DE102007012384A1 - Guided bulk acoustic wave operating component, has wave-guiding layer system including dielectric layers that exhibit material with same chemical composition, where acoustic performance of one layer is higher than that of another layer - Google Patents

Guided bulk acoustic wave operating component, has wave-guiding layer system including dielectric layers that exhibit material with same chemical composition, where acoustic performance of one layer is higher than that of another layer

Info

Publication number
DE102007012384A1
DE102007012384A1 DE102007012384A DE102007012384A DE102007012384A1 DE 102007012384 A1 DE102007012384 A1 DE 102007012384A1 DE 102007012384 A DE102007012384 A DE 102007012384A DE 102007012384 A DE102007012384 A DE 102007012384A DE 102007012384 A1 DE102007012384 A1 DE 102007012384A1
Authority
DE
Germany
Prior art keywords
layer
dielectric layer
dielectric
higher
component according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102007012384A
Other languages
German (de)
Inventor
Markus Dr. Hauser
Ulrike Dr. Rösler
Werner Dr. Ruile
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
TDK Electronics AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Electronics AG filed Critical TDK Electronics AG
Priority to DE102007012384A priority Critical patent/DE102007012384A1/en
Publication of DE102007012384A1 publication Critical patent/DE102007012384A1/en
Application status is Ceased legal-status Critical

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Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/0222Details of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices

Abstract

The component has a wave-guiding layer system (10) including a piezoelectric layer (1), a dielectric layer (21), another dielectric layer (22) surrounding on the layer (21), and an electrically conductive layer enclosed between the piezoelectric layer and the layer (21). The dielectric layers containing silicon dioxide exhibit a material with a same chemical composition, and an acoustic performance of the layer (21) is higher than that of the layer (22). The system is firmly connected with a cover layer. The layer (22) is arranged between the layer (21) and the cover layer. An independent claim is also included for a method for manufacturing a guided bulk acoustic wave operating component.

