DE102012223159A1 - ORGANIC, OPTOELECTRONIC COMPONENT DEVICE AND METHOD FOR MANUFACTURING AN ORGANIC, OPTOELECTRONIC COMPONENT DEVICE - Google Patents

Abstract

In various embodiments, there is provided an organic optoelectronic device device (100, 110, 120, 130, 300) comprising the organic optoelectronic device device (100, 110, 120, 130, 300) comprising: a carrier (202); an organic optoelectronic device (106); and an overvoltage protection structure (108, 112, 114, 610); wherein the organic optoelectronic component (106) and the overvoltage protection structure (108, 112, 114, 610) are formed on or above the carrier (202); wherein the overvoltage protection structure (108, 112, 114, 610) and the organic, optoelectronic component (106) have at least one common layer; and wherein the overvoltage protection structure (108, 112, 114, 610) is electrically connected to the organic optoelectronic device (106).

Description

In various embodiments, an organic optoelectronic device device and a method of manufacturing an organic optoelectronic device device are provided.

Organic-based optoelectronic components, for example an organic light-emitting diode (OLED) or an organic solar cell, are finding increasing widespread use.

An OLED may have two electrodes, for example two contact metallization configured as an anode and a cathode, with an organic functional layer system therebetween. The organic functional layer system may comprise one or more emitter layers in which electromagnetic radiation is generated, for example, one or more charge carrier pair generation layer structures each comprising two or more charge generating layers (CGL). for charge carrier pair generation, and one or more electron block layers, also referred to as hole transport layer (HTL), and one or more hole block layers, also referred to as electron transport layer (s) (ETL) to direct the current flow.

Organic light-emitting diodes are sensitive electronic components, which may only be connected poled in one direction. A reverse operation is not provided and can lead to a permanent failure of the OLED. Likewise, electrostatic discharges (electrostatic discharge - ESD) can damage the OLED and / or lead to a permanent failure, the electrostatic discharge leading to a phn transition of the pn junction with irreversible damage.

In a conventional method of protecting an organic light emitting diode from reverse operation, a protective diode having a sufficiently high reverse voltage is connected in series with the OLED in series. In reverse operation, this protection diode sufficiently blocks reverse current flow, thereby preventing reverse current flow through the OLED.

In another conventional method of protecting an organic light emitting diode from reverse operation, the protection diode is externally reverse biased, i. antiparallel to the OLED, switched. If the OLED is contacted with reverse polarity, the protective diode conducts and short-circuits the voltage, the protective diode being designed for the current flowing through it and withstanding this current permanently or the protective diode short-circuiting the polarity reversal voltage only for a short period of time and the connected operating device short-circuiting (FIG. the current peak) detects and then shuts off.

In a conventional method for protecting an organic light-emitting diode from electrostatic discharges, a flexible printed circuit board (flex-pcb) is applied, for example bonded, to the OLED on the OLED. On this circuit board, an SMD protection diode (surface mounted device - SMD) is connected in anti-parallel to the forward direction of the OLED. This external protection diode can reversibly absorb or destroy ESD pulses. Thus, an ESD pulse can always be passed through the forward-biased diode depending on its polarity, i. either the protective diode or the optoelectronic device, drain. Discharge-like discharges at the reverse-biased OLED can be avoided in this way.

In order to be able to process optoelectronic components, work is conventionally carried out during processing in an ESD-free environment, which entails high costs for equipping the production lines. The upgrade of processing lines to create an ESD-free environment is for cost reasons for processors of optoelectronic devices only in exceptional cases into consideration.

In various embodiments, an organic, optoelectronic component device and a method for producing an organic, optoelectronic component device are provided, with which it is possible to realize a protection of the organic, optoelectronic component from electrostatic discharge and / or reverse polarity, without an external overvoltage protection structure ,

In the context of this description, an organic substance may be one in a chemically uniform form, regardless of the particular state of matter present, characterized by characteristic physical and chemical properties compound of the carbon are understood. Furthermore, in the context of this description, an inorganic substance can be understood as meaning a compound without carbon or a simple carbon compound, characterized by characteristic physical and chemical properties, regardless of the particular state of matter, in chemically uniform form. In the context of this description, an organic-inorganic substance (hybrid substance) can be understood as meaning a compound present in chemically uniform form, characterized by characteristic physical and chemical properties, regardless of the respective state of matter, with compounds which contain carbon and are free of carbon. In the context of this description, the term "substance" encompasses all substances mentioned above, for example an organic substance, an inorganic substance, and / or a hybrid substance. Furthermore, in the context of this description, a substance mixture can be understood to mean something which consists of constituents of two or more different substances whose constituents are, for example, distributed very finely. A substance class means a substance or mixture of one or more organic substances, one or more inorganic substances or one or more hybrid substances. The term "material" can be used synonymously with the term "substance".

In the context of this description, a first substance or a first substance mixture may be equal to a second substance or a second substance mixture if the chemical and physical properties of the first substance or first substance mixture are identical to the chemical and physical properties of the second substance or the first substance mixture second mixture of substances are.

In the context of this description, a first substance or a first substance mixture may be similar to a second substance or a second substance mixture if the first substance or the first substance mixture and the second substance or the second substance mixture have an approximately equal stoichiometric composition, approximately the same have chemical properties and / or approximately the same physical properties with respect to at least one size, for example density, refractive index, chemical resistance or the like.

Thus, with respect to the stoichiometric composition, for example, crystalline SiO ₂ (quartz) as equal to amorphous SiO ₂ (quartz glass), and can be considered as similar to SiO _x. However, with respect to the refractive index, crystalline SiO _{2 may be} different from SiO _x or amorphous SiO ₂ . By the addition of additives, for example in the form of dopings, may for example, amorphous SiO _{2 has} the same or a similar refractive index as having crystalline SiO _2, but then be in terms of chemical composition different from the crystalline SiO _2.

The reference quantity in which a first substance resembles a second substance may be explicitly stated or derive from the context, for example from the common properties of a group of substances or substance mixtures.

An electrical contact can for example be understood as an integration of an organic, optoelectronic component in an electrical circuit, wherein the circuit can be electrically closed, for example by means of the electrical contacting of the organic, optoelectronic component.

A dimensionally stable fabric can be made plastically moldable by adding plasticizers, for example, solvents, or increasing the temperature, i. be liquefied.

A plastic moldable substance may become dimensionally stable by means of a crosslinking reaction, removal of plasticizers and / or heat, i. be solidified.

The solidification of a substance or mixture of substances, ie the transition of a substance from moldable to dimensionally stable, may involve a change of the viscosity, for example an increase of the viscosity from a first viscosity value to a second viscosity value. The second viscosity value may be many times greater than the first viscosity value, for example in a range of about 10 to about 10 ⁶ . The fabric may be formable at the first viscosity and dimensionally stable at the second viscosity.

The solidification of a substance or mixture of substances, i. the transition of a substance from malleable to dimensionally stable, may include a process or process in which low molecular weight components are removed from the substance or mixture, for example solvent molecules or low molecular weight, uncrosslinked constituents of the substance or mixture, for example drying or chemical crosslinking of the substance or the mixture of substances. The substance or the substance mixture can, for example, in the moldable state have a higher concentration of low molecular weight substances in the entire substance or substance mixture than in the dimensionally stable state.

However, a body of a dimensionally stable substance or mixture of substances may be formable, for example when the body is arranged as a film, for example a plastic film, a glass film or a metal foil. For example, such a body may be said to be mechanically flexible because changes in the geometric shape of the body, such as bending a film, may be reversible. However, a mechanically flexible body, for example a film, can also be plastically moldable, for example by solidifying the mechanically flexible body after deformation, for example deep-drawing a plastic film.

In the context of this description, an electronic component can be understood as a component which relates to the control, regulation or amplification of an electric current, for example by means of semiconductor components. An electronic component may be, for example, a diode, a transistor, a thermogenerator, an integrated circuit or a thyristor.

In various embodiments, a protection diode may be formed as a suppressor diode (transient absorption Zener diode TAZ diode or transient voltage suppressor diode-TVS diode), a Zener diode or a Schottky diode. A protection diode may also be referred to as an anti-kick-back diode, a reverse bias diode, a flyback diode, rectifier diode, or a snubbing diode. In various embodiments, a protection diode may have a configuration of two or more of the diodes described above, for example, in series or parallel, for example, in a unidirectional or bidirectional configuration. For example, in various embodiments, a protection diode may include a suppressor diode in a unidirectional or bidirectional configuration.

In various embodiments, the response time of a protection diode may be smaller than the response time of the device, which should be protected by means of the protection diode. The response time can be understood as the time at which a semiconductor component blocks a current flow when the voltage of the forward direction in the reverse direction is reversed with respect to the semiconductor component. The response time may also be referred to as the inhibit time, the turn-on / off time, the clamping time, or the forward / reverse recovery time.

In the context of this description, an overvoltage protection structure can absorb and / or short-circuit high voltages, for example electrostatic discharges ESD, voltage bursts or surge pulses.

In the context of this description, an optoelectronic component can be understood to mean an embodiment of an electronic component, the optoelectronic component having an optically active region. The optically active region can absorb electromagnetic radiation and form a photocurrent therefrom or emit electromagnetic radiation by means of an applied voltage to the optically active region.

In the context of this description, an organic optoelectronic component in various configurations, for example as an organic light emitting diode (OLED), an organic photovoltaic system, for example an organic solar cell; in the organic functional layer system comprise or be formed from an organic substance or an organic substance mixture which is, for example, adapted for providing electromagnetic radiation from a supplied electric current or for providing an electric current from a provided electromagnetic radiation.

In various embodiments, a component emitting electromagnetic radiation can be a semiconductor device emitting electromagnetic radiation and / or a diode emitting electromagnetic radiation, a diode emitting organic electromagnetic radiation, a transistor emitting electromagnetic radiation or a transistor emitting organic electromagnetic radiation be. The radiation may, for example, be light in the visible range, UV light and / or infrared light. In this context, the electromagnetic radiation emitting device may be formed, for example, as a light emitting diode (LED) as an organic light emitting diode (OLED), as a light emitting transistor or as an organic light emitting transistor. The light emitting device may be part of an integrated circuit in various embodiments. Furthermore, a plurality of light-emitting components may be provided, for example housed in a common housing.

In the context of this description, provision of electromagnetic radiation can be understood as meaning emission of electromagnetic radiation.

In the context of this description, absorption of electromagnetic radiation can be understood to mean absorption of electromagnetic radiation.

In the context of this description, an optically active region of an optoelectronic component can be understood as the region of an optoelectronic component which can absorb electromagnetic radiation and form a photocurrent therefrom or emit electromagnetic radiation by means of an applied voltage to the optically active region.

An optoelectronic component which has two planar, optically active sides can, for example, be transparent, for example as a transparent organic light-emitting diode.

However, the optically active region can also have a planar, optically active side and a planar, optically inactive side, for example an organic light-emitting diode which is set up as a top emitter or bottom emitter.

In various embodiments, there is provided an organic optoelectronic device device comprising the organic optoelectronic device device: a carrier; an organic, optoelectronic device; and a surge protection structure; wherein the organic optoelectronic component and the overvoltage protection structure are formed on or above the carrier; wherein the overvoltage protection structure and the organic, optoelectronic component have at least one common layer; and wherein the overvoltage protection structure is electrically connected to the organic optoelectronic device.

In one embodiment, the organic, optoelectronic component can be formed as an organic light-emitting diode or an organic solar cell.

In one embodiment, the overvoltage protection structure may be formed electrically in series with the organic, optoelectronic component.

In one embodiment, the overvoltage protection structure may be formed as a protective diode, wherein the protective diode is formed in the forward direction to the forward direction of the organic, optoelectronic component. In other words, the protective diode formed in series with the organic, optoelectronic component can have a forward direction which corresponds to the forward direction of the organic, optoelectronic component.

In one embodiment, the protective diode may be configured such that the breakdown voltage of the protective diode in the reverse direction is greater than a voltage pulse occurring at the organic, optoelectronic component device in the reverse direction of the organic optoelectronic component.

In one embodiment, the organic, optoelectronic component may have a first electrode and a second electrode, and the overvoltage protection structure may have a first electrically conductive section and a second electrically conductive section, wherein at least one electrically conductive section of the overvoltage protection structure is connected to one electrode of the organic , Optoelectronic component is electrically coupled.

In one embodiment, the overvoltage protection structure can be formed electrically parallel to the organic, optoelectronic component.

In one embodiment, the organic, optoelectronic component may have a first electrode and a second electrode, and the overvoltage protection structure may have a first electrically conductive portion, which is electrically coupled to the first electrode and a second electrically conductive portion which is electrically connected to the second electrode is coupled.

In one embodiment, the first electrically conductive portion may comprise a different material than the second electrically conductive portion and / or the first electrode and / or the second electrode.

In one embodiment, the first electrically conductive portion may be a region of the first electrode and / or the second electrically conductive portion may be a region of the second electrode.

In one embodiment, the organic, optoelectronic component device may have a first contact pad and a second contact pad, wherein the contact pads for electrically contacting the organic, optoelectronic component device are arranged and wherein the first electrically conductive portion and / or the first electrode as at least a portion of and / or wherein the second electrically conductive portion and / or the second electrode is / are arranged as at least one region of the second contact pad.

