DE102012025433B4 - Method for housing sub-millimeter-wave semiconductor circuits and semiconductor module that can be produced by the method - Google Patents

Abstract

A method of packaging sub-millimeter-wave semiconductor circuits operating at frequencies of ≥ 100 GHz, comprising: - providing at least one semiconductor device (1) with a sub-millimeter-wave semiconductor integrated circuit having electrical pads for the semiconductor circuit at a lower side, A multilayer dielectric carrier foil (2) with larger lateral dimensions than the at least one semiconductor component (1) is provided, the at least one RF line structure (3) for HF connection of the semiconductor component (1) with other components and at a top electrical contact surfaces (4) the RF line structure (3) in an arrangement corresponding to an arrangement of the electrical pads on the bottom of the semiconductor device (1), and - the electrical pads of the semiconductor device (1) by flip-chip mounting with the electrical Contact surfaces (4) of the Trä gerfolie (2) are connected, wherein - the semiconductor device (1) is laterally enclosed with a dielectric material (9), and - an upper side of the semiconductor device (1) with a thermally conductive plate (10) is connected, the at least one semiconductor device (1) and at least part of the semiconductor device (1) laterally enclosing dielectric material (9) completely covered, in which a. the thermally conductive plate (10) is provided with a layer of the dielectric material (9) having or exceeding a thickness measured between top and bottom of the semiconductor device (1) in which openings (18) for thermal conductivity are formed in the layer Plate (10) are introduced, which allow insertion of the semiconductor device (1), wherein the semiconductor device (1) is inserted before the flip-chip mounting in the openings (18) and connected to the thermally conductive plate (10) a dielectric carrier foil (2) is used which has an antenna structure (22), wherein at least one further opening (23) is introduced at a lateral position into the substrate (19) or the layer of the dielectric material (9) after termination of the method, the antenna structure (22) is located and through which the efficiency and bandwidth of the antenna structure (22) is increased, and / or ...

Description

Technical application

The present invention relates to a method of packaging sub-millimeter-wave semiconductor circuits operating at frequencies of ≥ 100 GHz and to a processable semiconductor module incorporating one or more such semiconductor circuits. The method provides a construction and connection technology in the field of high-frequency technology, with the integrated sub-millimeter-wave semiconductor circuits, so-called MMICs, housed and simultaneously connected by signal technology.

In the packaging of MMICs, on the one hand, it must be ensured that the high-frequency signal transmission between the semiconductor circuit and external components is not impaired by the housing. On the other hand, a sufficient heat dissipation must be made possible because conventional MMICs have very small dimensions, for example only a thickness of <100 μm with lateral dimensions of one to two millimeters.

State of the art

Numerous semiconductor device packaging techniques are known in the field of microelectronic circuits. However, these often do not allow signal transmission at frequencies ≥ 100 GHz or can not ensure sufficient heat dissipation.

From the US 5353498 A is a method for housing semiconductor integrated circuits known, which also provides measures for heat dissipation through the housing. In this case, the semiconductor chips are applied to a carrier foil made of a dielectric material into which contact holes and line structures for the electrical connection of terminal areas of the semiconductor chips to external components are introduced in subsequent method steps. Solid thermally conductive bodies are then applied to the upper side of the semiconductor chips and connected to the semiconductor chips by a bonding process. Subsequently, the chips are laterally encapsulated with the thermally conductive bodies thereon with a dielectric material, wherein the potting compound extends only to the top of the thermally conductive body, so that the top remains free. In this way, sufficient heat dissipation for the power semiconductors used there is ensured. However, using this technique to package MMICs with their very small dimensions results in a costly and expensive process.

The US 2005/0093172 A1 describes an electronic circuit arrangement disposed between a wiring substrate and a cover plate made of an insulating or a metallic material and potted with a resin.

The US 2009/0103160 A1 discloses an integrated electro-optic module with an optical modulator driven by an integrated RF circuit. The RF MMICs of this circuit are applied to a multilayer, flexible printed circuit board by flip-chip technology. On the back of the MMICs, a heat-dissipating plate is attached. The space between the plate and the circuit board and between the contacts of the MMICs is filled with a potting compound.

