DE102016006064A1 - Manufacturing method for a thermoelectric device - Google Patents

Abstract

The invention relates to a production method for a thermoelectric device (10), comprising the steps of: providing a first carrier layer (12), which is formed at least in sections from a metal or a metal alloy, providing a first dielectric oxide layer (16) on the surface of the first Carrier layer (12), providing a first electrically conductive bridge layer (19a, 19b, 20a-20g) on the first dielectric oxide layer (16), and arranging a plurality of differently doped semiconductors (24a-24p) on the first electrically conductive bridge layer (19a , 19b, 20a-20g) such that the semiconductors (24a-24p) are respectively electrically conductively connected on a first side to the first bridge layer (19a, 19b, 20a-20g).

Description

The invention relates to a manufacturing method for a thermoelectric device, a thermoelectric device, a thermoelectric generator, a temperable cup holder, a Batterietem periervorrichtung and an air conditioning device for a vehicle seat.

Thermoelectric devices are used to convert thermal energy into electrical energy or electrical energy into thermal energy. When converting thermal energy to electrical energy, thermoelectric devices take advantage of the Seebeck effect. When converting electrical energy to thermal energy, thermoelectric devices take advantage of the Peltier effect.

To implement these effects, thermoelectric devices usually have two opposite and spaced-apart carrier layers, wherein a plurality of p- and n-doped semiconductors is arranged between the two carrier layers. The differently doped semiconductors are alternately connected to one another on opposite sides via metal bridges, wherein the metal bridges are fastened to the carrier layers.

If a suitable temperature gradient is provided between the opposite sides of the semiconductor, a voltage potential forms. Heat is then absorbed on a first side of the semiconductor, whereby electrons reach the higher-lying conduction band of the following semiconductor via a metal bridge. On a second opposite side of the semiconductors, the electrons release heat energy, whereby they pass through a metal bridge to the following semiconductor, which has a lower energy level. In this way, an electric current flow sets.

Conversely, a temperature gradient can be created between the opposite sides of the semiconductors by providing current flow through the semiconductors and their metal bridges.

For electrical insulation of the metal bridges two different variants are known.

In a first solution, the carrier layers, on which the metal bridges are arranged, made of an electrically non-conductive material, such as ceramic. Although this solution provides for reliable electrical insulation of the metal bridges, but requires a sticking or jamming when attaching the thermoelectric device to an object. However, the adhesion or jamming of a thermoelectric device impairs the heat transfer and thus the effectiveness of the thermoelectric device.

In a second solution, the carrier layers are each coated with an epoxy-based insulation layer to electrically insulate the metal bridges. This allows the formation of the carrier layers of electrically conductive metals or metal alloys, so that an effective heat transfer can be achieved by welding the carrier layers of thermoelectric devices with corresponding objects to be tempered. However, the application of such an insulating layer leads to a significant increase in the production costs and thus also to an increase in production costs. In addition, the additional insulation layers cause an increased height.

It is an object of the present invention to provide a way to provide thermoelectric devices with a metallic outer surface without causing a significant increase in production costs.

The object is achieved with a production method for a thermoelectric device, in which a first carrier layer, which is formed at least in sections from a metal or a metal alloy, a first dielectric oxide layer on the surface of the first carrier layer and a first electrically conductive bridge layer on the first dielectric Oxide layer can be provided and wherein a plurality of differently doped semiconductors are arranged on the first electrically conductive bridge layer such that the semiconductors are each electrically connected on a first side with the first bridge layer.

The invention makes use of the finding that an epoxide-based insulation layer can be replaced in a surprisingly simple manner by a dielectric oxide layer and, furthermore, the electrical insulation of the electrically conductive bridge layer is ensured. Dielectric, so electrically non-conductive oxide layers can be generated on metallic surfaces without a large manufacturing effort and at the same time with a low layer thickness. The electrical insulation by means of the dielectric oxide layer thus makes it possible to use a metallic carrier layer which can be welded to other objects without great effort.

The first dielectric oxide layer is preferably on the entire surface or alternatively on a portion of the surface of the first Carrier layer provided. Also, the first electrically conductive bridge layer is preferably provided on the entire first dielectric oxide layer or alternatively on a portion of the first dielectric oxide layer.

In a preferred embodiment of the production method according to the invention, a second carrier layer, which is likewise formed at least in sections from a metal or a metal alloy, a second dielectric oxide layer on the surface of the second carrier layer and / or a second electrically conductive bridge layer on the second dielectric oxide layer. Preferably, the plurality of differently doped semiconductors are arranged on the second electrically conductive bridge layer in such a way that the semiconductors are each electrically conductively connected to the second bridge layer on a second side and all the semiconductors are electrically conductively connected to one another by the first bridge layer and the second bridge layer ,

The second dielectric oxide layer is preferably provided on the entire surface or alternatively on a portion of the surface of the second carrier layer. Also, the second electrically conductive bridge layer is preferably provided on the entire second dielectric oxide layer or alternatively on a portion of the second dielectric oxide layer.

In an advantageous development of the production method according to the invention, the first carrier layer is formed at least in sections from aluminum or an aluminum alloy. Alternatively or additionally, the provision of the first dielectric oxide layer on the surface of the first carrier layer comprises anodizing the surface of the first carrier layer. Preferably, the second carrier layer is also at least partially formed of aluminum or an aluminum alloy and / or the provision of the second dielectric oxide layer on the surface of the second carrier layer comprises the anodic oxidation of the surface of the second carrier layer. The anodic oxidation of the surface of the first support layer and / or the anodic oxidation of the surface of the second support layer preferably comprises immersing the first support layer and / or the second support layer in an oxidation bath and providing a current flow between the first support layer and one disposed in the oxidation bath Electrode and / or between the second carrier layer and an electrode arranged in the oxidation bath.

