DE102014100747A1 - Optoelectronic components and methods for producing optoelectronic components - Google Patents

Abstract

In various exemplary embodiments, an optoelectronic component (100) is provided having the optoelectronic component (100): a first electrode (110), a second electrode (114), and an organic functional layer structure (112), the organic functional layer structure (112 ) is formed between the first electrode (110) and the second electrode (114), and wherein the organic functional layer structure (112) is for converting an electric current into an electromagnetic radiation and / or for converting an electromagnetic radiation into an electric current is trained; wherein the first electrode (110), the second electrode (114) and / or the organic functional layer structure (112) comprise an electrically conductive layer, the electrically conductive layer having a first region having a first electrical conductivity; and a second region (120) having a second electrical conductivity different from the first electrical conductivity; wherein the second region (120) is formed in the first region and due to its second electrical conductivity causes a defined current distribution in the electrically conductive layer and thereby influences the current flow in the first region.

Description

In various embodiments, optoelectronic components and methods for producing optoelectronic components are provided.

Organic-based optoelectronic components, for example organic light-emitting diodes (OLEDs), are finding widespread application in general lighting, for example as a surface light source. An organic optoelectronic component, for example an OLED, may be an anode 602 and a cathode 604 having an organic functional layer system therebetween, on a substrate (illustrated for a square OLED in FIG 6A and a rectangular OLED in 6B ). The organic functional layer system may include one or more emitter layers in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structures each consisting of two or more charge generating layers, CGL ) for charge carrier pair generation, as well as one or more electron block layer (s), also referred to as hole transport layer (HTL), and one or more hole block layer (s), also referred to as electron transport layer (s) (ETL) ) to direct the current flow. The OLED as a surface light source is provided with a planar optically active region 606 formed, the light emitted - also referred to as light area 606 ,

The anode 602 and / or the cathode 604 can be formed transparent, usually from a transparent conductive oxide (TCO). A transparent conductive oxide has an electrical cross-conductivity which is much lower than the electrical cross-conductivity of a metal. In the case of planar optoelectronic components, this can lead to an inhomogeneous emission of light, in particular when the OLED is scaled to large areas (illustrated in an intensity diagram of a surface light source in FIG 6A , B). For example, the anode 602 and the cathode 604 may be formed of MgAg or Ag with a sheet resistance of 5 Ω / □. The illuminated area 606 For example, it may have an area of 20 × 20 cm ² (illustrated in FIG 6A ) with a luminance uniformity of 28.6% at 1000 nits, the luminance being from the edge to the center of the luminous area 606 decreases. The illuminated area 606 For example, in the case of two-sided contacts, it may have an area of 12 × 20 cm ² (illustrated in FIG 6B ) with a luminance uniformity on the luminous area of 50% at 1000 nits, the luminance being from the edge to the center of the luminous area 606 decreases.

Typically, to reduce inhomogeneity, the geometry of the electrodes 602 . 604 optimized, but this is only possible to a limited extent.

Furthermore, in the case of an optoelectronic component with different emitter layers stacked one on top of the other, free-standing luminous patterns in the emitter layers can not or only with difficulty be produced by conventional masking methods with masking of the regions to be structured by means of a shadow mask during vapor deposition. In a conventional method, the areas of the organic functional layer structure that are not supposed to glow in the application are "deactivated" by a laser process. In the process, organic functional layer structure is subsequently formed locally in a high-resistance manner by means of a laser bombardment. As a result, the bombarded area of the illuminated area of the OLED is deactivated. In another conventional method, similarly to a shadow mask, a patterned opaque layer is formed to filter the generated light according to the pattern and thereby image the pattern.

In various embodiments, optoelectronic components and methods for producing optoelectronic components are provided, with which it is possible to adjust the optical activity of the optically active region, for example to reduce the inhomogeneity of the optically active surface of the optoelectronic component and / or to present predetermined information. For example, in an optoelectronic component with stacked, different emitter and / or absorber layers, the emitter and / or absorber layers can be operated independently of each other laterally structured.

In various embodiments, an optoelectronic device is provided having an optically active region, the optically active region comprising: a first electrode, a second electrode, and an organic functional layer structure, wherein the organic functional layer structure is formed between the first electrode and the second electrode, and wherein the organic functional layer structure is configured to convert an electric current into an electromagnetic radiation and / or to convert an electromagnetic radiation into an electric current; wherein the first electrode, the second electrode and / or the organic functional layer structure have an electrically conductive layer, wherein the electrically conductive layer has a first region, the has a first electrical conductivity; and a second region having a second electrical conductivity, wherein the second region is formed in the first region and due to its second electrical conductivity causes a defined current distribution in the electrically conductive layer.

In various embodiments, the second electrical conductivity may be less than the first electrical conductivity and thereby the defined current distribution may have a current flow in the first region, so that a more homogeneous current distribution is formed in the first region relative to an electrically conductive layer without a second region.

For example, the first region may be shaped and / or arranged such that the optically active region has a higher homogeneity with regard to luminance grading and / or chromaticity in the optically active region with respect to an optically active region without second electrically conductive region (s) For example, in a range of about 5 to about 100%. The defined current distribution in the planar electrically conductive layer can, for example, form the higher homogeneity.

In one embodiment, the second region may be formed in the first region such that a predetermined information can be displayed in the optically active region. The higher homogeneity in this embodiment can be realized in the region without representable information in the optically active region.

In various embodiments, the second electrical conductivity may be different from the first electrical conductivity and thus the defined current distribution may have a current flow in the first region, so that a predetermined information can be displayed in the optically active region.

In one embodiment, the electrical conductivity of the electrically conductive second region may be higher than the electrical conductivity of the first region. For example, the electrical conductivity of the second region may be higher in a range of about 5% to about 1000% than in the first region. For example, a metallic second region can be formed in a transparent first electrically conductive layer, for example in the form of thin, linear structures with a metal, graphene and / or carbon nanotubes, for example in the form of the predetermined representable information. In another example, the material of the electrically conductive layer may be doped in the region of the second region, so that the electrical conductivity is increased. In other words, the second region may have a low sheet electrical resistance than the first region. For example, a second region with higher electrical conductivity than the first region can be made more inhomogeneous with the current distribution in the electrically conductive layer. As a result, for example, areas emitting intense electromagnetic radiation can be formed in the optically active area. Thus, a second region of higher electrical conductivity than the first region may be used to realize a more inhomogeneous luminous area.

In various embodiments, an electrically conductive layer or structure, a layer or structure which is formed such that it passes during operation of the optoelectronic component at least a portion of the electrical operating current of the optoelectronic component. In other words, a layer or structure of an optoelectronic component is electrically conductive in various embodiments if it can conduct an electrical current during operation of the optoelectronic component or under operating conditions, i. H. is electrically conductive or is formed.

The electrically conductive layer or structure may for example comprise or be formed from an electrically conductive substance, for example a metal or a metal alloy, for example Al, Cu, MgAg, or one of the further examples described below. Alternatively or additionally, the electrically conductive layer or structure may comprise or be formed from a dielectric substance and / or a semiconducting substance.

In an electrically conductive layer or structure made of a dielectric substance or mixture of substances, the electrically conductive layer or structure can be formed, for example, with a thickness in the direction of current and / or a dielectric length of the current path that transports an electric current through or over the dielectric layer or structure can be, for example by means of a tunnel current and / or electrically conductive channels in the dielectric layer or structure.

In the case of an electrically conductive layer or structure composed of a semiconductive substance or substance mixture, the electrically conductive layer or structure may be adapted with respect to the layer (s) or structure (s) directly electrically connected to the electrically conductive layer or structure, for example with regard to the band structure and / or crystal direction in FIG Be designed adapted current direction.

For example, with respect to the band structure and / or crystal direction in the current direction of the semiconductive electroconductive layer or structure, the energy level of the conduction band, the valence band, the Fermi level, the Fermi level, the chemical potential, the lowest unoccupied molecular orbital (lowest unoccupied molecule orbital - LUMO), highest occupied molecule orbital (HOMO), ionization energy and / or electron affinity in forming the semiconductive electrically conductive layer or structure are taken into account with respect to the directly electrically connected to the electrically conductive layer or structure Layer / s or structure / s, so that a current flow during operation of the optoelectronic component can be carried out by the semiconducting electrically conductive layer or structure in operation.

Analogously, an electrically nonconductive layer or structure is a layer or structure which is designed in such a way that it does not transport or pass through an electrical current during operation of the optoelectronic component.

In various embodiments, the second region is formed in the electrically conductive layer, i. H. within the electrically conductive layer. In various embodiments, the second region can penetrate the electrically conductive layer, for example forming two or more different boundary surfaces of the electrically conductive layer with further layers. Alternatively, the second area may be partially or completely surrounded by the first area.

