DE102016114197A1 - Method for forming a structured layer - Google Patents

Abstract

According to various embodiments, a method of forming a patterned layer (202) on a substrate (102) may include: coating the substrate (102) with a layer (202) to be patterned including a target material (202t) and a sacrificial material (202o) wherein, during the coating, the sacrificial material (202o) is arranged in a plurality of mutually separated regions of the layer (202) and the target material (202t) is arranged between and / or above it so that the sacrificial material (202o) is inserted into the target material (202t ) and / or disposed between the target material (202t) and the substrate (102); wherein disposing the sacrificial material (202o) and / or the target material (202t) comprises disposing solid particles (104) over the substrate (102); Removing the sacrificial material (202o) so that the plural areas of the layer (202) are opened.

Description

The invention relates to a method for forming a structured layer.

In general, a workpiece (e.g., a substrate) may be coated to functionalize it, i. to change its electrical, chemical or mechanical properties. For example, the substrate can provide an electrically conductive, mechanically stable and / or economically favorable framework which is functionalized by means of a coating. For the production of functional components, for example, the mechanical and / or electrical properties of the substrate can be combined with the functional properties of the layer in order to provide high-performance components cost-effectively.

In general, it is thus possible, for example, to increase the energy density of energy stores by increasing their electrode energy content or by increasing the surface area of the electrodes. In the field of energy storage, such as accumulators, solid-state energy storage (also known as the all-solid-state approach) theoretical considerations promise an improvement in energy density, which, however, has so far not been achieved for various reasons. At the same time, the general functioning of the energy store or its fast charging and discharging capacity would become more and more important as the energy density increases.

In general, the usable electrode energy content of solid state energy storage devices can be increased by the highest possible specific surface area of the electrodes. This can be clearly achieved by structuring the functional layer and / or making it from a porous material. For example, the usable electrode energy content of solid-state energy storage devices can be increased by a three-dimensional structuring of high-capacitance and therefore thick electrodes.

Conventionally, the three-dimensional patterning of the electrodes by means of a sequential and dry layer structure by additive and subtractive methods and the improvement of the solid ion conductors used, which are adapted to the processes carried out. However, porous layers, i. Layers with an already high specific surface area can only be structured with great effort. For example, liquid etchants penetrate the pores of a layer and thus act in an uncontrolled manner, including those areas which are to remain. Therefore, the full potential of patterning a porous layer can rarely be exploited.

Also in other areas, such as touch-sensitive screens, structured layers are needed.

For structuring, conventional processes are often used, e.g. Plasma etching, wet chemical etching, ion implantation, laser structuring, electron beam patterning, photolithography, printing, nanolithography. In some cases, these processes are unsuitable for structuring the desired material. Other processes have several sequential steps, slowing down their use and thus reducing their efficiency. For example, sequential ablation steps are used to leave ridges or structures by pulse laser techniques. These subtraction steps enable a large amount of material to be removed precisely with relatively little energy input. For this, however, a high cost often has to be taken into account, which reduces their profitability.

In general, for the production of energy storage there is a great need for economically feasible processes in order to be able to produce and offer the energy stores in a clearly more favorable manner and / or to better couple the active material to the current collector, which improves the efficiency.

According to various embodiments, a method for forming a structured layer is provided, which reduces the expense, increases the cost and / or can be done in a continuous system, so that the production costs can be reduced and the production speed can be increased. The method makes it possible to minimize the chemical stress which acts on the layer to be structured, so that its functionality is impaired as little as possible. Thus, a wide variety of different classes of materials can be structured, e.g. chemically and / or mechanically sensitive materials, e.g. organic materials.

According to various embodiments, the method enables to structure materials which have a high specific surface area and are therefore unsuitable for most conventional patterning processes, such as porous materials. The process makes it possible to further increase the specific surface area by means of structuring, without impairing or uncontrollably removing the porous materials. Thus, a wide variety of different material classes can be structured, eg chemically and / or or mechanically sensitive materials, such as an active material or an electrolyte.

According to various embodiments, a method of forming a structured active material layer is provided. The active material layer can be used, for example, in energy stores, so that their production can be cheaper and less time consuming.

According to various embodiments, a method of forming a patterned sensor layer is provided. The sensor layer can be used, for example, in a sensor, e.g. be used a capacitive surface sensor, so that its production can be cheaper and cheaper and takes less time.

According to various embodiments, a method for forming a patterned layer on a substrate may include: coating the substrate with a layer to be patterned comprising a target material and a sacrificial material, wherein upon coating the sacrificial material over and / or simultaneously with the target material the substrate is arranged; wherein arranging the sacrificial material and / or the target material comprises disposing solid particles over the substrate (e.g., in multiple regions of the layer to be patterned); and removing the sacrificial material so that multiple areas of the layer are opened (also referred to as subtraction lithography).

According to various embodiments, the sacrificial material may be disposed in the plurality of regions of the layer to be patterned, e.g. in the form of solid particles.

According to various embodiments, a method of forming a patterned layer may include: coating the substrate with a layer to be patterned comprising a target material and a sacrificial material, wherein, in the coating, the sacrificial material is disposed in front of and / or concurrently with the target material over the substrate becomes; wherein the sacrificial material changes to a gaseous state of aggregation at a lower temperature and / or pressure than the target material (i.e., the sacrificial material has a lower temperature and / or pressure than the target material at which it changes to a gaseous state); thermally transferring the sacrificial material to the gaseous state of aggregation such that a plurality of regions (e.g., the plurality of regions) of the layer are opened.

According to various embodiments, the thermal transfer of the sacrificial material to the gaseous aggregate state may be by means of (e.g., pulsed) irradiation of the sacrificial material and the target material.

According to various embodiments, the sacrificial material may form or at least be part of a mask (also referred to as a sacrificial mask) over the substrate, the mask having a continuous opening through which the target material passes or at least penetrates.

According to various embodiments, a method of forming a patterned layer within a vacuum chamber may include: arranging and / or transporting a substrate in the vacuum chamber; Generating a stream of solid particles from a source region toward the substrate; and disposing a mask between the substrate and the source region, the mask having one or more (e.g., disjoint) openings.

According to various embodiments, the substrate may be coated through the mask. Optionally, the mask may be or may be used to coat an additional substrate (also referred to in this case as an exchange mask or reusable mask). Alternatively, the mask for patterning the coating (which may include or be formed from the layer to be patterned) may be removed (also referred to as sacrificial mask in the case). The replacement mask may be located at a distance from the substrate. The sacrificial mask may be part of the coating.

According to various embodiments, a method of forming a patterned layer within a vacuum chamber in which a solid particle emission device is disposed may include: disposing a substrate in the vacuum chamber; Disposing a mask between the substrate and the solid particle emission device, the mask having one or more openings; and emitting solid particles by the solid particle emission device toward the substrate.

According to various embodiments, the method may further comprise generating and / or maintaining an electric field between the substrate and the mask (exchange mask) and / or between the solid particle emission device and the mask for guiding the solid particles. For example, the electric field may enable electrophoresis, for example a drift of the electrons in a certain direction. For example, the solid particles can be conducted by means of the electric field (eg through the several openings).

Wherein the solid particles emitted by the solid particle emitting device toward the substrate include or are formed of a target material.

According to various embodiments, the method may further comprise: coating the substrate with the solid particles through the mask.

According to various embodiments, the mask may comprise a plurality of solid particles which may or may be disposed over the substrate.

According to various embodiments, the solid particles of the mask may include or be formed from a sacrificial material (also referred to as a sacrificial mask).

According to various embodiments, the target material may have a larger particle density than the sacrificial material and / or as the substrate.

According to various embodiments, the sacrificial material may have a larger particle density than the target material and / or as the substrate.

According to various embodiments, the sacrificial material can be removed by at least partially converting it to a gaseous state, e.g. by at least partially vaporizing and / or sublimating it.

According to various embodiments, during coating, the sacrificial material can be arranged in a plurality of mutually separated regions of the layer and the target material can be arranged between and / or above it (ie, at least partially covering it) so that, for example, the sacrificial material is embedded in the target material and / or is disposed between the target material and the substrate.

According to various embodiments, the transfer may be by means of (e.g., pulsed) irradiation.

According to various embodiments, the (e.g., pulsed) irradiation may occur on both sides of the substrate.

According to various embodiments, the (e.g., pulsed) irradiation may be done in a vacuum.

According to various embodiments, a porosity of the target material may be greater than a porosity of the substrate.

According to various embodiments, the solid particles may be placed in a vacuum over the substrate.

According to various embodiments, the solid particles that are placed over the substrate may be from a particle stream (e.g., in a vacuum).

According to various embodiments, the solid particles may be disposed over the substrate by means of a solid particle emission and / or in a vacuum.

According to various embodiments, the solid particle emission may be by means of electrophoresis.

According to various embodiments, the solid particle emission may occur in a vacuum.

According to various embodiments, the sacrificial material and / or the target material may be disposed over the substrate by a printing process (i.e., by printing).

According to various embodiments, the solid particles comprising or formed from the sacrificial material may be larger than the solid particles comprising or formed from the target material.

According to various embodiments, a temperature at which the sacrificial material changes to a gaseous state of aggregation may be less than a temperature at which the target material changes to a gaseous state.

According to various embodiments, the sacrificial material may be disposed between the target material and the substrate.

According to various embodiments, the sacrificial material may or may be at least partially (i.e., partially or completely) covered with the target material.

According to various embodiments, the target material may include or be formed from a metal.

According to various embodiments, the target material may comprise at least one of the following metals: aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), nickel (Ni), zirconium (Zr), niobium (Nb), molybdenum ( Mo), tantalum (Ta), gold (Au), silver (Ag), platinum (Pt), tungsten (W).

According to various embodiments, the multiple regions of the layer that are opened may expose the substrate.

According to various embodiments, the target material may comprise or be formed from a metal, a semi-metal, a ceramic or an active material.

According to various embodiments, the substrate may be opaque or at least comprise or be formed from an opaque material. In other words, the substrate may be intransparent or at least have or be formed from an intransparent material.

Alternatively, the substrate may be transparent or at least have or be formed from a transparent material. For example, a transparent substrate may be used to form a device that emits light through the substrate.

According to various embodiments, the substrate may include or be formed from an electrode of an energy storage device.

According to various embodiments, the energy storage may be reversible (i.e., rechargeable).

According to various embodiments, the energy storage device may include or be formed from a capacitor (i.e., an energy storage device for storing electrical charge via an electric field) or an accumulator (i.e., an energy storage device for storing electrical charge via electrochemical conversion).

According to various embodiments, the substrate may include or be formed from a solar cell.

According to various embodiments, the substrate may include or be formed from a printed circuit board.

According to various embodiments, the method may further include: forming a capacitive area sensor using the target material.

According to various embodiments, the method may further comprise: electrically contacting the patterned layer (e.g., its target material).

According to various embodiments, the method may further comprise: forming a metallization which electrically contacts the target material (over the substrate), e.g. a metallization having a contact pad.

According to various embodiments, the target material and / or the sacrificial material may or may not be formed from a liquid phase.

According to various embodiments, the target material and / or the sacrificial material may or may not be formed from a dispersion.

According to various embodiments, the liquid phase forming may comprise solidifying it, e.g. by releasing a solvent therefrom (also referred to as dry) and / or converting it to a solid state (e.g., solidifying it).

According to various embodiments, a method of forming a patterned layer may include: disposing a sacrificial layer over a substrate having a plurality of (singulated) segments; Depositing a layer to be patterned over the substrate such that its material is disposed at least between the plurality of segments; Removing the plurality of segments to form openings in the layer to be patterned; wherein the sacrificial layer and / or the layer to be structured are formed by means of a solid particle emission.

According to various embodiments, the substrate may include or be formed from a polymer, e.g. a transparent polymer.

According to various embodiments, the sacrificial material may include or be formed from a polymer (e.g., an opaque polymer), e.g. different from that of the substrate.

According to various embodiments, the substrate may comprise at least one sheet-like support and / or a flexible support, e.g. a foil or plate (e.g., a wafer).

According to various embodiments, the substrate may be coated on both sides or be formed, for example, from one side (by turning the substrate) or from two opposite sides.

According to various embodiments, the substrate may include or be formed from a laminate.

According to various embodiments, the substrate may include mica (eg, layered silicate comprising or formed therefrom), a ceramic (eg, a transparent ceramic such as glass), a semiconductor material (eg, silicon), and / or a metal (eg, aluminum, copper, and / or lithium ) or be formed therefrom.

According to various embodiments, the target material and / or the substrate may comprise or be formed from an electrically conductive material, e.g. a metal and / or a metallic alloy. For example, the substrate may include or be formed from an electrically conductive coating (e.g., a current collector layer).

Alternatively or additionally, the metal of the target material and / or the substrate may be in or coated with a ceramic (e.g., a nitride or carbide). For example, the target material and / or the substrate may include or be formed from a metal nitride (such as TiN, CrN) and / or a metal carbide (such as TiC, CrC). More generally, in addition to the metal, a nonmetal may or may not be incorporated into the target material and / or the substrate. For example, the target material may or may be chemically reacted, e.g. with a process atmosphere comprising carbon and / or nitrogen.

