DE102009007940B4 - Non-conductive zirconium oxide - Google Patents
Non-conductive zirconium oxide Download PDFInfo
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- DE102009007940B4 DE102009007940B4 DE102009007940A DE102009007940A DE102009007940B4 DE 102009007940 B4 DE102009007940 B4 DE 102009007940B4 DE 102009007940 A DE102009007940 A DE 102009007940A DE 102009007940 A DE102009007940 A DE 102009007940A DE 102009007940 B4 DE102009007940 B4 DE 102009007940B4
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
- G01K7/183—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer characterised by the use of the resistive element
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/008—Thermistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K2205/00—Application of thermometers in motors, e.g. of a vehicle
- G01K2205/04—Application of thermometers in motors, e.g. of a vehicle for measuring exhaust gas temperature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49085—Thermally variable
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- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Electrochemistry (AREA)
- Immunology (AREA)
- Ceramic Engineering (AREA)
- Thermistors And Varistors (AREA)
- Non-Adjustable Resistors (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Widerstandsthermometer mit einem Messwiderstand in Form einer 0,1 bis 10 μm dicken strukturierten Platinschicht, die auf einer elektrisch isolierenden Oberfläche eines Substrats aufgebracht ist und mit einer elektrisch isolierenden Abdeckschicht versehen ist, dadurch gekennzeichnet, dass das Substrat Zirkoniumoxid enthält, welches mit Oxiden eines drei- und eines fünfwertigen Metalls stabilisiert ist, wobei das Substrat Zirkoniumdioxid mit 20–40 Mol-% Stabilisator aufweist.Resistance thermometer with a measuring resistor in the form of a 0.1 to 10 .mu.m thick structured platinum layer, which is applied to an electrically insulating surface of a substrate and provided with an electrically insulating cover layer, characterized in that the substrate contains zirconium oxide, which with oxides of a three and a pentavalent metal, the substrate comprising zirconia with 20-40 mole% stabilizer.
Description
Die Erfindung betrifft ein Widerstandsthermometer mit einem Messwiderstand in Form einer im wesentlichen aus einem Metall der Platingruppe bestehenden Widerstandsschicht in einer Dicke von 0,1 bis 10 μm, die auf einer elektrisch isolierenden Oberfläche eines Trägers mit einem Wärmeausdehnungskoeffizienten im Bereich von 8,5 bis 10,5 ppm/K aufgebracht ist und mit einer elektrisch isolierenden Abdeckschicht versehen ist.The The invention relates to a resistance thermometer with a measuring resistor in the form of a substantially of a platinum group metal existing resistance layer in a thickness of 0.1 to 10 microns, the on an electrically insulating surface of a carrier with a thermal expansion coefficient in the range of 8.5 to 10.5 ppm / K is applied and with a is provided electrically insulating cover layer.
Die Aufgabe der vorliegenden Erfindung besteht darin, unter Beibehaltung der Langzeitstabilität oberhalb von 500°C eine verbesserte Reproduzierbarkeit und eine verbesserte Ausbeute in der Produktion zu erreichen.The Object of the present invention is while retaining the long-term stability above of 500 ° C improved reproducibility and improved yield to achieve in production.
Zur Lösung der Aufgabe wird eine Widerstandsschicht aus Platin auf einem Zirkonoxidsubstrat aufgetragen, welches mit einem drei- und einem fünfwertigen Metall stabilisiert ist, beispielsweise mit Yttrium und Tantal.to solution The object is a resistance layer of platinum on a Zirkonoxidsubstrat applied, which stabilized with a trivalent and a pentavalent metal is, for example with yttrium and tantalum.
Die Lösung der Aufgabe erfolgt mit den Merkmalen der unabhängigen Ansprüche. Bevorzugte Ausführungen sind in den abhängigen Ansprüchen beschrieben.The solution The object is achieved with the features of the independent claims. preferred versions are in the dependent Claims described.
Erfindungsgemäß wird die Erzeugung exakterer und reproduzierbarerer Strukturen ermöglicht.According to the invention Producing more accurate and reproducible structures allows.
Damit einhergehend werden genauere und reproduzierbarere Messungen ermöglicht. Diese Vorteile kommen insbesondere feineren Strukturen zugute. Damit zusammenhängend sind feinere Strukturen gegenüber Substraten auf Magnesiumtitanat-Basis konstruierbar.In order to In addition, more accurate and reproducible measurements are made possible. These advantages are particularly beneficial to finer structures. In order to coherently are compared to finer structures Magnesium titanate-based substrates can be constructed.