The current flow takes place in various embodiments along a current path or a plurality of current paths or can be referred to as a family of current paths. The planar first region can be set up to form a planar optically active region of the optoelectronic component. The optically active region can be, for example, a luminous surface, detector surface and / or active solar surface. The areal optically active area can be, for example, a square area with an edge length of more than 10 cm or more than 20 cm or more than 25 cm or more than 50 cm. Furthermore, the planar optically active region can also have a different shape, for example a rectangular or round shape, with a corresponding surface area. The planar electrically conductive layer or the first region can essentially have the areal dimension and shape of the optically active region.

The first electrode, the organic functional layer structure and the second electrode may form an electrically active region. The optically active region of the optoelectronic component can be formed by means of the planar region of the organic functional layer structure.

In the embodiments, the optoelectronic components may each further comprise subsequent embodiments, as far as they are useful.

The first region may be formed as a planar first region.

In one embodiment, the electrically conductive layer may comprise two or more electrically conductive layers. The two or more electrically conductive layers may be electrically connected to each other or electrically isolated from each other. The two or more electrically conductive layers may have a common physical contact or be spatially isolated from each other. The two or more electrically conductive layers may be formed adjacent to one another, one above the other and / or offset from each other. The two or more electrically conductive layers may each have a second region having the same electrical properties; or electrically different second regions. The two or more electrically conductive layers may also have a common second region, for example by the common second region penetrating the two or more electrically conductive layers, for example by the second region being electrically non-conductive. The two or more electrically conductive layers may have second regions which are formed in different regions of the optically active region, for example with respect to each other one above the other and laterally offset.

In one embodiment, the electrically conductive layer may comprise a first electrically conductive layer and a second electrically conductive layer, wherein the first electrically conductive layer has a first first region and a first second region, and wherein the second electrically conductive layer has a second first region and has a second second area.

In one embodiment, the first first region and the second first region may comprise at least partially parallel and / or congruent parts. The parallel and / or congruent parts may be, for example, partially geometrically covering second regions.

In one embodiment, the first second region and the second second region may be formed with respect to each other such that the Current flow in the first first area is influenced differently than in the second first area. By way of example, the first second region and the second second region may have a different shape, a different area fraction on the respective electrically conductive layer and / or be arranged differently with respect to one another, for example, not congruent, geometrically opaque.

In one embodiment, the second region may have a surface portion of the electrically conductive layer, which depends, for example, on the given information to be displayed.

The shape, the proportion and / or the arrangement of the second region in an electrically conductive layer can / can be dependent on the application-specific configuration of the optically active region and determined for example by means of optical simulations, for example by means of the software "COMSOL". In a two- or multi-layered structure, or in two or more electrically conductive layers, each with second regions, for example, topographically pointed structures and / or very rough surfaces as second regions may cause field elevations to occur at an electrode located above the second region / or defects can be caused.

In one embodiment, the first second region and the second second region may be formed with respect to one another such that the current flow in the at least partially parallel and / or congruent parts in the first first region is influenced differently than in the second first region. For example, the first second region may lead to a greater homogenization of the current distribution in the first electrically conductive layer than the second second region in the second electrically conductive layer.

In one embodiment, the first region can comprise or be formed from a transparent or translucent electrically conductive material.

In one embodiment, the transparent or translucent electrically conductive material may be an organic substance or an organic substance mixture.

In one embodiment, the transparent or translucent electrically conductive material may be or comprise a metal oxide.

In one embodiment, the transparent or translucent electrically conductive material may be or comprise a metal. For example, the electrically conductive layer and / or the first region may be formed so thin with a metal that it is optically transparent or translucent, for example a silver layer having a thickness of less than 50 nm.

In one embodiment, the second region may have one or more second regions. Two or more second regions may be spatially and / or electrically isolated from each other.

In one embodiment, the second region may be formed electrically non-conductive.

In one embodiment, the electrically non-conductive second region can comprise or be formed from a dielectric substance. In other words, a second region may be formed of a dielectric material or an electrically insulating material.

In one embodiment, the electrically nonconductive second region may comprise or be formed from an electrically conductive substance. In other words, the second region can also be formed from an electrically conductive material, for example a semiconductive material. However, the electronic band structure and / or the operating parameters of the second region and their electrically adjacent region may be such that the band structure of the electrically conductive material has no, few or localized electronic states in the second region, which conducts an electric current through the or in the second area.

In one embodiment, the second region may be formed as an opened region of the electrically conductive layer or may be formed by opening a portion of the electrically conductive layer. An opened area may be formed by removing a part of the electrically conductive layer. The opening in the first electrically conductive layer may form the second region in the form of an air-filled cavity, or may be formed with an electrically nonconductive or otherwise conductive material, i. H. a material having a different electrical conductivity than the conductivity of the material of the electrically conductive layer to be filled.

In one embodiment, the second region can be designed to be electrically conductive, for example, of the substance or mixture of substances of the electrically conductive layer.

In one embodiment, the second region can be formed by the substance or mixture of the electrically conductive layer is converted, for example, doped, removed, degraded, reacted and / or in a chemically different substance or a chemically different mixture of substances has been converted.

In one embodiment, the electrical conductivity of the electrically conductive second region may be lower than the electrical conductivity of the first region. The electrical conductivity of the second region may be, for example, in a range of about 5% to about 10000% - or dielectrically / impactively conductive - lower than in the first region. For example, the material of an electrically conductive layer in the region of the second region may be partially converted into an electrically non-conductive material, for example by means of an oxidation of a metal or degradation of an organic conductive material. In another embodiment, the second region may have a different porosity, crystallinity, and / or crystal orientation than the first region. In other words, the second region may have a higher electrical sheet resistance than the first region.

In one embodiment, the second region may be formed from the first region, for example, in which the material of the electrically conductive layer, i. H. of which the material of the first region is electrically converted or removed.

In one embodiment, the optoelectronic component may have one or more electrical layer (s) each having one or more second regions. The plurality of second region may be the same or different, for example, electrically non-conductive, electrically conductive with higher conductivity and / or electrically conductive with low conductivity.

In one embodiment, the first region may surround the second region. In other words, the second region is formed at least partially removed from the edge of the electrically conductive layer in the first region.

In one embodiment, the first region may laterally surround the second region.

In one embodiment, the displayable information predetermined in the optically active region can be, for example, a lettering, an ideogram, a symbol and / or a pictogram. For example, the second area may be in the form of a lettering, so that the lettering in the optically active area can be perceived as a color and / or luminance contrast. The defined current distribution in the planar electrically conductive layer can for example form or generate the predetermined information to be displayed. The representable predetermined information can be visible or perceptible, for example during operation of the optoelectronic component, and not be visible or perceptible in non-operation.

In one embodiment, the second region may be formed such that a planar current path of a current in the planar first region is influenced in a linear current path of the current. In other words, the second region may be formed such that an electric current is deflected from a flat current path into a linear current path. As a result, the series resistance of the deflected current path can be increased with respect to the sheet resistance of the planar current path. As a result, the electrical voltage and / or the electric current intensity in the first region in the vicinity of second regions can deviate from the values in the first region more distant from the second regions. As a result, the color gradient and / or the luminance gradient in the optically active region can / can be influenced, for example adjustable.

In one embodiment, the second region may be formed such that the linear current path has one of the following geometric shapes: a meander, a spiral, a hyperbola.

In one embodiment, the optoelectronic component can be designed as a photodetector, a solar cell and / or a light-emitting diode, for example as an organic light-emitting diode.

In one embodiment, the optoelectronic component can be formed flat, for example as a surface light source.

In various embodiments, there is provided a method of fabricating an optoelectronic device, the method comprising: forming a first electrode, forming an organic functional layer structure on or over the first electrode, the organic functional layer structure converting electrical current into electromagnetic radiation; or is formed to convert an electromagnetic radiation into an electric current; Forming a second electrode on or over the organic functional layer structure, and wherein forming the first electrode, forming the second electrode and / or forming the organic functional layer structure comprise forming an electrically conductive layer, the electrically conductive layer having a first region having a first electrical conductivity is formed; and a second region having a second electrical conductivity, wherein the second region is formed in the first region and causes a defined current distribution in the electrically conductive layer due to its second electrical conductivity.

In various embodiments, the second electrical conductivity may be less than the first electrical conductivity, and thereby the defined current distribution may have a current flow in the first region, so that a more homogeneous current distribution is formed in the first region relative to an electrically conductive layer without a second region.

In various embodiments, the second electrical conductivity may be different from the first electrical conductivity, for example higher or lower, and thereby the defined current distribution may have a current flow in the first region, so that a predetermined information in the optically active region can be represented.

In the embodiments, the methods may each further comprise subsequent embodiments, as far as they are meaningful. The described features of the embodiments of the optoelectronic component apply analogously to the method for producing the optoelectronic component; and the features of the method for producing the optoelectronic component analogous to the optoelectronic component - where appropriate.

