WO2018024604A1

WO2018024604A1 - Method of forming a structured layer

Info

Publication number: WO2018024604A1
Application number: PCT/EP2017/069027
Authority: WO
Inventors: Maik Vieluf
Original assignee: Von Ardenne Gmbh
Priority date: 2016-08-01
Filing date: 2017-07-27
Publication date: 2018-02-08
Also published as: DE102016114197A1

Abstract

In various embodiments, a method of forming a structured layer (202) on a substrate (102) may comprise the following: coating the substrate (102) with a layer (202) to be structured that has a target material (202t) and a sacrificial material (202o), where, in the course of coating, the sacrificial material (202o) is disposed in a plurality of mutually separate regions of the layer (202) and the target material (202t) is disposed between them and/or over them, so that the sacrificial material (202o) is embedded into the target material (202t) and/or between the target material (202t) and the substrate (102); where the disposing of the sacrificial material (202o) and/or of the target material (202t) comprises disposing a plurality of particulate solids (104) over the substrate (102), where the plurality of particulate solids disposed over the substrate come from a particle stream; removing the sacrificial material (202o), so that the plurality of regions of the layer (202) are opened.

Description

description

Method for forming a structured layer The invention relates to a method for forming a structured layer.

In general, a workpiece (e.g., a substrate) may be coated to functionalize it, i. to change its electrical, chemical or mechanical properties. For example, the substrate can provide an electrically conductive, mechanically stable and / or economically favorable framework which is functionalized by means of a coating. For the production of functional components, for example, the mechanical and / or electrical properties of the substrate can be combined with the functional properties of the layer in order to provide high-performance components cost-effectively. In general, it is thus possible, for example, to increase the energy density of energy stores by increasing their electrode energy content or by increasing the surface area of the electrodes. In the field of energy storage, such as accumulators, solid-state energy storage (also known as the all-solid-state approach) theoretical considerations, an improvement in energy density, which is practically not yet achieved for various reasons. At the same time, the general functioning of the energy store or its fast charging and discharging capacity would become more and more important as the energy density increases.

In general, the usable electrode energy content of solid state energy storage devices can be increased by the highest possible specific surface area of the electrodes. This can be clearly achieved by structuring the functional layer and / or this from a porous layer

Material is produced. For example, the usable electrode energy content of solid-state energy storage devices can be increased by a three-dimensional structuring of high-capacitance and therefore thick electrodes. Conventionally, the three-dimensional patterning of the electrodes by means of a sequential and dry layer structure by additive and subtractive methods and the improvement of the solid ion conductors used, which are adapted to the processes carried out. However, porous layers, ie layers with an already high specific surface, can be structured only with great effort. For example, liquid etchants penetrate the pores of a layer and thus act in an uncontrolled manner, including those areas which are to remain. Therefore, the full potential of patterning a porous layer can rarely be exploited. In other areas, such as the touch-sensitive screens, structured layers are needed. Conventional processes are commonly used for patterning, eg, plasma etching, wet chemical etching, ion implantation, laser patterning, electron beam patterning, photolithography, printing, nanolithography. In some cases, these processes are unsuitable for structuring the desired material. Other processes have several sequential steps, slowing down their use and thus reducing their efficiency. For example, sequential ablation steps are used to perform

Pulse laser process to leave bridges or structures. These subtraction steps enable a large amount of material to be removed precisely with relatively little energy input. For this, however, a high cost often has to be taken into account, which reduces their profitability.

In general, for the production of energy storage there is a great need for economically feasible processes in order to be able to produce and offer the energy stores in a clearly more favorable manner and / or to better couple the active material to the current collector, which improves the efficiency.

According to various embodiments, a method for forming a structured layer is provided, which reduces the expense, increases the cost and / or can be done in a continuous system, so that the production costs can be reduced and the production speed can be increased. The method makes it possible to minimize the chemical stress which acts on the layer to be structured, so that their

Functionality is impaired as little as possible. Thus, a wide variety of different material classes can be structured, eg chemically and / or mechanically sensitive materials, such as organic materials. According to various embodiments, the method enables to structure materials which have a high specific surface area and are therefore unsuitable for most conventional patterning processes, such as porous materials. The process makes it possible to further increase the specific surface area by means of structuring, without impairing or uncontrollably removing the porous materials. Thus, a wide variety of different material classes can be structured, for example, chemically and / or mechanically sensitive materials, such as an active material or an electrolyte. According to various embodiments, a method of forming a structured active material layer is provided. The active material layer can be used, for example, in energy stores, so that their production can be cheaper and less time consuming.

According to various embodiments, a method of forming a patterned sensor layer is provided. The sensor layer can be used, for example, in a sensor, e.g. be used a capacitive surface sensor, so that its production can be cheaper and cheaper and takes less time.

According to various embodiments, a method for forming a patterned layer on a substrate may include: coating the substrate with a layer to be patterned comprising a target material and a sacrificial material, wherein upon coating the sacrificial material over and / or simultaneously with the target material the substrate is arranged; wherein arranging the sacrificial material and / or the target material comprises disposing solid particles over the substrate (e.g., in multiple regions of the layer to be patterned); and removing the sacrificial material so that multiple areas of the layer are opened (also referred to as subtraction lithography). According to various embodiments, the sacrificial material may be disposed in the plurality of regions of the layer to be patterned, e.g. in the form of solid particles.

According to various embodiments, a method of forming a patterned layer may include: coating the substrate with a layer to be patterned comprising a target material and a sacrificial material, wherein in the coating

Sacrificial material is placed in front of and / or simultaneously with the target material over the substrate; wherein the sacrificial material changes to a gaseous state of aggregation at a lower temperature and / or pressure than the target material (i.e., the sacrificial material has a lower temperature and / or pressure than the target material at which it changes to a gaseous state); thermal transfer of the

Sacrificial material into the gaseous state of aggregation so that multiple areas (e.g., the multiple areas) of the layer are opened.

According to various embodiments, the thermal transfer of the sacrificial material to the gaseous aggregate state may be by means of (eg, pulsed) irradiation of the sacrificial material and the target material. According to various embodiments, the sacrificial material may include a mask (also referred to as a mask)

Form a sacrificial mask) over the substrate or at least be part of it, wherein the mask has a continuous opening through which the target material passes through or at least into it.

According to various embodiments, a method of forming a patterned layer within a vacuum chamber may include: arranging and / or transporting a substrate in the vacuum chamber; Generating a stream of solid particles from a source region toward the substrate; and disposing a mask between the substrate and the source region, the mask having one or more (e.g., disjoint) openings.

According to various embodiments, the substrate may be coated through the mask. Optionally, the mask may be or may be used to coat an additional substrate (also referred to in this case as an exchange mask or reusable mask). Alternatively, the mask for patterning the coating (which may include or be formed from the layer to be patterned) may be removed (also referred to as sacrificial mask in the case). The replacement mask may be located at a distance from the substrate. The sacrificial mask may be part of the coating. According to various embodiments, a method of forming a patterned layer within a vacuum chamber in which a solid particle emission device is disposed may include: disposing a substrate in the vacuum chamber; Disposing a mask between the substrate and the solid particle emission device, the mask having one or more openings; and emitting solid particles by the solid particle emission device toward the substrate.

According to various embodiments, the method may further include: generating and / or maintaining an electric field between the substrate and the mask

(Exchange mask) and / or between the solid particle emission device and the mask for guiding the solid particles. For example, the electric field may enable electrophoresis, for example a drift of the electrons in a certain direction. For example, the solid particles can be conducted by means of the electric field (eg through the several openings). Wherein the solid particles emitted by the solid particle emitting device toward the substrate include or are formed of a target material. According to various embodiments, the method may further comprise: coating the substrate with the solid particles through the mask.

According to various embodiments, the mask may comprise a plurality of solid particles which may or may be disposed over the substrate.

According to various embodiments, the solid particles of the mask may include or be formed from a sacrificial material (also referred to as a sacrificial mask). According to various embodiments, the target material may have a larger particle density than the sacrificial material and / or as the substrate.

According to various embodiments, the sacrificial material may have a larger particle density than the target material and / or as the substrate.

According to various embodiments, the sacrificial material can be removed by at least partially converting it to a gaseous state, e.g. by at least partially vaporizing and / or sublimating it. According to various embodiments, during coating, the sacrificial material can be arranged in a plurality of mutually separated regions of the layer and the target material can be arranged between and / or above it (ie, at least partially covering it) so that, for example, the sacrificial material is embedded in the target material and / or is disposed between the target material and the substrate.

According to various embodiments, the transfer may be by means of (e.g., pulsed) irradiation.

According to various embodiments, the (e.g., pulsed) irradiation may occur on both sides of the substrate.

According to various embodiments, the (eg pulsed) irradiation may be done in a vacuum. According to various embodiments, a porosity of the target material may be greater than a porosity of the substrate. According to various embodiments, the solid particles may be placed in a vacuum over the substrate.

According to various embodiments, the solid particles that are placed over the substrate may be from a particle stream (e.g., in a vacuum).

According to various embodiments, the solid particles may be separated by means of a

Solid particulate emission and / or placed in a vacuum over the substrate. According to various embodiments, the solid particle emission by means of a

Electrophoresis done.

According to various embodiments, the solid particle emission may occur in a vacuum.

According to various embodiments, the sacrificial material and / or the target material may be disposed over the substrate by a printing process (i.e., by printing).

According to various embodiments, the solid particles comprising or formed from the sacrificial material may be larger than the solid particles comprising or formed from the target material.

According to various embodiments, a temperature at which the sacrificial material changes to a gaseous state of aggregation may be less than a temperature at which the target material changes to a gaseous state.

According to various embodiments, the sacrificial material may be disposed between the target material and the substrate. According to various embodiments, the sacrificial material may be at least partially (i.

partially or completely) may or may not be covered with the target material.

According to various embodiments, the target material may include or be formed from a metal. According to various embodiments, the target material may comprise at least one of the following metals: aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), nickel (Ni), zirconium (Zr), niobium (Nb), molybdenum ( Mo), tantalum (Ta), gold (Au), silver (Ag), platinum (Pt), tungsten (W). According to various embodiments, the multiple regions of the layer that are opened may expose the substrate.

According to various embodiments, the target material may comprise or be formed from a metal, a semi-metal, a ceramic or an active material.

According to various embodiments, the substrate may be opaque or at least comprise or be formed from an opaque material. In other words, the substrate may be intransparent or at least have or be formed from an intransparent material. Alternatively, the substrate may be transparent or at least have or be formed from a transparent material. For example, a transparent substrate may be used to form a device that emits light through the substrate.

According to various embodiments, the substrate may be an electrode of a

Have energy storage or be formed from it.

According to various embodiments, the energy storage may be reversible (i.e.

be rechargeable). According to various embodiments, the energy store may include a capacitor (i.e.

Energy storage for storing electrical charge by means of an electric field) or an accumulator (i.e., an energy storage device for storing electrical charge by means of electrochemical conversion) or be formed therefrom. According to various embodiments, the substrate may include or be formed from a solar cell.

According to various embodiments, the substrate may include or be formed from a printed circuit board.

According to various embodiments, the method may further include: forming a capacitive area sensor using the target material. According to various embodiments, the method may further comprise: electrically contacting the patterned layer (eg, its target material). According to various embodiments, the method may further include forming a metallization that electrically contacts the target material (over the substrate), eg, a metallization having a contact pad.

According to various embodiments, the target material and / or the sacrificial material may or may not be formed from a liquid phase.

According to various embodiments, the target material and / or the sacrificial material may or may not be formed from a dispersion. According to various embodiments, the liquid phase forming may comprise solidifying it, e.g. by releasing a solvent therefrom (also referred to as dry) and / or converting it to a solid state (e.g., solidifying it). According to various embodiments, a method of forming a patterned layer may include: disposing a sacrificial layer over a substrate having a plurality of (singulated) segments; Depositing a layer to be patterned over the substrate such that its material is disposed at least between the plurality of segments;

Removing the plurality of segments to form openings in the layer to be patterned; wherein the sacrificial layer and / or the layer to be structured by means of a

Solid particle emission are formed.

According to various embodiments, the substrate may include or be formed from a polymer, e.g. a transparent polymer.

According to various embodiments, the sacrificial material may include or be formed from a polymer (e.g., an opaque polymer), e.g. different from that of the substrate.

According to various embodiments, the substrate may comprise at least one sheet-like carrier and / or a flexible carrier, eg a foil or a plate (eg a wafer). According to various embodiments, the substrate may be coated on both sides or be formed, for example, from one side (by turning the substrate) or from two opposite sides. According to various embodiments, the substrate may include or be formed from a laminate.

According to various embodiments, the substrate may include mica (eg, layered silicate comprising or formed therefrom), a ceramic (eg, a transparent ceramic such as glass), a semiconductor material (eg, silicon), and / or a metal (eg, aluminum, copper, and / or lithium ) or be formed therefrom.

According to various embodiments, the target material and / or the substrate may comprise or be formed from an electrically conductive material, e.g. a metal and / or a metallic alloy. For example, the substrate may include or be formed from an electrically conductive coating (e.g., a current collector layer).

Alternatively or additionally, the metal of the target material and / or the substrate may be in or coated with a ceramic (e.g., a nitride or carbide). For example, the target material and / or the substrate may include or be formed from a metal nitride (such as TiN, CrN) and / or a metal carbide (such as TiC, CrC). More generally, in addition to the metal, a nonmetal may or may not be incorporated into the target material and / or the substrate. For example, the target material may or may be chemically reacted, e.g. with a process atmosphere comprising carbon and / or nitrogen.

As the ceramic, according to various embodiments, an inorganic non-metallic material can be understood which can be used besides oxides (e.g., metal oxides) also for nitrides and / or carbides. In other words, an oxide, a carbide and / or a nitride may be a ceramic.

