DE102010043204A1 - Method and use of a device for producing a layer of an organic material on a substrate - Google Patents

Abstract

The invention, which includes a method and the use of a device for producing a layer, wherein the material is applied to the substrate using an intermediate carrier and converted on the substrate, is based on the object of producing layers of molecules, in particular microstructured ones crystalline layers on a substrate and to make them more cost-effective and to increase the variety of materials to be used. This is achieved in that the material is evaporated from the intermediate carrier in a vacuum through the input of energy from radiation and deposited on the substrate, the material undergoing a radiation-induced conversion on the substrate.

Description

The invention relates to a method and the use of a device for forming a layer of organic material on a substrate, wherein the material is applied to the substrate using an intermediate carrier and converted on the substrate.

The coating of substrates with organic molecules is preferably carried out by evaporation of the organic molecules and their deposition on the substrate. As a result, defined layers of organic molecules, also in the form of mixed layers consisting of several materials can be produced.

The DE 103 12 641 B1 describes by way of example a method and a vapor deposition apparatus for applying organic material to a substrate for the production of OLEDs (Organic Light Emitting Diode). In this case, the deposition of the organic material takes place by evaporation.

Alternatively, organic layers may also be prepared from solutions, e.g. B. be deposited via screen printing. This is necessary, for example, when using organic molecules with molecular masses above 1000 u, which are no longer accessible to evaporation. The disadvantage of this deposition is that only a small number of molecular species are soluble, which have sufficient attractiveness for use in mass products such as OLEDs or OTFTs (Organic Thin Film Transistors). For example, it is possible to achieve a 10-fold higher charge carrier mobility in an OTFT compared to the soluble TIPS pentacene with pentacene which can only be evaporated in a vacuum, as described in US Pat "Printed Organic Semiconductor Devices", M. Chason et al., Proc. IEEE, Vol. 93, No. 7, July 2005 is described.

Furthermore, after each deposition, whether carried out by physical evaporation or solution of the material, a complex annealing process at relatively high temperatures is required to expel the solvents and / or to induce polymerization and / or crystallization of the deposited material. Among other things, this restricts the selection of substrates. For example, substrates made of plastic in many cases for the production of OTFTs a high temperature resistant but also expensive film of polyethylene naphthalate used. Lower cost foils, eg. B. polyethylene terephthalate, however, have too low a temperature resistance.

The methods described above for depositing organic layers result in the deposition of amorphous layers on the substrate. On the other hand, the deposition of crystalline layers by the known methods is possible only under special conditions such as in the deposition of heated substrate and very slow coating rates.

Therefore, in the field of OTFTs, the possibility of depositing crystalline layers of small organic molecules would be highly desirable because of the high charge carrier mobility. Furthermore, a method would also be desirable which allows microstructuring of crystalline layers of molecules on the substrate.

The object of the invention is therefore to facilitate the production of layers of molecules, in particular of microstructured crystalline layers, on a substrate and to make them less expensive and to increase the spectrum of usable materials.

The object is achieved by a method according to claim 1. Advantageous embodiments are specified in the dependent claims. The object is also achieved by use of a device according to claim 16. Advantageous embodiments are given in the accompanying dependent claims.

According to the invention, the material is applied to the substrate using an intermediate carrier and converted to the substrate by evaporating the material from the intermediate carrier in a vacuum by energy input from a radiation and deposited on the substrate, the material on the substrate an energy-induced transformation in particular experienced by radiation. As a result, the conversion can be carried out with considerably reduced expenditure and the load on the substrate can be reduced, whereby the material restrictions resulting in particular from the manner of material application to the substrate and the conversion process and a complicated and / or time-consuming conversion process can be avoided. In addition, so various conversion processes are possible, for example, a cross-linking of the material.

For the purposes of the invention, transformation means a structural change, such as crystallization or crosslinking, or a material change of the material, such as reactive oxidation or the like.

Preferably, the invention is directed to a conversion of the material in the form of a crystallization. With the invention can in a very simple way and in the temporal proximity to the deposition of the material or directly in the deposition, the conversion, in particular in the form of crystallization.