In one embodiment, the electrically conductive portions may be an overlapping arrangement, i. mutually staggered arrangement and / or shifted arrangement to each other, wherein parts of the electrically conductive portions may be parallel to each other, for example, at a distance from each other. The electrically conductive sections may also be formed in different planes, in the sense of different layers in a cross-sectional view or drawing plane, for example similar to a cross.

In one embodiment, the electrically conductive portions may have a complementary shape and / or arrangement with each other, wherein the first electrically conductive portion may be formed partially and / or completely perpendicular and / or parallel to the second electrically conductive portion.

In one embodiment, a parallel arrangement of the electrically conductive sections may be formed, for example, as a partially and / or completely concentric arrangement and / or coaxial arrangement of the electrically conductive sections. The second electrically conductive portion may, for example, form the inner electrically conductive region of a concentric arrangement of electrically conductive sections, wherein the interior of the second electrically conductive section may, for example, be hollow or, for example, comprise an electrically insulating material, or for example the same, a similar or other electrically conductive material as or as the first electrically conductive portion.

The electrically conductive sections may for example have a planar shape or have a tapered shape. For example, a surface of electrically conductive portions may be similar to a pin or may be formed similarly to a planar plane. For example, electrically conductive portions having planar shapes may be similar to a pin or pin, or similar to a planar plane. Electrically conductive portions having a tapered shape may be formed, for example, similar to a tip or like a rounding.

In one embodiment, the overvoltage protection structure may be formed as a varistor, wherein the varistor is formed electrically parallel to the organic optoelectronic component.

In one embodiment, the varistor may be formed on one of the surfaces of the organic, optoelectronic component.

In one embodiment, the varistor can be partially or completely formed by layers of the organic, optoelectronic component. This type of embodiment can also be understood as forming a varistor in the interior of the organic, optoelectronic component.

In one embodiment, the varistor can be electrically insulated in the interior of the organic, optoelectronic component with respect to further layers of the organic, optoelectronic component.

In one embodiment, the overvoltage protection structure may be formed as a protective diode, wherein the protective diode is formed electrically parallel to the organic optoelectronic component.

In one embodiment, the protection diode can be designed such that the response voltage of the protective diode in the reverse direction of the organic, optoelectronic component is smaller than the breakdown voltage of the organic, optoelectronic component in the reverse direction, for example with respect to a voltage pulse occurring at the organic optoelectronic device in the reverse direction.

In one embodiment, the overvoltage protection structure may be formed as a spark gap, wherein the spark gap is formed electrically parallel to the organic optoelectronic component.

In one embodiment, the common layer can be structured, for example in order at least partially to form the overvoltage protection structure, for example to form the first electrically conductive section and the second electrically conductive section from the layer of one of the electrodes of the organic, optoelectronic component.

In one embodiment, the common layer can have at least one electrode of the organic, optoelectronic component and at least one electrically conductive section of the overvoltage protection structure or can be electrically connected thereto.

In one embodiment, the overvoltage protection structure can be formed next to the organic, optoelectronic component.

In one embodiment, the overvoltage protection structure may be formed below or on the organic, optoelectronic component.

In one embodiment, the overvoltage protection structure may be formed as a structured region of the organic, optoelectronic component, for example a spark gap, a varistor or a protective diode, i. a region without optically active layers, for example without emitter layers.

In one embodiment, the organic, optoelectronic component device may have an optically active region and an optically inactive region, wherein the overvoltage protection structure is formed in the optically inactive region.

In one embodiment, the overvoltage protection structure may be formed in the geometric edge region of the organic, optoelectronic component, for example in the edge region in the interior of the organic, optoelectronic component or on or above the organic, optoelectronic component.

In one embodiment, the overvoltage protection structure can be exposed on a surface of the organic, optoelectronic component or surrounded by an electrically insulating layer or an electrically conductive layer.

In one embodiment, at least a part of the overvoltage protection structure may be formed on the first contact pad and / or the second contact pad, for example as a varistor bridge.

In various embodiments, the overvoltage protection structure may comprise a configuration of one or more spark gap (s), protective diode (s) and / or varistor (s), which may be electrically connected in series or in parallel with each other.

In one embodiment, an overvoltage protection structure may comprise at least two protective diodes which are formed electrically parallel or in series with each other, wherein the overvoltage protection structure is formed electrically parallel or in series with the organic optoelectronic component.

In one embodiment, an overvoltage protection structure can have, electrically parallel to the organic optoelectronic component, at least two protective diodes which are connected in series with one another and whose forward direction is opposite. For example, the protection diodes may be configured to have an amount of response voltage of about 0.6 V and, for example, an amount of breakdown voltage in a range of about 4 V to about 15 V. The magnitude of the breakdown voltage may be dependent upon the configuration of the organic optoelectronic device and may, for example, have a value in a range of about 4 V to about 1000 V.

In various embodiments, a protection diode may have a configuration of two or more pn junctions, i. Diodes, for example, in a series circuit or parallel connection, for example in a unidirectional or a bidirectional configuration.

In one embodiment, a protection diode may include a suppressor diode in a unidirectional or bidirectional configuration.

The protective diode described below may be formed in various configurations electrically parallel or in series with the organic optoelectronic device. In one embodiment, the organic, optoelectronic component device may be designed such that the response time of the protective diode is smaller than the response time of the organic, optoelectronic component.

In one embodiment, the protection diode may comprise at least one hole-conducting layer and at least one electron-conducting layer, the at least one hole-conducting layer having a physical contact with the at least one electron-conducting layer; and wherein at least one hole-conducting layer is electrically connected to the first electrically conductive portion, and wherein at least one electron-conducting layer is electrically connected to the second electrically-conductive portion. At a common interface of the at least one electron-conducting layer with the at least one hole-conducting layer charge carrier pairs can be generated.

In one embodiment, at least one electron-conducting layer may have a layer thickness in a range from about 1 nm to about 500 nm.

In one embodiment, at least one hole-conducting layer may have a layer thickness in a range of about 1 nm to about 500 nm.

In one embodiment, the substance or mixture of at least one electron-conducting layer and / or the hole-conducting layer may have a transmission greater than about 90% in a wavelength range of about 450 nm to about 650 nm.

In one embodiment, the substance or the substance mixture of a hole-conducting layer may have a valence band approximately equal to the conduction band of the substance or the substance mixture of the electron-conducting layer with which the hole-conducting layer is in physical contact.

In one embodiment, the at least one electron-conducting layer and / or the at least one hole-conducting layer may comprise or be formed from a mixture of a matrix and a dopant.

In one embodiment, the at least one hole-conducting layer can have or be formed from an intrinsically hole-conducting substance.

In an embodiment, the at least one hole-conductive layer, have one of the following intrinsic hole-conducting materials or may be formed from: NPD, HAT-CN, Cu (I) pFBz, MoO _x, WO _x, VO _x, ReO _x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, F16CuPc.

In one embodiment, the at least one hole-conducting layer can be formed from a mixture of matrix and p-type dopant.

• • HAT-CN, Cu(I)pFBz, MoO_x, WO_x, VO_x, ReO_x, F4-TCNQ, NDP-2, NDP-9, Bi(III)pFBz, F16CuPc, HTMO14:Cu(II)pFBz, NPD:MoO_x, PEDOT:PSS, HT508;
• • NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidin);
• • beta-NPB N,N'-Bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidin); TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidin); Spiro TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidin);
• • Spiro-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-spiro); DMFL-TPD N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethyl-fluoren);
• • DMFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-dimethyl-fluoren);
• • DPFL-TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl-fluoren);
• • DPFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenyl-fluoren);
• • Spiro-TAD (2,2',7,7'-Tetrakis(n,n-diphenylamino)- 9,9'-spirobifluoren);
• • 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluoren;
• • 9,9-Bis[4-(N,N-bis-naphthalen-2-yl-amino)phenyl]-9H-fluoren;
• • 9,9-Bis[4-(N,N'-bis-naphthalen-2-yl-N,N'-bis-phenyl-amino)-phenyl]-9H-fluor;
• • N,N'-bis(phenanthren-9-yl)-N,N'-bis(phenyl)-benzidin;
• • 2,7-Bis[N,N-bis(9,9-spiro-bifluorene-2-yl)-amino]-9,9-spiro-bifluoren;
• • 2,2'-Bis[N,N-bis(biphenyl-4-yl)amino]9,9-spiro-bifluoren;
• • 2,2'-Bis(N,N-di-phenyl-amino)9,9-spiro-bifluoren;
• • Di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexan;
• • 2,2',7,7'-tetra(N, N-di-tolyl)amino-spiro-bifluoren; und
• • N, N,N',N'-tetra-naphthalen-2-yl-benzidin
• • NPD, NHT5, NHT18, NHT49.

In one embodiment, the matrix of the at least one hole-conducting layer may comprise or be formed from one of the following substances:

• • HAT-CN, Cu (I) pFBz, MoO _x, WO _x, VO _x, ReO _x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, F16CuPc, HTMO14: Cu (II) pFBz NPD: MoO _x, PEDOT: PSS, HT508;
• NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine);
• Beta-NPB N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine); TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine);
• Spiro-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro); DMFL-TPD N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene);
• DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene);
• DPFL-TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene);
• DPFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene);
• Spiro-TAD (2,2 ', 7,7'-tetrakis (n, n-diphenylamino) -9,9'-spirobifluorene);
• 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) -phenyl] -9H-fluorene;
• 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) -phenyl] -9H-fluorene;
• • 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl-amino) -phenyl] -9H-fluoro;
• N, N'-bis (phenanthrene-9-yl) -N, N'-bis (phenyl) -benzidine;
• • 2,7-bis [N, N-bis (9,9-spiro-bifluoren-2-yl) -amino] -9,9-spiro-bifluorene;
• 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene;
• 2,2'-bis (N, N-di-phenyl-amino) 9,9-spiro-bifluorene;
• Di- [4- (N, N-ditolylamino) -phenyl] cyclohexane;
• 2,2 ', 7,7'-tetra (N, N-di-tolyl) amino-spiro-bifluorene; and
• • N, N, N ', N'-tetra-naphthalen-2-yl-benzidine
• NPD, NHT5, NHT18, NHT49.

In one embodiment, the dopant, the have at least one hole-conductive layer one of the following substances or formed therefrom include: NPD, HAT-CN, Cu (I) pFBz, MoO _x, WO _x, VO _x, ReO _x, F4-TCNQ, NDP -2, NDP-9, Bi (III) pFBz, F16CuPc.

In one embodiment, the p-type dopant may have a mass fraction with respect to the at least one electron-conducting layer in a range of about 0.1% to about 10%, for example, in a range of about 1% to about 2%.

In one embodiment, the at least one electron-conducting layer may comprise or be formed from an intrinsically electron-conducting substance.

In one embodiment, the intrinsic electron-conducting layer may comprise or be formed from one of the following substances: Bi (III) pFBz, F16CuPc, NDN-1, NDN-26, MgAg, Cs ₂ CO ₃ , Cs ₃ PO ₄ , Na, Ca, K, Mg, Cs, Li, LiF, Alq ₃ .

In one embodiment, the at least one electron-conducting layer can be formed from a mixture of matrix and n-dopant.

• • NET-18, NET-5, NDN-26, ETM033, ETM036, BCP, BPhen;
• • 2,2',2" -(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazol);
• •2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazol,2,9-Dimethyl-4,7-diphenyl-1,10-phenanthrolin (BCP);
• • 8-Hydroxyquinolinolato-lithium, 4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazol;
• • 1,3-Bis[2-(2,2'-bipyridin-6-yl)-1,3,4-oxadiazo-5-yl]benzol;
• • 4,7-Diphenyl-1,10-phenanthrolin (BPhen);
• • 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazol;
• • Bis(2-methyl-8-quinolinolat)-4-(phenylphenolato)aluminium;
• • 6,6'-Bis[5-(biphenyl-4-yl)-1,3,4-oxadiazo-2-yl]-2,2'-bipyridyl;
• • 2-phenyl-9,10-di(naphthalen-2-yl)-anthracen;
• • 2,7-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]-9,9-dimethylfluoren;
• • 1,3-Bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzol;
• • 2-(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline;
• • 2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline;
• • Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane;
• • 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[4,5-f][1,10]phenanthroline;
• • Phenyl-dipyrenylphosphinoxid;
• • Naphtahlintetracarbonsäuredianhydrid bzw. dessen Imide;
• • Perylentetracarbonsäuredianhydrid bzw. dessen Imide; und
• • Stoffen basierend auf Silolen mit einer Silacyclopentadieneinheit.

In one embodiment, the matrix of the at least one electron-conducting layer may include or be formed from one of the following substances:

• NET-18, NET-5, NDN-26, ETM033, ETM036, BCP, BPhen;
• 2,2 ', 2 "- (1,3,5-benzene triyl) tris (1-phenyl-1-H-benzimidazole);
• 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP);
• • 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazole;
• 1,3-bis [2- (2,2'-bipyridin-6-yl) -1,3,4-oxadiazo-5-yl] benzene;
• 4,7-diphenyl-1,10-phenanthroline (BPhen);
• • 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazole;
• Bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum;
• 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazol-2-yl] -2,2'-bipyridyl;
• 2-phenyl-9,10-di (naphthalen-2-yl) -anthracene;
• 2,7-bis [2- (2,2'-bipyridino-6-yl) -1,3,4-oxadiazo-5-yl] -9,9-dimethylfluorene;
• 1,3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazol-5-yl] benzene;
• 2- (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthrolines;
• 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthrolines;
• Tris (2,4,6-trimethyl-3- (pyridin-3-yl) phenyl) boranes;
• 1-methyl-2- (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5-f] [1,10] phenanthrolines;
• Phenyl-dipyrenylphosphine oxide;
• Naphthalenetetracarboxylic dianhydride or its imides;
• Perylenetetracarboxylic dianhydride or its imides; and
• • Materials based on siloles with a silacyclopentadiene moiety.

