DE102007019795B4 - Chip module and method for manufacturing this chip module - Google Patents
Chip module and method for manufacturing this chip module Download PDFInfo
- Publication number
- DE102007019795B4 DE102007019795B4 DE102007019795A DE102007019795A DE102007019795B4 DE 102007019795 B4 DE102007019795 B4 DE 102007019795B4 DE 102007019795 A DE102007019795 A DE 102007019795A DE 102007019795 A DE102007019795 A DE 102007019795A DE 102007019795 B4 DE102007019795 B4 DE 102007019795B4
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- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
Chipmodul mit:
– einem Trägersubstrat (1), das eine Chipoberfläche (2) und eine der Chipoberfläche (2) gegenüberliegende Kontaktfeldoberfläche (3) aufweist,
– einem Chip (11), der auf der Chipoberfläche (2) des Trägersubstrats (1) befestigt ist und mindestens einen Chipanschlusskontakt (9) aufweist,
– zumindest einem Kontaktfeld (4), das an der Kontaktfeldoberfläche (3) ausgebildet ist,
– zumindest einem Durchgang (6), der im Trägersubstrat (1) zwischen der Kontaktfeldoberfläche (3) und der Chipoberfläche (2) ausgebildet ist,
– mindestens einer von einem Draht (5) gebildeten elektrischen Verbindung zwischen dem zumindest einen Chipanschlusskontakt (9) und dem zumindest einen Kontaktfeld (4), wobei der Draht (5) mit dem Kontaktfeld (4) mittels Drahtbondverbindung (8a) verbunden ist,
– einem Stabilisierungsmaterial (7), das in den Durchgang (6) eingebracht ist und von dem der Draht (5) zusätzlich zu der Drahtbondverbindung (8a) an dem Kontaktfeld (4) gegen ein Abreißen von dem Kontaktfeld (4) fixiert ist, und
– ein...Chip module with:
A carrier substrate (1) which has a chip surface (2) and a contact field surface (3) lying opposite the chip surface (2),
A chip (11) which is fixed on the chip surface (2) of the carrier substrate (1) and has at least one chip connection contact (9),
At least one contact field (4) formed on the contact pad surface (3),
At least one passage (6) formed in the carrier substrate (1) between the contact pad surface (3) and the chip surface (2),
At least one electrical connection formed by a wire (5) between the at least one chip connection contact (9) and the at least one contact field (4), the wire (5) being connected to the contact field (4) by means of wire bonding connection (8a),
- A stabilizing material (7) which is introduced into the passage (6) and of which the wire (5) in addition to the Drahtbondverbindung (8a) on the contact field (4) is fixed against tearing off of the contact pad (4), and
- one...
Description
Die Erfindung betrifft ein Chipmodul mit auf einem Trägersubstrat aufgebrachten Kontaktfeldern, wobei Chipanschlusskontakte mit den Kontaktfeldern elektrisch leitend verbunden sind.The invention relates to a chip module with contact fields applied to a carrier substrate, wherein chip connection contacts are electrically conductively connected to the contact fields.
Chipkarten haben einen breiten Anwendungsbereich, beispielsweise zur Datenspeicherung, zur Zugangskontrolle oder im Zahlungsverkehr.Smart cards have a wide range of applications, for example for data storage, access control or payment transactions.
Zwischen einem Schreib-Lese-Gerät und einer Chipkarte erfolgt beispielsweise ein kontaktbasierter Datentransfer. Hierfür sind auf einer Seite der Chipkarte zum Kontaktieren durch das Schreib-Lese-Gerätes Kontaktfelder ausgebildet. Alternativ kann ein Datentransfer auch kontaktlos erfolgen. Hierbei wird ein elektromagnetisches Feld zur Übertragung der Informationen moduliert und in einer im Chipkartenkörper integrierten Empfangsspule empfangen. Eine Kombination aus diesen beiden Datentransfermöglichkeiten besitzt die so genannte Dual-Interface-Karte, die sowohl über Möglichkeiten zum kontaktbasierten, als auch zum kontaktlosen Übertragen von Informationen verfügt.For example, a contact-based data transfer occurs between a read-write device and a chip card. For this purpose, contact fields are formed on one side of the chip card for contacting by the read-write device. Alternatively, a data transfer can also be made contactless. In this case, an electromagnetic field for transmitting the information is modulated and received in a receiving coil integrated in the chip card body. A combination of these two data transfer options has the so-called dual-interface card, which has both options for contact-based, as well as contactless information transfer.