The application of material to the substrate can be carried out by melting of the intermediate carrier, so that the conversion of the material takes place immediately upon deposition and cooling on the substrate. Another possibility is that the material is vaporized with a first radiation and converted with a second radiation, wherein the second radiation is associated with a different type of radiation than the first radiation or has a different intensity than the first radiation. Thus, the deposition can be carried out for example via a heat conduction and crosslinking via thermal radiation. The deposition can also take place by means of thermal radiation with a high intensity for the evaporation, which is followed by irradiation with just sufficient heat radiation of lower intensity for crystallization on the substrate.

In a further embodiment, a local transfer of a (usually amorphous) material to a substrate using the intermediate carrier takes place, wherein a crystal formation of the material is achieved on the substrate. During the deposition of the material on the intermediate carrier, the substrate rests on the substrate at least in the region of the transfer of the material from the intermediate carrier.

The material to be transferred is first deposited on the intermediate carrier. Subsequently, at least part of the material is transferred from the intermediate carrier to the substrate by means of an energy input by radiation. The material is transferred from the intermediate carrier to the substrate. The substrate can also rest directly on the intermediate carrier.

For the purposes of the invention, a transfer means the transfer of the material from the intermediate carrier to the substrate, the type of transfer, for example evaporation and deposition, contact stamping, etc., being irrelevant if the material is transferred from the intermediate carrier to the substrate the material on the substrate forms a crystalline layer.

In one embodiment of the invention, the local transmission is carried out by an intermediate carrier, which has a microstructuring, whereby the material is microstructured transferred to the substrate. The intermediate carrier (mask) in this case has a microstructure. On this microstructure, the material to be transferred is deposited over the entire surface. Subsequently, at least part of the material is transferred from the intermediate carrier to the substrate by means of an energy input by radiation. In this case, the material is transferred from the intermediate carrier to the substrate in accordance with the microstructuring on the intermediate carrier. The material which is transferred from the intermediate carrier to the substrate forms crystalline regions on the substrate corresponding to the microstructuring.

In a further embodiment of the invention, the local transfer of the material from the intermediate carrier takes place by means of energy input by radiation, wherein the material is locally heated on the intermediate carrier and subsequently transferred to the substrate, the material depositing on the substrate in a crystalline layer. The material is liquefied on the intermediate carrier by the short-term energy input by means of radiation, but not evaporated. The thus heated material solidifies by cooling on the cold substrate surface gradually after completion of the energy input. The formation of crystals thus starts at the cold substrate surface and continues until the intermediate carrier. By forming a grain boundary to the intermediate carrier as a result of the thermally induced shrinkage of the deposited material, a problem-free separation of intermediate carrier and substrate is subsequently possible.

In a further preferred embodiment, the production of a microstructured intermediate carrier takes place in a first step by means of a first deposition of a microstructured radiation-absorbing layer on a transparent intermediate carrier. This is followed by a second deposition of a radiation-reflecting layer on the radiation-absorbing layer and the uncoated surface of the intermediate carrier. As a result, the entire surface of the intermediate carrier is covered by the radiation-reflecting layer. Subsequently, the material to be transferred is deposited over the radiation-reflecting layer on the intermediate carrier. This is followed by a local heating of the material to be transferred, whereby a directional transfer of the material takes place according to the microstructuring on the substrate. The material is deposited on the substrate in a crystalline layer.

In a further embodiment, a protective layer is applied to the intermediate carrier before the deposition of the material. This protective layer prevents possible reactions of the organic material with the radiation-reflecting layer on the intermediate carrier.

In a further embodiment, the microstructuring of the intermediate carrier by a generates structured deposition of the radiation-absorbing layer. The local transmission from the microstructured intermediate carrier takes place by means of energy input by radiation from the side of the intermediate carrier opposite the material to be transferred, wherein the microstructuring is formed from the areas reflecting and absorbing the radiation and the transmission is localized in the absorbing regions of the intermediate carrier. In the reflective areas of the microstructured surface, an energy input is prevented by the radiation, whereby a local heating of the deposited on the intermediate carrier materials is prevented. Only in the absorbing areas of the microstructuring does the local heating take place. As a result, the material to be transferred is deposited on the substrate in the form of microstructuring, whereby a positive stamp effect is achieved.

In a further embodiment of the invention, the material is transferred from the intermediate carrier in the region of the resting substrate. This is ensured in particular by a contact of the substrate on the intermediate carrier or on the microstructure of the intermediate carrier. When using flexible substrates or non-planar intermediate carrier, the transfer thus takes place only in the contact region between the intermediate carrier and the substrate.