In one embodiment of the method, the electrically conductive layer may be formed with two or more electrically conductive layers, wherein when a second region is formed in one of the two or more electrically conductive layers, a second region is formed in the other or further electrically conductive layers.

In one embodiment of the method, the electrically conductive layer can be structured such that the second region is formed with the first region.

In one embodiment of the method, the second region may be formed after the formation of the first region in the first region. For example, the electrically conductive layer may be patterned after forming, for example, depositing, the material of the electrically conductive layer on a substrate.

In one embodiment of the method, the second region can be formed from the first region. For example, the material of the first region can be converted into the material of the second region. For example, a region may be removed from the electrically conductive layer having an electrically conductive region, thereby forming the second region.

In one embodiment of the method, the second region can be formed by opening a region of the electrically conductive layer.

In one embodiment of the method, the second region can be formed by means of a laser ablation and / or UV irradiation of the first region.

In one embodiment of the method, the second region may be formed by chemically transforming a portion of the electrically conductive layer.

In one embodiment of the method, the second region can be formed by means of doping a region of the electrically conductive layer.

In one embodiment of the method, the method may further comprise forming an encapsulation structure such that the optoelectronic component is hermetically sealed with respect to at least one harmful substance, for example water and / or oxygen.

In one configuration of the method, the second region can be formed in the electrically conductive layer after the formation of the encapsulation structure.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1 a schematic representation of an optoelectronic component according to various embodiments;

2 a diagram for producing an optoelectronic component according to various embodiments;

3 a schematic representation of an optoelectronic component according to various embodiments;

4A B shows schematic representations of an exemplary embodiment of an optoelectronic component;

3 a schematic representation of an embodiment of an optoelectronic component;

6A B shows schematic representations of conventional optoelectronic components; and

7A -C schematic representations of embodiments of an optoelectronic component.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

In various embodiments, optoelectronic components are described, wherein an optoelectronic component has an optically active region. The optically active region of an optoelectronic component can absorb electromagnetic radiation and form a photocurrent therefrom, i. H. convert; or emit electromagnetic radiation by means of an applied voltage to the optically active region. In various embodiments, the electromagnetic radiation may have a wavelength range comprising X-radiation, UV radiation (A-C), visible light and / or infrared radiation (A-C).

An electromagnetic radiation emitting structure may be in various. Embodiments be a semiconductor device emitting electromagnetic radiation and / or be formed as a diode emitting electromagnetic radiation, as a diode emitting organic electromagnetic radiation, as a transistor emitting electromagnetic radiation or as a transistor emitting organic electromagnetic radiation. The radiation may, for example, be light (in the visible range), UV radiation and / or infrared radiation. In this context, the electromagnetic radiation emitting device may be formed, for example, as a light emitting diode (LED) as an organic light emitting diode (OLED), as a light emitting transistor or as an organic light emitting transistor. The electromagnetic radiation emitting device may be part of an integrated circuit in various embodiments. Furthermore, a plurality of electromagnetic radiation emitting components may be provided, for example housed in a common housing.

In various embodiments, an optoelectronic component may be formed as an organic light emitting diode (OLED), an organic field effect transistor (OFET) and / or organic electronics. The organic field effect transistor may be a so-called "all-OFET" in which all layers are organic. An optoelectronic structure may comprise an organic functional layer system, which is synonymously also referred to as an organic functional layer structure. The organic functional layer structure may include or be formed from an organic substance or an organic substance mixture, which is formed, for example, for providing an electromagnetic radiation from a provided electric current.

An optoelectronic component having an optically active region may have one or more optically active sides. A planar component, which has two flat, optically active sides, can be transparent or translucent, for example, in the connecting direction of the optically active sides. A planar component may also be referred to as a planar component. However, the optically active region can also have a planar, optically active side and a flat, optically inactive side, for example an organic light-emitting diode which is designed as a top emitter or bottom emitter. The optically inactive side may, for example, be provided with a mirror structure, for example a mirror structure with an electrically switchable reflectivity and / or an opaque substance or substance mixture, for example, for heat distribution; whereby the beam path of the device can be directed.

An organic light emitting diode may be formed as a top emitter or a bottom emitter. In a bottom emitter, light is emitted from the electrically active region through the carrier. In a top emitter, light is emitted from the top of the electrically active region and not by the carrier.

A top emitter and / or bottom emitter can also be optically transparent or optically translucent, for example, each of the layers or structures described below can be made transparent or translucent.

The term "translucent" or "translucent layer" can be understood in various embodiments that a layer is permeable to light, for example for the light generated by the light emitting device, for example, one or more wavelength ranges, for example, for light in a wavelength range of visible light (for example, at least in a partial region of the wavelength range of 380 nm to 780 nm). By way of example, the term "translucent layer" in various exemplary embodiments is to be understood as meaning that essentially the entire amount of light coupled into a structure (for example a layer) is also coupled out of the structure (for example layer), in which case a portion of the light can be scattered ,

In various embodiments, the term "transparent" or "transparent layer" can be understood as meaning that a layer is permeable to light (for example at least in a subregion of the wavelength range from 380 nm to 780 nm), wherein a structure (for example a layer) coupled-in light without scattering or light conversion is also coupled out of the structure (for example, layer).

In various embodiments, an opto-electronic device 100 provided - illustrated in 1 , The optoelectronic component 100 For example, it can be designed as a photodetector, a solar cell and / or a light-emitting diode, for example as an organic light-emitting diode. Furthermore, the optoelectronic component 100 be formed flat, for example as a surface light source.

The optoelectronic component 100 can be a hermetically sealed substrate 102 , an active area 106 and an encapsulation structure 326 (see also description below in supplement, for example 3 ).

The active area 106 is an electrically active area 106 and / or an optically active region 106 , The active area 106 is, for example, the range of the optoelectronic component 100 in which electrical current for operation of the optoelectronic component 100 flows and / or generated and / or absorbed in the electromagnetic radiation.

The electrically active area 106 can be a first electrode 110 , an organic functional layer structure 112 and a second electrode 114 exhibit. The organic functional layer structure 112 is electrically between the first electrode 110 and the second electrode 114 educated. The organic functional layer structure 112 is designed to convert an electric current into an electromagnetic radiation and / or to convert an electromagnetic radiation into an electric current.

The first electrode 110 may be formed as an anode or as a cathode.

The first electrode 110 may comprise or be formed from one of the following electrically conductive material: a metal; a conductive conductive oxide (TCO); a network of metallic nanowires and particles, such as Ag, combined, for example, with conductive polymers; a network of carbon nanotubes combined, for example, with conductive polymers; Graphene particles and layers; a network of semiconducting nanowires; an electrically conductive polymer; a transition metal oxide; and / or their composites. The first electrode 110 of metal or metal may include or be formed from one of the following materials: Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these materials. The first electrode 110 For example, as the transparent conductive oxide, it may have any of the following materials: for example, metal oxides: for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds, such as ZnO, SnO ₂ , or In ₂ O _{3 also} include ternary metal oxygen compounds, such as AlZnO, Zn ₂ SnO ₄ , CdSnO ₃ , ZnSnO ₃ , MgIn ₂ O ₄ , GaInO ₃ , Zn ₂ In ₂ O ₅ or In ₄ Sn ₃ O ₁₂ or mixtures of different transparent conductive oxides to the group of TCOs and can be used in various embodiments. Furthermore, the TCOs do not necessarily correspond to a stoichiometric composition and may furthermore be p-doped or n-doped, or hole-conducting (p-TCO) or electron-conducting (n-TCO).

The first electrode 110 may comprise a layer or a layer stack of multiple layers of the same material or different materials. The first electrode 110 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

The first electrode 110 For example, it may have a layer thickness in a range from 10 nm to 500 nm, for example from less than 25 nm to 250 nm, for example from 50 nm to 100 nm.

The first electrode 110 may have a first electrical connection to which a first electrical potential can be applied. The first electrical potential may be provided by a power source, such as a power source or a voltage source. Alternatively, the first electrical potential to an electrically conductive carrier 302 be created and the first electrode 110 through the carrier 302 be fed indirectly electrically. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

In various embodiments, the organic functional layer structure 112 have one, two or more functional layered structure units and one, two or more interlayer structures between the layered structure units (illustrated in FIG 3 ).

On or above the organic functional layer structure 112 or optionally on or over the one or more further of the organic functional layer structure and / or organic functional layers, the second electrode 114 be educated.

The second electrode 114 may according to one of the embodiments of the first electrode 110 be formed, wherein the first electrode 110 and the second electrode 114 may be the same or different. The second electrode 114 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.

The second electrode 114 may have a second electrical connection to which a second electrical potential can be applied. The second electrical potential may be provided by the same or a different energy source as the first electrical potential and / or the optional third electrical potential. The second electrical potential may be different from the first electrical potential and / or the optionally third electrical potential. For example, the second electrical potential may have a value such that the difference from the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V.