As the ceramic, according to various embodiments, an inorganic non-metallic material can be understood which can be used besides oxides (e.g., metal oxides) also for nitrides and / or carbides. In other words, an oxide, a carbide and / or a nitride may be a ceramic.

According to various embodiments, the target material and / or the substrate may be electrically conductive, ie have a specific electrical conductivity of greater than about 10 ⁶ S / m (Siemens per meter), eg greater than about 2 · 10 ⁶ S / m, eg greater than about 5 x 10 ⁶ S / m, for example greater than about 10 ⁷ S / m, for example greater than about 2 x 10 ⁷ S / m, for example greater than about 5 x 10 ⁷ S / m, for example, in a range of about 10 ⁷ S / m to about 10 · 10 ⁷ S / m.

The target material and the substrate may differ from each other, e.g. in at least one of the following properties: their density, their porosity (if any), their mechanical hardness, their mean particle density (if any), their mean density, their electrical conductivity; their gas permeability; their permittivity, their chemical composition or their chemical reactivity.

The target material and the sacrificial material may differ from each other, e.g. in at least one of the following properties: their density, their porosity (if present), their mechanical hardness, their layer thickness, their mean particle density (if any), their mean particle size (if any), their mean density, their electrical conductivity; their gas permeability; their permittivity, their chemical composition or their chemical reactivity.

According to various embodiments, the electrical conductivity of the target material may be less than the electrical conductivity of the substrate and / or both may have greater electrical conductivity than the sacrificial material. For example, the target material may be electrically insulating (ie, have an electrical conductivity of less than about 10 ^-6 S / m), eg, when the target material comprises a ceramic or a polymer.

Alternatively, the electrical conductivity of the target material may be greater than the electrical conductivity of the substrate and / or both may have greater electrical conductivity than the sacrificial material. For example, the substrate may be electrically insulating (ie, have an electrical conductivity of less than about 10 ^-6 S / m), eg, when the substrate comprises a ceramic or a polymer.

As used herein, a metal (also referred to as a metallic material) may comprise (or be formed of) at least one metallic element (i.e., one or more metallic elements), e.g. at least one element from the following group of elements: copper (Cu), iron (Fe), titanium (Ti), nickel (Ni), chromium (Cr), platinum (Pt), gold (Au), zinc (Zn), Magnesium (Mg), Aluminum (Al), Zirconium (Zr), Niobium (Nb), Tantalum (Ta), Molybdenum (Mo), Tungsten (W), Vanadium (V), Barium (Ba), Indium (In), Calcium (Ca), hafnium (Hf), samarium (Sm), silver (Ag), and / or lithium (Li). Optionally, a metal may include or be formed from a metallic compound (e.g., an intermetallic compound or an alloy), e.g. a compound of at least two metallic elements (e.g., the group of elements), e.g. a connection like bronze or brass. Alternatively or additionally, a metal may comprise a compound of at least one metallic element (e.g., of the group of elements) and at least one non-metallic element (e.g., carbon), e.g. a connection like steel.

According to various embodiments, a metal may have a thermal conductivity greater than 10 W / (m · K) (watts per Kelvin and meters), eg greater than 50 W / (m · K).

According to various embodiments, the polymer may comprise or be formed from a thermoset, a thermoplastic, and / or an elastomer.

According to various embodiments, the polymer may comprise or be formed from an organic polymer, e.g. a hydrocarbon. An organic polymer may denote a polymer which has carbon atoms in the main chain of the polymer or whose main chain is formed of a plurality of carbon atoms.

According to various embodiments, the polymer may include polyvinylchloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES), polytetrafluoroethylene (PTFE), cyclo-olefin copolymer (COC), cyclo- Olefin polymer (COC, trade name: ZEONOR), electrically conductive polymer and / or polyethylene naphthalate (PEN) or be formed therefrom.

According to various embodiments, the method may further comprise: forming an energy storage using the patterned layer, the target material, and / or the substrate.

According to various embodiments, the substrate may be arranged and / or transported in a vacuum chamber for coating with the target material and / or with the sacrificial material. For example, a pressure (process pressure) in which coating (forming the first layer and / or forming the second layer) is in a range of about 1 × 10 ^-5 millibar (mbar) to about 8 × 10 ^-4 Be set and / or regulated. For example, the process pressure can be set and / or regulated by means of a regulated and / or regulated gas inlet (eg with constant pumping power), eg by introducing a process gas.

According to various embodiments, the sacrificial material may be placed over the substrate prior to (e.g., spaced apart from) the target material. Then, the sacrificial material may optionally be covered with the target material. Alternatively or additionally, the sacrificial material may be simultaneously disposed over the substrate to the target material. Then, the sacrificial material may optionally be disposed adjacent to the target material and / or partially exposed.

According to various embodiments, during coating, the target material may remain uncovered by the sacrificial material. Alternatively or additionally, the target material may be exposed (e.g., from the sacrificial material).

According to various embodiments, the substrate may have a smaller transparency than the target material and / or as the sacrificial material. Alternatively or additionally, the target material may have a smaller transparency than the sacrificial material.

The transparency may be understood as a measure describing which portion of the incident light penetrates an area and / or a body (e.g., a layer and / or a substrate). The transparency may be influenced by the material of which the region and / or the body is formed, and / or by the way the light has to travel through the region and / or the body. The greater the thickness (e.g., thickness) of the region and / or body, the less light that can penetrate along the thickness. The light can be understood as the visible light, e.g. having a wavelength in a range of about 380 nm to about 780 nm. The transparency may be applied to the entirety of the incident light, e.g. averaged over the wavelengths of light. Alternatively or additionally, the transparency may refer to a particular wavelength in the range of about 380 nm to about 780 nm, e.g. to light having a wavelength of about 650 nm (red), a wavelength of about 520 nm (green), and / or a wavelength of about 470 nm (blue). The transparency can be understood as the reciprocal of the opacity. Transparent with respect to a body (e.g., a layer and / or a substrate) or region may be understood to transmit more than 75% of the light (e.g., visible light), e.g. more than about 90%, e.g. more than about 95%, e.g. more than about 99%.

According to various embodiments, the sacrificial material may have a greater absorption coefficient than the substrate and / or as the target material, e.g. towards the irradiation. The absorption coefficient may describe the proportion of radiation used for irradiation which is absorbed (and / or converted into thermal energy).

According to various embodiments, the layer or at least the target material to be patterned may have a thickness (layer thickness) in a range of about 100 nm to about 1 μm, eg in a range of about 200 nm to about 500 nm. For example, the layer to be patterned or at least that Target material copper include or be formed from, for example, having a thickness in a range of about 800 nm to about 1 micron. This makes it possible, for example, to form a sensor layer comprising the target material.

According to various embodiments, placement of the target material may be by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), plasma spraying, or liquid phase deposition. The liquid phase deposition may be done, for example, when the sacrificial material is or will be provided in the form of solid particles.

According to various embodiments, placement of the sacrificial material may be by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), or liquid phase deposition. Arranging the sacrificial material by plasma spraying may be more difficult due to the associated high temperatures than arranging the target material by means of plasma spraying. For example, placing the sacrificial material may be free of plasma spraying. The liquid phase deposition may be done, for example, when the target material is or will be provided in the form of solid particles.

According to various embodiments, the solid particles comprising the target material may be placed over the substrate after the solid particles comprising the sacrificial material, e.g. at a time interval from each other and / or by means of different processes.

According to various embodiments, a coating arrangement for coating a substrate may comprise: a container having a region (also referred to as source region) for receiving solid particles; a positioning device for positioning a substrate with a substrate surface of the substrate toward the region; at least one electron source for introducing electrons into the solid particles; a controller configured to control an electrostatic charge of the solid particles such that a force caused by the electrostatic charge separates the solid particles and accelerates toward the substrate surface of the substrate to coat the substrate surface with at least a portion of the separated solid particles; and a mask, which is arranged between the positioning device and the container and / or movably mounted.

According to various embodiments, a coating arrangement for coating a substrate may include: a vacuum chamber in which a coating area and a patterning area are arranged; a solid particle emission device for emitting solid particles in the coating region; a positioning device for transporting a substrate between the coating area and the patterning area; a thermal structuring device for removing a sacrificial material from the substrate (e.g., by thermally transferring the sacrificial material to a gaseous state of aggregation) in the patterning region.

The thermal structuring device may comprise an irradiation device for emitting radiation into the structuring region.

According to various embodiments, the target material may have greater chemical activity than the substrate and / or as the sacrificial material.

As a chemical activity, the ability (vividly the endeavor) of a material can be understood to react with other materials. The chemical activity can represent the rate at which the chemical reaction occurs. The greater the chemical activity of a material, the faster the material can chemically react and / or be consumed by the chemical reaction. The chemical activity may refer to a reference reactant, e.g. to oxygen and / or an ionic conductor (e.g., an electrolyte).

According to various embodiments, the target material may have a greater electrical conductivity than the substrate and / or as the sacrificial material. This makes it possible, for example, to form electrically conductive webs or printed conductors.

According to various embodiments, the patterning of the layer may be done by subtraction lithography, e.g. by means of irradiation.

The irradiation may have a whole-area irradiation, e.g. the sacrificial material and the target material. For example, the sacrificial material may be irradiated at approximately the same energy density or become as the target material. Alternatively or additionally, approximately the same energy density may be introduced into the sacrificial material or may be as in the target material.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1A and 1B each a solid particulate emission in a method according to various embodiments;

2A . 2 B and 2C each a method of patterning a layer according to various embodiments;

3A . 3B and 3C each a method of patterning a layer according to various embodiments;

4A . 4B and 4C each a method of patterning a layer according to various embodiments;

5A . 5B and 5C each a method of patterning a layer according to various embodiments;

6A and 6B each a method of patterning a layer according to various embodiments;

7A and 7B each a method of patterning a layer according to various embodiments;

8A and 8B each a method of patterning a layer according to various embodiments;

9A and 9B each a method of patterning a layer according to various embodiments;

10A and 10B each a method of patterning a layer according to various embodiments;

11A and 11B each a method of patterning a layer according to various embodiments;

12A . 12B . 12C and 12D each a method of patterning a layer according to various embodiments;

13A and 13B each a coating arrangement according to various embodiments;

14A and 14B each an energy store according to various embodiments;

15A and 15B each a method of patterning a layer according to various embodiments;

16A and 16B each a method of patterning a layer according to various embodiments;

17A and 17B each a method of patterning a layer according to various embodiments;

18A and 18B each a method of patterning a layer according to various embodiments;

19 a mask for patterning a layer according to various embodiments;

20A and 20B each a method of patterning a layer according to various embodiments;

21A . 21B and 21C each a method of patterning a layer according to various embodiments; and

22A . 22B and 22C each a method of patterning a layer according to various embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

In this description, the terms "connected,""connected," and "coupled" are used to describe both direct as well as an indirect connection (eg ohmic and / or electrically conductive, eg an electrically conductive connection), a direct or indirect connection as well as a direct or indirect coupling.

The term "over" with respect to deposited material or a layer thereof formed "over" a side or surface may be understood in accordance with various embodiments in that the deposited material or layer is "directly on," e.g. in direct (e.g., physical) contact with said side or surface. The term "over" with respect to a deposited material or layer formed "over" a side or surface may be understood in accordance with various embodiments as the deposited material or layer being "indirectly on" said side or surface is formed, wherein one or more additional layers are or are disposed between said side or surface and the deposited material.

The term "lateral" or "lateral" with respect to the "lateral" or "lateral" extent of a structure (or a substrate, a wafer or a carrier) or "laterally" adjacent, according to various embodiments may be used to denote an expansion or positional relationship along a surface of a substrate, wafer, or carrier. That is, a surface of a substrate (eg, a surface of a support or a surface of a wafer) may serve as a reference, commonly referred to as the main processing surface of the substrate (or the main processing surface of the carrier or wafer). Further, the term "width" used with respect to a "width" of a structure (or a structural element) may be used herein to denote the lateral (or lateral) extent of a structure.

Further, the term "height" used in relation to a height of a structure (or a structural element) may be used herein to extend a structure along a direction perpendicular to the surface of a substrate (eg, perpendicular to the main processing area of a substrate). to designate, ie a vertical extension. The term "thickness" used with respect to a "thickness" of a layer can be used herein to refer to the spatial extent of the layer perpendicular to the surface of the support (material) on which the layer is deposited ie a vertical extension. When the surface of the carrier is parallel to the surface of the substrate (for example, to the main processing surface), the thickness of the layer applied to the carrier may be equal to the height of the layer. Further, a "vertical" structure may denote a structure that extends in a direction perpendicular to the lateral direction (eg, perpendicular to the main processing surface of a substrate), and a "vertical" extent may extend along a direction perpendicular to a lateral direction (FIG. for example, an extension perpendicular to the main processing surface of a substrate).

In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

According to various embodiments, a method for producing a layer having a high specific surface area is provided. The method provided according to various embodiments increases the economics of the production of a device made therewith.

According to various embodiments, a method of patterning a thin porous layer is provided. The layer may have a thickness (vertical extension) in a range from about 1 nm (nanometers) to about 10 μm (microns), e.g. in a range of about 10 nm to about 1 μm.