The US 2002/0074146 A1 shows an MMIC device, which is connected with its rear side with a metal plate, and is connected via flip-chip technology with a rigid carrier board. The space between MMIC and a recess in the carrier board should remain free of resin in order to avoid parasitic capacitances. The publication refers to applications in mobile communications, ISDN systems, PCs and other communication technologies. It does not deal with sub-millimeter semiconductor modules operating at frequencies above 100 GHz nor with methods of packaging them.

The object of the present invention is therefore to specify a method for housing sub-millimeter semiconductor circuits which operate at frequencies ≥ 100 GHz, as well as to provide an associated semiconductor module which can be implemented or produced in a cost-effective manner.

Presentation of the invention

The object is achieved with the features of the method and the semiconductor module according to claims 1, 2 and 8. Advantageous embodiments of the method and the semiconductor module are the subject of the dependent claims or can be found in the following description and the embodiments.

In the proposed methods, at least one semiconductor component with a sub-millimeter-wave semiconductor integrated circuit (MMIC) is provided, which has electrical connection surfaces for the electrical contacting of the semiconductor circuit on the underside. The semiconductor component is generally a semiconductor chip with the corresponding integrated circuit. Furthermore, a multilayer dielectric support film is preferably provided on an auxiliary substrate, the larger lateral Dimensions than the semiconductor device has. The dielectric carrier film has at least one high-frequency (HF) line structure for the HF connection of the semiconductor component to other components. On the upper side of the carrier foil, electrical contact surfaces for the HF conductor structure are formed in an arrangement which corresponds to the arrangement of the electrical connection surfaces on the underside of the semiconductor component. Thus, the pads of the semiconductor device can be electrically connected by means of the known flip-chip mounting directly to the contact surfaces of the carrier film. The dielectric carrier film preferably also has direct current (DC) line structures with which a corresponding electrical connection between the semiconductor circuit and further components can be achieved via the carrier film. The HF and the DC line structures are integrated into the carrier film in such a way that they are electrically separated and, as far as possible, no crosstalk from the DC lines to HF lines occurs. The semiconductor component is connected to the carrier foil or the contact surfaces of the carrier foil by means of flip-chip mounting via electrically conductive bumps. The optionally used auxiliary substrate serves for the mechanical stabilization of the carrier film in the flip-chip assembly. After the flip-chip assembly or one or more subsequent process steps, the auxiliary substrate may optionally be removed. This can be done, for example, via back-thinning or by detachment in the case of a correspondingly detachable connection with the carrier film.

In the proposed method, the semiconductor device is laterally enclosed with a dielectric material which, like the dielectric carrier foil, forms part of the housing of the semiconductor component. The upper surface of the semiconductor device is connected to a thermally conductive plate covering the semiconductor device and at least a portion of the surrounding dielectric material. The plate forms, together with the dielectric material and the carrier film, the housing of the semiconductor component. The method not only enables the production of a packaged semiconductor module with a semiconductor component. Rather, with appropriate dimensioning of the carrier film side by side a plurality of semiconductor components as well as other electrical components, for example. Antennas, waveguide transitions or even a complete DC circuit of the MMICs can be integrated with. The electrical or signaling connection of these individual components can take place via the line structures of the carrier foil. The thermally conductive plate on the top is designed so that it covers all integrated components.

With the proposed method, a housing of MMICs can be achieved in a cost effective manner. The carrier film for the application of the one or more MMICs and possibly other components can be prefabricated and requires during the housing process no further introduction of, for example, vias or metallizations. The thermally conductive plate on top of the MMICs allows for good heat dissipation from the small MMICs. When using a plate of electrically conductive material, for example. A metal plate, this can simultaneously take over the electrical function of the mass for the MMICs. Furthermore, this plate serves the mechanical stability of the entire semiconductor module obtained by the housing. The method can thus be used to package integrated sub-millimeter-wave semiconductor circuits without bonding wires and at the same time connect them by signal technology. Among other things, antennas or waveguide transitions as well as the complete DC circuit of the MMICs can be integrated into the housing. This also applies to other components for signal processing, which can also be integrated in the module. Also, passive structures that connect different semiconductor devices in terms of high-frequency technology, for example. CPW lines (CPW: Coplanar Waveguide) or couplers can be integrated into the module. In this way, application-oriented systems such as, for example, radar systems can be provided in a single semiconductor module.

