DE102010030623A1 - Piezoelectric resonator structures with temperature compensation - Google Patents
Piezoelectric resonator structures with temperature compensation Download PDFInfo
- Publication number
- DE102010030623A1 DE102010030623A1 DE102010030623A DE102010030623A DE102010030623A1 DE 102010030623 A1 DE102010030623 A1 DE 102010030623A1 DE 102010030623 A DE102010030623 A DE 102010030623A DE 102010030623 A DE102010030623 A DE 102010030623A DE 102010030623 A1 DE102010030623 A1 DE 102010030623A1
- Authority
- DE
- Germany
- Prior art keywords
- temperature compensation
- electrode
- layer
- compensation layer
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000005388 borosilicate glass Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000010979 ruby Substances 0.000 description 2
- 229910001750 ruby Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/587—Air-gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0442—Modification of the thickness of an element of a non-piezoelectric layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Ein elektrischer Resonator weist ein Substrat auf, das einen Hohlraum aufweist. Der elektrische Resonator weist einen Resonatorstapel auf, der schwebend über dem Hohlraum gehalten ist. Der Resonatorstapel weist eine erste Elektrode; eine zweite Elektrode; eine piezoelektrische Schicht; und eine Temperaturkompensationsschicht auf, die Borsilikatglas (BSG) aufweist.An electrical resonator includes a substrate having a cavity. The electrical resonator has a resonator stack suspended over the cavity. The resonator stack has a first electrode; a second electrode; a piezoelectric layer; and a temperature compensation layer comprising borosilicate glass (BSG).
Description
HINTERGRUNDBACKGROUND
Bei vielen elektronischen Anwendungen werden elektrische Resonatoren benötigt. Beispielsweise werden bei vielen drahtlosen Kommunikationsvorrichtungen Radiofrequenz (RF)- und Mikrowellenfrequenzresonatoren als Filter verwendet, um Empfangen und Senden von Signalen zu verbessern. Filter umfassen typischerweise Spulen und Kondensatoren, und in jüngster Zeit Resonatoren.at Many electronic applications become electric resonators needed. For example, in many wireless communication devices Radio frequency (RF) and microwave frequency resonators as filters used to improve the reception and transmission of signals. filter typically include coils and capacitors, and most recently Time resonators.
Wie gewürdigt werden wird, ist es wünschenswert, die Größe von Komponenten von elektronischen Vorrichtungen zu reduzieren. Viele bekannte Filtertechnologien stellen eine Grenze für eine Gesamtsystem-Miniaturisierung dar. Mit dem Bedürfnis, eine Komponentengröße zu reduzieren, hat sich eine Klasse von Resonatoren basierend auf dem piezoelektrischen Effekt entwickelt. Bei piezoelektrisch basierten Resonatoren werden akustische Resonanzmoden in dem piezoelektrischen Material erzeugt. Diese akustischen Wellen werden für eine Verwendung in elektrischen Anwendungen in elektrische Wellen umgewandelt.As be appreciated, it is desirable that Size of components of electronic devices to reduce. Many well-known filter technologies put a limit for a total system miniaturization. With the need to reduce a component size has become a class of resonators based on the piezoelectric Effect developed. In piezoelectric based resonators are generates acoustic resonance modes in the piezoelectric material. These acoustic waves are for use in electrical applications converted into electrical waves.
Eine Art eines piezoelektrischen Resonators ist ein akustischer Dünnschichtvolumenresonator (film bulk acoustic resonator, FBAR. Der FBAR hat den Vorteil einer kleinen Größe und eignet sich für integrierte Schaltung (IC)-Herstellungsarbeitsgeräte und -techniken. Der FBAR umfasst einen akustischen Stapel, der unter anderem eine Schicht eines piezoelektrischen Materials aufweist, die zwischen zwei Elektroden angeordnet ist. Akustische Wellen erreichen über den akustischen Stapel eine Resonanz, wobei die Resonanzfrequenz der Wellen durch die Materialien in dem akustischen Stapel bestimmt ist.A Type of piezoelectric resonator is a thin film bulk acoustic resonator (film bulk acoustic resonator, FBAR. The FBAR has the advantage of a small one Size and is suitable for integrated Circuit (IC) manufacturing equipment and techniques. The FBAR includes an acoustic stack, which includes a Layer of a piezoelectric material that between two Electrodes is arranged. Acoustic waves reach over the acoustic stack a resonance, wherein the resonant frequency the waves is determined by the materials in the acoustic stack.