Die hohe Reproduzierbarkeit und Genauigkeit werden durch eine glatte Oberfläche des Substrats ermöglicht. Vorzugsweise weist das Gefüge des Substrats hierzu eine Körnung mit einer durchschnittlichen Korngröße unter 1,5 μm auf. Bei üblicherweise mit Yttrium stabilisiertem Zirkoniumdioxid als Substrat wird die Sauerstoffleitfähigkeit durch Zugabe von Tantal oder Niob unterdrückt. Anstatt Yttrium sind auch andere zwei- oder dreiwertige Metalle wie z. B. Scandium zur Stabilisierung einsetzbar. Die hohe Bruchfestigkeit wird durch einen Gehalt von 20–40 Mol-% Stabilisator, bezogen auf den gesamten Metallgehalt, insbesondere 25–35 Mol-%, erreicht, weil die Hochtemperatur-tetragonale Phase des Zirkoniumdioxids erhalten bleibt. Die mechanische Festigkeit wird auch durch Dotierung mit HfO2 auf über 250 MPa gesteigert.The high reproducibility and accuracy are made possible by a smooth surface of the substrate. For this purpose, the structure of the substrate preferably has a grain size with an average grain size of less than 1.5 μm. With zirconia usually stabilized with yttrium as the substrate, the oxygen conductivity is suppressed by adding tantalum or niobium. Instead of yttrium, other divalent or trivalent metals such. B. Scandium used for stabilization. The high breaking strength is achieved by a content of 20-40 mol% stabilizer, based on the total metal content, in particular 25-35 mol%, because the high-temperature tetragonal phase of the zirconium dioxide is retained. The mechanical strength is also increased by doping with HfO 2 to more than 250 MPa.
Insbesondere reproduziert sich bezüglich eines Platin-Messwiderstands die Kennlinie für Platin gemäß DIN IEC 751.Especially reproduces with respect of a platinum measuring resistor the characteristic curve for platinum according to DIN IEC 751st
Vorzugsweise wird der Messwiderstand durch eine Abdeckung geschützt, insbesondere aus Glas oder einem mit Glaslot befestigten Keramikplättchen, vorteilhafterweise aus dem gleichen Material wie das Substrat.Preferably the measuring resistor is protected by a cover, in particular made of glass or a ceramic tile attached to glass solder, advantageously of the same material as the substrate.
Es ist sehr nützlich, dass ein erfindungsgemäßes Messelement die DIN-IEC-Kennlinie im Bereich von –200°C bis 850°C wiedergibt. Insbesondere ist bei einer Temperaturbelastung über 500°C eine hohe Standzeit erzielbar.It is very useful that a measuring element according to the invention the DIN-IEC characteristic in the range of -200 ° C to 850 ° C reproduces. In particular at a temperature load over 500 ° C a high Service life achievable.
Ein
bei Temperaturen über
500°C elektrisch isolierendes
stabilisiertes Zirkoniumdioxid weist mindestens zwei Metalloxide
auf, die eine von der Wertigkeit
Die Eignung für die Massenproduktion mit erfindungsgemäß hoher Messgenauigkeit bei hervorragender Reproduzierbarkeit zwischen 300°C und 1000°C, insbesondere über 500°C, drängt insbesondere bei hoher Temperaturschockresistenz Anwendungen in der Abgasbehandlung auf. Im Anwendungsbereich zwischen 300°C und 700°C besteht eine ausgezeichnete Langzeitstabilität.The Fitness for the mass production with high measurement accuracy according to the invention Excellent reproducibility between 300 ° C and 1000 ° C, especially over 500 ° C, in particular urges with high temperature shock resistance applications in exhaust gas treatment on. In the range of application between 300 ° C and 700 ° C there is an excellent Long-term stability.
Es wird auch ein stoffsensitiver Sensor bereitgestellt, der eine Leiterbahnstruktur auf einem Substrat aufweist, wobei erfindungsgemäß die Leiterbahnstruktur eine epitaktisch aufgetragene Grundschicht aufweist und eine auf der epitaktisch aufgetragenen Grundschicht befestigte stoffsensitive Metallschicht.There is also provided a cloth-sensitive sensor having a wiring pattern on one Substrate having, according to the invention, the conductor track structure has an epitaxially applied base layer and a mounted on the epitaxially applied base layer fabric-sensitive metal layer.
Insbesondere
- • ist die Grundschicht eine epitaktisch aufgetragene Platin- oder Iridiumschicht;
- • ist das Substrat ein Saphir;
- • ist das sensitive Metall ausgewählt aus der Gruppe Gold, Silber, Kupfer, Nickel, Palladium, Platin, Iridium, Ruthenium, Kobalt, Eisen, Ruthenium, Rhenium und Mangan;
- • ist die sensitive Schicht unter 8 nm, insbesondere unter 5 nm dick (optimal wäre eine Atomlage dick).
