DE102010001791A1 - LED-assembly, has light emission opening unsealed by enclosing unit, and electro static discharging units formed in such manner such that discharging units made up of ceramic material form enclosing unit - Google Patents
LED-assembly, has light emission opening unsealed by enclosing unit, and electro static discharging units formed in such manner such that discharging units made up of ceramic material form enclosing unit Download PDFInfo
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- DE102010001791A1 DE102010001791A1 DE102010001791A DE102010001791A DE102010001791A1 DE 102010001791 A1 DE102010001791 A1 DE 102010001791A1 DE 102010001791 A DE102010001791 A DE 102010001791A DE 102010001791 A DE102010001791 A DE 102010001791A DE 102010001791 A1 DE102010001791 A1 DE 102010001791A1
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- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 9
- 238000007599 discharging Methods 0.000 title abstract 5
- 230000003068 static effect Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000004020 conductor Substances 0.000 claims abstract description 33
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 claims abstract description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 230000001419 dependent effect Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000012811 non-conductive material Substances 0.000 claims description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000002241 glass-ceramic Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010971 silver fill Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
- H05K1/0257—Overvoltage protection
- H05K1/0259—Electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/183—Components mounted in and supported by recessed areas of the printed circuit board
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/07—Electric details
- H05K2201/073—High voltage adaptations
- H05K2201/0738—Use of voltage responsive materials, e.g. voltage switchable dielectric or varistor materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/0929—Conductive planes
- H05K2201/09309—Core having two or more power planes; Capacitive laminate of two power planes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/06—Lamination
- H05K2203/063—Lamination of preperforated insulating layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Die
Erfindung betrifft eine LED-Baueinheit
mit mindestens einem
LED-Chip,
mit elektrischen Zuleitungsmitteln zur Stromversorgung
des/der LED-Chip/s,
mit Einschlussmitteln für den/die
LED-Chip/s, welche den/die LED-Chip/s zumindest teilweise rahmenförmig
umgeben und eine Austrittsöffnung für das Licht aufweisen,
und mit ESD-Mitteln zum Schutz des/der LED-Chips gegen Beschädigung
durch Überspannung.The invention relates to an LED assembly
with at least one LED chip,
with electrical supply means for powering the LED chip (s),
encasing means for the LED chip (s) surrounding the LED chip (s) at least partially framed and having an exit port for the light; and ESD means for protecting the LED chip (s) against overvoltage damage ,
Der Begriff LED steht für den englischen Begriff „light emitting diode” (Leuchtdiode). Der Begriff ESD steht für den englischen Begriff „electro static discharge” (elektrostatische Entladung).Of the Term LED stands for the English term "light emitting diode "(light-emitting diode). The term ESD stands for the English term "electrostatic discharge" (electrostatic discharge) Discharge).
Eine
LED-Baueinheit der vorstehend genannten Art ist beispielsweise nach
der
Weiterhin ist eine LED-Baueinheit auf dem Markt, die von der Firma Lumileds „Rebel” vertrieben wird. Diese LED-Baueinheit weist ein Substrat aus Keramikmaterial auf, auf dem ein LED-Chip angeordnet ist. Auf der Oberseite des Substrates verlaufen Leiterbahnen, die mit entsprechenden Leiterbahnen an der Unterseite des Substrates über Kontaktierungs-Löcher elektrisch verbunden sind. Der LED-Chip kann auf diese Weise mit Strom versorgt werden. Neben dem LED-Chip befindet sich auf dem Substrat weiterhin ein TVS-Element, das zu dem LED-Chip parallel geschaltet ist und dieses gegen Überspannungen schützen soll. Die Abkürzung TVS steht für den englischen Begriff „transiant voltage suppressor”. Das TVS-Element hat also die Funktion der eingangs beschriebenen ESD-Mittel. Der LED-Chip und das TVS-Element sind von einer Silikon-Linse überdeckt.Farther is a LED package on the market, which is distributed by the company Lumileds "Rebel". This LED package has a substrate of ceramic material, on which an LED chip is arranged. On top of the substrate run traces that are connected to the corresponding traces on the Bottom of the substrate via contacting holes are electrically connected. The LED chip can handle this way Be supplied with electricity. Next to the LED chip is on the substrate continue a TVS element connected in parallel to the LED chip and this is to protect against surges. The abbreviation TVS stands for the English term "transiant voltage suppressor ". The TVS element thus has the function of initially described ESD means. The LED chip and the TVS element are covered by a silicone lens.