Description

  • An electroacoustic component, in particular a component working with GBAW, is specified. GBAW stands for Guided Bulk Acoustic Wave, ie a guided acoustic volume wave. The guided bulk acoustic waves are also called "boundary acoustic waves." Components operating with guided bulk waves are, for example, from the document US 2006/0138902 A1 known.
  • A to be solved task is one with guided Specify acoustic waves working device that cost can be prepared, as well as a method for producing the Component.
  • It is a working with guided acoustic waves device indicated with a waveguiding layer system. The shift system has a piezoelectric layer, a first dielectric layer, a second dielectric adjacent to the first dielectric layer Layer and one between the piezoelectric layer and the first dielectric layer included electrically conductive Shift up. The first and second dielectric layers have a material with the same chemical composition on or Both consist of a material with the same chemical composition. The acoustic quality of the first dielectric layer is higher than that of the second dielectric layer. The acoustic quality of the first dielectric layer is preferably at least 20% higher than that of the second dielectric layer.
  • The Layer system is to excite an acoustic wave and conduction this wave parallel to the layers of the layer system suitable. Of the vertical structure of the layer system is similar to a waveguide. The dielectric layer preferably forms the layer with the lowest acoustic speed. This means that the acoustic Velocity of the relevant wave mode in the dielectric Layer is smaller than in the layers adjacent to it.
  • The electrically conductive layer has electrodes and contact surfaces on. Interlocking, strip-shaped electrodes are Part of electroacoustic transducer in which the wave is excited and is guided. Further strip-shaped electrodes can form acoustic reflectors. The contact surfaces are conductively connected to the transducers.
  • The first and second dielectric layers preferably contain both silica.
  • The first dielectric layer is characterized by a high acoustic Quality out. To produce such a high quality layer It is usually a very low rate of deposition necessary, resulting in the production of layers in a thickness several Microns is, in terms of a lot of time can be unfavorable. The second dielectric layer becomes therefore with a higher rate, but with a lower quality applied. The thickness of the second Dielectric layer is preferably larger as that of the first dielectric layer.
  • The Total thickness of the first and second dielectric layer is preferably at least 5 microns or at least one and a half Wavelengths in the layer system at a transmission frequency of the component propagatable acoustic wave.
  • As a piezoelectric material z. B. LiTaO 3 or LiNbO 3 suitable.
  • The Layer system is firmly connected in a variant with a cover layer. In a variant, the second dielectric layer is between the first dielectric layer and the cover layer. In a further variant is between the first dielectric Layer and the cover layer, the piezoelectric layer arranged.
  • When Covering layer is silicon, glass or another, preferably dielectric, in a variant optically transparent material suitable. Also a Ceramic substrate can be used as a cover layer, for example if the cover layer is provided as a carrier substrate.
  • One with guided acoustic waves working device For example, in a procedure with the following steps getting produced. On a substrate that has at least one piezoelectric Layer is a structured electrically conductive Layer with electrodes and contact surfaces generated. On the substrate with the conductive layer is generated a first dielectric layer a dielectric material plotted at a first deposition rate. The same dielectric Material becomes a second dielectric layer to the first dielectric layer with a second deposition rate applied. The second deposition rate is higher than the first deposition rate. The second deposition rate can be the exceed the first deposition rate by at least a factor of two. The ratio of the deposition rates can also be at least a factor of three, in an advantageous variant at least one Factor five.
  • The first dielectric layer is included For example, generated by physical vapor deposition. For example, sputtering is possible. Sputtering is preferably carried out at a temperature between 60 ° C and 80 ° C.
  • The but the first dielectric layer can also by Chemical Vapor Deposition (CVD) are generated. According to a variant a plasma enhanced CVD method can be used.
  • The second dielectric layer can in principle be used in the same process, however, be generated at a higher rate. she can also be generated in another method.
  • The mentioned in connection with the first dielectric layer Methods also come for producing the second dielectric layer into consideration. In addition, vapor deposition or deposition possible by means of a spin-on process. In principle are for the generation of the second dielectric layer all Suitable processes in which a particularly high deposition rate can be achieved. The increase in the deposition rate For example, in a CVD process through the use of Plasma can be achieved.
  • The second dielectric layer may in a variant of a glass mist be generated. The dielectric material, preferably glass or Silica, in a vacuum chamber at about 2000 ° C. heated so that a glass mist is created. The glass mist cools up to 120 ° C or less and condenses on one Substrate, which is the piezoelectric layer, the electrically conductive Layer and the first dielectric layer comprises.
  • The Temperature at which the second dielectric layer is generated, is preferably at most 120 ° C, for example thus the microstructure of an underlying photoresist layer not damaged.
  • In A variant of the method is based on the electrically conductive Layer before applying the first dielectric layer a patterned photoresist layer or another mask generated. Through structures the photoresist layer, for example, as contact surfaces provided, later exposed areas of the electric covered by conductive layer. The photoresist layer can removed before or after the generation of the second dielectric layer become. At the same time it is arranged on the photoresist layer Material lifted (lift-off process). In one variant can after generating the respective dielectric layer a lift-off Process performed to structure these layers become.
  • alternative it is possible to etch the areas to be exposed by etching expose. In a variant of the method is for this purpose the first dielectric layer even before the application of the second dielectric Etched layer. The second dielectric layer is applied and then etched. It is also possible, only after depositing the second dielectric layer through the two etch dielectric layers.
  • At the respective etching process, a mask can be used, so that it is only etched in the intended areas. On a mask can also be dispensed with, which is especially the case with Chemical Mechanical Polishing (CMP) method is considered. A CMP Method may in particular after the generation of the second dielectric layer occur. At this time, the surface of the second dielectric becomes Smoothed layer, for example, for the Prepare connection with the cover layer by means of a wafer bonding.
  • in the The following is the process for the preparation of the specified device explained with reference to schematic and not to scale figures. Show it:
  • 1A the layer system after the formation of the first dielectric layer prior to the formation of the second dielectric layer;
  • 1B the layer system after the generation of the second dielectric layer;
  • 1C the layer system with plated-through holes between contact surfaces and arranged on the surface of the layer system electrical contacts;
  • 2 the layer system connected to a cover layer, wherein the cover layer is disposed on the dielectric layer;
  • 3A the layer system with exposed contact surfaces prior to the formation of the second dielectric layer;
  • 3B the layer system according to the 3A with the second dielectric layer being etched;
  • 3C the layer system according to the 3B after etching;
  • 4 the layer system connected to a cover layer, wherein the piezoelectric layer is arranged on the cover layer.
  • In the 1A to 1C a first variant of the method is explained.
  • On the piezoelectric substrate 1 An electrically conductive layer is produced in the electrodes 3 and contact surfaces 6 are formed. After that, on the substrate 1 with the conductive layer, a first dielectric layer 21 generated ( 1A ). The thickness of the layer 21 is preferably at most one wavelength.
  • On the first dielectric layer 21 becomes a second dielectric layer 22 generated ( 1B ). Thus, a suitable for conducting acoustic wave layer system 10 provided.
  • For the production of vias 73 be in the layers 21 . 22 Produces openings and at least partially filled with electrically conductive material.
  • On the surface of the layer system 10 , in the 1C on the between dielectric layer 22 , become electrical contacts 74 generated. The electrical contacts 74 are with the contact surfaces 6 by means of vias 73 connected.
  • In the 2 a variant of the device is shown in which the layer system with a cover layer 4 connected is. The cover layer 4 is here on the second dielectric layer 22 arranged. The electrical contacts 74 be on the surface of the topcoat 4 generated.
  • In the 3A to 3C a second variant of the method is explained.
  • In this case, the contact surfaces 6 before the generation of the second dielectric layer 22 uncovered ( 3A ). For this purpose, in the first dielectric layer 21 openings 71 etched. After applying the second dielectric layer 22 is etched again. In the in 3B presented variant is etched over a large area, ie a mask is not used. Preferably, a CMP method is used inter alia. In this way, in one through the dielectric layers 21 . 22 formed composite openings 72 for contacting the contact surfaces 6 generated.
  • 4 shows a further variant of working with GBAW device. In this case, the cover layer is below the layer system 10 arranged. The piezoelectric layer 1 is on the topcoat 4 arranged. The piezoelectric layer 1 can on the provided as a growth substrate cover layer 4 be generated. Alternatively, the cover layer 4 with a layer system provided 10 firmly connected.
  • In all variants, the piezoelectric layer 1 as a thin layer whose thickness is only a few -. B. a maximum of five - wavelengths are formed. The thickness of the piezoelectric layer 1 is preferably at least one half wavelength. The piezoelectric layer 1 is then preferably arranged on a non-piezoelectric carrier substrate. A highly structured piezoelectric layer 1 can be produced on a growth substrate with a suitable surface. The piezoelectric layer 1 However, it can also be monocrystalline, ie, a possibly thinned piezoelectric substrate.
  • The method is not limited to the specified method steps. Further developments of the device are provided. For example, the second dielectric layer may adjoin an acoustic damping layer. In the in 2 variant shown then has the cover layer 4 acoustically damping properties. In variants according to 1C and 4 can on the surface of the layer 22 an acoustically damping potting compound are applied. The acoustically damping material always has a lower rigidity than the second dielectric layer 22 on.
  • 1
    piezoelectric layer
    10
    layer system
    21
    first dielectric layer
    22
    second dielectric layer
    3
    electrodes
    4
    topcoat
    6
    contact area
    71, 72
    opening
    73
    via
    74
    electrical Contact
  • QUOTES INCLUDE IN THE DESCRIPTION
  • This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.
  • Cited patent literature
    • US 2006/0138902 A1 [0001]