According to various embodiments, it has been recognized that for the manufacture of an energy storage, for example a lithium-ion battery, for example a solid energy storage, there is a great need for economically feasible processes to the active materials on the current conductor (eg comprising an aluminum foil or copper foil, eg with a thickness in a range of about 4 microns to about 20 microns) so that they better connect to the current collector, so as to achieve a performance gain.

According to various embodiments, a method is provided which makes it possible to increase surfaces or interfaces for the lithium intercalation and / or to shorten the path that the electrons take through the structured layer. According to various embodiments, the method can be used to pattern anode and cathode materials, respectively.

1A and 1B each illustrate a solid particle emission in a method according to various embodiments in a schematic side view or cross-sectional view 100a and a schematic plan view 100b ,

The solid particle emission (also referred to as Fast Particle Deposition, "FPD" for short) may comprise: positioning a substrate to be coated 102 in a vacuum and in direction (opposite direction 105 ) of an area 104q (also as a source area 104q or solid particle source area 104q in the solid particle 104 are arranged, with which the substrate 102 should be coated.

The solid particle emission may further include: introducing electrons into the solid particles 104 for electrostatic charging of the solid particles 104 such that a force caused by the electrostatic charge force the solid particles 104 separates and towards each other 105 of the substrate 102 accelerates to coat the substrate 102 with at least a portion of the separated solid particles 104 , The direction 105 of the substrate 102 accelerated solid particles 104 can be a particle flow 1802 form.

The solid particles 104 may be referred to as a loose bed (also referred to as an agglomerate) in the source area 104q be arranged or become.

For example, the solid particles 104 in a particle container 106 be arranged or be, which has an at least partially electrically conductive wall. Optionally, the introduction of the electrons in the solid particles 104 done indirectly via the container wall. In other words, the introduction of electrons into the solid particles 104 take place from the container wall. This can be achieved, for example, that the electrons are distributed by means of the container wall (shown as arrows) which is an electrical current density, which by the introduction of electrons in the solid particles 104 is effected, reduced. Thus, clearly a local heating of the solid particles 104 can be reduced and / or prevented, for example, a local melting or sintering effected thereby.

In the context of this description, the solid particles 104 be understood as particles (graphically grains) which have a solid or are formed from it, ie in a solid state matter present matter (the matter may have multiple atoms and / or molecules). The solid particles 104 may have an average size (illustratively particle size) greater than 5 nm, for example, greater than 0.1 .mu.m, for example less than 1 mm, for example less than 500 .mu.m, for example in a range from about 10 nm to about 500 .mu.m, for example in one Range from about 100 nm to about 100 μm, eg in a range from about 200 nm to about 10 μm, or in a range from about 0.1 μm to about 1 mm, for example in a range from about 1 μm to about 500 μm , eg in a range from about 10 μm to about 250 μm. The solid particles 104 can clearly form a granulate or a powder, which at least in the source areas 104q be arranged or can be. The expansion of the solid particles 104 may be their average extent, eg over all solid particles 104 averaged and / or for each solid particle 104 individually averaged. The average extension of a single solid particle 104 can clearly correspond to a diameter of a sphere, which is the volume of the solid particle 104 having.

Optionally, the solid particle emission may include: removing electrons from the solid particles 104 during the introduction of electrons into the solid particles 104 wherein the discharge is controlled or regulated, for example by means of a controller 108 , This can be an electrical potential of the solid particles 104 , which is caused by the introduction of electrons, controlled or regulated. Illustratively, a part of the electric charge, which by the introduction of electrons in the solid particles 104 is introduced by means of the discharge of electrons are discharged again.

According to various embodiments, a controller 108 have a forward-looking control path and thus vividly implement a flow control, which converts an input variable into an output variable. The control path can also be part of a control loop, so that a control is implemented. The control has, in contrast to the pure forward control on a continuous influence of the output variable on the input variable, which is effected by the control loop (feedback). According to various embodiments, a control may be used instead of the control.

According to various embodiments, the introduction can be controlled or regulated, for example by means of the controller 108 , This can be an electrical potential of the solid particles 104 , which is caused by the introduction of electrons, controlled or regulated.

Optionally, the solid particle emission may further include: vaporizing a coating material (also referred to as a co-coating) toward the substrate 102 for coating the substrate 102 with at least a portion of the coating material. If a co-coating is used, the solid particles can 104 having or being formed from the sacrificial material, and the coating material may include or be formed from the target material.

For example, the coating of the substrate 102 with at least the part of the coating material and the coating of the substrate 102 with at least the part of the separated solid particles 104 overlap one another temporally and / or spatially. Alternatively or additionally, the coating of the substrate 102 with at least the portion of the coating material after coating the substrate 102 with at least the part of the separated solid particles 104 respectively.

Alternatively, the solid particles 104 have or be formed from the target material, for example an accumulator-active material, a solar cell active material, a catalyst material and / or a solid electrolyte. Then the substrate may already be coated with the sacrificial material. For example, the coating of the substrate 102 with the sacrificial material by means of a preceding solid particle emission, as described in more detail below. Alternatively or additionally, the coating of the substrate 102 with the sacrificial material by means of a preceding liquid phase deposition (ie, from a liquid phase and before the solid particle emission), as will be described in more detail below.

Optionally, the solid particle emission may further comprise: controlling and / or regulating (eg by means of a controller 108 or regulation) of an electrical potential difference between the substrate 102 and the solid particles 104 , Be the solid particles 104 in a container 106 arranged, the electric potential of the solid particles 104 the electrical potential of the container 106 correspond. For example, an electrical potential of the substrate 102 and / or an electric potential of the solid particles 104 controlled and / or regulated. For example, one may be attached to the substrate 102 applied electrical voltage (ie, an electrical potential difference to an electrical reference potential) are controlled or regulated. Alternatively or additionally, one may be attached to the solid particles 104 applied electrical voltage (ie, an electrical potential difference to an electrical reference potential) are controlled or regulated. The electrical reference potential may be provided by, for example, a vacuum chamber. Alternatively, the electrical potential difference between substrate 102 and solid particles 104 also be controlled or controlled floating (ie independent of the electrical reference potential).

Is a mask (see 6A ), the solid particle emission may optionally include: controlling and / or regulating (eg by means of a controller 108 or regulation) of an electrical potential difference between the mask and the substrate 102 and / or the solid particles 104 , For example, an electrical potential of the mask can be controlled and / or regulated. For example, an electrical voltage applied to the mask (ie an electrical potential difference to an electrical reference potential) can be controlled or regulated. Alternatively or additionally, one may be attached to the solid particles 104 and / or on the substrate 102 applied electrical voltage (ie, an electrical potential difference to an electrical reference potential) are controlled or regulated. Alternatively, the electrical potential difference between the mask and the substrate 102 and / or the solid particles 104 also be controlled or controlled floating (ie independent of the electrical reference potential). By means of the electrical potential of the mask, electrophoresis can be controlled and / or regulated.

Electrophoresis can be the process of moving (flowing) the solid particles 104 denote by the electric field.

Optionally, the solid particle emission may further include moving the substrate 102 during this with at least the part of the separated solid particles 104 is coated. Alternatively or additionally, the solid particle emission may include moving the mask (if used) while the substrate is being used 102 with at least the part of the separated solid particles 104 is coated.

According to various embodiments, the substrate 102 comprise or be formed from an electrode of a rechargeable battery, a capacitor, a fuel cell or a solar cell.

For example, the target material may comprise or be formed from an electrolyte of the rechargeable battery or a fuel cell. The electrolyte may for example comprise or be formed from a solid electrolyte.

Alternatively, the substrate 102 For example, have a separator of a rechargeable battery or a fuel cell.

According to various embodiments, a device 152 for emitting solid particles 104 (Also called solid particle emission device 152 denotes) an electron beam gun 112 and an area 104q for picking up the solid particles 104 exhibit. The introduction of the electrons can by means of the electron beam gun 112 take place, by means of which an electron beam 112e in the direction of the solid particles 104 is emitted. Furthermore, the solid particle emission device 152 the control 108 having the introduction of the electrons (by means of the electron beam gun 112 ) and / or controlling the removal of the electrons. Optionally, the solid particle emission device 152 a container 106 which has the area 104q having.

2A . 2 B and 2C each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view in FIG 200a . 200c (viewed along a main processing side 102t of the substrate 102 ) and a plan view in 200b (looking towards the main processing side 102t of the substrate 102 ).

According to various embodiments, the method may be described in 200a . 200b comprising: coating the substrate 102 with a layer to be structured 202 ,

The layer to be structured 202 can be a target material 202t and a sacrificial material 202o have or be formed from it. The coating can be carried out in such a way that the sacrificial material 202o in time before the target material 202t and / or simultaneously with this over the substrate 102 is arranged.

The coating can optionally be done in such a way that the sacrificial material 202o in several separate areas 204 the layer to be structured 202 is or is arranged. In other words, the layer to be structured 202 several segments 204 (also as sacrificial segments 204 designated), which is the sacrificial material 202o have or are formed from it.

Adjacent areas of the plurality of separated areas 204 can a distance 204d have from each other. Each area of the several separated areas 204 can be an extension 204b (lateral expansion 204b ) exhibit. According to various embodiments, the distance 204d adjacent areas of the plurality of separated areas 204 be greater than their extent 204b (along a vertical direction 101 . 103 ). A lateral extent can be understood as an extension along a direction which is along one or the main processing side 102t . 102b runs.

Optionally, the several separated areas 204 or the sacrificial material 202o exposed. For example, a thickness 202p the several separated areas 204 or of the sacrificial material 202o equal to or greater than an average thickness 202d the layer to be structured 202 (middle layer thickness 202d ) and / or the target material 202t , For example, the multiple separated areas 204 or the sacrificial material 202o from the layer to be structured 202 protrude. A thickness in the context of the present description may be considered as a vertical extension, ie in the direction perpendicular to a surface of the substrate 102 (on a main processing page 102t ), be understood.

According to various embodiments, the average thickness 202d the layer to be structured 202 in a range from about 10 μm to about 20 μm, for example when the target material 202t having an active material. According to various other embodiments, the average thickness 202d the layer to be structured 202 in a range from about 100 μm to about 200 μm, for example when the target material 202t an electrolyte (eg, a liquid electrolyte). According to various other embodiments, the average thickness 202d the layer to be structured 202 in a range from about 10 μm to about 200 μm, for example when the target material 202t a metal (eg for forming electrically conductive webs or tracks).

According to various embodiments, the coating may be performed such that at least between the plurality of separate regions 204 the target material 202t is arranged. For example, the sacrificial material 202o into the target material 202t be embedded or become, as will be described in more detail below.

According to various embodiments, the layer to be structured 202 by means of solid particles 104 be formed or become. For example, the solid particles 104 the target material 202t have or be formed from it. Alternatively or additionally, the solid particles 104 the sacrificial material 202o have or be formed from it.

At least part of the solid particles 104 (ie some or all) can be detected by means of a solid particle emission via (along the processing direction 105 ) the substrate 102 be arranged or become. Alternatively or additionally, at least a portion of the solid particles 104 (ie some or all) by means of a liquid phase over the substrate 102 be arranged or, for example, from a dispersion and / or suspension, as described in more detail below. The solid particles 104 For example, colloids may be the liquid phase.

In 200c The method may include removing the sacrificial material 202o from the layer to be structured 202 so that a structured layer 202 is formed by the multiple areas 204 the layer 202 be opened.

Optionally, the method can be found in 200c further comprising: coating the structured layer 202 (after removing the sacrificial material 202o ).

3A . 3B and 3C each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view in FIG 300a . 300c (viewed along a main processing side 102t of the substrate 102 ) and a plan view in 300b (looking towards the main processing side 102t of the substrate 102 ).

According to various embodiments, the method may be described in 300a . 300b comprising: coating the substrate 102 with a layer to be structured 202 , eg similar to the previous description.

According to various embodiments, the coating may be performed such that between the multiple separated areas 204 and over the several separated areas 204 the target material 202t is arranged. In other words, the multiple separated areas 204 or the sacrificial material 202o be buried, for example by means of the target material 202t target material 202t partially covered. For example, the sacrificial material 202o into the target material 202t be embedded or become.

The fat 202p the several separated areas 204 or of the sacrificial material 202o may be greater than about 75% of the mean thickness 202d the layer to be structured 202 and / or the target material 202t and / or less than the average thickness 202d the layer to be structured 202 and / or the target material 202t , For example, a thickness 202d of the target material 202t which is over the several separated areas 204 or above the sacrificial material 202o is arranged to be smaller than the thickness 202p the several separated areas 204 or of the sacrificial material 202o ,

In 300c The method may include removing the sacrificial material 202o from the layer to be structured 202 so that the multiple areas 204 the layer 202 be opened. The removal of the sacrificial material 202o can through the target material 202t through. This may be the sacrificial material 202o For example, be converted into a gaseous state of aggregation or be, as will be described in more detail below.

When removing the sacrificial material 202o can optionally be a part of the target material 202t be removed or at least deformed. This can be the surface of the structured layer 202 enlarge.

4A . 4B and 4C each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view in FIG 400a . 400c (viewed along a main processing side 102t of the substrate 102 ) and a plan view in 400b (looking towards the main processing side 102t of the substrate 102 ).

