DE102013112270B4 - Component arrangement - Google Patents

Abstract

Component arrangement with a first optoelectronic component (10) and at least one second optoelectronic component (70), and with an electrically conductive second plug-in element (65), which is connected via a coupling element (50) of the first optoelectronic component (10) to a contact area (32, 34) of the first optoelectronic component (10) is coupled and which is electrically coupled via a further coupling element (50) of the second optoelectronic component (70) to a contact area (32, 34) of the second optoelectronic component (70), and so on first optoelectronic component (10) is electrically coupled to the second optoelectronic component (70), wherein the first optoelectronic component (10) and the at least one second optoelectronic component (70) have: - a carrier body (12), - an optoelectronic layer structure, which is formed above the carrier body (12) and which has at least one contact region (32, 34) for electrically contacting the optoelectronic layer structure, - a cover body (38) which is arranged above the optoelectronic layer structure, - at least one contact recess (42, 44) which extends through the carrier body (12) and the cover body (38) and which has an undercut (48) in the contact area (32, 34), at least part of the contact area (32, 34) being in the undercut (48). ) is exposed, and - at least one coupling element (50), which has a plate-shaped insert element (52) and a holding element (54) for receiving an electrical conductor, for electrically contacting the optoelectronic component (10, 70), the insert element (52 ) is at least partially arranged in the undercut (48) and electrically coupled to the contact area (32, 34), wherein the optoelectronic layer structure has an encapsulation layer (24) and / or an adhesive layer (36), and the contact recess (42, 44) extends through the encapsulation layer (24) and/or through the adhesive layer (36).

Description

The invention relates to a component arrangement. An optoelectronic component and a method for producing an optoelectronic component are also described.

Conventional optoelectronic components, for example OLEDs, are usually made up of a substrate, optically functional layers, for example organic functional layers, electrode layers, an encapsulation layer, for example a thin film encapsulation layer, to protect against the effects of moisture and a cover body, for example a cover plate, and are known, for example EP 2 442 008 A2 , DE 10 2012 210 484 A1 , US 2008 / 0 297 072 A1 , WO 2011/ 068 277 A1 , DE 10 2011 017 790 A1 . In many cases, a heat sink and/or a heat distributor, for example a metal plate or a metal foil, is laminated onto the cover glass. The cover plate serves as mechanical protection and as an additional moisture barrier and, like the substrate, is usually made of solid glass. The cover glass is usually laminated over the entire surface of the substrate as part of the manufacturing process. The encapsulation layer is formed between the cover plate and the substrate and typically extends over the entire substrate.

During the manufacturing process, several optoelectronic components are produced in a component composite and then separated, for example by scoring and breaking the substrate and the cover plate. In the component assembly, the substrate and the cover plate each extend in one piece over several optoelectronic components. In the component composite, electrical contacts of the electrode layers are therefore not accessible, which prevents electrical contacting and thus the possibility of electro-optical characterization early in the process. When scoring and breaking into individual components, the cover glass over the contacts is removed. The encapsulation layer on the contacts can then optionally be removed, for example by means of laser ablation. Only after these process steps can the fully processed and in particular isolated optoelectronic component be electrically contacted and electro-optically characterized.

With this method, electro-optical measurements can only be carried out relatively late in the production process and with increased effort when handling individual optoelectronic components.

Alternatively, it is known to guide the conductor tracks of all optoelectronic components to the edge of the component assembly. However, to do this, a usable area that would otherwise be usable for the individual optoelectronic components must be sacrificed, which means that the utilization of the substrate and in particular the substrate surface becomes worse. Furthermore, with this approach, an additional process step is necessary to expose the encapsulation in the edge area of the component composite before further processing. In addition, different voltages can then occur in the optoelectronic component due to different line lengths, which impairs homogeneous light generation during operation.

In addition, the conventional optoelectronic component at the contacts essentially consists of the glass substrate without a protective cover plate and is particularly susceptible to damage due to corner or edge breakouts. Furthermore, in the conventional optoelectronic component, the laminating adhesive is applied in a structured manner, which is relatively complex so that the contacts can subsequently be easily exposed. Furthermore, a metal plate cannot be applied directly to the encapsulation layer as a heat sink or heat distributor, since the metal plate cannot be separated within the component composite in order to expose the contacts.

The exposed contacts of the optoelectronic components can be made using spring pins, conductive adhesive, conductive paste, crimps, etc. or via ACF (Anisotropic Conductive Film) bonded circuit boards, which have a solderable metallic surface for soldering on further contact elements (e.g. pins, eyelets, cables, etc.). Make available, can be contacted at almost any point. For example, contact strips of the optoelectronic components can be coupled to contact pins or wires using different processes, for example ACF bonding, US welding, or (US) soldering. Each of these processes requires a system with corresponding operating costs. It is also possible to use liquid conductive adhesive for contacting wires and pins, but an appropriate system is also necessary for a clean process. In addition, the curing temperatures for such conductive adhesives are usually over 100° Celsius, which can impair the performance of the optoelectronic component. The contact elements are usually not designed in such a way that they inherently have an electrically insulated distance from the lateral outer edges of the optoelectronic component. Therefore, due to various safety standards, specified clearance and creepage distances must be taken into account when designing and contacting the optoelectronic component.

An optoelectronic component is provided that is easy to manufacture and/or easy to contact, that can be electrically contacted and/or characterized early in the manufacturing process and/or that is designed to be robust and/or safe.

In various exemplary embodiments, an optoelectronic assembly is provided that is easy to produce and/or easy to contact.

A method for producing an optoelectronic component is provided which is easy to carry out and/or in which the optoelectronic component can be electrically contacted and/or characterized early during the method.

An optoelectronic component is provided. The optoelectronic component has a carrier body. An optoelectronic layer structure is formed over the carrier body. The optoelectronic layer structure has at least one contact region for electrically contacting the optoelectronic layer structure. A cover body is arranged above the optoelectronic layer structure. At least one contact recess extends through the carrier body and the cover body and has an undercut in the contact area. At least part of the contact area is exposed in the undercut. At least one coupling element for electrically contacting the optoelectronic component has a plate-shaped insert element and a holding element for receiving an electrical conductor. The insert element is at least partially arranged in the undercut and electrically coupled to the contact area.

In particular, at least the exposed part of the contact area is free of encapsulation layer. The insert element has direct physical contact with the contact area via the exposed part of the contact area. The contact area can also be completely exposed in the undercut. Alternatively, at least part of the coupling element can penetrate the encapsulation layer arranged above the contact area, for example the contact strip, for example due to its geometric design.

Forming the undercut, arranging the coupling element at least partially in the undercut and electrically coupling the coupling element to the contact area enables electrical contacting and electro-optical characterization of the optoelectronic component via the contact recess and the coupling element while still in the component assembly and thus early during the manufacturing process. Furthermore, the contact areas, which are formed, for example, by contact strips, which can also be referred to as contact sections, are protected from mechanical damage outside the contact recesses by the cover body, as a result of which the optoelectronic component is very robust. Furthermore, legally prescribed standards, such as clearance and creepage distances, for current-carrying layers of the optoelectronic layer structure can easily be ensured. An adhesive, for example a laminating adhesive, for fastening the cover body can be applied flatly to the corresponding substrate, which contributes to easy production of the optoelectronic component. Electrical contacting of the optoelectronic component through the contact recesses can be achieved with only a small amount of construction on the optoelectronic component.

The coupling element can, for example, be designed in one piece or in several pieces. The holding element is used to hold an electrical conductor. The electrical conductor can, for example, be a plug-in element, which can have, for example, a plug or a wire, for example a stripped section of a cable. The undercut is formed by a widening of the contact recess in an axial section of the contact recess. In the area of the widening, a clear width, for example a radius, and/or a distance from inner walls of the contact recess is larger than outside the widening. The fact that the widening or undercut is formed in the contact area can mean, for example, that the contact area is exposed in the undercut or that only a thin layer, for example a part of an encapsulation layer, is formed in the undercut above the contact area. The undercut can therefore be formed close to or directly next to the contact area.

The fact that the insert element is plate-shaped can mean, for example, that the insert element has a radius, a width and/or a length that is many times larger than its thickness. The thickness direction of the insert element is parallel to an axis of the contact recess. The insert element can be circular, for example oval or round, or polygonal, for example square, for example rectangular or square, or hexagonal, in the direction perpendicular to the thickness direction.

Optionally, the coupling element can have a section that is outside the rear cutting runs parallel to a wall of the contact recess. If necessary, this section can be designed according to a dowel, for example an expansion dowel. For example, on its outside, i.e. between the wall of the contact recess and the section itself, the section can have barbs and/or spreading elements which protrude from the section and through which the coupling element is held in the contact recess.

