DE102007038726A1 - Thin-layer thermocouple arrangement useful in thermo-generator to generate electrical energy from thermal energy, comprises thermocouple arranged on base layer with connection point and measuring point, and passivation layer on a top side - Google Patents

Abstract

The thin-layer thermocouple arrangement useful in a thermo-generator for generating electrical energy from thermal energy, comprises a thermocouple arranged on a base layer (1) with a connection point (3) and a measuring point (4) for generating an electrical voltage at the connection point with a temperature difference between the connection point and measuring point, a passivation layer on a top side, a substrate arranged below the base layer in partial regions, and a silicon oxide layer arranged between the substrate and the base layer and having a thickness of 500 nm. The thin-layer thermocouple arrangement useful in a thermo-generator for generating electrical energy from thermal energy, comprises a thermocouple arranged on a base layer (1) with a connection point (3) and a measuring point (4) for generating an electrical voltage at the connection point with a temperature difference between the connection point and measuring point, a passivation layer on a top side, a substrate arranged below the base layer in partial regions, and a silicon oxide layer arranged between the substrate and the base layer and having a thickness of 500 nm. The thermocouple comprises a first path (5), and a second path (6), which extends itself between the connection point and the measuring point. The paths are connected with one another at the measuring point over a diffusion barrier. The first path and/or the second path, the passivation layer and the base layer have a thickness of 300 nm. The diffusion barrier has a thickness of 40 nm. The passivation layer is applied by a low pressure chemical vapor deposition process at 800-850[deg] C. Several thermocouples are arranged in a row. Two adjacent thermocouples are connected with one another in the row, so that the ends of the first path of the one of the adjacent thermocouple are electrically connected together with the ends of the second path of the other adjacent thermocouple over the diffusion barrier. The ends of the first and second paths lie at the connection point. Independent claims are included for: (1) a thermoelectric sensor; and (2) a method for producing a thermocouple arrangement.

Description

The The invention relates to a thin-film thermocouple assembly and a thermoelectric sensor or a thermal generator and a method of manufacturing a thin-film thermocouple assembly.

thermocouples are used in a variety of technical applications. These Thermocouples are based on the physical Seebeck effect, according to the due to a temperature difference in an electrical conductor electrical Voltage is generated. To use this effect are thermocouples made of two different conductive materials (electrical conductors or semiconductors), which extends from a connection point extend to a measuring point. The different leaders Materials are connected to each other at the measuring point. kick a temperature difference between measuring point and connection point On, a corresponding thermoelectric voltage is applied at the connection point generated, which can be measured.

nowadays are usually miniaturized thermocouples in the form of thin-film thermocouples used in those with corresponding processes of semiconductor technology the electrically conductive materials for forming the thermocouples be applied to a base layer. Such thin-film thermocouples often include polycrystalline silicon, which with a metallic material is connected at the measuring point. conventional Thin-film thermocouples comprising polysilicon can used only in a limited temperature range In particular, it is not possible such thermocouples at very high temperatures, in particular above 500 ° C. and more, because this is a change in the Material properties of the thermocouples, z. By diffusion, would lead.

Out Document [1] is a temperature-resistant thermocouple comprising transition metal silicides known, this thermocouple not silicon as electrical conductive material for generating a thermoelectric voltage used. In a heat treatment during production the thermocouple is the oxidation of the silicon in the metal silicide to silica, whereas the transition metal atoms do not be oxidized. As a result, a silicon oxide layer on the Metal silicide of the thermocouple formed.

task The invention is a thin-film thermocouple assembly and to provide a corresponding thermoelectric sensor, which high temperature stable thermocouples made of silicon and a contain metallic material. Furthermore, it is an object of the invention a method for producing such a thermocouple assembly to accomplish.

These Task is by the independent claims solved. Further developments of the invention are in the dependent Claims defined.

The Thin-film thermocouple arrangement according to the invention includes at least one thermocouple disposed on a base layer with a Anschlussstel le and a measuring point to produce a electrical voltage at the junction at a temperature difference between connection and measuring point. The at least one thermocouple comprises a first sheet of silicon and a second sheet of metallic Material, which is between the connection point and the measuring point extend, wherein the first path and the second path over a diffusion barrier at least at the measuring point with each other are connected. The invention is characterized by the use a diffusion barrier, which allows that used the thermocouple assembly at very high temperatures can be, where in conventional thermocouples a diffusion at the contact points between the metallic material and the silicon occurs.