According to various embodiments, the target material and / or the substrate may be electrically conductive, that is, an electrical conductivity of greater than about 10 ⁶ S / m (Siemens per meter) have, for example, greater than about 2-10 ⁶ S / m, for example greater as about 5-10 ⁶ S / m, eg greater than about 10 ⁷ S / m, eg greater than about 2-10 ⁷ S / m, eg greater than about 5-10 ⁷ S / m, eg in a range of about 10 ⁷ S / m to about 10-10 ⁷ S / m. The target material and the substrate may differ from one another, for example in at least one of the following properties: their density, their porosity (if present), their

mechanical hardness, their mean particle density (if any), their mean density, their electrical conductivity; their gas permeability; their permittivity, their chemical

Composition or its chemical reactivity.

The target material and the sacrificial material may differ from each other, e.g. in at least one of the following properties: their density, their porosity (if present), their mechanical hardness, their layer thickness, their mean particle density (if any), their mean particle size (if any), their mean density, their electrical conductivity; their gas permeability; their permittivity, their chemical composition or their chemical reactivity.

According to various embodiments, the electrical conductivity of the target material may be less than the electrical conductivity of the substrate and / or both may have greater electrical conductivity than the sacrificial material. For example, the target material can be electrically insulating (ie, an electrical conductivity of less than about 10 ^-6 S / m) or more, for example when the target material comprises a ceramic or a polymer. Alternatively, the electrical conductivity of the target material may be greater than the electrical

Conductivity of the substrate and / or both may have greater electrical conductivity than the sacrificial material. For example, the substrate may be electrically insulating (ie, have an electrical conductivity of less than about 10 ⁶ S / m), eg, when the substrate comprises a ceramic or a polymer.

As used herein, a metal (also referred to as a metallic material) may comprise (or be formed of) at least one metallic element (i.e., one or more metallic elements), e.g. at least one element from the following group of elements: copper (Cu), iron (Fe), titanium (Ti), nickel (Ni), chromium (Cr), platinum (Pt), gold (Au), zinc (Zn), Magnesium (Mg), Aluminum (AI), Zirconium (Zr), Niobium (Nb), Tantalum (Ta), Molybdenum (Mo), Tungsten (W),

Vanadium (V), barium (Ba), indium (In), calcium (Ca), hafnium (Hf), samarium (Sm), silver (Ag), and / or lithium (Li). Optionally, a metal may be a metallic compound (e.g.

intermetallic compound or an alloy), or e.g. a compound of at least two metallic elements (e.g., the group of elements), e.g. a connection like bronze or brass. Alternatively or additionally, a metal may be a

A compound of at least one metallic element (eg from the group of elements) and at least one non-metallic element (eg carbon), eg a compound like steel. According to various embodiments, a metal may have a thermal conductivity greater than 10 W / (mK) (watts per Kelvin and meters), eg greater than 50 W / (mK). According to various embodiments, the polymer may comprise or be formed from a thermoset, a thermoplastic, and / or an elastomer.

According to various embodiments, the polymer may comprise or be formed from an organic polymer, e.g. a hydrocarbon. An organic polymer may denote a polymer which has carbon atoms in the main chain of the polymer or whose main chain is formed of a plurality of carbon atoms.

According to various embodiments, the polymer may include polyvinylchloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES), polytetrafluoroethylene (PTFE), cyclo-olefin copolymer (COC), cyclo- Olefin polymer (COC,

Trade name: ZEONOR), electrically conductive polymer and / or polyethylene naphthalate (PEN) or be formed therefrom.

According to various embodiments, the method may further comprise: forming an energy storage using the patterned layer, the target material, and / or the substrate.

According to various embodiments, the substrate for coating with the

Target material and / or arranged with the sacrificial material in a vacuum chamber and / or transported. For example, a printing (process printing), in which the coating (forming the first layer and / or forming the second layer) may be carried out in a range of about HO- ⁵ millibars (mbar) to about of up to 8 ^■ 10 ⁴ millibar is set and / or be regulated. For example, the process pressure can be set and / or regulated by means of a regulated and / or regulated gas inlet (eg with constant pumping power), eg by introducing a process gas.

According to various embodiments, the sacrificial material may be placed over the substrate prior to (e.g., spaced apart from) the target material. Then that can

Sacrificial material optionally be covered with the target material. Alternatively or additionally, the sacrificial material may be simultaneously disposed over the substrate to the target material. Then, the sacrificial material may optionally be disposed adjacent to the target material and / or partially exposed. According to various embodiments, during coating, the target material may remain uncovered by the sacrificial material. Alternatively or additionally, the target material may be exposed (eg, from the sacrificial material). According to various embodiments, the substrate may have a smaller transparency than the target material and / or as the sacrificial material. Alternatively or additionally, the target material may have a smaller transparency than the sacrificial material.

The transparency may be understood as a measure describing which portion of the incident light penetrates an area and / or a body (e.g., a layer and / or a substrate). The transparency may be influenced by the material of which the region and / or the body is formed, and / or by the way the light has to travel through the region and / or the body. The greater the thickness (e.g., thickness) of the region and / or body, the less light that can penetrate along the thickness. The light can be understood as the visible light, e.g. having a wavelength in a range of about 380 nm to about 780 nm. The transparency may be applied to the entirety of the incident light, e.g. averaged over the wavelengths of light. Alternatively or additionally, the transparency may refer to a particular wavelength in the range of about 380 nm to about 780 nm, e.g. to light having a wavelength of about 650 nm (red), a wavelength of about 520 nm (green), and / or a wavelength of about 470 nm (blue). The transparency can be understood as the reciprocal of the opacity. Transparent with respect to a body (e.g., a layer and / or a substrate) or region may be understood to transmit more than 75% of the light (e.g., visible light), e.g. more than about 90%, e.g. more than about 95%, e.g. more than about 99%.

According to various embodiments, the sacrificial material may have a larger size

Have absorption coefficients as the substrate and / or as the target material, e.g.

towards the irradiation. The absorption coefficient may describe the proportion of radiation used for irradiation which is absorbed (and / or converted into thermal energy).

According to various embodiments, the layer to be patterned or at least the target material may have a thickness (layer thickness) in a range of about 100 nm to about 1 μm, eg in a range of about 200 nm to about 500 nm. For example, the layer to be patterned or at least the target material comprise copper or be formed therefrom, for example having a thickness in a range of about 800 nm to about 1 μιπ Thus, for example, a sensor layer comprising the target material form.

According to various embodiments, placement of the target material may be by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), plasma spraying, or liquid phase deposition. The Flussigphasendeposition can be done, for example, when the sacrificial material in the form of

Solid particles is or will be provided. According to various embodiments, placement of the sacrificial material may be by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), or liquid phase deposition. Arranging the sacrificial material by plasma spraying may be more difficult due to the associated high temperatures than arranging the target material by means of plasma spraying. For example, placing the sacrificial material may be free of plasma spraying. The liquid phase deposition may be done, for example, when the target material is or will be provided in the form of solid particles.

According to various embodiments, the solid particles comprising the target material may be placed over the substrate after the solid particles comprising the sacrificial material, e.g. at a time interval from each other and / or by means of different processes.

According to various embodiments, a coating arrangement for coating a substrate may comprise: a container having a region (also referred to as source region) for receiving solid particles; a positioning device for positioning a substrate with a substrate surface of the substrate toward the region; at least one electron source for introducing electrons into the solid particles; a controller configured to control an electrostatic charge of the solid particles such that a force caused by the electrostatic charge separates the solid particles and accelerates toward the substrate surface of the substrate for coating the solid particles

Substrate surface with at least a portion of the separated solid particles; and a mask, which is arranged between the positioning device and the container and / or movably mounted.

According to various embodiments, a coating arrangement for coating a substrate may comprise: a vacuum chamber in which a coating area and a structuring area is arranged; a solid particle emission device for emitting solid particles in the coating region; a positioning device for transporting a substrate between the coating area and the

Structuring area; a thermal structuring device for removing a

Sacrificial material from the substrate (e.g., by thermally transferring the sacrificial material to a gaseous state of aggregation) in the patterning region.

The thermal structuring device may comprise an irradiation device for emitting radiation into the structuring region.

According to various embodiments, the target material may have greater chemical activity than the substrate and / or as the sacrificial material.

As a chemical activity, the ability (vividly the endeavor) of a material can be understood to react with other materials. The chemical activity can represent the rate at which the chemical reaction occurs. The greater the chemical activity of a material, the faster the material can chemically react and / or be consumed by the chemical reaction. The chemical activity may refer to a reference reactant, e.g. on oxygen and / or an ionic conductor (e.g., an electrolyte).

According to various embodiments, the target material may have a greater electrical conductivity than the substrate and / or as the sacrificial material. This makes it possible, for example, to form electrically conductive webs or printed conductors. According to various embodiments, the structure of the layer may be determined by means of a

Subtraction lithography, e.g. by means of irradiation.

The irradiation may have a whole-area irradiation, e.g. the sacrificial material and the target material. For example, the sacrificial material may be irradiated at approximately the same energy density or become as the target material. Alternatively or additionally, in the

Sacrificial material about the same energy density or be registered as in the

Target material.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it FIG. 1A and FIG. 1B each show a solid particle emission in a method according to FIG

various embodiments; FIG. 2A, FIG. 2B and FIG. 2C each show a method for structuring a layer according to FIG

various embodiments;

FIG. 3A, FIG. 3B and FIG. 3C each show a method for structuring a layer according to FIG

various embodiments;

4A, 4B and 4C each show a method for structuring a layer according to FIG

various embodiments;

FIG. 5A, FIG. 5B and FIG. 5C each show a method for structuring a layer according to FIG

various embodiments;

FIGS. 6A and 6B each show a method for structuring a layer according to various

Embodiments; FIGS. 7A and 7B each illustrate a method of patterning a layer according to various

Embodiments;

FIGS. 8A and 8B each show a method for structuring a layer according to various

Embodiments;

FIGS. 9A and 9B each illustrate a method of patterning a layer according to various

Embodiments;

FIG. 10A and FIG. 10B each show a method for structuring a layer according to FIG

various embodiments;

11A and 11B each show a method for structuring a layer according to FIG

various embodiments; 12A, 12B, 12C and 12D each show a method of patterning a layer according to various embodiments; 13A and 13B each show a coating arrangement according to various

Embodiments;

FIG. 14A and FIG. 14B each show an energy store according to various embodiments;

FIG. 15A and FIG. 15B each show a method for structuring a layer according to FIG

various embodiments;

FIGS. 16A and 16B each show a method for structuring a layer according to FIG

various embodiments;

17A and 17B each show a method for structuring a layer according to FIG

various embodiments; FIGS. 18A and 18B each show a method for structuring a layer according to FIG

various embodiments;

FIG. 19 shows a mask for structuring a layer according to various embodiments; FIGS. 20A and 20B each show a method for structuring a layer according to FIG

various embodiments;

21A, 21B and 21C each show a method for structuring a layer according to various embodiments; and

FIGS. 22A, 22B and 22C each illustrate a method of patterning a layer according to various embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof and in which is by way of illustration specific

Embodiments are shown in which the invention can be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It will be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention departing. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

In the context of this description, the terms "connected", "connected" and

"coupled" is used to describe both a direct and indirect connection (e.g., resistive and / or electrically conductive, e.g., an electrically conductive connection), direct or indirect connection, and direct or indirect coupling.

The term "over" with respect to deposited material or a layer thereof formed "over" a side or surface may be understood in accordance with various embodiments in that the deposited material or layer "directly on, eg in direct (e.g. The term "over" with respect to a deposited material or layer formed "over" a side or surface may be understood in accordance with various embodiments to be, for example, physical the deposited material or layer is formed "indirectly on" said side or surface with one or more additional layers disposed between said side or surface and the deposited material.

The term "lateral" or "lateral" with respect to the "lateral" or "lateral" extent of a structure (or a substrate, a wafer or a carrier) or "laterally" adjacent, according to various embodiments used to be one

To denote expansion or a positional relationship along a surface of a substrate, a wafer, or a carrier. That is, a surface of a substrate (eg, a surface of a support or a surface of a wafer) may serve as a reference, commonly referred to as the main processing surface of the substrate (or the main processing surface of the carrier or wafer). Further, the term "width" used with respect to a "width" of a structure (or a structural element) may be used herein to denote the lateral (or lateral) extent of a structure.

Further, the term "height" used in relation to a height of a structure (or a structural element) may be used herein to extend a structure along a direction perpendicular to the surface of a substrate (eg, perpendicular to the main processing area of a substrate). to designate, ie a vertical extension. The term "thickness" used with respect to a "thickness" of a layer can be used herein to refer to the spatial Extension of the layer perpendicular to the surface of the support (material) on which the layer is deposited, ie a vertical extension. When the surface of the carrier is parallel to the surface of the substrate (for example, to the

Main working surface), the thickness of the layer applied to the support may be equal to the height of the layer. Further, a "vertical" structure may denote a structure extending in a direction perpendicular to the lateral direction (e.g., perpendicular to the

Main processing surface of a substrate), and a "vertical" extent may be an extension along a direction perpendicular to a lateral direction (eg, an extension perpendicular to the main processing area of a substrate).

In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

According to various embodiments, a method for producing a layer having a high specific surface area is provided. That according to different

Embodiments provided method increases the economics of the production of a device made therewith.

According to various embodiments, a method of patterning a thin porous layer is provided. The layer may have a thickness (vertical extension) in a range from about 1 nm (nanometers) to about 10 μm (microns), e.g. in a range of about 10 nm to about 1 μιπ

According to various embodiments, it has been recognized that for the production of a

Energy storage, such as a lithium-ion battery, for example, a solid energy storage, there is a great need for economic feasible processes to the active materials on the current collector (for example, comprising an aluminum foil or copper foil, for example with a thickness in a range of about 4 μιη to about 20 μιη) so that they better connect to the current collector, so as to achieve a performance gain.