FBARs sind grundsätzlich akustischen Volumenresonatoren, z. B. Quarz, ähnlich, aber maßstäblich verkleinert, um bei GHz-Frequenzen mitzuschwingen. Da die FBARs Dicken in der Größe von Mikrometern und Längen- und Breitenabmessungen von Hunderten von Mikrometern haben, stellen FBARs günstigerweise eine vergleichsweise kompakte Alternative zu bekannten Resonatoren bereit.FBARs are basically acoustic volume resonators, z. B. Quartz, similar but scaled down to scale, to resonate at GHz frequencies. Since the FBARs thick in the Size of micrometers and length and Have width dimensions of hundreds of microns, provide FBARs Conveniently a comparatively compact alternative ready for known resonators.
Ein Großteil von FBAR-Vorrichtungen hat eine Frequenzantwort, die eine Durchlassbandcharakteristik hat, die durch eine Mittenfrequenz charakterisiert ist. Die Resonanzfrequenz hängt von den Materialien des FBAR-„Stapels” wie auch ihren entsprechenden Dicken ab. Die einzelnen FBARs haben eine Frequenzantwortcharakteristik, die durch eine Resonanzfrequenz charakterisiert ist. Bei bestimmten bekannten FBAR-Vorrichtungen, bei denen das Material des piezoelektrischen Materials Aluminiumnitrid (AlN) und das Material der Elektroden Molybdän (Mo) ist, hat die Resonanzfrequenz der FBAR-Vorrichtung einen Temperaturkoeffizienten, der von ungefähr –20 ppm/°C (ppm, Teile pro Million) bis ungefähr –35 ppm/°C reicht. Solche Temperaturkoeffizienten reduzieren den Temperaturbereich, über den die FBAR-Vorrichtung, die die FBARs integriert, ihre Durchlassbandbreitenspezifikation erfüllen kann. Solche Temperaturkoeffizienten reduzieren zusätzlich eine Herstellungsausbeute, da die Bandbreitengrenzen, bis zu denen die FBAR-Vorrichtungen getestet sind, eingefügt werden müssen, um sicherzustellen, dass die FBAR-Vorrichtung ihre Bandbreitenspezifikation über ihren gesamten Betriebstemperaturbereich erfüllen wird.One Majority of FBAR devices have a frequency response, which has a passband characteristic passing through a center frequency is characterized. The resonant frequency depends on the materials of the FBAR "stack" as well as their corresponding one Thicknesses off. The individual FBARs have a frequency response characteristic, which is characterized by a resonant frequency. For certain known FBAR devices in which the material of the piezoelectric Materials aluminum nitride (AlN) and the material of the electrodes Molybdenum (Mo) has the resonant frequency of the FBAR device a temperature coefficient of about -20 ppm / ° C (ppm, parts per million) to about -35 ppm / ° C is sufficient. Reduce such temperature coefficients the temperature range over which the FBAR device, the the FBARs integrated, meet their passband bandwidth specification can. Such temperature coefficients additionally reduce a production yield, since the bandwidth limits, up to those the FBAR devices are tested need to make sure the FBAR device theirs Bandwidth specification over its entire operating temperature range will meet.
Beispielhaft veranschaulichend kann die Änderung des Temperaturkoeffizienten der einzelnen Materialien der FBAR-Vorrichtung zu einer Änderung der Resonanzfrequenz der FBAR-Vorrichtung von einigen MHz über einen typischen Betriebstemperaturbereich von –30°C bis +85°C führen. Wie gewürdigt werden sollte, mag eine Variation der Resonanzfrequenz (auch als die Frequenzverschiebung bezeichnet) mit einer Temperatur so groß sein, dass sich die Betriebsfrequenz der Vorrichtung außerhalb ihres gewünschten Betriebsfrequenzbereichs verschiebt. Beispielsweise könnte sich, falls die FBAR-Vorrichtung eine Komponente eines Signalfilters ist, eine Änderung der Resonanzfrequenz auf das Durchlassband des Filters über eine akzeptable Grenze hinaus auswirken.exemplary Illustratively, the change of the temperature coefficient the individual materials of the FBAR device to a change of Resonant frequency of the FBAR device of several MHz a typical operating temperature range of -30 ° C to + 85 ° C. How to be appreciated should like a variation of the resonant frequency (also called the frequency shift be designated) with a temperature so great that the operating frequency of the device outside its desired Operating frequency range shifts. For example, could if the FBAR device is a component of a signal filter is a change of the resonant frequency on the pass band filter beyond an acceptable limit.