Claims (18)

  1. With guided acoustic waves component - with a waveguide layer system ( 10 ) comprising a piezoelectric layer ( 1 ), a first dielectric layer ( 21 ), one to the first dielectric layer ( 21 ) adjacent second dielectric layer ( 22 ) and an electrically conductive layer enclosed between the piezoelectric layer and the first dielectric layer ( 36 ), wherein the first and the second dielectric layer ( 21 . 22 ) have a material with the same chemical composition, - the acoustic quality of the first dielectric layer ( 21 ) is higher than that of the second dielectric layer ( 22 ).
  2. Component according to claim 1, - wherein the electrically conductive layer ( 36 ) Electrodes ( 3 ) and contact surfaces ( 6 ) having.
  3. Component according to Claim 1 or 2, - the first and the second dielectric layer ( 21 . 22 ) Contain silica.
  4. Component according to one of claims 1 to 3, - in which the thickness of the second dielectric layer is greater is than that of the first dielectric layer.
  5. Component according to one of claims 1 to 4, - in which the total thickness of the first and second dielectric layers at least 5 microns.
  6. Component according to one of claims 1 to 4, - in which the total thickness of the first and second dielectric layers at least one and a half wavelengths.
  7. Component according to one of Claims 1 to 6, - the acoustic quality of the first dielectric layer ( 21 ) is at least 20% higher than that of the second dielectric layer ( 22 ).
  8. Component according to one of Claims 1 to 7, - the layer system ( 10 ) with a cover layer ( 4 ) is firmly connected.
  9. Component according to Claim 8, - the second dielectric layer ( 22 ) between the first dielectric layer ( 21 ) and the cover layer ( 4 ) is arranged.
  10. Component according to Claim 8, - the piezoelectric layer ( 1 ) between the first dielectric layer ( 21 ) and the cover layer ( 4 ) is arranged.
  11. Method of manufacturing a guided acoustic wave device comprising the steps of: - on a substrate comprising a piezoelectric layer ( 1 ), a structured electrically conductive layer with electrodes ( 3 ) and contact surfaces ( 6 ) on the substrate with the conductive layer is used to produce a first dielectric layer ( 21 ) applied a dielectric material at a first deposition rate, - the dielectric material is used to produce a second dielectric layer ( 22 ) is applied to the first dielectric layer at a second deposition rate, wherein the second deposition rate is higher than the first deposition rate.
  12. The method of claim 11, wherein the first dielectric layer ( 21 ) is generated by physical vapor deposition.
  13. The method of claim 11, wherein the first dielectric layer ( 21 ) is produced by chemical vapor deposition.
  14. Method according to one of claims 11 to 13, - wherein the second dielectric layer ( 22 ) is produced by chemical vapor deposition.
  15. Method according to one of claims 11 to 13, - wherein the second dielectric layer ( 22 ) is produced by vapor deposition of the dielectric material.
  16. Method according to one of claims 11 to 13, - wherein the second dielectric layer ( 22 ) is generated by means of a spin-on method.
  17. Method according to claim 15, - in which the temperature at which the second dielectric layer is generated is maximum 120 ° C.
  18. Method according to one of claims 11 to 17, - in which the second deposition rate is at least a factor of two higher as the first deposition rate.
DE102007012384A 2007-03-14 2007-03-14 Guided bulk acoustic wave operating component, has wave-guiding layer system including dielectric layers that exhibit material with same chemical composition, where acoustic performance of one layer is higher than that of another layer Ceased DE102007012384A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE102007012384A DE102007012384A1 (en) 2007-03-14 2007-03-14 Guided bulk acoustic wave operating component, has wave-guiding layer system including dielectric layers that exhibit material with same chemical composition, where acoustic performance of one layer is higher than that of another layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007012384A DE102007012384A1 (en) 2007-03-14 2007-03-14 Guided bulk acoustic wave operating component, has wave-guiding layer system including dielectric layers that exhibit material with same chemical composition, where acoustic performance of one layer is higher than that of another layer