According to various embodiments, the method may be described in 400a . 400b comprising: coating the substrate 102 with a layer to be structured 202 , eg similar to the previous description.

According to various embodiments, the coating may be performed such that between the multiple separated areas 204 and optionally over the several separated areas 204 the target material 202t is arranged as described above.

The sacrificial material 202o may be a first temperature (also referred to as the first transition temperature) and / or a first pressure (also referred to as the first transition pressure), in which this merges into a gaseous state of aggregation. Analogously, the target material 202t a second temperature (also referred to as the second transition temperature) and / or a second pressure (also referred to as second transition pressure), in which this merges into a gaseous state of aggregation.

According to various embodiments, the sacrificial material 202o for example, less than about 400 ° C, eg, less than about 300 ° C, eg, less than about 200 ° C, eg, less than about 100 ° C.

In general, the transition temperature may be a function of the external pressure such that the phase space of a material has a plurality of temperature-pressure tuples at which a material transitions to the gaseous state (eg, sublimates or boils), ie, the pressure of the Transient pressure is and where the temperature is the transition temperature. Each of the temperature-pressure tuples can by the transition pressure or the Transition temperature to be clearly characterized. For example, at a constant temperature, the pressure can be reduced, and when the transition pressure is exceeded, the material changes to the gaseous state. Alternatively or additionally, the temperature can be increased at a constant pressure, wherein the material passes into the gaseous state when the transition temperature is exceeded.

According to various embodiments, the first transition temperature may be less than the second transition temperature, eg, less than about 75% of the second transition temperature, eg, less than about 50% of the second transition temperature, eg, less than about 25% of the second transition temperature, eg, less than about 10%. the second transition temperature, eg, less than about 5% of the second transition temperature. Alternatively or additionally, the second transitional pressure may be less than the first transitional pressure, eg, less than about 75% of the first transitional pressure, eg, less than about 50% of the first transitional pressure, eg, less than about 25% of the first transitional pressure, eg, less than about 10%. the first transition pressure, eg less than about 5% of the first transition pressure. This can remove the sacrificial material 202o be relieved or be, for example when this is converted into a gaseous state of aggregation.

In 400c may include the method of removing the sacrificial material 202o the layer to be structured 202 to irradiate 402 , eg pulsed. The irradiation 402 can be done such that the layer to be structured 202 is brought to the first transition temperature or above. This can be a transfer 432 of the sacrificial material 202o take place in the gaseous state. For example, the sacrificial material 202o evaporate or sublimate.

According to various embodiments, the pulsed irradiation 402 from the main processing side 102t (also as the first main processing site 102t designated). Alternatively or additionally, the pulsed irradiation 402 from one of the first main processing page 102t opposite main processing side 102b (also as the second main processing page 102b designated). The irradiation of the second main processing side 102b can be done when the substrate 102 is transparent as well as when the substrate 102 is opaque. An opaque substrate 102 can serve as a radiation absorber, so that even a transparent sacrificial material 202o can be converted into the gaseous state of aggregation. A transparent substrate may be needed to fabricate an opto-electronic device, such as a display.

Optionally, the irradiation 402 pulsed done.

According to various embodiments, the irradiation 402 be carried out using at least one pulsed operated radiation source, eg at least one light source (eg at least one laser, at least one lamp, at least one flashlamp or at least one light emitting diode) or several light sources, wherein the layer can be pulsed by means of the radiation.

According to various embodiments, the irradiation 402 be carried out using at least one (eg pulsed or continuously operated) electron beam source, for example in the form of a line source, wherein the layer can be exposed pulsed by means of the radiation. For example, the electron beam source may provide an explicitly tuned energy density. The irradiation by means of the electron beam source can, for example, take place independently of the optical properties (eg of the opacity) of the sacrificial material or provide suitable irradiation (eg suitable penetration depth) irrespective of the optical properties (eg of the opacity) of the sacrificial material.

For example, the pulsed irradiation 402 with a pulse duration of up to 10 ms each. For example, the pulse duration of the pulsed radiation can be irradiated 402 shorter than 1 ms, eg shorter than 0.1 ms or shorter than 100 μs. Alternatively, the pulsed radiation for irradiation may have a duration (pulse duration) in a range of about 10 μs to about 10 ms, for example in a range of about 100 μs to about 1 ms, for example in a range of about 200 μs to about 500 μs ,

According to various embodiments, generating the pulsed radiation may be for irradiation 402 with a repetition rate of more than 0.1 Hz, eg with more than 1 Hz. For example, generating the pulsed radiation may be for irradiation 402 at a repetition rate in a range between about 10 Hz and about 0.1 Hz.

Alternatively, the irradiation 402 done continuously.

According to various embodiments, the irradiation 402 be carried out using at least one continuously operated irradiation source, for example, at least one light source (eg, at least one laser, at least one lamp, at least one light emitting diode) or multiple light sources, wherein the layer by means of the radiation can be exposed continuously. A continuous irradiation 402 may alternatively or additionally be done by means of a furnace. The furnace may be arranged to emit thermal radiation (heat radiation) in a thermal equilibrium. The thermal radiation can be in thermal equilibrium with the matter at the place of its formation.

According to various embodiments, alternatively or additionally to the irradiation 402 a heating of the layer to be structured 202 done by induction. For this purpose, for example, an electrically conductive substrate 102 be used, in which an electromagnetic alternating field is coupled.

According to various embodiments, the properties (eg, wavelength or kinetic energy) of the radiation 402 to the chemical composition and the properties (eg the layer thickness 202d or the absorption properties) of the layer to be structured 202 be adapted so that the layer to be structured 202 by means of irradiation 402 can be heated and the layer to be structured 202 at least partially structurally. For example, the pulsed radiation 402 be monochromatic or the spectral distribution according to a specification (eg, within a certain frequency range, or wavelength range, eg the visible wavelength range) can be adjusted by means of a suitable irradiation source. Optionally, the pulsed radiation 402 through a transparent substrate 102 be guided through. For example, the radiation 402 have a wavelength in a range of about 10 nm (nanometers) to about 10 mm (millimeters), for example, in a range of about 100 nm to about 1 mm.

Optionally, an absorption layer between the substrate 102 and the layer to be structured 202 be arranged or become. The absorption layer can have a larger absorption coefficient than the irradiation 402 have as the sacrificial material 202o and / or as the substrate 102 (eg if the substrate 102 is transparent). Alternatively or additionally, an absorption layer can optionally be provided over the layer to be structured 202 be arranged or become. By means of the one or more absorption layers, improved radiation absorption can be achieved. Becomes an opaque substrate 102 can be used on an absorption layer between the layer to be structured 202 and the substrate 102 be waived. Illustratively, the absorption layer can be clearly illustrated by means of the opaque substrate 102 be or be provided.

5A . 5B and 5C each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view in FIG 500a . 500c (viewed along a main processing side 102t of the substrate 102 ) and a plan view in 500b (looking towards the main processing side 102t of the substrate 102 ).

According to various embodiments, the method may be described in 500a . 500b for coating the substrate 102 have, a plurality of separate segments 204 to form what the sacrificial material 202o have or are formed from it. Between the several separated segments 204 can the substrate 102 exposed.

The separated segments 204 can a mask 902 (also as a victim mask 902 ), which form a contiguous area 502o in which the mask 902 is open. In other words, the mask 902 a contiguous (eg path-coherent) opening 502o comprising the substrate 102 exposes. In other words, the sacrificial material 202o a mask 902 above the substrate 102 form, with the mask 902 a coherent opening 204o has, for example through which the target material 102t through or at least can get into it.

According to various embodiments, the method may be described in 500c comprising: arranging the target material 202t above the substrate 102 and over the several separated segments 204 , In other words, the multiple separated segments 204 with the target material 202t be covered or become.

6A and 6B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view in FIG 600a (viewed along a main processing side 102t of the substrate 102 ) and a plan view in 600b (looking towards the main processing side 102t of the substrate 102 ).

According to various embodiments, the method may be described in 600a . 600b have a mask 502 above the substrate 102 to arrange, for example, between the substrate 102 and a solid particle emission device 152 , The process can be carried out in a vacuum, ie at a pressure of less than 0.3 bar. The vacuum may or may not be provided by means of a vacuum chamber, as described in more detail below.

The mask 502 can have several openings 502o have, of which adjacent openings 502o the plurality of separate openings 502o a distance 504d may have from each other. Each opening of the several separated openings 502o can be an extension 512b (lateral expansion 512b ) exhibit. Optionally, the distance 204d adjacent opening of the plurality of mutually separated openings 502o be smaller than their extent 512b (along a vertical direction 101 . 103 ).

7A and 7B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view in FIG 700a . 700b (viewed along a main processing side 102t of the substrate 102 ).

According to various embodiments, the method may be described in 700a . 700b comprise: emitting solid particles 104 , eg by means of the solid particle emission device 152 , in the direction of the substrate 102 , At least part of the emitted solid particles 104 can through the several openings 502o pass through. The solid particles 104 can be the target material 202t have or be formed therefrom (also as target material-solid particles 104t designated).

In 700a The method may include the mask 502 at a distance 502d from the substrate 102 to arrange. The mask 502 in can in 700a For example, comprise or be formed from a metal. After coating, the mask can 502 for coating an additional substrate 102 to be used again (also as an exchange mask 502 designated). Optionally, the mask 502 between coating several substrates 102 getting cleaned.

In 700b The method may include the mask 902 in physical contact with the substrate 102 to arrange. The mask 902 in can in 700a for example, the sacrificial material 202o have or be formed from it (also as a sacrificial mask 902 designated). In 700b can be the target material 202t have a larger particle density than the sacrificial material 202o , Alternatively or additionally, the target material 202t have a greater porosity than the sacrificial material 202o , Illustratively, this can be done by means of the solid particles 104 provided target material 202t be porous. Becomes the sacrificial material 202o removed, the porous target material 202t the layer 202 remain.

According to various embodiments, the patterned layer 202 (ie if the sacrificial material 202o was removed) or the target material 202t be porous, ie have cavities. For example, the layer 202 or the target material 202t a network of interconnected pores (voids), so that it is gas-permeable. For example, the layer 202 or the target material 202t have a porosity in a range of about 10% to about 95%, eg, in a range of about 25% to about 75%, eg, greater than about 40%, eg, greater than about 50%, eg, greater than about 60 %, eg greater than about 70%.

According to various embodiments, the term porous or porosity may refer to a region or a body (eg, the layer 202 or the substrate 102 ), as the region or body has the matrix and the voids. According to various embodiments, porosity can be understood to mean a dimensionless measurand which denotes the ratio of void volume to total volume of the region or of the body. A mass density of the area or the body can increase with increasing porosity, vividly because the cavities are taken into account.

According to various embodiments, the term porous or porosity relative to a material can be understood as the material forming a solid matrix in which the cavities are arranged. In other words, the material may be understood as the proportion of the porous region which is in a solid state of aggregation. According to various embodiments, the porosity of the material may be understood to be a dimensionless measurand, which is the ratio of void volume to total volume (volume of material and volume of cavities) that the solid matrix spans.

8A and 8B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view in FIG 800a . 800b (viewed along a main processing side 102t of the substrate 102 ).

According to various embodiments, the method may be described in 800a comprising: generating and / or obtaining an electric field 802a between the substrate 102 and the mask 502 , The electric field 802a can be generated and / or obtained by placing between the substrate 102 and the mask 502 an electrical potential difference (ie, an electrical voltage) is generated and / or obtained, for example by means of the controller 108 , According to various embodiments, the mask 502 have an electrically conductive material (eg a coating) or from it be formed. This can be a more uniform electric field 802a have as a consequence.

Alternatively or additionally, the method may be described in 800b comprising: generating and / or obtaining an electric field 802b between the solid particle emission device 152 and the mask 502 , The electric field 802b can be generated and / or obtained by mixing between the solid particle emission device 152 and the mask 502 an electrical potential difference (ie, an electrical voltage) is generated and / or obtained, for example by means of the controller 108 ,

The electric field 802a . 802b It can make the solid particles easier 104 through the openings 502o to guide the mask through. This can be a parasitic coating of the mask 502 be reduced or prevented. Thus, clearly has a replacement and cleaning of the mask 502 less often, which saves costs.

Optionally, the second electric field 802b be set up so that the solid particles 104 in the direction of the substrate 102 be collimated, for example in the direction of the openings 502o the mask. Alternatively or additionally, the first electric field 802b be set up so that the solid particles 104 in the direction of the substrate 102 be collimated and / or remain, eg from the direction of the openings 502o the mask.

9A and 9B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view in FIG 900a . 900b (viewed along a main processing side 102t of the substrate 102 ).

According to various embodiments, the method of coating the substrate 102 in 900a have, an exchange mask 502 above the substrate 102 to arrange, for example, between the substrate 102 and a solid particle emission device 152 , Furthermore, the method can be found in 900a comprise: emitting solid particles 104o by means of the solid particle emission device 152 in the direction of the substrate 102 , At least part of the emitted solid particles 104o can through multiple openings 502o the exchange mask 502 pass through. The solid particles 104o can the sacrificial material 202o have or be formed therefrom (also as sacrificial material-solid particles 104o designated).

