DE102012204399A8 - Materialprüfungsverfahren und Anordnung zur Materialprüfung sowie ein entsprechendes Computerprogramm und ein entsprechendes computerlesbares Speichermedium - Google Patents

Materialprüfungsverfahren und Anordnung zur Materialprüfung sowie ein entsprechendes Computerprogramm und ein entsprechendes computerlesbares Speichermedium Download PDF

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Publication number
DE102012204399A8
DE102012204399A8 DE102012204399A DE102012204399A DE102012204399A8 DE 102012204399 A8 DE102012204399 A8 DE 102012204399A8 DE 102012204399 A DE102012204399 A DE 102012204399A DE 102012204399 A DE102012204399 A DE 102012204399A DE 102012204399 A8 DE102012204399 A8 DE 102012204399A8
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DE
Germany
Prior art keywords
corresponding computer
material testing
arrangement
storage medium
readable storage
Prior art date
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DE102012204399A
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English (en)
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DE102012204399B4 (de
DE102012204399B8 (de
DE102012204399A1 (de
Inventor
Gerd Nolze
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Bruker Nano GmbH
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Bruker Nano GmbH
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Publication date
Application filed by Bruker Nano GmbH filed Critical Bruker Nano GmbH
Priority to DE201210204399 priority Critical patent/DE102012204399B8/de
Publication of DE102012204399A1 publication Critical patent/DE102012204399A1/de
Publication of DE102012204399A8 publication Critical patent/DE102012204399A8/de
Publication of DE102012204399B4 publication Critical patent/DE102012204399B4/de
Application granted granted Critical
Publication of DE102012204399B8 publication Critical patent/DE102012204399B8/de
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20058Measuring diffraction of electrons, e.g. low energy electron diffraction [LEED] method or reflection high energy electron diffraction [RHEED] method
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00Investigating materials by wave or particle radiation
    • G01N2223/05Investigating materials by wave or particle radiation by diffraction, scatter or reflection
    • G01N2223/053Investigating materials by wave or particle radiation by diffraction, scatter or reflection back scatter
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00Investigating materials by wave or particle radiation
    • G01N2223/40Imaging
    • G01N2223/418Imaging electron microscope
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00Investigating materials by wave or particle radiation
    • G01N2223/60Specific applications or type of materials
    • G01N2223/605Specific applications or type of materials phases

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE201210204399 2012-03-20 2012-03-20 Materialprüfungsverfahren und Anordnung zur Materialprüfung Active DE102012204399B8 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE201210204399 DE102012204399B8 (de) 2012-03-20 2012-03-20 Materialprüfungsverfahren und Anordnung zur Materialprüfung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201210204399 DE102012204399B8 (de) 2012-03-20 2012-03-20 Materialprüfungsverfahren und Anordnung zur Materialprüfung

Publications (4)

Publication Number Publication Date
DE102012204399A1 DE102012204399A1 (de) 2013-09-26
DE102012204399A8 true DE102012204399A8 (de) 2013-12-12
DE102012204399B4 DE102012204399B4 (de) 2014-08-28
DE102012204399B8 DE102012204399B8 (de) 2014-11-27

Family

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Family Applications (1)

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DE201210204399 Active DE102012204399B8 (de) 2012-03-20 2012-03-20 Materialprüfungsverfahren und Anordnung zur Materialprüfung

Country Status (1)

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DE (1) DE102012204399B8 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107894433B (zh) * 2017-10-10 2021-02-19 首钢集团有限公司 一种定量表征复相材料主相组织晶粒尺寸的方法
US11114275B2 (en) * 2019-07-02 2021-09-07 Fei Company Methods and systems for acquiring electron backscatter diffraction patterns

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10354017A1 (de) * 2003-05-15 2004-12-02 Edax Inc. Chemische Vorfilterung für die Phasenunterscheidung mittels simultaner Energiedispersionsspektrometrie und Elektronenrückstreuungsbeugung
DE102008041815A1 (de) * 2008-09-04 2010-04-15 Carl Zeiss Nts Gmbh Verfahren zur Analyse einer Probe
US20110089161A1 (en) * 2008-06-06 2011-04-21 Sandvik Materials Technology Uk Limited Electrical Resistance Heating Element
US20110284744A1 (en) * 2010-05-20 2011-11-24 California Institute Of Technology Method and system for 4d tomography and ultrafast scanning electron microscopy
US20120049199A1 (en) * 2010-08-31 2012-03-01 Chung Yun-Mo Method of forming polycrystalline silicon layer, method of manufacturing thin film transistor including the method, thin-film transistor manufactured by using the method of manufacturing thin-film transistor, and organic light-emitting display device including the thin-film transistor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10354017A1 (de) * 2003-05-15 2004-12-02 Edax Inc. Chemische Vorfilterung für die Phasenunterscheidung mittels simultaner Energiedispersionsspektrometrie und Elektronenrückstreuungsbeugung
US20110089161A1 (en) * 2008-06-06 2011-04-21 Sandvik Materials Technology Uk Limited Electrical Resistance Heating Element
DE102008041815A1 (de) * 2008-09-04 2010-04-15 Carl Zeiss Nts Gmbh Verfahren zur Analyse einer Probe
US20110284744A1 (en) * 2010-05-20 2011-11-24 California Institute Of Technology Method and system for 4d tomography and ultrafast scanning electron microscopy
US20120049199A1 (en) * 2010-08-31 2012-03-01 Chung Yun-Mo Method of forming polycrystalline silicon layer, method of manufacturing thin film transistor including the method, thin-film transistor manufactured by using the method of manufacturing thin-film transistor, and organic light-emitting display device including the thin-film transistor

Also Published As

Publication number Publication date
DE102012204399B4 (de) 2014-08-28
DE102012204399B8 (de) 2014-11-27
DE102012204399A1 (de) 2013-09-26

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