In a further embodiment of the invention, the substrate is permanently moved during deposition of the material onto the substrate. This is particularly the case with continuous coating equipment, where tape or film-shaped substrates are coated. Even with roll-to-roll coatings, the substrate is continuously moved. The substrate may for example also be designed as a planar substrate.

In an alternative embodiment of the invention, at first the production of a microstructured intermediate carrier takes place by means of a first deposition of a microstructured radiation-reflecting layer on a transparent intermediate carrier and a second deposition of a radiation-absorbing layer on the radiation-reflecting layer and the uncoated surface of the intermediate carrier. As a result, the entire surface is covered with a radiation-absorbing layer. Thereafter, the deposition of the material to be transferred takes place over the radiation-absorbing layer. Thereafter, by an energy input by means of radiation, a local evaporation of the material to be transferred, whereby a directed deposition of the material takes place in an amorphous layer corresponding to the microstructuring on the substrate. Subsequently, a final heating of the transferred material takes place by means of a second energy input by radiation on the substrate, whereby a conversion of the amorphous layer takes place on the substrate in a crystalline layer. In this case, the second energy input, z. B. the exposure time when using a light source as a radiation source, regardless of the first energy input, so that only a melting of the transferred material, such as an organic material, but not its evaporation takes place. Consequently, by substrates such. B. plastic films (polyethylene terephthalate films) are used, the maximum operating temperature below the melting temperature of the organics (eg., 300 ° C) is used.

In a further embodiment of the invention, the second energy input from the coated side of the substrate. This can be done for example by a heater which is arranged near the substrate. Furthermore, other radiation sources are conceivable, which allow a sufficient energy input into the deposited on the substrate amorphous layer.

In a further embodiment of the invention, the second energy input is from the side opposite the coated side of the substrate. This is particularly advantageous in the case of transparent substrates, for example in the form of glass or plastic films, since a targeted introduction of energy after the deposition of the material on the transparent substrate by an energy input, for example in the form of light, is thus possible.

In a further embodiment of the invention, the energy input takes place by radiation for local heating or evaporation of the material to be transferred from the side of the intermediate carrier opposite the material to be transferred. This is particularly advantageous when using a transparent intermediate carrier.

The further solution of the object is achieved by an inventive use of a device for the local transfer of a material to a substrate. This comprises a layer system consisting of a transparent intermediate carrier with a microstructure of a radiation-absorbing and a radiation-reflecting layer on which the material to be transferred is deposited, as well as a radiation source which is arranged on the opposite side of the deposited material of the intermediate carrier. In a preferred embodiment, the substrate rests directly on the intermediate carrier, at least in the transfer region.

In a further embodiment of the invention is on the radiation-reflecting layer a protective layer is disposed on which the material to be transferred is deposited.

In a further embodiment of the invention, the radiation-reflecting layer is arranged on the microstructured, radiation-absorbing layer.

In a further embodiment of the invention, a heating device is arranged on the material-coated side of the intermediate carrier.

In a further embodiment of the invention, the intermediate carrier is moved permanently. In this case, the deposition of the material according to the microstructuring can be influenced by the transport speed of the intermediate carrier. In one embodiment of this embodiment, by adapting the transport speed of substrate and intermediate carrier, the shape of the microstructuring can be adapted according to requirements.

In a further embodiment of the invention, the microstructured intermediate carrier is designed as a cylinder.

In a further embodiment of the invention, the microstructured intermediate carrier is designed as a cylinder, which is permanently moved.

In a further embodiment of the invention, the microstructured intermediate carrier, which is shown as a cylinder, is arranged in a vacuum chamber of a continuous coating plant, wherein the vacuum chamber has an evaporator for the heating and evaporation of the material and furthermore a shield is provided, which separates the substrate from the evaporator, wherein the shield comprising the microstructured intermediate carrier.

In a further embodiment of the invention, the shield is made heatable.

In a further embodiment of the invention, the radiation source is arranged in the interior of the microstructured intermediate carrier.

In a further embodiment of the invention, the radiation source is designed as a light source.

In a further embodiment of the invention, the light source as a flash tube, z. B. xenon flash tube executed. As a result, it is advantageously possible to transfer large amounts of energy to the intermediate carrier in a short time, thus reducing the minimum structure width and reducing the heat load on the substrate.