In A preferred embodiment comprises the first web the thermocouple in the thermocouple arrangement according to the invention Polysilicon, d. H. polycrystalline silicon. The second track can comprise any metal or metal alloy, In particular, titanium and / or tungsten titanium and / or tungsten can be used. However, it may also be used other metals become. Particularly suitable is the use of tungsten titanium which is essentially 90% by volume tungsten and 10% by volume Titanium or substantially 90% by weight tungsten and 10% by weight Contains titanium. As diffusion barriers are particularly suitable Titanium nitride and / or titanium and / or titanium silicide. A possible Combination here is the use of tungsten titanium as material for the second web and titanium nitride as a diffusion barrier or the use of titanium as a second web and titanium silicide as Diffusion barrier. If titanium nitride is used as a diffusion barrier, come in the compound to 21 parts of titanium preferably 25.5 parts Nitrogen.

In a further embodiment of the arrangement according to the invention, the first web and / or the second web each have a thickness substantially between 100 and 1000 nm (nm = nanometer), in particular substantially 300 nm. The layer thickness of the diffusion barrier is preferably essentially between 10 and 100 nm, in particular at substantially 40 nm.

In a particularly preferred embodiment of the invention Arrangement is a passivation layer on top of the device provided, which includes, for example, silicon nitride. The fat the passivation layer is preferably substantially between 100 and 1000 nm, in particular, the thickness is substantially 300 nm. By using the passivation layer becomes another Advantage of the arrangement over known arrangements achieved. Especially For example, the passivation layer may be formed by an LPCVD process (LPCVD = Low Pressure Chemical Vapor Disposition) at high temperatures of essentially 500 ° C and more, especially between 800 and 850 ° C, are applied. This leads to a high mechanical stability of the thermocouple arrangement with few defects in the passivation layer as well as one high chemical resistance of the arrangement. In conventional Thermocouples must have such a passivation layer at lower Temperatures are applied, otherwise it will cause material changes due to the diffusion of the metallic material into the silicon comes, reducing the electrical properties of the thermocouple to be changed.

In a further preferred embodiment of the invention Arrangement comprises the base layer on which the first and second Rail are applied, silicon nitride. The thickness of the base layer is preferably substantially between 100 nm and 1000 nm, in particular substantially at 300 nm. Below the base layer can be arranged at least in some areas a substrate. The Subareas under which there is no substrate are included often referred to as a membrane. The substrate itself is preferably silicon, but may optionally also quartz and / or comprise a polymer.

In a further embodiment may between the substrate and the Base layer further comprises an intermediate layer, for example a silicon oxide layer, be arranged. This layer preferably has a thickness in Substantially between 100 and 1000 nm, in particular of substantially 300 nm or 500 nm, on.

In a particularly preferred embodiment of the invention becomes through the thin-film thermocouple a so-called thermopile formed in which several thermocouples in are arranged in a row, with two adjacent thermocouples in the series are so interconnected that at the Terminal lying end of a first track of one of the adjacent Thermocouples with the lying at the junction end of a second path of the other of the adjacent thermocouples a diffusion barrier, in particular of titanium nitride and / or titanium and / or titanium silicide are electrically connected together. On this way, the temperature stability in a thermopile also on the side of the junction by using a corresponding diffusion barrier ensured.

The The thermocouple arrangement described above is preferably in a thermoelectric sensor used, its sensing on the generation an electrical voltage due to temperature change based. The thermoelectric sensor contains at least one of the thermocouple arrangements according to the invention. The configuration of the sensor is preferably such that the thermocouple assembly or the thermocouple assemblies in the sensor are designed such that under the connection points a substrate is located and provided under the measuring points no substrate is. In a further embodiment of the invention, the sensor comprises at least two opposing thermocouple assemblies.

In a variety of cases is the thermoelectric sensor an active sensor, where initially an output voltage is present, which then change in the sensing can. In this case, in the sensor adjacent to the measuring points Heating element, in particular comprising a conductor loop provided. As sensors in which the thermocouple arrangement according to the invention is used, in particular a flow sensor, a calorimeter, a catalytic gas sensor, an infrared sensor, a radiation sensor or a drop sensor into consideration. The structure a flow sensor is here in the detailed Description set forth. A calorimeter is used to determine generated and consumed amounts of heat or the specific Heat capacity of a substance and is similar constructed like a flow sensor. A catalytic gas sensor detects the temperature change due to a catalytic Reaction. An infrared sensor is on the thermocouple assembly a radiation-absorbing layer is provided which extends through the infrared radiation heats up and a temperature difference generated in the thermocouple assembly, which in turn to a corresponding Tension leads. An infrared sensor is thus a special one Embodiment of a radiation sensor. About that In addition, the inventive arrangement in Drop sensors are used, where the properties of a Liquid drop via appropriate thermocouples be recorded. The structure of such a drop sensor is, for example described in the document [2].