The optoelectronic layer structure has an encapsulation layer and/or an adhesive layer. The contact recess extends through the encapsulation layer and/or through the adhesive layer. The encapsulation layer serves to protect the optically functional, for example organic, layers, for example from moisture. The adhesive layer serves, for example, to fasten the cover body. The adhesive layer can, for example, be applied flatly to the encapsulation layer.

In various embodiments, the insert element is disc-shaped. For example, the insert element is designed according to a washer.

In various embodiments, the insert element is designed with an interference fit in the thickness direction with respect to the undercut. In other words, the insert element is clamped in the undercut between the cover body and the carrier body. The interference fit can contribute to the insert element being pressed into a contact section that has the contact area and/or through a layer formed over the contact area, for example the encapsulation layer and/or the adhesive layer. This can contribute to a particularly good electrical coupling between the insert element and the contact area. Furthermore, this can help to avoid having to remove the corresponding layer formed over the contact area, provided that at least part of the insert element penetrates it due to the pressure on the insert element.

In various embodiments, the insert element has a central recess, at the edge of which the holding element is formed.

In various embodiments, the insert element has contact elements that are in direct physical contact with the contact area. The contact elements can be, for example, teeth, fans, noses, pins, barbs and/or tips. The contact elements can easily contribute to the particularly good electrical coupling between the insert element and the contact area. In various embodiments, the encapsulation layer is at least partially formed between the insert element and the contact area. The contact elements extend through the encapsulation layer, in particular towards the contact area. The contact elements can thus help to avoid having to remove the layer formed over the contact area if it is penetrated by the contact elements due to the pressure on the insert element. This can contribute to a particularly simple and/or cost-effective production of the optoelectronic component.

In various embodiments, the insert element has a toothed washer or a serrated lock washer. The contact elements, for example the teeth or compartments, of the toothed washer or serrated washer can at least partially deform the contact section on which the contact area is formed and penetrate into it. In addition, the contact elements, for example the teeth or compartments, can penetrate the encapsulation layer and/or the adhesive layer above the contact area. This enables particularly good electrical coupling between the insert element and the contact area and/or simple production of the optoelectronic component in a particularly simple manner.

In various embodiments, the insert element has a central recess. The holding element has at least two leaf springs, which are each arranged on the insert element and which extend in the direction away from the insert element so that a space is formed between the two leaf springs. The gap overlaps the recess and becomes narrower in the direction away from the insert element. The leaf springs are suitable for holding an electrical conductor, for example the plug-in element, in particular a wire, whose diameter is larger than the distance between the leaf springs. For example, the wire can push the leaf springs outward, thereby exerting a counterforce from the leaf springs on the wire. This allows a non-positive connection to be formed between the wire and the leaf springs. The holding effect can be further enhanced if the leaf springs are arranged and the wire is inserted in such a way that the wire first penetrates the recess in the insert element and only comes into contact with the leaf springs when it is pushed in further.

In various embodiments, the optoelectronic component has the ability to electrically contact the optoelectronic component an electrically conductive first plug-in element, which is attached to the coupling element by means of the holding element and which is electrically coupled to the contact area via the coupling element. The plug-in element can be, for example, the wire mentioned above. The wire can be, for example, a stripped section, for example an end section, of a cable. Alternatively, the plug-in element can have a plug. The plug can, for example, be designed according to a known plug standard. For example, the plug can be a GU10 pin. Accordingly, the holding element can then form a GU10 base.

In various embodiments, the holding element has a screw thread. For example, the holding element can have an internal thread into which a plug or a connecting piece with a corresponding external thread can be screwed. Alternatively, the holding element can, for example, have an external thread onto which a plug or a connecting piece with a corresponding internal thread can be screwed. This plug element or connecting piece can be designed according to various interfaces for further electrical connection and can take on mechanical holding functions. For example, the screw-in connecting piece can be designed according to a known contact pin shape, for example according to a GU-10 pin. The arrangement of the contact recesses and coupling elements can be based on existing interface geometries, for example on GU-10 sockets.

In various exemplary embodiments, the holding element is formed centrally on the insert element. For example, the holding element is formed centrally on the insert element. The fact that the holding element is formed centrally on the insert element can mean, for example, that the holding element is arranged approximately at the middle of the length, width and/or diameter of the insert element and/or that at least a portion of the holding element is arranged approximately at the middle of the length, the width and / or the diameter. For example, the holding element can be attached to the insertion element off center and can protrude towards the center of the insertion element, for example only in a projection onto the insertion element. The fact that the holding element is formed centrally on the insert element can mean, for example, that the holding element is spaced from an outer edge of the insert element or is arranged in or on a central region of the insert element. The holding element therefore does not have to be arranged exactly in the middle of the insert element, but can also be arranged at a distance from a center of the insert element. The insert element can, for example, have a central recess, at the edge of which the holding element is arranged. Rectangular insert element, length, width, center, round insert element central center point.

In various embodiments, a component arrangement with a first optoelectronic component and at least one second optoelectronic component is provided. Both optoelectronic components can be designed, for example, according to an embodiment of the optoelectronic component explained above. An electrically conductive second plug-in element is coupled to the contact region of the first optoelectronic component via the coupling element of the first optoelectronic component and is electrically coupled to a contact region of the second optoelectronic component via a second coupling element of the second optoelectronic component. The second plug-in element electrically couples the first optoelectronic component to the second optoelectronic component. The second plug-in element thus serves as an electrical connecting element by means of which adjacent and/or directly next to one another optoelectronic components can be electrically and/or mechanically connected to one another. The second plug-in element can, for example, be located in a first end portion of the second plug-in element, which is arranged in the contact recess of the first optoelectronic component, and/or in a second end portion of the second plug-in element, which is arranged in the contact recess of the second optoelectronic component, according to an embodiment of the be formed first plug element. The second plug-in element can, for example, help to quickly and/or easily electrically couple two optoelectronic components to one another, for example to connect them in parallel or in series. The second plug-in element can also be referred to as a connecting element.

Optionally, the second plug element can have a plug body in a middle section which is formed between the two end sections. The middle section can, for example, be embedded in the plug body. The plug body can, for example, have an electrically insulating material and/or plastic. For example, the plug body can be an injection-molded plastic body, with the middle section being a wire that is encapsulated by the plastic. Optionally, the plug body can be designed such that it covers, closes or seals the contact recesses. Furthermore, there can be two th plug element, a further contact element can be arranged for electrically connecting the optoelectronic assembly to an external device.

A method for producing an optoelectronic component is described, in which the carrier body and the cover body are provided. In the carrier body and/or in the cover body, at least one contact recess is formed in such a way that it extends through the carrier body and/or the cover body and that it has the widening in the axial end region of the contact recess. An optoelectronic layer structure, which has at least one contact region for electrically contacting the optoelectronic layer structure, is formed over the carrier body. At least part of the contact area is exposed in the undercut. At least one coupling element has the plate-shaped insert element for electrical coupling to the contact area, which is arranged in the widening of the contact recess. The coupling element further has the holding element for receiving the electrical conductor. The cover body is arranged so that it covers the optoelectronic layer structure, that the widening forms the undercut in the optoelectronic component and that the coupling element is arranged between the cover body and the carrier body.

The cover body can be laminated onto the carrier body with the optoelectronic layer structure. The widening of the contact recess can also be referred to as a recess. After arranging the cover body over the support body, the widening forms a cavity between the cover body and the support body. The cavity forms the undercut. In the area of the undercut, the diameter of the contact recess is larger than outside the undercut.

The insert element can be designed with an interference fit with respect to the undercut in the thickness direction, so that when the cover body is arranged, the coupling element is at least partially pressed against the contact area. The insert element can, for example, be pressed against the encapsulation layer above the contact area in such a way that at least part of it penetrates the encapsulation layer and comes into direct physical contact with the contact area. The insert element can, for example, be pressed against the encapsulation layer above the contact area in such a way that, if necessary, its contact elements penetrate the encapsulation layer. Alternatively or additionally, the insert element can, for example, be pressed against the contact area in such a way that it deforms the contact area and the corresponding contact section.

Embodiments of the invention are shown in the figures and are explained in more detail below.