In a further embodiment of the invention, the radiation source is designed as a microwave source.

In a further embodiment of the invention, the material to be transferred is an organic material, for example an organic material from the class of small molecules ("Small Molecules").

In a further embodiment of the invention, the material to be transferred is an inorganic material, for example a metal. This is particularly advantageous for the production of components with organic layers, where the deposition of the metal, a contact layer on an already deposited on the substrate organic material can be generated.

In a further embodiment of the invention, the device described above is provided in a continuous coating plant, preferably a vacuum continuous coating plant, in order to carry out a local transfer of a material in crystalline form to a substrate using an intermediate carrier according to the method according to the invention.

Further advantages and features of the invention will become apparent from the following detailed description of exemplary embodiments and the accompanying drawings. Showing:

1 a schematic representation of a microstructured intermediate carrier according to the invention,

2 a schematic representation of an intermediate carrier according to the invention and an overlying substrate,

3 a schematic representation of the targeted transfer of the material and their directional deposition as a crystalline layer on a substrate,

4 a schematic representation of a conversion of the transferred material from an amorphous layer into a crystalline layer on the substrate and

5 a schematic representation of an alternative embodiment of a conversion of the transferred material from an amorphous layer into a crystalline layer on the substrate.

In the exemplary embodiments listed, some embodiments of the method and the device according to the invention are shown by way of example. The embodiments are intended to describe the invention without being limited thereto.

In a first embodiment is in 1 a schematic representation of a microstructured intermediate carrier according to the invention 1 played. In this case, in a first step, a radiation-absorbing layer 3 on a transparent subcarrier 2 applied. This can be done for example by a lithographic process. In a further step, a radiation-reflecting layer 4 on the microstructured, radiation-absorbing layer 3 and the uncoated areas of the transparent subcarrier 2 applied. This results in the entire surface of the microstructured subcarrier 1 a radiation-reflecting layer 4 applied. Thereafter, the deposition of the material to be transferred takes place 5 For example, an organic material such as "Small Molecules" on the radiation-reflective layer 4 ,

Subsequently, as in 2 represented, the substrate 6 on the microstructured subcarrier 1 placed directly on top of it, allowing direct contact between the on the microstructured areas of the subcarrier 1 deposited material 5 and the substrate 6 he follows.

After that, as in 3 represented, an energy input by means of radiation through a radiation source 7 in the form of light, which is on the, the coated side of the subcarrier 1 is arranged opposite side. Due to the energy input, the material to be transferred 5 heated, causing the material to be transferred 5 is liquefied. The material 5 which is now in a liquid phase becomes due to direct contact with the substrate 6 transferred to this. This results in a microstructured transmission of the material 5 from the microstructured subcarrier 1 on the substrate 6 , The intermediate carrier 1 As a result of the energy input, at least in the region of the radiation-absorbing regions, one faces the substrate 6 elevated temperature. The substrate 6 , which has a lower temperature, serves as a starting point of crystallization. As a result of crystallization becomes the transferred material 9 as a crystalline layer on the substrate 6 deposited. In this case, a grain boundary due to the thermally induced shrinkage of the material to the microstructured subcarrier 1 form what a simple release of the microstructured subcarrier 1 from the coated substrate 6 allows.

In a further embodiment, a protective layer not shown before the deposition of the material 5 on the subcarrier 1 applied. This will cause unwanted reactions of the material to be transferred 5 with the radiation-reflecting layer 4 prevented. The protective layer can also be formed transparent.

In a further embodiment, not shown, the production of a microstructured intermediate carrier takes place 1 by means of a first deposition of a microstructured radiation-reflecting layer 4 on a transparent subcarrier 2 , a second deposition of a radiation-absorbing 3 on the radiation-reflecting layer 4 and the uncoated surface of the subcarrier 2 , Thereafter, the deposition of the material to be transferred takes place 5 over the radiation absorbing layer 3 , Subsequently, a local evaporation of the material to be transferred takes place 5 by an energy input by means of radiation through a radiation source 7 , which is arranged on the side opposite the coated side of the intermediate carrier. This results in a directed deposition of the material 9 in an amorphous layer corresponding to the microstructuring on the substrate 6 , In a final step, the transferred material is heated 9 by means of a second energy input 11 by radiation on the substrate 6 , whereby a transformation of the amorphous layer on the substrate 6 takes place in a crystalline layer. In this case, the second energy input 11 through a radiation source 10 , as in 4 shown from the coated side of the substrate 6 respectively.