In einem Bestreben, eine Abweichung der Resonanzfrequenz mit einer Temperatur von FBAR-Vorrichtungen zu reduzieren, sind Temperaturkompensationsschichten entwickelt worden. Bei bestimmten bekannten FBAR-Vorrichtungen hat das Temperaturkompensationselement einen Temperaturkoeffizienten, der in einem Vorzeichen entgegengesetzt zu dem Temperaturkoeffizienten des piezoelektrischen Elements ist. Während einige Materialien bei Temperaturkompensationsschichten nützlich sind, gibt es Nachteile bei ihrer Integrierung in eine Anfertigung von vielen FBAR-Vorrichtungen.In an effort, a deviation of the resonance frequency with a Temperature to reduce FBAR devices are temperature compensation layers been developed. In certain known FBAR devices has the temperature compensation element has a temperature coefficient, in a sign opposite to the temperature coefficient of the piezoelectric element. While some materials at Temperature compensation layers are useful, there are Disadvantages in their integration into one production of many FBAR devices.
Was daher benötigt wird, sind eine akustische Resonatorstruktur und ihr Verfahren zum Herstellen, die zumindest einige der Mängel der bekannten oben Beschriebenen überwinden.What Therefore, what is needed is an acoustic resonator structure and their method of manufacture, which at least some of the defects overcome the known above.
ZUSAMMENFASSENDE DARSTELLUNGSUMMARY PRESENTATION
In Übereinstimmung mit einer exemplarischen Ausführungsform weist ein elektrischer Resonator ein Substrat; ein reflektierendes Element in dem Substrat; und einen Resonatorstapel auf, der schwebend oder hängend über dem reflektierenden Element gehalten ist und aufweist: Eine erste Elektrode; eine zweite Elektrode; eine piezoelektrische Schicht; und eine Temperaturkompensationsschicht, die Borsilikatglas (BSG) aufweist.In accordance with an exemplary embodiment, an electrical resonator includes a substrate; a reflective element in the substrate; and a resonator stack suspended or suspended over the reflective element and comprising: a first electrode; a second electrode; a piezoelectric Layer; and a temperature compensation layer comprising borosilicate glass (BSG).
In Übereinstimmung mit einer weiteren exemplarischen Ausführungsform weist ein Verfahren zum Anfertigen eines elektrischen Resonators ein Bilden eines Hohlraums in einem Substrat; ein Bereitstellen einer Schicht eines Opfermaterials in dem Hohlraum; und ein Bilden eines Resonatorstapels über dem Hohlraum auf, wobei das Bilden des Resonatorstapels ein Bilden einer Temperaturkompensationsschicht aufweist, die Borsilikatglas (BSG) aufweist. Das Verfahren weist auch ein Entfernen des Opfermaterials aus dem Hohlraum auf.In accordance with another exemplary embodiment a method of making an electric resonator is forming a cavity in a substrate; providing a layer a sacrificial material in the cavity; and forming a resonator stack the cavity, wherein forming the resonator stack forming a temperature compensation layer, the borosilicate glass (BSG). The method also includes removing the sacrificial material out of the cavity.
KURZE BESCHREIBUNG DER ZEICHNUNGENBRIEF DESCRIPTION OF THE DRAWINGS
Die exemplarischen Ausführungsbeispiele werden am besten aus der folgenden detaillierten Beschreibung verstanden, wenn sie mit den beigefügten Zeichnungsfiguren gelesen wird. Es sei betont, dass die verschiedenen Merkmale nicht notwendigerweise maßstabsgetreu sind. Tatsächlich mögen die Abmessungen für eine Klarheit der Diskussion beliebig vergrößert oder verkleinert sein. Wo immer anwendbar und zweckmäßig beziehen sich gleiche Bezugsziffern auf gleiche Elemente.The Exemplary embodiments are best understood understood the following detailed description when using the attached drawing figures is read. It was stresses that the various features are not necessarily to scale are. Actually like the dimensions for Clarity of the discussion arbitrarily increased or be downsized. Wherever applicable and appropriate like reference numerals refer to like elements.
DEFINIERTE TERMINOLOGIEDEFINED TERMINOLOGY
Die Begriffe „ein” oder „eine” sind, wie hier verwendet, als eins oder mehr als eins definiert.The Terms are "a" or "an" as used herein, defined as one or more than one.
Der Begriff „Vielzahl” ist, wie hier verwendet, als zwei oder mehr als zwei definiert.Of the The term "variety" is as used herein as two or more than two defined.