In a preferred embodiment of the method, a second dielectric material is introduced into the intermediate space between the upper side of the carrier foil and the underside of the semiconductor component, which differs from the dielectric material which laterally surrounds the semiconductor components. This second dielectric material is chosen so that the transmission of RF signals between the carrier foil and the semiconductor device via the electrical connection of the terminal with the contact surfaces and the bumps applied in the flip-chip mounting with a low loss angle tanδ <0.003 is possible. Examples of such dielectric materials are polyimide, LCP, Teflon or BCB. In contrast, for example, polymer-based adhesives can be used for the dielectric material surrounding the semiconductor components, which enables particularly good protection against environmental influences and is inexpensive to obtain. The second dielectric material is preferably also chosen so that the desired impedance matching is achieved in the electrical connection of the semiconductor component to the carrier film in order to avoid reflections in the signal transmission.

In an alternative, at least part of the RF line structures in the carrier film are designed such that a coupling of the electromagnetic waves emerging from the semiconductor component and guided in the line structure of the carrier structure into an adjacent waveguide is made possible. In this case, after removal of the auxiliary substrate, a corresponding waveguide structure is attached to the underside of the carrier foil or the module is applied to such a waveguide structure. In this waveguide structure may be, for example, to a block of a metallic material in which the corresponding waveguide is formed, for example. Milled.

The individual method steps of the proposed method can be carried out in different order. Thus, for example, firstly the semiconductor component can be connected to the carrier film by means of flip-chip mounting. Subsequently, the thermally conductive plate is then connected to the top of the semiconductor device.

In another alternative, the thermally conductive plate having a thick layer of the dielectric material applied thereto may also be first prepared or provided. The layer thickness of the dielectric material is chosen such that it corresponds at least to the thickness of the semiconductor component.

The thickness of the semiconductor component is to be understood as the distance between the upper and lower sides of this semiconductor component. The terms top and bottom are to be understood in the present patent application only to distinguish the respective sides of the carrier film and the semiconductor device. Under the bottom is the side with the electrical pads of the semiconductor device understood, while the top represents the opposite side. In the case of the carrier film, the upper side is understood to mean the side remote from the auxiliary substrate with the electrical contact surfaces which are electrically contacted with the connection surfaces of the semiconductor component.

In the dielectric layer on the thermally conductive plate then appropriate openings are introduced, which extend to the thermally conductive plate and have lateral dimensions, which allow insertion of the respective semiconductor device so that its upper side can be connected to the thermally conductive plate. After this step of inserting and connecting, the underside of the semiconductor device is finally connected to the carrier film by means of flip-chip mounting. The semiconductor device is laterally enclosed by the dielectric material, which is applied to the thermally conductive plate. The introduction of a second dielectric material as an underfill between the carrier film and the underside of the semiconductor component can be done either by lateral pressing a corresponding potting compound or in the context of flip-chip mounting. Thus, for example, first the (solder) bumps can be applied to the underside of the semiconductor component and then a layer can be applied with the second dielectric material. This layer is then thinned back so far that the bumps are exposed for contacting straight on their underside. Subsequently, the connection process takes place with the carrier film.

The semiconductor module that can be produced by the method accordingly comprises u. a. at least one semiconductor device with an integrated sub-millimeter-wave semiconductor circuit. Electrical pads on the underside of the semiconductor device are connected via a flip-chip connection by known methods such as thermo-compression, ultrasound or thermal ultrasound with contact surfaces on a top of a multilayer dielectric support foil, the lateral dimensions larger than the semiconductor device and at least one RF line structure for Has RF connection of the semiconductor device with external components. The semiconductor device is laterally enclosed with a dielectric material and connected at the top to a thermally conductive plate that completely covers the semiconductor device and at least a portion of the dielectric material laterally surrounding the semiconductor device. Dielectric material, thermally conductive plate and carrier film thus form a closed housing for the semiconductor device. At the bottom of the carrier film corresponding contact surfaces of the integrated line structure for contacting with external components are also attached. In an alternative, no such contact surface is required for connection to a waveguide. Rather, the integrated RF line structure is correspondingly designed so that it allows the coupling of a guided electromagnetic wave in the waveguide, which is attached to the underside of the carrier film.