In an alternative embodiment of the above-described embodiment, as in 5 shown, the second energy input 11 through a radiation source 10 from the coated side of the substrate 6 opposite side. This is especially provided for transparent substrates such as polyethylene terephthalate film.

In a further embodiment, the substrate 6 during the transfer of the material 5 permanently moved. In this case, the substrate 6 as a ribbon or foil-shaped substrate 6 , such as B. be designed as a plastic film, metal strip, etc.

In a further embodiment, not shown, the intermediate carrier is designed as a cylinder, such as quartz glass. The cylinder is thereby permanently moved about its axis of rotation, whereby a continuous transfer of the material 5 from the cylindrical intermediate carrier 1 on the substrate 6 takes place in the transmission area. The cylindrical intermediate carrier is doing during the Rotation around its axis of rotation in a first region coated with the material to be transferred. Thereafter, a rotational movement takes place to a second area in which the transmission of the material 5 from the subcarrier 1 on the substrate 6 he follows. In this second area where the transfer of the material 5 on the substrate 6 takes place, the substrate lies directly on the intermediate carrier 1 on. This can be a directional transfer of the material 5 on the substrate 6 according to the microstructuring on the intermediate carrier 1 respectively. The transferred material 5 deposits on the substrate as a crystalline layer. After the transfer of the material is the cylindrical intermediate carrier 1 as a result of the rotation moved back to the first area, where a new coating with material to be transferred 5 he follows.

In a further embodiment, the radiation source 7 inside the microstructured subcarrier 1 arranged.

In a further embodiment, radiation source 7 designed as a flash tube.

In a further embodiment, the radiation source 7 , which is designed as a flash tube, a xenon flash tube.

In a further embodiment, radiation source 7 designed as a microwave source.

LIST OF REFERENCE NUMBERS

1

microstructured intermediate carrier

2

transparent intermediate carrier

3

radiation-absorbing layer

4

radiation-reflecting layer

5

material to be transferred

6

substratum

7

radiation source

9

transferred material

10

Radiation source for second energy input

11

second energy input

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• DE 10312641 B1 [0003]

Cited non-patent literature

• "Printed Organic Semiconductor Devices", M. Chason et al., Proc. IEEE, Vol. 93, No. 7, July 2005 [0004]

Claims (26)