Zur Herstellung einer Chipkarte, wird üblicherweise ein Chipmodul in eine Kavität eines Chipkartenkörpers eingebracht und beispielsweise durch ein Klebemittel mit dem Kartenkörper der Chipkarte verbunden. Das Chipmodul umfasst dabei üblicherweise ein Trägersubstrat, auf welchem Kontaktfelder aufgebracht sind, wobei die Vorderseiten der Kontaktfelder nach der Montage des Chipmoduls in den Chipkartenkörper noch zugänglich sind, und einen Halbleiterchip, der auf einer der Kontaktfelder gegenüberliegenden Seite des Trägersubstrats auf das Trägersubstrat aufgebracht ist. Die Trägersubstratseite, auf der die Kontaktfelder aufgebracht sind, wird im Folgenden als Kontaktfeldoberfläche, die Trägersubstratseite, auf der der Chip befestigt ist, als Chipoberfläche bezeichnet. In das Trägersubstrat sind Durchgänge, auch als Durchkontaktierungen oder Bondlöcher bezeichnet, eingebracht, die es ermöglichen, die Chipanschlusskontakte des Halbleiterchips mit den Kontaktfeldern auf der Kontaktfeldoberfläche mittels Bonddrähten, hier fortlaufend als Draht benannt, elektrisch zu verbinden.To produce a chip card, a chip module is usually introduced into a cavity of a chip card body and connected, for example, by an adhesive to the card body of the chip card. The chip module usually comprises a carrier substrate on which contact fields are applied, wherein the front sides of the contact fields are still accessible after the chip module has been mounted in the chip card body, and a semiconductor chip which is applied to the carrier substrate on a side of the carrier substrate opposite the contact fields. The carrier substrate side on which the contact pads are applied is referred to below as the contact pad surface, the carrier substrate side, on which the chip is mounted, as the chip surface. Passages, also referred to as plated-through holes or bonding holes, are introduced into the carrier substrate, making it possible to electrically connect the chip connecting contacts of the semiconductor chip with the contact fields on the contact field surface by means of bonding wires, here continuously referred to as wire.
Zum Schutz des Chipmoduls beziehungsweise des Chips mit seinen empfindlichen Bonddrähten erfolgt eine Verkapselung um den Chip und die Drähte.To protect the chip module or the chip with its sensitive bonding wires, an encapsulation takes place around the chip and the wires.
Die Kontaktfelder sind meist als metallisierte Schichten ausgebildet, so ist beispielsweise auf eine Kupferschicht, eine Nickelschicht gefolgt von einer Goldschicht mittels galvanischen Verfahrens aufgebracht.The contact fields are usually formed as metallized layers, so for example, applied to a copper layer, a nickel layer followed by a gold layer by means of galvanic process.
Aus Dokument
In Dokument
In Dokument
Eine übliche Belastung im täglichen Gebrauch ist das Biegen der Chipkarte zum Beispiel beim Tragen der Chipkarte in einer Geldbörse in einer Hosentasche bzw. im Versand durch Sortieranlagen. Dabei kommt es zu dreidimensionalen Relativbewegungen des Trägersubstrates, welches im Folgenden als mechanischer Stress bezeichnet wird.A common burden in daily use is the bending of the chip card, for example, when carrying the smart card in a purse in a trouser pocket or in shipping through sorting. This results in three-dimensional relative movements of the carrier substrate, which is referred to below as mechanical stress.
Durch die Verkapselung ist der Draht fest in der Verkapselungsmasse verankert. Im Durchgang ist die Verkapselungsmasse beabstandet vom Kontaktfeld, bzw. konstruktionsbedingt unzureichend haftend mit dem Kontaktfeld verbunden. Durch den mechanischen Stress kommt es zu einer Delamination zwischen Trägersubstrat und Verkapselungsmasse. Durch die damit verbundene Vergrößerung des Abstandes der Verkapselungsmasse zum Kontaktfeld sowie der festen Verankerung des Drahtes in der Verkapselungsmasse wirken Zugkräfte auf den Draht im Durchgang. Eine übliche Drahtbondverbindung zwischen Draht und Kontaktfeld kann den Zugkräften des Drahtes im Extremfall nicht ausreichend standhalten. Der daraus resultierende Drahtabriss hat zumeist einen elektrischen Ausfall des Chips zur Folge.Due to the encapsulation of the wire is firmly anchored in the encapsulant. In the passage, the encapsulant is spaced from the contact field, or due to the design insufficiently adhering to the contact field. The mechanical stress causes delamination between the carrier substrate and the encapsulant. Due to the associated increase in the distance of the encapsulant to the contact field and the fixed anchoring of the wire in the encapsulant tensile forces act on the wire in the passage. A usual Drahtbondverbindung between wire and contact pad can not withstand the tensile forces of the wire in extreme cases. The resulting wire breakage usually results in an electrical failure of the chip.
