DE102012204399A8 - Materialprüfungsverfahren und Anordnung zur Materialprüfung sowie ein entsprechendes Computerprogramm und ein entsprechendes computerlesbares Speichermedium - Google Patents
Materialprüfungsverfahren und Anordnung zur Materialprüfung sowie ein entsprechendes Computerprogramm und ein entsprechendes computerlesbares Speichermedium Download PDFInfo
- Publication number
- DE102012204399A8 DE102012204399A8 DE102012204399A DE102012204399A DE102012204399A8 DE 102012204399 A8 DE102012204399 A8 DE 102012204399A8 DE 102012204399 A DE102012204399 A DE 102012204399A DE 102012204399 A DE102012204399 A DE 102012204399A DE 102012204399 A8 DE102012204399 A8 DE 102012204399A8
- Authority
- DE
- Germany
- Prior art keywords
- corresponding computer
- material testing
- arrangement
- storage medium
- readable storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/20058—Measuring diffraction of electrons, e.g. low energy electron diffraction [LEED] method or reflection high energy electron diffraction [RHEED] method
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
- G01N2223/053—Investigating materials by wave or particle radiation by diffraction, scatter or reflection back scatter
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/40—Imaging
- G01N2223/418—Imaging electron microscope
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/605—Specific applications or type of materials phases
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201210204399 DE102012204399B8 (de) | 2012-03-20 | 2012-03-20 | Materialprüfungsverfahren und Anordnung zur Materialprüfung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201210204399 DE102012204399B8 (de) | 2012-03-20 | 2012-03-20 | Materialprüfungsverfahren und Anordnung zur Materialprüfung |
Publications (4)
Publication Number | Publication Date |
---|---|
DE102012204399A1 DE102012204399A1 (de) | 2013-09-26 |
DE102012204399A8 true DE102012204399A8 (de) | 2013-12-12 |
DE102012204399B4 DE102012204399B4 (de) | 2014-08-28 |
DE102012204399B8 DE102012204399B8 (de) | 2014-11-27 |
Family
ID=49112160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE201210204399 Active DE102012204399B8 (de) | 2012-03-20 | 2012-03-20 | Materialprüfungsverfahren und Anordnung zur Materialprüfung |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE102012204399B8 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107894433B (zh) * | 2017-10-10 | 2021-02-19 | 首钢集团有限公司 | 一种定量表征复相材料主相组织晶粒尺寸的方法 |
US11114275B2 (en) * | 2019-07-02 | 2021-09-07 | Fei Company | Methods and systems for acquiring electron backscatter diffraction patterns |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10354017A1 (de) * | 2003-05-15 | 2004-12-02 | Edax Inc. | Chemische Vorfilterung für die Phasenunterscheidung mittels simultaner Energiedispersionsspektrometrie und Elektronenrückstreuungsbeugung |
DE102008041815A1 (de) * | 2008-09-04 | 2010-04-15 | Carl Zeiss Nts Gmbh | Verfahren zur Analyse einer Probe |
US20110089161A1 (en) * | 2008-06-06 | 2011-04-21 | Sandvik Materials Technology Uk Limited | Electrical Resistance Heating Element |
US20110284744A1 (en) * | 2010-05-20 | 2011-11-24 | California Institute Of Technology | Method and system for 4d tomography and ultrafast scanning electron microscopy |
US20120049199A1 (en) * | 2010-08-31 | 2012-03-01 | Chung Yun-Mo | Method of forming polycrystalline silicon layer, method of manufacturing thin film transistor including the method, thin-film transistor manufactured by using the method of manufacturing thin-film transistor, and organic light-emitting display device including the thin-film transistor |
-
2012
- 2012-03-20 DE DE201210204399 patent/DE102012204399B8/de active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10354017A1 (de) * | 2003-05-15 | 2004-12-02 | Edax Inc. | Chemische Vorfilterung für die Phasenunterscheidung mittels simultaner Energiedispersionsspektrometrie und Elektronenrückstreuungsbeugung |
US20110089161A1 (en) * | 2008-06-06 | 2011-04-21 | Sandvik Materials Technology Uk Limited | Electrical Resistance Heating Element |
DE102008041815A1 (de) * | 2008-09-04 | 2010-04-15 | Carl Zeiss Nts Gmbh | Verfahren zur Analyse einer Probe |
US20110284744A1 (en) * | 2010-05-20 | 2011-11-24 | California Institute Of Technology | Method and system for 4d tomography and ultrafast scanning electron microscopy |
US20120049199A1 (en) * | 2010-08-31 | 2012-03-01 | Chung Yun-Mo | Method of forming polycrystalline silicon layer, method of manufacturing thin film transistor including the method, thin-film transistor manufactured by using the method of manufacturing thin-film transistor, and organic light-emitting display device including the thin-film transistor |
Also Published As
Publication number | Publication date |
---|---|
DE102012204399B4 (de) | 2014-08-28 |
DE102012204399B8 (de) | 2014-11-27 |
DE102012204399A1 (de) | 2013-09-26 |
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R012 | Request for examination validly filed | ||
R016 | Response to examination communication | ||
R016 | Response to examination communication | ||
R016 | Response to examination communication | ||
R016 | Response to examination communication | ||
R018 | Grant decision by examination section/examining division | ||
R020 | Patent grant now final |