According to various embodiments, a method is provided which makes it possible to increase surfaces or interfaces for the lithium intercalation and / or to shorten the path that the electrons take through the structured layer. According to various embodiments, the method for patterning anode or

Use cathode materials. FIGS. 1A and 1B each illustrate a solid particle emission in a method according to various embodiments in a schematic side view or

Cross-sectional view 100a and a schematic plan view 100b. The solid particle emission (also referred to as Fast Particle Deposition, "FPD" for short) may include: positioning a substrate 102 to be coated in a vacuum and in the direction (opposite direction 105) of a region 104q (also referred to as source region 104q or solid particle source region 104q ), in which solid particles 104 are arranged, with which the substrate 102 is to be coated.

The solid particle emission may further include: introducing electrons into the

Solid particles 104 for electrostatic charging of the solid particles 104 such that a force caused by the electrostatic charge the solid particles 104 separated from each other and accelerated in the direction 105 of the substrate 102 for coating the substrate 102 with at least a portion of the separated solid particles 104. The direction of 105th of the substrate 102 accelerated solid particles 104 may form a particle stream 1802.

The solid particles 104 may or may not be arranged as loose fill (also referred to as agglomerate) in the source region 104q.

For example, the solid particles 104 can be arranged in a particle container 106, which has an at least partially electrically conductive wall. Optionally, the introduction of the electrons into the solid particles 104 can take place indirectly via the container wall. In other words, the introduction of electrons into the solid particles 104 can take place from the container wall. This can be achieved, for example, that the electrons are distributed by means of the container wall (shown as arrows), which reduces an electrical current density, which is caused by the introduction of electrons into the solid particles 104. Thus, visually, local heating of the solid particles 104 can be reduced and / or prevented, e.g. a local meltdown or co-sintering effected thereby.

In the context of this description, the solid particles 104 may be understood as particles (illustrative granules) having or being formed from a solid, i. matter in a solid aggregate state (where the matter may have multiple atoms and / or molecules). The solid particles 104 may have an average extent (illustrative

Particle size) greater than 5 nm, for example, greater than 0.1 μιη, for example, less than 1 mm, for example less than 500 μιη, for example in a range of about 10 nm to about 500 μιη, for example in a range of about 100 nm about 100 μιη, for example in a range of about 200 nm to about 10 μιη, or in a range of about 0.1 μιη to about 1 mm, for example in a range of about 1 μιη to about 500 μιη, for example in a range of about 10 μιη to about 250 μηι. The solid particles 104 can illustratively form a granulate or a powder, which can be or can be arranged at least in the source region 104q. The expansion of the solid particles 104 may be their average extent, for example averaged over all solid particles 104 and / or averaged individually for each solid particle 104. The average extent of a single solid particle 104 may illustratively correspond to a diameter of a sphere having the volume of the solid particle 104. Optionally, the solid particle emission may include: removing electrons from the

Solid particles 104 during the introduction of electrons into the solid particles 104, wherein the removal is controlled or regulated, e.g. by means of a controller 108. Thus, an electric potential of the solid particles 104, which is caused by the introduction of electrons, can be controlled or regulated. Clearly, a portion of the electrical charge, which is introduced by the introduction of electrons into the solid particles 104 by means of the discharge of electrons are removed again.

According to various embodiments, a controller 108 may include a forward-looking control path, and thus illustratively implement a scheduler that converts an input into an output. The tax route can also be part of a

Be a control loop, so that a scheme is implemented. The control has, in contrast to the pure forward control on a continuous influence of the output variable on the input variable, which is effected by the control loop (feedback). According to

According to various embodiments, a control may be used instead of the control.

According to various embodiments, the introduction may be controlled or regulated, e.g. by the controller 108. Thus, an electric potential of the solid particles 104 caused by the introduction of electrons can be controlled. Optionally, the solid particulate emission may further include: evaporating a

Coating material (also referred to as co-coating) in the direction of the substrate 102 for coating the substrate 102 with at least a portion of the coating material. When a co-coating is used, the solid particles 104 may include or be formed from the sacrificial material, and the coating material may include or be formed from the target material. For example, coating the substrate 102 with at least the portion of the

Coating material and the coating of the substrate 102 with at least the part of the separated solid particles 104 overlap each other temporally and / or spatially.

Alternatively or additionally, the coating of the substrate 102 with at least the part of the coating material after the coating of the substrate 102 with at least the part of the separated solid particles 104 may take place.

Alternatively, the solid particles 104 may include or be formed from the target material, e.g. an accumulator-active material, a solar cell active material, a catalyst material and / or a solid electrolyte. Then the substrate may already be coated with the sacrificial material. For example, the coating of the substrate 102 with the sacrificial material can be done by means of a preceding solid particle emission, as described in more detail below. Alternatively, or additionally, the coating of the substrate 102 with the sacrificial material may be by means of a preceding liquid phase deposition (i.e., from a liquid phase and prior to the solid particle emission), as described in more detail below.

Optionally, the solid particulate emission may further comprise controlling and / or regulating (eg, by a controller 108) an electrical potential difference between the substrate 102 and the solid particles 104. When the solid particles 104 are placed in a container 106, the electric potential of the solid particles may be 104 the electric potential of the

Container 106 correspond. For example, an electrical potential of the substrate 102 and / or an electrical potential of the solid particles 104 can be controlled and / or regulated. For example, an electrical voltage applied to the substrate 102 (i.e., an electrical potential difference to an electrical reference potential) may be controlled or regulated.

Alternatively or additionally, an electrical voltage applied to the solid particles 104 (i.e., an electrical potential difference to an electrical reference potential) may be controlled or regulated. The electrical reference potential may be provided by, for example, a vacuum chamber. Alternatively, the electrical potential difference between substrate 102 and solid particles 104 may also be controlled or controlled in a floating manner (i.e.

independent of the electrical reference potential).

If a mask (see FIG. 6A) is used, the solid particle emission may optionally include: controlling and / or regulating (eg by means of a controller 108) an electrical potential difference between the mask and the substrate 102 and / or the solid particles 104 An electrical potential of the mask can be controlled and / or regulated. For example, an electrical voltage applied to the mask (ie, an electrical potential difference to an electrical reference potential) may be controlled or regulated become. Alternatively or additionally, an electrical voltage applied to the solid particles 104 and / or to the substrate 102 (ie, an electrical potential difference to a

electrical reference potential) are controlled or regulated. Alternatively, the electrical potential difference between the mask and the substrate 102 and / or the solid particles 104 may also be controlled in a floating manner (i.e., independent of the electrical

Reference potential). By means of the electrical potential of the mask, electrophoresis can be controlled and / or regulated.

The electrophoresis may denote the process of moving (flowing) the solid particles 104 through the electric field.

Optionally, the solid particle emission may further include moving the substrate 102 while being coated with at least the portion of the separated solid particles 104. Alternatively, or additionally, the solid particle emission may include moving the mask (when used) while the substrate 102 is at least part of the separated ones

Solid particles 104 is coated.

According to various embodiments, the substrate 102 may be an electrode of a

Accumulator, a capacitor, a fuel cell or a solar cell or be formed from it.

For example, the target material may comprise or be formed from an electrolyte of the rechargeable battery or a fuel cell. The electrolyte may for example comprise or be formed from a solid electrolyte.

Alternatively, the substrate 102 may include, for example, a separator of an accumulator or a fuel cell.

According to various embodiments, a device 152 for emitting

Solid particles 104 (also referred to as solid particle emission device 152) include an electron beam gun 112 and a portion 104q for receiving the solid particles 104. The introduction of the electrons can be effected by means of the electron beam gun 112, by means of which an electron beam 112 e is emitted in the direction of the solid particles 104. Furthermore, the solid particle emission device 152 may include the controller 108, which may include introducing the electrons (by means of the electron beam gun 112) and / or discharging the electrons

Electrons controls. Optionally, the solid particle emission device 152 may include a container 106 having the region 104q. FIGS. 2A, 2B and 2C each illustrate a method for structuring a layer according to various embodiments in a schematic side view or

Cross-sectional view in 200a, 200c (viewed along a Hauptprozessierseite 102t of the substrate 102) and a plan view in 200b (facing the Hauptprozessierseite 102t of the substrate 102).

According to various embodiments, the method in 200a, 200b may include:

Coating the substrate 102 with a layer 202 to be patterned.

The layer 202 to be patterned may include or be formed from a target material 202t and a sacrificial material 202o. The coating may be carried out in such a way that the sacrificial material 202o is arranged temporally in front of the target material 202t and / or simultaneously with it above the substrate 102.

The coating can optionally take place in such a way that the sacrificial material 202o is or will be arranged in a plurality of mutually separated regions 204 of the layer 202 to be structured. In other words, the layer 202 to be patterned may include a plurality of segments 204 (also referred to as sacrificial segments 204) that comprise or are formed from the sacrificial material 202o.

Adjacent portions of the plurality of separated regions 204 may be spaced apart a distance 204d. Each region of the plurality of separated regions 204 may include an extension 204b (lateral extension 204b). According to various embodiments, the distance 204d of adjacent regions of the plurality of separated regions 204 may be greater than their extent 204b (along a vertical direction 101, 103). A lateral extent can be understood as an extension along a direction that runs along one or the main processing side 102t, 102b.

Optionally, the plurality of separated regions 204 and the sacrificial material 202o may be exposed. By way of example, a thickness 202p of the plurality of mutually separated regions 204 or of the sacrificial material 202o may be equal to or greater than an average thickness 202d of the layer 202 to be structured (mean layer thickness 202d) and / or of the target material 202t. For example, the multiple separated regions 204 and the sacrificial material 202o may protrude from the layer 202 to be patterned. A thickness can in the context of present description as a vertical extent, ie in the direction perpendicular to a

Surface of the substrate 102 (on a main processing side 102t).

According to various embodiments, the average thickness 202d of the layer 202 to be patterned may be in a range from about 10 μιη to about 20 μιη, e.g. when the target material 202t has an active material. According to various other embodiments, the average thickness 202d of the layer 202 to be patterned may range from about 100 μιη to about 200 μιη, e.g. when the target material 202t has an electrolyte (e.g., a liquid electrolyte). According to various other embodiments, the average thickness 202d of the layer 202 to be patterned may be in a range from about 10 μιη to about 200 μιη, e.g. when the target material 202t comprises a metal (e.g., for forming electrically conductive lands or traces).

According to various embodiments, the coating may be performed such that the target material 202t is disposed at least between the plurality of separated regions 204. For example, sacrificial material 202o may or may not be embedded in target material 202t, as described in more detail below.

According to various embodiments, the layer 202 to be patterned may include

Solid particles 104 may be formed or be. For example, the solid particles 104 may include or be formed from the target material 202t. Alternatively or additionally, the solid particles 104 may include or be formed from the sacrificial material 202o.

At least a portion of the solid particles 104 (i.e., some or all) may be separated by means of a

Solid particulate emission via (along the processing direction 105) to the substrate 102 or be arranged. Alternatively or additionally, at least a portion of the solid particles 104 (i.e., some or all) may or may not be disposed above the substrate 102 by means of a liquid phase, e.g. from a dispersion and / or suspension, as will be described in more detail below. The solid particles 104 may be, for example, colloids of the liquid phase.

In 200c, the method may include removing the sacrificial material 202o from the to

patterning layer 202 so that a patterned layer 202 is formed by opening the plurality of regions 204 of the layer 202. Optionally, the method in 200c may further include: coating the patterned layer 202 (after removing the sacrificial material 202o). 3A, 3B and 3C each illustrate a method for patterning a layer according to various embodiments in a schematic side view or

Cross-sectional view in 300a, 300c (viewed along a Hauptprozessierseite 102t of the substrate 102) and a plan view in 300b (facing the main processing 102t of the substrate 102).

According to various embodiments, the method in 300a, 300b may include:

Coating the substrate 102 with a layer 202 to be patterned, e.g. similar to the previous description.

According to various embodiments, the coating may be performed such that the target material 202t is disposed between the plurality of separated regions 204 and over the plurality of separated regions 204. In other words, the plurality of separated regions 204 and the sacrificial material 202o may be buried, e.g. partially covered by the target material 202t target material 202t. For example, the sacrificial material 202o may or may not be embedded in the target material 202t.

The thickness 202p of the plurality of separated regions 204 and the sacrificial material 202o may be greater than approximately 75% of the mean thickness 202d of the layer 202 to be patterned and / or the target material 202t and / or less than the average thickness 202d of the

patterning layer 202 and / or the target material 202t. For example, a thickness 202d of the target material 202t, which is arranged above the plurality of mutually separated regions 204 or over the sacrificial material 202o, may be smaller than the thickness 202p of the plurality of mutually separated regions 204 and the sacrificial material 202o, respectively.

In 300c, the method may include removing the sacrificial material 202o from the to

patterning layer 202 so that the multiple regions 204 of the layer 202 are opened. The removal of the sacrificial material 202o may be through the target material 202t. For this purpose, the sacrificial material 202o may, for example, be converted into a gaseous state of aggregation, or as will be described in more detail below.

When removing the sacrificial material 202o, optionally a portion of the target material 202t may be removed or at least deformed. This can increase the surface area of the patterned layer 202.

4A, 4B and 4C each illustrate a method of patterning a layer according to various embodiments in a schematic side view or Cross-sectional view in 400a, 400c (viewed along a Hauptprozessierseite 102t of the substrate 102) and a plan view in 400b (facing the Hauptprozessierseite 102t of the substrate 102). According to various embodiments, the method in 400a, 400b may include:

According to various embodiments, the coating may be performed such that the target material 202t is arranged between the plurality of mutually separated regions 204 and optionally over the plurality of mutually separated regions 204, as described above.

The sacrificial material 202o may have a first temperature (also referred to as a first transition temperature) and / or a first pressure (also referred to as a first transition pressure) in which the latter changes into a gaseous state of aggregation. Analogously, the target material 202t may have a second temperature (also referred to as a second transition temperature) and / or a second pressure (also referred to as a second transition pressure) in which the latter changes into a gaseous state of aggregation.

According to various embodiments, the sacrificial material 202o may be a first

Transition temperature of less than about 500 ° C, e.g. less than about 400 ° C, e.g. less than about 300 ° C, e.g. less than about 200 ° C, e.g. less than about 100 ° C.