Es ist daher ein Chipmodul mit einem Trägersubstrat, das eine Chipoberfläche und eine der Chipoberfläche gegenüberliegende Kontaktfeldoberfläche aufweist, einem Chip, der auf der Chipoberfläche des Trägersubstrats befestigt ist und mindestens einen Chipanschlusskontakt aufweist, zumindest einem Kontaktfeld, das an der Kontaktfeldoberfläche ausgebildet ist, zumindest ein Durchgang, der im Trägersubstrat zwischen der Kontaktfeldoberfläche und der Chipoberfläche ausgebildet ist, mindestens einer von einem Draht gebildeten elektrischen Verbindung zwischen dem zumindest einen Chipanschlusskontakt und dem zumindest einen Kontaktfeld, wobei der Draht mit dem Kontaktfeld mittels Drahtbondverbindung verbunden ist, einem Stabilisierungsmaterial, das in den Durchgang eingebracht ist und von dem der Draht zusätzlich zu der Drahtbondverbindung an dem Kontaktfeld gegen ein Abreißen von dem Kontaktfeld fixiert ist, und ein Verkapselungsmaterial, das von dem Stabilisierungsmaterial verschieden ist und von dem der Chip und der Draht eingeschlossen sind und der zumindest eine Durchgang zumindest teilweise abgedeckt ist, vorgesehen.It is therefore a chip module with a carrier substrate, which has a chip surface and one of the chip surface opposite Has at least one contact pad formed on the contact pad surface, at least one passage formed in the carrier substrate between the contact pad surface and the chip surface, at least one of at least one contact pad surface, a chip, which is mounted on the chip surface of the carrier substrate and has at least one chip connection contact a wire formed electrical connection between the at least one chip terminal contact and the at least one contact pad, wherein the wire is connected to the contact pad by means of wire bonding, a stabilizing material, which is introduced into the passage and of which the wire in addition to the Drahtbondverbindung on the contact pad against a Tear off of the contact pad is fixed, and an encapsulation material that is different from the stabilizing material and of which the chip and the wire are included and the at least one passage at least partially covered is provided.
Weiterhin ist ein Verfahren zum Herstellen einer elektrischen Verbindung zwischen einem Chip und einem Kontaktfeld vorgesehen, bei dem der Chip auf einer Chipoberfläche eines Trägersubstrates aufgesetzt wird und zur elektrischen Verbindungsherstellung eine Drahtbondverbindung ausgebildet wird, die an einem Chipanschlusskontakt des Chips angesetzt wird und durch einen Durchgang im Trägersubstrat hindurch mit einem der Chipoberfläche gegenüberliegend angeordneten Kontaktfeld elektrisch leitend verbunden wird. In den Durchgang wird ein Stabilisierungsmaterial eingebracht, von dem der Draht zusätzlich zu der Drahtbondverbindung gegen ein Abreißen von dem Kontaktfeld fixiert wird. Der Chip und der Draht werden von einem Verkapselungsmaterial eingeschlossen, welches von dem Stabilisierungsmaterial verschieden ist und von welchem der Durchgang zumindest teilweise abgedeckt wird.Furthermore, a method for producing an electrical connection between a chip and a contact pad is provided, in which the chip is placed on a chip surface of a carrier substrate and for electrical connection preparation a wire bond connection is made, which is attached to a chip connection contact of the chip and through a passage in the Carrier substrate is electrically conductively connected to one of the chip surface oppositely arranged contact field. A stabilizing material is introduced into the passageway from which the wire is fixed against tearing away from the contact pad in addition to the wire bond connection. The chip and the wire are enclosed by an encapsulation material which is different from the stabilization material and from which the passage is at least partially covered.
Nachfolgend wird die Erfindung anhand von Ausführungsbeispielen mit Bezugnahme auf die Zeichnungen erläutert, wobei in den Figuren gleiche oder gleich wirkende Bestandteile jeweils mit den gleichen Bezugszeichen gekennzeichnet sind. Die dargestellten Elemente sind nicht als maßstabsgerecht anzusehen, vielmehr können einzelne Elemente zum besseren Verständnis übertrieben groß beziehungsweise übertrieben vereinfacht dargestellt sein. Es zeigen:The invention will be explained below with reference to embodiments with reference to the drawings, wherein in the figures the same or equivalent components are each identified by the same reference numerals. The illustrated elements are not to be considered as true to scale, but individual elements may be exaggerated in size or exaggerated simplified for better understanding. Show it:
In
Der im Trägersubstrat
Das Stabilisierungsmaterial
Durch das Aufbringen des Chips
Zum Schutz des Chips
Bruchmechanisch robuste Chipkartenmodule erhält man beispielsweise, wenn die Verkapselung in der so genannten Transfer-Molding-Technologie ausgeführt wird.Break-mechanically robust chip card modules are obtained, for example, when the encapsulation is carried out in the so-called transfer molding technology.