Alternatively, the anodic oxidation of the surface of the first carrier layer and / or the anodic oxidation of the surface of the second carrier layer comprises spraying the first carrier layer and / or the second carrier layer with an electrolyte material and providing a current flow between the nozzle, from which the electrolyte material emerges. and the first carrier layer and / or the second carrier layer.

In a further embodiment of the production method according to the invention, the provision of the first dielectric oxide layer on the surface of the first carrier layer comprises the plasma-electrolytic oxidation of the surface of the first carrier layer. Preferably, also providing the second dielectric oxide layer on the surface of the second carrier layer comprises plasma electrolytic oxidation of the surface of the second carrier layer. In plasma electrolytic oxidation (PEO), a metal surface is converted by plasma discharge into a dense, atomically adhering ceramic layer. By plasma electrolytic oxidation can produce surfaces with a hardness of up to 1200 HV and excellent adhesive properties. Furthermore, the ceramic layer produced acts as corrosion protection. In addition, can be produced by plasma electrolytic oxidation layer thicknesses of less than 100 microns, so that the height of the thermoelectric device can be further reduced.

In another preferred embodiment of the production method according to the invention, the provision of the first dielectric oxide layer on the surface of the first carrier layer comprises producing a eutectic melt layer on the surface of the first carrier layer, preferably by means of the direct copper bonding method. In particular, the provision of the second dielectric oxide layer on the surface of the second carrier layer likewise comprises the production of a eutectic melt layer on the surface of the second carrier layer, preferably by means of the direct copper bonding method. The eutectic melt layer is preferably produced by the oxidation of one or more copper foils or by the supply of oxygen during a high temperature process. This eutectic melt layer reacts with the alumina and creates a thin copper-aluminum spinel layer.

In a further preferred embodiment of the production method according to the invention, the first electrically conductive bridge layer is joined to the first dielectric oxide layer, preferably using a soldering method. The joining takes place in such a way that the dielectric oxide layer remains intact and retains its electrical insulating properties. Preferably, the second electrically conductive bridge layer is also joined to the second dielectric oxide layer, preferably using a soldering process. Again, the joining takes place in such a way that the dielectric oxide layer remains intact and retains its electrical insulation properties.

The production method according to the invention is also advantageously further developed in that the first electrically conductive bridge layer and / or the second electrically conductive bridge layer each have a plurality of bridge sectors spaced apart from one another. The respective bridge sectors are preferably designed to connect two differently doped semiconductors in an electrically conductive manner. The bridge sectors thus each serve as an "electrical bridge" between two differently doped semiconductors. In order for the bridge sectors of the first electrically conductive bridge layer and the bridge sectors of the second electrically conductive bridge layer to allow current to flow through all the semiconductors of the thermoelectric device, the arrangement and geometry of the bridge sectors of the first electrically conductive bridge layer and the arrangement and geometry of the bridge sectors of the second are electrically conductive bridge layer matched. For this purpose, the production method according to the invention preferably comprises the step of producing the spaced-apart bridge sectors of the first electrically conductive bridge layer by machining, preferably by milling, the first electrically conductive bridge layer, and / or the step of producing the spaced-apart bridge sectors of the second electrically conductive bridge layer machining, preferably by milling, the second electrically conductive bridge layer. The milling method allows precise and at the same time cost-effective chip removal and is therefore particularly suitable for the production of individual spaced apart bridge sectors.

Alternatively, the first electrically conductive bridge layer and / or the second electrically conductive bridge layer is formed as a film, in particular as a self-adhesive film.

Alternatively or additionally, the manufacturing method for providing the bridge sectors according to the invention comprises producing the spaced apart bridge sectors of the first electrically conductive bridge layer by etching a corresponding pattern on the first dielectric oxide layer and / or forming the spaced apart bridge sectors of the second electrically conductive bridge layer by etching a corresponding one Pattern on the second dielectric oxide layer. By using suitable etching stencils, corresponding patterns can thus be applied to the first dielectric bridge layer and / or the second dielectric bridge layer in a cost-effective and time-saving manner.

Alternatively or additionally, the manufacturing method for providing the bridge sectors according to the invention comprises forming the spaced bridge sectors of the first electrically conductive bridge layer by printing a corresponding pattern on the first dielectric oxide layer and / or forming the spaced apart bridge sectors of the second electrically conductive bridge layer by printing a corresponding one Pattern on the second dielectric oxide layer. Preferably, when printing the corresponding pattern, use is made of a 3D printer which applies the pattern in the desired thickness in one or more layers of material to the first dielectric oxide layer and / or the second dielectric oxide layer. By using a printing process, complex bridge geometries can be implemented without high production and cost expenditure.

