DE102007043563A1 - Etching, galvanizing, cleaning and photoresist developing of a substrate with megasonic support, comprise carrying out megasonic excitation by standard megasonic-oscillation of cool bar- and atomizer application - Google Patents

Etching, galvanizing, cleaning and photoresist developing of a substrate with megasonic support, comprise carrying out megasonic excitation by standard megasonic-oscillation of cool bar- and atomizer application Download PDF

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DE102007043563A1
DE102007043563A1 DE102007043563A DE102007043563A DE102007043563A1 DE 102007043563 A1 DE102007043563 A1 DE 102007043563A1 DE 102007043563 A DE102007043563 A DE 102007043563A DE 102007043563 A DE102007043563 A DE 102007043563A DE 102007043563 A1 DE102007043563 A1 DE 102007043563A1
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megasonic
substrate
cleaning
etching
standard
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Guido Bell
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Bell Guido Dr
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Bell Guido Dr
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/20—Electroplating using ultrasonics, vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The etching, galvanizing, cleaning and photoresist developing of a substrate with megasonic support for the production of semiconductor, comprise carrying out megasonic excitation by standard megasonic-oscillation of cool bar- and atomizer application. The standard oscillator is used in a frequency of 0.5-4 MHz. The number and arrangement of the standard megasonic oscillator monitoring on a fixture as single or multiple block of the substrate to be processed e.g. silicon plate, photo mask, guiding plate and flat panel excite in the processing medium to be processed over a water passage. The etching, galvanizing, cleaning and photoresist developing of a substrate with megasonic support for the production of semiconductor, comprise carrying out megasonic excitation by standard megasonic-oscillation of cool bar- and atomizer application. The standard oscillator is used in a frequency of 0.5-4 MHz. The number and arrangement of the standard megasonic oscillator monitoring on a fixture as single or multiple block of the substrate to be processed e.g. silicon plate, photo mask, guiding plate and flat panel excite in the processing medium to be processed over a water passage as transferring medium. The fixture is movable with the oscillator in the water passage and the substrate to be processed relative to each other in such a way that an area of the substrate uncovered by the oscillator is guidable through back and forth movement or circulation movement so that the whole surface is covered in temporal progress of whole surface. The substrate in the process chamber is horizontally subjected with corresponding process fluid and the megasonic oscillation influences from bottom or top over the water intermediate passage or the substrate in the process chamber is vertically subjected with the corresponding process fluid and the megasonic oscillation influences vertically on substrate surface over the water intermediate passage.

Description

Beispiele für ultraschall-unterstütztes Reinigen finden sich in DE 10154922A1 für unempfindliche Stahlteile. Speziell in der Halbleitertechnik geht man bei nasstechnischen Prozessen seit einigen Jahren von der Behandlung im Ultraschall über auf eine Behandlungen bei höheren Frequenzen im unteren bis mittleren MHz-Bereich („Megasonic"). Die sich hier ausbildenden Kavitationen sind deutlich weniger energiereich, aber noch ausreichend wirksam, um den Zu- und Abtransport des Prozessmediums auch in kleinsten Strukturen zu verbessern, während die zu energiereichen Ultraschallkavitationen nicht nur Photolackstrukturen schädigen können, sondern in Halbleiterprozessen sogar Schädigungen im Siliziumkristall hervorrufen.Examples of ultrasound-assisted cleaning can be found in DE 10154922A1 for insensitive steel parts. In the field of nasal technology, especially in semiconductor technology, ultrasound treatment has been used for a few years for treatments at higher frequencies in the lower to medium MHz range ("megasonic") .The cavitations forming here are significantly less energetic but still sufficient effective to improve the supply and removal of the process medium even in the smallest structures, while the high-energy Ultraschallkavitationen not only damage photoresist structures, but in semiconductor processes even cause damage in the silicon crystal.

Typische Beispiele für den Stand der „Megasonic"-Technik sind industriell gefertigte Reinigungstanks für Siliziumwafer, die auf der Boden-Unterseite piezoelektrische Schwinger enthalten, welche das darüberstehende Reinigungsmedium anregen und so zu einem verbesserten Ablösen von an der Siliziumoberfläche anhaftenden Partikeln führen. Teilweise werden auch Doppeltanksysteme eingesetzt, bei denen der äußere Tankboden die Schwinger enthält, welche über eine Wasser-Zwischenstrecke den Boden des innen eingesetzten Tanks und damit das darin befindliche Prozessmedium anregen.typical Examples of the state of the "Megasonic" technology are industrially manufactured cleaning tanks for silicon wafers, which contain piezoelectric oscillators on the bottom, which stimulate the above cleaning medium and so for improved peeling off of the silicon surface lead to adhering particles. Partially also double tank systems become used, in which the outer tank bottom the Schwinger contains, which over a water Zwischenstrecke the bottom of the tank inside and thus the inside Stimulate process medium.