In general, the transition temperature may be a function of the external pressure such that the phase space of a material has a plurality of temperature-pressure tuples at which a material transitions to the gaseous state (eg, sublimates or boils), ie, the pressure of the Transient pressure is and where the temperature is the transition temperature. Each of the temperature-pressure tuples can be uniquely characterized by the transition pressure or transition temperature. For example, at a constant temperature, the pressure can be reduced, and when the transition pressure is exceeded, the material changes to the gaseous state. Alternatively or additionally, the temperature can be increased at a constant pressure, wherein the material passes into the gaseous state when the transition temperature is exceeded. According to various embodiments, the first transition temperature may be less than the second transition temperature, eg, less than about 75% of the second transition temperature, eg, less than about 50% of the second transition temperature, eg, less than about 25% of the second transition temperature, eg, less than about 10%. the second transition temperature, eg, less than about 5% of the second transition temperature. Alternatively or additionally, the second transitional pressure may be less than the first transitional pressure, eg, less than about 75% of the first transitional pressure, eg, less than about 50% of the first transitional pressure, eg, less than about 25% of the first transitional pressure, eg, less than about 10%. of the first

Transition pressure, e.g. less than about 5% of the first transition pressure. Thus, the removal of the sacrificial material 202o may be facilitated or, e.g. when this is converted into a gaseous state of aggregation.

In 400c, the process may include removing sacrificial material 202o

patterning layer 202 to be irradiated 402, e.g. pulsed. The irradiation 402 may be performed such that the layer 202 to be patterned is brought to or above the first transition temperature. In this way, a transfer 432 of the sacrificial material 202o into the gaseous state can take place. For example, the sacrificial material 202o may vaporize or sublime.

According to various embodiments, the pulsed irradiation 402 of the

Main processing side 102t (also referred to as first main processing side 102t). Alternatively or additionally, the pulsed irradiation 402 may take place from a main processing side 102b (also referred to as a second main processing side 102b) opposite the first main processing side 102t. The irradiation of the second main processing side 102b may occur when the substrate 102 is transparent and also when the substrate 102 is opaque. An opaque substrate 102 can serve as a radiation absorber, so that even a transparent sacrificial material 202o can be converted into the gaseous state of aggregation. A transparent substrate may be needed to fabricate an opto-electronic device, such as a display.

Optionally, the irradiation 402 may be pulsed.

According to various embodiments, the irradiation 402 may be performed using at least one pulsed irradiation source, e.g. at least one light source (e.g.

at least one laser, at least one lamp, at least one flash lamp or at least one light-emitting diode) or multiple light sources, wherein the layer can be pulsed by means of the radiation. According to various embodiments, the irradiation 402 may be performed using at least one (eg pulsed or continuously operated) electron beam source, eg in the form of a line source, wherein the layer may be pulsed by the radiation. For example, the electron beam source may provide an explicitly tuned energy density. The irradiation by means of the electron beam source can, for example, take place independently of the optical properties (eg of the opacity) of the sacrificial material or provide suitable irradiation (eg suitable penetration depth) irrespective of the optical properties (eg of the opacity) of the sacrificial material. For example, the pulsed irradiation 402 can take place with a pulse duration of up to 10 ms each. For example, the pulse duration of the pulsed radiation for irradiation 402 may be shorter than 1 ms, for example shorter than 0.1 ms or shorter than 100 s. Alternatively, the pulsed radiation for irradiation may have a duration (pulse duration) in a range of about 10 s to about 10 ms, for example in a range of about 100 s to about 1 ms, for example in a range of about 200 s to about 500 s ,

According to various embodiments, generating the pulsed radiation for irradiation 402 at a repetition rate greater than 0.1 Hz, e.g. with more than 1 Hz.

For example, generating the pulsed radiation for irradiation 402 may be at a repetition rate in a range between about 10 Hz and about 0.1 Hz.

Alternatively, the irradiation 402 may be continuous.

According to various embodiments, the irradiation 402 may be performed using at least one continuously operated irradiation source, e.g. at least one light source (for example at least one laser, at least one lamp, at least one light-emitting diode) or a plurality of light sources, wherein the layer can be exposed continuously by means of the radiation. Continuous irradiation 402 may alternatively or additionally be done by means of a furnace. The furnace can be set up in a thermal equilibrium thermal radiation

(To emit heat radiation). The thermal radiation can be in thermal equilibrium with the matter at the place of its formation.

According to various embodiments, as an alternative or in addition to the irradiation 402, heating of the layer 202 to be patterned may be effected by induction. For this purpose, for example, an electrically conductive substrate 102 can be used, in which an electromagnetic alternating field is coupled. According to various embodiments, the properties (eg the wavelength or the kinetic energy) of the radiation 402 on the chemical composition and the properties (eg the layer thickness 202d or the absorption properties) of the layer 202 to be structured can be adapted such that the layer 202 to be patterned by means of the irradiation 402 can be heated and the layer 202 to be structured can be at least partially structurally changed. For example, the pulsed radiation 402 may be monochromatic or the spectral distribution according to a specification (eg, one within a certain one)

Frequency range, or wavelength range, e.g. of the visible wavelength range) can be adjusted by means of a suitable irradiation source. Optionally, the pulsed radiation 402 may be passed through a transparent substrate 102. For example, the radiation 402 may have a wavelength in a range of about 10 nm (nanometers) to about 10 mm (millimeters), e.g. in a range of about 100 nm to about 1 mm.

Optionally, an absorption layer may be disposed between the substrate 102 and the layer 202 to be patterned. The absorption layer can be a larger one

Have absorption coefficients against the irradiation 402 as the sacrificial material 202o and / or as the substrate 102 (e.g., when the substrate 102 is transparent). Alternatively or additionally, an absorption layer can optionally be arranged above the layer 202 to be structured. By means of the one or more absorption layers, improved radiation absorption can be achieved. If an opaque substrate 102 is used, an absorption layer between the layer 202 to be patterned and the substrate 102 can be dispensed with. Clearly, the absorption layer can be or can be provided by means of the opaque substrate 102. 5A, 5B and 5C respectively illustrate a method for patterning a layer according to various embodiments in a schematic side view or

Cross-sectional view in 500a, 500c (viewed along a Hauptprozessierseite 102t of the substrate 102) and a plan view in 500b (facing the Hauptprozessierseite 102t of the substrate 102).

According to various embodiments, the method in 500a, 500b for coating the substrate 102 may include forming a plurality of separate segments 204 having or forming the sacrificial material 202o. Between the plurality of separated segments 204, the substrate 102 may be exposed.

The separated segments 204 may form a mask 902 (also referred to as sacrificial mask 902) having a contiguous region 502o in which the mask 902 is open. In other words, the mask 902 may be a contiguous (eg

path-coherent) opening 502o which exposes the substrate 102. In other words, the sacrificial material 202o may form a mask 902 over the substrate 102, the mask 902 having a continuous opening 204o, e.g. through which the target material 102t can pass or at least pass.

According to various embodiments, the method in 500c may include: placing the target material 202t over the substrate 102 and over the plurality of separated segments 204. In other words, the plurality of separated segments 204 may be covered with the target material 202t.

6A and 6B respectively illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view in FIG. 600a (looking along a main processing side 102t of the substrate 102) and a plan view in FIG. 600b (looking toward the main processing side 102t of FIG Substrate 102).

According to various embodiments, the method in 600a, 600b may include placing a mask 502 over the substrate 102, e.g. between the substrate 102 and a solid particle emitting device 152. The process may be carried out in a vacuum, i. at a pressure of less than 0.3 bar. The vacuum can by means of a

Be provided or vacuum chamber, as will be described in more detail below.

The mask 502 may have a plurality of openings 502o, of which adjacent openings 502o of the plurality of separated openings 502o may have a distance 504d from each other. Each opening of the several separated openings

502o may have an extension 512b (lateral extent 512b). Optionally, the distance 204d of adjacent openings of the plurality of separated openings 502o may be smaller than their extension 512b (along a vertical direction 101, 103). 7A and 7B respectively illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view in 700a, 700b (looking along a main processing side 102t of the substrate 102).

According to various embodiments, the method in 700a, 700b may include emitting solid particles 104, eg, by means of the solid particle emission device 152, toward the substrate 102. At least a portion of the emitted solid particles 104 may pass through the plurality of solid particles 104 Pass through openings 502o. The solid particles 104 may include or be formed from the target material 202t (also referred to as target material particulate 104t).

In 700a, the method may include placing mask 502 a distance 502d from substrate 102. The mask 502 in may include, for example, a metal in or formed from 700a. After coating, mask 502 may be reused to coat additional substrate 102 (also referred to as replacement mask 502). Optionally, the mask 502 may be cleaned between coating a plurality of substrates 102. In 700b, the method may include placing the mask 902 in physical contact with the substrate 102. The mask 902 in, for example, may include or be formed of the sacrificial material 202o at 700a (also referred to as sacrificial mask 902). In 700b, the target material 202t may have a larger particle density than the sacrificial material 202o. Alternatively or additionally, the target material 202t may have a greater porosity than the sacrificial material 202o. Clearly, the target material 202t provided by the solid particles 104 may be porous. When the sacrificial material 202o is removed, the porous target material 202t of the layer 202 may be left behind.

According to various embodiments, the patterned layer 202 (i.e., when the sacrificial material 202o has been removed) or the target material 202t may be porous, i. Have cavities. For example, the layer 202 or the target material 202t may have a network of interconnected pores (cavities) so that it is gas-permeable.

For example, the layer 202 or target material 202t may have a porosity in a range of about 10% to about 95%, e.g. in a range from about 25% to about 75%, e.g. greater than about 40%, e.g. greater than about 50%, e.g. greater than about 60%, e.g. greater than about 70%.

According to various embodiments, the term porous or porosity relative to a region or body (e.g., layer 202 or substrate 102) may be understood as having the region or body comprising the matrix and the cavities. According to different

Embodiments may be understood as porosity a dimensionless measurand, which designates the ratio of void volume to total volume of the area or the body. A mass density of the area or the body can increase with increasing porosity, vividly because the cavities are taken into account. According to various embodiments, the term porous or porosity relative to a material can be understood as the material forming a solid matrix in which the cavities are arranged. In other words, the material may be considered the proportion of the porous area be understood, which is present in a solid state of aggregation. According to various embodiments, the porosity of the material may be understood to be a dimensionless measurand, which is the ratio of void volume to total volume (volume of material and volume of cavities) that the solid matrix spans.

8A and 8B respectively illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view in Figs. 800a, 800b (viewed along a main processing side 102t of the substrate 102). According to various embodiments, the method in 800a may include generating and / or maintaining an electric field 802a between the substrate 102 and the mask 502. The electric field 802a may be generated and / or obtained by interposing between the substrate 102 and the mask 502 electrical potential difference (ie, an electrical voltage) is generated and / or obtained, for example by means of the controller 108. According to various embodiments, the mask 502 may comprise an electrically conductive material (eg

Coating) or be formed therefrom. This can result in a more uniform electric field 802a.

Alternatively or additionally, the method in 800b may include: generating and / or maintaining an electric field 802b between the solid particle emission device 152 and the mask

502. The electric field 802b may be generated and / or obtained by generating and / or obtaining an electrical potential difference (i.e., an electrical voltage) between the solid particle emitter 152 and the mask 502, such as by the controller 108.

The electric field 802a, 802b may facilitate directing the solid particles 104 through the openings 502o of the mask. Thus, a parasitic coating of the mask 502 can be reduced or prevented. Thus, it will be clearer to replace and clean the mask 502 less frequently, which saves costs.

Optionally, the second electric field 802b may be configured such that the solid particles 104 are collimated in the direction of the substrate 102, eg in the direction of the openings 502o of the mask. Alternatively or additionally, the first electric field 802b can be set up in such a way that the solid particles 104 are collimated and / or remain in the direction of the substrate 102, for example from the direction of the openings 502o of the mask. 9A and 9B respectively illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view in Figs. 900a, 900b (viewed along a main processing side 102t of the substrate 102). According to various embodiments, the method of coating the substrate 102 in 900a may include disposing an exchange mask 502 over the substrate 102, eg, between the substrate 102 and a solid particle emitter 152. Further, the method in 900a may include emitting solid particles 104o by means of the Solid particulate emission device 152 in the direction of the substrate 102. At least a portion of the emitted solid particles 104o can pass through a plurality of openings 502o of the exchange mask 502 therethrough. The solid particles 104o may include or be formed from the sacrificial material 202o (also referred to as sacrificial material particulate 104o).

In other words, a plurality of mutually separated segments 204 may be formed, which have sacrificial material solid particles 104 o or are formed therefrom. Between the plurality of separated segments 204, the substrate 102 may be exposed.

By means of the replacement mask 502, the sacrificial mask 902 may be formed over the substrate 102, which may include or may be formed of a plurality of sacrificial material solid particles 104o.

According to various embodiments, the method of coating the substrate 102 in FIG. 900b may include emitting sacrificial material particulate 104o by the solid particulate emission device 152 toward the substrate 102. The sacrificial particulate 104o in 900b may be illustratively larger than the sacrificial particulate 104o in 900a. The sacrificial material particulate 104o may be or may be separated from each other at 900b, e.g. stochastically.

The emission of sacrificial material particulate 104o may be in 900b, less

Sacrificial material particles 104o to emit in the direction of the substrate 102, as would be necessary to fully occupy the substrate 102. This allows a particle density of

Sacrificial material particles 104o above the substrate 102 (eg, an areal density, eg, relative to the surface of the substrate 102) may be less than the reciprocal of three times the square of the mean particle diameter 204b of the sacrificial material particles 104o. The triple square of the mean particle diameter 204b may illustratively represent approximately the area occupied by a solid particle 104 (more precisely, it corresponds to the product of Pi and the square of the mean particle diameter 204b). The particle density of sacrificial material particles 104o above the substrate 102 can be clearly understood as a partial density (ie, as a partial density) - analogous to the partial pressure in a gas mixture. For example, the partial density of sacrificial particulate matter 104o over the substrate 102 (eg, total volume) may be less than about 75%, eg, less than about 50%, eg, less than about 25%.