Zu erwähnen ist ferner ein auf dem Markt befindliches Produkt der Firma Nichia, das unter der Bezeichnung „Rigel” verkauft wird. Bei diesem sind die Einschlussmittel von einem als SMD-Bauteil gestalteten Keramik-Package gebildet, das mit einer eine Lichtaustrittsöffnung bildenden zentralen Ausnehmung versehen ist, an deren Grund ein LED-Chip angeordnet ist. Die Abkürzung SMD steht hier für den englischen Begriff „surface mounted device”. Der LED-Chip wird über nach außen führende Zuleitungen mit Strom versorgt. Dem Schutz des LED-Chips gegen eine Beschädigung durch Überspannungen dient hier eine Zenerdiode in Form eines separaten Bauelementes.To mention is also a product on the market the company Nichia, sold under the name "Rigel" becomes. In this case, the containment means of a SMD component designed ceramic package formed with a light exit opening forming central recess is provided at the bottom of a LED chip is arranged. The abbreviation SMD stands for the English term "surface mounted device". The LED chip is going over to the outside Power supply lines. The protection of the LED chip against a Damage caused by overvoltages is used here Zener diode in the form of a separate component.
Ausgehend von der eingangs beschriebenen bekannten LED-Baueinheit liegt der Erfindung die Aufgabe zugrunde, diese konstruktiv so zu vereinfachen, dass sie unter Anwendung moderner Fertigungsmethoden einfacher und kostengünstiger hergestellt werden kann.Based on the above-described known LED assembly, the invention has for its object to simplify this constructive so They can be made easier and cheaper using modern manufacturing methods.
Die Aufgabe ist erfindungsgemäß dadurch gelöst, dass die ESD-Mittel so geformt sind, dass sie auch die Einschlussmittel bilden.The The object is achieved according to the invention that the ESD funds are shaped so that they include the containment form.
Zweckmäßigerweise wird/werden der/die LED-Chip/s auf einer Substratschicht aus elektrisch nicht leitendem Material angeordnet, wie dies auch bei der bekannten LED-Baueinheit „Rebel” von Lumileds der Fall ist.Conveniently, the LED chip (s) on a substrate layer will not become electrically conductive arranged conductive material, as with the well-known LED assembly "Rebel" of Lumileds is the case.
Zur
praktischen Ausgestaltung der erfindungsgemäßen
Lösung wird vorgeschlagen, dass die ESD-Mittel auf der
Substratschicht angeordnet und von mindestens einer ESD-Schicht
und mindestens zwei elektrisch leitenden Elektrodenschichten gebildet
sind, wobei die/jede ESD-Schicht zwischen je zwei Elektrodenschichten
eingebettet ist, von denen jeweils eine mit je einem der beiden
Stromversorgungs-Anschlüsse des/eines LED-Chips verbunden
ist,
und dass der ohmsche Widerstand der/jeder ESD-Schicht
spannungsabhängig ist, derart, dass er bei steigender Spannung
an den die betreffende ESD-Schicht einschließenden Elektrodenschichten sinkt
und bei sich vermindernder Spannung steigt.For the practical embodiment of the solution according to the invention, it is proposed that the ESD means be arranged on the substrate layer and formed by at least one ESD layer and at least two electrically conductive electrode layers, wherein the / each ESD layer is embedded between each two electrode layers, of which one each connected to one of the two power supply terminals of the / an LED chip,
and that the ohmic resistance of the / each ESD layer is voltage-dependent, such that it decreases with increasing voltage to the electrode layers enclosing the relevant ESD layer and increases with decreasing voltage.
Insbesondere dann, wenn die LED-Baueinheit mehrere LED-Chips aufweist, sollte der Rahmen zweckmäßiger Weise eine Mehrzahl von als Packet über einander angeordneten ESD-Schichten aufweisen, wobei jede ESD-Schicht jeweils zwischen zwei aus einer entsprechenden Vielzahl von elektrisch leitenden Elektrodenschichten eingebettet ist.Especially then, if the LED package has multiple LED chips, should the frame expediently a plurality of have as packet over arranged ESD layers, each ESD layer being between two of a corresponding one Embedded variety of electrically conductive electrode layers is.