In other words, several segments can be separated from each other 204 are formed, which sacrificial material-solid particles 104o have or are formed from it. Between the several separated segments 204 can the substrate 102 exposed.

By means of the exchange mask 502 can the victim mask 902 above the substrate 102 are formed, which several sacrificial material solid particles 104o or may be formed therefrom.

According to various embodiments, the method of coating the substrate 102 in 900b comprising: emitting sacrificial material solid particles 104o by means of the solid particle emission device 152 in the direction of the substrate 102 , The sacrificial material solid particles 104o in 900b can be clearly larger than the sacrificial material solid particles 104o in 900a , The sacrificial material solid particles 104o can in 900b be separated from each other or are, for example, stochastic.

The emission of sacrificial material solid particles 104o can in 900b have less sacrificial material solid particles 104o in the direction of the substrate 102 to emit than to completely occupy the substrate 102 would be necessary. This allows a particle density of sacrificial material-solid particles 104o above the substrate 102 (Eg, a surface density, for example, based on the surface of the substrate 102 ) smaller than the reciprocal of the triple square of the mean particle diameter 204b the sacrificial material solid particles 104o , The triple square of the mean particle diameter 204b can vividly approximate that of a solid particle 104 represent occupied area (more precisely, it corresponds to the product of Pi and the square of the mean particle diameter 204b ).

The particle density of sacrificial material solid particles 104o above the substrate 102 can be clearly understood as partial density (ie, as a partial density) - analogous to the partial pressure in a gas mixture. For example, the partial density of sacrificial material solid particles 104o above the substrate 102 (eg, the total volume) is less than about 75%, eg, less than about 50%, eg, less than about 25%.

The particle density in terms of solid particles 104 (also referred to as particle area density) may be understood as a particle density of the sacrificial material solid particles 104o or a particle density of the target material solid particles 104 , The particle density can be greater, the smaller the average particle diameter of the solid particles 104 is, ie that these solid particles 104 then packed tight.

The particle density with respect to a surface, eg a substrate 102 , can understand are referred to as areal density, ie as the ratio of the number of solid particles 104 to that of the solid particles 104 spanned portion of the surface containing the solid particles 104 occupy. The particle density with respect to a region, a material or a body (eg a layer) can be understood as a volume density, ie as a ratio of the number of solid particles 104 to that of the solid particles 104 clamped portion of the volume (the area, the material or the body), which are the solid particles 104 occupy.

For example, one of the sacrificial material solid particles 104o occupied part of the surface of the substrate 102 For example, none may be about 50%, eg less than about 25%, eg less than about 25%.

For example, several segments separated from each other 204 are formed, each of which segment 204 exactly one sacrificial material-solid particles 104o has or is formed therefrom. Between the several separated sacrificial material solid particles 104o can the substrate 102 exposed.

In other words, the victim mask 902 several separated sacrificial material solid particles 104o which are above the substrate 102 be arranged or can be.

10A and 10B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view in FIG 1000a . 1000b (viewed along a main processing side 102t of the substrate 102 ).

According to various embodiments, the method of coating the substrate 102 in 1000a . 1000b comprising: emitting target material solid particles 104t , eg by means of the solid particle emission device 152 , in the direction of the substrate 102 , which with the sacrificial material 202o is coated.

In 1000b can be the target material 202t have a larger particle density than the sacrificial material 202o , Alternatively or additionally, the target material solid particles 104t be smaller (ie, have a smaller mean particle diameter) than the sacrificial material solid particles 104o , Alternatively or additionally, the target material 202t have a greater porosity than the sacrificial material 202o ,

Will be the target material 202t after the sacrificial material solid particles 104o deposited, the target material may be 202t also over the sacrificial material solid particles 104o attach. Then, the plurality of sacrificial particulate matter separated from each other 104o be buried, for example by means of the target material 202t covered, for example by means of the target material solid particles 104t covered. For example, the sacrificial material solid particles 104o into the target material 202t be embedded. The particle size 202p the plurality of separated sacrificial material solid particles 104o may be greater than about 75% of the mean thickness 202d the layer to be structured 202 and / or the target material 202t ,

Will be the target material 202t simultaneously with the sacrificial material solid particles 104o and / or deposited from a liquid phase, the target material may be 202t especially next to the sacrificial material-solid particles 104o attach. Then, the plurality of sacrificial particulate matter separated from each other 104o from the layer to be structured 202 protrude. For example, the particle size 202p the plurality of separated sacrificial material solid particles 104o equal to or greater than an average thickness 202d the layer to be structured 202 (middle layer thickness 202d ) and / or the target material 202t ,

As an alternative to the solid particle emission, the target material solid particles 104t from a liquid phase over the substrate 102 be arranged or become.

11A and 11B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view in FIG 1100a . 1100b (viewed along a main processing side 102t of the substrate 102 ).

According to various embodiments, the method may be described in 1100a have, the sacrificial material solid particles 104o pulsed to be irradiated 402 , The irradiation 402 may be arranged such that the sacrificial material solid particles 104o be brought to the transition temperature or more. In this case, the sacrificial material-solid particles 104o evaporate and / or sublimate.

Optionally, the pulsed irradiation 402 done on both sides of the substrate.

According to various embodiments, the method may be described in 1100b have the substrate 102 over which the sacrificial material solid particles 104o are arranged, by means of a gaseous and / or liquid target material 1102 to coat. In 1100b can be the target material 202t by means of physical vapor deposition 1102 , a chemical vapor deposition (CVD) 1102 , an atomic situation (ALD) 1102 , Plasma spraying 1102 or a liquid phase deposition 1102 above the substrate 102 be arranged or, for example, as an alternative to the target material solid particles 104t ,

Furthermore (eg subsequently or simultaneously), the sacrificial material-solid particles 104o are removed, for example, after arranging the sacrificial material solid particles 104o as described above.

According to various embodiments, the simultaneous removal (eg depending on material combination and / or application), ie simultaneously with the placement of the sacrificial material-solid particles 104o , be provided by the thermal input of heat for arranging the target material 202t used coating process for removing the sacrificial material solid particles 104o is used. In other words, by means of arranging the target material 202t thermal energy in the sacrificial material solid particles 104o be registered such that the sacrificial material solid particles 104o be brought to the first transition temperature or above. This can be a transfer 432 the sacrificial material solid particles 104o take place in the gaseous state. By way of example, the coating process may include or be formed by electron beam coating or plasma spraying. This may indicate an additional step for removing the sacrificial material solid particles 104o be waived.

12A . 12B . 12C and 12D each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view (viewed along a main processing side) 102t of the substrate 102 ).

According to various embodiments, the sacrificial material 202o in 1200a from a liquid phase 1602 be or be processed. For example, the liquid phase 1602 the sacrificial material 202o and having or being formed from a liquid, eg a liquid solvent. For example, the liquid phase 1602 the sacrificial material 202o Form of a precursor or the target material solid particles 104o exhibit. Alternatively, the liquid phase 1602 the sacrificial material 202o have liquid or be formed therefrom, for example, the molten sacrificial material 202o , The liquid phase 1602 can by means of a printing process over the substrate 102 be arranged or, for example by means of a liquid phase distributor 1202a , eg a printhead 1202a or a sprayer 1202a ,

According to various embodiments, the target material 202t in 1200b from a liquid phase 1602 be or be processed. The liquid phase 1602 can be the target material 202t and having or being formed from a liquid, eg a liquid solvent. For example, the liquid phase 1602 the sacrificial material 202o Form of a precursor or the target material solid particles 104o exhibit. Alternatively, the liquid phase 1602 the target material 202t have liquid or be formed from it, for example, the molten target material 202t , The liquid phase 1602 can by means of a printing process over the substrate 102 be arranged or, for example by means of a liquid phase distributor 1202a , eg a printhead 1202a or a sprayer 1202a ,

According to various embodiments, the sacrificial material solid particles 104o in 1200c from a liquid phase 1602 be or be processed. The liquid phase 1602 can the sacrificial material-solid particles 104o and having or being formed from a liquid, eg a liquid solvent. Optionally, the liquid phase 1602 the target material 202t Form of a precursor or the target material solid particles 104o have (see 1200d ). Alternatively, the liquid phase 1602 the target material 202t have liquid or be formed from it, for example, the molten target material 202t , The liquid phase 1602 can by means of a printing process over the substrate 102 be arranged or, for example by means of a liquid phase distributor 1202a , eg a printhead 1202a or a sprayer 1202a ,

According to various embodiments, in 1200d the target material solid particles 104t and the sacrificial material solid particles 104o from a common liquid phase 1602 be or be processed. The liquid phase 1602 can the sacrificial material-solid particles 104o , the target material solid particles 104t and having or being formed from a liquid, eg a liquid solvent. The liquid phase 1602 can by means of a printing process over the substrate 102 be arranged or, for example by means of a liquid phase distributor 1202a , eg a printhead 1202a or a sprayer 1202a , In 1200d can be the layer to be structured 202 For example, a larger particle density of target material solid particles 104t as sacrificial material solid particles 104o exhibit. In other words, the target material 202t have a larger particle density than the sacrificial material 202o ,

In general, in 1200a . 1200b . 1200c . 1200d a suitable liquid phase deposition 1202a For example, a spray coating (also referred to as spraying spray coating), a curtain coating (also referred to as Curtain coating) and / or a slot die coating (also referred to as slot die coating), eg using an optional replacement mask 502 ,

13A and 13B each illustrate a coating arrangement 1300a . 1300b in a method according to various embodiments in a schematic side view or cross-sectional view (viewed along a Hauptprozessierseite 102t of the substrate 102 ).

Coating the substrate 102 can be done in a vacuum according to various embodiments, for example in a coating arrangement 1300a . 1300b ,

According to various embodiments, the coating arrangement 1300a . 1300b a vacuum chamber housing 802 in which a vacuum can be generated and / or obtained. The vacuum chamber housing 802 can be, for example, airtight, dustproof and / or vacuum-tight set up or become. The vacuum chamber housing 802 may have one or more vacuum chambers. The or each vacuum chamber may have one or more vacuum areas 306b . 308b provide. The vacuum chambers of the vacuum chamber housing 802 may optionally be at least partially gas-separated from each other.

Furthermore, the vacuum chamber housing 802 with a pump system 804 (comprising at least one high vacuum pump) to be coupled. The pump system 804 can be set up, the vacuum chamber housing 802 to withdraw a gas (eg the process gas), so that within the vacuum chamber housing 802 a vacuum (ie, a pressure less than 0.3 bar) and / or a pressure in a range of about 1 mbar to about 10 ^-3 mbar (in other words, a fine vacuum) and / or a pressure in a range of about 10 ^-3 mbar to about 10 ^-7 mbar (in other words high vacuum) or a pressure of less than high vacuum, for example, less than about 10 ^-7 mbar (in other words ultrahigh vacuum) can be provided.

According to various embodiments, the coating arrangement 1300a . 1300b a gas supply 1716 exhibit. By means of the gas supply 1716 can the vacuum chamber housing 802 a process gas is supplied to form a process atmosphere in the vacuum chamber housing 802 , The process gas may include, for example, an inert gas or be formed therefrom. Alternatively or additionally, the process gas may comprise or be formed from nitrogen, hydrogen, argon and / or carbon. The process pressure can be formed from a balance of process gas, which by means of the gas supply 1716 supplied and by means of the pump system 804 is withdrawn.

Furthermore, the vacuum chamber housing 802 be set up so that the vacuum conditions (the process conditions) within the vacuum chamber housing 802 (Eg process pressure, process temperature, chemical process gas composition, etc.) can be made or regulated (eg local), for example during coating, for example by means of a controller 108 , For example, by means of the vacuum chamber housing 802 at least one vacuum area 306b . 308b , eg several vacuum areas 306b . 308b be provided with mutually different vacuum conditions.

According to various embodiments, the controller may 108 for controlling and / or regulating an optional substrate temperature control device 1124 (eg comprising a heating device and / or a cooling device), so that a process temperature (eg of the substrate 102 and / or the process gas), for example during processing (eg during coating), can be controlled and / or regulated. For example, the controller 108 be configured to control and / or regulating an electrical power, which the substrate temperature control device 1124 supplied, and / or a thermal power which is dissipated by this.

According to various embodiments, the controller may 108 for controlling and / or regulating the gas supply 1716 and / or the pump system 804 be set so that a process pressure and / or a process gas composition can be controlled and / or regulated. For example, the controller 108 be arranged for controlling and / or regulating a standard volume flow of process gas, which by means of the gas supply 1716 supplied and / or by means of the pump system 804 is withdrawn.

In the vacuum chamber housing 802 (eg in a first vacuum chamber) can be at least one vacuum region 306b , eg a first vacuum area 306b be arranged. Further, in the vacuum chamber housing 802 (eg in the first vacuum chamber) a solid particle emission device 152 be arranged to emit solid particles 104 (eg the sacrificial material solid particles 104o and / or the target material solid particles 104t ) in the first vacuum area 306b into it. In other words, the solid particle emission can occur in a vacuum. The first vacuum area 306b can be a coating area 306b be.