In one embodiment, the n-dopant of the at least one electron-conducting layer may comprise or be formed from one of the following substances: NDN-1, NDN-26, MgAg, Cs ₂ CO ₃ , Cs ₃ PO ₄ , Na, Ca, K, Mg , Cs, Li, LiF, Alq ₃ .

In one embodiment, the n-type dopant may have a mass fraction with respect to the hole-conducting layer in a range of about 0.1% to about 10%, for example in a range of about 1% to about 2%.

In one embodiment, the n-type dopant may have a higher or a lower mass fraction of the at least one electron-conducting layer of matrix and n-type dopant than the p-type dopant on the hole-conducting layer of matrix and p-type dopant. In other words, the at least one hole-conducting layer and the at least one electron-conducting layer may be asymmetrically doped.

In one embodiment, the varistor may comprise or be formed from a carrier matrix and at least one material that has varistor properties, the material having varistor properties being embedded in the carrier matrix.

In one embodiment, the material of the carrier matrix may be arranged such that the varistor has dimensional stability after the formation of the varistor, i. the viscosity and modulus of elasticity of the carrier matrix does not change by heat and / or electromagnetic radiation such that the carrier matrix is moldable, i. becomes liquid and or plastically deformable. In other words, the material of the carrier matrix of the varistor can be set up such that the varistor has dimensional stability during operation of the organic, optoelectronic component.

In one embodiment, the carrier matrix of the varistor may comprise an electrically insulating material.

In one embodiment, the carrier matrix of the varistor may comprise or be formed as material of one of the following materials: a crosslinked, electrically nonconducting polymer, for example an elastomer, an epoxide, a silicone or a silazane.

In one embodiment, the at least one material having varistor properties may comprise or be formed from one of the following substances or a stoichiometric compound thereof: silicon carbide, a metal oxide, for example a zinc oxide, bismuth oxide, chromium oxide, manganese oxide or cobalt oxide.

In one embodiment, the at least one material having varistor characteristics of the varistor may be formed in the form of a plurality of particles in the carrier matrix of the varistor, the particles being, for example, an arbitrary, i. random shape, for example as flakes (flakes); or may have a spherical shape.

In one embodiment, at least two particles with varistor properties can have different materials with varistor properties, for example a varistor has at least one zinc oxide particle and at least one silicon carbide particle; or a zinc oxide particle and a zinc oxide particle with a further material, for example with varistor properties, for example silicon carbide or another material, for example aluminum.

In one embodiment, the two particles having different materials may have the varistor characteristics, arranged to form an electric field at the interfaces of the particles having varistor characteristics, i. it can come to form a space charge zone.

In one embodiment, the particles with varistor properties may be arranged in the carrier matrix of the varistor such that an electrically continuous connection of material with varistor properties is formed by the carrier matrix of the varistor, wherein the carrier matrix with particles having varistor properties has a carrier matrix with conductive particles, a conductive carrier matrix and / or a conductive layer can connect.

An electrically continuous coherent connection of the particles with varistor properties can be understood as an electrical connection parallel to the current direction of the organic, optoelectronic component. It is essential to an organic, optoelectronic component electrically connected in parallel electrically continuous connection of particles with varistor in the carrier matrix of the varistor, wherein the response of this continuously connected compound above the threshold voltage of the organic, optoelectronic device and below the breakdown voltage of the organic, optoelectronic Component is formed. The contiguous connection may comprise an arbitrary, ie random, path or a directional, approximately linear path.

In one embodiment, the particles with varistor properties parallel to the current flow direction of the organic, optoelectronic component may be formed in the carrier matrix of the varistor such that the response voltage of the varistor is greater than a first voltage value and less than a second voltage value. In one embodiment, the first voltage value may have approximately the value of the response voltage of the organic optoelectronic device, i. the varistor has a response voltage up to which the organic, optoelectronic component can work regularly. The response voltage of the varistor should be formed above the threshold voltage, since a varistor has no reverse direction, i. point-symmetric with respect to polarity reversal works. The varistor may have the highest possible resistance below the response voltage, for example in a range from approximately 50 kΩ to approximately 50 MΩ or a low current flow, for example in a range from approximately 0.1 μA to approximately 10 μA.

In one configuration, the second voltage value may have an amount smaller than the breakdown voltage of the organic, optoelectronic component and / or may be smaller than the voltage at which irreversible damage occurs in the organic, optoelectronic component. The second voltage value of the varistor may be dependent on the configuration of the organic optoelectronic component, since the magnitude of the breakdown voltage of the organic, optoelectronic component is dependent on the design of the organic, optoelectronic component. For example, the second voltage value of the varistor may be an amount in a range of approximately 4 V be greater than about 200 V, for example greater than about 4 V, for example, greater than about 8 V, for example greater about 16 V.

In the voltage range between response voltage of the varistor and breakdown voltage of the organic, optoelectronic component, the differential conductivity of the varistor should be designed such that in the model of an electrostatic discharge of a human body (human body model HBM), with a voltage above the breakdown voltage of the organic, optoelectronic device , on a series resistor connected in series with a resistance of 1500 Ω, over the parallel circuit of varistor and organic, optoelectronic device, the voltage drop across the organic, optoelectronic device is always below the breakdown voltage of the organic, optoelectronic device. For example, the low differential conductivity of silicon carbide can cause that at a response voltage of the varistor with a value of about the threshold voltage of the organic, optoelectronic device, the voltage dropping across the series resistor is too low, so that a voltage above the breakdown voltage of the organic , optoelectronic component is applied over the organic, optoelectronic component, ie it can come to Durschlag in the organic, optoelectronic device.

Above the first voltage value and below the second voltage value, the varistor should become conductive, i. the electrical resistance should be very small with respect to the resistance of the organic, optoelectronic component, for example in a range of about 0 Ω to about 20 Ω, for example, 0.2 Ω.

In one embodiment, the varistor may be configured such that the material of the carrier matrix and the material having varistor characteristics have approximately equal thermal expansion, i. the carrier matrix compensates for the expansion of the waste heat of the particles with varistor properties which is produced by means of an electrical current, wherein the heat can also be supplied or removed via the electrically conductive sections of the overvoltage protection structure.

In one embodiment, the varistor can partially or completely penetrate one or more layers of the organic, optoelectronic component, for example, be formed vertically in the organic, optoelectronic component.

The macroscopic nature of the varistor, for example the dimension of the varistor, may be determined by the nature of the particles having varistor characteristics and the spacing of the electrically conductive portions of the overvoltage protection structure from each other. What is essential is the number of particle interfaces at which an electric field can form, which are directed counter to the external electric field, since the response voltage of the varistor is proportional to this number.

In one embodiment, the overvoltage protection structure can be designed such that a dielectric, for example air, is formed between the first electrically conductive section and the second electrically conductive section. The first electrically conductive portion and the second electrically conductive portion may be relatively so arranged to one another and arranged relative to each other, that from a voltage applied across the first electrically conductive portion and the second electrically conductive portion Ansprechspannung, a spark gap between the first electrically conductive portion and the second electrically conductive portion is formed; wherein the response voltage as value has an amount which is greater than the magnitude of the threshold voltage of the organic, optoelectronic component and less than the magnitude of the breakdown voltage of the organic, optoelectronic component and / or be less than the voltage at which it is in the organic , Optoelectronic device comes to irreversible damage. The second voltage value of the spark gap may be dependent on the design of the organic optoelectronic component, since the amount of the breakdown voltage of the organic, optoelectronic component is dependent on the configuration of the organic, optoelectronic component. For example, the second voltage value of the spark gap may have an amount ranging from about 4 V to about 200 V, for example greater than about 4 V, for example greater than about 8 V, for example greater than about 16 V.

The actual operating voltage of the spark gap for an organic, optoelectronic component can be dependent on the specific configuration of the electrically conductive sections and the dielectric between the electrically conductive sections, so that frequently a voltage range is specified within which a spark gap between the electrically conductive sections in one certain distance is formed. For a spark gap, the typical dielectric breakdown strength of air may have a response voltage in a range of about 1 kV / mm to about 3 kV / mm. For electrically conductive sections spaced 1 mm apart, a spark may skip and thus discharge if the potential difference between the electrically conductive sections has a value greater than about 3 kV. At least from this potential difference, the electrical resistance of the spark gap can be very small with respect to the resistance of the organic, optoelectronic device in the reverse direction, for example in a range of about 0 Ω to about 500 Ω. At about 1 kV, however, a discharge of 1 mm and a plane-parallel electrically conductive sections is not to be expected.

For other dielectrics, the response voltage may be different than in air. With the choice of the dielectric at a constant distance, the response voltage of the spark gap can be changed.

In one configuration, the dielectric between the first electrically conductive section and the second electrically conductive section may comprise or be formed from one of the following materials: an electrically insulating, crosslinkable organic and / or inorganic compound, for example an epoxy resin, a silicone or a ceramic.

In one configuration, the dielectric between the first electrically conductive section and the second electrically conductive section may comprise or be formed from a vacuum or a gas: for example air, oxygen, carbon dioxide, nitrogen, ozone or a noble gas.

However, the electrically conductive connections should be set up such that the value of the operating voltage of the spark gap is formed between the threshold voltage of the organic, optoelectronic component to be protected and the breakdown voltage of the organic, optoelectronic component.

Up to the minimum value of the spark gap response, the organic optoelectronic device should be able to operate normally without sparking between the electrically conductive sections, i. a spark gap is formed. A typical value for a threshold voltage of an organic, optoelectronic component, for example an organic light-emitting diode, may be dependent on the configuration of the organic optoelectronic component and may be, for example, in a range of approximately 0 V to approximately 50 V, for example in a range of approximately 4 V up to about 15 V.

The response voltage of the spark gap, i. The voltage which is necessary to form a sparkover between the first electrically conductive section and the second electrically conductive section will therefore have at least one voltage value that is greater than the magnitude of the threshold voltage of the organic, optoelectronic component. The spark gap may have the highest possible resistance below the response voltage, for example in a range from approximately 1 MΩ to approximately 1 GΩ or a low current flow, for example in a range from approximately 10 μA to approximately 100 μA.

The voltage value of the spark gap is formed from the latest a sparkover, ie the maximum operating voltage of the Spark gap in which it comes to reducing the potential difference, should be formed below the voltage of the optoelectronic device, which leads to irreversible damage to the optoelectronic device, otherwise protection of the optoelectronic device from electrostatic discharges can not be guaranteed. A typical breakdown voltage may have an amount, for example, greater than approximately 4 V, for example greater than approximately 8 V, for example greater than approximately 15 V, depending on the configuration of the optoelectronic component.

An embodiment of the electrically conductive sections which fulfill these conditions may, for example, have a spacing of approximately 50 μm and an air dielectric. This embodiment has the advantage that it can be easily manufactured or executed in terms of process technology.

In one configuration, the first electrically conductive section may be designed, for example, complementary, perpendicular, parallel, concentric or divergent in orientation relative to the second electrically conductive section. A divergent orientation of the electrically conductive sections can be arranged, for example, as a horn bow and / or Jacob's ladder. As a result, the radio link can be deleted when the voltage drops below the operating voltage.

In one embodiment, the surface of the first electrically conductive portion and / or the surface of the second electrically conductive portion, between which forms the spark gap, have a surface geometry of the following geometric shapes: flat, round, rough, pointed, and / or complementary to each other ,

Electrically conductive portions of tapered shape may be formed, for example, similar to a tip or like a curve. By means of the tapered shape, the minimum value of the response voltage can be reduced, since the tapered shapes can locally have a higher field strength than planar shapes.

The geometric shapes can be set up regularly such that they have a geometric axis of symmetry, wherein the symmetry axis can be a mirror symmetry and / or additionally a rotational symmetry.

In one embodiment, the smallest distance of the first electrically conductive portion from the second electrically conductive portion, between which forms the spark gap, have a value in a range of about 1 micron to about 100 microns.

In one embodiment, the first electrically conductive portion and the second electrically conductive portion may be surrounded by an encapsulation, for example enclosed in a cavity, part of a sectional plane of a carrier of the optoelectronic component, or surrounded by a potting material, for example, an electrically insulating , crosslinkable organic and / or inorganic compound, for example an epoxy resin or a silicone.

The encapsulation may be formed as a mechanical protection for the electrically conductive portions such that the distance between the surfaces of the electrically conductive portions and the shape of the surfaces of the electrically conductive portions with respect to external force effects, such as a shock, impact, camber or a bend before Changes, such as increasing or decreasing the distance or deforming the surface of the electrically conductive portions are protected.

In one embodiment, the encapsulation may be configured such that the dielectric, for example air, is protected from environmental influences, for example a change in the atmospheric humidity and / or an irradiation of ionizing radiation, for example UV radiation or X-radiation. These environmental influences could change the necessary voltage which should be present across the electrically conductive sections such that the formation of a spark gap is formed at a value of the applied voltage which is below the threshold voltage of the organic, optoelectronic component to be protected or above the breakdown voltage of the protected one organic, optoelectronic component takes place and so may affect the function of the device to be protected or the ESD protection.