The first electrode 110 , the second electrode 114 and the organic functional layer structure 112 can be electrically conductive, for example electrically conductive under operating conditions.

The optoelectronic component 100 may be at least one planar electrically conductive layer having a flat first area and a second area 120 exhibit. The first region has a first electrical conductivity; and the second region has a second electrical conductivity. The second region may be formed in the first region and cause a defined current distribution in the electrically conductive layer due to its second electrical conductivity. In various embodiments, the second electrical conductivity may be less than the first electrical conductivity and thereby the defined current distribution have a current flow in the first region, so that a more homogeneous current distribution is formed in the first region relative to an electrically conductive layer without a second region. In various exemplary embodiments, the second electrical conductivity may be different from the first electrical time capability and, as a result, the defined current distribution may have a current flow in the first region, so that a predetermined information can be displayed in the optically active region. In various embodiments, the first electrode may / may 110 , the second electrode 114 and / or the organic functional layer structure 112 be an electrically conductive layer or have an electrically conductive layer. The first region may comprise or be formed from a transparent or translucent electrically conductive material. The transparent or translucent electrically conductive material may be an organic substance or an organic substance mixture. Alternatively, the transparent or translucent electrically conductive material may be or include a thin metal or a metal oxide (transparent conductive oxide - TCO), for example a p-TCO (hole-conducting TCO) or n-TCO (electron-conducting TCO).

For example, the first electrode 110 a second area 120C exhibit. For example, the organic functional layer structure 112 a second area 120B exhibit. For example, the second electrode 114 a second area 120A exhibit.

In various embodiments, the electrically conductive layer may comprise two or more electrically conductive layers. The two or more electrically conductive layers may be electrically connected together. The two or more electrically conductive layers may have a common physical contact or be free of common physical contact.

For example, the organic functional layer structure 112 and the first electrode 110 a second area 120D exhibit. For example, the organic functional layer structure 112 and the second electrode 114 a second area 120 exhibit. For example, the first electrode 110 and the second electrode 114 a second area 120 exhibit. For example, the first electrode 110 , the organic functional layer structure 112 and the second electrode 114 a second area 120E exhibit.

In other words, the electrically conductive layer may include a first electrically conductive layer and a second electrically conductive layer, wherein the first electrically conductive layer has a first first region and a first second region, and wherein the second electrically conductive layer has a second first region and a second second region. The first second region and the second second region may be identical or different. The first first region and the second first region have at least partially parallel and / or congruent parts. The first second region and the second second region may be formed with respect to one another such that the current flow in the first first region is influenced differently than in the second first region. The first second region and the second second region may be formed with respect to one another such that the current flow in the at least partially parallel and / or congruent parts in the first first region is influenced differently than in the second first region. For example, the first second region and the second second region may be formed one above the other and have the same electrical conductivity.

In other words, the second area 120 may be formed in the planar first region such that the second region 120 influences the current flow or the current path in the areal first area. For example, the second area 120 influence the conductivity in the surface of the first region, for example, interrupt, for example laterally in the electrically conductive layer and / or in the second region by the electrically conductive layer.

In various embodiments, the second region 120 be formed electrically non-conductive. The electrically non-conductive second area 120 may include or be formed from a dielectric. Alternatively, the electrically non-conductive second region 120 comprise or be formed from an electrically conductive substance. For example, the second area 120 be formed as an opened portion of the electrically conductive layer.

In various embodiments, the second region 120 be electrically conductive. The electrical conductivity of the electrically conductive second region 120 may be higher or lower than the electrical conductivity of the first region, as far as this makes sense for the respective application of the second region.

In one embodiment, the second area 120 be formed from the first region, for example, in which a part of the first region is opened, degraded or doped.

In various embodiments, the first region may be the second region 120 surrounded, for example laterally.

In one embodiment, the second area 120 be formed in the first region such that a predetermined information in the optically active region can be displayed. The displayable predetermined information can be, for example, a lettering, an ideogram, a symbol and / or a pictogram.

For example, the second region may be formed such that a flat current path of a current in the planar first region is influenced in a linear current path of the current. For example, the second region can be formed such that the linear current path has one of the following geometric shapes: a meander, a spiral, a hyperbola.

In various embodiments, a method for producing an optoelectronic component 100 (see above) (illustrated in FIG 2 ). The method may include forming a first electrode 110 and forming an organic functional layer structure 112 on or above the first electrode 110 exhibit. The organic functional layer structure 112 may be to convert an electric current into an electromagnetic radiation and / or to convert an electromagnetic radiation into an electric current be formed. Furthermore, the method 110 forming a second electrode 114 on or above the organic functional layer structure 114 exhibit.

Forming the first electrode, forming the second electrode and / or forming the organic functional layer structure may be forming 200 having an electrically conductive layer.

The electrically conductive layer may be formed with a first region 202 become. The first region has a first electrical conductivity. Furthermore, the training can 200 the electrically conductive layer forming 204 a second area 120 have (see 1 ) having a second electrical conductivity. The second electrical conductivity is different from the first electrical conductivity. The second area 120 can be formed in the first area. Due to the second electrical conductivity different from the first electrical conductivity, a defined current distribution in the electrically conductive layer can be effected. As a result, the current flow in the first region can be influenced.

In various embodiments, the second electrical conductivity may be less than the first electrical conductivity and thereby the defined current distribution may have a current flow in the first region, so that a more homogeneous current distribution is formed in the first region relative to an electrically conductive layer without a second region.

In various exemplary embodiments, the second electrical conductivity can be different from the first electrical conductivity and, as a result, the defined current distribution can have a current flow in the first region, so that a predetermined information can be displayed in the optically active region.

The electrically conductive layer may be formed with two or more electrically conductive layers. For example, the electrically conductive layer may be formed with a first electrically conductive layer and a second electrically conductive layer, wherein the first electrically conductive layer having a first first region and a first second region 120 is formed, and wherein the second electrically conductive layer having a second first region and a second second region 120 is trained. The first first region and the second first region may be formed to have at least partially parallel and / or congruent parts. The first second area 120 and the second second area 120 may be formed with respect to each other such that the current flow in the first first region is influenced differently than in the second first region. In one embodiment, the first second region and the second second region may be formed with respect to one another such that the current flow in the at least partially parallel and / or congruent parts in the first first region is influenced differently than in the second first region.

The first region may comprise or be formed from a transparent or translucent electrically conductive material. For example, the transparent or translucent electrically conductive material may be an organic substance or an organic substance mixture; or a metal oxide.

In one embodiment of the method, the second region 120 be formed electrically non-conductive. For example, the electrically non-conductive second region may be a dielectric material; or comprise or be formed from an electrically conductive substance. For example, the second area 120 be formed as an opened portion of the electrically conductive layer.

In one embodiment of the method, the second region 120 be formed electrically conductive. For example, the electrically conductive layer may be formed such that the electrical conductivity of the second region is higher or lower than the electrical conductivity of the first region, insofar as this makes sense for the respective application of the optoelectronic component.

The electrically conductive layer may be formed with two or more electrically conductive layers. When forming a second region in one of the two or more electrically conductive layers, a second region may be formed in the other electrically conductive layer or other electrically conductive layers.

In various embodiments of the method, the electrically conductive layer may be formed structured such that the second region is formed with the first region, i. H. simultaneously or in parallel.

In various embodiments of the method, the second region 120 after forming the first region in the first region.

In various embodiments of the method, the second region 120 be formed from the first area. For example, the second area may be opened by opening a Area of the electrically conductive layer can be formed. Alternatively, the second area 120 be formed by means of a laser ablation and / or UV irradiation of the first region. For example, the second region may be formed by chemically transforming a portion of the electrically conductive layer, for example by means of a degradation of the material of the first region. Alternatively, the second area 120 be formed by doping a portion of the electrically conductive layer.

In various embodiments of the method, the method may further include forming an encapsulation structure 328 (please refer 3 ) such that the optoelectronic component is hermetically sealed with respect to at least one harmful substance, for example water and / or oxygen. The second area 120 For example, after forming the encapsulation structure 328 be formed in the electrically conductive layer.

In various exemplary embodiments of the method, the electrically conductive layer may be formed such that the first region is the second region 120 surrounds, for example laterally.

In various embodiments of the method, the second region 120 be formed in the first area.

In various embodiments of the method, the representable predetermined information may be a lettering, an ideogram, a symbol and / or a pictogram.

For example, the second area 120 be formed such that a flat current path of a current in the flat first region is influenced in a linear current path of the current. For example, the second area 120 be formed such that the line-shaped current path has one of the following geometric shapes: a meander, a spiral, a hyperbola.

In one embodiment, the second area 120C by structuring the first electrode 110 be trained with ITO before the organic functional layer structure 112 is trained.

in one embodiment, the second region may be formed by patterning after the formation of the optoelectronic device, for example by means of a laser ablation, an etching, for example chemically or by means of a plasma; or mechanically, for example by means of a scratch.