In a further advantageous development, the production method according to the invention comprises the production of spaced apart bridge sectors of the first electrically conductive bridge layer by forming a corresponding pattern on the first dielectric oxide layer by physical vapor deposition and / or forming the spaced apart bridge sectors of the second electrically conductive bridge layer by forming a corresponding pattern on the second dielectric oxide layer by physical vapor deposition. The bridging sectors of the first electrically conductive bridge layer and / or the second electrically conductive bridge layer by means of physical vapor deposition are preferably produced by an evaporation method, such as thermal evaporation, electron beam evaporation, laser beam evaporation, arc vapor deposition or molecular beam epitaxy. Alternatively or additionally, the bridging sectors of the first electrically conductive bridge layer and / or the second electrically conductive bridge layer are provided by physical vapor deposition via sputtering, such as the ion beam assisted deposition (IBAD) method, ion plating or the ICBD method (US Pat. ionized cluster beam deposition).

Alternatively or additionally, the manufacturing method for providing the bridge sectors according to the invention comprises producing the spaced-apart bridge sectors of the first electrically conductive bridge layer by forming a corresponding pattern on the first dielectric oxide layer by chemical vapor deposition and / or producing the spaced-apart bridge sectors of the second electrically conductive bridge layer Generation of a corresponding pattern on the second dielectric oxide layer by means of chemical vapor deposition. The bridging sectors of the first electrically conductive bridge layer and / or the second electrically conductive bridge layer are preferably formed by plasma enhanced chemical vapor deposition, chemical vapor deposition at low pressure, chemical vapor deposition at atmospheric pressure, metalorganic chemical vapor deposition or chemical vapor infiltration.

In a particularly preferred embodiment of the production method according to the invention, the first electrically conductive bridge layer is formed from copper or a copper alloy. Alternatively or additionally, the second electrically conductive bridge layer is formed from copper or a copper alloy. Copper or copper alloys are particularly suitable for being joined to the first support layer and / or second support layer formed of aluminum or an aluminum alloy, without damaging the first dielectric oxide layer on the first support layer and / or the second dielectric oxide layer on the first second carrier layer takes place. Thus, the use of copper or a copper alloy reduces the risk that, during the joining of the first carrier layer to the first electrically conductive bridge layer and / or during the joining of the second carrier layer to the second electrically conductive bridge layer, the insulating properties of the first dielectric oxide layer and / or or the insulating properties of the second dielectric oxide layer are impaired or even canceled. The joining of the first carrier layer with the first electrically conductive bridge layer and / or the joining of the second carrier layer with the second electrically conductive bridge layer preferably takes place by means of active soldering, in particular using solders which have a titanium component. The joining of the first carrier layer with the first electrically conductive bridge layer and / or the joining of the second carrier layer with the second electrically conductive bridge layer can also be carried out by means of soft soldering, in particular using tin / lead-based soft solders.

The production method according to the invention is further developed by electroplating the first electrically conductive bridge layer, preferably to produce a nickel coating or a copper coating, and / or by electroplating the second electrically conductive bridge layer, preferably to produce a nickel coating or a copper coating. Galvanizing increases corrosion and wear protection. Further, with certain mating materials, the electrical conductivity can be improved by producing a nickel coating or a copper coating so that the effectiveness of the thermoelectric device is increased.

In a further advantageous embodiment of the manufacturing method according to the invention, the plurality of differently doped semiconductors are joined to the first electrically conductive bridge layer, preferably using a soldering method and / or joining the plurality of differently doped semiconductors to the second electrically conductive bridge layer, preferably using a soldering process. By joining the plurality of differently doped semiconductors with the first electrically conductive bridge layer and / or joining the plurality of differently doped semiconductors with the second electrically conductive bridge layer, on the one hand the heat transfer between the semiconductors and the respective electrically conductive bridge layer is increased and on the other hand the electrical Increased conductivity of the corresponding compound. Particularly suitable for joining the plurality of differently doped semiconductors with the first electrically conductive bridge layer and / or the second electrically conductive bridge layer are soldering methods. Soldering produces a robust and cost-effective cohesive connection, so that the stated advantages are achieved without a significantly increased production cost. Preferably, the soldering of the plurality of differently doped semiconductors with the first electrically conductive bridge layer and / or the second electrically conductive bridge layer takes place under compressive stress, whereby the quality of the connection can be further increased.

The object on which the invention is based is furthermore achieved by a thermoelectric device having a first carrier layer, a first dielectric oxide layer, a first electrically conductive bridge layer and a plurality of differently doped semiconductors. The first carrier layer is at least partially formed of metal or a metal alloy. The first dielectric oxide layer is disposed on the surface of the first carrier layer, and the first electrically conductive bridge layer is disposed on the first dielectric oxide layer. The plurality of differently doped semiconductors is on the arranged first electrically conductive bridge layer, that the semiconductors are each electrically connected on a first side with the first bridge layer. The thermoelectric device according to the invention can be used as a Peltier element for cooling or heating by means of electrical energy or as a Seebeck element in order to convert heat into electrical energy. Furthermore, the thermoelectric device according to the invention has a metallic outer surface, without causing a significant increase in production costs, as can be dispensed with an additional epoxy-based protective layer due to the dielectric oxide layer.

An advantageous embodiment of the thermoelectric device according to the invention comprises a second carrier layer, a second dielectric oxide layer and a second electrically conductive bridge layer. The second carrier layer is formed at least in sections from metal or a metal alloy. The second dielectric oxide layer is arranged on the surface of the second carrier layer and the second electrically conductive bridge layer is arranged on the second dielectric oxide layer. The plurality of differently doped semiconductors is arranged on the second electrically conductive bridge layer such that the semiconductors are each electrically conductively connected to the second bridge layer on a second side and all semiconductors are electrically conductively connected to one another by the first bridge layer and the second bridge layer.