Zusätzlich zu ihren gewöhnlichen Bedeutungen meinen die Begriffe „wesentlich” oder „im Wesentlichen” für einen Fachmann bis mit akzeptablen Grenzen oder mit einem akzeptablen Grad. Beispielsweise meint „im Wesentlichen Rückgängigmachen”, dass ein Fachmann das Rückgängigmachen als akzeptabel auffassen würde.additionally to their ordinary meanings the terms "essential" or "im Essentially "for a professional up to acceptable limits or to an acceptable degree. For example, "im Essentially undo "that a professional to undo as acceptable would understand.
Zusätzlich zu ihren gewöhnlichen Bedeutungen meint der Begriff „ungefähr” für einen Fachmann bis innerhalb einer akzeptablen Grenze oder Menge. Beispielsweise meint „ungefähr das Gleiche”, dass ein Fachmann die Gegenstände, die verglichen werden, als die Gleichen auffassen würde.additionally to their usual meanings, the term "about" means a skilled person within an acceptable limit or quantity. For example means "about the same thing", that one Professional objects compared to those Would take the same.
DETALLIERTE BESCHREIBUNGDETAILED DESCRIPTION
In der folgenden detaillierten Beschreibung sind spezielle Details zum Zwecke einer Erklärung und nicht einer Begrenzung dargelegt, um ein grundlegendes Verständnis von exemplarischen Ausführungsbeispielen gemäß den vorliegenden Lehren bereitzustellen. Jedoch wird es für einen Fachmann offensichtlich sein, der die Vorteile der vorliegenden Offenbarung hatte, dass andere Ausführungsbeispiele gemäß den vorliegenden Lehren, die von den speziellen Details abweichen, die hier offenbart sind, innerhalb des Umfangs der angehängten Ansprüche bleiben. Ferner mögen Beschreibungen von bekannten Vorrichtungen und Verfahren ausgelassen werden, um die Beschreibung der exemplarischen Ausführungsbeispiele nicht zu verschleiern. Solche Verfahren und Vorrichtungen liegen eindeutig innerhalb des Umfangs der vorliegenden Lehren.In The following detailed description are specific details set out for the purpose of explanation and not limitation, for a basic understanding of exemplary embodiments according to the present teachings. However, it will be obvious to a person skilled in the art that had the benefits of the present disclosure that others Embodiments according to the present invention Lessons that deviate from the specific details that are revealed here remain within the scope of the appended claims. Further, descriptions of known devices and methods are omitted to the description of the exemplary Embodiments not to disguise. Such procedures and devices are clearly within the scope of the present invention To teach.
Insbesondere
wird mehr als ein Resonatorstapel betrachtet. Beispielsweise mag,
wie in
Die
Anordnung der Temperaturkompensationsschichten
Der
Dotierungsgrad von Bor in dem BSG ist ausgewählt, um einen
geeigneten Grad an Temperaturkompensation bereitzustellen, während
er nicht thermische Randbedingungen bei einem Prozessieren der Resonatorstruktur
In Übereinstimmung
mit einem exemplarischen Ausführungsbeispiel ist die BSG-Schicht
unter Verwendung eines bekannten und eine vergleichsweise niedrige
Temperatur aufweisenden plasmaunterstützten chemischen
Gasphasenabscheidungs(PECVD)-Prozess angefertigt. Beispielhaft veranschaulichend
wird der PECVD-Prozess bei einer Temperatur im Bereich von ungefähr
300°C bis ungefähr 400°C durchgeführt.
Beispielhaft veranschaulichend kann die BSG-Schicht mittels PECVD einen
Gebrauch von Helium (0 sccm (Standardkubikzentimeter, 1 sccm = 0,018124
mbar·l/s) bis 5000 sccm), Stickstoffoxid (0 sscm bis 1000
sccm), Silan oder Tetraethylorthosilikat (TEOS) (0 sccm bis 50 sccm)
und Diboran (0 sccm bis 50 sccm) bei einem Betriebsdruck von ungefähr
0 Torr (1 Torr = 133,322 Pa) bis ungefähr 10 Torr bei einer
Leistung von ungefähr 0 W bis ungefähr 500 W umfassen.
Die Temperatur des Prozesses ist beispielhaft veranschaulichend
bei ungefähr 0°C bis ungefähr 500°C.