• 1 eine Schnittdarstellung eines herkömmlichen optoelektronischen Bauelements;
• 2 eine Schnittdarstellung eines Ausführungsbeispiels eines optoelektronischen Bauelements;
• 3 eine detaillierte Schnittdarstellung eines Ausführungsbeispiels eines optoelektronischen Bauelements;
• 4 eine Draufsicht auf ein Ausführungsbeispiel eines optoelektronischen Bauelements;
• 5 eine detailliere Draufsicht auf das optoelektronische Bauelement gemäß 4;
• 6 eine detaillierte Schnittdarstellung des optoelektronischen Bauelements gemäß 3 mit einem Ausführungsbeispiel eines Steckelements;
• 7 eine detaillierte Schnittdarstellung eines Ausführungsbeispiels einer optoelektronischen Baugruppe;
• 8 eine detaillierte Schnittdarstellung eines Ausführungsbeispiels einer optoelektronischen Baugruppe;
• 9 eine detaillierte Schnittdarstellung eines Ausführungsbeispiels eines optoelektronischen Bauelements;
• 10 eine Schnittdarstellung eines Beispiels eines optoelektronischen Bauelements;
• 11 eine Schnittdarstellung eines Beispiels eines optoelektronischen Bauelements;
• 12 eine Seitenansicht eines Ausführungsbeispiels eines Kopplungselements;
• 13 eine Seitenansicht eines Ausführungsbeispiels eines Kopplungselements;
• 14 eine Seitenansicht eines Ausführungsbeispiels eines Kopplungselements;
• 15 ein Ablaufdiagramm eines Verfahrens zum Herstellen eines optoelektronischen Bauelementes;
• 16 eine detaillierte Schnittdarstellung eines Ausführungsbeispiels einer Schichtenstruktur eines optoelektronischen Bauelementes.

Show it:

• 1 a sectional view of a conventional optoelectronic component;
• 2 a sectional view of an exemplary embodiment of an optoelectronic component;
• 3 a detailed sectional view of an exemplary embodiment of an optoelectronic component;
• 4 a top view of an exemplary embodiment of an optoelectronic component;
• 5 a detailed top view of the optoelectronic component according to 4 ;
• 6 a detailed sectional view of the optoelectronic component according to 3 with an embodiment of a plug-in element;
• 7 a detailed sectional view of an exemplary embodiment of an optoelectronic assembly;
• 8th a detailed sectional view of an exemplary embodiment of an optoelectronic assembly;
• 9 a detailed sectional view of an exemplary embodiment of an optoelectronic component;
• 10 a sectional view of an example of an optoelectronic component;
• 11 a sectional view of an example of an optoelectronic component;
• 12 a side view of an exemplary embodiment of a coupling element;
• 13 a side view of an exemplary embodiment of a coupling element;
• 14 a side view of an exemplary embodiment of a coupling element;
• 15 a flowchart of a method for producing an optoelectronic component;
• 16 a detailed sectional view of an exemplary embodiment of a layer structure of an optoelectronic component.

In the following detailed description, reference is made to the accompanying drawings, which form a part of this description and in which are shown, by way of illustration, specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "back", etc. is used with reference to the orientation of the figure(s) being described. Because components of embodiments may be positioned in a number of different orientations, the directional terminology is for illustrative purposes and is not in any way limiting. It is to be understood that the features of the various embodiments described herein may be combined with one another unless specifically stated otherwise. The scope of the present invention is defined by the appended claims.

In the context of this description, the terms “connected”, “connected” and “coupled” are used to describe both a direct and an indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are given identical reference numerals where appropriate.

The connection of a first body to a second body can be positive, non-positive and/or materially bonded. The connections can be designed to be detachable, i.e. reversible. In various embodiments, a reversible, locking connection can be realized, for example, as a screw connection, a Velcro fastener, a clamp, a snap connection and/or by using clips. However, the connections can also be designed to be non-detachable, i.e. irreversible. A non-detachable connection can only be separated by destroying the connecting means. In various embodiments, an irreversible, coherent connection can be realized, for example, as a rivet connection, an adhesive connection or a solder connection.

In the case of a positive connection, the movement of the first body can be restricted by a surface of the second body, with the first body moving perpendicularly, i.e. normally, in the direction of the restricting surface of the second body. In other words, with a positive connection, a relative movement of the two bodies is prevented in at least one direction due to their corresponding shapes. A hook in an eyelet can, for example, be restricted in movement in at least one spatial direction. In various embodiments, a positive connection can be realized, for example, as a screw connection, a Velcro fastener, a clamp, a snap connection and/or by means of clamps.

In the case of a non-positive connection, due to physical contact between the two bodies under pressure, static friction can limit movement of the first body parallel to the second body. An example of a non-positive connection can be, for example, a bottle cork in a bottle neck or a dowel with an interference fit in a corresponding dowel hole. The frictional connection can also be referred to as a press fit.

In the case of a cohesive connection, the first body can be connected to the second body by means of atomic and/or molecular forces. Cohesive connections can often be non-detachable connections. In various embodiments, a cohesive connection can be realized, for example, as an adhesive connection, a solder connection, for example a glass solder or a metal solder, or as a welded connection.

The term “translucent” or “translucent layer” can be understood in various exemplary embodiments to mean that a layer is permeable to electromagnetic radiation, for example to the radiation emitted by a component emitting electromagnetic radiation, for example one or more wavelength ranges, for example to light in a wavelength range of visible light (for example at least in a portion of the wavelength range from 380 nm to 780 nm). For example, the term “translucent layer” in various exemplary embodiments means that essentially the entire amount of radiation coupled into a structure (e.g. a layer) is also coupled out of the structure (e.g. layer), whereby part of the light can be scattered .

An optoelectronic assembly can have one, two or more optoelectronic components. The optoelectronic components of an optoelectronic assembly can, for example, be electrically and/or physically coupled to one another. In various exemplary embodiments, an optoelectronic component can be an organic optoelectronic component, i.e. have at least one organic optically functional layer. In various exemplary embodiments, an optoelectronic component can be an electromagnetic radiation-emitting component or an electromagnetic radiation-absorbing component. An electromagnet A typical radiation-absorbing component can be, for example, a solar cell. In various exemplary embodiments, an electromagnetic radiation-emitting component can be a semiconductor component that emits electromagnetic radiation and/or can be designed as a diode that emits electromagnetic radiation, as a diode that emits organic electromagnetic radiation, as a transistor that emits electromagnetic radiation, or as a transistor that emits organic electromagnetic radiation be. The radiation can be, for example, light in the visible range, UV light and/or infrared light. In this context, the electromagnetic radiation-emitting component can be designed, for example, as a light-emitting diode (LED), as an organic light-emitting diode (OLED), as a light-emitting transistor or as an organic light-emitting transistor. In various exemplary embodiments, the light-emitting component can be part of an integrated circuit. Furthermore, a plurality of light-emitting components can be provided, for example accommodated in a common housing.

1 shows a conventional optoelectronic component 1. The conventional optoelectronic component 1 has a carrier 12, for example a substrate. An optoelectronic layer structure is formed on the carrier 12. The carrier 12 can be translucent or transparent.

The optoelectronic layer structure has a first electrode layer 14, which has a first contact section 16, a second contact section 18 and a first electrode 20. The first contact section 16 can also be referred to as a first contact strip and the second contact section 18 can also be referred to as a second contact strip. The second contact section 18 is electrically coupled to the first electrode 20 of the optoelectronic layer structure. The first electrode 20 is electrically insulated from the first contact section 16 by means of an electrical insulation barrier 21. An optically functional layer structure 22, for example an organic functional layer structure, of the optoelectronic layer structure is formed above the first electrode 20. The optically functional layer structure 22 can, for example, have one, two or more sub-layers, as described below with reference to 15 explained in more detail. A second electrode 23 of the optoelectronic layer structure is formed above the organically functional layer structure 22 and is electrically coupled to the first contact section 16. The first electrode 20 serves, for example, as an anode or cathode of the optoelectronic layer structure. The second electrode 23 serves, corresponding to the first electrode, as a cathode or anode of the optoelectronic layer structure.

An encapsulation layer 24 of the optoelectronic layer structure is formed over the second electrode 23 and partially over the first contact section 16 and partially over the second contact section 18, which encapsulates the optoelectronic layer structure. In the encapsulation layer 24, a first recess of the encapsulation layer 24 is formed above the first contact section 16 and a second recess of the encapsulation layer 24 is formed above the second contact section 18. A first contact area 32 is exposed in the first recess of the encapsulation layer 24 and a second contact area 34 is exposed in the second recess of the encapsulation layer 24. The first contact area 32 serves to electrically contact the first contact section 16 and the second contact area 34 serves to electrically contact the second contact section 18.