In a preferred embodiment of the thermoelectric device according to the invention, the first carrier layer and / or the second carrier layer are formed at least in sections from aluminum or an aluminum alloy. Aluminum has excellent heat-conducting properties and can be bonded to other metals or metal alloys by means of various joining processes, for example welding, without significantly impairing the heat transport through the joint.

The inventive thermoelectric device is further developed in that the first electrically conductive bridge layer is soldered to the first dielectric oxide layer and / or the second electrically conductive bridge layer is soldered to the second dielectric oxide layer. The respective electrically conductive bridge layer is soldered to the corresponding dielectric oxide layer in such a way that the corresponding dielectric oxide layer was not damaged by the soldering process and has retained its electrical insulation properties.

In an embodiment of the thermoelectric device according to the invention, the first electrically conductive bridge layer and / or the second electrically conductive bridge layer each have a plurality of bridge sectors spaced apart from one another. The respective bridge sectors are preferably arranged to electrically connect two differently doped semiconductors to one another. The bridge sectors thus each serve as an "electrical bridge" between two differently doped semiconductors. In order for the bridge sectors of the first electrically conductive bridge layer and the bridge sectors of the second electrically conductive bridge layer to allow current to flow through all the semiconductors of the thermoelectric device, the arrangement and geometry of the bridge sectors of the first electrically conductive bridge layer and the arrangement and geometry of the bridge sectors of the second are electrically conductive bridge layer matched.

In a particularly preferred embodiment of the thermoelectric device according to the invention, the first electrically conductive bridge layer and / or the second electrically conductive bridge layer are formed from copper or a copper alloy. Copper or copper alloys are particularly suitable for being joined to the first support layer and / or second support layer formed of aluminum or an aluminum alloy, without damaging the first dielectric oxide layer on the first support layer and / or the second dielectric oxide layer on the first second carrier layer takes place. Thus, the thermoelectric device according to the invention thus has a significantly reduced risk of malfunction, since it does not damage the insulating oxide layer during manufacture.

In an alternative embodiment of the thermoelectric device according to the invention, the first electrically conductive bridge layer and / or the second electrically conductive bridge layer have a nickel coating or a copper coating. The nickel coating or the copper coating serves as corrosion and wear protection and increases the electrical conductivity of certain material combinations, so that the longevity and the effectiveness of the thermoelectric device are increased.

Also preferred is a thermoelectric device according to the invention, in which the plurality of differently doped semiconductors is soldered to the first electrically conductive bridge layer and / or to the second electrically conductive bridge layer. Through the solder joints, the heat transfer between the Semiconductors and the respective electrically conductive bridge layer increased and increases the electrical conductivity of the corresponding compound. The solder joint is a robust and inexpensive to produce cohesive connection and is therefore particularly suitable for joining the differently doped semiconductor with the first electrically conductive bridge layer and / or with the second electrically conductive bridge layer.

In a particularly preferred embodiment, the thermoelectric device is non-destructively deformable, in particular bendable, formed. Preferably, the thermoelectric device is non-destructive rotatable about multiple axes and / or non-destructively bendable in several directions. This is achieved, in particular, in that individual or all components and / or individual or all joint connections of the thermoelectric device are non-destructively deformable or spaced from each other such that deformation of the thermoelectric device without deformation of individual components, for example, the plurality of differently doped semiconductors , is possible. Preferably, the first carrier layer, the second carrier layer, the first dielectric oxide layer, the second dielectric oxide layer, the first electrically conductive bridge layer and / or the second electrically conductive bridge layer are formed as non-destructively deformable material layers. The non-destructive deformability allows the adaptation of the thermoelectric device to the geometry of other objects, for example the geometry of a beverage holder or a vehicle seat. In a cup holder or in a vehicle seat, the thermoelectric device can be used as a tempering device for heating or cooling. Furthermore, nondestructive ductility allows the attachment of the thermoelectric device to various types of electrical components, such as accumulators, or to heat-conducting fluid channels within a vehicle, such as the exhaust tract.

In an advantageous development of the thermoelectric device according to the invention, this has been produced by means of a manufacturing method for a thermoelectric device according to one of the embodiments described above. With regard to the advantages of such a thermoelectric device according to the invention, reference is made to the advantages of the production method according to the invention.

The object underlying the invention is also achieved by a thermoelectric generator, wherein the thermoelectric generator according to the invention comprises one or more thermoelectric devices according to one of the embodiments described above. With regard to the advantages of the thermoelectric generator according to the invention, reference is made to the advantages of the thermoelectric device according to the invention.

The object underlying the invention is also achieved by a temperable cup holder, wherein the temperable cup holder according to the invention comprises a receiving device and one or more thermoelectric devices designed as Peltier elements. The receiving device is adapted to receive a drinking vessel and provides a tempering for the drinking vessel ready. The one or more thermoelectric devices formed as Peltier elements are heat-transmitting coupled to the tempering and formed according to one of the embodiments described above. With regard to the advantages of the temperable beverage holder according to the invention, reference is made to the advantages of the thermoelectric device according to the invention.

The object on which the invention is based is also achieved by a battery temperature control device, wherein the battery temperature control device according to the invention comprises one or more thermoelectric devices designed as Peltier elements, which are designed according to one of the embodiments described above. With regard to the advantages of the battery temperature control device according to the invention, reference is made to the advantages of the thermoelectric device according to the invention.

