DE102011075352A8 - Verfahren zum Rückseitenkontaktieren einer Silizium-Solarzelle und Silizium-Solarzelle mit einer solchen Rückseitenkontaktierung - Google Patents

Verfahren zum Rückseitenkontaktieren einer Silizium-Solarzelle und Silizium-Solarzelle mit einer solchen Rückseitenkontaktierung Download PDF

Info

Publication number
DE102011075352A8
DE102011075352A8 DE102011075352A DE102011075352A DE102011075352A8 DE 102011075352 A8 DE102011075352 A8 DE 102011075352A8 DE 102011075352 A DE102011075352 A DE 102011075352A DE 102011075352 A DE102011075352 A DE 102011075352A DE 102011075352 A8 DE102011075352 A8 DE 102011075352A8
Authority
DE
Germany
Prior art keywords
solar cell
silicon solar
contacting
backside
back contacting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102011075352A
Other languages
English (en)
Other versions
DE102011075352A1 (de
Inventor
Pethe Wieland
Harald Hahn
Kristian SCHLEGEL
Torsten Weber
Martin KUTZER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meyer Burger Germany GmbH
Original Assignee
SolarWorld Innovations GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SolarWorld Innovations GmbH filed Critical SolarWorld Innovations GmbH
Priority to DE102011075352A priority Critical patent/DE102011075352A1/de
Priority to US13/464,365 priority patent/US9252300B2/en
Priority to CN201210138673.4A priority patent/CN102769067B/zh
Publication of DE102011075352A1 publication Critical patent/DE102011075352A1/de
Publication of DE102011075352A8 publication Critical patent/DE102011075352A8/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Sustainable Development (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
DE102011075352A 2011-05-05 2011-05-05 Verfahren zum Rückseitenkontaktieren einer Silizium-Solarzelle und Silizium-Solarzelle mit einer solchen Rückseitenkontaktierung Withdrawn DE102011075352A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE102011075352A DE102011075352A1 (de) 2011-05-05 2011-05-05 Verfahren zum Rückseitenkontaktieren einer Silizium-Solarzelle und Silizium-Solarzelle mit einer solchen Rückseitenkontaktierung
US13/464,365 US9252300B2 (en) 2011-05-05 2012-05-04 Method for backside-contacting a silicon solar cell, silicon solar cell and silicon solar module
CN201210138673.4A CN102769067B (zh) 2011-05-05 2012-05-04 背面接触硅太阳能电池方法及含背面接触的硅太阳能电池

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102011075352A DE102011075352A1 (de) 2011-05-05 2011-05-05 Verfahren zum Rückseitenkontaktieren einer Silizium-Solarzelle und Silizium-Solarzelle mit einer solchen Rückseitenkontaktierung

Publications (2)

Publication Number Publication Date
DE102011075352A1 DE102011075352A1 (de) 2012-11-08
DE102011075352A8 true DE102011075352A8 (de) 2013-01-10

Family

ID=47019426

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011075352A Withdrawn DE102011075352A1 (de) 2011-05-05 2011-05-05 Verfahren zum Rückseitenkontaktieren einer Silizium-Solarzelle und Silizium-Solarzelle mit einer solchen Rückseitenkontaktierung

Country Status (3)

Country Link
US (1) US9252300B2 (de)
CN (1) CN102769067B (de)
DE (1) DE102011075352A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104143584A (zh) * 2013-05-09 2014-11-12 比亚迪股份有限公司 太阳能电池背电极的制备方法、太阳能电池片和太阳能电池组件
US9666739B2 (en) * 2013-06-28 2017-05-30 Sunpower Corporation Photovoltaic cell and laminate metallization
CN104347736A (zh) * 2013-07-25 2015-02-11 比亚迪股份有限公司 一种太阳能电池片和太阳能电池组件
CN104347735A (zh) * 2013-07-25 2015-02-11 比亚迪股份有限公司 一种太阳能电池片和太阳能电池组件
CN104393095B (zh) * 2014-09-25 2016-09-07 锦州华昌光伏科技有限公司 n型硅太阳电池、其制备方法及铝蒸发扩散装置
DE102016210910A1 (de) * 2016-06-19 2017-12-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Verschaltung von Solarzellen, die Aluminiumfolie als Rückkontakt aufweisen
DE102016210908A1 (de) * 2016-06-19 2017-12-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Verschaltung von Solarzellen
FR3071358B1 (fr) * 2017-09-15 2019-09-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'une cellule photovoltaique a homojonction
CN116314382B (zh) * 2023-05-16 2023-09-08 天合光能股份有限公司 太阳能电池及其制作方法、光伏组件及光伏系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4703553A (en) * 1986-06-16 1987-11-03 Spectrolab, Inc. Drive through doping process for manufacturing low back surface recombination solar cells
US20020084503A1 (en) * 2001-01-03 2002-07-04 Eun-Joo Lee High efficient pn junction solar cell
EP2031659A1 (de) * 2007-08-30 2009-03-04 Applied Materials, Inc. Verfahren zur Erzeugung eines metallischen Rückkontaktes eines Halbleiterbauelements, insbesondere einer Solarzelle