An adhesive layer 36 is formed over the encapsulation layer 24. The adhesive layer 36 has, for example, an adhesive, for example an adhesive, for example a laminating adhesive, a varnish and/or a resin. A cover body 38 is formed over the adhesive layer 36. The adhesive layer 36 serves to attach the cover body 38 to the encapsulation layer 24. The cover body 38 has, for example, glass, metal and/or graphite. For example, the cover body 38 can be formed essentially from glass and have a thin metal layer, for example a metal foil, and/or a graphite layer, for example a graphite laminate, on the glass body. If necessary, a protective layer can be formed over the graphite layer to protect the graphite layer. The cover body 38 serves to protect the conventional optoelectronic component 1, for example from external mechanical forces. Furthermore, the cover body 38 can serve to distribute and/or dissipate heat that is generated in the conventional optoelectronic component 1. For example, the glass of the cover body 38 can serve as protection against external influences and the metal layer of the cover body 38 can serve to distribute and/or dissipate the heat generated during operation of the conventional optoelectronic component 1.

The adhesive layer 36 can, for example, be applied to the encapsulation layer 24 in a structured manner. That the adhesive layer 36 is applied to the encapsulation layer 24 in a structured manner can mean, for example, that the adhesive layer 36 has a predetermined structure immediately upon application. For example, the adhesive layer 36 can be applied in a structured manner using a dispensing or printing process.

The conventional optoelectronic component 1 is sensitive to external influences in the first contact area 32 and the second contact area 34, since no cover body 38 is provided in these contact areas 32, 34.

The conventional optoelectronic component 1 can, for example, be isolated from a component composite by moving the carrier 12 along its in 1 The outer edges shown on the side are scratched and then broken and the cover body 38 is equally along its in 1 the outer edges shown are scratched and then broken. During this cracking and breaking, the encapsulation layer 24 is exposed over the contact areas 32, 34. Subsequently, the first contact area 32 and the second contact area 34 can be exposed in a further method step, for example by means of an ablation process, for example by means of laser ablation, mechanical scratching or an etching process.

2 shows a sectional view of an exemplary embodiment of an optoelectronic component 10. The optoelectronic component 10 can, for example, largely correspond to the conventional optoelectronic component 1 explained above. In contrast, however, the in 2 shown embodiment of the optoelectronic component 10 has an adhesive layer 36 and a cover body 38, which extends up to the in 2 shown lateral outer edges of the carrier body 12 extend.

The optoelectronic component 10 has a first contact recess 42 and a second contact recess 44, which extend through the optoelectronic component 10. The contact recesses 42, 44 each have a widened area or a widening in which a clear dimension of the contact recesses 42, 44 is larger than outside the widenings. An undercut 48 is formed from the widenings in the contact recesses 42, 44. The undercuts 48 extend in the axial direction over a part of the cover body 38 facing the carrier body 12, through the adhesive layer 36 and through the encapsulation layer 24. If the undercut 48 does not extend through the encapsulation layer 24 and/or the adhesive layer 36, it can first contact area 32 and the second contact area 34 in the corresponding undercuts 48 may be covered by the encapsulation layer 24 and the adhesive layer 36, respectively. In the latter case, the undercuts 48 are formed close to the contact areas 32, 34, for example above the encapsulation layer 24 or the adhesive layer 36. With respect to their cross section perpendicular to an elongated axis of the contact recesses 42, 44, the contact recesses 42, 44 can be designed, for example, rectangular, for example square and/or any polygon and/or round, for example oval or circular. The contact recesses 42, 44 in the carrier body 12 can be formed, for example, by means of laser drilling, mechanical drilling or wet chemical etching.

Optionally, the cover body 38 can be formed essentially or completely from metal. Alternatively, the cover body 38 can also be designed as explained above.

When separated from the component assembly, the optoelectronic component 10 can simply be cut and/or sawn along the common, flush lateral outer edges of the cover body 38 and the carrier body 12. Alternatively, the outer edges of the cover body 38 and the carrier body 12 may not be designed flush with one another and may be cut and/or sawn independently of one another.

This in 2 The exemplary embodiment shown of the optoelectronic component 10 is designed to be particularly robust, in particular against external mechanical influences, since both the cover body 38 and the adhesive layer 36 extend to the outer edge of the carrier body 12 and thus also the optoelectronic component 10 in the contact areas 32, 34 is stable.

3 shows a detailed sectional view of the optoelectronic component 10 according to 2 with a coupling element 50. The coupling element 50 is arranged in one of the contact recesses 42, 44, for example in the second contact recess 44. The coupling element 50 is used to electrically contact the optoelectronic component 10. The coupling element 50 has an insert element 52 and a holding element 54.

The insert element 52 is plate-shaped and can be rounded in plan view, for example oval or circular, or polygonal, for example square or hexagonal. The insert element 52 is in the Undercut 48 arranged. The insert element 52 is in direct physical contact with the second contact area 34. For example, no encapsulation layer 24 is formed between the insert element 52 and the second contact area 34. Alternatively, the encapsulation layer 24 is formed between the insert element 52 and the second contact region 34 and at least part of the insert element 52 extends through the encapsulation layer 24 up to the second contact region 34. For example, the insert element 52 has contact elements 53 which, for example, have tips , compartments, teeth or pins and which extend through the encapsulation layer 24. The insert element 52 can be designed, for example, as a washer, serrated lock washer or as a toothed washer.

The insert element 52 can be designed with an interference fit with respect to the undercut 48 in the thickness direction, which is parallel to the axis of the second contact recess 44. This means that a height of the undercut 48 in the direction parallel to the axis of the second contact recess 44 is slightly smaller than a maximum thickness of the insert element 52 in the area of the undercut 48. This causes the insert element 52 in the direction towards the second contact area 34 is pressed. This can contribute to a particularly good and/or secure electrical coupling between the insert element 52 and the second contact area 34. Alternatively or additionally, this can contribute to at least part of the insert element 52 penetrating the encapsulation layer 24 up to the second contact area 34.

The holding element 54 is arranged on the insert element 52, for example attached, or is formed in one piece with the insert element 52. The holding element 54 is used to accommodate and hold an electrical conductor, for example a plug-in element 60 (see 6 ), for electrically contacting the optoelectronic component 10. For example, a non-positive and/or positive connection to the plug-in element 60 can be established by means of the holding element 54. The holding element 54 has two leaf springs 56. Alternatively, the holding element 54 can also have three, four or more leaf springs 56. The leaf springs 56 extend from the insert element 52 in the direction away from the insert element 52. A gap is formed between the leaf springs 56, which tapers and becomes smaller in the direction away from the insert element 52.

The coupling element 50, in particular the insert element 52 and the holding element 54 are designed to be electrically conductive. For example, the coupling element 50 is formed by or at least has an electrically conductive material. For example, the coupling element 50 has a metal, for example copper, silver and/or gold.

A contact means (not shown) can be arranged in the undercut 48. The contact means can, for example, have or be a conductive liquid, for example an alloy, a conductive adhesive or a conductive paste. The contact agent can remain permanently liquid, or at least partially remain liquid and partially harden or dry, or completely harden or dry. The contact means can be designed such that the partial or complete curing or drying is completed during the process for producing the optoelectronic component 10, during a subsequent storage period of the optoelectronic component 10 or subsequently during normal operation of the optoelectronic component 10. The hardened or dried contact means can firmly connect the coupling element 50 to the second contact region 34 and thus firmly to the contact sections 16, 18, for example in a materially bonded manner. If the contact medium is liquid, the contact recesses 32, 34 can be sealed tightly, for example by means of the plug-in elements 60, 65.

If a liquid alloy, for example a first alloy, is used as the contact means, the first alloy can enter into a chemical reaction with the metallic materials of the coupling element 50 and the second contact area 34 and form a second alloy, which changes into a solid state and the coupling element 50 and the second contact area 34 are not only electrically coupled but also firmly connected to one another, for example in a cohesive manner. For this purpose, the first alloy can have a melting point that is lower than the melting point of the second alloy. The low melting point of the first alloy is, for example, below a temperature above which materials of the optically functional layer structure 22, for example organic layers, are damaged. This enables a particularly gentle production of the optoelectronic component 10, which in turn allows the service life and storage stability to be increased. In particular, the melting temperature of the first alloy can be selected so that the first alloy is liquid under all operating and storage conditions, and the melting temperature of the second alloy can be selected so that the second alloy is solid under all operating and storage conditions. The coupling of the coupling element 50 to the second contact area 34 using the liquid sigen first alloy can take place at a temperature at which the first alloy is liquid and the second alloy is not liquid. For example, the first alloy may be liquid at room temperature. This makes it possible to produce the optoelectronic component 10 particularly cheaply and easily. In particular, when using the first alloy, no temperature control of the components of the optoelectronic component 10 is necessary. In particular, processing under ambient air in a clean room is possible. Upon contact with the metallic materials of the second contact region 34 and the coupling element 50, the second alloy can then be formed from the metals of the first alloy and the metallic materials of the coupling element 50 and the second contact section 18. Due to the current temperature, this changes to its solid state and solidifies. The first alloy can react completely or only partially to form the second alloy. The coupling element 50 and the second contact area 34, for example the second contact section 18, which has the second contact area 34, are connected to one another.