A preferred embodiment of the battery temperature control device according to the invention comprises one or more storage units for electrical energy, wherein the one or more thermoelectric devices are heat-transmitting coupled to the one or more storage units. Preferably, the one or more thermoelectric devices are affixed to the one or more storage units, in particular by means of a welded connection, a solder connection, an adhesive connection, a screw connection or a clamp connection.

The object underlying the invention is also achieved by an air conditioning device for a vehicle seat, wherein the air conditioning device according to the invention comprises one or more formed as Peltier elements thermoelectric devices, which are formed according to one of the embodiments described above. With regard to the advantages of the air conditioning device according to the invention is referred to the advantages of the thermoelectric device according to the invention.

Hereinafter, preferred embodiments of the invention will be described and described with reference to the accompanying drawings. Showing:

1 an embodiment of the thermoelectric device according to the invention in a side view;

2a a first carrier layer of a thermoelectric device according to the invention;

2 B a second carrier layer of a thermoelectric device according to the invention;

2c a plurality of differently doped semiconductors of a thermoelectric device according to the invention;

3 a vehicle with a thermoelectric generator according to the invention;

4 an embodiment of the temperable beverage holder according to the invention;

5 a vehicle seat with an air conditioning device according to the invention; and

6 an embodiment of the method according to the invention as a block diagram.

1 shows a thermoelectric device according to the invention 10 with a first carrier layer 12 and a second carrier layer 14 , wherein the first carrier layer 12 and the second carrier layer 14 are each formed entirely of aluminum.

On the surface of the first carrier layer 12 , which is the second carrier layer 14 facing, is a first dielectric oxide layer 16 arranged. On the surface of the second carrier layer 14 , which is the first carrier layer 12 is facing, is a second dielectric oxide layer 18 arranged.

On the first dielectric oxide layer 16 is a first electrically conductive bridge layer 19a . 19b . 20a arranged, which two connections 19a . 19b and a bridge sector 20a having. On the second dielectric oxide layer 18 is a second electrically conductive bridge layer 22a . 22b arranged, which two spaced apart bridge sectors 22a . 22b having.

A total of four differently doped semiconductors 24a - 24d are on the first electrically conductive bridge layer 19a . 19b . 20a arranged such that the semiconductors 24a - 24d each on a first page with one of the connections 19a . 19b or the bridge sector 20a the first bridge layer 19a . 19b . 20a are electrically connected. The four differently doped semiconductors 24a - 24d are also on the second electrically conductive bridge layer 22a . 22b arranged such that the semiconductors 24a - 24d each on a second page with a bridge sector 22a . 22b the second bridge layer 22a . 22b are electrically connected.

The connections 19a . 19b and the bridge sector 20a the first electrically conductive bridge layer 19a . 19b . 20a are formed of copper, have a nickel coating and are covered with the first dielectric oxide layer 16 soldered. The bridge sectors 22a . 22b the second electrically conductive bridge layer 22a . 22b are formed of copper, have a nickel coating and are covered with the second dielectric oxide layer 18 soldered.

The semiconductors 24a . 24c are formed as n-doped semiconductor. The semiconductors 24b . 24d are formed as p-doped semiconductors. The semiconductor 24a is with the connection 19a and the bridge sector 22a soldered. The semiconductor 24b is with the bridge sector 22a and the bridge sector 20a soldered. The semiconductor 24c is with the bridge sector 20a and the bridge sector 22b soldered. The semiconductor 24d is with the bridge sector 22b and the connection 19b soldered.

The illustrated thermoelectric device 10 is by means of a manufacturing process for a thermoelectric device 10 according to any one of claims 1 to 9 has been prepared.

2a shows a first carrier layer 12 a thermoelectric device according to the invention. The first carrier layer 12 is formed entirely of an aluminum alloy. On the surface of the first carrier layer 12 is a first dielectric oxide layer 16 arranged. On the first dielectric oxide layer 16 is a first electrically conductive bridge layer 19a . 19b . 20a - 20g arranged, which two connections 19a . 19b and seven bridge sectors 20a - 20g having. The connections 19a . 19b and the bridge sectors 20a - 20g the first electrically conductive bridge layer 19a . 19b . 20a are formed of copper, have a nickel coating and are covered with the first dielectric oxide layer 16 soldered.

2 B shows a second carrier layer 14 a thermoelectric device according to the invention. The second carrier layer 14 is formed entirely of an aluminum alloy. On the surface of the second carrier layer 14 is a second dielectric oxide layer 18 arranged. On the second dielectric oxide layer 18 is a second electrically conductive bridge layer 22a - 22h arranged which eight bridge sectors 22a - 22h having. The bridge sectors 22a - 22h the second electrically conductive bridge layer 22a - 22h are formed of copper, have a nickel coating and are covered with the second dielectric oxide layer 18 soldered.

2c shows in total 16 differently doped semiconductors 24a - 24p , The differently doped semiconductors 24a - 24p are adapted to each on the first page with one of the connectors 19a . 19b or one of the seven bridge sectors 20a - 20g out 2a and on a second page with one of the bridge sectors 22a - 22h out 2 B to be connected.