Für sehr teure Substrate wie z. B. von 300 mm Siliziumwafer wird obiges Verfahren auch als Einzelsubstrat-Bearbeitung eingesetzt. Ein typisches Beispiel hierzu ist in US 6726848 gegeben. Hier wird das Substrat senkrecht in eine schmale Küvette mit Überlauf- und Umpump-Einrichtung eingesetzt. Im unteren Teil der Küvette sitzt der die Breite des Substrats abdeckende Schwinger (hier „Megasonic-Transducer" genannt), der die Prozessflüssigkeit entlang der Vorder- und Rückseite des Substrats durch die nach oben fortschreitende Wellenfront anregt und so die Reinigungswirkung der Prozessflüssigkeit verstärkt.For very expensive substrates such. B. of 300 mm silicon wafer, the above method is also used as a single substrate processing. A typical example of this is in US 6726848 given. Here, the substrate is inserted vertically into a narrow cuvette with overflow and Umpump device. In the lower part of the cuvette sits the transducer covering the width of the substrate (here called "megasonic transducer"), which excites the process fluid along the front and back of the substrate by the wavefront propagating upwards and thus enhances the cleaning action of the process fluid.

Montage, Kontaktierung und Ansteuerung derartiger Schwinger erfordern Spezialkenntnisse, sie führen zu unverhältnismäßig hohen Kosten im Anlagenbau und zu entsprechender Abhängigkeit des Anlagenbetreibers von dem Zulieferer der Anlagenkomponente „Megasonic-Transducer".Assembly, Contacting and control of such oscillators require special knowledge, they lead to disproportionate high costs in plant construction and corresponding dependency of the Plant operator from the supplier of the plant component "Megasonic Transducer".

Der Erfindung laut Patentanspruch 1 liegt die Verwendung der in großen Stückzahlen gefertigten und damit vergleichsweise sehr preiswerten Megasonic-Schwinger zugrunde, wie sie als Vernebler in Supermarkt-Gemüsetheken, in Luftbefeuchtern und in dekorativen Zimmerbrunnen Verwendung finden. Diese Vernebler werden im Fachhandel komplett montiert inclusive Transformator geliefert, so dass sie ohne elektrische Kenntnisse betrieben werden können. Sie enthalten zudem eine Kontroll-LED zur Anzeige des Betriebs und einen Füllstand-Sensor, der bei nicht genügender Wasserhöhe über dem Schwinger abschaltet.Of the Invention according to claim 1 is the use of large in size Quantities manufactured and thus comparatively much Cheap Megasonic vibrators underlay them as nebulizers in supermarket vegetable counters, humidifiers and decorative ones Zimmerbrunnen find use. These nebulizers are in the specialized trade completely assembled including transformer supplied, so they without electrical knowledge can be operated. They contain In addition, a control LED to indicate the operation and a level sensor, the over at insufficient water level the oscillator off.

Der Betreiber kann somit den Betriebszustand einfach kontrollieren. Es besteht weiterhin die Möglichkeit, mit kommerziell erhältlichen Schalldruck-Messgeräten die Schwingerintensität quantitativ festzustellen, so dass somit bei ungenügender Intensität der komplette Schwinger ohne Fachkenntnisse ausgetauscht werden kann.Of the Operator can thus easily control the operating state. There is still the possibility of using commercially available Sound pressure gauges the vibration intensity determine quantitatively, so that when insufficient Intensity of the complete oscillator without expertise can be exchanged.

Beispiele für derartige Schwinger finden sich in den Katalogen des Elektronikhandels, z. B. bei der Fa. Conrad-Electronic, Katalog „Business, Faszination Elektronik und Technik", 2007/2008, Seite 706, Rubrik „Mini-Nebler" , siehe anliegende Kopie der Seite mit je einem Beispiel für einen Einzelschwinger und eine 3er-Anordnung.Examples of such oscillators can be found in the catalogs of the electronics trade, z. B. in the Fa. Conrad-Electronic, Catalog "Business, Fascination Electronics and Technology", 2007/2008, page 706, rubric "Mini-Nebler" , see enclosed copy of the page, each with an example of a single oscillator and a 3-way arrangement.