In the vacuum chamber housing 802 (eg in a second vacuum chamber or in the first Vacuum chamber) can at least an additional vacuum area 308b , eg a second vacuum area 308b be arranged. Further, in the vacuum chamber housing 802 (eg in the second vacuum chamber) a thermal structuring device 308 be arranged to structure the coating to be structured 202 (also as a layer to be structured 202 designated) of the substrate 102 , For example, the thermal structuring device 308 for providing radiation, eg of pulsed radiation (also referred to as radiation pulses). The second vacuum area 308b can be a structuring area 308b be.

For example, the thermal structuring device 308 at least one irradiation device, for example a light source (eg a laser, a lamp, a flash lamp or an X-ray source), a heat radiation source or a particle source (eg an electron source or a proton source). The at least one irradiation device may be a pulsed or a continuously operated irradiation device. In other words, by means of the at least one thermal structuring device 308 a pulsed or a continuous radiation 402 (For example, electromagnetic radiation, such as light, heat radiation and / or particle radiation, such as electron radiation and / or ion radiation) are generated, for example, a continuous electron beam 402 by means of an electron beam gun (eg by means of a line source) or a pulsed flash of light 402 by means of a flashlamp (eg a gas discharge lamp or a light emitting diode).

The thermal structuring device 308 For example, it may include or be formed from one or more flash lamps. The or each flashlamp may comprise a gas discharge lamp which is pulsed, eg by means of the controller 108 , For pulsed operation of the or each gas discharge lamp, a current pulse may be discharged through the gas discharge lamp.

By means of the thermal structuring device 308 can be a rapid thermal processing (annealing) of the layer to be structured 202 (eg rapid thermal processing - RTA, eg by means of a flash lamp).

According to various embodiments, the controller may 108 for controlling and / or controlling the solid particle emission device 152 and / or the thermal structuring device 308 be set up, for example by controlling a quantity of material and / or thermal energy (eg radiation energy) and / or regulate which per time in the direction 105 of the substrate 102 is emitted.

Furthermore, the coating arrangement 1300a an unwinding roll 502a for unwinding a substrate 102 have, so that the substrate 102 in the at least one vacuum area 306b . 308b is brought in. Furthermore, the coating arrangement 1300a a take-up roller 502b for winding up the substrate 102 have, which from the at least one vacuum region 306b . 308b is brought out. In other words, the substrate 102 be processed by roll-to-roll.

Furthermore, the coating arrangement 1300a a variety of transport wheels 508 which define a transport path along which the substrate 102 (eg a belt-shaped substrate) between the unwinding roll 502a and the take-up roller 502b through the at least one vacuum area 306b . 308b is transported through, for example in a transport direction 102s ,

Alternatively, the coating arrangement 1300b a variety of transport wheels 508 which is used to transport a plate-shaped substrate 102 in the transport direction 102s are set up. The plate-shaped substrate 102 can, for example on the transport wheels 508 lying on and / or inserted into a substrate carrier transported.

Furthermore, the coating arrangement 1300a . 1300b a drive system 518 comprising at least part of the plurality of transport rollers 508 , and optionally with the unwinding roller 502a and the take-up roller 502b , coupled 518k is. For example, the drive system 518 by means of chains 518k , Straps 518k or gears 518k with the roles 508 . 502a . 502b be coupled. The transport wheels 508 and the drive system 518 may be part of the positioning device.

The control 108 can to control 518k and / or rules 518k of the drive system 518 be set up, for example, to control 518k and / or rules 518k a transport speed and / or a position of the substrate 102 during coating and / or irradiation, eg on the basis of a coating progress and / or a structuring progress.

According to various embodiments, the coating arrangement 1300a . 1300b optionally at least one substrate pretreatment device 310 (ie, one or more substrate pretreatment devices 310 ) for pretreating the substrate 102 , eg for chemically activating the substrate 102 , For example, the at least one substrate pretreatment device 310 be set up the substrate 102 to chemically activate, for example, to chemically activate its surface, the substrate 102 to clean and / or the substrate 102 to etch.

For example, the at least one substrate pretreatment device 310 have an etching device or be formed therefrom for etching the substrate 102 , Alternatively or additionally, the at least one substrate pretreatment device 310 at least one sputter etching source, at least one plasma source, at least one glow device and / or at least one etching gas source have or be formed therefrom. For example, the pretreatment of the substrate 102 have the substrate 102 by sputter etching; Ion etching and / or glowing to treat.

Optionally, by means of the at least one substrate pretreatment device 310 a water film from the substrate 102 be removed. Alternatively or additionally by means of the substrate pretreatment device 310 a number of open chemical bonds of the substrate 102 (Also called chemical activation) are increased, which, for example, the adhesion and the formation of the layer to be structured 202 on the substrate 102 can improve.

Alternatively or additionally, a substrate aftertreatment device 310 used to the substrate 102 comprising the structured coating 202 (also as a structured layer 202 post-treated, eg similar to the pretreatment. For example, the substrate 102 having the opened layer 202 selectively heated (eg annealed) and / or etched.

Optionally, the mask 502 be stored (if used) by means of the positioning device. The positioning device can be set up, for example, the mask in the coating area 306b to move. For example, the controller 108 be set up, the mask 502 and the substrate 102 at the same speed and / or in the same direction 102s to transport.

14A illustrates an energy store 1400a in a method according to various embodiments in a schematic side view or a schematic cross-sectional view (viewed along a Hauptprozessierseite 102t of the substrate 102 ).

The energy storage 1400a may according to various embodiments, a first electrode 1012 which has a first chemical potential. The first electrode 1012 can be a sheet-like substrate 102 (eg comprising copper or formed therefrom). The sheet-like substrate 102 may comprise or be formed from a film and / or a plate. For example, the film may have a thickness of less than about 100 microns, eg, less than about 50 microns.

Furthermore, the first electrode 1012 an active material 1012 which is above the sheet-like substrate 102 is arranged. The active material 1012 the first electrode 1012 (also as the first active material 1012 denotes) the first chemical potential of the first electrode 1012 provide. The first active material 1012 For example, it may contain or be formed from lithium iron phosphate (LFPO) (eg, in a lithium iron phosphate energy storage 1400a ), Lithium-manganese oxide (LMO) or be formed therefrom (eg in a lithium-manganese oxide energy storage 1400a ) or lithium titanate (LTO) (eg when the first electrode 1012 an anode is) or formed therefrom (eg in a lithium titanate energy store 1400a ), Lithium-nickel-cobalt-manganese oxide (LNCM), or formed from or formed from lithium-nickel-cobalt-aluminum oxide (LNCA) or have or formed from lithium-cobalt oxide (LiCoO) be (eg in a lithium-cobalt oxide energy storage 1400a ). For lithium-ion energy storage 1400a can be the active material 1012 also as lithium compound active material 1012 be designated.

The first active material 1012 can optionally by means of a first structured layer 202 may be provided according to various embodiments. Alternatively or additionally, the first active material 1012 in the form of solid particles 104 be or be provided.

Furthermore, the energy storage 1400a a second electrode 1022 having a second chemical potential. Between the first electrode 1012 and the second electrode 1022 can form an electrical voltage, for example, when the energy storage 1400a is charged, or which is approximately equal to the difference between the first chemical potential and the second chemical potential.

Optionally, the energy storage 1400a by means of an encapsulation 1030 be encapsulated or become the first electrode 1012 and the second electrode 1022 surrounds. The second electrode 1022 and the first electrode 1022 can be or become encapsulated together.

A pair of second electrode 1022 and first electrode 1022 can also be referred to as an energy storage cell. Optionally, the energy storage 1400a have multiple energy storage cell.

The substrate 102 can vividly a sheet-like carrier 102 have for the current collector or be formed therefrom, for picking up the electrical charges by means of the current collector, which by an ion exchange between the first electrode 1012 the first electrode 1022 and the second electrode 1022 takes place, for example, when the energy storage 1400a discharges. The ions, which are between the first electrode 1012 and the second electrode 1022 move (ion exchange), can be a transformation of stored chemical energy (for example, when the energy storage 1400a charged) into electrical energy, the electrical energy being an electrical voltage across the contacts 1012k . 1022k (please refer 5B ).

The encapsulation 1030 For example, it may comprise or be formed from a polymer. Optionally, the encapsulation 1030 a metallization and / or a contact 1012k . 1022k exhibit.

14B illustrates an energy storage 1400b According to various embodiments in a schematic side view or cross-sectional view (viewed along a Hauptprozessierseite 102t of the substrate 102 ).

According to various embodiments, the second electrode 1022 analogous to the first electrode 1012 be set up or be, as described in more detail below. The second electrode 1022 can be a sheet-like substrate 102 (eg comprising copper or formed therefrom), for example a foil similar to the foil of the first electrode 1012 ,

Furthermore, the second electrode 1022 a second active material 1022a which is on the sheet-like substrate 102 the second electrode 1022 is or is, wherein the second active material 1022a the second chemical potential of the second electrode 1022 provides.

The second active material 1022a can optionally by means of a second structured layer 202 may be provided according to various embodiments. Alternatively or additionally, the second active material 1022a in the form of solid particles 104 be or be provided.

The second active material 1022a the second electrode 1022 (eg the anode) may be different from the first active material 1012 the first electrode 1012 differ. The second active material 1022a For example, it may include or be formed from graphite (or carbon in another carbon configuration), nanocrystalline and / or amorphous silicon, or lithium titanate or lithium titanium oxide (LTO, eg Li ₄ Ti ₅ O ₁₂ ). have or be formed therefrom or have tin dioxide (SnO ₂ ) or be formed therefrom.

Furthermore, the energy storage 1100 a first contact 1012k which has the first electrode 1012 contacted, and eg with the first structured layer 202 is electrically connected. The first contact 1012k may have an exposed surface. Furthermore, the energy storage 1100 a second contact 1022k which has the second electrode 1022 contacted, and for example with a second structured layer 202 is electrically connected. The second contact 1022k may have an exposed surface. Between the first contact 1012k and the second contact 1022k can form an electrical voltage, for example, when the energy storage 1100 which corresponds approximately to the difference between the first chemical potential and the second chemical potential.

Optionally, the energy storage 1100 a separator 1040 exhibit. The separator 1040 can be the first electrode 1012 and the second electrode 1022 in other words spatially and electrically separate the negative and positive electrodes (ie, cathode and anode). The separator 1040 However, for ions that are between the first electrode 1012 and the second electrode 1022 move, be pervious. The ions, which are between the first electrode 1012 and the second electrode 1022 can move, a conversion of stored chemical energy (eg if the energy storage 1100 charged) into electrical energy, the electrical energy being an electrical voltage across the contacts 1012k . 1022k provides.

The separator 1040 may comprise or be formed from a microporous plastic and / or the separator 1040 may comprise or be formed from a non-woven fiberglass or polyethylene. According to various embodiments, the separator 1040 in the form of solid particles 104 or be provided as a dense solid electrolyte layer. Alternatively or additionally, the separator 1040 by means of the structured layer 202 be or be provided.

15A and 15B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view in FIG 1500b (viewed along a main processing side 102t . 102b of the substrate 102 ) and a plan view in 1500a (looking towards the main processing side 102t of the substrate 102 ).

According to various embodiments, the method may be described in 1500a have the layer to be structured 202 in the several areas 204 to open 204o by the sacrificial material 202o Will get removed. For example, the opened layer 202 (also as a structured layer 202 referred to) a plurality of openings 204o which are arranged in a pattern (eg at equal intervals 204d from each other) and / or between which the target material 202t is arranged. The target material 202t may include or be formed from a metal.

The structured layer 202 can have several bars 202s (eg metal tracks 202s ), which are the target material 202t or may be formed therefrom. From the several bridges 202s can be a first group along a first direction 101 and a second group along a second direction 103 extend (eg transversely thereto). The first group and the second group can vividly cross each other. The several bars 202s can form a network (eg a metal net).

The distance 204d adjacent openings 204o apart from each other, the web width 204d define. The expansion 204b the openings 204o can be larger than the one of the bars 202s (ie as the web width 204d ), eg more than ten times larger. For example, the extent 204b the openings 204o in a range of about 0.1 mm to about 1 mm. The bridge width 204d may be less than about 100 μm, eg in a range from about 1 μm to about 100 μm, for example in a range from about 3 μm to about 10 μm.

The several openings 204o can be more than 80% of the area of the substrate 102 occupy. This ensures the highest possible transparency of the structured layer 202 eg greater than about 80%, eg greater than about 90%, eg greater than about 95%. For example, the structuring of the layer 202 more than 80% of the layer to be structured 202 eg more than about 80%, eg more than about 90%, eg more than about 95%. Alternatively or additionally, the structured layer 202 have a thickness less than about 80 nm, eg less than about 40 nm, eg less than about 20 nm, eg in a range from about 15 nm to about 20 nm.

According to various embodiments, the method may be described in 1500b comprising: forming a capacitive area sensor by means of the target material 202t ie by means of the structured layer 202 (After opening).

The capacitive area sensor may be the structured layer 202 having several webs 202s exhibit. The structured layer 202 can on a sheet-like substrate 102 be or become angry. The sheet-like substrate 102 For example, it may comprise a polymeric film which may optionally be laminated to a glass substrate.