The The above-described thermocouple assembly may further be in a thermal generator for generating electrical energy from heat energy be used.

• a) Ausbilden einer oder mehrerer erster Bahnen aus Silizium auf einer Basisschicht;
• b) Ausbilden einer oder mehrerer Diffusionsbarrieren zumindest an einem Ende der ersten Bahn oder ersten Bahnen; und
• c) Ausbilden einer oder mehrerer zweiter Bahnen aus metallischem Material auf der Basisschicht, wobei zumindest ein Ende der zweiten Bahn oder der zweiten Bahnen auf einer in Schritt b) ausgebildeten Diffusionsbarriere liegt.

In addition to the above-described thermocouple arrangement and the thermoelectric sensor or thermogenerator, the invention further comprises a method for producing a thermocouple arrangement with the following steps:

• a) forming one or more first tracks of silicon on a base layer;
• b) forming one or more diffusion barriers at least at one end of the first web or first webs; and
• c) forming one or more second webs of metallic material on the base layer, wherein at least one end of the second web or the second webs lies on a diffusion barrier formed in step b).

By the use of the diffusion barrier in the manufacture of the thermocouple The thermocouple can be operated at much higher temperatures are used as silicon-based thermocouples according to the prior art.

In a preferred embodiment of the method the first web or the first webs polysilicon and / or the second lane or the second lanes titanium and / or tungsten titanium and / or Tungsten and / or the diffusion barrier or the diffusion barriers Titanium and / or titanium nitride and / or titanium silicide and / or the base layer Silicon nitride.

In a further, particularly preferred embodiment a plurality of first and second webs alternating in a row next to each other formed, wherein diffusion barriers at both ends of the first Trains are formed and at each end of the first track End of an adjacent second track on the diffusion barrier lies. In this way, the production of a thermopile is by the procedure allows.

The Processes involved in the formation of the first and second webs or the diffusion barrier are used, are of semiconductor technology known deposition processes, structuring processes and etching processes. In particular, the silicon of the first web or the first webs by be deposited an LPCVD process. The metallic material The second web or webs may be applied by sputtering. In particular, the material of the diffusion barrier also becomes by sputtering, preferably by means of reactive sputtering deposited.

In a particularly preferred variant of the invention Process is a passivation layer on top of the Thermocouple arrangement formed, wherein the passivation layer preferably silicon nitride. Here, a high-temperature deposition process in the form of an LPCVD process for depositing the passivation layer be used. In particular, an LPCVD process becomes temperature of substantially 500 ° C and more, especially between 800 and 850 ° C, used. In this way, a thermocouple arrangement is created, which is a mechanically very stable and chemically very resistant Has passivation layer with few defects.

In an embodiment of the method according to the invention is the base layer before performing step a) provided such that they on a substrate, in particular through an LPCVD process. In a further embodiment of the method according to the invention becomes the base layer before performing step a) in such a way that an intermediate layer is applied to a substrate and on the intermediate layer, the base layer, in particular by a LPCVD process, is being trained. The intermediate layer is z. B. formed by thermal oxidation, wherein the intermediate layer is preferably silica is. Preferably, the substrate becomes at least at the end of the process removed in a subregion of the base layer from below, in particular etched.

embodiments The invention will be described below with reference to the attached Figures detailed.

It demonstrate:

1 a plan view of a thermoelectric flow sensor with thermocouples according to an embodiment of the invention;

2 an enlarged partial view of the 1 showing in greater detail the thermocouples used in the flow sensor; and

3 a flowchart illustrating the inventive production of the flow sensor of 1 clarified.