- • the base layer is an epitaxially applied platinum or iridium layer;
- • the substrate is a sapphire;
- • the sensitive metal is selected from the group gold, silver, copper, nickel, palladium, platinum, iridium, ruthenium, cobalt, iron, ruthenium, rhenium and manganese;
- • the sensitive layer is below 8 nm, in particular below 5 nm thick (an atomic layer would be optimal).
Ausführungsbeispiel 1embodiment 1
Auf
die Oberfläche
Die
verhältnismäßig empfindliche
und katalytisch aktive Platin-Widerstandsschicht
Die
Anschlusskontakte
Ausführungsbeispiel 2:embodiment 2:
Ein Saphirsubstrat mit einer 5 nm dicken Platinschicht ist mit 2 nm Gold beschichtet. Gold ist in dieser Schichtstärke nicht mehr eine homogene Schicht, sondern inhomogen auf der Platinschicht belegt mit einer rechnerisch durchschnittlichen Schichtdicke von 2 nm. Die Goldschicht ist maßgeblich für die Leitfähigkeit und damit auch die Umgebung der Goldschicht. Diese Goldschicht weist eine besonders hohe Sensitivität bezüglich organischer Moleküle auf ihrer der Platinschicht entgegengesetzten Seite auf. In einer bevorzugten Ausführung wird auf der Goldschicht eine weitere Schicht aufgetragen, insbesondere aus organischen Molekülen, die durch Wechselwirkung mit anderen Stoffen die Sensitivität verbessert. Hierbei wird einerseits die Sensitivität bestimmter Stoffe erhöht und andererseits die Bandbreite der sensitiv messbaren Stoffe erhöht. Beispielsweise wird mit einer Tierharnstoffschicht die pH-Sensitivität des Sensors gesteigert.One Sapphire substrate with a 5 nm thick platinum layer is 2 nm Gold coated. Gold is no longer a homogeneous layer in this layer thickness, but inhomogeneous on the platinum layer evidenced with a mathematical average layer thickness of 2 nm. The gold layer is decisive for the conductivity and with it the surroundings of the gold layer. This gold layer points a particularly high sensitivity in terms of organic molecules on its side opposite the platinum layer. In a preferred embodiment is applied to the gold layer another layer, in particular from organic molecules, which, by interacting with other substances, improves the sensitivity. On the one hand, the sensitivity of certain substances is increased and, on the other hand increased the range of sensitively measurable substances. For example, with an animal urea layer increases the pH sensitivity of the sensor.
In einer weiteren bevorzugten Ausführung wird die Konkurrenzreaktion unterschiedlicher Adsorbate an der Goldfläche dadurch ausgenutzt, dass die Änderung der Leitfähigkeit bei der Belegung mit einem Stoff, wie z. B. Cystein, auch davon abhängt, wie weit bereits eine Belegung durch konkurrierende Adsorbate vorhanden ist. Insbesondere ermöglicht diese letzte Technik neben der qualitativen Bestimmung auch eine besonders gute quantitative Bestimmung.In Another preferred embodiment the competitive reaction of different adsorbates on the gold surface thereby exploited that change the conductivity when occupying with a substance, such. As cysteine, even of it depends how already occupied by competing adsorbates is. In particular, this allows last technique besides the qualitative determination also a special one good quantitative determination.