The structured layer (s) 202 each can have a sensor layer 202 provide. One at the corners of the textured layer 202 applied AC voltage can produce a constant, uniform electric field. If an electrically conductive body penetrates into the vicinity of the electric field (ie the capacitive area sensor), for example when the capacitive area sensor is touched, a small charge transport can be effected, which can be detected in the discharge cycle in the form of a current at the corners. The resulting electrical currents from the corners may be in direct proportion to the position of the penetrating body. The capacitive area sensor may be a controller 1702s (eg, a processor) which detects the resulting streams and provides information representing the position.

According to various embodiments, the method may be described in 1500b further comprising: forming a metallization comprising the target material 202t electrically contacted. The metallization may include one or more electrical lines connecting the controllers 1702s electrically conductively connect the plurality of webs, for example in at least the four corners.

The capacitive area sensor may for example be part of or form part of a touch-sensitive input device (also referred to as a touch-sensitive input device).

Alternatively or additionally, the capacitive surface sensor may be designed as an indicating surface sensor or be. Then, the capacitive area sensor may be an optional optoelectronic device 1702 have, for example, a display 1702 eg a screen. The ad 1702 can have multiple pixels, which by means of a video driver of the display 1702 be or can be controlled. For example, the video driver may be in the controller 1702s be implemented or be.

According to various embodiments, the substrate 102 on both sides with a structured layer 202 be coated or, for example, from two opposite sides 102t . 102b out.

16A and 16B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view.

According to various embodiments, the method may be described in 1600a comprising: forming a liquid phase 1602 (eg a dispersion 1602 ), which is the solid particles 104t . 104o has, for example, the sacrificial material solid particles 104o and / or the target material solid particles 104t , The liquid phase 1602 can be understood as a heterogeneous mixture (dispersion) of solid suspended particles (the solid particles 104t . 104o ) in a liquid. The liquid may be a carrier liquid into which the solid particles 104t . 104o be added. For example, the liquid may include or may be formed from an organic solvent (eg, ethanol and ethyl acetate or other carboxylic esters), water, and / or a binder (eg, a resin).

To form the liquid phase 1602 can be a particle container 106 be used in which the solid particles 104t . 104o be arranged or can be, for example, the sacrificial material solid particles 104o and / or the target material solid particles 104t , The particle container 106 For example, it can be a printer tank, for example if the liquid phase 1602 is printed. Alternatively, the particle container 106 a dosing be, for example, when the liquid phase 1602 is applied by means of a spin coating.

According to various embodiments, a first liquid phase 1602 which are more sacrificial material-solid particles 104o as target material solid particles 104t has, for example, only the sacrificial material solid particles 104o ,

Alternatively or additionally, a second liquid phase 1602 are formed, which less sacrificial material-solid particles 104o as target material solid particles 104t has, for example, only the target material solid particles 104t ,

According to various embodiments, the method may be described in 1600b comprising: coating the substrate 102 using the liquid phase 1602 , Coating the substrate 102 may comprise the liquid phase 1602 above the substrate 102 to arrange, for example by means of a liquid phase distributor 1202a (see 12A . 12B . 12C and 12D ) or by means of a metering device.

Forming the layer to be structured 202 from the liquid phase 1602 may comprise a solvent from the layer to be patterned 202 bring out (also called dry), so that the remaining solid particles 104t . 104o a solid layer 202 form.

For example, the first liquid phase 1602 be dried before the substrate 102 by means of the second liquid phase 1602 is coated.

Alternatively or additionally, the substrate 102 by means of a liquid phase 1602 which are the sacrificial material solid particles 104o and the target material solid particles 104t having.

In general, in 1600b a suitable liquid phase deposition 1202a , such as a spray coating, a curtain coating and / or a slot die coating.

17A and 17B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view.

According to various embodiments, the method may be described in 1700a have: Co-deposition of solid particles 104t (also simply referred to as particles) of a first type (eg nanoparticles) with solid particles 104o of a second type (eg microparticles), ie together (at the same time). The solid particles 104t first type can be the target material 202t have or be formed from it. The solid particles 104o second type may be the sacrificial material 202o have or be formed from it.

The solid particles 104t of the first type (also called target material solid particles 104t may be smaller in average size than the solid particles 104o of the second type (also called sacrificial particulate matter 104o designated). Alternatively or additionally, the solid particles 104t of the first type has a larger particle density in the layer to be patterned 202 have as the solid particles 104o of the second type.

According to various embodiments, instead of the solid particles 104t of the first type, the target material 202t be formed from a precursor or a gaseous material or, for example, a target material 202t which has little or no pores, ie a clearly massive target material 202t ,

According to various embodiments, the solid particles 104t of the first type are deposited by means of a solid particle emission. Optionally, to the Solid particle emission carried out a physical vapor deposition (eg, a thermal evaporation). By means of the vapor deposition, the target material 202t (Eg, if this is to be massive) and / or a bonding material to be deposited.

By means of physical vapor deposition, a gaseous coating material may or may not be provided. For example, the physical vapor deposition may include or be formed by thermal evaporation or sputtering. Alternatively or in addition to physical vapor deposition (PVD), chemical vapor deposition (CVD) or atomic layer deposition (ALD) may be used.

For example, the adhesion promoting material may have adhesion of the solid particles 104t of the first type (ie, the target material solid particles 104t ) with each other and / or to the substrate 102 improve. Alternatively or additionally, the adhesion promoting material may have adhesion of the solid particles 104o of the second type (ie, the sacrificial material solid particles 104o ) to the substrate 102 and / or to the solid particles 104t of the first type.

Alternatively or in addition to the adhesion promoting material, an electrically conductive material may be vaporized, eg, a metal or carbon. The electrically conductive material may be an electrical conductivity of the layer to be structured 202 improve. For example, the electrically conductive material may become the target material solid particles 104t be deposited.

In other words, the layer to be structured 202 by means of a solid particle emission (also referred to as particle emission process) plus an optional thermal evaporation. For example, this can increase mechanical and / or chemical strengths, electrical conductivity and / or ionic conductivities.

The substrate 102 For example, it may comprise or be formed from a film, eg a glass film, a metal foil and / or a polymer film, eg a laminate of several films, of which at least one film may comprise or be formed from a metal and another film may comprise a polymer or can be formed from it; or of which at least one film may comprise or may be formed from a glass and another film may comprise or be formed from a polymer.

According to various embodiments, the method may be described in 1700b have: transferring the sacrificial material 202o in a gaseous state of aggregation. The conversion into the gaseous state of aggregation can also be referred to as volatilization.

By means of flash lamp annealing (FLA) or rapid thermal process (RTP), selective volatilization (evaporation and / or sublimation) of the solid particles can be achieved 104o of the second type (eg, microparticles).

The target material-solid particles 104t may include or be formed from an active material. The sacrificial material solid particles 104o may include or be formed from an inorganic and / or organic material (eg, inorganic or organic microparticles). Compared to the active material (in the form of smaller solid particles 104t , eg nanoparticles) may be the victim material 202o be low melting and have a high vapor pressure.

According to various embodiments, the method may be described in 1700b comprise: explosively removing a portion of the target material 202t (eg an active material). This can be vacancies 204o remain. High specific surface areas can be the result. In addition, depending on the registered energy density during the irradiation, recrystallization and / or at least partial melting of the target material can also take place 202t be effected.

Becomes an energy storage using the target material 202t formed, the recrystallization and / or at least partially melting, for example, increase the efficiency of the energy storage (eg, a battery). As an active material for a lithium-ion energy storage (for example, a lithium-ion battery), a suitable chemical composition may be used, for example LMC (lithium manganese cobalt oxide), NMC (lithium nickel manganese cobalt oxide), LFP (Lithium-iron-phosphate), LiS (lithium-sulfur), silicon or silicon composites, graphite, lithium, or LTO (lithium titanate).

For example, the sacrificial material 202o or can the sacrificial material-solid particles 104o a polymer, a monomer, PTFE, carbon in a carbon modification (eg, in the form of graphite), a metal (such as lithium), or formed therefrom.

Alternatively to the solid particle emission of the solid particles 104o . 104t may be a liquid phase deposition for coating the substrate 102 be used, for example, slot die coating, spraying or printing. For example, the target material 202t in the form of nanoparticles by means of a nanosuspension solution and / or a nanodispersion solution on the substrate 102 be arranged or become. Alternatively or additionally, the sacrificial material 202o in the form of microparticles by means of a microsuspension solution and / or microdispersion solution on the substrate 102 be arranged or become.

According to various embodiments, the substrate 102 comprise or be formed from a transparent material or comprise or be formed from an opaque material (ie an optically dense substrate 102 ).

According to various embodiments, the substrate 102 Glass, metal (such as stainless steel, aluminum, copper) and / or a polymer (such as polyethylene and / or polyethylene terephthalate) and / or mica (eg, having phyllosilicate or formed therefrom) or be formed therefrom.

18A and 18B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view.

According to various embodiments, the method may be described in 1800a have: short-term tempering 402 the layer to be structured 202 , The short-term tempering 402 can be unilateral (eg from the first main processing side 102t or from the second main processing side 102b off). Alternatively, the short-term tempering 402 can be two-sided (eg from the first main processing page 102t and from the second main processing side 102b off).

According to various embodiments, the method may be described in 1800a comprising: generating a particle stream 1802 (ie a stream 1802 from solid particles 104 ). The particle flow 1802 can the sacrificial material-solid particles 104o and / or the target material solid particles 104t have or be formed from it. The solid particles 104 of the particle stream 1802 can be a direction of movement 105 to the substrate 102 towards (ie in the coating direction 105 ) exhibit.

The particle flow 1802 can on the substrate 102 be directed. Between the particle flow 1802 and the substrate may be a mask 502 (also as a shadow mask 502 or exchange mask 502 to be arranged). In other words, the particle flow 1802 on the shadow mask 502 be or be directed.

For example, by means of a solid particle emission, a collective particle emission can be effected, wherein the emitted solid particles 104 in the direction of the substrate 102 stream.

According to various embodiments, the emitted solid particles 104 have an electrostatic charge, ie differ from a reference potential, eg electrical ground). For example, the emitted solid particles 104 have an electrically negative charge (with respect to the reference potential).

According to various embodiments, it has been recognized that the electric charge of the solid particles 104 can be used to guide their movement 105 substratum 102 to influence. For example, the electric charge of the solid particles 104 be used to the solid particles 104 preferably through the openings 502o (eg slots 502o ) of the mask 502 to guide (eg distract) by the mask 502 (For example, an electrically conductive mask 502 ) is applied to an electrically negative potential. The electric potential of the mask 502 For example, it may be more negative than the electrical potential of the solid particles 104 ,

19 illustrates a mask 502 . 902 for structuring a layer according to various embodiments in a schematic side view or cross-sectional view (eg transverse to a particle stream), eg the sacrificial mask 902 and / or the replacement mask 502 ,

The mask 502 . 902 can have several elongated openings 502o exhibit. The openings 502o can move along one direction 1901 extend.

According to various embodiments, the direction 1901 transverse to a transport direction 102s of the substrate 102 be aligned or become. Then you can do the substrate 102 and the mask 502 . 902 be set in a fixed position (orientation and / or orientation) relative to each other. For example, the substrate 102 (For example, a band-shaped substrate 102 ) are coated sequentially.

Will the replacement mask 502 Fixedly arranged, the substrate can 102 be coated in several successive steps, wherein in successive steps each adjacent areas of the substrate 102 be coated. During coating in each step, the substrate may 102 be arranged or be stationary. Between the successive steps, the substrate 102 to be transported by one area. If the substrate 102 is moved, the coating may be or may be stopped. Alternatively, the replacement mask 502 be as big as the substrate 102 or larger. In order to can be single (eg plate-shaped) substrate 102 be sequentially coated or be.

Alternatively, the replacement mask 502 equal to the substrate 102 to be moved.

According to various embodiments, the direction 1901 along to a transport direction 102s of the substrate 102 be aligned or, for example, a band-shaped substrate 102 or a plate-shaped substrate 102 , Then the substrate can 102 relative to the replacement mask 502 to be moved. Illustratively, the substrate 102 be continuously coated. For example, the substrate 102 be continuously transported during coating.

20A and 20B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view (viewed along a main processing side) 102t of the substrate 102 ).

According to various embodiments, the sacrificial material 202o in 2000a from a liquid phase 1602 above the substrate 102 be arranged or, for example, in several separated segments 204 such as islands, honeycomb or webs. After the sacrificial material 202o above the substrate 102 has been arranged, the target material 202t above the substrate 102 be arranged or, for example, over the target material 202t and between the segments 204 ,

For example, the sacrificial material 202o by means of a printing process (also referred to as additive lithography, English Printing) are arranged. For example, a large-area microstructure or nanostructure can be formed, which is the sacrificial material 202o or may be formed therefrom.

According to various embodiments, the sacrificial material (eg, organic or inorganic) 202o be set up as described above. For example, the sacrificial material 202o be arranged in a honeycomb structure or other geometric pattern or be. In other words, a microstructure or nanostructure may or may be formed which is the sacrificial material to be subtracted (to be evaporated) 202o or may be formed therefrom. After coating the microstructure or nanostructure with the target material 202t and subtracting the sacrificial material 202o , may be the corresponding residue of the target material 202t next to the segments 204 stay behind (also referred to as subtraction lithography).