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19508712C2 (de) 1995-03-10 1997-08-07 Siemens Solar Gmbh Solarzelle mit Back-Surface-Field und Verfahren zur Herstellung
US20060231802A1 (en) * 2005-04-14 2006-10-19 Takuya Konno Electroconductive thick film composition, electrode, and solar cell formed therefrom
TWI449183B (zh) 2007-06-13 2014-08-11 Schott Solar Ag 半導體元件及製造金屬半導體接點之方法
EP2264779B1 (de) * 2008-03-31 2018-09-05 Sharp Kabushiki Kaisha Solarzelle, solarzellenstrang und solarzellenmodul
EP2443662B1 (de) * 2009-06-18 2019-04-03 LG Electronics Inc. Solarzelle
KR101057124B1 (ko) * 2009-11-03 2011-08-16 엘지전자 주식회사 태양 전지 및 그 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4703553A (en) * 1986-06-16 1987-11-03 Spectrolab, Inc. Drive through doping process for manufacturing low back surface recombination solar cells
US20020084503A1 (en) * 2001-01-03 2002-07-04 Eun-Joo Lee High efficient pn junction solar cell
EP2031659A1 (de) * 2007-08-30 2009-03-04 Applied Materials, Inc. Verfahren zur Erzeugung eines metallischen Rückkontaktes eines Halbleiterbauelements, insbesondere einer Solarzelle

Also Published As

Publication number Publication date
CN102769067B (zh) 2015-12-16
US9252300B2 (en) 2016-02-02
DE102011075352A1 (de) 2012-11-08
CN102769067A (zh) 2012-11-07
US20120279547A1 (en) 2012-11-08

Similar Documents

Publication Publication Date Title
DE102011075352A8 (de) Verfahren zum Rückseitenkontaktieren einer Silizium-Solarzelle und Silizium-Solarzelle mit einer solchen Rückseitenkontaktierung
DE112012002733T8 (de) Brennstoffzelle und Verfahren zum Herstellen einer Brennstoffzelle
EP2691980A4 (de) Dünne siliciumsolarzelle und verfahren zu ihrer herstellung
BR112012022994A2 (pt) dispositivo de célula fotovoltaica e método de controlar um dispositivo de célula fotovoltaica
DE112012002182T8 (de) Dünnschicht-Halbleiterstruktur und Verfahren zum Bilden derselben
DK2559753T3 (da) Mikroorganisme med forbedret L-valin-produktivitet samt fremgangsmåde til fremstilling af L-valin under anvendelse af samme
EP2717325A4 (de) Solarzelle und verfahren zu ihrer herstellung
EP2729966A4 (de) Solarzelle mit nanostrukturierter schicht und verfahren zur herstellung und verwendung
SG10201607963SA (en) Cell culture and gradient migration assay method and devices
DK2726920T3 (da) Spektralselektiv luminescens koncentratorpanel med et fotovoltaisk element
EP2676302A4 (de) Verfahren und strukturen zur herstellung von solarzellen
EP3050120C0 (de) Solarzellen auf basis von nanostrukturiertem silicium und verfahren zur herstellung von solarzellen auf basis von nanostrukturiertem silicium
HUE059253T2 (hu) Vékonyréteg fényelektromos eszköz szemcseeloszlással
IL231672A0 (en) Quasi parabolic solar center and method
EP2747152A4 (de) Solarzelle und verfahren zu ihrer herstellung
EP2715801A4 (de) Solarzelle und herstellungsverfahren dafür
TWI560894B (en) Interdigitated back contact solar cell and its method of processing a substrate
DE102013100062A8 (de) Verfahren zum Entwerfen eines Ein-Chip-Systems mit einer Tapless-Standardzelle, Entwurfssystem und Ein-Chip-System
EP2715796A4 (de) Solarzellenvorrichtung und herstellungsverfahren dafür
HK1245506A1 (zh) 太陽能電池結構及其製造方法
EP2728626A4 (de) Solarzellenmodul und herstellungsverfahren dafür
EP2728623A4 (de) Dünnschicht-solarzelle und verfahren zu ihrer herstellung
SG11201508619VA (en) Silicon wafer for solar cells and method for producing same
EP2763186A4 (de) Solarzelle und verfahren zu ihrer herstellung
EP2695200A4 (de) Solarzelle und verfahren zu ihrer herstellung

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R086 Non-binding declaration of licensing interest
R016 Response to examination communication
R016 Response to examination communication
R081 Change of applicant/patentee

Owner name: MEYER BURGER (GERMANY) GMBH, DE

Free format text: FORMER OWNER: SOLARWORLD INNOVATIONS GMBH, 09599 FREIBERG, DE

Owner name: SOLARWORLD INDUSTRIES GMBH, DE

Free format text: FORMER OWNER: SOLARWORLD INNOVATIONS GMBH, 09599 FREIBERG, DE

R082 Change of representative

Representative=s name: WILHELM, JUERGEN, DIPL.-PHYS.UNIV., DE

Representative=s name: WILHELM & BECK, DE

R082 Change of representative

Representative=s name: WILHELM & BECK, DE

R082 Change of representative
R081 Change of applicant/patentee

Owner name: MEYER BURGER (GERMANY) GMBH, DE

Free format text: FORMER OWNER: SOLARWORLD INDUSTRIES GMBH, 53175 BONN, DE

R082 Change of representative
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee
R002 Refusal decision in examination/registration proceedings