In one embodiment, the second region may be formed by patterning the electrically conductive layer, for example by masking the material of the first region and / or the second region.

In one embodiment, the method 200 a combination of said methods.

In various embodiments, the hermetically sealed substrate 102 a carrier 302 and a first barrier layer 304 have (illustrated in 3 ).

The carrier 302 may include or be formed from glass, quartz, and / or a semiconductor material. Furthermore, the carrier may comprise or be formed from a plastic film or a laminate with one or more plastic films. The plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP). Further, the plastic may include or be formed from polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN).

The carrier 302 may comprise or be formed from a metal, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel.

The carrier 302 can be opaque, translucent or even transparent.

The carrier 302 may be part of or form part of a mirror structure.

The carrier 302 may have a mechanically rigid region and / or a mechanically flexible region or may be formed in such a way, for example as a foil.

The carrier 302 may be formed as a waveguide for electromagnetic radiation, for example, be transparent or translucent with respect to the emitted or absorbed electromagnetic radiation of the optoelectronic component 100 ,

The first barrier layer 304 may comprise or be formed from one of the following materials: alumina, zinc oxide, zirconia, titania, hafnia, tantala, lanthania, silica, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped Zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof.

The first barrier layer 304 may be formed by one of the following methods: Atomic Layer Deposition (ALD), for example, Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma-less Atomic Layer Deposition (PLALD); a chemical vapor deposition (CVD) process, for example, plasma enhanced chemical vapor deposition (PECVD) or plasmaless plasma vapor deposition (PLCVD); or alternatively by other suitable deposition methods.

At a first barrier layer 304 having multiple sublayers, all sublayers can be formed by an atomic layer deposition method. A layer sequence comprising only ALD layers may also be referred to as "nanolaminate".

At a first barrier layer 304 comprising a plurality of sublayers may include one or more sublayers of the first barrier layer 304 be deposited by a deposition method other than an atomic layer deposition method, for example, by a vapor deposition method.

The first barrier layer 304 may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example, a layer thickness of about 10 nm to about 100 nm according to an embodiment, for example, about 40 nm according to an embodiment.

The first barrier layer 304 may comprise one or more high refractive index materials, for example one or more high refractive index material (s), for example having a refractive index of at least 2.

Furthermore, it should be pointed out that in various embodiments also entirely on a first barrier layer 304 can be omitted, for example in the event that the carrier 302 hermetically sealed, for example, comprises glass, metal, metal oxide or is formed therefrom.

The organic functional layer structure 112 For example, a first organic functional layered structure unit 316 , an interlayer structure 318 and a second organic functional layer structure unit 320 exhibit.

In 3 is an optoelectronic device 100 with a first organic functional layered structure unit 316 and a second organic functional layered structure unit 320 illustrated. In various embodiments, the organic functional layer structure 112 but also have more than two organic functional layer structures, for example 3, 4, 5, 6, 7, 8, 9, 10, or even more, for example 15 or more, for example 70.

The first organic functional layered structure unit 316 and optionally further organic functional layer structures may be the same or different, for example, have a same or different emitter material. The second organic functional layered structure unit 320 , or the other organic functional layer structure units may, as one of the embodiments described below, the first organic functional layer structure unit 316 be educated. The first organic functional layered structure unit 316 may according to one of the embodiment of the organic functional layer structure 112 be trained and vice versa.

The first organic functional layered structure unit 316 may comprise a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer, and an electron injection layer.

In an organic functional layered structure unit 112 one or more of said layers may be provided, wherein like layers may have physical contact, may only be electrically connected to each other, or may even be formed electrically insulated from each other, for example, formed side by side. Individual layers of said layers may be optional.

A hole injection layer may be on or over the first electrode 110 be educated. The hole injection layer may include one or more of the following materials exhibit or can be formed therefrom: HAT-CN, Cu (I) pFBz, MoO _x, WO _x, VO _x, ReO _x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, F16CuPc; NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine); beta-NPB N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine); TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro); DMFL-TPD N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DPFL-TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9- diphenyl-fluorene); DPFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene); Spiro-TAD (2,2 ', 7,7'-tetrakis (n, n-diphenylamine) -9,9'-spirobifluorene); 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) phenyl] -9H-fluorene; 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) phenyl] -9H-fluorene; 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl-amino) -phenyl] -9-fluoro; N, N'-bis (phenanthrene-9-yl) -N, N'-bis (phenyl) benzidine; 2,7-bis [N, N-bis (9,9-spiro-bifluorenes-2-yl) amino] -9,9-spiro-bifluorene; 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene; 2,2'-bis (N, N-di-phenyl-amino) 9,9-spiro-bifluorene; Di- [4- (N, N-ditolyl-amino) -phenyl] cyclohexane; 2,2 ', 7,7'-tetra (N, N-di-tolyl) amino-spiro-bifluorene; and / or N, N, N ', N'-tetra-naphthalen-2-yl-benzidine.

The hole injection layer may have a layer thickness in a range of about 10 nm to about 1000 nm, for example in a range of about 30 nm to about 300 nm, for example in a range of about 50 nm to about 200 nm.

On or above the hole injection layer, a hole transport layer may be formed. The hole transport layer may comprise or be formed from one or more of the following materials: NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) benzidine); beta-NPB N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine); TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro); DMFL-TPD N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DPFL-TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene); DPFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene); Spiro-TAD (2,2 ', 7,7'-tetrakis (n, n-diphenylamino) -9,9'-spirobifluorene); 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) -phenyl] -9H-fluorene; 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) phenyl] -9H-fluorene; 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl-amino) -phenyl] -9-fluoro; N, N'-bis (phenanthrene-9-yl) -N, N'-bis (phenyl) benzidine; 2,7-bis [N, N-bis (9,9-spiro-bifluorenes-2-yl) amino] -9,9-spiro-bifluorene; 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene; 2,2'-bis (N, N-di-phenyl-amino) 9,9-spiro-bifluorene; Di- [4- (N, N-ditolyl-amino) -phenyl] cyclohexane; 2,2 ', 7,7'-tetra (N, N-di-tolyl) amino-spiro-bifluorene; and N, N, N ', N'-tetra-naphthalen-2-yl-benzidine, a tertiary amine, a carbazole derivative, a conductive polyaniline and / or polyethylenedioxythiophene.

The hole transport layer may have a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

On or above the hole transport layer, an emitter layer may be formed. Each of the organic functional layered structure units 316 . 320 may each have one or more emitter layers, for example with fluorescent and / or phosphorescent emitters.

An emitter layer may include or be formed from organic polymers, organic oligomers, organic monomers, small organic non-polymeric molecules, or a combination of these materials.

The optoelectronic component 100 may include or be formed from one or more of the following materials in an emitter layer: organic or organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (for example 2- or 2-substituted poly-p-phenylenevinylene) and metal complexes such as iridium complexes as blue phosphorescent FIrPic (bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) iridium III), green phosphorescing Ir (ppy) ₃ (tris (2-phenylpyridine) iridium III), red phosphorescent Ru (dtb-bpy) ₃ x 2 (PF ₆ ) (tris [4,4'-di-tert-butyl- (2,2 ') -bipyridine] ruthenium (III) complex) and blue fluorescent DPAVBi (4 , 4-bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9,10-bis [N, N-di (p-tolyl) amino] anthracene) and red fluorescent DCM2 ( 4-dicyanomethylene) -2-methyl-6-julolidyl-9-enyl-4H-pyran) as a non-polymeric emitter.

Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, it is possible to use polymer emitters which can be deposited, for example, by means of a wet-chemical method, for example a spin-coating method (also referred to as spin coating).

The emitter materials may be suitably embedded in a matrix material, for example a technical ceramic or a polymer, for example an epoxide; or a silicone.

In various embodiments, the emitter layer may have a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

The emitter layer may be single-color or different-colored (for example blue and yellow or blue, green and red) emitting emitter materials exhibit. Alternatively, the emitter layer may comprise a plurality of sub-layers which emit light of different colors. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary Radiation produces a white color impression.

The organic functional layered structure unit 316 may include one or more emitter layers configured as a hole transport layer.

Furthermore, the organic functional layer structure unit 316 have one or more emitter layers, which is / are designed as an electron transport layer.

On or above the emitter layer, an electron transport layer can be formed, for example deposited.