The particle density with respect to solid particles 104 (also referred to as particle surface density) can be understood as a particle density of the sacrificial material particles 104o or a particle density of the target material particles 104. The particle density can be increased the smaller the average particle diameter of the solid particles 104, ie that these solid particles

104 are then packed tight.

The particle density with respect to a surface, e.g. of a substrate 102 can be understood as areal density, i. as the ratio of the number of solid particles 104 to that of the

Solid particles 104 spanned portion of the surface, which occupy the solid particles 104. The particle density with respect to a region, material or body (e.g., a layer) can be understood as volume density, i. as the ratio of number of

Solid particles 104 to the proportion of the volume (the area, the material or the body) spanned by the solid particles 104, which occupy the solid particles 104.

For example, a portion of the surface of the substrate 102 occupied by the sacrificial material particulate 104o, e.g. none other than about 50%, e.g. less than about 25%, e.g. less than about 25%. For example, a plurality of mutually separated segments 204 may be formed, each segment 204 of which comprises or is formed from exactly one sacrificial particulate material 104o. Between the plurality of separated sacrificial particulate matter 104o, the substrate 102 may be exposed. In other words, the victim mask 902 may include a plurality of sacrificial material separated from each other.

Have solid particles 104o, which may be disposed above the substrate 102 or may be.

FIGS. 10A and 10B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or

Cross-sectional view in 1000a, 1000b (viewed along a Hauptprozessierseite 102t of the substrate 102). According to various embodiments, the method of coating the substrate 102 at 1000a, 1000b may include emitting solid particulate matter 104t, eg, by the solid particle emitter 152, toward the substrate 102, which may be coupled to the substrate 102

Sacrificial material 202o is coated.

In 1000b, the target material 202t may have a larger particle density than the sacrificial material 202o. Alternatively or additionally, the target solid particles 104t may be smaller (i.e., have a smaller mean particle diameter) than the sacrificial solid 104o. Alternatively or additionally, the target material 202t may have a greater porosity than the sacrificial material 202o.

If the target material 202t is deposited after the sacrificial material solid particles 104o, the target material 202t may also be deposited over the sacrificial material solid particles 104o. Then, the plurality of separated sacrificial particulate matter 104o may be buried, e.g. covered by the target material 202t, e.g. covered by the target material solid particles 104t. For example, the sacrificial material particulate 104o may be embedded in the target material 202t. The particle size 202p of the plurality of separated sacrificial particulate matter 104o may be greater than about 75% of the median thickness 202d of the layer 202 to be patterned and / or the target material 202t.

If the target material 202t is deposited simultaneously with the sacrificial material solid 104o and / or from a liquid phase, the target material 202t may accumulate primarily adjacent to the sacrificial material solid particles 104o. Then, the plurality of separated sacrificial material solid particles 104o may protrude from the layer 202 to be patterned.

For example, the particle size 202p of the plurality of separated sacrificial material particles 104o may be equal to or greater than an average thickness 202d of the layer 202 to be structured (mean layer thickness 202d) and / or of the target material 202t. As an alternative to the solid particle emission, the target solid particles 104t may be or may be disposed of a liquid phase over the substrate 102.

11A and 11B respectively illustrate a method of patterning a layer according to various embodiments in a schematic side view or

Cross-sectional view in 1100a, 1100b (viewed along a Hauptprozessierseite 102t of the substrate 102). According to various embodiments, the method in 1100a may include

Pulsed irradiation of sacrificial material particles 104o 402. The irradiation 402 may be configured such that the sacrificial material solid particles 104o are brought to the transition temperature or more. In this case, the sacrificial material solid particles 104o can evaporate and / or sublimate.

Optionally, the pulsed irradiation 402 may be on both sides of the substrate.

According to various embodiments, the method in 1100b may include coating the substrate 102, over which the sacrificial material solid particles 104o are disposed, with a gaseous and / or liquid target material 1102. In 1100b, the target material 202t may be formed by physical vapor deposition 1102, a chemical vapor deposition process

Chemical vapor deposition (CVD) 1102, atomic layer deposition (ALD) 1102, plasma spraying 1102, or liquid phase deposition 1102 may be disposed above the substrate 102, e.g. alternatively to the target material solid particles 104t.

Further (e.g., subsequently or simultaneously), sacrificial particulate matter 104o may be removed, e.g. after arranging the sacrificial material solid particles 104o as described above.

According to various embodiments, simultaneous removal (e.g., depending on material combination and / or application), i. simultaneously with disposing the sacrificial material particulate 104o, may be provided by using the thermal input of the coating process used to dispose the target material 202t to remove the particulate sacrificial particulate 104o. In other words, by means of the

Placing the target material 202t thermal energy in the sacrificial material particles 104o be entered such that the sacrificial material particulate 104o on the first

Transition temperature are brought or above. Thus, a transfer 432 of the

Sacrificial material particles 104o in the gaseous state. By way of example, the coating process may include or be formed by electron beam coating or plasma spraying. This can be dispensed with 104o an additional step to remove the sacrificial material solids.

12A, 12B, 12C and 12D respectively illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view (viewed along a main processing side 102t of the substrate 102). According to various embodiments, the sacrificial material 202o may be or may be processed in 1200a from a liquid phase 1602. For example, the liquid phase 1602 may include or be formed from the sacrificial material 202o, such as a liquid solvent. For example, the liquid phase 1602 may have the sacrificial material 202o of a precursor or the target material solid particles 104o. Alternatively, the

Liquid phase 1602 may include or be formed from the sacrificial material 202o, e.g. the molten sacrificial material 202o. The liquid phase 1602 may be or may be disposed over the substrate 102 by a printing process, e.g. by means of a liquid phase distributor 1202a, e.g. a printhead 1202a or a sprayer 1202a.

According to various embodiments, the target material 202t may be or may be processed in 1200b from a liquid phase 1602. The liquid phase 1602 may include or be formed from the target material 202t and a liquid, e.g. a liquid solvent. For example, the liquid phase 1602 may have the sacrificial material 202o of a precursor or the target material solid particles 104o. Alternatively, the liquid phase 1602 may include or be formed of the target material 202t in liquid, e.g. the melted

Target material 202t. The liquid phase 1602 may be or may be disposed over the substrate 102 by a printing process, e.g. by means of a liquid phase distributor 1202a, e.g. a printhead 1202a or a sprayer 1202a.

According to various embodiments, the sacrificial material particulate 104o may be or may be processed in 1200c from a liquid phase 1602. The liquid phase 1602 may include or be formed of the sacrificial material particulate 104o and a liquid, e.g. a liquid solvent. Optionally, the liquid phase 1602 may have the target material 202t in the form of a precursor or the target material solid particles 104o (see 1200d). Alternatively, the liquid phase 1602 may include or be formed of the target material 202t in liquid, e.g. the molten target material 202t. The liquid phase 1602 can by means of a

Printing process can be placed over the substrate 102, e.g. by means of a

Liquid phase distributor 1202a, e.g. a printhead 1202a or a sprayer 1202a.

According to various embodiments, in 1200d, the target solid particles 104t and the sacrificial solid particles 104o may or may be processed from a common liquid phase 1602. The liquid phase 1602 may include or be formed of the sacrificial material solid particles 104o, the target material solid particles 104t, and a liquid, eg, a liquid solvent. The liquid phase 1602 may be disposed over the substrate 102 by means of a printing process, for example by means of a liquid phase distributor 1202a, eg a printhead 1202a or a sprayer 1202a. In 1200d, the to be structured For example, layer 202 may have a larger particle density of target solid particles 104t than sacrificial solid particles 104o. In other words, the target material 202t may have a larger particle density than the sacrificial material 202o. In general, 1200a, 1200b, 1200c, 1200d may include a suitable liquid phase deposition 1202a, for example a spray coating (also referred to as spray coating), a curtain coating (also referred to as curtain coating) and / or a slot die coating (also referred to as a slot coating). Die-coating), eg using an optional replacement mask 502.

13A and 13B respectively illustrate a coating arrangement 1300a, 1300b in a method according to various embodiments in a schematic side view or cross-sectional view (viewed along a main processing side 102t of the substrate 102).

The coating of the substrate 102 may be done in a vacuum, e.g. in a coating arrangement 1300a, 1300b.

According to various embodiments, the coating assembly 1300a, 1300b may include a vacuum chamber housing 802 in which a vacuum may be created and / or obtained. The vacuum chamber housing 802 can be, for example, airtight, dustproof and / or vacuum-tight set up or become. The vacuum chamber housing 802 may include one or more vacuum chambers. The or each vacuum chamber may provide one or more vacuum areas 306b, 308b. The vacuum chambers of vacuum chamber housing 802 may optionally be at least partially gas-separated from one another.

Further, the vacuum chamber housing 802 may be coupled to a pump system 804 (including at least one high vacuum pump). The pump system 804 may be configured to extract a gas (eg, the process gas) from the vacuum chamber housing 802 such that within the vacuum chamber housing 802 there is a vacuum (ie, a pressure less than 0.3 bar) and / or a pressure in a range of approximately one mbar to about 10- ³ mbar (in other words, a fine vacuum) and / or a pressure in a range from about 10- ³ mbar to about 10 ^-7 mbar (in other words, high vacuum) or a pressure less than the high vacuum, for example less than can be provided about 10- ⁷ mbar (in other words ultra-high vacuum) or.

According to various embodiments, the coating assembly 1300a, 1300b may include a gas supply 1716. By means of the gas supply 1716, the vacuum chamber housing 802 a process gas are supplied to form a process atmosphere in the

Vacuum chamber housing 802. The process gas may e.g. have or be formed from an inert gas. Alternatively or additionally, the process gas may comprise or be formed from nitrogen, hydrogen, argon and / or carbon. The process pressure can be formed from a balance of process gas, which is supplied by means of the gas supply 1716 and withdrawn by means of the pump system 804.

Further, the vacuum chamber housing 802 may be configured such that the

Vacuum conditions (the process conditions) within the vacuum chamber housing 802 (e.g., process pressure, process temperature, chemical process gas composition, etc.) may be set or regulated (e.g., locally), e.g. during coating, e.g. For example, by means of vacuum chamber housing 802, at least one vacuum region 306b, 308b, e.g. a plurality of vacuum areas 306b, 308b having different from each other

Vacuum conditions, be provided or be.

According to various embodiments, the controller 108 may be configured to control and / or regulate an optional substrate temperature control device 1124 (eg, including a heater and / or a cooling device) such that a process temperature (eg, of the substrate 102 and / or the process gas), for example during processing (eg during coating), controlled and / or regulated. For example, the controller 108 may be configured to control and / or regulate electrical power supplied to the substrate temperature control device 1124 and / or thermal power dissipated therefrom. According to various embodiments, the controller 108 may be configured to control and / or regulate the gas supply 1716 and / or the pump system 804, such that a

Process pressure and / or a process gas composition can be controlled and / or regulated. For example, the controller 108 may be for controlling and / or regulating a

Standard volume flow to be adjusted to process gas, which is supplied by means of the gas supply 1716 and / or extracted by means of the pump system 804.

In the vacuum chamber housing 802 (eg in a first vacuum chamber) at least one vacuum region 306b, eg a first vacuum region 306b, may be arranged. Further, in the vacuum chamber housing 802 (eg, in the first vacuum chamber), a solid particle emitting device 152 may be arranged to emit solid particles 104 (eg, the sacrificial material particulate 104o and / or the target particulate matter 104t) into the particulate matter first vacuum area 306b inside. In other words, the solid particle emission can occur in a vacuum. The first vacuum region 306b may be a coating region 306b.

In the vacuum chamber housing 802 (e.g., in a second vacuum chamber or in the first vacuum chamber), at least one additional vacuum region 308b, e.g. a second

Vacuum area 308b may be arranged. Furthermore, a thermal structuring device 308 may be arranged in the vacuum chamber housing 802 (eg in the second vacuum chamber) for structuring the coating 202 to be structured (also referred to as layer 202 to be structured) of the substrate 102. For example, the thermal structuring device 308 may be used to provide Radiation, eg be arranged by pulsed radiation (also referred to as radiation pulses). The second vacuum region 308b may be a patterning region 308b.

For example, the thermal structuring device 308 may include at least one

Irradiation device, for example, a light source (e.g., a laser, a lamp, a flash lamp, or an X-ray source), a heat radiation source, or a particle source (e.g., an electron source or a proton source). The at least one irradiation device may be a pulsed or a continuously operated irradiation device. In other words, by means of the at least one thermal structuring device 308, pulsed or continuous radiation 402 (for example electromagnetic radiation, such as light,

Heat radiation and / or particle radiation, such as electron radiation and / or ion radiation) are generated, for example, a continuous electron beam 402 by means of a

Electron beam gun (e.g., by a line source) or a pulsed flash of light 402 by means of a flashlamp (e.g., a gas discharge lamp or a light emitting diode). For example, thermal patterning device 308 may include or be formed from one or more flash lamps. The or each flashlamp may comprise a gas discharge lamp which is pulsed, e.g. by means of the controller 108. For pulsed operation of the or each gas discharge lamp, a current pulse may be discharged through the gas discharge lamp.

By means of the thermal structuring device 308, rapid thermal processing (annealing) of the layer 202 to be patterned can be carried out (for example rapid thermal processing - RTA, for example by means of a flash lamp).

According to various embodiments, the controller 108 may be configured to control and / or regulate the solid particle emission device 152 and / or the thermal patterning device 308, eg by controlling a quantity of material and / or thermal energy (eg Radiation energy) controls and / or regulate which is emitted per time in the direction 105 of the substrate 102.

Furthermore, the coating arrangement 1300a may include an unwinding roll 502a for unwinding a substrate 102, such that the substrate 102 is introduced into the at least one vacuum region 306b, 308b. Furthermore, the coating arrangement 1300a may comprise a take-up roll 502b for winding up the substrate 102, which comprises the at least one

Vacuum range 306b, 308b is brought out. In other words, the substrate 102 may be processed from roll-to-roll.

