 152) of the carrier (150 ) and between at least one further metal (232). Radiation-emitting component according to one of Claims 11 or 12 wherein at least a portion of the metallic structural members (130, 132) have first and second portions (135, 136), the first portions (135) of the structural members (130, 132) being smaller lateral Dimensions than the second sections (136) of the structural elements (130, 132), wherein the first sections (135) of the structural elements (130, 132) on a main side (151) and the second sections (136) of the structural elements (130, 132) 132) on the other main side (152) of the carrier (150), and wherein the at least one semiconductor chip (160, 165) is arranged on the main side (151) of the carrier (150) at which the first sections (135) the structural elements (130, 132) are located. Radiation-emitting component according to one of Claims 11 to 13 , wherein a plurality of metallic structural elements (131) are connected to each other via metallic material (133).

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