1 shows in plan view a thermoelectric sensor, which is a base layer 1 wherein the area represented by the square with rounded edges represents the membrane of the sensor in which no further layer is provided below the base layer. To the left and right of the square are joined sections in which a silicon substrate is arranged below the base layer. In the embodiment of the 1 will the Base layer formed of a silicon nitride layer having a thickness of about 300 nm. Optionally, a silicon oxide layer is provided below this silicon nitride layer. On the base layer 1 are two thermopiles 2 respectively. 2 ' arranged, which are formed by a plurality of juxtaposed thermocouples. Each thermocouple comprises two parallel extending tracks 5 respectively. 6 , where for clarity in 1 only two of these webs are denoted by reference numerals. The train 5 Each thermocouple consists of polysilicon applied to the base layer, this material being indicated by simple hatching. The second train 6 Each thermocouple is made of a metallic material, with tungsten titanium being used in the embodiments described below. Wolframtitan is represented by crossed hatching in the figures.

The railways 5 and 6 Each thermocouple extends in parallel from the left and right edges of the membrane inwards. Furthermore, the thermocouples have connection points 3 on the left or right edge of the membrane, for reasons of clarity, only two of the connection points with the reference numeral 3 are provided. In addition, at the opposite end are measuring points 4 provided in the central region of the membrane, for reasons of clarity, only two of these measuring points by the reference numeral 4 are provided. The railways 5 and 6 of a respective thermocouple are via a respective measuring point 4 connected to each other at the measuring point, the end of the first polysilicon web is electrically connected to the end of the metallic tungsten titanium sheet. The connection takes place with the interposition of a diffusion barrier 7 , so that at the measuring point of the layer structure polysilicon diffusion barrier tungsten titanium is present. The diffusion barrier 7 is not out 1 visible, but in 2 and 3 played. The tungsten titanium thus forms the uppermost layer of this layer structure and is in 1 visible as a hatched square at the measuring point.

From this square extends the Wolframtitan as a train 6 to the connection point 3 , At the junction then the connection of the respective thermocouple with a next adjacent thermocouple, wherein at the junction of the same layer structure as at the measuring point is present, so that the polysilicon of the web 5 a next thermocouple again with the interposition of a diffusion barrier with the tungsten titanium of the web 6 of the preceding thermocouple is connected. The tungsten titanium is thus again the uppermost layer of the layer structure, which is represented by a corresponding hatched square at the connection points 3 becomes apparent. In this way, a series connection of a plurality of thermocouples is achieved, whereby a thermopile is formed. At the bottom of the two thermopiles 2 and 2 ' In each case, a contacting of the polysilicon with a corresponding connection trace 8th , which in the embodiment of the 1 also made of tungsten titanium. The connecting conductor tracks finally lead into corresponding voltage connections 9 , Similarly, the uppermost sheet of tungsten titanium of the thermopile extends 2 and 2 ' in a corresponding trace 8th , which also to a voltage connection 9 leads. This track is in the embodiment of the 1 made of tungsten titanium.

The thermoelectric flow sensor of 1 Also includes a central heating element in the form of a conductor loop 10 , which consists of tungsten titanium and is applied to the membrane. The conductor loop is closed at its lower end and leads at the upper end in corresponding supply lines 11 , which at voltage connections 12 end up. Via these connections, a heating voltage is applied, which causes a heating of the sensor such that at the measuring points 4 a temperature difference compared to the connection points 3 arises. This temperature difference leads to the generation of a corresponding voltage at the connection points 3 the thermocouples, wherein the voltage is amplified by the series connection of a plurality of thermocouples. The of the thermopiles 2 and 2 ' generated voltage can then be connected to the terminals 9 be measured.

On top of the thermoelectric sensor the 1 There is also a passivation layer, which is even closer to the description of the manufacturing method according to 3 is explained. This passivation layer is applied by LPCVD process at high temperatures of between 800 ° C and 850 ° C and leads to a very good chemical resistance, mechanical stability and low defect density of the thermoelectric sensor. That the application of the passivation layer at such temperatures is possible, according to the invention by the diffusion barrier of titanium nitride between the first web 5 and the second track 6 ensured at the measuring and connection points, because this is a diffusing the Wolframtitans the second lane 6 into the polysilicon of the first web 5 prevented. In conventional sensors, no such diffusion barrier is used, with the result that a passivation layer can only be applied at lower temperatures, since otherwise diffusion processes would occur. In the prior art, therefore, for applying the passivation layer instead of LPCVD processes PECVD Pro (PECVD = Plasma Enhanced Chemical Vapor Deposition) used, which can be carried out at lower temperatures.