Method for producing a layer of an organic material on a substrate ( 6 ), the material ( 5 ) on the substrate ( 6 ) using an intermediate carrier ( 1 ) and deposited on the substrate ( 6 ), characterized in that the material ( 5 ) from the intermediate carrier ( 1 ) evaporated in a vacuum by energy input from a radiation and on the substrate ( 6 ) is deposited, the material ( 5 ) on the substrate ( 6 ) experiences an energy-induced conversion. Method according to claim 1, characterized in that the material ( 5 ) is crystallized in the conversion. Method according to claim 1 or 2, characterized in that the material ( 5 ) is evaporated with a first radiation and converted with a second radiation, wherein the second radiation is associated with a different radiation type than the first radiation or has a different intensity than the first radiation. Method according to one of claims 1 to 3, characterized in that a local transmission of the material ( 5 ) from the intermediate carrier ( 1 ) from which the material ( 5 ) from the intermediate carrier ( 1 ) on the substrate ( 6 ) is transmitted, by means of energy input by a radiation takes place wherein the material ( 9 ) on the substrate ( 6 ) forms a crystalline layer. Method according to one of claims 1 to 4, characterized in that the local transmission from an intermediate carrier ( 1 ), which has a microstructure, whereby the material ( 5 ) microstructured onto the substrate ( 6 ) is transmitted. Method according to one of claims 4 or 5, characterized in that the local transmission of the material ( 5 ) from the intermediate carrier ( 1 ) by means of energy input by a radiation, wherein the material ( 5 ) on the intermediate carrier ( 1 ) is heated locally and then onto the substrate ( 6 ), wherein on the substrate ( 6 ) the material ( 9 ) is deposited in a crystalline layer. Method according to one of claims 4 to 6 comprising - the production of a microstructured intermediate carrier ( 1 ) by means of a first deposition of a microstructured radiation-absorbing layer ( 3 ) on a transparent intermediate carrier ( 2 ), a second deposition of a radiation-reflecting layer ( 4 ) on the radiation-absorbing layer ( 3 ) and the uncoated surface of the intermediate carrier ( 2 ), and - a deposition of the material ( 5 ) over the radiation-reflecting layer ( 4 ) and - a local heating of the material to be transferred ( 5 ), whereby a directed transfer of the material ( 5 ) according to the microstructuring on the substrate ( 6 ), the material ( 9 ) deposits on the substrate in a crystalline layer. A method according to claim 7, characterized in that a protective layer before the deposition of the material ( 5 ) on the intermediate carrier ( 1 ) is applied. Method according to claim 7 or 8, characterized in that the microstructuring of the intermediate carrier ( 1 ) by a structured deposition of the radiation-absorbing layer ( 3 ) is produced. Method according to one of the preceding claims, characterized in that a transfer of the material ( 5 ) from the intermediate carrier ( 1 ) in the region of the resting substrate ( 6 ) he follows. Method according to one of the preceding claims, characterized in that the substrate ( 6 ) during the deposition of the material ( 5 ) on the substrate ( 6 ) is moved permanently. Method according to one of the claims 3 comprising - the production of a microstructured intermediate carrier ( 1 ) by means of a first deposition of a microstructured radiation-reflecting layer ( 4 ) on a transparent intermediate carrier ( 2 ), a second deposition of a radiation-absorbing ( 3 ) on the radiation-reflecting layer ( 4 ) and the uncoated surface of the intermediate carrier ( 2 ), - a deposition of the material to be transferred ( 5 ) over the radiation-absorbing layer ( 3 ), and - a local evaporation of the material to be transferred ( 5 ), whereby a directed deposition of the material ( 9 ) in an amorphous layer corresponding to the microstructuring on the substrate ( 6 ) and - a final heating of the transferred material ( 9 ) by means of second energy input ( 11 ) by radiation on the substrate ( 6 ), whereby a conversion of the amorphous layer on the substrate ( 6 ) takes place in a crystalline layer. Method according to claim 12, characterized in that the second energy input ( 11 ) from the coated side of the substrate ( 6 ) he follows. Method according to claim 12, characterized in that the second energy input ( 11 ) from the coated side of the substrate ( 6 ) opposite side takes place. Method according to one of the preceding claims, characterized in that the energy input by radiation for local heating or evaporation of the material to be transferred ( 5 ) of the material to be transferred ( 5 ) Side opposite the intermediate carrier ( 1 ) he follows. Use of a device for carrying out a method according to one of claims 1 to 15, comprising a layer system consisting of a transparent intermediate carrier ( 2 ) with a microstructure of a radiation-absorbing ( 3 ) and a radiation-reflecting layer ( 4 ) on which the material to be transferred ( 5 ) is deposited, and a radiation source ( 7 ) on the deposited material ( 9 ) opposite side of the intermediate carrier ( 1 ) is arranged. Use according to claim 16, characterized in that the substrate ( 6 ) at least in the transmission area directly on the intermediate carrier ( 1 ) rests. Use of a device according to claim 17, characterized in that on the radiation-reflecting layer ( 4 ) a protective layer is arranged, on which the material to be transferred ( 5 ) is deposited. Use of a device according to one of claims 16 or 17, characterized in that the radiation-reflecting layer ( 4 ) on the microstructured, radiation-absorbing layer ( 3 ) is arranged. Use of a device according to any one of claims 16 to 19, characterized in that a heating device on the with the material ( 5 ) coated side of the intermediate carrier ( 1 ) is arranged. Use of a device according to one of claims 16 to 20, characterized in that the microstructured intermediate carrier ( 1 ) is designed as a cylinder. Use of a device according to one of claims 16 to 21, characterized in that the microstructured intermediate carrier ( 1 ) is designed as a cylinder, which is permanently moved. Use of a device according to claim 22, characterized in that the radiation source ( 7 ) inside the microstructured intermediate carrier ( 1 ) is arranged. Use of a device according to claims 16 to 23, characterized in that radiation source ( 7 ) is designed as a flash tube. Use of a device according to claim 24, characterized in that the radiation source ( 7 ), which is designed as a flash tube, is a xenon flash tube. Continuous coating installation comprising a device according to one of Claims 16 to 25 for carrying out a method according to one of Claims 1 to 15.

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