The first alloy can contain, for example, gallium, indium, tin, copper, molybdenum, silver and/or bismuth. For example, the first alloy may comprise GaInSn or InBiSn. The first and/or second metallic material may include, for example, aluminum, zinc, chromium, copper, molybdenum, silver, gold, nickel, gallium, indium and/or tin. Accordingly, the second alloy or the further alloy can contain, for example, aluminum, tin, magnesium, silver, copper, silver, gold, molybdenum or zinc.

4 shows a top view of an exemplary embodiment of an optoelectronic component 10, which can, for example, largely correspond to one of the optoelectronic components 10 explained above. The optoelectronic component 10 has two first contact recesses 42 and two second contact recesses 44. Alternatively, the optoelectronic component 10 can also have more or fewer contact recesses 42, 44. In this exemplary embodiment, the cover body 38 is designed to be transparent, so that the contact sections 16, 18, the optically functional layer structure 22 and the coupling elements 50 in the contact recesses 42, 44 can be seen through the cover body 38.

5 shows a detailed top view of the optoelectronic component 10 according to 4 . The insert element 52 is designed as a serrated washer. The holding element 54 has four leaf springs 56.

6 shows a detailed sectional view of the optoelectronic component 10 according to 3 . A plug-in element 60 is electrically coupled to the second contact area 34 via the coupling element 50. The plug-in element 60 has a cable that has a non-insulated, for example stripped, wire and/or first end section 64 and a section insulated with a sheath 62. The jacket 62 can, for example, be designed to be electrically insulating. For example, the jacket 62 is formed from an electrically insulating material, for example a plastic. The first end section 64 has an external dimension that is larger than the smallest clear dimension between the leaf springs 56. This causes the first end section 64 to bend the leaf springs 56 outwards and the leaf springs 56 in response to this, the first end section 64 and thus the Hold plug element 60. The first end section 64 is in direct physical contact with the coupling element 50. The plug-in element 60 is electrically coupled to the coupling element 50 via the physical contact between the first end section 64 and the plug-in element 60. To couple the plug-in element 60 with the coupling element 50, the plug-in element 60 can simply be inserted 6 are inserted from top to bottom into the second contact recess 44 and the coupling element 50, in particular in such a way that the first end section 64 first passes the insert element 52 and then comes into contact with the holding element 54 and is held by it.

7 shows a detailed side view of an exemplary embodiment of an optoelectronic assembly, which is one of the optoelectronic components 10 explained above, which can also be referred to as a first optoelectronic component 10, and a second optoelectronic component 70, which is formed according to an embodiment of the optoelectronic components 10 explained above can be, on. The second contact recess 44 of the first optoelectronic component 10 and the first contact recess 42 of the second optoelectronic component 70 face each other and are electrically coupled to one another via a second plug-in element 65. The second plug-in element 65 has a non-insulated second end section 67 and a non-insulated third end section 69. The second end section 67 is held by the holding element 54 of the coupling element 50 of the first optoelectronic component 10 and is electrically coupled to the first optoelectronic component 10 via the coupling element 50 of the first optoelectronic component 10. The third end section 69 is held by the holding element 54 of the coupling element 50 of the second optoelectronic component 70 and is connected via the coupling element 50 of the second optoelectronic component 70 is electrically coupled to the second optoelectronic component 70.

Between the second and third end sections 67, 69, the second plug element 65 has a middle section which is embedded in a plug body 71. The plug body 71 can, for example, be formed by or have an electrically insulating material. The second plug body 71 can have plastic, for example. The second plug body 71 can be manufactured, for example, using an injection molding or compression molding process. Optionally, the plug body 71 can be designed such that it closes the contact recesses 42, 44 on one side, for example tightly, for example liquid-tight and/or gas-tight. Alternatively or additionally, a contact element for external coupling of the optoelectronic components 10, 70 can be arranged on the plug body 71, for example for supplying the optoelectronic components 10, 70 with energy and/or for controlling or regulating the optoelectronic components 10, 70.

The second plug-in element 65 can, for example, help ensure that the two optoelectronic components 10, 70 can be easily connected in series or in parallel.

8th shows a further detailed side view of the optoelectronic assembly according to 7 . The first contact recess 42 of the second optoelectronic component 70 is closed by means of a cover 66, for example tightly, for example liquid-tight and/or gas-tight. The second contact recess 44 of the first optoelectronic component 10 can be closed by means of a further cover 66, for example tightly, for example liquid-tight and/or gas-tight, by inserting it at least partially into the second contact recess 44 of the first optoelectronic component 10 in a first direction 68.

9 shows a detailed sectional view of the optoelectronic component 10 according to 3 . The holding element 54 of the coupling element 50 has an internal thread. The first plug-in element 60 has an external thread corresponding to the internal thread. The first plug element 60 can be screwed into the holding element 54 in a direction of rotation 72 and is electrically coupled to the second contact area 34 via the coupling element 50, in particular via the holding element 54 and the insert element 52. The holding element 54 with the internal thread enables a non-positive and/or positive connection of the coupling element 50 to one of the plug-in elements 60, 65.

Alternatively or additionally, the first plug-in element 60 has a wall 73 which extends in the axial direction in the second contact recess 44 and on the inside of which the internal thread is formed. On the outside, the wall 73 has barbs 75. The wall 73 with the barbs 75 can be designed, for example, according to a dowel, in particular according to an expansion dowel.

Alternatively or additionally, the first plug-in element 60 can have an interface geometry 74. The interface geometry 74 can be used, for example, to connect a wire, a cable and/or a plug. The interface geometry 74 can be used, for example, to form a soldered, clamped or screwed connection. The interface geometry 74 can be designed, for example, according to a socket or a socket, for example a GU-10 socket.

10 shows a sectional view of an example of an optoelectronic component 10, which can, for example, largely correspond to one of the optoelectronic components 10 explained above. For reasons of simple illustration, the coupling element 50 is not shown. In the optoelectronic component 10, the contact recesses 42, 44 extend exclusively through the cover body 38, the adhesive layer 36 and the encapsulation layer 24.

Alternatively, the contact recesses 42, 44 may not or only partially extend through the encapsulation layer 24. In the latter case, the coupling element 50 can be designed and arranged such that at least part of the coupling element 50, for example the contact elements 53, penetrates the encapsulation layer 24 up to the contact areas 32, 34.

11 shows a sectional view of an example of an optoelectronic component 10, which can, for example, largely correspond to one of the optoelectronic components 10 explained above. For reasons of simple illustration, the coupling element 50 is not shown. In the optoelectronic component 10, the contact recesses 42, 44 extend exclusively through the carrier body 12 and, if necessary, through a barrier layer on the carrier body 12.

12 shows a side view of an exemplary embodiment of a coupling element 50, which for example, can largely correspond to one of the coupling elements 50 explained above. The mutually inclined leaf springs 56 enable a non-positive connection of the coupling element 50 to one of the plug-in elements 60, 65. For example, in 12 One of the plug-in elements 60, 65 can be inserted from above into the central recess of the coupling element 50. When the corresponding plug-in element 60, 65 is inserted further, it comes into contact with the leaf springs 56 and pushes them apart, which causes a force to hold and/or clamp the corresponding plug-in element 60, 65. This creates a non-positive connection between the corresponding plug-in element 60, 65 and the coupling element 50. If the corresponding plug-in element 60, 65 is withdrawn, the leaf springs 56 can tilt with the plug-in element 60, 65, whereby a type of barb function is realized. For example, a positive connection can be formed between the corresponding plug-in element 60, 65 and the coupling element 50.

13 shows a side view of an exemplary embodiment of a coupling element 50, which can, for example, largely correspond to one of the coupling elements 50 explained above. The leaf springs 56 are designed in the shape of a ring segment. In particular, the leaf springs 56 are designed so that the first plug-in element 60 can be pushed in from both sides, i.e. in 13 from above or from below, can be inserted into the coupling element 50 and held by it. This makes it possible, for example, to use the coupling element 50 in an optoelectronic component 10 in which the contact recesses 42, 44 do not extend through the entire optoelectronic component 10, such as in an optoelectronic component 10 as with reference to 10 or 11 explained.