The electron transport layer may include or be formed from one or more of the following materials: NET-18; 2,2 ', 2' '- (1,3,5-Benzinetriyl) -tris (1-phenyl-1-H-benzimidazole); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazoles, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthrolines (BCP); 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazoles; 1,3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl] benzene; 4,7-diphenyl-1,10-phenanthroline (BPhen); 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazole; Bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum; 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazo-2-yl] -2,2'-bipyridyl; 2-phenyl-9,10-di (naphthalen-2-yl) anthracenes; 2,7-bis [2- (2,2, -bipyridine-6-yl) -1,3,4-oxadiazo-5-yl] -9,9-dimethylfluorene; 1,3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazo-5-yl] benzene; 2- (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; Tris (2,4,6-trimethyl-3- (pyridin-3-yl) phenyl) borane; 1-methyl-2- (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5-f] [1,10] phenanthroline; Phenyl-dipyrenylphosphine oxides; Naphthalenetetracarboxylic dianhydride or its imides; Perylenetetracarboxylic dianhydride or its imides; and silanol-based materials containing a silacyclopentadiene moiety.

The electron transport layer may have a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

An electron injection layer may be formed on or above the electron transport layer. The electron injection layer may include or be formed from one or more of the following materials: NDN-26, MgAg, Cs ₂ CO ₃ , Cs ₃ PO ₄ , Na, Ca, K, Mg, Cs, Li, LiF; 2,2 ', 2''- (1,3,5-Benzinetriyl) -tris (1-phenyl-1-H-benzimidazole); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazoles, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthrolines (BCP); 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazoles; 1,3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl] benzene; 4,7-diphenyl-1,10-phenanthroline (BPhen); 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazole; Bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum; 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazo-2-yl] -2,2'-bipyridyl; 2-phenyl-9,10-di (naphthalen-2-yl) anthracenes; 2,7-bis -9,9-dimethylfluarene [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl]; 1,3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiaza-5-yllbenzene; 2- (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; Tris (2,4,6-trimethyl-3- (pyridin-3-yl) phenyl) borane; 1-methyl-2- (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5-f] [1,10] phenanthroline; Phenyl-dipyrenylphosphine oxides; Naphthalenetetracarboxylic dianhydride or its imides; Perylenetetracarboxylic dianhydride or its imides; and silanol-based materials containing a silacyclopentadiene moiety.

The electron injection layer may have a layer thickness in a range of about 5 nm to about 200 nm, for example in a range of about 20 nm to about 50 nm, for example about 30 nm.

For an organic functional layer structure 112 with two or more organic functional layered structure units 316 . 320 , the second organic functional layered structure unit 320 above or next to the first functional layered structure units 316 be educated. Electrically between the organic functional layer structure units 316 . 320 can be an interlayer structure 318 be educated.

In various embodiments, the interlayer structure 318 as an intermediate electrode 318 be formed, for example according to one of the embodiments of the first electrode 110 , An intermediate electrode 318 can be electrically connected to an external voltage source. The external voltage source can be at the intermediate electrode 318 For example, provide a third electrical potential. The intermediate electrode 318 However, no external electrical Have connection, for example by the intermediate electrode has a floating electrical potential.

In various embodiments, the interlayer structure 318 as a carrier pair generation layered structure 318 (charge generation layer CGL) be formed. A carrier pair generation layered structure 318 may comprise one or more electron-conducting charge carrier pair generation layer (s) and one or more hole-conducting charge carrier pair generation layer (s). The electron-conducting charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) may each be formed of an intrinsically conductive substance or a dopant in a matrix. The carrier pair generation layer structure 318 should be designed with respect to the energy levels of the electron-conducting charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) such that separation occurs at the interface of an electron-conducting charge carrier pair generation layer with a hole-conducting charge carrier generation layer can be done by electron and hole. The carrier pair generation layer structure 318 may further comprise a diffusion barrier between adjacent layers.

Each organic functional layered structure unit 316 . 320 For example, it may have a layer thickness of at most approximately 3 μm, for example a layer thickness of at most approximately 1 μm, for example a layer thickness of approximately approximately 300 nm.

The optoelectronic component 100 Optionally, it may further comprise other organic functional layers, for example, disposed on or over the one or more emitter layers or on or over the one or more electron transport layer (s). The further organic functional layers can be, for example, internal or external coupling-in / coupling-out structures that control the functionality and thus the efficiency of the optoelectronic component 100 improve further. In various embodiments, the encapsulation structure 328 a second barrier layer 308 , a coherent connection layer 322 and a cover 324 have (illustrated in 3 ).

On the second electrode 114 may be the second barrier layer 308 be educated.

The second barrier layer 308 may also be referred to as thin film encapsulation (TFE). The second barrier layer 308 may according to one of the embodiments of the first barrier layer 304 be educated.

It should also be pointed out that, in various exemplary embodiments, it is also entirely a matter of a second barrier layer 308 can be waived. In such an embodiment, the optoelectronic component 100 For example, have a further encapsulation structure, whereby a second barrier layer 308 can be optional, for example, a cover 324 For example, a Kavitätsglasverkapselung or metallic encapsulation.

Furthermore, in various exemplary embodiments, one or more input / output layers in the optoelectronic component can additionally be provided 100 be formed, for example, an external Auskoppelfolie on or above the carrier 302 (not shown) or an internal coupling-out layer (not shown) in the layer cross-section of the optoelectronic component 100 , The input / outcoupling layer may have a matrix and scattering centers distributed therein, the average refractive index of the input / outcoupling layer being greater or smaller than the average refractive index of the layer from which the electromagnetic radiation is provided. Furthermore, in various exemplary embodiments, one or more antireflection layers (for example, combined with the second barrier layer 308 ) in the optoelectronic component 100 be provided.

In various embodiments, on or above the second barrier layer 308 a coherent connection layer 322 be provided, for example, an adhesive or a paint. By means of the coherent connection layer 322 can a cover 324 on the second barrier layer 308 be connected conclusively, for example, be glued.

A coherent connection layer 322 For example, particles that diffuse electromagnetic radiation, for example light-scattering particles, can comprise a transparent material. This allows the coherent connection layer 322 act as a scattering layer and lead to an improvement of the color angle distortion and the Auskoppeleffizienz.

Dielectric scattering particles may be provided as light-scattering particles, for example of a metal oxide, for example silicon oxide (SiO ₂ ), zinc oxide (ZnO), zirconium oxide (ZrO ₂ ), indium tin oxide (ITO) or indium zinc oxide (IZO), Gallium oxide (Ga ₂ O _x ) alumina, or titanium oxide. Other particles may also be suitable provided they have a refractive index that is different from the effective refractive index of the matrix of the coherent bonding layer 322 is different, for example, air bubbles, acrylate, or glass bubbles. Furthermore, for example, metallic nanoparticles, Metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles.

The conclusive connection layer 322 may have a layer thickness of greater than 1 micron, for example, a layer thickness of several microns. In various embodiments, the conclusive tie layer 322 include or be a lamination adhesive.

In various embodiments, between the second electrode 114 and the coherent link layer 322 or an electrically insulating layer (not shown), for example SiN, for example with a layer thickness in a range from about 300 nm to about 1.5 μm, for example with a layer thickness in a range from about 600 nm to about 1 μm to protect electrically unstable materials, for example during a wet chemical process.

In various embodiments, a conclusive tie layer may be used 322 be optional, for example, if the cover 324 directly on the second barrier layer 308 is formed, for example, a cover 324 made of glass, which is formed by means of plasma spraying.

On or above the electrically active area 106 Furthermore, a so-called getter layer or getter structure, for example a laterally structured getter layer, can be arranged (not shown).

On or above the coherent connection layer 322 can a cover 324 be educated. The cover 324 can by means of the coherent connection layer 322 with the electrically active area 106 be coherently connected and protect it from harmful substances. The cover 324 For example, a glass cover 324 , a metal foil cover 324 or a sealed plastic film cover 324 be. The glass cover 324 For example, by means of a frit bonding / glass soldering / seal glass bonding by means of a conventional glass solder in the geometric edge regions of the organic optoelectronic component 100 with the second barrier layer 308 or the electrically active area 106 be connected conclusively.

The cover 324 and / or the conclusive tie layer 322 may have a refractive index (for example at a wavelength of 633 nm) of 1.55.

In 4A is a schematic plan view of an optoelectronic device 100 with a planar optically active area 106 illustrated. The optically active area 106 can also be considered an optically active surface when considering the flat dimension 402 or optically active area 106 . 402 be designated.

In the areal optically active area 402 can be second areas 120 be formed such that the current flow or the current path is influenced in at least one planar, electrically conductive layer.

In various embodiments, the optoelectronic component 100 be designed as a planar organic light-emitting diode.

The planar organic light-emitting diode may, for example, be an organic light-emitting diode with a four-sided contact with a dimension of 20 × 20 cm ² (illustrated in FIG 4A ).

The planar organic light emitting diode may be formed such that the luminance and / or the color locus of the emitted electromagnetic radiation is locally dependent on the local electrical current through the organic light emitting diode. The electric current has an electric current and an electric voltage. The second areas 120 can change the stress distribution in the optically active surface 402 to lead.

By means of the second area 120 can the luminance distribution (illustrated in 4B ) and / or the color locus distribution in the optically active region 402 to be influenced.