Alternativ mag die Temperaturkompensationsschicht
Schließlich
wird die Opferschicht
In Übereinstimmung mit exemplarischen Ausführungsbeispielen sind elektrische Resonatoren beschrieben, die eine Temperaturkompensationsschicht in einem Resonatorstapel aufweisen, der schwebend oder hängend über einem Hohlraum gehalten ist. Ein Fachmann würdigt es, dass viele Variationen, die in Übereinstimmung mit den vorliegenden Lehren sind, möglich sind und innerhalb des Umfangs der beigefügten Ansprüche bleiben. Diese und andere Abweichungen würden einem Fachmann nach Durchsicht der Beschreibung, der Zeichnungen und der Ansprüche hier deutlich werden. Die Erfindung soll daher nicht beschränkt sein außer innerhalb des Geists und Umfangs der angehängten Ansprüche.In accordance with exemplary embodiments are electrical Resonators described that a temperature compensation layer in a resonator stack, suspended or suspended over a cavity is held. A specialist appreciates that many variations that are in accordance with the present Teachings are, are possible and within the scope of attached claims remain. These and others Deviations would a professional after review of the Description, the drawings and the claims here clearly become. The invention should therefore not be limited except within the spirit and scope of the appended Claims.
ZITATE ENTHALTEN IN DER BESCHREIBUNGQUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- - US 6384697 [0025, 0029] US 6384697 [0025, 0029]
- - US 5587620 [0029] US 5587620 [0029]
- - US 5873153 [0029] US 5873153 [0029]
- - US 6507983 [0029] US 6507983 [0029]
- - US 7275292 [0029] - US 7275292 [0029]
- - US 6828713 [0029] US 6828713 [0029]
- - US 20070205850 [0029] US 20070205850 [0029]
- - US 20080258842 [0029] US 20080258842 [0029]
- - US 20060103492 [0029] US 20060103492 [0029]
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/494,886 US9209776B2 (en) | 2009-06-30 | 2009-06-30 | Method of manufacturing an electrical resonator |
US12/494,886 | 2009-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102010030623A1 true DE102010030623A1 (en) | 2011-01-05 |
DE102010030623B4 DE102010030623B4 (en) | 2018-11-08 |
Family
ID=43299304
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102010064686.5A Active DE102010064686B4 (en) | 2009-06-30 | 2010-06-28 | Piezoelectric resonator structures with temperature compensation |
DE102010030623.1A Active DE102010030623B4 (en) | 2009-06-30 | 2010-06-28 | Piezoelectric resonator structures with temperature compensation |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102010064686.5A Active DE102010064686B4 (en) | 2009-06-30 | 2010-06-28 | Piezoelectric resonator structures with temperature compensation |
Country Status (2)
Country | Link |
---|---|
US (2) | US9209776B2 (en) |
DE (2) | DE102010064686B4 (en) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5848131B2 (en) | 2008-12-17 | 2016-01-27 | アナログ デバイシス, インコーポレイテッド | Equipment provided with mechanical resonance structure |
US8689426B2 (en) | 2008-12-17 | 2014-04-08 | Sand 9, Inc. | Method of manufacturing a resonating structure |
US9197185B2 (en) | 2010-04-29 | 2015-11-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Resonator device including electrodes with buried temperature compensating layers |
US9479139B2 (en) * | 2010-04-29 | 2016-10-25 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Resonator device including electrode with buried temperature compensating layer |
KR101853740B1 (en) * | 2011-07-27 | 2018-06-14 | 삼성전자주식회사 | Bulk acoustic wave resonator and duplexer using bulk acoustic wave resonator |
JP2013038471A (en) * | 2011-08-03 | 2013-02-21 | Taiyo Yuden Co Ltd | Acoustic wave filter |
JP5792554B2 (en) * | 2011-08-09 | 2015-10-14 | 太陽誘電株式会社 | Elastic wave device |
KR101919118B1 (en) * | 2012-01-18 | 2018-11-15 | 삼성전자주식회사 | Bulk acoustic wave resonator |
US9695036B1 (en) | 2012-02-02 | 2017-07-04 | Sitime Corporation | Temperature insensitive resonant elements and oscillators and methods of designing and manufacturing same |
DE102012105286B4 (en) * | 2012-06-18 | 2018-08-09 | Snaptrack, Inc. | Microacoustic device with TCF compensation layer |
US9608192B2 (en) | 2013-03-28 | 2017-03-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Temperature compensated acoustic resonator device |
US9450167B2 (en) | 2013-03-28 | 2016-09-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Temperature compensated acoustic resonator device having an interlayer |