The clear dimension of the gap, in other words the distance, between the two leaf springs 56 is smaller at its narrowest point than an external dimension, for example an external radius, of the first plug-in element 60 at its end section 64. In other words, the smallest distance is between the leaf springs 56 smaller than the external dimension of the first plug-in element 60 in the contact area. This causes the leaf springs 56 to bend apart as a result of the insertion of the first plug-in element 60. The counterforce thereby exerted by the leaf springs 56 on the first plug-in element 60 holds the first plug-in element 60. The mutually inclined and bent leaf springs 56 thus enable a non-positive connection of the coupling element 50 one of the plug-in elements 60, 65, in particular from both sides.

14 shows a side view of an exemplary embodiment of a coupling element 50, which can, for example, largely correspond to one of the coupling elements 50 explained above. The holding element 54 has an external thread. The first plug-in element 60 can have a threaded body, not shown, with a corresponding internal thread. The first plug-in element 60 can be screwed onto the coupling element 50 via the holding element 54 and can be electrically coupled to one of the contact areas 32, 34 via the coupling element 50. Alternatively, the holding element 54 can be used accordingly 9 be designed as an internal thread. The holding element 54 with the external thread enables a non-positive and/or positive connection of the coupling element 50 to one of the plug-in elements 60, 65.

The coupling element 50 can be used in an optoelectronic component 10 in which the contact recesses 42, 44 do not extend through the entire optoelectronic component 10, such as in an optoelectronic component 10 as with reference to 10 or 11 explained.

15 shows a flowchart of a method for producing an optoelectronic component 10, for example one of the optoelectronic components 10 explained above.

In a step S2, the carrier body 12 is provided.

In a step S4, the optoelectronic layer structure is formed, in particular the first electrode 14, the optically functional layer structure 22, the second electrode 23 and the encapsulation layer 24.

In a step S6, the contact recesses 42, 44 and the widenings, from which the undercuts 48 are subsequently formed, are formed in the cover body 38, the adhesive layer 36, the encapsulation layer 24 and/or the carrier body 12. The contact recesses 42, 44 and/or the widenings in the cover body 38, the adhesive layer 36, the encapsulation layer 24 or the carrier body 12 can be worked out in one or more sub-steps of step S6. The contact recesses 42, 44 and/or the widenings can be formed, for example, by means of laser drilling, mechanical drilling or by means of an etching process, for example a physical and/or chemical etching process.

In a step S8, the coupling element(s) 50 are arranged in the contact recesses 42, 44, in particular completely or partially in their widenings.

In a step S10, the cover body 38 is arranged over the layer structure, for example over the encapsulation layer 24, for example by means of an adhesive layer 36, in such a way that, if necessary, the contact recesses 42, 44 overlap the contact areas 32, 44 and the widenings form the undercuts 48. Furthermore, pressure can be exerted on the insert elements 52 of the coupling elements 50 by means of the cover body 38, for example so that the contact elements 53 of the insert elements 52 are pressed through the adhesive layer 36 and/or the encapsulation layer 24.

In a step S12, the first and/or second plug-in elements 60, 65 are inserted into the contact recesses 42, 44 and mechanically and/or electrically coupled to the corresponding coupling elements 50.

16 shows a detailed sectional view of a layer structure of an exemplary embodiment of an optoelectronic component, for example the optoelectronic component 10 explained above, the coupling elements 50 and the contact areas 32, 34 not being shown in this detailed view. The optoelectronic component 10 can be designed as a top emitter and/or bottom emitter. If the optoelectronic component 10 is designed as a top emitter and bottom emitter, the optoelectronic component 10 can be referred to as an optically transparent component, for example a transparent organic light-emitting diode.

The optoelectronic component 10 has the carrier 12 and an active region above the carrier 12. A first barrier layer (not shown), for example a first barrier thin layer, can be formed between the carrier 12 and the active region. The active region has the first electrode 20, the organic functional layer structure 22 and the second electrode 23. The encapsulation layer 24 is formed over the active area. The encapsulation layer 24 can be formed as a second barrier layer, for example as a second barrier thin layer. The cover 38 is arranged above the active area and optionally above the encapsulation layer 24. The cover 38 can be arranged on the encapsulation layer 24, for example by means of an adhesive layer 36.

The active area is an electrically and/or optically active area. The active region is, for example, the region of the optoelectronic component 10 in which electrical current flows for operating the optoelectronic component 10 and/or in which electromagnetic radiation is generated or absorbed.

The organic functional layer structure 22 may have one, two or more functional layer structure units and one, two or more intermediate layers between the layer structure units.

The carrier 12 can be translucent or transparent. The carrier 12 serves as a carrier element for electronic elements or layers, for example light-emitting elements. The carrier 12 may include, for example, or be formed from glass, quartz, and/or a semiconductor material or any other suitable material. Furthermore, the carrier 12 can have or be formed from a plastic film or a laminate with one or more plastic films. The plastic can have one or more polyolefins. Furthermore, the plastic can have polyvinyl chloride (PVC), polystyrene (PS), polyester and/or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and/or polyethylene naphthalate (PEN). The carrier 12 may comprise or be formed from a metal, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel. The carrier 12 can be designed as a metal foil or metal-coated foil. The carrier 12 can be part of or form a mirror structure. The carrier 12 can have a mechanically rigid area and/or a mechanically flexible area or can be designed in such a way.

The first electrode 20 can be designed as an anode or as a cathode. The first electrode 20 can be translucent or transparent. The first electrode 20 comprises an electrically conductive material, for example metal and/or a conductive transparent oxide (transparent conductive oxide, TCO) or a layer stack of several layers comprising metal or TCOs. The first electrode 20 may, for example, have a layer stack of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers. The metal that can be used is, for example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these materials. Transparent conductive oxides are transparent, conductive materials, for example metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal Oxygen compounds, such as ZnO, SnO2, or In2O3, ternary metal oxygen compounds, such as AlZnO, Zn2SnO4, CdSnO3, ZnSnO3, MgIn2O4, GaInO3, Zn2In2O5 or In4Sn3O12 or mixtures of different transparent conductive oxides also belong to the group of TCOs.

The first electrode 20 can alternatively or in addition to the materials mentioned have: networks of metallic nanowires and particles, for example made of Ag, networks of carbon nanotubes, graphene particles and layers and/or networks of semiconducting nanowires. Alternatively or additionally, the first electrode 20 may have or be formed from one of the following structures: a network of metallic nanowires, for example made of Ag, which are combined with conductive polymers, a network of carbon nanotubes which are combined with conductive polymers and / or graphene layers and composites. Furthermore, the first electrode 20 may comprise electrically conductive polymers or transition metal oxides.

The first electrode 20 can, for example, have a layer thickness in a range from 10 nm to 500 nm, for example from less than 25 nm to 250 nm, for example from 50 nm to 100 nm.

The first electrode 20 can have a first electrical connection to which a first electrical potential can be applied. The first electrical potential can be provided by an energy source (not shown), for example a current source or a voltage source. Alternatively, the first electrical potential can be applied to the carrier 12 and supplied indirectly to the first electrode 20 via the carrier 12. The first electrical potential can be, for example, the ground potential or another predetermined reference potential.

The optically functional layer structure 22 may be an organic functional layer structure and/or have a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer and/or an electron injection layer.

The hole injection layer may be formed on or above the first electrode 20. The hole injection layer may include or be formed from one or more of the following materials: HAT-CN, Cu(I)pFBz, MoOx, WOx, VOx, ReOx, F4-TCNQ, NDP-2, NDP-9, Bi(III)pFBz , F16CuPc; NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine); beta-NPB N,N'-Bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidine); TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)benzidine); Spiro TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)benzidine); Spiro-NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-spiro); DMFL-TPD N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethylfluorene); DMFL-NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-dimethyl-fluorene); DPFL-TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); DPFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); Spiro-TAD (2,2',7,7'-tetrakis(n,n-diphenylamino)-9,9'-spirobifluorene); 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene; 9,9-Bis[4-(N,N-bis-naphthalen-2-yl-amino)phenyl]-9H-fluorene; 9,9-Bis[4-(N,N'-bis-naphthalen-2-yl-N,N'-bis-phenyl-amino)-phenyl]-9H-fluor; N,N'bis(phenanthren-9-yl)-N,N'-bis(phenyl)benzidine; 2,7 Bis[N,N-bis(9,9-spiro-bifluorene-2-yl)-amino]-9,9-spiro-bifluorene; 2,2'-Bis[N,N-bis(biphenyl-4-yl)amino]9,9-spiro-bifluorene; 2,2'-Bis(N,N-di-phenyl-amino)9,9-spiro-bifluorene; Di-[4-(N,N-ditolyl-amino)phenyl]cyclohexane; 2,2',7,7' tetra(N,N-di-tolyl)amino-spiro-bifluorene; and/or N, N,N',N'-tetra-naphthalen-2-yl-benzidine.