Further, the coating assembly 1300a may include a plurality of transport rollers 508 defining a transport path along which the substrate 102 (e.g., a belt-shaped substrate) is transported between the unwind roll 502a and the take-up roll 502b through the at least one vacuum region 306b, 308b, e.g. in a transport direction 102s.

Alternatively, the coating assembly 1300b may include a plurality of transport rollers 508 configured to transport a plate-shaped substrate 102 in the transport direction 102s. The plate-shaped substrate 102 may, e.g. on the transport rollers 508 resting and / or inserted into a substrate carrier transported.

Further, the coating assembly 1300a, 1300b may include a drive system 518 which is coupled to at least a portion of the plurality of transport rollers 508, and optionally to the unwind roll 502a and take-up roll 502b, 518k. For example, the drive system 518 may be coupled to the rollers 508, 502a, 502b by means of chains 518k, belts 518k or gears 518k. The transport rollers 508 and the drive system 518 may be part of the

Positioning device be.

The controller 108 may be configured to control 518k and / or regulate 518k the drive system 518, e.g. for controlling 518k and / or regulating 518k a transport speed and / or position of the substrate 102 during coating and / or irradiation, e.g. based on a coating progress and / or a structuring progress.

According to various embodiments, the coating assembly 1300a, 1300b may optionally include at least one substrate pretreatment device 310 (i.e., one or more

Substrate pretreatment devices 310) for pretreating the substrate 102, e.g. for chemically activating the substrate 102. For example, the at least one

Substrate pretreatment devices 310 may be configured to chemically attach the substrate 102 for example, to chemically activate its surface, to clean the substrate 102, and / or to etch the substrate 102.

For example, the at least one substrate pretreatment device 310 may include a

Alternatively or additionally, the at least one substrate pretreatment device 310 may comprise or be formed from at least one sputter etching source, at least one plasma source, at least one glow device and / or at least one etching gas source. For example, pretreating the substrate 102 may include sputter etching the substrate 102; ion etching and / or smoldering.

Optionally, by means of the at least one substrate pretreatment device 310, a water film can be removed from the substrate 102. Alternatively or additionally, by means of the substrate pretreatment apparatus 310, a number of open chemical bonds of the substrate 102 (also referred to as chemical activation) may be increased, e.g. can improve adhesion and formation of the layer 202 to be patterned on the substrate 102.

Alternatively or additionally, a substrate aftertreatment device 310 may be used to post-treat the substrate 102 comprising the patterned coating 202 (also referred to as patterned layer 202), e.g. similar to the pretreatment. For example, the substrate 102 having the opened layer 202 may be selectively heated (e.g., annealed) and / or etched.

Optionally, the mask 502 may be stored (if used) by means of the positioning device. For example, the positioning device may be configured to move the mask in the coating area 306b. For example, the controller 108 may be configured to transport the mask 502 and the substrate 102 at a same speed and / or in the same direction 102s. 14A illustrates an energy store 1400a in a method according to various embodiments in a schematic side view or a schematic one

Cross-sectional view (viewed along a Hauptprozessierseite 102t of the substrate 102).

Energy storage 1400a may include, according to various embodiments, a first electrode 1012 having a first chemical potential. The first electrode 1012 may include a sheet-like substrate 102 (eg, including or formed from copper). The sheet-like substrate 102 may include or be formed from a film and / or a plate be. The film may, for example, have a thickness of less than about 100 μm, for example less than about 50 μm

Furthermore, the first electrode 1012 may comprise an active material 1012a, which is arranged above the planar substrate 102. The active material 1012a of the first electrode 1012 (also referred to as the first active material 1012a) may provide the first chemical potential of the first electrode 1012. The first active material 1012a may, for example, comprise or be formed from lithium iron phosphate (LFPO) (for example in a lithium iron phosphate energy storage 1400a), lithium manganese oxide (LMO) or be formed therefrom (eg in one) Lithium-manganese-oxide energy storage 1400a) or lithium titanate (LTO) (eg when the first electrode 1012 is an anode) or formed therefrom (eg in a lithium titanate energy storage 1400a), lithium nickel cobalt Manganese oxide (LNCM) or be formed from it, have lithium-nickel-cobalt-aluminum oxide (LNCA) or be formed from or have lithium cobalt oxide (LiCoO) or be formed therefrom (eg in a lithium cobalt - oxide energy storage 1400a). For lithium ion energy storage 1400a, the active material 1012a may also be referred to as lithium compound active material 1012a.

The first active material 1012a may optionally be provided by a first patterned layer 202 according to various embodiments. Alternatively or additionally, the first active material 1012a may or may not be provided in the form of solid particles 104.

Furthermore, the energy store 1400a may have a second electrode 1022, which has a second chemical potential. Between the first electrode 1012 and the second electrode 1022, an electric voltage may be formed, e.g. when the energy storage 1400a is or becomes charged, which approximately corresponds to the difference between the first chemical potential and the second chemical potential.

Optionally, the energy storage 1400a may be encapsulated by an encapsulation 1030 surrounding the first electrode 1012 and the second electrode 1022. The second electrode 1022 and the first electrode 1022 may be or may be encapsulated together.

A pair of second electrode 1022 and first electrode 1022 may also be referred to as an energy storage cell. Optionally, the energy storage 1400a may include a plurality of energy storage cells.

The substrate 102 may illustratively comprise or be formed from a sheet-like carrier 102 for the current collector, for picking up the electrical charges by means of the Current collector, which takes place through an ion exchange between the first electrode 1012 of the first electrode 1022 and the second electrode 1022, for example, when the energy storage 1400a discharges. The ions that move between the first electrode 1012 and the second electrode 1022 (ion exchange) may cause a conversion of stored chemical energy (eg, when the energy storage 1400a is charged) into electrical energy, where the electrical energy applies an electrical voltage to the Contacts 1012k, 1022k (see Fig. 5B).

For example, encapsulation 1030 may include or be formed from a polymer. Optionally, encapsulant 1030 may include a metallization and / or a contact 1012k, 1022k.

14B illustrates an energy storage device 1400b according to various embodiments in a schematic side view or cross-sectional view (viewed along a main processing side 102t of the substrate 102).

According to various embodiments, the second electrode 1022 may be or may be configured analogous to the first electrode 1012, as described in more detail below. The second electrode 1022 may comprise a sheet-like substrate 102 (e.g., comprising copper or formed therefrom), e.g. a foil similar to the foil of the first electrode 1012.

Further, the second electrode 1022 may include a second active material 1022 a disposed on the sheet-like substrate 102 of the second electrode 1022, the second active material 1022 a providing the second chemical potential of the second electrode 1022. The second active material 1022a may optionally be provided by a second patterned layer 202 according to various embodiments. Alternatively or additionally, the second active material 1022a may or may be provided in the form of solid particles 104.

The second active material 1022a of the second electrode 1022 (e.g., the anode) may be different from the first active material 1012a of the first electrode 1012. For example, the second active material 1022a may include or be formed from graphite (or carbon in another carbon configuration), nanocrystalline and / or amorphous silicon, or lithium titanate or lithium titanium oxide (LTO, eg, TI5O12) or be formed from or have tin dioxide (SnC) or be formed therefrom.

Furthermore, the energy store 1100 may have a first contact 1012k which contacts the first electrode 1012 and, for example, with the first structured layer 202 electrically conductive connected is. The first contact 1012k may have an exposed surface. Furthermore, the energy store 1100 may have a second contact 1022k, which contacts the second electrode 1022 and is, for example, electrically conductively connected to a second structured layer 202. The second contact 1022k may have an exposed surface. An electrical voltage can form between the first contact 1012k and the second contact 1022k, for example when the energy store 1100 is charged, which corresponds approximately to the difference between the first chemical potential and the second chemical potential.

Optionally, the energy storage 1100 may include a separator 1040. The separator 1040 may spatially and electrically separate the first electrode 1012 and the second electrode 1022, in other words, the negative and positive electrodes (i.e., cathode and anode). However, the separator 1040 may be transparent to ions moving between the first electrode 1012 and the second electrode 1022. The ions that move between the first electrode 1012 and the second electrode 1022 may cause a conversion of stored chemical energy (eg, when the energy storage 1100 is charged) into electrical energy, where the electrical energy is an electrical voltage at the contacts 1012k, 1022k provides.

The separator 1040 may include or be formed from a microporous plastic and / or the separator 1040 may include or be formed from a fiberglass or polyethylene nonwoven web. According to various embodiments, the separator 1040 may be provided in the form of the solid particles 104 or as a dense solid electrolyte layer.

Alternatively or additionally, the separator 1040 may be provided by means of the structured layer 202

be or be provided.

FIGS. 15A and 15B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or

A cross-sectional view in FIG. 1500b (looking along a main processing side 102t, 102b of the substrate 102) and a plan view in FIG. 1500a (looking at the main processing side 102t of the substrate 102).

According to various embodiments, the method in 1500a may include opening the layer 202 to be patterned in the plurality of regions 204o by removing the sacrificial material 202o. For example, the opened layer 202 (also referred to as patterned layer 202) may have a plurality of openings 204o arranged in a pattern (eg equidistant from each other 204d) and / or between which the target material 202t is disposed. The target material 202t may include or be formed from a metal. The patterned layer 202 may include a plurality of lands 202s (eg, metal lines 202s) that may include or be formed from the target material 202t. Of the plurality of lands 202s, a first group may extend along a first direction 101 and a second group along a second direction 103 (eg, transverse thereto). The first group and the second group can vividly cross each other. The plurality of lands 202s may form a net (eg, a metal net).

The spacing 204d of adjacent openings 204o from one another may define the land width 204d. The extent 204b of the openings 204o may be greater than that of the lands 202s (i.e., as the land width 204d), e.g. more than ten times larger. For example, the extent 204b of the openings 204o may range from about 0.1 mm to about 1 mm. The

Land width 204d may be less than about 100 μιη, e.g. in a range from about 1 μιη to about 100 μιη, e.g. in a range of about 3 μιη to about 10 μιπ

The plurality of openings 204o may occupy more than 80% of the area of the substrate 102. This achieves the highest possible transparency of the structured layer 202, e.g. greater than about 80%, e.g. more than about 90%, e.g. more than about 95%. For example, patterning layer 202 may include opening more than 80% of layer 202 to be patterned, e.g. greater than about 80%, e.g. more than about 90%, e.g. more than about 95%. Alternatively or additionally, the patterned layer 202 may have a thickness less than about 80 nm, e.g. less than about 40 nm, e.g. less than about 20 nm, e.g. in a range of about 15 nm to about 20 nm. According to various embodiments, the method in 1500b may include: forming a capacitive area sensor by means of the target material 202t, i. by means of the structured layer 202 (after opening).

The capacitive area sensor may include the patterned layer 202 having a plurality of lands 202s. The patterned layer 202 may be or may be applied to a sheet substrate 102. The sheet-like substrate 102 may comprise, for example, a polymer film which may optionally be laminated to a glass substrate.

The patterned layer (s) 202 may each provide a sensor layer 202. An AC voltage applied to the corners of the patterned layer 202 can produce a constant, uniform electric field. Penetrates an electrically conductive body in the vicinity of the electric field (ie the capacitive surface sensor), for example, when touching the capacitive Area sensor, a small charge transport can be effected, which can be detected in the discharge cycle in the form of a current at the corners. The resulting electrical currents from the corners may be in direct proportion to the position of the penetrating body. The capacitive area sensor may include a controller 1702s (eg, a processor) that detects the resulting currents and provides information that represents the location.

According to various embodiments, the method in 1500b may further include: forming a metallization that electrically contacts the target material 202t. The metallization may include one or more electrical leads electrically connecting the controllers 1702s to the plurality of lands, e.g. in at least the four corners.

The capacitive area sensor may for example be part of or form part of a touch-sensitive input device (also referred to as a touch-sensitive input device). Alternatively or additionally, the capacitive surface sensor may be designed as an indicating surface sensor or be. Then, the capacitive area sensor may include an optional optoelectronic device 1702, e.g. a display 1702, e.g. a screen. The display 1702 may include a plurality of pixels that may be or may be driven by a graphics driver of the display 1702. For example, the graphics driver may be implemented in the controller 1702s.

According to various embodiments, the substrate 102 may be coated on both sides with a patterned layer 202, e.g. from two opposite sides 102t, 102b.

FIGS. 16A and 16B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or

Cross-sectional view. According to various embodiments, the method in FIG. 1600a may include forming a

Liquid phase 1602 (eg, a dispersion 1602), which has the solid particles 104t, 104o, eg the sacrificial material solid particles 104o and / or the target material solid particles 104t. The liquid phase 1602 can be understood as a heterogeneous mixture (dispersion) of suspended solid particles (the solid particles 104t, 104o) in a liquid. The liquid may be a carrier liquid into which the solid particles 104t, 104o are added. The liquid may be, for example, an organic solvent (eg, ethanol and ethyl acetate or others Carboxylic acid ester), water and / or a binder (eg, a resin) or be formed therefrom.

For forming the liquid phase 1602, a particle container 106 may be used in which the solid particles 104t, 104o may or may be disposed, e.g. the sacrificial material solid particles 104o and / or the target material solid particles 104t. Particle container 106 may be, for example, a printer tank, e.g. when the liquid phase 1602 is printed. Alternatively, the particle container 106 may be a metering container, e.g. when the liquid phase 1602 is applied by means of a spin coating.

According to various embodiments, a first liquid phase 1602 may be formed having more sacrificial material particulate 104o than target particulate matter 104t, e.g. only the sacrificial material solid particles 104o. Alternatively or additionally, a second liquid phase 1602 may be formed which has fewer sacrificial material particulate 104o than target particulate solids 104t, e.g. only the target material solid particles 104t.