The semiconductors 24a . 24c . 24e . 24g . 24i . 24k . 24m . 24o are formed as n-doped semiconductor. The semiconductors 24b . 24d . 24f . 24 hours . 24j . 24l . 24n . 24p are formed as p-doped semiconductors. After joining the in 2c illustrated semiconductors 24a - 24p with the in 2a and 2 B shown modules results in the following solder pattern: the semiconductor 24a is with the connection 19a and the bridge sector 22a soldered. The semiconductor 24b is with the bridge sector 22a and the bridge sector 20a soldered. The semiconductor 24c is with the bridge sector 20a and the bridge sector 22b soldered. The semiconductor 24d is with the bridge sector 22b and the bridge sector 20b soldered. The semiconductor 24e is with the bridge sector 20b and the bridge sector 22c soldered. The semiconductor 24f is with the bridge sector 22c and the bridge sector 20c soldered. The semiconductor 24g is with the bridge sector 20c and the bridge sector 22d soldered. The semiconductor 24 hours is with the bridge sector 22d and the bridge sector 20d soldered. The semiconductor 24i is with the bridge sector 20d and the bridge sector 22e soldered. The semiconductor 24j is with the bridge sector 22e and the bridge sector 20e soldered. The semiconductor 24k is with the bridge sector 20e and the bridge sector 22f soldered. The semiconductor 24 is with the bridge sector 22f and the bridge sector 20f soldered. The semiconductor 24m is with the bridge sector 20f and the bridge sector 22g soldered. The semiconductor 24n is with the bridge sector 22g and the bridge sector 20g soldered. The semiconductor 24o is with the bridge sector 20g and the bridge sector 22h soldered. The semiconductor 24p is with the bridge sector 22h and the connection 19b soldered.

3 shows a vehicle 26 with a thermoelectric generator according to the invention 28 , The thermoelectric generator 28 comprises a thermoelectric device 10 according to any one of claims 10 to 19. The thermoelectric device 10 is heat-conducting with the exhaust system of the vehicle 26 Connected and converts the heat released there into electrical energy by utilizing the Seebeck effect. The electrical energy generated in this way is by means of a memory 30 for electrical energy, for example a rechargeable battery based on lithium ions. The memory 30 for electrical energy, the stored electrical energy represents a consumer 32 inside the vehicle 26 to disposal.

4 shows a temperable cup holder according to the invention 34 , The temperature-controlled drink holder 34 includes a receiving device 36 , which is set up to hold two drinking vessels and each a tempering 38a . 38b for a drinking vessel. The drinking vessels may be, for example, cups or cans.

At the bottom of the receiving device 36 is in the range of tempering rooms 38a . 38b one each as a Peltier element 40a . 40d formed thermoelectric device welded. At the radially outer edge of the tempering 38a are two other formed as Peltier elements thermoelectric devices 40b . 40c arranged. At the radially outer edge of the tempering 38b are also two as Peltier elements 40e . 40f formed thermoelectric devices arranged.

The as Peltier elements 40b . 40c . 40e . 40f trained thermoelectric devices are non-destructively deformable, namely non-destructively bend formed.

The as Peltier elements 40a - 40c formed thermoelectric devices are heat transferring with the tempering 38a coupled. The as Peltier elements 40d - 40f formed thermoelectric devices are heat transferring with the tempering 38b coupled. All Peltier elements 40a - 40f are formed according to one of claims 10 to 19.

5 shows a vehicle seat 42 with an air conditioning device according to the invention 44 , The air conditioning device according to the invention 44 includes two as Peltier elements 46a . 46b formed thermoelectric devices. The as Peltier element 46a formed thermoelectric device is in the backrest of the vehicle seat 42 integrated. The as Peltier element 46b formed thermoelectric device is in the seat cushion of the vehicle seat 42 integrated. The two as Peltier elements 46a . 46b formed thermoelectric devices are formed according to any one of claims 10 to 19.

6 shows the manufacturing method according to the invention for a thermoelectric Contraption. The manufacturing process begins with the steps:
100 ) Providing a first support layer formed entirely of aluminum; and
102 ) Providing a first dielectric oxide layer on the surface of the first carrier layer.

The provision of the first dielectric oxide layer on the surface of the first carrier layer takes place via the following step:
104 ) Anodic oxidation of the surface of the first carrier layer.

After the first dielectric oxide layer has been produced, electrically conductive metal bridges are provided on the first carrier layer and joined with the following steps:
108 ) Plating a first electrically conductive bridge layer to produce a nickel coating;
108 ) Providing the coated first electrically conductive bridge layer on the first dielectric oxide layer; and
110 ) Joining the coated first electrically conductive bridge layer to the first dielectric oxide layer using a soldering process.

After soldering the coated first electrically conductive bridge layer to the first dielectric oxide layer, the following steps are carried out:
112 Forming spaced bridge sectors of the first electrically conductive bridge layer by milling the first electrically conductive bridge layer;
114 ) Arranging a plurality of p-doped and n-doped semiconductors on the spaced bridge sectors of the first electrically conductive bridge layer such that the semiconductors are respectively electrically connected on a first side to the spaced apart bridge sectors of the first bridge layer; and
116 ) Joining the plurality of p-doped and n-doped semiconductors with the spaced bridge sectors of the first electrically conductive bridge layer using a soldering process.

At the same time as the steps 100 to 116 or after performing the steps 100 to 116 The following steps are performed:
118 ) Providing a second support layer formed entirely of aluminum;
120 ) Providing a second dielectric oxide layer on the surface of the second carrier layer.

The provision of the second dielectric oxide layer on the surface of the second carrier layer comprises the following step:
122 ) Anodic oxidation of the surface of the second carrier layer.

