DE102016107802A1 - Verfahren zur Herstellung rückseitenkontaktierter Solarzellen aus kristallinem Silizium - Google Patents
Verfahren zur Herstellung rückseitenkontaktierter Solarzellen aus kristallinem Silizium Download PDFInfo
- Publication number
- DE102016107802A1 DE102016107802A1 DE102016107802.6A DE102016107802A DE102016107802A1 DE 102016107802 A1 DE102016107802 A1 DE 102016107802A1 DE 102016107802 A DE102016107802 A DE 102016107802A DE 102016107802 A1 DE102016107802 A1 DE 102016107802A1
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- laser
- solar cell
- layer
- microns
- doping
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- 238000000034 method Methods 0.000 title claims description 39
- 230000008569 process Effects 0.000 title claims description 15
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims description 6
- 238000002360 preparation method Methods 0.000 title claims 2
- 238000000608 laser ablation Methods 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000011888 foil Substances 0.000 claims description 13
- 239000002243 precursor Substances 0.000 claims description 13
- 239000002019 doping agent Substances 0.000 claims description 9
- 238000002048 anodisation reaction Methods 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 239000010410 layer Substances 0.000 description 74
- 229910052710 silicon Inorganic materials 0.000 description 36
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- 235000012431 wafers Nutrition 0.000 description 28
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000001459 lithography Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
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- 238000009413 insulation Methods 0.000 description 4
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- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
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- 239000007787 solid Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
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- 230000001678 irradiating effect Effects 0.000 description 2
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- 239000005360 phosphosilicate glass Substances 0.000 description 2
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- 229910052814 silicon oxide Inorganic materials 0.000 description 2
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- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
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- 238000003486 chemical etching Methods 0.000 description 1
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- 239000011247 coating layer Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- OYLRFHLPEAGKJU-UHFFFAOYSA-N phosphane silicic acid Chemical compound P.[Si](O)(O)(O)O OYLRFHLPEAGKJU-UHFFFAOYSA-N 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/164—Polycrystalline semiconductors
- H10F77/1642—Polycrystalline semiconductors including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
- H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
- H10F77/937—Busbar structures for modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102016107802.6A DE102016107802A1 (de) | 2016-04-27 | 2016-04-27 | Verfahren zur Herstellung rückseitenkontaktierter Solarzellen aus kristallinem Silizium |
| EP17716901.8A EP3449512B1 (de) | 2016-04-27 | 2017-04-12 | Verfahren zur herstellung rückseitenkontaktierter solarzellen aus kristallinem silizium |
| JP2018556427A JP2019515498A (ja) | 2016-04-27 | 2017-04-12 | 背面コンタクト太陽電池を結晶シリコンから製造する方法 |
| PCT/EP2017/058746 WO2017186488A1 (de) | 2016-04-27 | 2017-04-12 | Verfahren zur herstellung rueckseitenkontaktierter solarzellen aus kristallinem silizium |
| CN201780026081.4A CN109314151A (zh) | 2016-04-27 | 2017-04-12 | 由晶体硅制备背表面触点太阳能电池的方法 |
| US16/096,313 US20190348560A1 (en) | 2016-04-27 | 2017-04-12 | Method for producing rear surface contact solar cells from crystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102016107802.6A DE102016107802A1 (de) | 2016-04-27 | 2016-04-27 | Verfahren zur Herstellung rückseitenkontaktierter Solarzellen aus kristallinem Silizium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102016107802A1 true DE102016107802A1 (de) | 2017-11-02 |
Family
ID=58537004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102016107802.6A Withdrawn DE102016107802A1 (de) | 2016-04-27 | 2016-04-27 | Verfahren zur Herstellung rückseitenkontaktierter Solarzellen aus kristallinem Silizium |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20190348560A1 (enExample) |
| EP (1) | EP3449512B1 (enExample) |
| JP (1) | JP2019515498A (enExample) |
| CN (1) | CN109314151A (enExample) |
| DE (1) | DE102016107802A1 (enExample) |
| WO (1) | WO2017186488A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2019249263A1 (en) * | 2018-04-06 | 2020-11-05 | Maxeon Solar Pte. Ltd. | Local metallization for semiconductor substrates using a laser beam |
| CN109192809B (zh) * | 2018-07-20 | 2019-10-11 | 常州大学 | 一种全背电极电池及其高效陷光和选择性掺杂制造方法 |
| RU2724142C1 (ru) * | 2019-12-17 | 2020-06-22 | Акционерное общество "ОКБ-Планета" АО "ОКБ-Планета" | Способ получения различных видов морфологии поверхности карбида кремния |
| CN114038921B (zh) * | 2021-11-05 | 2024-03-29 | 晶科能源(海宁)有限公司 | 太阳能电池及光伏组件 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004036220A1 (de) | 2004-07-26 | 2006-03-23 | Jürgen H. Werner | Laserdotierung von Festkörpern mit einem linienfokussierten Laserstrahl und darauf basierende Herstellung von Solarzellen-Emittern |