In 4B is a decrease in luminance from the edge of the optically active surface 402 to the center of the optically active surface visible. The second area 120 can be designed such that it leads to a redistribution of the voltage in the optically active surface 402 comes. This can increase the uniformity or homogeneity of the luminance in the optically active surface 402 be achieved. For example, a homogeneity of, for example, 48.5% with respect to the luminance distribution of an organic light-emitting diode without second regions (illustrated in FIG 6A ) with a homogeneity of only 28.6% (at 1000 nits).

The planar organic light-emitting diode can be, for example, an organic light-emitting diode with a four-sided contact with a dimension of 12 × 20 cm ² . In 5 is a decrease in luminance from the edge of the optically active surface 402 to the center of the optically active surface visible. By means of second areas 120 can the luminance distribution (illustrated in 5 ) and / or the color locus distribution in the optically active region 402 to be influenced. For example, the first electrode 110 and the second electrode 114 second areas 120 exhibit. The second area of the first electrode 110 can in other areas of the optically active area 402 be formed as the second region of the second electrode. For example, the homogeneity of the luminance distribution of, for example, 78% can be achieved in comparison with the luminance distribution of an organic light-emitting diode without second regions (illustrated in FIG 6B ) with a homogeneity of only 50% (at 1000 nits).

In various embodiments, the first region and second region electrically conductive layer may be an organic functional layer structure, for example as illustrated in FIG 7A , In various embodiments, the optoelectronic component 100 two or more electrically conductive layers having a first region and a second region. The second region may include one or more second regions isolated from each other by the first region.

In an exemplary embodiment with a first organic functional layer structure unit 316 and a second organic functional layered structure unit 318 by means of an interlayer structure 318 , For example, an intermediate electrode 318 , can be the first electrode 110 , the second electrode 114 , the first organic functional layered structure unit 316 , the second organic functional layered structure unit 318 and / or the interlayer structure 318 be designed as electrically conductive layer with the first area and second area - see also description above.

In one embodiment, the first organic functional layer structure unit 316 and the second organic functional layered structure unit 320 each having a second region - for example, illustrated in FIG 7B , The second areas 120B the first organic functional layered structure unit 316 and the second area 120E second organic functional layered structure unit 320 can be designed coordinated so that by means of the structuring of the electrically conductive layers 316 . 320 a predetermined information can be displayed, for example, a symbol, a logo, a pictogram, an ideogram and / or a lettering - for example, illustrated in 7C , The second areas 120B the electrically conductive layers 316 . 320 For example, they can be matched to one another such that by means of the second regions 120B that of the optoelectronic component 100 emitted light has a color contrast. For example, by means of the second areas 120B a color contrast in the mixed light from that of the first organic functional layer structure unit 316 and the second organic functional layer structure unit 320 be generated. In other words: in the optically active surface of the optoelectronic component 100 , For example, luminous area, different electromagnetic radiation can be emitted and / or absorbed - in 7B , C as arrows / reference 702 . 704 . 706 . 708 ,

• I) mit erstem Bereich in der ersten organischen funktionellen Schichtenstruktur-Einheit 316 und zweitem Bereich in der zweiten organischen funktionellen Schichtenstruktur-Einheit 320 die elektromagnetische Strahlung der ersten organischen funktionellen Schichtenstruktur-Einheit 316 emittiert oder absorbiert veranschaulich mit dem Pfeil/Bezugszeichen 702 in 7B, C, beispielsweise ein rot-grünes Licht;
• II) mit erstem Bereich in der ersten organischen funktionellen Schichtenstruktur-Einheit 316 und erstem Bereich in der zweiten organischen funktionellen Schichtenstruktur-Einheit 320 eine Mischung der elektromagnetischen Strahlung von erster organischer funktioneller Schichtenstruktur-Einheit 316 und zweiter organischer funktioneller Schichtenstruktur-Einheit 320 emittiert und/oder absorbiert – veranschaulich mit dem Pfeil/Bezugszeichen 704 in 7B, C, beispielsweise ein weißes Licht;
• III) mit zweitem Bereich in der ersten organischen funktionellen Schichtenstruktur-Einheit 316 und erstem Bereich in der zweiten organischen funktionellen Schichtenstruktur-Einheit 320 die elektromagnetische Strahlung der zweiten organischen funktionellen Schichtenstruktur-Einheit 320 emittiert oder absorbiert – veranschaulich mit Pfeil Bezugszeichen 706 in 7B, C, beispielsweise ein blaues Licht; und
• IV) mit zweitem Bereich in der ersten organischen funktionellen Schichtenstruktur-Einheit 316 und zweitem Bereich in der zweiten organischen funktionellen Schichtenstruktur-Einheit 320 keine elektromagnetische Strahlung von dem optoelektronischen Bauelement emittiert oder absorbiert – veranschaulich mit Pfeil Bezugszeichen 708 in 7B, C, beispielsweise ein schwarzes Erscheinungsbild.

For example, in the area of the illuminated area:

• I) with first region in the first organic functional layer structure unit 316 and second region in the second organic functional layered structure unit 320 the electromagnetic radiation of the first organic functional layer structure unit 316 emits or absorbs with the arrow / reference numeral 702 in 7B , C, for example, a red-green light;
• II) with first region in the first organic functional layer structure unit 316 and first region in the second organic functional layered structure unit 320 a mixture of the electromagnetic radiation from the first organic functional layer structure unit 316 and second organic functional layered structure unit 320 emitted and / or absorbed - exemplified by the arrow / reference 704 in 7B , C, for example a white light;
• III) with second region in the first organic functional layered structure unit 316 and first region in the second organic functional layered structure unit 320 the electromagnetic radiation of the second organic functional layer structure unit 320 emitted or absorbed - illustrated by arrow reference numerals 706 in 7B , C, for example, a blue light; and
• IV) with second region in the first organic functional layered structure unit 316 and second region in the second organic functional layered structure unit 320 does not emit or absorb any electromagnetic radiation from the optoelectronic device - illustrated by arrow sign 708 in 7B , C, for example, a black appearance.

Analogously, further color contrasts can be formed with a plurality of organic functional layer structure units.

Furthermore, by means of differently structured organic functional layer structure units 316 . 320 by means of an independent Control of the organic functional layer structure unit 316 . 320 the different predetermined information of differently structured organic functional layer structure units 316 . 320 being represented. For example, in which the first organic functional layer structure unit 316 and the second organic functional layer structure unit 320 not be energized at the same time.

In various embodiments, the second region may be at least translucent, for example transparent, with respect to the electromagnetic radiation that can be emitted and / or absorbed by the optoelectronic component.

In one embodiment, the first electrode is 110 fully formed from ITO. On the first electrode 110 locally an electrically non-conductive structure is formed, for example, a dielectric or electrical insulator applied, for example by means of a screen printing, pad printing and / or ink jet method. Subsequently, the organic functional layer structure 112 . 316 For example, be formed over the entire surface of the first electrode and the electrically non-conductive structure. The electrically non-conductive structure thus forms the second region in the organic functional layer structure.

The optoelectronic component having an electrically conductive layer with the first region and the second region can be designed, for example, as a white OLED, colored OLED and / or transparent OLED.

In various embodiments, the second region is formed such that the second region has approximately the same refractive index (refractive index difference less than about 0.05) as the first region, for example in the wavelength range of visible light. When switched off or de-energized state (off-state) of the optoelectronic component, the pattern formed by the second region in the first region, for example, inconspicuous or not visible, for example, in which the electrically non-conductive structure is formed from a transparent insulating ink or paste or has. In another embodiment, the electrically non-conductive structure may be formed to be visible "off-state," that is, to have a color contrast and / or refractive index contrast to the organic functional layer structure. By way of example, the electrically non-conductive structure may be formed from or may comprise an insulating ink or paste with any desired color pigments, for example colored or black.

The electrically non-conductive structure should be designed with respect to the material nature and the shape, for example, thickness, such that there is no electrical breakdown through the electrically non-conductive structure under operating and / or storage conditions of the optoelectronic component.

In one embodiment, the electrically nonconductive structure may be formed of a highly insulating, highly transparent printable material, such as "ZEACOAT ES2110" from ZEON Corporation, having a transmission greater than 99% and an electrical breakdown voltage of 6.4 MV / cm.