According to various embodiments, the method may further be described in 2000b have: transferring the sacrificial material 202o in a gaseous state, eg by irradiation 402 the layer to be structured 202 , This can be an opening of the layer to be structured 202 in the fields of 402 take place in which the sacrificial material 202o was arranged. In other words, the layer to be structured 202 be structured by openings 204o in the layer to be structured 202 be formed.

21 . 21B and 21C each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view (viewed along a main processing side) 102t of the substrate 102 ).

According to various embodiments, the method may be described in 2100a comprising: structuring a first layer 202 (eg as described above); and structuring a second layer 212 (after the first shift 202 ), the first layer 202 between the substrate 102 and the second layer 212 is arranged.

The first shift 202 can be a first target material 202t have or be formed from it. The first shift 202 can be structured by optionally a first sacrificial mask 902 (ie a first sacrificial material 202o ) or by a first replacement mask 502 is used as described above. The first victim mask 902 (or the first sacrificial material 202o ) and / or the first target material 202t can be optional in the form of solid particles 104 be or be provided.

The second layer 202 can be a second target material 212t have or be formed from it. The second layer 212 can be structured by optionally a second sacrificial mask 902 (ie a second sacrificial material 202o ), a second exchange mask 502 or the first replacement mask 502 is used as described above. The second victim mask 902 (or the second sacrificial material 212o ) and / or the second target material 212t can be optional in the form of solid particles 104 be or be provided.

Optionally, a filler material 2102 (eg the second target material 212t having or formed therefrom) in the openings 204o the first layer 202 be arranged or, for example, in an optional first coating step. For example, the first sacrificial material 202o with the filler 2102 (eg the second target material 212t ) be replaced. Thus, the openings can 204o the first layer 202 with the filler 2102 (eg the second target material 212t ) at least partially (partially or completely) filled. Alternatively or in addition to the second target material 212t can the filler material 2102 comprise or be formed from another material, eg a metal or a holding metal. Subsequently, for example in an optional second coating step, the second target material 212t over the first layer 202 be arranged or, for example, the first target material 202t at least partially covering.

Will be a second victim mask 902 for structuring the second layer 212 This can be done after arranging the filler material 2102 be formed or become. Will be an exchange mask 502 for structuring the second layer 212 This can be done after arranging the filler material 2102 between the substrate 102 and the solid particle emission device 152 be arranged or become.

Will be a second victim mask 902 for structuring the second layer 212 used, the second sacrificial mask 902 above the filler 2102 be arranged or, for example over the first target material 202t , Optionally, the second sacrificial mask 902 a distance to the first target material 202t have, for example by means of the filling material 2102 or by means of the second target material 212t , In other words, between the second sacrificial mask 902 and the first target material 202t the filling material 2102 or the second target material 212t be arranged or become.

According to various embodiments, the method may be described in 2100b comprising: coating the second layer 212 with a third layer 222 , The third layer 222 can optionally be structured, as described above, for example by means of a sacrificial mask 902 and / or by means of an exchange mask 502 ,

The structured second layer 212 can have several second openings 214o exhibit.

According to various embodiments, the method may be described in 2100c comprising: forming a layer stack having multiple (eg, two, three or more) layers, each layer being patterned by a method according to various embodiments.

According to various embodiments, the first patterned layer 202 or their first target material 202t have a greater electrical conductivity than the second structured layer 212 and / or as the third structured layer 222 , For example, a first structured layer 202 an electrically conductive first target material 202t have or be formed therefrom, for example a metal or carbon in a carbon modification (eg Leitruß or graphite). Illustratively, the first target material 202t comprise or be formed from an electrically active material.

For example, a second structured layer 212 an ion-storing second target material 212t have or be formed therefrom, for example an active material (eg a cathode active material), such as, for example, NMC, LCO (lithium cobalt oxide) and / or LFP. Illustratively, the second target material 212t comprise or be formed from a capacitive active material.

Alternatively, the second structured layer 212 have an anode active material or be formed therefrom, for example, having silicon or formed therefrom, for example in the form of silicon particles 104t ,

Alternatively or additionally, a third structured layer 222 an ion-conducting third target material 222T have or be formed therefrom, for example a solid electrolyte such as LiPON (lithium-phosphorus-oxinitride).

According to various embodiments, the target materials may be 202t . 212t . 222T differ in at least their chemical composition, their chemical reactivity, their Iohnenleitfähigkeit, their electrical conductivity, their thickness and / or their roughness.

Alternatively or in addition to the third structured layer 222 It is also possible to use a liquid electrolyte which optionally is in the second structured layer 212 penetrates if this is porous.

The substrate 102 Optionally, it may comprise or be formed from an electrode of an energy store, for example its current collector (also referred to as a current conductor).

Illustratively, the first structured layer 202 the second target material 222T (Eg, the active material) electrically better with the substrate 102 (eg, a current collector), as a conventional smooth layer.

22 and 22B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view (viewed along a main processing side) 102t of the substrate 102 ).

According to various embodiments, the substrate 102 in 2200a a circuit board 2112 have or be formed from it. The layer to be structured 202 may include or be formed from a metallization.

After structuring the layer 202 (ie if the structured layer 202 is formed), the layer can 202 several tracks 2104 exhibit. The multiple tracks 2104 can have at least two contact areas 2104a . 2104b . 2104C the circuit board 2112 electrically conductive interconnect. For example, the circuit board 2112 a printed circuit board 2112 have or be formed from it.

The circuit board 2112 may comprise or be formed of an electrically insulating material in or on which the electrically conductive compounds 2104 (Conductors 2104 ) or can be formed. The electrically insulating material may optionally comprise a fiber reinforced plastic or a kraft paper. The multiple tracks 2104 may comprise or be formed from copper, for example at a distance of 35 microns or less from each other. At least one contact area 2104a . 2104b . 2104C the circuit board 2112 may be arranged to receive at least one electronic component, eg a chip. For example, the at least one component can be applied to the at least one contact region by means of soldering surfaces (contact pads) or by means of soldering pads 2104a . 2104b . 2104C be soldered or become.

According to various embodiments, the substrate 102 in 2200b an electrode 2212 have a capacitor or be formed from it. The layer to be structured 202 can be a functionalization of the substrate 102 provide. The substrate 202 may comprise or be formed from a metal, eg copper.

The capacitor can be two electrodes 2212 . 2222 have, which are electrically isolated from each other, for example by means of a dielectric 2252 , At least one of the two electrodes 2212 . 2222 a structured according to various embodiments layer 202 exhibit. The layer 202 can be a variety of target material solid particles 104t have or be formed from it. The target material solid particles 104t may include or be formed from an electrode material, eg, carbon in a carbon modification (eg, carbon) and / or titanium.

According to various embodiments, the substrate 102 in 2200c a solar cell 2220 have or be formed therefrom, for example a thin-film solar cell. The solar cell 2220 may comprise a semiconductor layer (eg, a silicon layer) in which a pn junction is formed, eg, a laterally extending pn interface. The solar cell 2220 can be adapted to convert radiant energy, eg sunlight, into electrical energy.

The structured layer 202 can be a contacting of the solar cell 2220 provide. For example, the structured layer 202 several busbars 2202b have or be formed from it. The structured layer 202 may include or be formed from a metal. Optionally, the structured layer 202 several metal fingers 2202f exhibit. Alternatively or additionally, the structured layer 202 a transparent electrically conductive oxide (also referred to as TCO) or be formed therefrom, for example, indium tin oxide (ITO), fluorine-tin oxide (FTO), aluminum-zinc oxide (AZO) and / or antimony tin Oxide (ATO).

According to various embodiments, a structured layer 202 be provided or which has a high specific surface area. The structured layer 202 does not necessarily have a high edge sharpness, so that the subtraction lithography described herein can be simplified and made more cost effective. For example, due to the explosive transfer of the sacrificial material 202o in the gaseous state of aggregation locally fractal structures in the target material 202t be generated, which remain, and the increase of the surface of the layer 202 continue to favor.

Claims (17)

Procedure ( 200a . 200c ) to form a structured layer ( 202 ) on a substrate ( 102 ), the method comprising: coating the substrate ( 102 ) with a layer to be structured ( 202 ) containing a target material ( 202t ) and a sacrificial material ( 202o ), wherein during the coating the sacrificial material ( 202o ) in front of the target material ( 202t ) and / or simultaneously with it above the substrate ( 102 ) is arranged; Where the placing of the sacrificial material ( 202o ) and / or the target material ( 202t ), solid particles ( 104 ) above the substrate ( 102 ) to arrange; and • removing the sacrificial material ( 202o ), so that several areas ( 204 ) of the layer ( 202 ). Procedure ( 200a . 200c ) according to claim 1, wherein the target material ( 202t ) has a larger particle density than the sacrificial material ( 202o ) and / or as the substrate ( 102 ). Procedure ( 200a . 200c ) according to claim 1, wherein the sacrificial material ( 202o ) a larger one Particle density than the target material ( 202t ) and / or as the substrate ( 102 ). Procedure ( 200a . 200c ) according to one of claims 1 to 3, wherein in the coating the target material ( 202t ) of the sacrificial material ( 202o ) remains uncovered. Procedure ( 200a . 200c ) according to one of claims 1 to 4, wherein in the coating the sacrificial material ( 202o ) in several separate areas ( 204 ) of the layer ( 202 ) and between these and / or over this the target material ( 202t ) is arranged. Procedure ( 200a . 200c ) according to one of claims 1 to 5, wherein the removal of the sacrificial material ( 202o ) is carried out by this is at least partially converted into a gaseous state of aggregation. Procedure ( 200a . 200c ) according to one of claims 1 to 6, wherein the removal of the sacrificial material ( 202o ) by means of irradiation ( 402 ) he follows. Procedure ( 200a . 200c ) according to one of claims 1 to 7, wherein the solid particles ( 104 ) in a vacuum over the substrate ( 102 ) to be ordered. Procedure ( 200a . 200c ) according to one of claims 1 to 8, wherein the sacrificial material ( 202o ) and / or the target material ( 202t ) by means of a printing process over the substrate ( 102 ) is arranged. Procedure ( 200a . 200c ) according to any one of claims 1 to 9, wherein a temperature at which the sacrificial material ( 202o ) is in a gaseous state, is less than a temperature at which the target material ( 202t ) merges into a gaseous state of aggregation. Procedure ( 200a . 200c ) according to one of claims 1 to 10, wherein the substrate ( 102 ) an electrode ( 1012 . 1022 . 2212 . 2222 ) has an energy storage. Procedure ( 200a . 200c ) according to one of claims 1 to 10, wherein the substrate ( 102 ) a solar cell ( 2220 ) having. Procedure ( 200a . 200c ) according to one of claims 1 to 10, the method further comprising: forming a capacitive area sensor by means of the target material ( 202t ). Procedure ( 200a . 200c ) to form a structured layer ( 202 ), the method comprising: coating the substrate ( 102 ) with a layer to be structured ( 202 ) containing a target material ( 202t ) and a sacrificial material ( 202o ), wherein during the coating the sacrificial material ( 202o ) in front of the target material ( 202t ) and / or simultaneously with it above the substrate ( 102 ) is arranged; • where the sacrificial material ( 202o ) at a lower temperature and / or pressure than the target material ( 202t ) merges into a gaseous state of aggregation; Thermal transfer of the sacrificial material ( 202o ) into the gaseous state of aggregation so that the multiple regions ( 204 ) of the layer ( 202 ). Procedure ( 200a . 200c ) to form a structured layer ( 202 ), the method comprising: • placing a substrate ( 102 ) in a vacuum chamber; Generating a stream of solid particles ( 104 ) from a source region in the direction of the substrate ( 102 ); and • arranging a mask ( 502 . 902 ) between the substrate ( 102 ) and the source area, where the mask ( 502 . 902 ) has one or more openings. Solid particle emission device for coating a substrate ( 102 ), wherein the solid particle emission device comprises: 106 ), which has an area for receiving solid particles ( 104 ) having; A positioning device for positioning a substrate ( 102 ) with a substrate surface of the substrate ( 102 ) in the direction of the area; At least one electron source ( 112 ) for introducing electrons into the solid particles ( 104 ); • a controller ( 108 ) arranged to control an electrostatic charge of the solid particles ( 104 ) such that a force caused by the electrostatic charge the solid particles ( 104 ) and towards the substrate surface of the substrate ( 102 ) accelerates to coat the substrate surface with at least a portion of the separated solid particles ( 104 ); and • a mask ( 502 ), which between the positioning device and the container ( 106 ) is arranged. Coating arrangement ( 1300a . 1300b ) for coating a substrate ( 102 ), the coating arrangement comprising: a vacuum chamber in which a coating area ( 306b ) and a structuring area ( 308b ) is arranged; A solid particle emission device for emitting solid particles ( 104 ) in the coating area ( 306b ); A positioning device ( 518 . 508 . 502a . 502b ) for transporting a substrate ( 102 ) between the coating area ( 306b ) and the structuring area ( 308b ); A thermal structuring device ( 308 ) for removing a sacrificial material ( 202o ) from the substrate ( 102 ) in the structuring area.

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