The hole injection layer may have a layer thickness in a range from about 10 nm to about 1000 nm, for example in a range from about 30 nm to about 300 nm, for example in a range from about 50 nm to about 200 nm.

The hole transport layer can be formed on or above the hole injection layer. The hole transport layer may include or be formed from one or more of the following materials: NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine); beta-NPB N,N'-Bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidine); TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)benzidine); Spiro TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)benzidine); Spiro-NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-spiro); DMFL-TPD N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethylfluorene); DMFL-NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-dimethyl-fluorene); DPFL-TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); DPFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); Spiro-TAD (2,2',7,7'-tetrakis(n,n-diphenylamino)-9,9'-spirobifluorene); 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene; 9,9-Bis[4-(N,N-bis-naphthalen-2-yl-amino)phenyl]-9H-fluorene; 9,9-Bis[4-(N,N'-bis-naphthalen-2-yl-N,N'-bis-phenyl-amino)-phenyl]-9H-fluor; N,N'bis(phenanthren-9-yl)-N,N'-bis(phenyl)benzidine; 2,7-Bis[N,N-bis(9,9-spiro-bifluorene-2-yl)-amino]-9,9-spiro-bifluorene; 2,2'-Bis[N,N-bis(biphenyl-4-yl)amino]9,9-spiro-bifluorene; 2,2'-Bis(N,N-di-phenyl-amino)9,9-spiro-bifluorene; Di-[4-(N,N-ditolyl-amino)phenyl]cyclohexane; 2,2',7,7'-tetra(N,N-di-tolyl)amino-spiro-bifluorene; and N, N,N',N' tetra-naphthalen-2-yl-benzidine.

The hole transport layer may have a layer thickness in a range from approximately 5 nm to approximately 50 nm, for example in a range from approximately 10 nm to approximately 30 nm, for example approximately 20 nm.

The one or more emitter layers can be formed on or above the hole transport layer, for example with fluorescent and/or phosphorescent emitters. The emitter layer can have organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules (“small molecules”) or a combination of these materials. The emitter layer may comprise or be formed from one or more of the following materials: organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (e.g. 2- or 2,5-substituted poly-p-phenylene vinylene) and metal complexes, for example iridium Complexes such as blue phosphorescent FIrPic (bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium III), green phosphorescent Ir(ppy)3 (tris(2-phenylpyridine)iridium III) , red phosphorescent Ru (dtb-bpy)3*2(PF6) (tris[4,4-di-tert-butyl-(2,2)-bipyridine]ruthenium(III) complex) and blue fluorescent DPAVBi (4,4 -Bis[4-(di-p-tolylamino)styryl]biphenyl), green fluorescent TTPA (9,10-bis[N,N-di-(p-tolyl)-amino]anthracene) and red fluorescent DCM2 (4- Dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4H-pyran) as non-polymeric emitters. Such non-polymer emitters can be deposited, for example, by means of thermal evaporation. Furthermore, polymer emitters can be used which can be deposited, for example, using a wet chemical process, such as a spin coating process (also referred to as spin coating). The emitter materials can be suitably embedded in a matrix material, for example an technical ceramic or a polymer, for example an epoxy, or a silicone.

The first emitter layer may have a layer thickness in a range from approximately 5 nm to approximately 50 nm, for example in a range from approximately 10 nm to approximately 30 nm, for example approximately 20 nm.

The emitter layer can have emitter materials that emit in one color or in different colors (for example blue and yellow or blue, green and red). Alternatively, the emitter layer can have several sub-layers that emit light of different colors. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits a secondary radiation of a different wavelength, so that a (not yet white) primary radiation is obtained through the combination of primary radiation and secondary Radiation gives a white color impression.

The electron transport layer can be formed, for example deposited, on or above the emitter layer. The electron transport layer may include or be formed from one or more of the following materials: NET-18; 2,2',2" -(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole); 2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1 ,3,4-oxadiazole,2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 8-hydroxyquinolinolato-lithium, 4-(naphthalen-1-yl)-3,5-diphenyl- 4H-1,2,4-triazole; 1,3-bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]benzene; 4,7-diphenyl -1,10-phenanthroline (BPhen); 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole; Bis(2-methyl-8-quinolinolate)-4-( phenylphenolato)aluminum; 6,6'-bis[5-(biphenyl-4-yl)-1,3,4-oxadiazo-2-yl]-2,2'-bipyridyl; 2-phenyl-9,10-di (naphthalen-2-yl)-anthracene; 2,7-bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]-9,9-dimethylfluorene; 1,3-Bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene; 2-(naphthalen-2-yl)-4,7-diphenyl-1,10- phenanthroline; 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane; 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[4,5-f][1,10]phenanthroline; phenyl-dipyrenylphosphine oxide; Naphthalinetetracarboxylic acid dianhydride or its imides; Perylenetetracarboxylic acid dianhydride or its imides; and materials based on silos with a silacyclopentadiene unit.

The electron transport layer may have a layer thickness in a range from approximately 5 nm to approximately 50 nm, for example in a range from approximately 10 nm to approximately 30 nm, for example approximately 20 nm.

The electron injection layer can be formed on or above the electron transport layer. The electron injection layer may include or be formed from one or more of the following materials: NDN-26, MgAg, Cs2CO3, Cs3PO4, Na, Ca, K, Mg, Cs, Li, LiF; 2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole); 2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1 ,3,4-oxadiazole,2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 8-hydroxyquinolinolato-lithium, 4-(naphthalen-1-yl)-3,5-diphenyl- 4H-1,2,4-triazole; 1,3-bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]benzene; 4,7-diphenyl -1,10-phenanthroline (BPhen); 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole; Bis(2-methyl-8-quinolinolate)-4-( phenylphenolato)alu minium; 6,6'-Bis[5-(biphenyl-4-yl)-1,3,4-oxadiazo-2-yl]-2,2'-bipyridyl;2-phenyl-9,10-di(naphthalen-2-yl)-anthracene;2,7-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]-9,9-dimethylfluorene;1,3-Bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene;2-(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline;2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline;Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane;1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[4,5-f][1,10]phenanthroline; Phenyl-dipyrenylphosphine oxide; Naphthalinetetracarboxylic acid dianhydride or its imides; Perylenetetracarboxylic acid dianhydride or its imides; and materials based on silos with a silacyclopentadiene unit.

The electron injection layer may have a layer thickness in a range from approximately 5 nm to approximately 200 nm, for example in a range from approximately 20 nm to approximately 50 nm, for example approximately 30 nm.

In the case of an organic functional layer structure with two or more organic functional layer structure units, corresponding intermediate layers can be formed between the organic functional layer structure units. The organic functional layer structure units can each be formed individually according to an embodiment of the optically functional layer structure 22 explained above. The intermediate layer can be designed as an intermediate electrode. The intermediate electrode can be electrically connected to an external voltage source. The external voltage source can, for example, provide a third electrical potential at the intermediate electrode. However, the intermediate electrode can also have no external electrical connection, for example in that the intermediate electrode has a floating electrical potential.

The organic functional layer structure unit can, for example, have a layer thickness in a range, for example, from 10 nm to 3 μm, for example from 50 nm to 1 μm, for example from 100 nm to 300 nm.

The optoelectronic component 10 can optionally have further functional layers, for example arranged on or above the one or more emitter layers or on or above the electron transport layer. The further functional layers can be, for example, internal or external coupling/decoupling structures that can further improve the functionality and thus the efficiency of the optoelectronic component 10.

The second electrode 23 can be designed according to one of the embodiments of the first electrode 20, wherein the first electrode 20 and the second electrode 23 can be designed the same or different. The second electrode 23 can be designed as an anode or as a cathode. The second electrode 23 can have a second electrical connection to which a second electrical potential can be applied. The second electrical potential can be provided by the same or a different energy source as the first electrical potential. The second electrical potential may be different from the first electrical potential. The second electrical potential may, for example, have a value such that the difference from the first electrical potential has a value in a range from approximately 1.5 V to approximately 20 V, for example a value in a range from approximately 2.5 V to approximately 15V, for example a value in a range from about 3V to about 12V.

