DE102014107661A8 - Kontinuierliches Einstellen einer Präambel-Freigabe-Zeitsteuerung in einer Schnittstelle einer Speichereinrichtung mit doppelter Datenrate - Google Patents
Kontinuierliches Einstellen einer Präambel-Freigabe-Zeitsteuerung in einer Schnittstelle einer Speichereinrichtung mit doppelter Datenrate Download PDFInfo
- Publication number
- DE102014107661A8 DE102014107661A8 DE102014107661.3A DE102014107661A DE102014107661A8 DE 102014107661 A8 DE102014107661 A8 DE 102014107661A8 DE 102014107661 A DE102014107661 A DE 102014107661A DE 102014107661 A8 DE102014107661 A8 DE 102014107661A8
- Authority
- DE
- Germany
- Prior art keywords
- interface
- memory device
- data rate
- double data
- rate memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1668—Details of memory controller
- G06F13/1689—Synchronisation and timing concerns
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L7/00—Arrangements for synchronising receiver with transmitter
- H04L7/0016—Arrangements for synchronising receiver with transmitter correction of synchronization errors
- H04L7/0033—Correction by delay
- H04L7/0037—Delay of clock signal
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L7/00—Arrangements for synchronising receiver with transmitter
- H04L7/0016—Arrangements for synchronising receiver with transmitter correction of synchronization errors
- H04L7/0033—Correction by delay
- H04L7/0041—Delay of data signal
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/906,610 US9190129B2 (en) | 2013-05-31 | 2013-05-31 | Continuous tuning of preamble release timing in a double data-rate memory device interface |
US13/906,610 | 2013-05-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102014107661A1 DE102014107661A1 (de) | 2014-12-04 |
DE102014107661A8 true DE102014107661A8 (de) | 2014-12-11 |
Family
ID=51899594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102014107661.3A Ceased DE102014107661A1 (de) | 2013-05-31 | 2014-05-30 | Kontinuierliches Einstellen einer Präambel-Freigabe-Zeitsteuerung in einer Schnittstelle einer Speichereinrichtung mit doppelter Datenrate |
Country Status (2)
Country | Link |
---|---|
US (1) | US9190129B2 (de) |
DE (1) | DE102014107661A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9836221B1 (en) * | 2014-11-10 | 2017-12-05 | Ball Aerospace & Technologies Corp. | Configurable high speed FPGA scan mechanism controller |
US10074417B2 (en) * | 2014-11-20 | 2018-09-11 | Rambus Inc. | Memory systems and methods for improved power management |
CN106096702B (zh) * | 2016-05-18 | 2019-03-01 | 合肥杰发科技有限公司 | 补偿安全数码卡的延长线引起的延迟的方法及装置 |
US10503435B2 (en) * | 2016-12-01 | 2019-12-10 | Qualcomm Incorporated | Providing extended dynamic random access memory (DRAM) burst lengths in processor-based systems |
KR20180075083A (ko) * | 2016-12-26 | 2018-07-04 | 에스케이하이닉스 주식회사 | 동적 터미네이션 회로, 이를 포함하는 반도체 장치 및 시스템 |
KR102392055B1 (ko) * | 2017-08-09 | 2022-04-28 | 삼성전자주식회사 | 리트레이닝 동작의 수행 여부를 효율적으로 결정하기 위한 메모리 장치 및 이를 포함하는 메모리 시스템 |
KR102447499B1 (ko) * | 2017-10-19 | 2022-09-26 | 삼성전자주식회사 | 스토리지 장치 및 스토리지 장치의 동작 방법 |
US10418090B1 (en) * | 2018-06-21 | 2019-09-17 | Micron Technology, Inc. | Write signal launch circuitry for memory drive |
KR102488584B1 (ko) | 2018-07-13 | 2023-01-17 | 에스케이하이닉스 주식회사 | 다양한 주파수의 클럭 신호들을 수신하는 반도체 장치 및 이를 포함하는 시스템 |
KR20200008842A (ko) * | 2018-07-17 | 2020-01-29 | 삼성전자주식회사 | 반도체 메모리 장치 및 반도체 메모리 장치의 동작 방법 |
US10643685B1 (en) * | 2018-11-01 | 2020-05-05 | Realtek Semiconductor Corporation | Control circuit, sampling circuit for synchronous dynamic random-access memory, method of reading procedure and calibration thereof |
US10803914B1 (en) * | 2019-08-27 | 2020-10-13 | Micron Technology, Inc. | Selectively squelching differential strobe input signal in memory-device testing system |
KR20220165482A (ko) * | 2021-06-08 | 2022-12-15 | 삼성전자주식회사 | 메모리 장치, 그것을 포함하는 메모리 시스템 및 그것의 동작 방법 |