Brief description of the drawings

The proposed method and the associated semiconductor module will be explained in more detail below with reference to exemplary embodiments in conjunction with the drawings. Hereby show:

1 an example of an MMC on a carrier film according to the proposed method;

2 - 4 a first example of method steps of the proposed method;

5 - 6 a second example of method steps of the proposed method;

7 an example of an embodiment of the carrier film with a coupling structure in a waveguide and a DC conductor structure;

8th an example of a connected to the semiconductor module waveguide structure; and

9 an example of additional dummy bumps for mechanical stabilization, and

10 another example of an embodiment of the proposed semiconductor module.

Ways to carry out the invention

In the following, various examples of the proposed method for packaging sub-millimeter-wave semiconductor circuits will be described. The integrated semiconductor circuit itself is in this case on a semiconductor chip, which has not shown on the bottom side in the figures pads for dielectric or Hochfrequenzkontaktierung. An essential connection step of all configurations is the connection of this semiconductor component or MMIC 1 with a prefabricated, multilayer carrier foil 2 having at least two dielectric layers.

In the 1 this is the MMIC 1 as well as the carrier film 2 indicated schematically. The carrier foil 2 includes in this example three dielectric layers as well as RF line structures 3 attached to the surface of the carrier film 2 over contact surfaces 4 can be contacted. In the same way, corresponding contact surfaces are also on the underside of the film 5 for the RF line structures 3 provided via the external components via the carrier film 2 with the MMIC 1 can be electrically connected. The contact surfaces 4 on top of the carrier film 2 are arranged in the same pattern as the corresponding pads on the underside of the MMIC 1 , The carrier foil 2 has a larger lateral extent than the MMIC 1 like this in the 1 can be seen. This allows, for example, the closely spaced pads on the bottom of the MMICs 1 through the line structures 3 in the carrier film 2 over more spaced contact surfaces 5 at the bottom of the carrier film 2 to contact. This is schematically in the 1 indicated.

In the proposed method is in all embodiments of the MMIC 1 via a flip-chip assembly with the carrier foil 2 connected. For this, on the pads of the MMIC or the contact surfaces 4 the carrier film 2 applied bumps 6 are in the 1 to recognize the two connected components after the flip-chip assembly shows. In order for the flip-chip mounting sufficient mechanical stability of the carrier film 2 To ensure this is applied to an auxiliary substrate, which in the 1 not shown. This auxiliary substrate 7 However, for example, in the 4 to recognize.

In a method alternative of the proposed method is first a carrier substrate consisting of the thick, thermally and electrically very good conductive plate 10 and a layer of a dielectric material 9 provided. In the dielectric layer are then, for example. By laser ablation, cavities or openings 18 introduced, the insertion of the MMIC to be mounted 1 in contact with the electrically and thermally conductive plate 10 allow (cf. 2 ). The thickness of the layer of the dielectric material 9 is about the same size as the thickness of the MMIC 1 , Width and length of the openings 18 are chosen to match the respective lateral dimensions of the MMICs 1 meet or at least come close. The corresponding MMIC 1 is then in the designated opening with the top, which usually forms a ground plane 18 used and over an adhesive layer 11 with the plate 10 connected. Here, a thermally and electrically good conductive adhesive is used. The bottom of the MMIC 1 With the electrical connection surfaces, in turn, forms as flat a surface as possible with the upper side of the dielectric layer, as shown in FIG 3 is indicated schematically.

Subsequently, as part of a flip-chip assembly to the pads of the MMIC 1 electric conductive bumps 6 attached and the entire component by means of a flip-chip process on the carrier film 2 placed. The result is in 4 shown schematically. The auxiliary substrate 7 will be removed afterwards.

To further increase the mechanical stability can in the connection between the carrier film 2 and with the plate 10 connected MMIC 1 also additional bumps 17 be placed in places that do not require electrical connection. These dummy bumps 17 thus have no electrical function. This is schematically in 9 indicated in addition to the necessary for the electrical connection bumps 6 also several dummy bumps 17 on the layer of the dielectric material 9 to be placed. In return, then is also on the carrier film 2 to the corresponding places an additional metallization 16 provided on which these dummy bumps 17 be soldered during the flip-chip process. This is in the upper part of the 9 to recognize.

In a further method alternative, starting from the in 3 state shown a later underfill 8th down to the height of the bumps 6 Applied, like this from the 5 can be seen. This underfill 8th consists in turn of a suitable for high-frequency transmission dielectric material. For this purpose, a material is chosen which has a low loss angle as well as dielectric values which are the impedances of the bumps 6 adjust according to the specifications. Subsequently, in turn, the entire component by means of flip-chip technology on the carrier film 2 applied, so that the semiconductor module according to 6 is obtained, from which in turn the auxiliary substrate 7 is replaced.