In various embodiments, there is provided a method of fabricating an organic optoelectronic device device, the method comprising: forming an organic optoelectronic device and an overvoltage protection structure on or over a carrier; wherein the overvoltage protection structure and the organic, optoelectronic component have at least one common layer; and wherein the overvoltage protection structure is electrically connected to the organic, optoelectronic device.

In one embodiment of the method, the organic, optoelectronic component as an organic light emitting diode or an organic solar cell can be formed.

In one embodiment of the method, the overvoltage protection structure can be formed electrically in series with the organic, optoelectronic component.

In one embodiment of the method, the overvoltage protection structure can be formed as a protective diode, wherein the protective diode is formed in the forward direction to the forward direction of the organic, optoelectronic component. In other words, the protective diode formed in series with the organic, optoelectronic component can have a forward direction which corresponds to the forward direction of the organic, optoelectronic component.

In one embodiment of the method, the protective diode can be formed such that the breakdown voltage of the protective diode in the reverse direction is greater than a voltage pulse occurring at the organic, optoelectronic component device in the reverse direction of the organic optoelectronic component.

In one embodiment of the method, the organic, optoelectronic component may be formed with a first electrode and a second electrode, and the overvoltage protection structure may be formed with a first electrically conductive section and a second electrically conductive section, wherein at least one electrically conductive section of the overvoltage protection device is formed. Structure is electrically coupled to an electrode of the organic, optoelectronic component.

In one embodiment of the method, the overvoltage protection structure can be formed electrically parallel to the organic, optoelectronic component.

In one embodiment of the method, the organic, optoelectronic component can be formed with a first electrode and a second electrode, and the overvoltage protection structure can be formed with a first electrically conductive section, which is electrically coupled to the first electrode and a second electrically conductive gate, which is electrically coupled to the second electrode.

In one embodiment of the method, the first electrically conductive portion may comprise a different material than the second electrically conductive portion and / or the first electrode and / or the second electrode.

In one embodiment, the first electrically conductive portion may be a region of the first electrode and / or the second electrically conductive portion may be a region of the second electrode.

In one configuration of the method, the organic, optoelectronic component device may be formed with a first contact pad and a second contact pad, wherein the contact pads for electrically contacting the organic, optoelectronic component device are set up and wherein the first electrically conductive portion and / or the first electrode as at least a portion of the first contact pad is / are set up and / or wherein the second electrically conductive portion and / or the second electrode is / are arranged as at least a portion of the second contact pad.

In one embodiment of the method, the electrically conductive portions may be in an overlapping arrangement, i. mutually offset arrangement and / or shifted arrangement are formed to each other, wherein parts of the electrically conductive portions can be formed parallel to each other, for example, at a distance from each other. The electrically conductive sections can also be formed in different planes, for example in the sense of different layers in a cross-sectional view or drawing plane, for example similar to a cross.

In one configuration of the method, the electrically conductive sections may be formed in a complementary shape and / or arrangement with each other, wherein the first electrically conductive section is formed partially and / or completely perpendicular and / or parallel to the second electrically conductive section.

In one embodiment of the method, a parallel arrangement of the electrically conductive sections can be formed, for example, as a partially and / or completely concentric arrangement and / or coaxial arrangement of the electrically conductive sections. The second electrically conductive portion may form the inner electrically conductive portion of a concentric array of electrically conductive portions, wherein the interior of the second electrically conductive portion may be, for example, hollow or, for example, may comprise an electrically insulating material, or for example the same, a similar or other electrically conductive material such as or as the first electrically conductive portion.

The electrically conductive portions may be formed, for example, in a planar shape and / or a tapered shape. A Surface of electrically conductive portions may be formed, for example, similar to a pin or pin or formed like a planar plane. For example, electrically conductive portions having planar shapes may be formed similar to a pin or similar to a planar plane. For example, electrically conductive portions having a tapered shape may be formed similar to a peak or like a curve.

In one embodiment of the method, the overvoltage protection structure can be formed as a varistor, wherein the varistor is formed electrically parallel to the organic optoelectronic component.

In one embodiment of the method, the varistor can be formed on one of the surfaces of the organic, optoelectronic component.

In one embodiment of the method, the varistor can be partially or completely formed by layers of the organic, optoelectronic component. This type of embodiment can also be understood as forming a varistor in the interior of the organic, optoelectronic component.

In one embodiment of the method, the varistor can be formed in the interior of the organic, optoelectronic component such that the varistor is electrically insulated with respect to further layers of the organic, optoelectronic component.

In one embodiment of the method, the overvoltage protection structure can be formed as a protective diode, wherein the protective diode is formed electrically parallel to the organic optoelectronic component.

In one embodiment, the protection diode can be designed such that the response voltage of the protective diode in the reverse direction of the organic, optoelectronic component is smaller than the breakdown voltage of the organic, optoelectronic component in the reverse direction, for example with respect to a voltage pulse occurring at the organic optoelectronic device in the reverse direction.

In one embodiment of the method, the overvoltage protection structure can be formed as a spark gap, wherein the spark gap is formed electrically parallel to the organic optoelectronic component.

In one embodiment of the method, the common layer can be patterned, for example in order to at least partially form the overvoltage protection structure, for example to form the first electrically conductive section and the second electrically conductive section from the layer of one of the electrodes of the organic, optoelectronic component.

In one embodiment of the method, the common layer can have at least one electrode of the organic, optoelectronic component and at least one electrically conductive section of the overvoltage protection structure or be formed as such.

In one embodiment of the method, the overvoltage protection structure can be formed next to the organic, optoelectronic component.

In one embodiment of the method, the overvoltage protection structure can be formed on or above the organic, optoelectronic component.

In one embodiment of the method, the organic, optoelectronic component can be formed on or above the overvoltage protection structure.

In one embodiment of the method, the overvoltage protection structure can be formed as a structured region of the organic, optoelectronic component.

In one configuration of the method, the organic, optoelectronic component device may have an optically active region and an optically inactive region, wherein the overvoltage protection structure is formed in the optically inactive region.

In one configuration of the method, the overvoltage protection structure can be formed in the geometric edge region of the organic, optoelectronic component, for example in the edge region in the interior of the organic, optoelectronic component or on or above the organic, optoelectronic component.

In one embodiment of the method, the overvoltage protection structure can be exposed on a surface of the organic, optoelectronic component, surrounded by an electrically insulating layer or an electrically conductive layer.

In one embodiment of the method, at least part of the overvoltage protection Structure are formed on the first contact pad and / or the second contact pad, for example as a varistor bridge. In various embodiments of the method, the overvoltage protection structure may be formed as a configuration of one or more spark gap (s), protection diode (s) and / or varistor (s), which may be electrically connected in series or in parallel with each other.

In one embodiment of the method, an overvoltage protection structure may be formed such that it has at least two protective diodes which are electrically parallel or arranged in series with one another, wherein the overvoltage protection structure is formed electrically parallel or in series with the organic optoelectronic component.

In one configuration of the method, an overvoltage protection structure may be designed such that the overvoltage protection structure has at least two protective diodes in parallel to the organic optoelectronic component, which are connected in series with one another and whose forward direction is opposite. For example, the protection diodes may be formed to have an amount of the response voltage of about 0.6 V and, for example, an amount of the breakdown voltage in a range of about 4 V to about 15 V. The value of the breakdown voltage may be dependent on the configuration of the organic optoelectronic component and, for example, have a value in a range of approximately 4 V to approximately 1000 V.

In various embodiments of the method, a protection diode may be formed such that the protection diode has a configuration of two or more pn junctions, i. Diodes, for example, in a series connection or parallel connection, for example in a unidirectional or a bidirectional configuration.

In one embodiment of the method, a protection diode may be formed such that it has a suppressor diode in a unidirectional or bidirectional configuration.

The protection diode described below can be formed in different embodiments of the method electrically in parallel or in series with the organic optoelectronic device.

In one embodiment of the method, the organic, optoelectronic component device can be designed such that the response time of the protective diode is smaller than the response time of the organic, optoelectronic component.

In one embodiment of the method, the protective diode may be formed with at least one hole-conducting layer and at least one electron-conducting layer such that at least one hole-conducting layer has physical contact with at least one electron-conducting layer; and at least one hole-conducting layer is electrically connected to the first electrically conductive portion and at least one electron-conducting layer is electrically connected to the second electrically-conductive portion. At a common interface of the at least one electron-conducting layer with the at least one hole-conducting layer charge carrier pairs can be generated.

In one embodiment of the method, at least one electron-conducting layer having a layer thickness in a range from approximately 1 nm to approximately 500 nm can be formed.

In one embodiment of the method, at least one hole-conducting layer having a layer thickness in a range from approximately 1 nm to approximately 500 nm can be formed.

In one embodiment of the method, the substance or the substance mixture of at least one electron-conducting layer and / or the hole-conducting layer can have a transmission greater than approximately 90% in a wavelength range from approximately 450 nm to approximately 650 nm.

In one embodiment of the method, the substance or the substance mixture of a hole-conducting layer may have a valence band approximately equal to the conduction band of the substance or of the substance mixture of the electron-conducting layer with which the hole-conducting layer is in physical contact.

In one embodiment of the method, the at least one electron-conducting layer and / or the at least one hole-conducting layer may comprise or be formed from a mixture of a matrix and a dopant. A substance mixture of matrix and dopant can be formed for example by means of co-evaporation of the substances of the matrix and the doping on or via a substrate.

In one embodiment of the method, the at least one hole-conducting layer can have or be formed from an intrinsically hole-conducting substance.

In one configuration of the method, the at least one hole-conducting layer, one of the intrinsically hole-conducting substances of a configuration of the intrinsically hole-conducting layer of the optoelectronic component (see above) can have or be formed from it.

In one embodiment of the method, the at least one hole-conducting layer can be formed from a mixture of matrix and p-type dopant.

In one embodiment of the method, the matrix of the at least one hole-conducting layer may comprise or be formed from one of the substances of an embodiment of the matrix of the at least one hole-conducting layer of the optoelectronic component (see above).

In one configuration of the method, the dopant of the at least one hole-conducting layer may comprise or be formed from one of the substances of an embodiment of the dopant of the at least one hole-conducting layer of the optoelectronic component (see above).

In one embodiment of the method, the p-type dopant may have a mass fraction relative to the at least one electron-conducting layer in a range of about 0.1% to about 10%, for example in a range of about 1% to about 2%.

In one embodiment of the method, the at least one electron-conducting layer may comprise or be formed from an intrinsically electron-conducting substance.

In one embodiment of the method, the intrinsic electron-conducting layer may comprise or be formed from one of the substances of one embodiment of the intrinsically electron-conducting layer of the optoelectronic component (see above).

In one embodiment of the method, the at least one electron-conducting layer can be formed from a mixture of matrix and n-dopant.

In one embodiment of the method, the matrix of the at least one electron-conducting layer may include or be formed from one of the substances of an embodiment of the matrix of the at least one electron-conducting layer of the optoelectronic component (see above).

In one configuration of the method, the n-type dopant of the at least one electron-conducting layer may comprise or be formed from one of the substances of a configuration of the at least one electron-conducting layer of the optoelectronic component (see above).

In one embodiment of the method, the n-type dopant may have a mass fraction with respect to the at least one hole-conducting layer in a range of about 0.1% to about 10%, for example in a range of about 1% to about 2%.

In one configuration of the method, the n-dopant may have a higher or a lower mass fraction of the at least one electron-conducting layer of matrix and n-dopant than the p-dopant on the hole-conducting layer of matrix and p-dopant. In other words, the at least one hole-conducting layer and the at least one electron-conducting layer can be asymmetrically doped.

In one embodiment of the method, the varistor can have or be formed from a carrier matrix and at least one material which has varistor properties, the material having varistor properties being embedded in the carrier matrix.

In one embodiment of the method, the material of the carrier matrix can be set up such that the varistor has dimensional stability after the formation of the varistor, i. the viscosity and modulus of elasticity of the carrier matrix does not change by heat and / or electromagnetic radiation such that the carrier matrix is moldable, i. becomes liquid and or plastically deformable. In other words, the material of the carrier matrix of the varistor can be or be set up such that the varistor has dimensional stability during operation of the organic, optoelectronic component.

In one embodiment of the method, the carrier matrix of the varistor may comprise or be formed from an electrically insulating material.

In one embodiment of the method, the carrier matrix of the varistor may comprise or form as the material one of the following substances: a crosslinked, electrically nonconductive polymer, for example an elastomer, an epoxide, a silicone or a silazane.

In one embodiment of the method, the at least one material having varistor properties can comprise or be formed from one of the following substances or a stoichiometric compound thereof: silicon carbide, a metal oxide, for example a zinc oxide, bismuth oxide, chromium oxide, manganese oxide or cobalt oxide.

In one embodiment of the method, the at least one material having varistor characteristics of the varistor may be formed in the form of a plurality of particles in the carrier matrix of the varistor, wherein the particles may be, for example, an arbitrary, i. random shape, such as flakes (flakes) or may have a spherical shape.

In one embodiment of the method, at least two particles with varistor properties can have different materials with varistor properties, for example a varistor has at least one zinc oxide particle and at least one silicon carbide particle or one zinc oxide particle and one zinc oxide particle with another material, for example with Varistor properties, such as silicon carbide or other material, such as aluminum.

In one embodiment of the method, the two particles with different materials may have the varistor properties, such that an electric field is formed at the interfaces of the particles having varistor properties, i. it can come to form a space charge zone.