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010070000A1 (en) * 2008-12-17 2010-06-24 Epcos Ag Construction element that operates with acoustic waves, and method for the manufacture thereof
US8248185B2 (en) 2009-06-24 2012-08-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure comprising a bridge
WO2013083469A3 (en) * 2011-12-06 2013-09-12 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Surface acoustic wave component and method for producing it
US8902023B2 (en) 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US9099983B2 (en) 2011-02-28 2015-08-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator device comprising a bridge in an acoustic reflector
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US9450561B2 (en) 2009-11-25 2016-09-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with varying amounts of dopant
US9520856B2 (en) 2009-06-24 2016-12-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US9608592B2 (en) 2014-01-21 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic wave resonator (FBAR) having stress-relief
US9673778B2 (en) 2009-06-24 2017-06-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Solid mount bulk acoustic wave resonator structure comprising a bridge

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1538748A2 (en) * 2003-11-12 2005-06-08 Fujitsu Limited Elastic boundary wave device and method of manufacturing the same
US20060138902A1 (en) 2004-01-19 2006-06-29 Hajime Kando Acoustic boundary wave device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1538748A2 (en) * 2003-11-12 2005-06-08 Fujitsu Limited Elastic boundary wave device and method of manufacturing the same
US20060138902A1 (en) 2004-01-19 2006-06-29 Hajime Kando Acoustic boundary wave device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010070000A1 (en) * 2008-12-17 2010-06-24 Epcos Ag Construction element that operates with acoustic waves, and method for the manufacture thereof
US8674583B2 (en) 2008-12-17 2014-03-18 Epcos Ag Construction element that operates with acoustic waves, and method for the manufacture thereof
US8248185B2 (en) 2009-06-24 2012-08-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure comprising a bridge
US8902023B2 (en) 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US9673778B2 (en) 2009-06-24 2017-06-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Solid mount bulk acoustic wave resonator structure comprising a bridge
US9520856B2 (en) 2009-06-24 2016-12-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US9450561B2 (en) 2009-11-25 2016-09-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with varying amounts of dopant
US9099983B2 (en) 2011-02-28 2015-08-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator device comprising a bridge in an acoustic reflector
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
WO2013083469A3 (en) * 2011-12-06 2013-09-12 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Surface acoustic wave component and method for producing it
EP3232569A3 (en) * 2011-12-06 2017-12-13 Leibnitz-Institut für Festkörper- und Werkstoffforschung Dresden e.V. Acoustic surface wave element and method for its production
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9608592B2 (en) 2014-01-21 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic wave resonator (FBAR) having stress-relief

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