In the carrier foil 2 can in addition to the RF line structures 3 Also be introduced DC line structures, as shown schematically with the DC line structures 13 in 7 is indicated. Furthermore, the RF line structures 3 Also be designed so that they are coupled into one on the underside of the carrier film 2 allow attached waveguide. Such a coupling structure 12 for coupling into a waveguide is in the 8th also indicated schematically. The waveguide 14 is realized in the backside metallization.

Even if the carrier film 2 In the present examples in each case 3-ply is formed, of course, only two or more than three dielectric layers can be used. This depends on the complexity of the line structures to be realized in the film, between which crosstalk should be prevented as far as possible. The shape of the line structures is of course shown in the figures only in a possible embodiment and can also be much more complex.

8th finally shows an example of the connection of a waveguide to the semiconductor module produced by the method. The waveguide structure is used instead of the auxiliary substrate 7 with the underside of the carrier film 2 connected and is in this example by a solid metal body 15 formed, in which the waveguide 14 is introduced.

In 10 is another example of a semiconductor module according to the invention shown schematically. For its production is based on a multi-layer carrier film 2 the MMIC 1 contacted using the flip-chip technique. A dielectric substrate 19 is with a metal plate 10 connected on one side and carries on the opposite side a metallization, using a photolithographic process to form an electrical contact surface 21 is structured. The dielectric substrate 19 has a cavity or opening at the position of the MMIC 18 on. The substrate 19 is at least as thick as the height of the MMIC 1 , In addition, the metallization layers of the substrate 19 ie the metallic plate 10 and the electrical contact surface 21 , by means of a via 20 be electrically connected. On top of the MMIC 1 becomes an adhesive layer 11 applied by the MMIC 1 after insertion into the opening 18 for heat dissipation with the metallic plate 10 is connected. The substrate 19 can additionally with the help of another flip-chip process with the carrier film 2 get connected. In addition, by another cavity 23 in the substrate 19 at the point where the carrier film 2 an antenna structure 22 has the efficiency and bandwidth of the radiating element through this cavity 23 increase.

The preceding figures each show the housing of an MMIC 1 , In the same way, of course, several such MMICs side by side and also other electrical components such as antennas, passive high-frequency structures or a complete DC circuit of the MMICs integrated into the semiconductor module and housed in the same way together with the MMICs and contacted via the carrier film.

LIST OF REFERENCE NUMBERS

1

MMIC

2

support film

3

RF line structure

4

Contact surfaces on top of the carrier film

5

Contact surfaces on underside of the carrier film

6

Flip-chip bumps

7

auxiliary substrate

8th

underfill

9

dielectric material

10

thermally and electrically conductive plate

11

adhesive layer

12

Coupling structure in waveguide

13

DC-line structure

14

waveguide

15

metal body

16

Metallization for dummy bumps

17

Dummy bumps

18

openings

19

dielectric substrate

20

via

21

Contact surface on the substrate

22

antenna structure

23

cavity

Claims (14)