In an embodiment of the method, the particles having varistor properties can be arranged in the carrier matrix of the varistor in such a way that an electrically continuous connection of material with varistor properties is formed by the carrier matrix, whereby a carrier matrix with conductive particles, a conductive carrier matrix and / or a conductive layer can connect.

An electrically continuous coherent connection of the particles with varistor properties can be understood as an electrical connection parallel to the current direction of the organic, optoelectronic component. What is essential here is an electrically continuous connection to particles with varistor properties in the carrier matrix of the varistor, electrically connected in parallel with the organic, optoelectronic component, the response voltage of this continuously connected connection being above the threshold voltage of the organic, optoelectronic component and below the breakdown voltage of the organic, optoelectronic component is trained. The contiguous connection may be arbitrary, i. Random, path (random walk) or directional, approximately linear path.

In one embodiment, the particles with varistor properties can be arranged parallel to the current flow direction of the organic, optoelectronic component in the carrier matrix such that the response voltage of the varistor is greater than a first voltage value and less than a second voltage value.

In one embodiment of the method, the first voltage value may have approximately the value of the response voltage of the organic, optoelectronic component, i. the varistor has a response voltage up to which the organic, optoelectronic component can work regularly. The varistor should be designed such that the response voltage is formed at least above the threshold voltage of the organic, optoelectronic component, since a varistor has no reverse direction, i. point-symmetric with respect to polarity reversal works. The varistor may have the highest possible resistance below the response voltage, for example in a range from approximately 50 kΩ to approximately 50 MΩ or a low current flow, for example in a range from approximately 0.1 μA to approximately 10 μA.

In one embodiment of the method, the varistor can be formed such that the second voltage value has an amount smaller than the breakdown voltage of the organic, optoelectronic component and / or be smaller than the voltage at which irreversible damage occurs in the organic, optoelectronic component , The second voltage value of the varistor may be dependent on the configuration of the organic optoelectronic component, since the magnitude of the breakdown voltage of the organic, optoelectronic component is dependent on the design of the organic, optoelectronic component. For example, the second voltage value of the varistor may have an amount ranging from about 4 V to about 200 V, for example greater than about 4 V, for example greater than about 8 V, for example greater than about 16 V. In one embodiment of the method, the varistor may be formed such that the material of the carrier matrix and the material having varistor characteristics have an approximately equal thermal expansion, i. the carrier matrix compensates for the expansion of the waste heat of the particles with varistor properties which is produced by means of an electrical current, wherein the heat can also be supplied or removed via the electrically conductive sections of the overvoltage protection structure.

In one embodiment, the varistor can be formed such that the varistor partially or completely penetrate or surround one or more layers of the organic, optoelectronic component.

In one embodiment of the method, the overvoltage protection structure can be designed such that a dielectric, for example air, can be formed between the first electrically conductive section and the second electrically conductive section. The first electrically conductive portion and the second electrically conductive portion may be arranged relative to each other and arranged relative to each other, that from a voltage applied across the first electrically conductive portion and the second electrically conductive portion Ansprechspannung, a spark gap between the first electrically conductive portion and the second electrically conductive portion is formed; wherein the response voltage as value has an amount which is greater than the magnitude of the threshold voltage of the organic, optoelectronic component and less than the magnitude of the breakdown voltage of the organic, optoelectronic component and / or be less than the voltage at which it is in the organic , Optoelectronic device comes to irreversible damage. The second voltage value of the spark gap may be dependent on the design of the organic optoelectronic component, since the amount of the breakdown voltage of the organic, optoelectronic component is dependent on the configuration of the organic, optoelectronic component. For example, the second voltage value of the spark gap may have an amount ranging from about 4 V to about 200 V, for example greater than about 4 V, for example greater than about 8 V, for example greater than about 16 V.

In one configuration of the method, the dielectric between the first electrically conductive section and the second electrically conductive section may comprise or be formed from one of the following materials: an electrically insulating, crosslinkable organic and / or inorganic compound, for example an epoxy resin, a silicone or a ceramics.

In one configuration of the method, the dielectric between the first electrically conductive section and the second electrically conductive section may comprise or be formed from a vacuum or a gas: for example air, oxygen, carbon dioxide, nitrogen, ozone or a noble gas.

In one embodiment of the method, the first electrically conductive portion may be formed, for example, complementary, perpendicular, parallel, concentric or divergent aligned relative to the second electrically conductive portion. A divergent orientation of the electrically conductive sections can be set up, for example, as a horn bow and / or Jacob's ladder.

In one configuration of the method, the surface of the first electrically conductive section and / or the surface of the second electrically conductive section between which the spark gap is formed may have a surface geometry of the following geometric shapes: flat, round, rough, pointed, and / or complementary to each other.

The geometric shapes can be set up regularly such that they have a geometric axis of symmetry, wherein the symmetry axis can become a mirror symmetry and / or additionally a rotational symmetry.

In one embodiment of the method, the smallest distance of the first electrically conductive portion from the second electrically conductive portion, between which forms the spark gap, have a value in a range of about 1 micron to about 100 microns.

In one configuration of the method, the first electrically conductive section and the second electrically conductive section can be surrounded by an encapsulation, for example encased in a cavity, become part of a sectional plane of a support of the optoelectronic component, or be surrounded by a potting material which, for example, a having electrically insulating, crosslinkable organic and / or inorganic compound, for example an epoxy resin or a silicone.

The encapsulant may be formed as a mechanical protection for the electrically conductive portions such that the distance between the surfaces of the electrically conductive portions and the shape of the surfaces of the electrically conductive portions with respect to external force effects, such as a shock, impact, camber or bending before Changes, such as increasing or decreasing the distance or deforming the surface of the electrically conductive portions are protected.

In one embodiment of the method, the encapsulation can be set up such that the dielectric, for example air, is protected against environmental influences, for example a change in the atmospheric humidity and / or an irradiation of ionizing radiation, for example UV radiation or X-radiation. These environmental influences could change the necessary voltage which should be present across the electrically conductive sections such that the formation of a spark gap at a value of the applied voltage can be formed, which takes place below the threshold voltage of the organic, optoelectronic device to be protected or above the breakdown voltage of the organic, optoelectronic device to be protected and so can affect the function of the device to be protected or the ESD protection.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1a -D schematic circuit diagrams of an organic, optoelectronic component device, according to various embodiments;

2 a schematic cross-sectional view of an organic, optoelectronic device, according to various embodiments;

3 a schematic cross-sectional view of an organic, optoelectronic component device, according to various embodiments;

4a , b are schematic views of an overvoltage protection structure of an organic, optoelectronic component device, according to various embodiments;

5a , b are schematic views of an overvoltage protection structure of an organic, optoelectronic component device, according to various embodiments;

6a C shows a region of the organic, optoelectronic component device in the method for producing an overvoltage protection structure, according to various embodiments; and

7 shows a schematic plan view of a varistor, according to various application examples.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

1a -D show schematic circuit diagrams of an organic, optoelectronic component device, according to various embodiments.

The radiation-providing and -absorbing layers of the organic, optoelectronic component 106 may have pn junctions that provide or receive radiation but have a low reverse blocking voltage. As a result, these layers may be sensitive to a reverse breakdown or generally formulated: with respect to an overvoltage caused, for example, by a reverse polarity or an electrostatic discharge.

Instead of an external overvoltage protection structure for overvoltage protection of the organic, optoelectronic component 106 , the overvoltage protection structure is built in various embodiments directly in the organic, optoelectronic device. This can be done, for example, by using, structuring and / or stacking suitable substances and / or layers of the organic, optoelectronic component 106 will be realized. The pn junction of the protection diode 108 For example, it can be steamed, printed and patterned.

In various embodiments, in addition to the radiation-providing and -absorbing layers of the organic, optoelectronic component 106 on or above the support of the organic, optoelectronic component 106 , at least one protection diode 108 be formed, ie pn junctions, which have a pure diode action with high reverse blocking voltage and low forward voltage. In other words, in various embodiments, an overvoltage protection structure may be used as a protection diode 108 be formed (shown in 1a and 1b ). In various embodiments, a protection diode 108 as a suppressor diode 108 (Transient Absorption Zener Diode - TAZ Diode or Transient Voltage Suppressor Diode - TVS Diode) a zener diode 108 or a Schottky diode (shown) may be formed. A protection diode 108 Can also be used as an anti-kick back diode 108 , a reverse bias diode 108 , a flyback diode 108 or a snubbing diode 108 be designated. In various embodiments, a protection diode may have a configuration of two or more of the diodes described above, for example, in series or parallel, for example, in a unidirectional or bidirectional configuration. For example, in various embodiments, a protection diode may include a suppressor diode in a unidirectional or bidirectional configuration.

The organic, optoelectronic component 106 can as a planar organic, optoelectronic device 106 be formed, for example, an OLED 106 or a solar cell 106 ,

The organic, optoelectronic component 106 and the protection diode 108 have common connection structures 102 . 104 for electrical contact, for example, common contact pads 102 . 104 , where the contact pads 102 . 104 may be formed on the carrier or the operating device of the OLED (shown).

The protective diode 108 may be at least partially adjacent, above and / or below the radiation-providing and -absorbing layers of the organic optoelectronic device 106 be educated.

The protective diode 108 can be connected in series with respect to the organic, optoelectronic component in series - shown in 1a (see also 5 ), or parallel - shown in 1b (see also 4 ).

The series connected protective diode 108 should be designed such that it has a high reverse voltage resistance, for example, a breakdown voltage greater than about 600 V. As a result, a current flow and destruction of the organic, optoelectronic component 106 be prevented.

In various embodiments, the overvoltage protection structure may be a varistor 112 be educated - represented in 1c (see also 7 ) - and electrically parallel to the organic, optoelectronic device 106 be educated. When an overvoltage is applied to the circuit 120 can the varistor 112 become electrically conductive and the organic, optoelectronic device 106 electrically bridge for the duration of the overvoltage.

In various embodiments, the overvoltage protection structure may be used as a spark gap 114 be educated - represented in 1d (see also 6c ) - and electrically parallel to the organic, optoelectronic device 106 be educated. When an overvoltage is applied to the circuit 130 may spark gap between the first electrically conductive portion and the second electrically conductive portion of the overvoltage protection structure 114 be formed, whereby the organic, optoelectronic component 106 is electrically bridged for the duration of the overvoltage.

2 shows a schematic cross-sectional view of an organic, optoelectronic device, according to various embodiments.

The optoelectronic component 106 For example, an electronic component providing electromagnetic radiation 106 , For example, a light-emitting device 106 , For example, in the form of an organic light emitting diode 106 can be a carrier 202 exhibit. The carrier 202 For example, it can serve as a support element for electronic elements or layers, for example light-emitting elements. For example, the carrier 202 Glass, quartz, and / or a semiconductor material or any other suitable substance or be formed therefrom. Furthermore, the carrier can 202 comprise or be formed from a plastic film or a laminate with one or more plastic films. The plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP). Further, the plastic may include or include polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES), and / or polyethylene naphthalate (PEN) be formed. The carrier 202 may comprise one or more of the above substances. The carrier 202 may include or be formed from a metal or metal compound, for example copper, silver, gold, platinum or the like. A carrier 202 Having a metal or a metal compound may also be formed as a metal foil or a metal-coated foil. The carrier 202 can be translucent or even transparent.

The term "translucent" or "translucent layer" can be understood in various embodiments that a layer is permeable to light, for example for the light generated by the light emitting device, for example, one or more wavelength ranges, for example, for light in a wavelength range of visible light (for example, at least in a partial region of the wavelength range of 380 nm to 780 nm). By way of example, the term "translucent layer" in various exemplary embodiments is to be understood as meaning that essentially the entire amount of light coupled into a structure (for example a layer) is also coupled out of the structure (for example layer), in which case a portion of the light can be scattered

In various embodiments, the term "transparent" or "transparent layer" can be understood as meaning that a layer is permeable to light (for example at least in a subregion of the wavelength range from 380 nm to 780 nm), wherein a structure (for example a layer) coupled-in light is also coupled out without any scattering or light conversion from the structure (for example, layer). Thus, "transparent" in various embodiments is to be regarded as a special case of "translucent".

In the event, for example, that a light-emitting monochrome or emission-limited electronic component is to be provided, it is sufficient for the optically translucent layer structure to be translucent at least in a partial region of the wavelength range of the desired monochromatic light or for the limited emission spectrum.

In various embodiments, the organic light emitting diode 106 (or the light emitting devices according to the embodiments described above or below) may be configured as a so-called top and bottom emitter. A top and / or bottom emitter can also be referred to as an optically transparent component, for example a transparent organic light-emitting diode.

On or above the vehicle 202 Optionally, in various embodiments, a barrier layer 204 be arranged. The barrier layer 204 It may comprise or consist of one or more of the following: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, mixtures and alloys thereof. Furthermore, the barrier layer 204 in various embodiments have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 5000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example, a layer thickness of about 40 nm.

On or above the barrier layer 204 can be an electrically active area 206 of the light emitting device 106 be arranged. The electrically active area 206 can be considered the area of the light-emitting device 106 be understood, in which an electric current for operation of the light-emitting device 106 flows. In various embodiments, the electrically active region 206 a first electrode 210 , a second electrode 214 and an organic functional layer structure 212 have, as will be explained in more detail below.