JP6185292B2 (en) * | 2013-06-10 | 2017-08-23 | 太陽誘電株式会社 | Elastic wave device |
US9712128B2 (en) | 2014-02-09 | 2017-07-18 | Sitime Corporation | Microelectromechanical resonator |
US9705470B1 (en) | 2014-02-09 | 2017-07-11 | Sitime Corporation | Temperature-engineered MEMS resonator |
KR20160129192A (en) * | 2015-04-29 | 2016-11-09 | 삼성디스플레이 주식회사 | Organic light-emitting display apparatus and manufacturing the same |
US10177736B2 (en) * | 2015-05-29 | 2019-01-08 | Avago Technologies International Sales Pte. Limited | Bulk acoustic wave resonator comprising multiple acoustic reflectors |
US10812038B2 (en) * | 2015-08-25 | 2020-10-20 | Avago Technologies International Sales Pte. Limited | Acoustic wave resonator |
WO2017095437A1 (en) * | 2015-12-04 | 2017-06-08 | Intel Corporation | Film bulk acoustic resonator (fbar) devices for high frequency rf filters |
US10676349B1 (en) | 2016-08-12 | 2020-06-09 | Sitime Corporation | MEMS resonator |
US10800649B2 (en) | 2016-11-28 | 2020-10-13 | Analog Devices International Unlimited Company | Planar processing of suspended microelectromechanical systems (MEMS) devices |
US10498001B2 (en) | 2017-08-21 | 2019-12-03 | Texas Instruments Incorporated | Launch structures for a hermetically sealed cavity |
US10775422B2 (en) | 2017-09-05 | 2020-09-15 | Texas Instruments Incorporated | Molecular spectroscopy cell with resonant cavity |
US10589986B2 (en) | 2017-09-06 | 2020-03-17 | Texas Instruments Incorporated | Packaging a sealed cavity in an electronic device |
US10549986B2 (en) | 2017-09-07 | 2020-02-04 | Texas Instruments Incorporated | Hermetically sealed molecular spectroscopy cell |
US10131115B1 (en) * | 2017-09-07 | 2018-11-20 | Texas Instruments Incorporated | Hermetically sealed molecular spectroscopy cell with dual wafer bonding |
US10551265B2 (en) | 2017-09-07 | 2020-02-04 | Texas Instruments Incorporated | Pressure sensing using quantum molecular rotational state transitions |
US10444102B2 (en) | 2017-09-07 | 2019-10-15 | Texas Instruments Incorporated | Pressure measurement based on electromagnetic signal output of a cavity |
US10424523B2 (en) | 2017-09-07 | 2019-09-24 | Texas Instruments Incorporated | Hermetically sealed molecular spectroscopy cell with buried ground plane |
US10544039B2 (en) | 2017-09-08 | 2020-01-28 | Texas Instruments Incorporated | Methods for depositing a measured amount of a species in a sealed cavity |
CN109708766B (en) * | 2019-01-02 | 2021-01-15 | 华南理工大学 | Detector adopting acoustic wave resonator and carbon nano tube and manufacturing method thereof |
US11611330B2 (en) * | 2019-01-15 | 2023-03-21 | University Of Florida Research Foundation, Incorporated | Micro-electro-mechanical resonators |
US10843920B2 (en) | 2019-03-08 | 2020-11-24 | Analog Devices International Unlimited Company | Suspended microelectromechanical system (MEMS) devices |
CN109951171B (en) * | 2019-03-26 | 2023-09-01 | 浙江华远微电科技有限公司 | Method for preparing film bulk acoustic resonator and filter |
CN110868176A (en) * | 2019-04-23 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Resonator and filter with embedded temperature compensation layer |
CN110868172B (en) * | 2019-04-23 | 2023-09-26 | 中国电子科技集团公司第十三研究所 | Thin film bulk acoustic resonator and semiconductor device |
EP4005090A4 (en) | 2019-07-31 | 2023-08-30 | Qxonix Inc. | Mass loaded bulk acoustic wave (baw) resonator structures, devices and systems |
CN110739931A (en) * | 2019-09-04 | 2020-01-31 | 深圳市汇芯通信技术有限公司 | filters and preparation method thereof |
KR20230003544A (en) * | 2020-05-18 | 2023-01-06 | 어쿠스티스, 인크. | Bulk Acoustic Wave Resonator Filters Containing High Impedance Shunt Branches and Methods of Forming The Same |
CN113472309B (en) * | 2021-04-29 | 2022-12-09 | 广州乐仪投资有限公司 | Piezoelectric MEMS silicon resonator and electronic device |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5587620A (en) | 1993-12-21 | 1996-12-24 | Hewlett-Packard Company | Tunable thin film acoustic resonators and method for making the same |
US6384697B1 (en) | 2000-05-08 | 2002-05-07 | Agilent Technologies, Inc. | Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator |
US6828713B2 (en) | 2002-07-30 | 2004-12-07 | Agilent Technologies, Inc | Resonator with seed layer |
US20060103492A1 (en) | 2004-11-15 | 2006-05-18 | Hongjun Feng | Thin film bulk acoustic resonator with a mass loaded perimeter |