Als
Material wird für die Substratschicht vorzugsweise Aluminiumnitrid
(AlN) verwendet, weil dieses trotz seiner ausgezeichneten elektrischen
Isoliereigenschaften ein sehr guter Wärmeleiter ist. Dadurch
ist es geeignet, die in dem/den LED-Chip/s erzeugte Wärme
abzuleiten. Vorteilhafterweise vereinfacht sich durch den Einsatz
einer Substratschicht aus Aluminiumnitrid (AlN) auch der Aufbau
insgesamt, da kein zusätzlicher Wärmeleiter benötigt
wird, wie er beispielsweise in
Auch für die ESD-Schicht/en verwendet man vorzugsweise Keramik-Material. Dadurch ergibt sich die Möglichkeit, für die Herstellung der LED-Baueinheit die LTCC-Technologie anzuwenden. Die Abkürzung LTCC steht hier für den englischen Begriff „low temperature cofired ceramics” (Niedertemperatur-Sintertechnik).Also For the ESD layer (s) one preferably uses ceramic material. This gives the possibility for the production the LED assembly to apply the LTCC technology. The abbreviation LTCC stands for the English term "low temperature cofired ceramics "(low-temperature sintering technology).
Eine
andere zweckmäßige Weiterbildung kann darin bestehen,
dass auf die Unterseite der Substratschicht Leiterbahnen in Form
einer Lötmetall-Schicht aufgebracht sind,
dass die
Substratschicht mit Durchkontaktierungs-Löchern versehen
ist,
dass zwischen der Substratschicht und dem/den LED-Chip/s
eine Leiterbahnen bildende Leiterschicht angeordnet ist,
dass
die Leiterbahnen der Leiterschicht mit den entsprechenden Leiterbahnen
an der Unterseite der Substratschicht über die Durchkontaktierungs-Löcher
elektrisch verbunden sind, und dass die Elektroden des/der LED-Chips
mit den entsprechenden Leiterbahnen auf der Oberseite der Substratschicht elektrisch
verbunden sind.Another expedient refinement may be that conductor tracks in the form of a solder layer are applied to the underside of the substrate layer,
the substrate layer is provided with via holes,
in that a conductor layer-forming conductor layer is arranged between the substrate layer and the LED chip (s),
in that the conductor tracks of the conductor layer are electrically connected to the corresponding conductor tracks on the underside of the substrate layer via the via holes, and that the electrodes of the LED chip (s) are electrically connected to the corresponding conductor tracks on the upper side of the substrate layer.
Die Elektrodenschichten werden zweckmäßigerweise mit den entsprechenden Leiterbahnen an der Oberseite der Substratschicht elektrisch verbunden.The Electrode layers are expediently with the corresponding conductor tracks at the top of the substrate layer electrically connected.
Um den/die LED-Chip/s zu schützen und um das von diesem/diesen abgestrahlte Licht möglichst gut zu reflektieren, kann oben auf den Rahmen noch ein Deckrahmenteil aus Aluminium (Al) oder Aluminiumdioxid (Al2O3) aufgesetzt werden.In order to protect the LED chip (s) and to reflect the light emitted by this / these as well as possible, a cover frame part of aluminum (Al) or aluminum dioxide (Al 2 O 3 ) can be placed on top of the frame.
Ein weiterer Vorschlag zur Vereinfachung der Produktion der LED-Baueinheit besteht ferner die Möglichkeit, dass der/die LED-Chip/s als COB-Bauteil/e ausgebildet und durch COB-Technologie auch die Leiterbahnen der auf der Oberseite der Substratschicht befindlichen Leiterschicht aufgebracht wird/werden.One Another proposal to simplify the production of the LED assembly there is also the possibility that the / the LED chip / s designed as a COB component / e and by COB technology also the Conductor tracks located on the top of the substrate layer Conductor layer is / are applied.
Ein Ausführungsbeispiel der Erfindung wird nachfolgend anhand der Zeichnungen beschrieben.One Embodiment of the invention will be described below of the drawings.