US11657846B1 (en) * | 2022-03-31 | 2023-05-23 | Stmicroelectronics S.R.L. | Automatic skew calibration circuit for pattern-dependent dynamic wave shaping for HDD preamplifier write |
Family Cites Families (25)
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US5692165A (en) * | 1995-09-12 | 1997-11-25 | Micron Electronics Inc. | Memory controller with low skew control signal |
US6442644B1 (en) * | 1997-08-11 | 2002-08-27 | Advanced Memory International, Inc. | Memory system having synchronous-link DRAM (SLDRAM) devices and controller |
JP3416083B2 (ja) * | 1999-08-31 | 2003-06-16 | 株式会社日立製作所 | 半導体装置 |
KR100527397B1 (ko) * | 2000-06-30 | 2005-11-15 | 주식회사 하이닉스반도체 | 반도체메모리 장치에서 작은 지터를 갖는 지연고정루프 |
US7002378B2 (en) * | 2000-12-29 | 2006-02-21 | Intel Corporation | Valid data strobe detection technique |
JP2002366428A (ja) * | 2001-06-06 | 2002-12-20 | Mitsubishi Electric Corp | メモリコントローラ |
US7126399B1 (en) * | 2004-05-27 | 2006-10-24 | Altera Corporation | Memory interface phase-shift circuitry to support multiple frequency ranges |
US7218158B2 (en) | 2004-08-27 | 2007-05-15 | Micron Technology, Inc. | Self-timed fine tuning control |
US7366862B2 (en) * | 2004-11-12 | 2008-04-29 | Lsi Logic Corporation | Method and apparatus for self-adjusting input delay in DDR-based memory systems |
US7292500B2 (en) * | 2005-07-29 | 2007-11-06 | Agere Systems Inc. | Reducing read data strobe latency in a memory system |
US8121237B2 (en) * | 2006-03-16 | 2012-02-21 | Rambus Inc. | Signaling system with adaptive timing calibration |
US7433262B2 (en) | 2006-08-22 | 2008-10-07 | Atmel Corporation | Circuits to delay a signal from DDR-SDRAM memory device including an automatic phase error correction |
US7405984B2 (en) * | 2006-09-19 | 2008-07-29 | Lsi Corporation | System and method for providing programmable delay read data strobe gating with voltage and temperature compensation |
JP2008103013A (ja) * | 2006-10-18 | 2008-05-01 | Nec Electronics Corp | メモリリード制御回路およびその制御方法 |
US7671648B2 (en) * | 2006-10-27 | 2010-03-02 | Micron Technology, Inc. | System and method for an accuracy-enhanced DLL during a measure initialization mode |
US7802153B1 (en) * | 2006-12-07 | 2010-09-21 | 3Par, Inc. | Trainable link |
US8504788B2 (en) * | 2006-12-20 | 2013-08-06 | Rambus Inc. | Memory controller, system and method for read signal timing calibration |
US7911857B1 (en) * | 2009-06-10 | 2011-03-22 | Juniper Networks, Inc. | Preamble detection and postamble closure for a memory interface controller |
US8279697B2 (en) * | 2009-09-11 | 2012-10-02 | Avago Technologies Enterprise IP (Singapore) Pte. Ltd. | Circuits and methods for reducing noise in the power supply of circuits coupled to a bidirectional bus |
US8234422B2 (en) | 2009-09-11 | 2012-07-31 | Avago Technologies Enterprise IP (Singapore) Pte. Ltd | Interfaces, circuits, and methods for communicating with a double data rate memory device |
WO2012102770A1 (en) * | 2011-01-28 | 2012-08-02 | Raytheon Company | Psuedo synchronous serial interface synchronization method |
US8422319B2 (en) * | 2011-05-30 | 2013-04-16 | Lsi Corporation | System and method for gate training in a memory system |
US8638622B2 (en) | 2011-07-06 | 2014-01-28 | Arm Limited | Apparatus and method for receiving a differential data strobe signal |
US8773926B2 (en) * | 2012-02-10 | 2014-07-08 | Lsi Corporation | Method for robust preamble location in a DQS signal |
US8760946B2 (en) * | 2012-05-22 | 2014-06-24 | Advanced Micro Devices | Method and apparatus for memory access delay training |
-
2013
- 2013-05-31 US US13/906,610 patent/US9190129B2/en not_active Expired - Fee Related
-
2014
- 2014-05-30 DE DE102014107661.3A patent/DE102014107661A1/de not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
US9190129B2 (en) | 2015-11-17 |
US20140355359A1 (en) | 2014-12-04 |
DE102014107661A1 (de) | 2014-12-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R012 | Request for examination validly filed | ||
R002 | Refusal decision in examination/registration proceedings | ||
R003 | Refusal decision now final |