Thus, in various embodiments, on or above the barrier layer 204 (or, if the barrier layer 204 is absent, on or above the vehicle 202 ) the first electrode 210 (For example in the form of a first electrode layer 210 ) be applied. The first electrode 210 (hereinafter also referred to as lower electrode 210 may be formed of an electrically conductive substance or be, such as a metal or a conductive transparent oxide (TCO) or a stack of layers of the same metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent, conductive substances, for example metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds such as ZnO, SnO ₂ , or In ₂ O _{3 also} include ternary metal oxygen compounds such as AlZnO, Zn ₂ SnO ₄ , CdSnO ₃ , ZnSnO ₃ , MgIn ₂ O ₄ , GaInO ₃ , Zn ₂ In ₂ O ₅ or In ₄ Sn ₃ O ₁₂ or mixtures of different transparent conductive oxides to the group of TCOs and can be used in various embodiments. Furthermore, the TCOs do not necessarily correspond to a stoichiometric composition and may also be p-doped or n-doped.

In various embodiments, the first electrode 210 have a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Ag, Au, Mg, Ca, Sm or Li, and compounds, combinations or alloys of these substances.

In various embodiments, the first electrode 210 are formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

In various embodiments, the first electrode 210 have one or more of the following substances as an alternative or in addition to the above-mentioned substances: networks of metallic nanowires and particles, for example of Ag; Networks of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.

Furthermore, the first electrode 210 having electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.

In various embodiments, the first electrode 210 and the carrier 202 be formed translucent or transparent. In the case that the first electrode 210 comprises or is formed of a metal, the first electrode 210 For example, have a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 18 nm 210 For example, have a layer thickness of greater than or equal to about 10 nm, for example, a layer thickness of greater than or equal to about 15 nm. In various embodiments, the first electrode 210 a layer thickness in a range of about 10 nm to about 25 nm, for example, a layer thickness in a range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.

Furthermore, in the event that the first electrode 210 has a conductive transparent oxide (TCO) or is formed therefrom, the first electrode 210 For example, a layer thickness in a range of about 50 nm to about 500 nm, for example, a layer thickness in a range of about 75 nm to about 250 nm, for example, a layer thickness in a range of about 100 nm to about 150 nm.

Furthermore, in the event that the first electrode 210 For example, from a network of metallic nanowires, such as Ag, which may be combined with conductive polymers, a network of carbon nanotubes that may be combined with conductive polymers, or formed from graphene layers and composites, the first electrode 210 For example, a layer thickness in a range of about 1 nm to about 500 nm, for example, a layer thickness in a range of about 10 nm to about 400 nm, for example, a layer thickness in a range of about 40 nm to about 250 nm.

The first electrode 210 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.

The first electrode 210 may comprise a first electrical contact pad, to which a first electrical potential (provided by a power source (not shown), for example a current source or a voltage source) can be applied. Alternatively, the first electrical potential to the carrier 202 be created or be and then then indirectly to the first electrode 210 be created or be. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

Furthermore, the electrically active region 206 of the light emitting device 106 an organic functional layer structure 212 which are on or above the first electrode 210 is applied or trained.

The organic functional layer structure 212 can be one or more emitter layers 218 have, for example, with fluorescent and / or phosphorescent emitters, and one or more Lochleitungsschichten 216 (also referred to as hole transport layer (s) 220 ). In various embodiments, alternatively or additionally, one or more electron conduction layers may be used 216 (also referred to as electron transport layer (s)) 216 ) be provided.

Examples of emitter materials used in the light-emitting device 106 according to various embodiments for the emitter layer (s) 218 can be used include organic or organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or 2,5-substituted poly-p-phenylenevinylene) as well as metal complexes, for example iridium complexes such as blue phosphorescent FIrPic (Bis (3, 5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) -iridium III), green phosphorescent Ir (ppy) ₃ (tris (2-phenylpyridine) iridium III), red phosphorescent Ru (dtb-bpy) ₃ 2 (PF ₆ ) (tris [4,4'-di-tert-butyl- (2,2 ') -bipyridine] ruthenium (III) complex) and blue fluorescent DPAVBi (4,4-bis [4- (di -p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9,10-bis [N, N-di- (p-tolyl) -amino] anthracene) and red fluorescent DCM2 (4-dicyanomethylene) -2-methyl-6-ylolidyl-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, it is possible to use polymer emitters which can be deposited in particular by means of a wet-chemical method, for example a spin-coating method (also referred to as spin coating).

The emitter materials may be suitably embedded in a matrix material.

It should be noted that other suitable emitter materials are also provided in other embodiments.

The emitter materials of the emitter layer (s) 218 of the light emitting device 106 For example, may be selected so that the light-emitting device 106 White light emitted. The emitter layer (s) 218 can have several different colored (for example blue and yellow or blue, green and red) emitting emitter materials, alternatively, the emitter layer (s) can / 218 also be composed of several sub-layers, such as a blue fluorescent emitter layer 218 or blue phosphorescent emitter layer 218 , a green phosphorescent emitter layer 218 and a red phosphorescent emitter layer 218 , By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary Radiation produces a white color impression.

The organic functional layer structure 212 may generally comprise one or more electroluminescent layers. The one or more electroluminescent layers may or may comprise organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules") or a combination of these substances. For example, the organic functional layer structure 212 have one or more electroluminescent layers as the hole transport layer 220 is designed or are, so that, for example, in the case of an OLED an effective hole injection into an electroluminescent layer or an electroluminescent region is made possible. Alternatively, in various embodiments, the organic functional layer structure 212 have one or more functional layers that serve as an electron transport layer 216 is executed or are, so that, for example, in an OLED effective electron injection into an electroluminescent layer or an electroluminescent region is made possible. As a substance for the hole transport layer 220 For example, tertiary amines, carbazo derivatives, conductive polyaniline or polythylenedioxythiophene can be used. In various embodiments, the one or more electroluminescent layers may be embodied as an electroluminescent layer.

In various embodiments, the hole transport layer 220 on or above the first electrode 210 deposited, for example, be deposited, and the emitter layer 218 can be on or above the hole transport layer 220 be deposited, for example, be deposited. In various embodiments, you may electron transport layer 216 on or above the emitter layer 218 applied, for example, be deposited.

In various embodiments, the organic functional layer structure 212 (ie, for example, the sum of the thicknesses of hole transport layer (s) 220 and emitter layer (s) 218 and electron transport layer (s) 216 ) have a layer thickness of at most approximately 1.5 μm, for example a layer thickness of at most approximately 1.2 μm, for example a layer thickness of approximately approximately 1 μm, for example a layer thickness of approximately approximately 800 nm, for example a layer thickness of approximately approximately 500 nm, For example, a layer thickness of at most about 400 nm, for example, a layer thickness of at most about 300 nm. In various embodiments, the organic functional layer structure 212 For example, a stack of a plurality of directly superimposed organic light-emitting diodes (OLEDs), each OLED may have, for example, a layer thickness of at most about 1.5 microns, for example, a layer thickness of about 1.2 microns, for example, a layer thickness of at most about 1 micron , for example a layer thickness of at most approximately 800 nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of approximately approximately 400 nm, for example a layer thickness of approximately approximately 300 nm. In various embodiments, the organic functional layer structure 212 For example, have a stack of two, three or four directly superimposed OLEDs, in which case, for example, organic functional layer structure 212 may have a layer thickness of at most about 3 microns.

The light emitting device 106 Optionally, further organic functional layers, for example arranged on or over the one or more emitter layers, can be optionally used 218 or on or above the electron transport layer (s) 216 which serve the functionality and thus the efficiency of the light-emitting device 106 continue to improve.

On or above the organic functional layer structure 212 or optionally on or over the one or more further organic functional layer structures, the second electrode 214 (For example in the form of a second electrode layer 214 ) be applied.

In various embodiments, the second electrode 214 have the same substances or be formed from it as the first electrode 210 , wherein in various embodiments, metals are particularly suitable.

In various embodiments, the second electrode 214 (For example, in the case of a metallic second electrode 214 ), for example a layer thickness of less than or equal to about 45 nm, for example a layer thickness of less than or equal to about 40 nm, for example a layer thickness of less than or equal to about 35 nm, for example a layer thickness of less than or equal to about 30 nm, for example, a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm ,

The second electrode 214 may generally be formed or be similar to the first electrode 210 , or different from this. The second electrode 214 may be formed in various embodiments of one or more of the substances and with the respective layer thickness or be, as above in connection with the first electrode 210 described. In various embodiments, the first electrode 210 and the second electrode 214 both translucent or transparent. Thus, the in 1 illustrated light emitting device 106 as a top and bottom emitter (in other words as a transparent light-emitting component 106 ) be formed.

The second electrode 214 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.

The second electrode 214 may comprise a second electrical connection to which a second electrical potential (which is different from the first electrical potential) provided by the energy source, can be applied. For example, the second electrical potential may have a value such that the difference from the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V.

On or above the second electrode 214 and thus on or above the electrically active area 206 Optionally, an encapsulation 208 , for example in the form of a barrier thin layer / thin-layer encapsulation 208 be formed or be.

Under a "barrier thin film" 208 or an "arriere thin film" 208 In the context of this application, for example, a layer or a layer structure can be understood which is suitable for forming a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture) and oxygen. In other words, the barrier thin film 208 designed such that it can not be penetrated by OLED-damaging substances such as water, oxygen or solvent or at most very small proportions.

According to one embodiment, the barrier thin film 208 be formed as a single layer (in other words, as a single layer). According to an alternative embodiment, the barrier thin layer 208 have a plurality of sub-layers formed on each other. In other words, according to an embodiment, the barrier thin film 208 be formed as a layer stack (stack). The barrier thin film 208 or one or more sublayers of the barrier film 208 can be formed, for example, by means of a suitable deposition method, eg by means of an atomic layer deposition (ALD) method according to one embodiment, eg a plasma-enhanced atomic layer deposition method (PEALD) or a plasma-less atomic layer deposition method (plasma-less atomic layer deposition (PLALD)), or by means of a chemical vapor deposition (CVD) method according to another embodiment, for example a plasma enhanced chemical vapor deposition (PECVD) method or a plasma-less chemical vapor deposition method (PLCVD )), or alternatively by other suitable deposition methods.

By using an atomic layer deposition process (ALD) very thin layers can be deposited. In particular, layers can be deposited whose layer thicknesses are in the atomic layer region.

According to one embodiment, in the case of a barrier thin film 208 having multiple sublayers, all sublayers are formed by an atomic layer deposition process. A layer sequence comprising only ALD layers may also be referred to as "nanolaminate".

According to an alternative embodiment, in the case of a barrier thin layer 208 comprising a plurality of sublayers, one or more sublayers of the barrier film 208 be deposited by a deposition method other than an atomic layer deposition method, for example, by a vapor deposition method.

The barrier thin film 208 According to one embodiment, it may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example a layer thickness of about 10 nm to about 100 nm according to an embodiment, for example about 40 nm according to an embodiment.

According to an embodiment, in which the barrier thin film 208 has multiple sub-layers, all sub-layers may have the same layer thickness. According to another embodiment, the individual partial layers of the barrier thin layer 208 have different layer thicknesses. In other words, at least one of the partial layers may have a different layer thickness than one or more other of the partial layers.

The barrier thin film 208 or the individual partial layers of the barrier thin film 208 may be formed according to an embodiment as a translucent or transparent layer.

In other words, the barrier thin film 208 (or the individual sublayers of the barrier thin film 208 ) consist of a translucent or transparent substance (or a mixture of substances that is translucent or transparent).

According to one embodiment, the barrier thin film 208 or (in the case of a layer stack having a plurality of sublayers) one or more of the sublayers of the barrier film 208 aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, and mixtures and alloys thereof. In various embodiments, the barrier thin film 208 or (in the case of a layer stack having a plurality of sublayers) one or more of the sublayers of the barrier film 208 one or more high-index substances, in other words one or more substances with a high refractive index, for example with a refractive index of at least 2.

In one embodiment, the cover 226 glass, for example by means of a frit bonding / glass soldering / seal glass bonding using a conventional glass solder in the geometric edge regions of the organic optoelectronic component 106 with the barrier thin film 208 be applied.

In various embodiments, on or above the barrier film 208 an adhesive and / or a protective varnish 224 be provided by means of which, for example, a cover 226 (For example, a glass cover 226 , a metal foil cover 226 , a sealed plastic film cover 226 ) on the barrier thin film 208 attached, for example, is glued. In various embodiments, the optically translucent layer of adhesive and / or protective lacquer 224 have a layer thickness of greater than 1 micron, for example, a layer thickness of several microns. In various embodiments, the adhesive may include or be a lamination adhesive.

In various embodiments, light-scattering particles which can lead to a further improvement in the color angle distortion and the coupling-out efficiency can also be embedded in the layer of the adhesive (also referred to as the adhesive layer). In various embodiments, as scattering particles, for example, scattering dielectric particles may be provided, such as metal oxides, e.g. Silicon oxide (SiO 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga 2 Oa) aluminum oxide, or titanium oxide. Other particles may also be suitable, provided that they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate or glass hollow spheres. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles.

In various embodiments, between the second electrode 214 and the layer of adhesive and / or protective lacquer 224 another electrically insulating layer (not shown) or, for example, SiN, for example, having a layer thickness in a range of about 300 nm to about 1.5 μm, for example having a layer thickness in a range of about 500 nm to about 1 μm to protect electrically unstable materials, for example during a wet chemical process.

