DE102008034299A1 - Licht emittierendes Bauelement auf Nitridbasis - Google Patents

Licht emittierendes Bauelement auf Nitridbasis Download PDF

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Publication number
DE102008034299A1
DE102008034299A1 DE102008034299A DE102008034299A DE102008034299A1 DE 102008034299 A1 DE102008034299 A1 DE 102008034299A1 DE 102008034299 A DE102008034299 A DE 102008034299A DE 102008034299 A DE102008034299 A DE 102008034299A DE 102008034299 A1 DE102008034299 A1 DE 102008034299A1
Authority
DE
Germany
Prior art keywords
nitride
type
semiconductor layer
layer
based light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102008034299A
Other languages
German (de)
English (en)
Inventor
Jae Bin Ansan Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
Original Assignee
Seoul Optodevice Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Optodevice Co Ltd filed Critical Seoul Optodevice Co Ltd
Publication of DE102008034299A1 publication Critical patent/DE102008034299A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
DE102008034299A 2007-09-20 2008-07-23 Licht emittierendes Bauelement auf Nitridbasis Ceased DE102008034299A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2007-0096081 2007-09-20
KR1020070096081A KR20090030652A (ko) 2007-09-20 2007-09-20 질화물계 발광소자

Publications (1)

Publication Number Publication Date
DE102008034299A1 true DE102008034299A1 (de) 2009-04-02

Family

ID=40384536

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008034299A Ceased DE102008034299A1 (de) 2007-09-20 2008-07-23 Licht emittierendes Bauelement auf Nitridbasis

Country Status (4)

Country Link
US (1) US20090078961A1 (https=)
JP (1) JP2009076864A (https=)
KR (1) KR20090030652A (https=)
DE (1) DE102008034299A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017224833A (ja) * 2009-12-30 2017-12-21 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体チップおよびその製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102811157A (zh) * 2011-06-01 2012-12-05 阿尔卡特朗讯公司 流量控制方法和流量控制装置
US9159788B2 (en) 2013-12-31 2015-10-13 Industrial Technology Research Institute Nitride semiconductor structure
US9112077B1 (en) 2014-04-28 2015-08-18 Industrial Technology Research Institute Semiconductor structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980079320A (ko) * 1997-03-24 1998-11-25 기다오까다까시 고품질 쥐에이엔계층의 선택성장방법, 고품질 쥐에이엔계층 성장기판 및 고품질 쥐에이엔계층 성장기판상에 제작하는 반도체디바이스
JPH10326750A (ja) * 1997-03-24 1998-12-08 Mitsubishi Electric Corp 高品質ＧａＮ系層の選択成長方法、高品質ＧａＮ系層成長基板および高品質ＧａＮ系層成長基板上に作製した半導体デバイス

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017224833A (ja) * 2009-12-30 2017-12-21 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体チップおよびその製造方法
US10418355B2 (en) 2009-12-30 2019-09-17 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for fabrication thereof

Also Published As

Publication number Publication date
JP2009076864A (ja) 2009-04-09
US20090078961A1 (en) 2009-03-26
KR20090030652A (ko) 2009-03-25

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
R016 Response to examination communication
R002 Refusal decision in examination/registration proceedings
R006 Appeal filed
R008 Case pending at federal patent court
R082 Change of representative

Representative=s name: PATENTANWAELTE STOLMAR & PARTNER, DE

R081 Change of applicant/patentee

Owner name: SEOUL VIOSYS CO., LTD., ANSAN-SI, KR

Free format text: FORMER OWNER: SEOUL OPTO DEVICE CO. LTD., ANSAN, KYONGGI, KR

Effective date: 20140310

Owner name: SEOUL VIOSYS CO., LTD., KR

Free format text: FORMER OWNER: SEOUL OPTO DEVICE CO. LTD., ANSAN, KR

Effective date: 20140310

R082 Change of representative

Representative=s name: STOLMAR & PARTNER PATENTANWAELTE PARTG MBB, DE

Effective date: 20140310

Representative=s name: PATENTANWAELTE STOLMAR & PARTNER, DE

Effective date: 20140310

R003 Refusal decision now final
R011 All appeals rejected, refused or otherwise settled