In one embodiment, freestanding light patterns are formed by applying to the first electrode 110 for example, formed as an anode, or the interlayer structure 318 , for example, trained. as intermediate electrode 318 by means of a printing process, for example an inkjet printing, which prints an adjustable pattern with / of electrically insulating material. These printed areas in the OLED are electrically insulated and can therefore be optically inactive, for example not light up. The insulating material is, for example, a polymer-based dielectric. The intermediate electrode 318 should have sufficiently high conductivity to pass over the optically inactive ("deactivated") regions in the first organic functional layered structure unit 316 to achieve a homogeneous current distribution, thus making the second organic functional layered structure unit 320 from the electrically isolated, second areas 102B is not affected. The for the intermediate electrode 318 minimum conductivity may be due to the lateral feature size of the electrically isolated second regions 102 be dependent, since these electrically isolated, second areas 102 in the second organic functional layered structure unit 320 be re-powered. The optoelectronic component 100 can then, for example, as in a conventional method over the entire surface with organic functional layer structure 112 . 316 and second electrode 114 , For example, formed as a cathode, are formed, for example, be vapor-deposited. This makes it possible to dispense with further structuring or special masking for representing the pattern.

In various embodiments, optoelectronic components and methods for producing optoelectronic components are provided with which it is possible to adjust the optical activity of the optically active region, for example to reduce the inhomogeneity of the optically active surface of the optoelectronic component.

An interruption of the conductivity of the first region by means of the second region may lead to an influence of the local current flow in the first region. Arranging the second area can thus lead to a change of a voltage difference in the first area, for example local voltage differences can be compensated by means of second areas. As a result, the inhomogeneity of the luminous area of an organic light-emitting diode can be reduced, and the stress and aging of organic solar cells and / or photodetectors can be compensated. For an interruption of the conductivity in a first region, extremely thin, electrically nonconducting, linear regions may be sufficient, for example with a width of less than 500 nm. The second regions may therefore obviously not be visible.

Furthermore, in the case of an optoelectronic component with stacked, different emitter and / or absorber layers, the emitter and / or absorber layers can be operated independently of each other laterally structured.

In other words, any desired, for example free-standing, optically inactive, for example non-luminous, patterns in the optically active surface of the optoelectronic component, for example in the luminous area of an organic light-emitting diode, can thereby be formed. For example, in an OLED with stacked color units, each color unit can be provided with its own pattern, so that, depending on the number of color units, differently colored patterns / logos / graphics / etc. can be produced or represented. For example, the patterns may be formed without an additional high vacuum process step prior to forming the organic functional layer structure. There are any patterns possible, which are also possible as inexpensive custom-made, as any pattern can be incorporated into an existing component design. Furthermore, the efficiency of the optoelectronic component can be higher with respect to optically filtering methods for displaying a pattern, since the regions of the pattern can be completely electrically isolated and thus optically and electrically inactive. Furthermore, the smallest structures that can be laterally formed and displayed, depending on the production method of the second area, for example, in the range of print resolution or track width / drop size of the printer are, for example, ~ 30 microns. The representable structures can thus be considerably smaller than is possible by means of conventional shadow mask processes.

Claims (16)

Optoelectronic component ( 100 ) with an optically active region ( 106 . 402 ), the optically active region ( 106 . 402 ) comprising: a first electrode ( 110 ), • a second electrode ( 114 ), and • an organic functional layer structure ( 112 ), The organic functional layer structure ( 112 ) between the first electrode ( 110 ) and the second electrode ( 114 ), and - wherein the organic functional layer structure ( 112 ) is adapted to convert an electric current into an electromagnetic radiation and / or to convert an electromagnetic radiation into an electric current; Where the first electrode ( 110 ), the second electrode ( 114 ) and / or the organic functional layer structure ( 112 ) comprise an electrically conductive layer, wherein the electrically conductive layer has a first region which has a first electrical conductivity; and a second area ( 120 ) having a second electrical conductivity, wherein the second region ( 120 ) is formed in the first region and causes a defined current distribution in the electrically conductive layer due to its second electrical conductivity; Wherein the second electrical conductivity is less than the first electrical conductivity and thereby the defined current distribution has a current flow in the first region, so that a more homogeneous current distribution is formed in the first region relative to an electrically conductive layer without a second region ( 120 ). Optoelectronic component ( 100 ) according to claim 1, wherein the second region ( 120 ) in the first area ( 106 . 402 ) is configured such that a predetermined information in the optically active region ( 106 . 402 ) can be displayed. Optoelectronic component ( 100 ) with an optically active region ( 106 . 402 ), the optically active region ( 106 . 402 ) comprising: a first electrode ( 110 ), • a second electrode ( 114 ), and • an organic functional layer structure ( 112 ), The organic functional layer structure ( 112 ) between the first electrode ( 110 ) and the second electrode ( 114 ), and - wherein the organic functional layer structure ( 112 ) to convert an electric current into an electromagnetic radiation and / or is adapted to convert an electromagnetic radiation into an electric current; Where the first electrode ( 110 ), the second electrode ( 114 ) and / or the organic functional layer structure ( 112 ) comprise an electrically conductive layer, wherein the electrically conductive layer has a first region which has a first electrical conductivity; and a second area ( 120 ) having a second electrical conductivity, wherein the second region ( 120 ) is formed in the first region and due to its second electrical conductivity causes a defined current distribution in the electrically conductive layer; • wherein the second electrical conductivity is different from the first electrical conductivity and thereby the defined current distribution has a current flow in the first region, so that a predetermined information in the optically active region can be displayed. Optoelectronic component ( 100 ) according to one of claims 1 to 3, wherein the first region comprises or is formed from a transparent or translucent electrically conductive material. Optoelectronic component ( 100 ) according to claim 4, wherein the transparent or translucent electrically conductive material is or comprises an organic substance, an organic substance mixture, and / or a metal oxide. Optoelectronic component ( 100 ) according to one of claims 1 to 5, wherein the second region ( 120 ) is formed electrically non-conductive. Optoelectronic component ( 100 ) according to one of claims 1 to 6, wherein the second region ( 120 ) is formed as an opened portion of the electrically conductive layer. Optoelectronic component ( 100 ) according to one of claims 1 to 5, wherein the second region ( 120 ) is electrically conductive, in particular of the substance or mixture of the electrically conductive layer. Optoelectronic component ( 100 ) according to one of claims 2 to 8, wherein the predetermined information is a lettering, an ideogram, a symbol and / or a pictogram. Method for producing an optoelectronic component ( 100 ), the method comprising: • forming a first electrode ( 110 ), • forming an organic functional layer structure ( 112 ) on or above the first electrode ( 110 ), The organic functional layer structure ( 112 ) is formed to convert an electric current into an electromagnetic radiation and / or to convert an electromagnetic radiation into an electric current; Forming a second electrode ( 114 ) on or above the organic functional layer structure ( 112 ), and wherein the forming of the first electrode ( 110 ), forming the second electrode ( 114 ) and / or the formation of the organic functional layer structure ( 112 ) a training ( 200 ) of an electrically conductive layer, wherein the electrically conductive layer is formed with a first region having a first electrical conductivity; and a second area ( 120 ) is formed, which has a second electrical conductivity, wherein the second region ( 120 ) is formed in the first region and due to its second electrical conductivity a causes defined current distribution in the electrically conductive layer; Wherein the second electrical conductivity is less than the first electrical conductivity and thereby the defined current distribution has a current flow in the first region, so that a more homogeneous current distribution is formed in the first region relative to an electrically conductive layer without a second region ( 120 ). Method for producing an optoelectronic component ( 100 ), the method comprising: • forming a first electrode ( 110 ), • forming an organic functional layer structure ( 112 ) on or above the first electrode ( 110 ), The organic functional layer structure ( 112 ) is formed to convert an electric current into an electromagnetic radiation and / or to convert an electromagnetic radiation into an electric current; Forming a second electrode ( 114 ) on or above the organic functional layer structure ( 112 ), and wherein the forming of the first electrode ( 110 ), forming the second electrode ( 114 ) and / or the formation of the organic functional layer structure ( 112 ) a training ( 200 ) of an electrically conductive layer, wherein the electrically conductive layer is formed with a first region having a first electrical conductivity; and a second area ( 120 ) is formed, which has a second electrical conductivity, wherein the second region ( 120 ) is formed in the first region and causes a defined current distribution in the electrically conductive layer due to its second electrical conductivity; • wherein the second electrical conductivity is different from the first electrical conductivity and thereby the defined current distribution has a current flow in the first region, so that a predetermined information in the optically active region is represented. Method according to one of claims 10 or 11, wherein the electrically conductive layer is formed in a structured manner such that the second region ( 120 ) is formed with the first area. Method according to one of claims 10 to 12, wherein the second area ( 120 ) is formed by means of a laser ablation and / or UV irradiation of the first region. Method according to one of claims 10 to 12, wherein the second area ( 120 ) is formed by chemically transforming a portion of the electrically conductive layer. Method according to claims 10 to 12, wherein the second region ( 120 ) is formed by doping a portion of the electrically conductive layer. Method according to one of claims 10 to 15, further comprising: forming an encapsulation structure such that the optoelectronic component ( 100 ) is hermetically sealed with respect to at least one harmful substance, preferably water and / or oxygen, the second region ( 120 ) is formed after forming the encapsulation structure in the electrically conductive layer.

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