2 shows a detailed view of a part of the thermopile 2 the thermoelectric flow sensor of 1 , One recognizes in 2 a section of the conductor loop 10 and a plurality of thermocouples with respective tracks 5 and 6 , which at the measuring points 4 or connection points 3 connected to each other. Out 2 Furthermore, by a black border of the square connection or measuring points, the diffusion barrier 7 reproduced, which is provided between tungsten titanium and polysilicon of the individual webs. For reasons of clarity reasons, the diffusion barrier with the reference numeral is only in two places 7 Mistake.

3 shows the manufacturing process of the thermoelectric sensor according to 1 in a sectional view, wherein a section along two opposite conductor tracks 6 the two thermopiles 2 respectively. 2 ' is reproduced. In the manufacturing process, starting from a silicon wafer 13 forming the substrate, first applying a silicon oxide layer (not shown) of about 500 nm thickness by thermal oxidation. On this oxide layer, a silicon nitride layer of about 300 nm is then applied, wherein the application of this layer takes place via an LPCVD process. This silicon nitride layer forms the base layer in the embodiment described here and is analogous to the preceding figures by the reference numeral 1 designated.

In the process step A is now the polysilicon of the first tracks 5 applied, due to the section along the (not yet applied) web 6 only the ends of the polysilicon are reproduced at the measuring and connection point. The polysilicon is applied by conventional processes known from semiconductor technology. In this case, first the polysilicon is deposited by means of an LPCVD process. Subsequently, the structuring of the polysilicon by means of lithography. In this case, photoresist is applied to the polysilicon, and then there is an exposure with a photomask, which corresponds to the desired structure of the first webs. Finally, the exposed photoresist is removed, and the paths are patterned using an etching process.

In process step B, the deposition of titanium nitride takes place as a diffusion barrier 7 on the polysilicon. It is thereby applied titanium nitride with a thickness of about 40 nm. The deposition takes place here by reactive sputtering, in which titanium is used as target and argon nitrogen is added to the reaction gas, so that depositing titanium nitride. The structuring is analogous to the deposition of polysilicon with a corresponding lithography and Ätzpro process. As etching process, a physico-chemical etching process with reactive ions is used (English: "Reactive Ion Etching"), which are contained in the plasma chlorine radicals, which cause the chemical etching.

Finally, in process step C, the deposition of tungsten titanium is carried out using a conventional sputtering process, wherein the surface is structured by lithography and etching in such a way that both the second orbits are formed by the tungsten titanium 6 as well as the conductor loop 10 of the heater is formed. As an etching process, wet-chemical etching is used for the tungsten titanium.

Finally, in process step D, the application of the passivation layer takes place 14 , which consists of silicon nitride. In the embodiment described here, the deposition of the passivation layer is carried out by means of an LPCVD process, which is carried out at high temperatures of approximately between 800 ° C and 850 ° C. The LPCVD process takes a total of six hours. Thereby, a passivation layer of about 300 nm is formed, which is much better in terms of chemical resistance, defect density and mechanical stability than deposition of the layer at lower temperatures, as is the case with a conventional PECVD process. Finally, in step E, an etching of the underside of the substrate takes place 13 in the central area up to the silicon nitride layer 1 , It is thus formed in the central region of the membrane of the sensor. This membrane is at the edge through the substrate 13 limited.

The according to 3 The thermal flow sensor produced serves to determine the flow velocity of liquids or gases flowing along the sensor, for example in the direction of the arrow P. In operation, the conductor loop 10 Heat is generated, which is a heating of the measuring points 4 the two thermopiles 2 respectively. 2 ' entails. The membrane, in which the thermocouples and the conductor loop of the heater are embedded, serves for the thermal insulation of heaters and thermocouples. The substrate 13 acts as a heat sink due to its heat capacity and thermal conductivity. The connection points of the thermopile in the region of the substrate 13 have a lower temperature than the measuring points, so that it comes to a thermoelectric voltage, which without fluid flow for both thermocouples 2 and 2 ' due to the symmetrical heat propagation from the heater is the same size. If there is a flow, the temperature profile shifts and the downstream measured temperature difference is greater than the upstream measured. This in turn leads to a difference between the voltages of the two thermopiles 2 and 2 ' , this voltage change depends on the flow rate. After suitable calibration of the sensor, this can thus be used to determine the fluid flow.