According to various embodiments, the method in 1600b may include: coating the substrate 102 using the liquid phase 1602. The coating of the substrate 102 may include placing the liquid phase 1602 over the substrate 102, e.g. by means of a liquid phase distributor 1202a (cf. Fig. 12A, Fig.12B, Fig.12C and Fig.12D) or by means of a metering device. Forming the liquid phase layer 202 to be patterned 1602 may include

Solvent from the layer 202 to be structured to bring out (also referred to as dry), so that the remaining solid particles 104t, 104o form a solid layer 202.

For example, the first liquid phase 1602 may be dried before the substrate 102 is coated by the second liquid phase 1602.

Alternatively or additionally, the substrate 102 may be coated by means of a liquid phase 1602 comprising the sacrificial material solid particles 104o and the target material solid particles 104t. In general, in 1600b, a suitable liquid phase deposition 1202a, such as spray coating, curtain coating, and / or a slot die coating, may be used. 17A and 17B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or

Cross-sectional view.

According to various embodiments, the method in 1700a may include: Co-depositing solid particles 104t (also referred to simply as particles) of a first type (e.g.

Nanoparticles) with solid particles 104o of a second type (e.g., microparticles), i. together (at the same time). The solid particles 104t of the first type may include or may be formed from the target material 202t. The second-type solid particles 104o may include or be formed from the sacrificial material 202o.

The solid particles 104t of the first type (also referred to as target material solid particles 104t) may have a smaller average size than the solid particles 104o of the second type (also referred to as sacrificial material solid particles 104o). Alternatively or additionally, the solid particles 104t of the first type may have a larger particle density in the

structuring layer 202 as the solid particles 104o of the second type.

According to various embodiments, instead of the solid particles 104t of the first type, the target material 202t may be formed of a precursor or a gaseous material, e.g. a target material 202t having few or no pores, i. a clearly massive target material 202t.

According to various embodiments, the solid particles 104t of the first type may be deposited by means of a solid particle emission. Optionally, physical vapor deposition (e.g., thermal evaporation) may occur to the solid particle emission. By means of the vapor deposition, the target material 202t (e.g., when it is to be solid) and / or an adhesion promoter material can be deposited.

By means of physical vapor deposition, a gaseous coating material may or may not be provided. For example, the physical vapor deposition may include or be formed by thermal evaporation or sputtering. Alternatively or in addition to the physical vapor deposition (PVD) may be a chemical

Gas phase deposition (CVD) or an atomic layer deposition (ALD) can be used. For example, the adhesion promoting material may improve adhesion of the solid particles 104t of the first type (ie, the target solid particles 104t) to each other and / or to the substrate 102. Alternatively or additionally, the adhesion promoting material may be liable to

To improve solid particles 104o of the second type (i.e., the sacrificial material solid particles 104o) to the substrate 102 and / or to the solid particles 104t of the first type.

Alternatively or in addition to the adhesion promoting material, an electrically conductive material may be evaporated, e.g. a metal or carbon. The electrically conductive material can improve an electrical conductivity of the layer 202 to be structured. For example, the electrically conductive material may be deposited to the target material solid particles 104t.

In other words, the layer 202 to be structured may be provided by means of a solid particle emission (also referred to as particle emission process) plus an optional thermal

Evaporation be formed. For example, this can increase mechanical and / or chemical strengths, electrical conductivity and / or ionic conductivities.

For example, the substrate 102 may comprise or be formed from a foil, e.g. a glass sheet, a metal foil and / or a polymeric film, e.g. a laminate of a plurality of films, at least one of which may include or may be formed from a metal and another may comprise or may be comprised of a polymer; or of which at least one film may comprise or may be formed from a glass and another film may comprise or be formed from a polymer.

According to various embodiments, the method in 1700b may include: transferring the sacrificial material 202o into a gaseous aggregate state. The conversion into the gaseous state of aggregation can also be referred to as volatilization. By means of flash lamp heating (FLA) or a

Rapid Thermal Process (RTP) can be a selective volatilization

(Evaporation and / or sublimation) of the solid particles 104o of the second type (eg microparticles) are effected. The target material solid particles 104t may include or be formed from an active material. The sacrificial material particulate 104o may include or be formed from an inorganic and / or organic material (eg, inorganic or organic microparticles). in the Compared to the active material (in the form of smaller solid particles 104t, eg nanoparticles), the sacrificial material 202o may be low melting and have a high vapor pressure.

According to various embodiments, the method in 1700b may include:

explosively removing a portion of the target material 202t (e.g., an active material). In this case, vacancies 204o remain behind. High specific surface areas can be the result.

In addition, depending on the registered energy density during irradiation, recrystallization and / or at least partial melting of the target material 202t may also be effected.

If an energy store is formed using the target material 202t, the

Recrystallization and / or at least partial melting, for example, increase the efficiency of the energy storage (e.g., a battery). As the active material for a lithium-ion energy storage (e.g., a lithium-ion battery), a suitable chemical composition may be used, e.g. LMC (Lithium Manganese Cobalt Oxide), NMC (Lithium Nickel Manganese Cobalt Oxide), LFP (Lithium Iron Phosphate), LiS (Lithium Sulfur), Silicon or Silicon Composites, Graphite, Lithium, or LTO (Lithium titanate).

For example, sacrificial material 202o or sacrificial material particulate 104o may include or be formed from a polymer, a monomer, PTFE, carbon in a carbon modification (e.g., in the form of graphite), a metal (such as lithium).

As an alternative to the solid particle emission of the solid particles 104o, 104t, a

Liquid phase deposition can be used to coat the substrate 102, e.g.

Slot die coating, spraying or printing. For example, the target material 202t in the form of nanoparticles by means of a nanosuspension solution and / or a

Nanodispersionslösung be arranged on the substrate 102 or be. Alternatively or additionally, the sacrificial material 202o in the form of microparticles by means of a

Microsuspension solution and / or microdispersion solution may be arranged on the substrate 102 or.

According to various embodiments, the substrate 102 may comprise or be formed from a transparent material or comprise or be formed from an opaque material (i.e., an optically dense substrate 102).

According to various embodiments, the substrate 102 may include glass, metal (such as stainless steel, aluminum, copper) and / or a polymer (such as polyethylene and / or Polyethylene terephthalate) and / or mica (eg, having phyllosilicate or formed therefrom) or be formed therefrom.

FIGS. 18A and 18B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or FIG

Cross-sectional view.

According to various embodiments, the method in 1800a may include:

Briefly annealing 402 the layer 202 to be structured. The short-time annealing 402 may be one-sided (e.g., from the first main processing side 102t or from the second main processing side 102b). Alternatively, short term annealing 402 may be performed on both sides (e.g., from the first

Main processing side 102t and from the second main processing side 102b).

According to various embodiments, the method in 1800a may include generating a particle stream 1802 (i.e., a stream 1802 of solid particles 104). The particle stream 1802 may include or be formed from the sacrificial material particulate 104o and / or the particulate solid particulate 104t. The solid particles 104 of the particle stream 1802 may have a direction of movement 105 towards the substrate 102 (i.e., in the coating direction 105). The particle stream 1802 may be directed to the substrate 102. A mask 502 (also referred to as a shadow mask 502 or replacement mask 502) may be disposed between the particle stream 1802 and the substrate. In other words, the particle stream 1802 may or may not be directed to the shadow mask 502. For example, a collective particle emission can be effected by means of a solid particle emission, with the emitted solid particles 104 flowing in the direction of the substrate 102.

According to various embodiments, the emitted solid particles 104 may have an electrostatic charge, i. from a reference potential, e.g. electrical mass, distinguish). For example, the emitted solid particles 104 may have an electrically negative charge (with respect to the reference potential).

According to various embodiments, it has been recognized that the electrical charge of the solid particles 104 can be used to influence their movement in the direction 105 substrate 102. For example, the electrical charge of the solid particles 104 may be used to preferentially conduct (eg, deflect) the solid particles 104 through the openings 502o (eg, slots 502o) of the mask 502 by attaching the mask 502 (eg, an electrically conductive mask 502) to electrically negative potential is applied. For example, the electric potential of the mask 502 may be more negative than the electric potential of the solid particles 104.

Figure 19 illustrates a mask 502, 902 for patterning a layer according to various embodiments in a schematic side view or cross-sectional view (e.g., across a particle stream), e.g. the sacrificial mask 902 and / or the replacement mask 502.

The mask 502, 902 may have a plurality of elongated openings 502o. The openings 502o may extend along a direction 1901.

According to various embodiments, the direction 1901 may be oriented transversely to a transport direction 102s of the substrate 102. Then, the substrate 102 and the mask 502, 902 may be set in a fixed position (orientation and / or orientation) relative to each other. For example, the substrate 102 (e.g., a belt-shaped substrate 102) may be sequentially coated.

If the replacement mask 502 is arranged stationary, the substrate 102 can be arranged in several

successively following steps are coated, wherein in successive steps each adjacent regions of the substrate 102 are coated. During the coating in each step, the substrate 102 may or may not be stationary. Between the successive steps, the substrate 102 can be further transported by one area. When the substrate 102 is moved, coating may or may not be stopped. Alternatively, the replacement mask 502 may be the same size as the substrate 102 or larger. Thus, individual (e.g., plate-shaped) substrates 102 may or may be sequentially coated.

Alternatively, the replacement mask 502 may be moved equal to the substrate 102.

According to various embodiments, the direction 1901 may be along a

Transport direction 102s of the substrate 102 may be aligned or be, for. a ribbon-shaped substrate 102 or a plate-shaped substrate 102. Then, the substrate 102 relative to the

Replacement mask 502 to be moved. Clearly, the substrate 102 can be coated continuously. For example, the substrate 102 may be transported continuously during coating. FIGS. 20A and 20B each illustrate a method for patterning a layer according to various embodiments in a schematic side view or

Cross-sectional view (viewed along a Hauptprozessierseite 102t of the substrate 102). According to various embodiments, the sacrificial material 202o in 2000a may be or may be disposed of a liquid phase 1602 over the substrate 102, eg, in a plurality of separated segments 204, such as islands, honeycombs, or lands. After the sacrificial material 202o has been disposed over the substrate 102, the target material 202t may or may be disposed over the substrate 102, eg over the target material 202t and between the segments 204.

For example, the sacrificial material 202o may be arranged by means of a printing process (also referred to as additive lithography, or printing). For example, a large-area microstructure or nanostructure may be formed which may include or be formed from the sacrificial material 202o.

According to various embodiments, the (e.g., organic or inorganic)

Sacrificial material 202o be set up as described above. For example, the sacrificial material 202o may or may not be arranged in a honeycomb or other geometric pattern. In other words, a microstructure or nanostructure may be or may be formed which may include or be formed from the sacrificial material 202o to be subtracted (to be evaporated). After coating the micro or nanostructure with the

Target material 202t and subtracting the sacrificial material 202o, the corresponding remainder of the target material 202t may remain adjacent to the segments 204 (also referred to as

Subtraction lithography).

According to various embodiments, the method may further include in 2000b:

Transferring the sacrificial material 202o into a gaseous state, e.g. by means of irradiation 402 of the layer 202 to be structured. Thus, the layer 202 to be structured can be opened in the regions 402 in which the sacrificial material 202o was arranged. In other words, the layer 202 to be patterned can be patterned by opening 204o in the

structuring layer 202 are formed. FIG. 21, FIG. 21B and FIG. 21C respectively illustrate a method of patterning a layer according to various embodiments in a schematic side view or cross-sectional view (viewed along a main processing side 102t of the substrate 102).

According to various embodiments, the method in 2100a may include: patterning a first layer 202 (eg, as described above); and patterning a second layer 212 (after the first layer 202), wherein the first layer 202 is disposed between the substrate 102 and the second layer 212. The first layer 202 may include or be formed from a first target material 202t. The first layer 202 may be patterned by selectively using a first sacrificial mask 902 (ie, a first sacrificial material 202o) or by using a first exchange mask 502, as described above. The first sacrificial mask 902 (or the first sacrificial material 202o) and / or the first target material 202t may optionally be provided in the form of solid particles 104.

The second layer 202 may include or be formed from a second target material 212t. The second layer 212 may be patterned by selectively using a second sacrificial mask 902 (i.e., a second sacrificial material 202o), a second exchange mask 502, or the first replacement mask 502, as described above. The second sacrificial mask 902 (or the second sacrificial material 212o) and / or the second target material 212t may optionally be in the form of

Solid particles 104 may or may not be provided.

Optionally, a filler 2102 (e.g., including or formed from the second target material 212t) may or may not be disposed in the openings 204o of the first layer 202, e.g. in an optional first coating step. For example, the first sacrificial material 202o may be replaced with the filler 2102 (e.g., the second target material 212t). Thus, the

Openings 204o of the first layer 202 are at least partially (partially or completely) filled with the filling material 2102 (e.g., the second target material 212t). Alternatively, or in addition to the second target material 212t, the filler 2102 may include or be formed from another material, e.g. a metal or a holding metal. Subsequently, e.g. in an optional second coating step, the second target material 212t may be disposed over the first layer 202, e.g. the first target material 202t at least partially covering.

When a second sacrificial mask 902 is used to pattern the second layer 212, it may or may not be formed after the placement of the fill material 2102. When an exchange mask 502 is used to pattern the second layer 212, it may or may not be disposed after placing the fill material 2102 between the substrate 102 and the solid particle emission device 152.

If a second sacrificial mask 902 is used to pattern the second layer 212, the second sacrificial mask 902 may or may be disposed over the filler 2102, e.g. over the first target material 202t. Optionally, the second sacrificial mask 902 may be spaced from the first target material 202t, e.g. by means of the filling material 2102 or by means of the second

Target material 212t. In other words, between the second sacrificial mask 902 and the first target material 202t, the filler material 2102 or the second target material 212t may or may not be arranged.

According to various embodiments, the method in 2100b may include: coating the second layer 212 with a third layer 222. The third layer 222 may optionally be patterned as described above, e.g. by means of a sacrificial mask 902 and / or by means of an exchange mask 502.

The structured second layer 212 may include a plurality of second openings 214o.