In various embodiments, the adhesive may be configured such that it itself has a refractive index that is less than the refractive index of the cover 226 , Such an adhesive may, for example, be a low-refractive adhesive such as an acrylate having a refractive index of about 1.3. For example, in one embodiment, an adhesive may be a high refractive index adhesive having, for example, high refractive non-diffusing particles and an average refractive index approximately equal to the average refractive index of the organic functional layer structure, for example, in a range of about 1.7 to about 2.0. Furthermore, a plurality of different adhesives may be provided which form an adhesive layer sequence.

It should also be noted that in various embodiments, it is entirely an adhesive 224 can be omitted, for example in embodiments in which the cover 226 For example, glass, for example, by plasma spraying on the barrier thin film 208 be applied.

In various embodiments, the cover may / may 226 and / or the adhesive 224 have a refractive index (for example at a wavelength of 633 nm) of 1.55.

Furthermore, in various embodiments, additionally one or more antireflection coatings (for example combined with the encapsulation 208 , For example, the barrier thin film 208 ) in the light-emitting device 106 be provided.

3 shows a schematic cross-sectional view of an organic, optoelectronic component device, according to various embodiments.

In the schematic cross-sectional view in FIG 2 is an embodiment of an optoelectronic component according to one of the embodiments of the description of 1 - marked by means of the cutout 106 as a region of an organic optoelectronic device device 300 shown (surge protection structure is not shown).

Shown are: A first electrode 210 on or over a carrier 202 is trained. On or above the first electrode 210 is an organic functional layered structure 212 educated. Over or on the organic functional layer structure 212 is a second electrode 214 educated. The second electrode 214 is by means of an electrical insulation 304 from the first electrode 210 electrically isolated. The second electrode 214 Can with an electrical connection layer 302 be physically and electrically connected. The electrical connection layer 302 can be in the geometric border area of the carrier 202 on or above the vehicle 202 be formed, for example, laterally adjacent to the first electrode 210 , The electrical connection layer 302 is by means of another electrical insulation 304 electrically from the first electrode 210 isolated. On or above the second electrode 214 is a barrier thin film 208 arranged such that the second electrode 214 , the electrical insulations 304 and the organic functional layer structure 212 from the barrier thin film 208 are surrounded, that is in connection with barrier thin film 208 with the carrier 202 are included. The barrier thin film 208 can hermetically seal the enclosed layers with respect to harmful environmental influences. On or above the barrier thin film 208 is an adhesive layer 224 arranged such that the adhesive layer 224 the barrier thin film 208 flat and hermetically sealed against harmful environmental influences. On or above the adhesive layer 224 is a cover 226 arranged. The cover, for example, on the barrier thin film 208 with an adhesive 224 be glued, for example, be laminated.

Approximately the range of the optoelectronic component 106 with organic functional layer structure 212 on or above the vehicle 202 can act as an optically active area 312 be designated. Approximately the range of the optoelectronic component 106 without organic functional layer structure 212 on or above the vehicle 202 can be considered optically inactive area 314 be designated. The optically inactive area 314 For example, it can be flat next to the optically active area 312 be arranged.

An optoelectronic component 106 which is at least translucent, for example transparent, formed, for example, a least translucent carrier 202 , at least translucent electrodes 210 . 214 , an at least translucent, organic functional layer system and an at least translucent barrier thin layer 208 has, for example, two planar, optically active sides - in the schematic cross-sectional view of the top and bottom of the optoelectronic component 106 ,

The optically active area 312 an optoelectronic component 106 However, it can also have only one optically active side and one optically inactive side, for example in the case of an optoelectronic component 106 which is set up as a top emitter or bottom emitter, for example by the second electrode 106 or the barrier thin film 208 is formed reflective for provided electromagnetic radiation.

The carrier 202 , the first electrode 210 , the organic functional layer structure 212 , the second electrode 214 , the barrier thin film 208 , the adhesive layer 224 and the cover 226 For example, according to one of the embodiment of the descriptions 1 be furnished.

The electrical insulations 304 are arranged such that a current flow between two electrically conductive regions, for example, between the first electrode 210 and the second electrode 214 is prevented. The substance or the substance mixture of the electrical insulation can be, for example, a coating or a coating agent, for example a polymer and / or a lacquer. The lacquer may, for example, have a coating material which can be applied in liquid or in powder form, for example comprising or being formed from a polyimide. The electrical insulations 304 can be applied or formed, for example by means of a printing process, for example, structured. The printing method may include, for example, inkjet printing (inkjet printing), screen printing and / or pad printing (pad printing).

The electrical connection layer 302 may be a substance or mixture of substances a substance or a mixture of substances similar to the electrodes 210 . 214 according to one of the embodiments of the descriptions of 1 have or be formed from it.

The optically inactive area 314 can, for example, contact pads 102 . 104 for electrically contacting the organic functional layer structure 212 exhibit. In other words, in the geometric edge region, the optoelectronic component 106 be formed such that contact pads 102 . 104 for electrically contacting the optoelectronic component 106 are formed, for example, by electrically conductive layers, such as electrical connection layers 302 , Electrodes 210 . 214 or similar in the area of the contact pads 102 . 104 at least partially exposed (not shown).

A contact pad 102 . 104 may be electrically and / or physically connected to an electrode 210 . 214 , for example by means of a bonding layer 302 , A contact pad 102 . 104 However, it can also be considered as an area of an electrode 210 . 214 or a tie layer 302 be furnished.

The contact pads 102 . 104 may as a substance or mixture of substances, a substance or a mixture of substances similar to the second electrode 214 according to one of the embodiments of the descriptions of 1 or formed therefrom, for example as a metal layer structure having at least one chromium layer and at least one aluminum layer, for example chromium-aluminum-chromium (Cr-Al-Cr).

4a , b shows schematic views of an overvoltage protection structure of an organic, optoelectronic component device, according to various embodiments.

4a shows a section of a schematic cross-sectional view of an embodiment of an organic, optoelectronic component device 110 with overvoltage protection structure according to the description of 1b , Shown is another area of the organic optoelectronic device device 300 according to one of the embodiments of the description of 3 ,

Shown is a first electrically conductive portion 408 and a second electrically conductive portion 410 the surge protection structure 110 on or above the vehicle 202 the organic, optoelectronic component device 300 ,

The first electrically conductive section 408 For example, with the anode 102 and the second electrically conductive portion 410 with the cathode 104 the organic, optoelectronic component device 300 be electrically connected, ie the first electrode 210 of the organic, optoelectronic component 106 is with the anode 102 the organic, optoelectronic component device electrically connected and the second electrode 214 with the cathode 104 the organic, optoelectronic component device - shown as a schematic equivalent circuit diagram in 4b ,

On or above the first electrically conductive section 408 can be an electron-conducting layer 404 the surge protection structure 108 be educated. For example, be printed, sprayed or deposited. The electron-conducting layer 404 may comprise an intrinsically electron-conducting substance or a mixture of carrier matrix and n-type dopant.

On or above the electron-conducting layer 404 can be a hole-conducting layer 406 the surge protection structure 108 be formed, for example, printed, sprayed or be isolated. The hole-conducting layer 406 may comprise an intrinsically hole-conducting substance or a mixture of carrier matrix and p-type dopant.

On or above the hole-conducting layer 406 may be a second electrical connection layer 402 be formed, for example, be printed, sprayed or deposited. The second electrical connection layer 402 may, for example, be similar or equal to the first electrode 210 , the second electrode 214 , the first electrical connection layer 302 , the first electrically conductive section 408 or the second electrically conductive portion 410 be educated.

The second electrical connection layer 402 can be electrically connected to the second electrically conductive section 410 be connected and with respect to the first electrically conductive portion 408 be electrically isolated, for example by means of electrical insulation 412 ,

The electrical insulations 412 For example, similar to one of the embodiments of electrical insulation 304 according to the description of 3 be or be trained.

The protective diode 108 For example, in the optically inactive region 314 be formed of the organic, optoelectronic component device.

5a , b shows schematic views of an overvoltage protection structure of an organic, optoelectronic component device, according to various embodiments.

5a shows a section of a schematic cross-sectional view of an embodiment of an organic, optoelectronic component device 100 with overvoltage protection structure according to the description of 1a , Shown is another area of the organic optoelectronic device device 300 according to one of the embodiments of the description of 3 ,

Shown is a first electrically conductive portion 502 and a second electrically conductive portion 504 the surge protection structure 100 on or above the vehicle 202 the organic, optoelectronic component device 300 ,

The first electrically conductive section 502 For example, with the anode 102 the organic, optoelectronic component device 300 and the second electrically conductive portion 504 with the anode of the organic, optoelectronic component 106 be electrically connected, ie the first electrode 210 of the organic, optoelectronic component 106 is with the cathode 504 the protection diode electrically connected and the second electrode 214 with the cathode 104 the organic, optoelectronic component device 300 - Shown as a schematic equivalent circuit diagram in 5b ,

On or above the first electrically conductive section 502 can be a hole-conducting layer 406 the surge protection structure 108 be educated. For example, be printed, sprayed or deposited. The hole-conducting layer 406 may comprise an intrinsically hole-conducting substance or a mixture of carrier matrix and p-type dopant.

On or above the hole-conducting layer 406 can be an electron-conducting layer 404 the surge protection structure 108 be formed, for example, be printed, sprayed or deposited. The electron-conducting layer 404 may comprise an intrinsically electron-conducting substance or a mixture of carrier matrix and n-type dopant.

On or above the electron-conducting layer 404 may be a second electrical connection layer 402 be formed, for example, be printed, sprayed or deposited. The second electrical connection layer 402 may, for example, be similar or equal to the first electrode 210 , the second electrode 214 , the first electrical connection layer 302 , the first electrically conductive section 408 or the second electrically conductive portion 410 be educated.

The second electrical connection layer 402 can be electrically connected to the second electrically conductive section 410 be connected and with respect to the first electrically conductive portion 408 be electrically isolated, for example by means of electrical insulation 412 ,

The electrical insulations 412 For example, similar to one of the embodiments of electrical insulation 304 according to the description of 3 be or be trained.

The protective diode 108 For example, in the optically inactive region 314 be formed of the organic, optoelectronic component device.

6a Figure-c shows a portion of the organic optoelectronic device device in the method of fabricating an overvoltage protection structure, according to various embodiments.

6a shows an electrically conductive layer structure 608 on or above the vehicle 202 the organic, optoelectronic component device.

The carrier 202 For example, according to one of the embodiments of the description of 2 be educated.

The electrically conductive layer structure 608 For example, layers or mixtures of an electrically conductive metal oxide and / or a metal may be or may be formed therefrom, for example similar to the first electrode 210 and or the second electrode 214 one of the embodiments of the description of 2 ,

An area 602 the electrically conductive layer structure 608 can from the carrier 202 are removed such that electrically isolated from each other, electrically conductive portions 604 . 606 be formed, for example by the carrier 202 in the area 602 is exposed - shown in 6b , The uncovering of the vehicle 202 can be done for example ballistically. A ballistic exposure of the areas to be exposed can be achieved, for example, by bombardment of the area to be exposed with particles, molecules, atoms, ions, electrons and / or photons.

Photon bombardment may, for example, be laser ablation with a laser having a wavelength in a range from about 200 nm to about 1114 nm, for example focused, for example with a focus diameter in a range from about 10 μm to about 2000 μm, for example pulsed, for example with a pulse duration in a range of about 100 fs to about 0.5 ms, for example with a power of about 50 mW to about 1000 mW, for example with a power density of about 100 kW / cm ² to about 10 GW / cm ² and for example, with a repetition rate in a range of about 100 Hz to about 1000 Hz.

In one embodiment, the electrically conductive layer structure 608 be structured such that the area 602 between the illustrated electrically conductive sections 604 . 606 already a spark gap as overvoltage protection structure for the electrically parallel connected organic, optoelectronic device 106 formed.

The area 602 between the electrically conductive sections 604 . 606 However, in various embodiments, it may also be at least partially filled with a substance or substance mixture, for example completely or overfilled - shown in FIG 6c ,

In various embodiments, the substance or the mixture of substances between the electrically conductive sections 604 . 606 for forming a varistor 114 (please refer 7 ) or a spark gap 610 be furnished.

At a spark gap 610 may be the first electrically conductive portion 604 with the first contact pad 102 the organic, optoelectronic component device 300 be electrically connected (not shown) and the second electrically conductive portion 606 with the second contact pad 104 the organic, optoelectronic component device 300 (not shown) such that the spark gap 610 is formed electrically parallel to the organic, optoelectronic component.

In various embodiments of the overvoltage protection structure as a spark gap 610 may be the substance or mixture of substances in the area 602 between the electrically conductive sections 604 . 606 have a dielectric.

The dielectric may, for example, be a gas, for example air; an electrically insulating, crosslinkable organic and / or inorganic compound, for example an epoxy resin, a silicone or a ceramic, or else have a vacuum or be formed therefrom.

The dielectric and parts of the electrically conductive sections 604 . 606 may be surrounded by an encapsulation, wherein the encapsulation may be optional or comprise or may be formed from the same material as the dielectric, for example in which the region 602 is overcrowded.

The encapsulation can be the electrically conductive sections 604 . 606 partially or completely surrounded, for example, the electrically conductive sections 604 . 606 Part of a cross section of a support of an organic, optoelectronic component device (not shown). The encapsulation may, for example, comprise further layers of the carrier. The dielectric, for example, in a cavity having air or an epoxide. The encapsulation can be used as mechanical protection for the electrically conductive sections 604 . 606 a spark gap 610 be formed such that the distance between electrically conductive portions 604 , and the shape of the surfaces of the electrically conductive portions 604 . 606 with respect to external forces, for example a shock, impact, camber or bending, before changes, for example increasing or decreasing the distance or deforming the surface of the electrically conductive sections 604 . 606 are protected.