The inventors have carried out corresponding experiments in which they use the method according to 3 manufactured sensor compared with a conventional sensor, in which no diffusion barrier was used. In particular, SIMS analyzes (SIMS = secondary ion mass spectroscopy) were performed, in which the depth profile of a sample with diffusion barrier was compared with the depth profile of a sample without a diffusion barrier. It has been shown that diffusion barrier does not penetrate the tungsten titanium into the polysilicon, whereas without diffusion barrier the diffusion of tungsten titanium into the polysilicon occurs due to the high temperatures during the passivation, which leads to undesired delaminations and high contact resistances.

bibliography

• [1] US 5,474,619
• [2] "Droplet Characterization using Thermoelectric Microsensors", M. Maiwald, R. Buchner, J. Ni, V. Zollmer, I. Wirth, M. Busse, W. Benecke, W. Lang, Eurosensors 2006, Gothenburg

QUOTES INCLUDE IN THE DESCRIPTION

This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.

Cited patent literature

• US 5474619 [0041]

Cited non-patent literature

• - "Droplet Characterization using Thermoelectric Microsensors", M. Maiwald, R. Buchner, J.Ni, V. Zöllmer, I. Wirth, M. Busse, W. Benecke, W. Lang, Eurosensors 2006, Gothenburg [0041]

Claims (35)