| WO2006042698A1 (de) | 2004-10-14 | 2006-04-27 | Institut Für Solarenergieforschung Gmbh | Verfahren zur kontakttrennung elektrisch leitfähiger schichten auf rückkontaktierten solarzellen und entsprechende solarzelle |
| WO2007081510A2 (en) | 2005-12-21 | 2007-07-19 | Sunpower Corporation | Back side contact solar cell structures and fabrication processes |
| US20100024881A1 (en) * | 2006-12-22 | 2010-02-04 | Advent Solar, Inc. | Interconnect Technologies for Back Contact Solar Cells and Modules |
| WO2015047952A1 (en) | 2013-09-27 | 2015-04-02 | Sunpower Corporation | Metallization of solar cells using metal foils |
| WO2015071217A1 (de) | 2013-11-15 | 2015-05-21 | Universitaet Stuttgart | Verfahren zur herstellung rückseitenkontaktierter solarzellen aus kristallinem silizium |
| DE112013006103T5 (de) * | 2012-12-21 | 2015-09-17 | Sunpower Corp. | Metallfolienunterstützte Herstellung von Dünnsilizium-Solarzellen |
| US20150280027A1 (en) * | 2014-03-28 | 2015-10-01 | Matthieu Moors | Conversion of metal seed layer for buffer material |
| US20160020343A1 (en) | 2014-07-15 | 2016-01-21 | Natcore Technology, Inc. | Laser-transferred ibc solar cells |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9455362B2 (en) * | 2007-10-06 | 2016-09-27 | Solexel, Inc. | Laser irradiation aluminum doping for monocrystalline silicon substrates |
| US20100294349A1 (en) * | 2009-05-20 | 2010-11-25 | Uma Srinivasan | Back contact solar cells with effective and efficient designs and corresponding patterning processes |
| CN101794833A (zh) * | 2010-03-03 | 2010-08-04 | 中国科学院电工研究所 | 一种背表面电介质钝化的太阳电池及其制备方法 |
| CN102208493B (zh) * | 2011-05-20 | 2012-12-19 | 上海采日光伏技术有限公司 | 一种全背电极太阳能电池的制作方法 |
| AU2012294932B2 (en) * | 2011-08-09 | 2016-08-11 | Solexel, Inc. | High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers |
| WO2013109583A2 (en) * | 2012-01-16 | 2013-07-25 | Ferro Corporation | Non fire-through aluminum conductor reflector paste for back surface passivated cells with laser fired contacts |
-
2016
- 2016-04-27 DE DE102016107802.6A patent/DE102016107802A1/de not_active Withdrawn
-
2017
- 2017-04-12 WO PCT/EP2017/058746 patent/WO2017186488A1/de not_active Ceased
- 2017-04-12 US US16/096,313 patent/US20190348560A1/en not_active Abandoned
- 2017-04-12 JP JP2018556427A patent/JP2019515498A/ja not_active Withdrawn
- 2017-04-12 CN CN201780026081.4A patent/CN109314151A/zh active Pending
- 2017-04-12 EP EP17716901.8A patent/EP3449512B1/de active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004036220A1 (de) | 2004-07-26 | 2006-03-23 | Jürgen H. Werner | Laserdotierung von Festkörpern mit einem linienfokussierten Laserstrahl und darauf basierende Herstellung von Solarzellen-Emittern |
| WO2006042698A1 (de) | 2004-10-14 | 2006-04-27 | Institut Für Solarenergieforschung Gmbh | Verfahren zur kontakttrennung elektrisch leitfähiger schichten auf rückkontaktierten solarzellen und entsprechende solarzelle |
| US20110053312A1 (en) * | 2004-10-14 | 2011-03-03 | Institut Fuer Solarenergieforschung Gmbh | Method for the contact separation of electrically-conducting layers on the back contacts of solar cells and corresponding solar cell |
| WO2007081510A2 (en) | 2005-12-21 | 2007-07-19 | Sunpower Corporation | Back side contact solar cell structures and fabrication processes |
| US20100024881A1 (en) * | 2006-12-22 | 2010-02-04 | Advent Solar, Inc. | Interconnect Technologies for Back Contact Solar Cells and Modules |
| DE112013006103T5 (de) * | 2012-12-21 | 2015-09-17 | Sunpower Corp. | Metallfolienunterstützte Herstellung von Dünnsilizium-Solarzellen |
| WO2015047952A1 (en) | 2013-09-27 | 2015-04-02 | Sunpower Corporation | Metallization of solar cells using metal foils |
| WO2015071217A1 (de) | 2013-11-15 | 2015-05-21 | Universitaet Stuttgart | Verfahren zur herstellung rückseitenkontaktierter solarzellen aus kristallinem silizium |
| US20150280027A1 (en) * | 2014-03-28 | 2015-10-01 | Matthieu Moors | Conversion of metal seed layer for buffer material |
| US20160020343A1 (en) | 2014-07-15 | 2016-01-21 | Natcore Technology, Inc. | Laser-transferred ibc solar cells |
Non-Patent Citations (5)
| Title |
|---|
| 3) SCHNEIDERLÖCHNER, E.: Laserstrahlverfahren zur Fertigung kristalliner Silizium-Solarzelle. Freiburg im Briesgau, 2004. * |
| 3) SCHNEIDERLÖCHNER, E.: Laserstrahlverfahren zur Fertigung kristalliner Silizium-Solarzelle. Freiburg im Briesgau, 2004. |
| M. Dahlinger, et al., „Laser Doped Screen-printed Back Contact Solar Cells Exceeding 21% Efficiency", Energy Procedia, Vol. 55, September 2014, S. 410–415 |
| M. Dahlinger, et al., „Laser-Doped Back-Contact Solar Cells", IEEE Journal of Photovoltaics, Vol. 5, No. 3, Mai 2015, S. 812–818 |
| P. Verlinden et al., „High Efficiency large Area Back Contact Concentrator Solar Cells with a Multilevel Interconnection", International Journal of Solar Energy, 1988, Vol. 6, S. 347–366 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20190348560A1 (en) | 2019-11-14 |
| CN109314151A (zh) | 2019-02-05 |
| WO2017186488A1 (de) | 2017-11-02 |
| EP3449512A1 (de) | 2019-03-06 |
| EP3449512B1 (de) | 2020-01-22 |
| JP2019515498A (ja) | 2019-06-06 |
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