In one embodiment, the encapsulation may be configured such that the dielectric, for example air, is protected from environmental influences, for example a change in the atmospheric humidity and / or an irradiation of ionizing radiation, for example UV radiation or X-radiation. These environmental factors could provide the necessary voltage across the electrically conductive sections 604 . 606 abutment should change such that the formation of a spark gap is formed at a value of the applied voltage, which may be formed below the threshold voltage of the electronic component to be protected or above the breakdown voltage of the electronic component to be protected.

In one embodiment, the electrically conductive sections 604 . 606 have a planar shape or have a tapered shape. Electrically conductive sections 604 . 606 for example, planar shapes may be similar to a pin or pin, or similar to a planar plane.

Electrically conductive sections 604 . 606 with a tapered shape may be formed, for example, similar to a tip or like a rounding. By means of the tapered shape, the necessary voltage for the formation of the spark gap can be reduced, since the tapered shapes can locally have a higher field strength than the planar shapes.

The electrically conductive sections 604 . 606 However, they may also be partially or completely arbitrary, for example by means of roughness or a rough manufacturing process.

In one embodiment, the electrically conductive sections 604 . 606 have a complementary arrangement with each other, wherein the first electrically conductive portion 604 partially perpendicular and / or parallel to the second electrically conductive portion 606 can be trained.

In one embodiment, the electrically conductive sections 604 . 606 have an overlapping arrangement, ie, a staggered arrangement and / or shifted arrangement of the electrically conductive portions 604 . 606 to each other, wherein parts of the electrically conductive sections 604 . 606 can be parallel to each other, for example, at a distance 602 from each other. The electrically conductive sections 604 . 606 can also be formed in different planes, in the sense of a layer in the cross-sectional plane of the organic, optoelectronic component or drawing plane, for example, similar to a cross.

In one embodiment, a parallel arrangement of the electrically conductive sections 604 . 606 for example as a partially and / or completely concentric arrangement and / or coaxial arrangement of the electrically conductive sections 604 . 606 be educated

In one embodiment, the electrically conductive sections 604 . 606 have a diverging arrangement, for example as a horn bow or as Jacob's ladder. The actual operating voltage of the spark gap for an organic, optoelectronic component device may depend on the specific embodiment of the electrically conductive sections 604 . 606 be such that often a voltage range is specified, within which a spark gap between the electrically conductive sections 604 . 606 can be formed at a certain distance. With the choice of the dielectric between the electrically conductive sections 604 . 606 At a constant distance, the operating voltage of the spark gap can be changed.

The electrically conductive connections should be set up such that the value of the response voltage of the spark gap is formed between the threshold voltage of the organic optoelectronic component and the breakdown voltage of the organic optoelectronic component. A typical value for a threshold voltage of an organic optoelectronic device may be formed in a range of about 0 V to about 5 V. For example, a typical breakdown voltage for such a device may be in the range of about 170V to about 200V.

An embodiment of the electrically conductive sections 604 . 606 that satisfies these conditions may, for example, be a distance 414 having a value of about 50 microns and having a dielectric comprising the air or is formed therefrom. This embodiment has the advantage that a distance of 50 microns can be easily manufactured or executed in terms of process technology.

7 shows a schematic plan view of a varistor, according to various application examples.

The electrically conductive sections 604 . 606 the embodiment of the overvoltage protection structure in 6c can in the field 602 in various embodiments by means of a varistor bridge 114 or a varistor 114 be bridged.

Shown are a first electrically conductive portion 604 and a second electrically conductive portion 606 with a varistor 610 are electrically connected. The varistor 610 can particles 704 made of a material with varistor properties, in a carrier matrix 702 embedded such that an electrically continuous interconnected connection 708 can be trained. At the interfaces 706 the particle 704 with varistor properties, an internal electric field is formed which may resemble a pn junction of a semiconductor. The internal electric field can be generated by means of an external electric field over the electrically conductive sections 604 . 606 be reduced. The internal electric fields can thereby over the interfaces 706 of particles 704 formed with varistor characteristics and be directed against the outer, applied electric field. At an applied voltage corresponding to the operating voltage of the varistor, the resistance of the varistor 610 lose weight, allowing a current flow through a varistor 610 may be possible and the current above the response voltage can increase exponentially. The cause of the increase in the current above the response voltage can be the compensation of internal electric fields by means of the applied voltage. The value of the response voltage can be determined by the number of coupled particle interfaces 706 in the current direction, ie the number of internal fields to be compensated, and the material nature of the particles 704 be dependent.

In other words: the value of the response voltage can vary from the length of the varistor 610 in the current direction, the size of the particles 704 with varistor properties and / or the material nature of the particles 704 be dependent. The response voltage of a varistor 610 can match the geometric dimension of the varistor 610 , For example, the length parallel to the direction of current flow, and the size of the particles 704 with varistor characteristics regarding the length of the varistor 610 be set in the current flow direction.

When reversing the current flow, ie reversing the voltage across the varistor 610 , the current-voltage characteristic with respect to no applied voltage (0V) can point-symmetrically reverse.

The varistor should be designed such that the response voltage of the varistor is greater than the threshold voltage of the organic, optoelectronic component to be protected 106 in which it becomes conductive and smaller than the voltage at which the component to be protected is irreversibly damaged, for example the breakdown voltage or an overvoltage in the forward direction. The threshold voltage of the protected organic, optoelectronic component 106 For example, it may be in a range of about 0.5V to about 50V, for example, in a range of about 4V to about 15V, for example, in a range of about 4V to about 8V.

At an applied voltage below the operating voltage of the varistor 610 can by means of existing internal fields at the particle interfaces a high resistance of the varistor 610 , for example, in a range of about 50 kΩ to about 50 MΩ, which enables a low leakage current, for example, in a range of about 0.1 μA to about 10 μA.

The varistor should be designed such that the response voltage should be less than the breakdown voltage of the organic, optoelectronic component to be protected 106 in the reverse direction, for example, a response voltage of ZnO particles in a range of about 30 V to about 100 V or a response voltage in a range of about 100 V to about 200 V of SiC particles.

The over the varistor 610 decreasing voltage may be insufficient at a response voltage in a range of approximately the breakdown voltage of the device to be protected, for example, if over the device to be protected despite varistor 610 even a voltage greater than the breakdown voltage is applied, for example, at a too flat increase in the current with an applied voltage, for example in the SiC varistor 610 between about 200V and about 300V.

The varistor 610 For example, a carrier matrix can be formed from a one-component epoxy, a two-component epoxy, a silicone or an acrylate.

The epoxy resin may have a viscosity in the range of about 0.8 Pa · s to about 4 Pa · s in the moldable state. By solidifying the carrier matrix, the epoxy resin in the dimensionally stable state can have a viscosity in a range of about 2.5 GPa · s to about 3.0 GPa · s. The hardness of the dimensionally stable epoxy resin may have a Shore D hardness (20 ° C) in a range of about 87 to about 89.

The silicone may have a viscosity in the range of about 0.8 Pa · s to about 4 Pa · s in the moldable state. By solidifying the carrier matrix, the silicone in the dimensionally stable state can have a modulus of elasticity in a range from about 1 MPa to about 6 MPa. The hardness of the dimensionally stable silicone may have a Shore D hardness (20 ° C) of about 40.

In a specific embodiment can be used as a material with varistor 610 SiC flakes (SiC flakes) with a diameter d ₅₀ of approximately 1.7 μm and a d ₉₀ of approximately 4.7 μm are used. The surface of the SiC flakes may have a value in a range of about 5 m ² / g to about 6 m ² / g.

The SiC flakes may be incorporated into the carrier matrix, for example, a silicone, a one-part epoxy, or the carrier component of a two-component epoxy, with respect to the mass of the carrier matrix and SiC flake mass mixture at a weight fraction of from about 20% to about 70% For example, in a range of about 50% to about 60%.

The mixture of carrier matrix and SiC flakes can be understood as Varistor paste. The varistor paste can become a varistor 610 dispensed, for example, with a length in a range of about 200 microns to about 300 microns; a width in a range of about 30 μm to about 60 μm, for example 50 μm; and a height in a range of about 5 μm to about 50 μm, for example 10 μm.

In the case of a two-component epoxy as the carrier matrix, the second component, i. the hardener, be added before dispensing the Varistorpaste.

In the moldable state, the varistor paste may have a viscosity in a range of about 1 Pa · s to about 100 Pa · s.

Solidifying the carrier matrix of the varistor 610 may be thermally formed, for example, an epoxy support matrix on the leadframe with housing at a temperature value in a range of about 100 ° C to about 170 ° C, for example 150 ° C, for about 2 hours to about 6 hours.

Alternatively, materials and layers within the organic optoelectronic component can be structured such that they have, for example, the behavior of a varistor.

In various embodiments, an organic, optoelectronic component device and a method for producing an organic, optoelectronic component device are provided, with which it is possible to realize a protection of the organic, optoelectronic component from electrostatic discharge and / or reverse polarity, without an external overvoltage protection structure , An additional, external overvoltage protection structure for protecting the OLED is not necessary because the OLED can protect itself, for example, with respect to a polarity reversal of the OLED.

Furthermore, external overvoltage protection structures cause additional costs, for example in the purchase, storage and assembly. For the assembly of external overvoltage protection structure again, for example, a circuit board is needed. Since the overvoltage protection structure can be generated at least partially simultaneously, for example in the same processes, as the OLED, costs and production time can be saved.

Claims (16)

Organic optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ), comprising: a carrier ( 202 ); an organic, optoelectronic component ( 106 ); and a surge protection structure ( 108 . 112 . 114 . 610 ); Wherein the organic, optoelectronic component ( 106 ) and the surge protection structure ( 108 . 112 . 114 . 610 ) on or above the carrier ( 202 ) are formed; • wherein the overvoltage protection structure ( 108 . 112 . 114 . 610 ) and the organic, optoelectronic component ( 106 ) have at least one common layer; and wherein the overvoltage protection structure ( 108 . 112 . 114 . 610 ) electrically connected to the organic, optoelectronic component ( 106 ) connected is. Organic optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ) according to claim 1, wherein the organic, optoelectronic component ( 106 ) as an organic light emitting diode ( 106 ) or an organic solar cell ( 106 ) is trained. Organic optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ) according to claim 1 or 2, wherein the overvoltage protection structure ( 108 . 112 . 114 . 610 ) electrically in series with the organic optoelectronic component ( 106 ) is trained. Organic optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ) according to claim 3, wherein the overvoltage protection structure ( 108 . 112 . 114 . 610 ) as a protective diode ( 108 ), wherein the protective diode ( 108 ) in the forward direction to the forward direction of the organic, optoelectronic component ( 106 ) is trained. Organic optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ) according to Claim 4, wherein the protective diode ( 108 ) is arranged such that the breakdown voltage of the protective diode ( 108 ) in the reverse direction is greater than one on the organic, optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ) occurring in the reverse direction voltage pulse. Organic optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ) according to claim 4 or 5, wherein the organic, optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ) is designed such that the response time of the protective diode ( 108 ) is smaller than the response time of the organic, optoelectronic component ( 106 ). Organic optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ) according to claim 1 or 2, wherein the overvoltage protection structure ( 108 . 112 . 114 . 610 ) electrically parallel to the organic, optoelectronic component ( 106 ) is trained. Organic optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ) according to claim 7, wherein the overvoltage protection structure ( 108 . 112 . 114 . 610 ) as a varistor ( 114 ) is trained. Organic optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ) according to claim 7, wherein the overvoltage protection structure ( 108 . 112 . 114 . 610 ) as a protective diode ( 108 ) is trained. Organic optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ) according to claim 7, wherein the overvoltage protection structure ( 108 . 112 . 114 . 610 ) as a spark gap ( 114 ) is trained. Organic optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ) according to one of claims 1 to 10, wherein the common layer comprises at least one electrode ( 210 . 214 ) of the organic, optoelectronic component ( 106 ) and at least one electrically conductive portion of the overvoltage protection structure ( 408 . 410 . 502 . 504 . 604 . 608 ) or is electrically connected thereto. Organic optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ) according to one of claims 1 to 11, wherein the organic, optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ) an optically active region ( 312 ) and an optically inactive region ( 314 ), the overvoltage protection structure ( 108 . 112 . 114 . 610 ) in the optically inactive region ( 314 ) is trained. Method for producing an organic, optoelectronic component device ( 100 . 110 . 120 . 130 . 300 ), the method comprising: forming an organic optoelectronic device ( 106 ) and a surge protection structure ( 108 . 112 . 114 . 610 ) on or above a support ( 202 ); • wherein the overvoltage protection structure ( 108 . 112 . 114 . 610 ) and the organic, optoelectronic component ( 106 ) have at least one common layer; and wherein the overvoltage protection structure ( 108 . 112 . 114 . 610 ) electrically connected to the organic, optoelectronic component ( 106 ) is connected.  The method of claim 13, wherein the common layer is patterned.  The method of claim 14, wherein the common layer is patterned by means of a laser. Method according to one of claims 13 to 15, wherein the overvoltage protection structure ( 108 . 112 . 114 . 610 ) as a structured region of the organic, optoelectronic component ( 106 ) is formed.

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