Thin-film thermocouple arrangement with at least one on a base layer ( 1 ) arranged thermocouple with a connection point ( 3 ) and a measuring point ( 4 ) for generating an electrical voltage at the connection point ( 3 ) at a temperature difference between connection point and measuring point ( 3 . 4 ), wherein the at least one thermocouple is a first path ( 5 ) of silicon and a second web ( 6 ) of metallic material extending between the junction ( 3 ) and the measuring point ( 4 ), the first path ( 5 ) and the second web ( 6 ) via a diffusion barrier ( 7 ) at least at the measuring point ( 4 ) are interconnected. Arrangement according to claim 1, characterized in that the first track ( 5 ) Comprises polysilicon. Arrangement according to claim 1 or 2, characterized in that the second path ( 6 ) Titanium and / or tungsten titanium and / or tungsten. Arrangement according to claim 3, characterized that the tungsten titanium is essentially 90% by volume tungsten and 10% % By volume titanium or substantially 90% by weight tungsten and 10 Contains% by weight of titanium. Arrangement according to one of the preceding claims, characterized in that the diffusion barrier ( 7 ) Titanium nitride and / or titanium and / or titanium silicide, wherein when using titanium nitride to 21 parts of titanium, preferably 25 parts of nitrogen. Arrangement according to one of the preceding claims, characterized in that the first path ( 5 ) and / or the second web ( 6 ) each have a thickness substantially between 100 and 1000 nm, in particular of substantially 300 nm. Arrangement according to one of the preceding claims, characterized in that the diffusion barrier ( 7 ) has a thickness substantially between 10 and 100 nm, in particular of substantially 40 nm. Arrangement according to one of the preceding claims, characterized in that the arrangement comprises a passivation layer ( 14 ) on the top. Arrangement according to claim 8, characterized in that the passivation layer ( 14 ) Comprises silicon nitride. Arrangement according to claim 8 or 9, characterized in that the passivation layer ( 14 ) has a thickness substantially between 100 and 1000 nm, in particular of substantially 300 nm. Arrangement according to one of claims 7 to 9, characterized in that the passivation layer ( 14 ) has been applied by an LPCVD process at temperatures of substantially 500 ° C and more, especially between 800 and 850 ° C. Arrangement according to one of the preceding claims, characterized in that the base layer ( 1 ) Comprises silicon nitride and / or has a thickness of substantially between 100 nm and 1000 nm, in particular substantially 300 nm. Arrangement according to one of the preceding claims, characterized in that below the base layer ( 1 ) at least in some areas a substrate ( 13 ) is arranged. Arrangement according to claim 13, characterized the substrate comprises silicon and / or quartz and / or a polymer. Arrangement according to claim 13 or 14, characterized in that between the substrate ( 13 ) and the base layer ( 1 Further, an intermediate layer, in particular a silicon oxide layer is arranged, which preferably has a thickness substantially between 100 and 1000 nm, in particular of substantially 500 nm. Arrangement according to one of the preceding claims, characterized in that a plurality of thermocouples are arranged in a row, wherein two adjacent thermocouples in the row are each connected to each other in such a way that at the junction ( 3 ) lying end of a first track ( 5 ) of one of the adjacent thermocouples with the one at the junction ( 3 ) end of a second track ( 6 ) of the other of the adjacent thermocouples via a diffusion barrier ( 7 ), in particular of titanium nitride and / or titanium and / or titanium silicide, are electrically connected to one another. Thermoelectric sensor whose sensing is based on the generation of an electrical voltage by temperature change, comprising one or more thermocouple arrangements ( 2 . 2 ' ) according to any one of the preceding claims. Sensor according to claim 17, characterized in that the thermocouple arrangement ( 2 . 2 ' ) or thermocouple arrangements ( 2 . 2 ' ) are formed such that under the connection points ( 3 ) a substrate ( 13 ) and under the measuring points ( 4 ) no substrate is provided. Sensor according to claim 18, characterized in that the sensor comprises at least two opposing thermocouple arrangements ( 2 . 2 ' ) having. Sensor according to one of claims 17 to 19, characterized in that adjacent to the measuring points ( 4 ) a heating element ( 10 ), in particular comprising at least one conductor loop, is provided. Sensor according to one of claims 17 to 20, characterized in that the sensor is a flow sensor or a calorimeter or a catalytic gas sensor or an infrared sensor or a radiation sensor or a drop sensor. Thermal generator for generating electrical energy from heat energy, comprising one or more thermocouple arrangements ( 2 . 2 ' ) according to one of claims 1 to 17. Method for producing a thermocouple arrangement ( 2 . 2 ' ) according to one of claims 1 to 17, comprising the steps: a) forming one or more first webs ( 2 ) of silicon on a base layer ( 1 ); b) forming one or more diffusion barriers ( 7 ) at least at one end of the first path ( 5 ) or first tracks ( 5 ); c) forming one or more second webs of metallic material on the base layer ( 1 ), wherein at least one end of the second path ( 6 ) or second tracks ( 6 ) on a diffusion barrier formed in step b) ( 7 ) lies. Method according to claim 23, characterized in that the first web ( 5 ) or the first tracks ( 5 ) Polysilicon and / or the second web or the second webs ( 6 ) Titanium and / or tungsten titanium and / or tungsten and / or the diffusion barrier ( 7 ) or the diffusion barriers ( 7 ) Titanium and / or titanium nitride and / or titanium silicide and / or the base layer ( 1 ) Comprises silicon nitride. Method according to claim 23 or 24, characterized in that a plurality of first and second webs ( 5 . 6 ) are formed alternately in series next to each other, wherein the diffusion barrier ( 7 ) at both ends of the first tracks ( 2 ) and at each end of a first track ( 5 ) one end of an adjacent second web ( 6 ) on the diffusion barrier ( 7 ) lies. Method according to one of claims 23 to 25, characterized in that the first and second tracks ( 5 . 6 ) or the first and second lanes ( 5 . 6 ) as well as the diffusion barrier or the diffusion barriers ( 7 ) are applied by means of deposition processes, structuring processes and etching processes. Method according to one of claims 23 to 26, characterized in that the silicon of the first web ( 5 ) or first tracks ( 5 ) is applied by a LPCVD process. Method according to one of claims 23 to 27, characterized in that the metallic material of the second web ( 6 ) or second tracks ( 6 ) is applied by sputtering. Method according to one of claims 23 to 28, characterized in that the material of the diffusion barrier ( 7 ) is applied by sputtering, in particular by reactive sputtering. Method according to one of claims 23 to 29, characterized in that a passivation layer, in particular comprising silicon nitride, on top of the thermocouple arrangement ( 2 . 2 ' ) is formed. Method according to claim 30, characterized that the passivation layer by an LPCVD process at temperatures of substantially 500 ° C and more, especially between 800 and 850 ° C, is applied. Method according to one of claims 23 to 31, characterized in that the base layer ( 1 ) before performing step a) such that it is deposited on a substrate ( 13 ), in particular by an LPCVD process. Method according to one of claims 23 to 31, characterized in that the base layer ( 1 ) before performing step a) such that on a substrate ( 13 ) An intermediate layer is applied and on the intermediate layer, the base layer, in particular by an LPCVD process is formed. Method according to claim 33, characterized that the intermediate layer formed by thermal oxidation is, wherein the intermediate layer is preferably silica. Method according to one of claims 32 to 34, characterized in that the substrate ( 13 ) at least in a subregion of the base layer ( 1 ) is removed from below, in particular etched off.