After the second dielectric oxide layer has been produced, electrically conductive metal bridges are provided on the second carrier layer and joined with the following steps:
124 ) Plating a second electrically conductive bridge layer to produce a nickel coating;
126 ) Providing the coated second electrically conductive bridge layer on the second dielectric oxide layer; and
128 ) Joining the coated second electrically conductive bridge layer to the second dielectric oxide layer using a soldering process.

After soldering the coated second electrically conductive bridge layer to the second dielectric oxide layer, the following steps are carried out:
130 ) Forming the spaced bridge sectors of the second electrically conductive bridge layer by milling the second electrically conductive bridge layer;
132 ) Arranging the plurality of p-doped and n-doped semiconductors on the spaced apart bridge sectors of the second electrically conductive bridge layer such that the semiconductors are respectively electrically conductively connected on a second side to the spaced bridge sectors of the second bridge layer and all semiconductors are connected through the first Bridge layer and the second bridge layer are electrically conductively connected to each other; and
134 ) Joining the plurality of p-doped and n-doped semiconductors with the spaced bridge sectors of the second electrically conductive bridge layer using a soldering process.

LIST OF REFERENCE NUMBERS

10

thermoelectric device

12

first carrier layer

14

second carrier layer

16

first dielectric oxide layer

18

second dielectric oxide layer

19a, 19b

connections

20a-20g

bridge sectors

22a-22h

bridge sectors

24a-24p

semiconductor

26

vehicle

28

thermoelectric generator

30

Storage

32

consumer

34

temperature-controlled drink holder

36

recording device

38a, 38b

tempering

40a-40f

Peltier elements

42

vehicle seat

44

air conditioning unit

46a, 46b

Peltier elements

100-134

steps

Claims (23)