US20070205850A1 (en) | 2004-11-15 | 2007-09-06 | Tiberiu Jamneala | Piezoelectric resonator structures and electrical filters having frame elements |
US7275292B2 (en) | 2003-03-07 | 2007-10-02 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method for fabricating an acoustical resonator on a substrate |
US20080258842A1 (en) | 2004-10-01 | 2008-10-23 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using alternating frame structure |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58156220A (en) | 1982-03-11 | 1983-09-17 | Nec Corp | Thin film piezoelectric filter |
JPH0198245A (en) * | 1987-10-12 | 1989-04-17 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JP3082679B2 (en) * | 1996-08-29 | 2000-08-28 | 日本電気株式会社 | Thin film transistor and method of manufacturing the same |
US6069058A (en) * | 1997-05-14 | 2000-05-30 | United Semiconductor Corp. | Shallow trench isolation for semiconductor devices |
US6930058B2 (en) | 2003-04-21 | 2005-08-16 | Micron Technology, Inc. | Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge |
US7033945B2 (en) * | 2004-06-01 | 2006-04-25 | Applied Materials | Gap filling with a composite layer |
US7304412B2 (en) * | 2005-01-31 | 2007-12-04 | Avago Technologes Wireless Ip (Singapore) Pte Ltd | Apparatus embodying doped substrate portion |
US7868522B2 (en) * | 2005-09-09 | 2011-01-11 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Adjusted frequency temperature coefficient resonator |
US7561009B2 (en) * | 2005-11-30 | 2009-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator (FBAR) devices with temperature compensation |
US7479685B2 (en) * | 2006-03-10 | 2009-01-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Electronic device on substrate with cavity and mitigated parasitic leakage path |
US7345410B2 (en) | 2006-03-22 | 2008-03-18 | Agilent Technologies, Inc. | Temperature compensation of film bulk acoustic resonator devices |
US7824098B2 (en) | 2006-06-02 | 2010-11-02 | The Board Of Trustees Of The Leland Stanford Junior University | Composite mechanical transducers and approaches therefor |
US8283835B2 (en) * | 2010-04-30 | 2012-10-09 | Epcos Ag | Guided bulk acoustic wave device having reduced height and method for manufacturing |
US9590165B2 (en) * | 2011-03-29 | 2017-03-07 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising aluminum scandium nitride and temperature compensation feature |
JP2013038471A (en) * | 2011-08-03 | 2013-02-21 | Taiyo Yuden Co Ltd | Acoustic wave filter |
US9450167B2 (en) * | 2013-03-28 | 2016-09-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Temperature compensated acoustic resonator device having an interlayer |
US10587241B2 (en) * | 2016-03-29 | 2020-03-10 | Avago Technologies International Sales Pte. Limited | Temperature compensated acoustic resonator device having thin seed interlayer |
-
2009
- 2009-06-30 US US12/494,886 patent/US9209776B2/en active Active
-
2010
- 2010-06-28 DE DE102010064686.5A patent/DE102010064686B4/en active Active
- 2010-06-28 DE DE102010030623.1A patent/DE102010030623B4/en active Active
-
2015
- 2015-07-31 US US14/815,157 patent/US10128812B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5587620A (en) | 1993-12-21 | 1996-12-24 | Hewlett-Packard Company | Tunable thin film acoustic resonators and method for making the same |
US5873153A (en) | 1993-12-21 | 1999-02-23 | Hewlett-Packard Company | Method of making tunable thin film acoustic resonators |
US6507983B1 (en) | 1993-12-21 | 2003-01-21 | Agilent Technologies, Inc. | Method of making tunable thin film acoustic resonators |
US6384697B1 (en) | 2000-05-08 | 2002-05-07 | Agilent Technologies, Inc. | Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator |
US6828713B2 (en) | 2002-07-30 | 2004-12-07 | Agilent Technologies, Inc | Resonator with seed layer |
US7275292B2 (en) | 2003-03-07 | 2007-10-02 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method for fabricating an acoustical resonator on a substrate |
US20080258842A1 (en) | 2004-10-01 | 2008-10-23 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using alternating frame structure |
US20060103492A1 (en) | 2004-11-15 | 2006-05-18 | Hongjun Feng | Thin film bulk acoustic resonator with a mass loaded perimeter |
US20070205850A1 (en) | 2004-11-15 | 2007-09-06 | Tiberiu Jamneala | Piezoelectric resonator structures and electrical filters having frame elements |
Also Published As
Publication number | Publication date |
---|---|