Claims (8)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009007940A DE102009007940B4 (en) | 2009-02-06 | 2009-02-06 | Non-conductive zirconium oxide |
KR1020117020325A KR101456743B1 (en) | 2009-02-06 | 2010-01-20 | Resistance thermometer comprising non-conducting zirconium dioxide |
PCT/EP2010/000307 WO2010089024A2 (en) | 2009-02-06 | 2010-01-20 | Non-conducting zirconium dioxide |
US13/146,529 US8730002B2 (en) | 2009-02-06 | 2010-01-20 | Non-conducting zirconium dioxide |
EP10702032.3A EP2394148B1 (en) | 2009-02-06 | 2010-01-20 | Resistance thermometer comprising non-conducting zirconium dioxide |
JP2011548568A JP5425225B2 (en) | 2009-02-06 | 2010-01-20 | Non-conductive zirconium dioxide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE102009007940A DE102009007940B4 (en) | 2009-02-06 | 2009-02-06 | Non-conductive zirconium oxide |
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DE102009007940A1 DE102009007940A1 (en) | 2010-09-30 |
DE102009007940B4 true DE102009007940B4 (en) | 2010-11-18 |
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DE102009007940A Active DE102009007940B4 (en) | 2009-02-06 | 2009-02-06 | Non-conductive zirconium oxide |
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US (1) | US8730002B2 (en) |
EP (1) | EP2394148B1 (en) |
JP (1) | JP5425225B2 (en) |
KR (1) | KR101456743B1 (en) |
DE (1) | DE102009007940B4 (en) |
WO (1) | WO2010089024A2 (en) |
Cited By (2)
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DE102012110210A1 (en) * | 2012-10-25 | 2014-04-30 | Heraeus Sensor Technology Gmbh | High temperature chip with high stability |
DE202019002164U1 (en) | 2019-05-17 | 2019-06-21 | Heraeus Nexensos Gmbh | Improved high temperature chip |
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DE102011052365B4 (en) * | 2011-08-02 | 2017-02-09 | Heraeus Sensor Technology Gmbh | Microstructured hot stamp |
DE102014112129A1 (en) * | 2014-08-25 | 2016-02-25 | Hans Heidolph Gmbh & Co. Kg | glass vessel |
KR101621231B1 (en) * | 2015-02-12 | 2016-06-01 | 인하대학교 산학협력단 | Temperature-measurement device comprising the nickel temperature measurement resistor sensor |
DE102015223950A1 (en) * | 2015-12-01 | 2017-06-01 | TE Connectivity Sensors Germany GmbH | Substrate for a sensor arrangement for a resistance thermometer, sensor arrangement, resistance thermometer and method for producing such a substrate |
DE102016201343B4 (en) * | 2016-01-29 | 2023-09-21 | Emisense Technologies Llc | Sensor for a motor vehicle and method for producing a sensor for a motor vehicle |
DE102016106675B3 (en) | 2016-04-12 | 2017-08-24 | Innovative Sensor Technology Ist Ag | Thin-film sensor element for a resistance thermometer |
JP2018066592A (en) * | 2016-10-17 | 2018-04-26 | Koa株式会社 | Platinum temperature sensor element |
JP6821384B2 (en) * | 2016-10-17 | 2021-01-27 | Koa株式会社 | Platinum temperature sensor element |
EP3409467B1 (en) | 2017-05-30 | 2019-07-03 | Heraeus Nexensos GmbH | Heater with a co-sintered multi-layer structure |
US11262250B2 (en) | 2018-02-28 | 2022-03-01 | Applied Materials, Inc. | Method for measuring a temperature |
EP4086599A1 (en) * | 2021-05-06 | 2022-11-09 | TE Connectivity Sensors Germany GmbH | Sensor assembly for a resistance temperature sensor element and resistance temperature sensor element |
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-
2009
- 2009-02-06 DE DE102009007940A patent/DE102009007940B4/en active Active
-
2010
- 2010-01-20 KR KR1020117020325A patent/KR101456743B1/en active IP Right Grant
- 2010-01-20 JP JP2011548568A patent/JP5425225B2/en active Active
- 2010-01-20 EP EP10702032.3A patent/EP2394148B1/en active Active
- 2010-01-20 US US13/146,529 patent/US8730002B2/en active Active
- 2010-01-20 WO PCT/EP2010/000307 patent/WO2010089024A2/en active Application Filing
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DE19540194C1 (en) * | 1995-10-30 | 1997-02-20 | Heraeus Sensor Gmbh | Resistance thermometer for accurately measuring temperatures between -200 and 500 deg. C |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012110210A1 (en) * | 2012-10-25 | 2014-04-30 | Heraeus Sensor Technology Gmbh | High temperature chip with high stability |
DE102012110210B4 (en) * | 2012-10-25 | 2017-06-01 | Heraeus Sensor Technology Gmbh | High temperature chip with high stability |
US9829390B2 (en) | 2012-10-25 | 2017-11-28 | Heraeus Sensor Technology Gmbh | High-temperature chip with high stability |
DE202019002164U1 (en) | 2019-05-17 | 2019-06-21 | Heraeus Nexensos Gmbh | Improved high temperature chip |
WO2020234097A1 (en) | 2019-05-17 | 2020-11-26 | Heraeus Nexensos Gmbh | Improved high-temperature chip |
Also Published As
Publication number | Publication date |
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KR101456743B1 (en) | 2014-10-31 |
DE102009007940A1 (en) | 2010-09-30 |
EP2394148B1 (en) | 2017-11-08 |
JP5425225B2 (en) | 2014-02-26 |
WO2010089024A2 (en) | 2010-08-12 |
US20110305259A1 (en) | 2011-12-15 |
KR20110126649A (en) | 2011-11-23 |
JP2012517004A (en) | 2012-07-26 |
WO2010089024A3 (en) | 2010-11-25 |
US8730002B2 (en) | 2014-05-20 |
EP2394148A2 (en) | 2011-12-14 |
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