Die Schwinger werden üblicherweise mit hoher Leistungsdichte von um 20–24 Watt/cm2 (Eingangsleistung) betrieben. Ein zuviel an Intensität kann mittels verlängerter Lauflänge in der Wasserstrecke auf das prozessverträgliche Maß herabgesetzt werden bzw. durch in die Wasserstrecke eingehängt Platten, so dass sich damit auch eine Streuung bzw. Aufweitung des Wirkungswinkels ergibt.The oscillators are usually operated with high power density of 20-24 watts / cm 2 (input power). Too much intensity can be reduced by means of extended run length in the water route to the process-compatible level or by suspended in the waterway plates, so that there is also a scattering or widening of the angle of action.

Zeichnung 1 zeigt einen Einzel-Vernebler mit typischen Dimensionen des Metallrundlings von ca 40 mm Querschnitt, ca. 30 mm Höhe und ca. 15 mm Durchmesser des Schwingerfensters mit der relativ gerichteten Ausbreitung der Schwingungen im Wasser.drawing Figure 1 shows a single nebulizer with typical dimensions of the metal round of about 40 mm cross-section, about 30 mm high and about 15 mm in diameter the oscillator window with the relatively directed propagation of Vibrations in the water.

Zeichnung 2 zeigt eine vertikal angeordnete schmale Küvette als Prozesskammer in geeigneter Wandstärke aus z. B. Edelstahlblech, Glas, Keramik oder Quarz je nach Prozesschemie mit einer senkrecht auf die Vorderseite wirkenden Schwingeranordnung, die das Substrat in der Prozesskammer durch eine Hin-/Herbewegung abdeckt.drawing 2 shows a vertically arranged narrow cuvette as a process chamber in a suitable wall thickness of z. Stainless steel sheet, glass, Ceramic or quartz depending on process chemistry with a perpendicular to the front-acting oscillator assembly, the substrate in the process chamber covers by a reciprocating motion.

ZITATE ENTHALTEN IN DER BESCHREIBUNGQUOTES INCLUDE IN THE DESCRIPTION

Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.

Zitierte PatentliteraturCited patent literature

  • - DE 10154922 A1 [0001] - DE 10154922 A1 [0001]
  • - US 6726848 [0003] - US 6726848 [0003]

Zitierte Nicht-PatentliteraturCited non-patent literature

  • - Fa. Conrad-Electronic, Katalog „Business, Faszination Elektronik und Technik", 2007/2008, Seite 706, Rubrik „Mini-Nebler" [0007] - Fa. Conrad-Electronic, Catalog "Business, Fascination Electronics and Technology", 2007/2008, page 706, rubric "Mini-Mist" [0007]

Claims (7)