US20100327701A1 (en) | 2010-12-30 |
DE102010064686B4 (en) | 2024-01-18 |
US20150341015A1 (en) | 2015-11-26 |
DE102010030623B4 (en) | 2018-11-08 |
US9209776B2 (en) | 2015-12-08 |
US10128812B2 (en) | 2018-11-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE102010030623B4 (en) | Piezoelectric resonator structures with temperature compensation | |
DE102015117953B4 (en) | A bulk acoustic wave resonator device comprising a temperature compensation device having a layer of low acoustic impedance | |
DE102010030454B4 (en) | Acoustic resonator structure having a bridge | |
DE102011004528B4 (en) | Acoustic coupling layer for coupled resonator filters and method for fabricating an acoustic coupling layer | |
DE102013221449B4 (en) | An acoustic resonator with a guard ring | |
DE102012224460B4 (en) | Stable-Mounting-Volume Acoustic Wave Resonator arrangement with a bridge | |
DE602005003372T2 (en) | COMPOSITE MICRONESONATOR WITH HIGH DEFORMATION | |
DE102007000099B4 (en) | Thin film piezoelectric device | |
DE69933907T2 (en) | Acoustic resonator and method of making the same | |
DE10254611B4 (en) | Crystal oscillator and method for its production | |
DE102004041178B4 (en) | Acoustic film resonator and method for its production | |
DE10320707B4 (en) | Improved resonator with seed layer | |
DE602005000537T2 (en) | Piezoelectric thin-film resonator, filter with it and associated manufacturing method | |
DE102017117870B3 (en) | BAW resonator with reduced spurious modes and increased quality factor | |
DE10296795T5 (en) | Acoustic thin film volume resonator and process for its manufacture | |
DE102007000101A1 (en) | Piezoelectric thin film device and method for its production | |
DE10142157A1 (en) | Acoustic resonator for cellular telephone, has compensator that partially offers temperature induced effects caused by negative temperature coefficient of frequency | |
DE102004062312B3 (en) | Piezoelectric resonator, e.g. in mobile telephones, has a piezoelectric layer with a first resonance frequency temperature coefficient with a first polarity sign and electrodes | |
DE10119442A1 (en) | Forming acoustic resonator on substrate, involves forming earth electrode on suspension region, piezoelectric material on earth electrode, and upper electrode on piezoelectric material | |
DE102014107592A1 (en) | Bulk Acoustic Wave Resonator with piezoelectric layer with varying amounts of dopant | |
DE102006042010A1 (en) | Resonator with adjusted frequency-temperature coefficient | |
DE102010061817A1 (en) | Hybrid volume acoustic wave resonator | |
DE102010043797A1 (en) | Acoustic resonator of electric filter used in duplexer, has cantilevered portion that is provided in one side among several sides of electrode | |
DE102010064001A1 (en) | Resonator i.e. bulk acoustic wave resonator, producing method for filter in wireless communication device, involves forming piezoelectric layer above lower electrode, and forming upper electrode on piezoelectric layer | |
DE102007012384A1 (en) | Guided bulk acoustic wave operating component, has wave-guiding layer system including dielectric layers that exhibit material with same chemical composition, where acoustic performance of one layer is higher than that of another layer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R082 | Change of representative |
Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELL, DE |
|
R081 | Change of applicant/patentee |
Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE., SG Free format text: FORMER OWNER: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD., SINGAPORE, SG Effective date: 20130701 |
|
R082 | Change of representative |
Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELL, DE Effective date: 20130701 |
|
R012 | Request for examination validly filed | ||
R016 | Response to examination communication | ||
R018 | Grant decision by examination section/examining division | ||
R130 | Divisional application to |
Ref document number: 102010064686 Country of ref document: DE |
|
R081 | Change of applicant/patentee |
Owner name: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LI, SG Free format text: FORMER OWNER: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD., SINGAPORE, SG |
|
R082 | Change of representative |
Representative=s name: DILG, HAEUSLER, SCHINDELMANN PATENTANWALTSGESE, DE Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELL, DE |
|
R020 | Patent grant now final |