Method for packaging sub-millimeter-wave semiconductor circuits operating at frequencies of ≥ 100 GHz, in which - at least one semiconductor component ( 1 ) is provided with a sub-millimeter-wave semiconductor integrated circuit having electrical pads for the semiconductor circuit on a lower side, - a multilayer dielectric carrier foil ( 2 ) with larger lateral dimensions than the at least one semiconductor component ( 1 ), which comprises at least one RF line structure ( 3 ) for the RF connection of the semiconductor component ( 1 ) with other components and at a top electrical contact surfaces ( 4 ) of the RF line structure ( 3 ) in an arrangement which corresponds to an arrangement of the electrical connection areas on the underside of the semiconductor component ( 1 ), and - the electrical pads of the semiconductor device ( 1 ) by means of flip-chip mounting with the electrical contact surfaces ( 4 ) of the carrier film ( 2 ), wherein - the semiconductor device ( 1 ) laterally with a dielectric material ( 9 ), and - an upper side of the semiconductor device ( 1 ) with a thermally conductive plate ( 10 ) connecting the at least one semiconductor component ( 1 ) and at least a portion of the semiconductor device ( 1 ) laterally enclosing dielectric material ( 9 ) completely covered, in which a. the thermally conductive plate ( 10 ) with a layer of the dielectric material ( 9 ) is provided between one of the upper and lower sides of the semiconductor device ( 1 ) has or exceeds measured thickness, in which openings ( 18 ) to the thermally conductive plate ( 10 ) are introduced, the insertion of the semiconductor device ( 1 ), wherein the semiconductor device ( 1 ) before the flip-chip mounting in the openings ( 18 ) and with the thermally conductive plate ( 10 ), in which a dielectric carrier film ( 2 ), which has an antenna structure ( 22 ), wherein in the substrate ( 19 ) or the layer of the dielectric material ( 9 ) at least one further opening ( 23 ) is introduced at a lateral position at which, after completion of the method, the antenna structure ( 22 ) and by which the efficiency and bandwidth of the antenna structure ( 22 ), and / or b. in which a dielectric carrier foil ( 2 ) is used, wherein at least a part of the RF line structure ( 3 ) is designed such that it allows the coupling of one of the semiconductor component ( 1 ) decoupled electromagnetic wave in a waveguide structure ( 14 . 15 ), wherein the waveguide structure ( 14 . 15 ) for the guidance of the electromagnetic wave on a lower side of the carrier film ( 2 ) is applied. Method for packaging sub-millimeter-wave semiconductor circuits operating at frequencies of ≥ 100 GHz, in which - at least one semiconductor component ( 1 ) is provided with a sub-millimeter-wave semiconductor integrated circuit having electrical pads for the semiconductor circuit on a lower side, - a multilayer dielectric carrier foil ( 2 ) with larger lateral dimensions than the at least one semiconductor component ( 1 ), which comprises at least one RF line structure ( 3 ) for the RF connection of the semiconductor component ( 1 ) with other components and at a top electrical contact surfaces ( 4 ) of the RF line structure ( 3 ) in an arrangement which corresponds to an arrangement of the electrical connection areas on the underside of the semiconductor component ( 1 ), and - the electrical pads of the semiconductor device ( 1 ) by means of flip-chip mounting with the electrical contact surfaces ( 4 ) of the carrier film ( 2 ), wherein - the semiconductor device ( 1 ) laterally with a dielectric material ( 9 ), and - an upper side of the semiconductor device ( 1 ) with a thermally conductive plate ( 10 ) connecting the at least one semiconductor component ( 1 ) and at least a portion of the semiconductor device ( 1 ) laterally enclosing dielectric material ( 9 ) completely covered, in which a. a substrate ( 19 ) of the dielectric material ( 9 ) which is provided between the top and bottom sides of the semiconductor device ( 1 ) has or exceeds measured thickness on one side with a metallic plate as a thermally conductive plate ( 10 ) and on one opposite side has a metallization, which via at least one via ( 20 ) electrically with the thermally conductive plate ( 10 ) and that with a photolithographic process for forming at least one electrical contact surface ( 21 ), wherein in the substrate ( 19 ) Openings ( 18 ) to the thermally conductive plate ( 10 ) are introduced, the insertion of the semiconductor device ( 1 ), and the semiconductor device ( 1 ) before or after the flip-chip mounting in the openings ( 18 ) and with the thermally conductive plate ( 10 ), wherein the at least one electrical contact surface ( 21 ) on the substrate ( 19 ) with a corresponding electrical contact surface ( 4 ) of the carrier film ( 2 ), and wherein a dielectric carrier foil ( 2 ), which has an antenna structure ( 22 ), wherein in the substrate ( 19 ) or the layer of the dielectric material ( 9 ) at least one further opening ( 23 ) is introduced at a lateral position at which, after completion of the method, the antenna structure ( 22 ) and by which the efficiency and bandwidth of the antenna structure ( 22 ), and / or b. in which a dielectric carrier foil ( 2 ) is used, wherein at least a part of the RF line structure ( 3 ) is designed such that it allows the coupling of one of the semiconductor component ( 1 ) decoupled electromagnetic wave in a waveguide structure ( 14 . 