Ätzen, Galvanisieren, Reinigen und Photolack-Entwickeln mit Megasonic-Unterstützung, dadurch gekennzeichnet, dass die Megasonic-Anregung mittels handelsüblicher Megasonic-Schwinger aus der Kühltheken- und Vernebler-Anwendung erfolgt.Etching, electroplating, cleaning and photoresist development with Megasonic support, characterized in that the Megasonic excitation by means of commercially available Megasonic oscillator from the refrigerated display and nebulizer application. Ätzen, Galvanisieren, Reinigen und Photolack-Entwickeln mit Megasonic-Unterstützung nach Patentanspruch 1, dadurch gekennzeichnet, dass handelsübliche Schwinger im Frequenzbereich 0,5 bis 4 MHz eingesetzt werden.Etching, electroplating, cleaning and photoresist development with Megasonic support according to claim 1, characterized characterized in that commercial oscillator in the frequency domain 0.5 to 4 MHz can be used. Ätzen, Galvanisieren, Reinigen und Photolack-Entwickeln mit Megasonic-Unterstützung nach Patentanspruch 1 und 2, dadurch gekennzeichnet, dass die Anzahl und Anordnung der auf einer Halterung montierten handelsüblichen Megasonic-Schwinger als Einzelgeräte oder Mehrfachblöcke das in dem dafür geeigneten Prozessmedium zu bearbeitende Substrat (z. B. Silizium-Scheibe, Photomaske, Leiterplatte, Flat-Panel) über eine Wasserstrecke als Übertragermedium anregen.Etching, electroplating, cleaning and photoresist development with Megasonic support according to claim 1 and 2, characterized in that the number and arrangement of the on a Mount mounted commercial Megasonic transducer as single devices or multiple blocks in the for suitable process medium to be processed substrate (eg silicon disk, photomask, printed circuit board, flat panel) stimulate a waterway as a transfer medium. Ätzen, Galvanisieren, Reinigen und Photolack-Entwickeln mit Megasonic-Unterstützung nach Patentanspruch 1–3, dadurch gekennzeichnet, dass die Halterung mit den Schwingern in der Wasserstrecke und das zu bearbeitende Substrat relativ zueinander bewegt werden, so dass eine nicht von den Schwingern abgedeckte Fläche des Substrats durch Hin- und Herbewegung oder Kreisbewegung abgefahren wird und somit im zeitlichen Verlauf ganzflächig abgedeckt wird.Etching, electroplating, cleaning and photoresist development with Megasonic support according to claim 1-3, characterized in that the holder with the vibrators in the water path and the substrate to be processed relative to each other be moved so that one not covered by the vibrators Surface of the substrate by reciprocation or circular motion is traversed and thus over the entire surface over time is covered. Ätzen, Galvanisieren, Reinigen und Photolack-Entwickeln mit Megasonic-Unterstützung nach Patentanspruch 1–4, dadurch gekennzeichnet, dass das Substrat in der Prozesskammer mit der entsprechenden Prozessflüssigkeit horizontal angebracht ist und die Megasonic-Schwingung von unten über die Wasser-Zwischenstrecke einwirkt.Etching, electroplating, cleaning and photoresist development with Megasonic support according to claim 1-4, characterized in that the substrate in the process chamber with the appropriate process fluid mounted horizontally is and the Megasonic vibration from the bottom over the water intermediate route acts. Ätzen, Galvanisieren, Reinigen und Photolackentwickeln mit Megasonic-Unterstützung nach Patentanspruch 1–4, dadurch gekennzeichnet, dass das Substrat in der Prozesskammer mit der entsprechenden Prozessflüssigkeit horizontal angebracht ist und die Megasonic-Schwingung von oben über die Wasser-Zwischenstrecke einwirkt.Etching, electroplating, cleaning and photoresist development with Megasonic support according to claim 1-4, characterized in that the substrate in the process chamber with the appropriate process fluid mounted horizontally is and the Megasonic oscillation from above over the water intermediate route acts. Ätzen, Galvanisieren, Reinigen und Photolackentwickeln mit Megasonic-Unterstützung nach Patentanspruch 1–4, dadurch gekennzeichnet, dass das Substrat in der Prozesskammer mit der entsprechenden Prozessflüssigkeit vertikal angebracht ist und die Megasonic-Schwingung senkrecht auf Substratoberfläche über die Wasser-Zwischenstrecke einwirkt.Etching, electroplating, cleaning and photoresist development with Megasonic support according to claim 1-4, characterized in that the substrate in the process chamber with the appropriate process liquid mounted vertically is and the megasonic oscillation is perpendicular to the substrate surface the water intermediate route acts.
DE102007043563A 2007-09-13 2007-09-13 Etching, galvanizing, cleaning and photoresist developing of a substrate with megasonic support, comprise carrying out megasonic excitation by standard megasonic-oscillation of cool bar- and atomizer application Withdrawn DE102007043563A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012035172A3 (en) * 2010-09-17 2012-12-27 Hochschule Für Angewandte Wissenschaften Fachhochschule Coburg Assembly and method for influencing the kinetics of chemical reactions by means of acoustic surface waves

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10154922A1 (en) 2001-11-08 2003-05-28 Benteler Automobiltechnik Gmbh Process for cleaning metallic components
US6726848B2 (en) 2001-12-07 2004-04-27 Scp Global Technologies, Inc. Apparatus and method for single substrate processing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10154922A1 (en) 2001-11-08 2003-05-28 Benteler Automobiltechnik Gmbh Process for cleaning metallic components
US6726848B2 (en) 2001-12-07 2004-04-27 Scp Global Technologies, Inc. Apparatus and method for single substrate processing

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Fa. Conrad-Electronic, Katalog "Business, Faszination Elektronik und Technik", 2007/2008, Seite 706, Rubrik "Mini-Nebler"

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012035172A3 (en) * 2010-09-17 2012-12-27 Hochschule Für Angewandte Wissenschaften Fachhochschule Coburg Assembly and method for influencing the kinetics of chemical reactions by means of acoustic surface waves

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