Manufacturing method for a thermoelectric device ( 10 ), comprising the steps of: - providing a first carrier layer ( 12 ), which is at least partially formed of a metal or a metal alloy; Providing a first dielectric oxide layer ( 16 ) on the surface of the first carrier layer ( 12 ); Providing a first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) on the first dielectric oxide layer ( 16 ); and arranging a plurality of differently doped semiconductors ( 24a - 24p ) on the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) such that the semiconductors ( 24a - 24p ) each on a first side with the first bridge layer ( 19a . 19b . 20a - 20g ) are electrically connected. A manufacturing method according to claim 1, further comprising one, several or all of the following steps: - providing a second carrier layer ( 14 ), which is at least partially formed of a metal or a metal alloy; Providing a second dielectric oxide layer ( 18 ) on the surface of the second carrier layer ( 14 ); Providing a second electrically conductive bridge layer ( 22a - 22h ) on the second dielectric oxide layer ( 18 ); Arranging the plurality of differently doped semiconductors ( 24a - 24p ) on the second electrically conductive bridge layer ( 22a - 22h ) such that the semiconductors ( 24a - 24p ) each on a second side with the second bridge layer ( 22a - 22h ) are electrically conductively connected and all semiconductors ( 24a - 24p ) through the first bridge layer ( 19a . 19b . 20a - 20g ) and the second bridge layer ( 22a - 22h ) are electrically connected to each other. Manufacturing method according to claim 1 or 2, wherein the first carrier layer ( 12 ) is formed at least in sections from aluminum or an aluminum alloy and the provision of the first dielectric oxide layer ( 16 ) on the surface of the first carrier layer ( 12 ) comprises the following step: - anodizing the surface of the first carrier layer ( 12 ); and / or wherein the second carrier layer ( 14 ) is formed at least in sections from aluminum or an aluminum alloy and the provision of the second dielectric oxide layer ( 18 ) on the surface of the second carrier layer ( 14 ) comprises the following step: - anodizing the surface of the second carrier layer ( 14 ). Manufacturing method according to one of the preceding claims, further comprising at least one of the following steps: - joining the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) with the first dielectric oxide layer ( 16 ), preferably using a soldering process; - joining the second electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) with the second dielectric oxide layer ( 18 ), preferably using a soldering process. Manufacturing method according to one of the preceding claims, wherein the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) and / or the second electrically conductive bridge layer ( 22a - 22h ) each a plurality of spaced apart bridge sectors ( 22a - 22h ) and the manufacturing method comprises one, several or all of the following steps: - producing the bridge segments of the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) by machining, preferably by milling, the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ); Producing the spaced-apart bridge sectors of the second electrically conductive bridge layer ( 22a - 22h ) by machining, preferably by milling, the second electrically conductive bridge layer ( 22a - 22h ); Producing the spaced-apart bridge sectors of the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) by etching a corresponding pattern on the first dielectric oxide layer ( 16 ); Producing the spaced-apart bridge sectors of the second electrically conductive bridge layer ( 22a - 22h ) by etching a corresponding pattern on the second dielectric oxide layer ( 18 ); Producing the spaced-apart bridge sectors of the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) by printing a corresponding pattern on the first dielectric oxide layer ( 16 ); Producing the spaced-apart bridge sectors of the second electrically conductive bridge layer ( 22a - 22h ) by printing a corresponding pattern on the second dielectric oxide layer ( 18 ). Manufacturing method according to one of the preceding claims, wherein the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) and / or the second electrically conductive bridge layer ( 22a - 22h ) each have a plurality of spaced-apart bridge sectors ( 22a - 22h ) and the manufacturing method comprises one, several or all of the following steps: - producing the bridge segments of the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) by forming a corresponding pattern on the first dielectric oxide layer ( 16 ) by physical vapor deposition; Producing the spaced-apart bridge sectors of the second electrically conductive bridge layer ( 22a - 22h ) by forming a corresponding pattern on the second dielectric oxide layer ( 18 ) by physical vapor deposition; Producing the spaced-apart bridge sectors of the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) by forming a corresponding pattern on the first dielectric oxide layer ( 16 ) by chemical vapor deposition; Producing the spaced-apart bridge sectors of the second electrically conductive bridge layer ( 22a - 22h ) by forming a corresponding pattern on the second dielectric oxide layer ( 18 ) by chemical vapor deposition. Manufacturing method according to one of the preceding claims, wherein the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) and / or the second electrically conductive bridge layer ( 22a - 22h ) are formed of copper or a copper alloy. Manufacturing method according to one of the preceding claims, further comprising at least one of the following steps: - plating the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ), preferably for producing a nickel coating or a copper coating; Plating the second electrically conductive bridge layer ( 22a - 22h ), preferably for producing a nickel coating or a copper coating. Manufacturing method according to one of the preceding claims, further comprising at least one of the following steps: - joining the plurality of differently doped semiconductors ( 24a - 24p ) with the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ), preferably using a soldering process; Joining the plurality of differently doped semiconductors ( 24a - 24p ) with the second electrically conductive bridge layer ( 22a - 22h ), preferably using a soldering process. Thermoelectric device ( 10 ), with - a first carrier layer ( 12 ), which is at least partially formed of metal or a metal alloy; A first dielectric oxide layer ( 16 ) on the surface of the first carrier layer ( 12 ); A first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) on the first dielectric oxide layer ( 16 ); and - a plurality of differently doped semiconductors ( 24a - 24p ) on the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ), where the semiconductors ( 24a - 24p ) are arranged such that the semiconductors ( 24a - 24p ) each on a first side with the first bridge layer ( 19a . 19b . 20a - 20g ) are electrically connected. Thermoelectric device ( 10 ) according to claim 10, further comprising: - a second carrier layer ( 14 ), which is at least partially formed of metal or a metal alloy; A second dielectric oxide layer ( 18 ) on the surface of the second carrier layer ( 14 ); and - a second electrically conductive bridge layer ( 22a - 22h ) on the second dielectric oxide layer ( 18 ); where the semiconductors ( 24a - 24p ) on the second electrically conductive bridge layer ( 22a - 22h ) are arranged such that the semiconductors ( 24a - 24p ) each on a second side with the second bridge layer ( 22a - 22h ) are electrically conductively connected and all semiconductors ( 24a - 24p ) through the first bridge layer ( 19a . 19b . 20a - 20g ) and the second bridge layer ( 22a - 22h ) are electrically connected to each other. Thermoelectric device ( 10 ) according to claim 10 or 11, wherein the first carrier layer ( 12 ) and / or the second carrier layer ( 14 ) are at least partially formed of aluminum or an aluminum alloy. Thermoelectric device ( 10 ) according to one of claims 10 to 12, wherein the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) with the first dielectric oxide layer ( 16 ) is soldered and / or wherein the second electrically conductive bridge layer ( 22a - 22h ) with the second dielectric oxide layer ( 18 ) is soldered. Thermoelectric device ( 10 ) according to one of claims 10 to 13, wherein the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) and / or the second electrically conductive bridge layer ( 22a - 22h ) each have a plurality of spaced-apart bridge sectors ( 19a . 19b . 20a - 20g ; 22a - 22h ) exhibit. Thermoelectric device ( 10 ) according to one of claims 10 to 14, wherein the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) and / or the second electrically conductive bridge layer ( 22a - 22h ) is formed of copper or a copper alloy. Thermoelectric device ( 10 ) according to one of claims 10 to 15, wherein the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) and / or the second electrically conductive bridge layer ( 22a - 22h ) have a nickel coating or a copper coating. Thermoelectric device ( 10 ) according to one of claims 10 to 16, wherein the plurality of differently doped semiconductors ( 24a - 24p ) with the first electrically conductive bridge layer ( 19a . 19b . 20a - 20g ) and / or with the second electrically conductive bridge layer ( 22a - 22h ) is soldered. Thermoelectric device ( 10 ) according to one of claims 10 to 17, wherein the thermoelectric device ( 10 ) is non-destructively deformable, in particular bendable, is formed. Thermoelectric device ( 10 ) according to one of claims 10 to 18, wherein the thermoelectric device ( 10 ) by means of a manufacturing method for a thermoelectric device ( 10 ) has been prepared according to one of claims 1 to 9. Thermoelectric generator ( 28 ), with - one or more thermoelectric devices ( 10 ) according to any one of claims 10 to 19. Temperature-controlled drink holder ( 34 ), with - a receiving device ( 36 ), which is set up for receiving a drinking vessel and a temperature control room ( 38a . 38b ) for the drinking vessel provides; and - one or more thermoelectric devices formed as Peltier elements ( 40a - 40f ), wherein the one or more thermoelectric devices ( 40a - 40f ) heat-transmitting with the temperature control room ( 38a . 38b ) are coupled and formed according to one of claims 10 to 19. Battery tempering, with - One or more thermoelectric devices formed as Peltier elements, wherein the one or more thermoelectric devices are formed according to one of claims 10 to 19. Air conditioning device ( 44 ) for a vehicle seat ( 42 ), comprising - one or more thermoelectric devices formed as Peltier elements ( 46a . 46b ), wherein the one or more thermoelectric devices ( 46a . 46b ) are formed according to one of claims 10 to 19.

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