15 ), wherein the waveguide structure ( 14 . 15 ) for the guidance of the electromagnetic wave on a lower side of the carrier film ( 2 ) is applied. A method according to claim 1 or 2, characterized in that a gap between the carrier film ( 2 ) and the underside of the semiconductor device ( 1 ) is filled with a second dielectric material which inhibits the transmission of RF signals between the carrier film ( 2 ) and the semiconductor device ( 1 ) via the electrical connection of the connection with the contact surfaces ( 4 ) with a low loss angle tanδ <0.003. A method according to claim 3, characterized in that the second dielectric material is chosen so that the electrical connection in the impedance is adjusted. Method according to one of claims 1 to 4, characterized in that a dielectric carrier film ( 2 ), which in addition to the RF line structure ( 3 ) at least one DC line structure ( 13 ) for producing a DC connection of the semiconductor component ( 1 ) with other components. Method according to one of claims 1 to 5, characterized in that in addition to the at least one semiconductor device ( 1 ) further electrical components with the carrier film ( 2 ) and the dielectric material ( 9 ) are enclosed laterally. Method according to one of claims 1 to 6, characterized in that for the mechanical stabilization of the connection between carrier film ( 2 ) and semiconductor device ( 1 ) in flip-chip mounting bumps ( 17 ), which fulfill no electrical function, on the carrier film ( 2 ) and / or the dielectric material ( 9 ) are applied. Semiconductor module, the at least one semiconductor device ( 1 ) comprising a sub-millimeter-wave semiconductor integrated circuit, in which the semiconductor device ( 1 ) has on a bottom side electrical connection surfaces for the semiconductor circuit, which via a flip-chip connection with contact surfaces ( 4 ) on an upper side of a multilayer dielectric support film ( 2 ), the larger lateral dimensions than the at least one semiconductor device ( 1 ) and at least one RF line structure ( 3 ) for the RF connection of the semiconductor component ( 1 ) with external components, wherein the semiconductor component ( 1 ) laterally with a dielectric material ( 9 ) and at an upper side with a thermally conductive plate ( 10 ) which connects the at least one semiconductor component ( 1 ) and at least a portion of the semiconductor device ( 1 ) laterally enclosing dielectric material ( 9 ) completely covered, in which a. in the dielectric carrier film ( 2 ) at least a part of the RF line structure ( 3 ) is designed such that it allows the coupling of one of the semiconductor component ( 1 ) decoupled electromagnetic wave in a waveguide structure ( 14 . 15 ), and the waveguide structure ( 14 . 15 ) for the guidance of the electromagnetic wave at a lower side of the carrier foil ( 2 ), and / or b. the dielectric carrier foil ( 2 ) at least one antenna structure ( 22 ) over which in the dielectric material ( 9 ) at least one cavity ( 23 ), by which the efficiency and bandwidth of the antenna structure ( 22 ) is increased. Semiconductor module according to claim 8, characterized in that a gap between the upper side of the carrier film ( 2 ) and the underside of the semiconductor device ( 1 ) is filled with a second dielectric material which inhibits the transmission of RF signals between the carrier film ( 2 ) and the semiconductor device ( 1 ) via the flip-chip connection of the connection with the contact surfaces ( 4 ) with a low loss angle tanδ <0.003. Semiconductor module according to claim 9, characterized in that the second dielectric material is chosen so that the flip-chip connection is adapted in impedance. Semiconductor module according to one of claims 8 to 10, characterized in that the dielectric carrier film ( 2 ) in addition to the RF line structure ( 3 ) at least one DC line structure ( 13 ) for producing a DC connection of the semiconductor component ( 1 ) with external components. Semiconductor module according to one of claims 8 to 11, characterized in that the thermally conductive plate ( 10 ) consists of a metallic material and at least one of the contact surfaces ( 4 ) at the top of the dielectric carrier film ( 2 ) via at least one via ( 20 ) through the dielectric material ( 9 ) electrically with the thermally conductive plate ( 10 ) connected is. Semiconductor module according to one of claims 8 to 12, characterized in that the semiconductor module in addition to the at least one semiconductor device ( 1 ) comprises further electrical components which are in contact with the carrier film ( 2 ) and the dielectric material ( 9 ) are enclosed laterally. Semiconductor module according to one of claims 8 to 13, characterized in that between the carrier film ( 2 ) and semiconductor device ( 1 ) and / or dielectric material ( 9 ) Solder bumps or solder balls ( 17 ), which do not fulfill an electrical function, are arranged.

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