The encapsulation layer 24 can also be referred to as thin film encapsulation. The encapsulation layer 24 can be designed as a translucent or transparent layer. The encapsulation layer 24 forms a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture) and oxygen. In other words, the encapsulation layer 24 is designed in such a way that it cannot be penetrated by substances that can damage the optoelectronic component, for example water, oxygen or solvents, or can only be penetrated in very small proportions. The encapsulation layer 24 may be formed as a single layer, a layer stack, or a layer structure.

The encapsulation layer 24 may include or be formed from: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, poly(p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof.

The encapsulation layer 24 may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example a layer thickness of about 10 nm to about 100 nm, for example about 40 nm.

The encapsulation layer 24 may comprise a high refractive index material, for example one or more materials with a high refractive index, for example with a refractive index of at least 2.

If necessary, the first barrier layer on the carrier 12 can be designed to correspond to a configuration of the encapsulation layer 24.

The encapsulation layer 24 can be formed, for example, by means of a suitable deposition process, for example by means of an atomic layer deposition process (Atomic Layer Deposition (ALD)), e.g. a plasma-assisted atomic layer deposition process (Plasma Enhanced Atomic Layer Deposition (PEALD)) or a plasma-less atomic layer deposition process (Plasma-less Atomic Layer Deposition). (PLALD)), or by means of a chemical vapor deposition process (Chemical Vapor Deposition (CVD)), e.g. a plasma-enhanced chemical vapor deposition process (Plasma Enhanced Chemical Vapor Deposition (PECVD)) or a plasma-less chemical vapor deposition process (Plasma-less Chemical Vapor Deposition (PLCVD)), or alternatively using other suitable deposition processes.

If necessary, an input or output layer can be formed, for example, as an external film (not shown) on the carrier 12 or as an internal output layer (not shown) in the layer cross section of the optoelectronic component 10. The input/outcoupling layer can have a matrix and scattering centers distributed therein, the average refractive index of the input/outcoupling layer being greater than the average refractive index of the layer from which the electromagnetic radiation is provided. Furthermore, one or more anti-reflection layers can also be formed.

The adhesive layer 36 can, for example, have adhesive and/or varnish, by means of which the cover 38 is arranged, for example glued, on the encapsulation layer 24. The adhesive layer 36 can be transparent or translucent. The adhesive layer 36 can, for example, have particles that scatter electromagnetic radiation, for example light-scattering particles. As a result, the adhesive layer 36 can act as a scattering layer and can lead to an improvement in the color angle distortion and the output efficiency.

Dielectric scattering particles can be provided as light-scattering particles, for example made of a metal oxide, for example silicon oxide (SiO2), zinc oxide (ZnO), zirconium oxide (ZrO2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide ( Ga2Ox) aluminum oxide, or titanium oxide. Other particles may also be suitable, provided they have a refractive index that is different from the effective refractive index of the matrix of the adhesive layer 36, for example air bubbles, acrylate, or hollow glass spheres. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like can be provided as light-scattering particles.

The adhesive layer 36 can have a layer thickness of greater than 1 μm, for example a layer thickness of several μm. In various embodiments, the adhesive may be a lamination adhesive.

The adhesive layer 36 may have a refractive index that is less than the refractive index of the cover 38. For example, the adhesive layer 36 may include a low refractive index adhesive, such as an acrylate, that has a refractive index of approximately 1.3. However, the adhesive layer 36 can also have a high-index adhesive which, for example, has high-index, non-scattering particles and has a layer-thickness-averaged refractive index that approximately corresponds to the average refractive index of the organically functional layer structure 22, for example in a range from approximately 1.7 to approximately 2.0.

A so-called getter layer or getter structure, i.e. a laterally structured getter layer (not shown), can be arranged on or above the active area. The getter layer can be translucent, transparent or opaque. The getter layer may include or be formed from a material that absorbs and binds substances that are harmful to the active area. A getter layer can, for example, have a zeolite derivative or be formed from it. The getter layer may have a layer thickness of greater than approximately 1 μm, for example a layer thickness of several μm. In various embodiments, the getter layer may include a lamination adhesive or be embedded in the adhesive layer 36.

The cover 38 can be formed, for example, by a glass cover, a metal foil or a sealed plastic film cover. The cover 38 can be arranged, for example, by means of a frit connection (glass frit bonding/glass soldering/seal glass bonding) using a conventional glass solder in the geometric edge regions of the organic optoelectronic component 10 on the encapsulation layer 24 or the active area. The cover 38 may, for example, have a refractive index (for example at a wavelength of 633 nm) of 1.55.

For example, the optoelectronic component 10 can have more or fewer contact recesses 42, 44. Furthermore, all of the optoelectronic components 10 shown can have more or fewer layers. For example, various optical functional layers can be formed, which, for example, improve the efficiency of the optoelectronic component 10 or influence the radiation behavior of the optoelectronic component 10. For example, outcoupling layers, mirror layers, anti-reflective layers and/or scattering layers can be formed. Furthermore, the coupling elements 50 and/or the plug-in elements 60, 65 can be different in terms of their shape and number. Furthermore, the exemplary embodiments can be combined. For example, each of the coupling elements 50 shown can be arranged in a contact recess that extends completely or only partially through the optoelectronic component. Furthermore, each of the coupling elements 50 shown can have the wall 73 with the barbs 75. Furthermore, the coupling elements 50 can have more or fewer contact elements 53.

Claims (11)

Component arrangement with a first optoelectronic component (10) and at least one second optoelectronic component (70), and with an electrically conductive second plug-in element (65), which is connected via a coupling element (50) of the first optoelectronic component (10) to a contact area (32, 34) of the first optoelectronic component (10) is coupled and which is electrically coupled via a further coupling element (50) of the second optoelectronic component (70) to a contact area (32, 34) of the second optoelectronic component (70), and so on electrically couples the first optoelectronic component (10) to the second optoelectronic component (70), wherein the first optoelectronic component (10) and the at least one second optoelectronic component (70) have: - a carrier body (12), - an optoelectronic layer structure which is formed over the carrier body (12) and which has at least one contact region (32, 34) for electrically contacting the optoelectronic layer structure, - a cover body (38) which is arranged above the optoelectronic layer structure, - at least one contact recess (42, 44) which extends through the carrier body (12) and the cover body (38) and which has an undercut (48) in the contact area (32, 34), wherein in the undercut (48) at least part of the contact area (32, 34) is exposed, and - at least one coupling element (50), which has a plate-shaped insert element (52) and a holding element (54) for receiving an electrical conductor, for electrically contacting the optoelectronic component (10, 70), the insert element (52) being at least partially in the Undercut (48) is arranged and electrically coupled to the contact area (32, 34), wherein - the optoelectronic layer structure has an encapsulation layer (24) and/or an adhesive layer (36), and the contact recess (42, 44) extends through the encapsulation layer (24) and/or through the adhesive layer (36). Component arrangement according to Claim 1 , in which the insert element (52) in the optoelectronic components (10, 70) is disk-shaped. Component arrangement according to one of the preceding claims, in which the insert element (52) in the optoelectronic components (10, 70) is formed in the thickness direction with an interference fit with respect to the undercut (48). Component arrangement according to one of the preceding claims, in which the insert element (52) in the optoelectronic components (10, 70) has a central recess, at the edge of which the holding element (54) is formed. Component arrangement according to one of the preceding claims, in which in the optoelectronic components (10, 70) the insert element (52) has contact elements (53) which are in direct physical contact with the contact area (32, 34). Component arrangement according to one of the preceding claims, in which the encapsulation layer (24) is at least partially formed in the optoelectronic components (10, 70) between the insert element (52) and the contact area (32, 34) and in which the contact elements (53) extend through the encapsulation layer (24). Component arrangement according to one of the preceding claims, in which the insert element (52) in the optoelectronic components (10, 70) has a toothed washer or a serrated lock washer. Component arrangement according to Claim 4 , in which the insert element (52) has the central recess in the optoelectronic components (10, 70) and in which the holding element (54) min has at least two leaf springs (56), which are each arranged on the insert element (52) and extend in the direction away from the insert element (52) in such a way that a space is formed between the two leaf springs (56) which overlaps the recess, and that the gap becomes narrower in the direction away from the insert element (52). Component arrangement according to one of the preceding claims, wherein the optoelectronic components (10, 70) for electrically contacting the optoelectronic component (10, 70) have an electrically conductive first plug-in element (60), which is attached to the coupling element (50) by means of the holding element (54). is attached and which is electrically coupled to the contact area (32, 34) via the coupling element (50). Component arrangement according to one of the Claims 1 until 7 , in which the holding element (54) has a screw thread. Component arrangement according to one of the preceding claims, wherein the holding element (54) is formed centrally on the insert element (52) in the optoelectronic components (10, 70).

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