Es zeigen:It demonstrate:
In
die Leiterbahnen
Der
auf die Substratplatte
In
diesem Zusammenhang sei bemerkt, dass das Muster der Leiterbahnen
Über
den beiden Stapeln von Elektrodenschichten
Ganz
oben bildet den Abschluss das bereits erwähnte Deckrahmenteil
Die
Elektroden-Schichten
Die
in obigem Absatz beschriebene Anordnung findet auch bei dem zweiten
Stapel von Elektrodenschichten
Die
ESD-Schichten
Durch
Verwendung von Keramik-Material mit den vorstehend beschriebenen
Eigenschaften ist es möglich, das LED-Bauteil
ZITATE ENTHALTEN IN DER BESCHREIBUNGQUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- - US 2008/0142831 A1 [0003] US 2008/0142831 A1 [0003]
- - US 2008/025449 A1 [0004, 0006, 0014] US 2008/025449 A1 [0004, 0006, 0014]
- - EP 1858033 A1 [0005] EP 1858033 A1 [0005]
- - US 2008/0224815 A1 [0006, 0006] US 2008/0224815 A1 [0006, 0006]
Claims (15)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010001791A DE102010001791A1 (en) | 2009-02-16 | 2010-02-11 | LED-assembly, has light emission opening unsealed by enclosing unit, and electro static discharging units formed in such manner such that discharging units made up of ceramic material form enclosing unit |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009009185.8 | 2009-02-16 | ||
DE102009009185 | 2009-02-16 | ||
DE102010001791A DE102010001791A1 (en) | 2009-02-16 | 2010-02-11 | LED-assembly, has light emission opening unsealed by enclosing unit, and electro static discharging units formed in such manner such that discharging units made up of ceramic material form enclosing unit |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102010001791A1 true DE102010001791A1 (en) | 2010-09-30 |
Family
ID=42664201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102010001791A Withdrawn DE102010001791A1 (en) | 2009-02-16 | 2010-02-11 | LED-assembly, has light emission opening unsealed by enclosing unit, and electro static discharging units formed in such manner such that discharging units made up of ceramic material form enclosing unit |
Country Status (1)
Country | Link |
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DE (1) | DE102010001791A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012104494A1 (en) * | 2012-05-24 | 2013-11-28 | Epcos Ag | light emitting diode device |
GB2545728A (en) * | 2015-12-23 | 2017-06-28 | Tech Invest Ltd | A rolling chassis assembly for a vehicle |
CN112738994A (en) * | 2020-11-24 | 2021-04-30 | 鹤山市世拓电子科技有限公司 | Printed circuit board with embedded power device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1858033A1 (en) | 2005-04-01 | 2007-11-21 | Matsushita Electric Industrial Co., Ltd. | Varistor and electronic component module using same |
US20080025449A1 (en) | 2004-05-12 | 2008-01-31 | Ivonete Markman | Dual Mode Sync Generator in an Atsc-Dtv Receiver |
US20080142831A1 (en) | 2006-12-18 | 2008-06-19 | Lighthouse Technology Co., Ltd | Package structure |
US20080224815A1 (en) | 2007-03-13 | 2008-09-18 | Tatsuya Inoue | Electrostatic discharge protection component, and electronic component module using the same |
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2010
- 2010-02-11 DE DE102010001791A patent/DE102010001791A1/en not_active Withdrawn
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US20080025449A1 (en) | 2004-05-12 | 2008-01-31 | Ivonete Markman | Dual Mode Sync Generator in an Atsc-Dtv Receiver |
EP1858033A1 (en) | 2005-04-01 | 2007-11-21 | Matsushita Electric Industrial Co., Ltd. | Varistor and electronic component module using same |
US20080142831A1 (en) | 2006-12-18 | 2008-06-19 | Lighthouse Technology Co., Ltd | Package structure |
US20080224815A1 (en) | 2007-03-13 | 2008-09-18 | Tatsuya Inoue | Electrostatic discharge protection component, and electronic component module using the same |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012104494A1 (en) * | 2012-05-24 | 2013-11-28 | Epcos Ag | light emitting diode device |
US9449958B2 (en) | 2012-05-24 | 2016-09-20 | Epcos Ag | Light-emitting diode device |
GB2545728A (en) * | 2015-12-23 | 2017-06-28 | Tech Invest Ltd | A rolling chassis assembly for a vehicle |
GB2545728B (en) * | 2015-12-23 | 2021-04-21 | Timoney Dynamic Solutions Ltd | A rolling chassis assembly for a vehicle |
CN112738994A (en) * | 2020-11-24 | 2021-04-30 | 鹤山市世拓电子科技有限公司 | Printed circuit board with embedded power device |
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