According to various embodiments, the method in 2100c may include forming a layer stack having multiple (e.g., two, three, or more) layers, each layer being patterned by a method according to various embodiments. According to various embodiments, the first structured layer 202 or its first target material 202t may have greater electrical conductivity than the second structured layer 212 and / or as the third structured layer 222. For example, a first structured layer 202 may comprise an electrically conductive first target material 202t or be formed from it, eg a metal or carbon in a carbon modification (e.g., carbon black or graphite). Clearly, the first target material 202t may comprise or be formed from an electrically active material.

For example, a second patterned layer 212 may be an ion-storing second

Target material 212t or formed therefrom, e.g. an active material (e.g., a cathode active material) such as NMC, LCO (lithium cobalt oxide) and / or LFP. Illustratively, the second target material 212t may comprise or be formed from a capacitively active material.

Alternatively, the second patterned layer 212 may include or be formed from an anode active material, e.g. Comprising or formed from silicon, e.g. in the form of silicon particles 104t.

Alternatively or additionally, a third patterned layer 222 may include or be formed from an ion-conducting third target material 222t, e.g. a solid electrolyte such as

for example, LiPON (lithium-phosphorus-oxinitride). According to various embodiments, the target materials 202t, 212t, 222t may differ from each other in at least their chemical composition, chemical Reactivity, their worth conductivity, their electrical conductivity, their thickness and / or their roughness.

As an alternative or in addition to the third structured layer 222, it is also possible to use a liquid electrolyte which optionally penetrates into the second structured layer 212 when it is porous.

The substrate 102 may optionally include or be formed of an energy storage electrode, e.g. its current collector (also called current collector).

Illustratively, the first patterned layer 202 may better electrically couple the second target material 222t (e.g., the active material) to the substrate 102 (e.g., a current collector) than a conventional smooth layer. FIGS. 22 and 22B each illustrate a method of patterning a layer according to various embodiments in a schematic side view or a cross-sectional view (as viewed along a main processing side 102t of the substrate 102).

According to various embodiments, the substrate 102 at 2200a may include or be formed from a circuit board 2112. The layer 202 to be structured may include or be formed from a metallization.

After patterning the layer 202 (i.e., when the patterned layer 202 is formed), the layer 202 may include a plurality of traces 2104. The plurality of tracks 2104 may electrically conductively connect at least two contact areas 2104a, 2104b, 2104c of the circuit board 2112. For example, the circuit board 2112 may include or may be formed from a printed circuit board 2112.

The printed circuit board 2112 may comprise or be formed from an electrically insulating material in or on which the electrically conductive connections 2104 (printed conductors 2104) may or may be formed. The electrically insulating material may optionally comprise a fiber reinforced plastic or a kraft paper. The plurality of interconnects 2104 may comprise or be formed from copper, eg, at a distance of 35 μm or less from each other. At least one contact region 2104a, 2104b, 2104c of the printed circuit board 2112 may be arranged to receive at least one electronic component, eg a chip. For example, the at least one component can be soldered to the at least one contact region 2104a, 2104b, 2104c by means of soldering surfaces (contact pads) or by means of soldering pads. According to various embodiments, the substrate 102 at 2200b may include or be formed from an electrode 2212 of a capacitor. The layer 202 to be patterned may provide functionalization of the substrate 102. The substrate 202 may include or be formed of a metal, eg, copper.

The capacitor may comprise two electrodes 2212, 2222, which are electrically isolated from each other, e.g. by means of a dielectric 2252. At least one of the two electrodes 2212, 2222 has a layer 202 structured according to various embodiments. The layer 202 may include or may be formed from a plurality of target solid particles 104t. The target solid particles 104t may include or be formed from an electrode material, e.g. Carbon in a carbon modification (e.g., coal) and / or titanium.

According to various embodiments, the substrate 102 at 2200c may include or be formed from a solar cell 2220, e.g. a thin film solar cell. The solar cell 2220 may comprise a semiconductor layer (e.g., a silicon layer) in which a pn junction is formed, e.g. a laterally extending pn interface. The solar cell 2220 may be used to convert

Radiant energy, e.g. Sunlight, be set up in electrical energy. The patterned layer 202 may provide for contacting the solar cell 2220.

For example, the patterned layer 202 may include or may be formed from a plurality of busbars 2202b. The patterned layer 202 may include or be formed from a metal. Optionally, the patterned layer 202 may include a plurality of metal fingers 2202f. Alternatively or additionally, the patterned layer 202 may comprise or be formed of a transparent electrically conductive oxide (also referred to as TCO), e.g. Indium tin oxide (ITO), fluorine-tin oxide

(FTO), aluminum-zinc-oxide (AZO) and / or antimony-tin-oxide (ATO).

According to various embodiments, a patterned layer 202 may be provided that has a high specific surface area. The patterned layer 202 does not necessarily have high edge sharpness, so the one described herein

Subtraction lithography can be simpler and more cost-effective or can be. For example, due to the explosive transfer of the sacrificial material 202o to the gaseous state, local fractal structures may or may not be created in the target material 202t that will remain and further enhance the increase in the surface area of the layer 202. In the following, various examples will be described which relate to what has been described above and illustrated in the figures.

Example 1 is a method 200a, 200c for forming a patterned layer 202 on a substrate 102, the method comprising coating the substrate 102 with a layer 202 to be patterned comprising a target material 202t and a sacrificial material 202o, wherein the sacrificial material 202o is placed in front of the target material 202t and / or simultaneously with it over the substrate 102; wherein arranging the

Sacrificial material 202o and / or the target material 202t has to arrange solid particles 104 over the substrate 102; and removing the sacrificial material 202o such that a plurality of regions 204 of the layer 202 are opened.

Example 2 is a method 200 a, 200 c according to Example 1, wherein the target material 202 t has a larger particle density than the sacrificial material 202 o and / or as the substrate 102.

Example 3 is a method 200 a, 200 c according to Example 1, wherein the sacrificial material 202 o has a larger particle density than the target material 202 t and / or as the substrate 102.

Example 4 is a method 200a, 200c according to any one of Examples 1 to 3, wherein in the coating, the target material 202t remains uncovered by the sacrificial material 202o.

Example 5 is a method 200a, 200c according to any one of examples 1 to 4, wherein the

Coating the sacrificial material 202o arranged in a plurality of mutually separated regions 204 of the layer 202 and between them and / or over this, the target material 202t is arranged.

Example 6 is a method 200a, 200c according to one of Examples 1 to 5, wherein the removal of the sacrificial material 202o takes place by at least partially removing it into a gaseous state

Aggregate state is transferred.

Example 7 is a method 200 a, 200 c according to one of Examples 1 to 6, wherein the removal of the sacrificial material 202o by means of irradiation 402 takes place.

Example 8 is a method 200a, 200c according to one of Examples 1 to 7, wherein the

Solid particles 104 are placed in a vacuum over the substrate 102. Example 9 is a method 200 a, 200 c according to one of examples e 1 to 8, wherein the sacrificial material 202 o and / or the target material 202 t is arranged above the substrate 102 by means of a printing process. Example 10 is a method 200a, 200c according to any one of Examples 1 to 9, wherein a temperature at which the sacrificial material 202o turns into a gaseous state is smaller than a temperature at which the target material 202t becomes a gaseous state.

Example 11 is a method 200 a, 200 c according to one of examples 1 to 10, wherein the substrate 102 has an electrode 1012, 1022, 2212, 2222 of an energy store.

Example 12 is a method 200 a, 200 c according to one of examples 1 to 10, wherein the substrate 102 has a solar cell 2220. Example 13 is a method 200a, 200c according to one of Examples 1 to 10, wherein the

The method further comprises: forming a capacitive area sensor by means of the target material 202t.

Example 14 is a method 200a, 200c for forming a patterned layer 202, the method comprising: coating the substrate 102 with a layer 202 to be patterned comprising a target material 202t and a sacrificial material 202o, wherein in the coating the sacrificial material 202o precedes Target material 202t and / or is arranged simultaneously with this over the substrate 102; wherein the sacrificial material 202o turns into a gaseous state at a lower temperature and / or pressure than the target material 202t; thermally transferring the sacrificial material 202o into the gaseous state so that the plurality of regions 204 of the layer 202 are opened.

Example 15 is a method 200a, 200c for forming a patterned layer 202, the method comprising: placing a substrate 102 in a vacuum chamber; Generating a stream of solid particles 104 from a source region toward the substrate 102; and placing a mask 502, 902 between the substrate 102 and the source region, the mask 502, 902 having one or more openings.

Example 16 is a solid particle emission device for coating a substrate 102, wherein the solid particle emission device comprises: a container 106 having a region for receiving solid particles 104; a positioning device for positioning a substrate 102 having a substrate surface of the substrate 102 toward the region; at least one electron source 112 for introducing electrons into the Solid particles 104; a controller 108 configured to control an electrostatic charge of the solid particles 104 such that a force caused by the electrostatic charge separates the solid particles 104 and accelerates toward the substrate surface of the substrate 102 to coat the substrate surface with at least a portion of the separated solid particles 104 ; and a mask 502 which is interposed between the

Positioning device and the container 106 is arranged.

Example 17 is a coating arrangement 1300a, 1300b for coating a substrate 102, the coating arrangement comprising: a vacuum chamber in which a coating area 306b and a structuring area 308b are arranged; a solid particle emitting device for emitting solid particles 104 into the coating region 306b; a positioning device 518, 508, 502a, 502b for transporting a substrate 102 between the coating area 306b and the patterning area 308b; a thermal structuring device 308 for removing a sacrificial material 202o from the substrate 102 in the patterning region.

Claims

claims

A method (200a, 200c) of forming a patterned layer (202) on a substrate (102), the method comprising:

Coating the substrate (102) with a layer (202) to be patterned, which has a target material (202t) and a sacrificial material (202o),

Wherein, in the coating, the sacrificial material (202o) is placed in front of and / or simultaneously with the target material (202t) over the substrate (102);

Wherein arranging the sacrificial material (202o) and / or the target material (202t) comprises disposing a plurality of solid particles (104) over the substrate (102), the plurality of solid particles disposed over the substrate being from a particle stream; and

• removing the sacrificial material (202o) so that multiple areas (204) of the layer (202) are opened.

2. Method (200a, 200c) according to claim 1,

wherein the target material (202t) has a larger particle density than the sacrificial material (202o) and / or as the substrate (102).

3. Method (200a, 200c) according to claim 1,

wherein the sacrificial material (202o) has a larger particle density than the target material (202t) and / or as the substrate (102).

4. Method (200a, 200c) according to one of claims 1 to 3,

wherein, in the coating, the target material (202t) remains uncovered by the sacrificial material (202o).

5. Method (200a, 200c) according to one of claims 1 to 4,

wherein, during the coating, the sacrificial material (202o) is arranged in a plurality of mutually separated regions (204) of the layer (202) and the target material (202t) is arranged between these and / or above them.

6. Method (200a, 200c) according to one of claims 1 to 5,

wherein the removal of the sacrificial material (202o) takes place by at least partially converting it into a gaseous state of aggregation.

7. Method (200a, 200c) according to one of claims 1 to 6, wherein the removal of the sacrificial material (202o) is by means of irradiation (402).

Method (200a, 200c) according to one of claims 1 to 7,

wherein the solid particles (104) are placed in a vacuum over the substrate (102).

Method (200a, 200c) according to one of claims 1 to 8,

wherein the sacrificial material (202o) and / or the target material (202t) by means of a

Printing process over the substrate (102) is arranged.

Method (200a, 200c) according to one of Claims 1 to 9,

wherein a temperature at which the sacrificial material (202o) in a gaseous

Aggregate state passes, is less than a temperature at which the target material (202t) passes into a gaseous state of aggregation.

The method (200a, 200c) according to one of claims 1 to 10, comprising arranging:

Generating the particle stream from a source region in the direction of the substrate (102); and

Arranging a mask (502, 902) between the substrate (102) and the

Source area, wherein the mask (502, 902) has one or more openings

Method (200a, 200c) according to one of claims 1 to 11,

wherein the substrate (102) comprises an electrode (1012, 1022, 2212, 2222) of an energy store.

Method (200a, 200c) according to one of claims 1 to 11,

wherein the substrate (102) comprises a solar cell (2220).

The method (200a, 200c) of any one of claims 1 to 11, the method further comprising:

Forming a capacitive area sensor by means of the target material (202t).

A method (200a, 200c) of forming a patterned layer (202), the method comprising:

Coating the substrate (102) with a layer (202) to be patterned, which has a target material (202t) and a sacrificial material (202o), wherein, in the coating, the sacrificial material (202o) is placed in front of and / or simultaneously with the target material (202t) over the substrate (102);

wherein the sacrificial material (202o) changes to a gaseous state at a lower temperature and / or pressure than the target material (202t);

Thermal transfer of the sacrificial material (202o) in the gaseous

Aggregate state, so that the multiple areas (204) of the layer (202) are opened.

Coating arrangement (1300a, 1300b) for coating a substrate (102), the coating arrangement comprising:

A vacuum chamber in which a coating area (306b) and a

Structuring area (308b) are arranged;

A solid particle emission device for emitting solid particles (104) into the coating region (306b);

A positioning device (518, 508, 502a, 502b) for transporting a substrate (102) between the coating area (306b) and

Structuring area (308b);

A thermal patterning device (308) for removing a sacrificial material (202o) from the substrate (102) in the patterning region.

A coating arrangement (1300a, 1300b) according to claim 16, comprising the solid particle emission device:

A container (106) having a region for receiving solid particles (104);

A positioning device for positioning a substrate (102) with a substrate surface of the substrate (102) in the direction of the region;

At least one electron source (112) for introducing electrons into the

Solid particles (104);

A controller (108) arranged to control an electrostatic charge of the solid particles (104) such that a force caused by the electrostatic charge separates the solid particles (104) from each other and towards the

Substrate surface of the substrate (102) accelerates to coat the

Substrate surface with at least a portion of the separated

Solid particles (104); and

A mask (502) disposed between the positioning device and the container (106).