Die Öffnung der Durchgänge
In
Das Material des Drahtes ist beispielsweise Gold.The material of the wire is, for example, gold.
Die Kontaktierung des Drahtes
Unter Bildung eines Bogens ist der Draht
Wesentlicher Unterschied zu
Zur Ausbildung der Kontaktfelder auf der Kontaktfeldoberfläche
Zur Stabilisierung des Drahtes
Durch die Verwendung von Lotmaterial ist eine Lötverbindung und damit auch eine intermetallische Verbindung zwischen Stabilisierungsmaterial
Da der Draht
Alternativ können die Kontaktfelder
In
Eine elektrisch leitende Verbindung vom Chipanschlusskontakt
In
Wenn das Chipmodul als eine Chipkarte mit Dual-Interface vorgesehen ist, benötigt man neben den dem ISO-Standard folgenden Kontaktfeldern
Ferner umfassen diese Dual-Interface Chipkartenmodul eine Leiterbahnanordnung, um die Empfangsspule zu kontaktieren. Auch diese Leiterbahnanordnung umfassen Anschlusskontakte, die über Drähte
Eine weitere Ausgestaltung der Durchkontaktierung ist in
Zur Verbindung der Kontaktfelder
Die gezeigte Drahtbondverbindung
Es sei darauf hingewiesen, dass die in den
BezugszeichenlisteLIST OF REFERENCE NUMBERS
- 11
- Trägersubstratcarrier substrate
- 22
- Chipoberflächechip surface
- 33
- KontaktfeldoberflächeContact Field surface
- 44
- Kontaktfeld, MetallisierungContact field, metallization
- 4a4a
- Kupferbeschichtungcopper coating
- 4b4b
- Nickelbeschichtungnickel coating
- 4c4c
- Goldbeschichtunggold coating
- 55
- Drahtwire
- 66
- Durchgangpassage
- 77
- Stabilisierungsmaterialstabilizing material
- 8a8a
- Drahtbondverbindung, Wedge-KontaktWire bond, wedge contact
- 8b8b
- Drahtbondverbindung, Nailhead-KontaktWire bond, nailhead contact
- 99
- ChipanschlusskontaktChip connection contact
- 1010
- Verkapselungencapsulation
- 1111
- Chipchip
- 1212
- KleberGlue
Claims (19)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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DE102007019795A DE102007019795B4 (en) | 2007-04-26 | 2007-04-26 | Chip module and method for manufacturing this chip module |
JP2008115763A JP2008277825A (en) | 2007-04-26 | 2008-04-25 | Chip module, and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE102007019795A DE102007019795B4 (en) | 2007-04-26 | 2007-04-26 | Chip module and method for manufacturing this chip module |
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DE102007019795A1 DE102007019795A1 (en) | 2008-11-06 |
DE102007019795B4 true DE102007019795B4 (en) | 2012-10-04 |
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DE102007019795A Expired - Fee Related DE102007019795B4 (en) | 2007-04-26 | 2007-04-26 | Chip module and method for manufacturing this chip module |
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JP (1) | JP2008277825A (en) |
DE (1) | DE102007019795B4 (en) |
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JP2002176125A (en) * | 2000-12-06 | 2002-06-21 | Nikon Corp | Semiconductor device, mounting method of semiconductor element, alignment method thereof |
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GB2047474A (en) * | 1978-10-19 | 1980-11-26 | Cii Honeywell Bull | A strip carrying devices for processing electrical signals, and a method of producing the strip |
US4701236A (en) * | 1985-04-12 | 1987-10-20 | U.S. Philips Corporation | Method of manufacturing an electronic identification card |
JPS63284831A (en) * | 1987-05-18 | 1988-11-22 | Nippon Inter Electronics Corp | Manufacture of hybrid integrated circuit |
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US5697149A (en) * | 1995-05-05 | 1997-12-16 | Schlumberger Industries | Method of coating an electronic component |
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DE102007019795A1 (en) | 2008-11-06 |
JP2008277825A (en) | 2008-11-13 |
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