DE102007008997A1 - Zusammensetzungen zum chemisch-mechanischen Polieren von Siliziumdioxid und Siliziumnitrid - Google Patents
Zusammensetzungen zum chemisch-mechanischen Polieren von Siliziumdioxid und Siliziumnitrid Download PDFInfo
- Publication number
- DE102007008997A1 DE102007008997A1 DE102007008997A DE102007008997A DE102007008997A1 DE 102007008997 A1 DE102007008997 A1 DE 102007008997A1 DE 102007008997 A DE102007008997 A DE 102007008997A DE 102007008997 A DE102007008997 A DE 102007008997A DE 102007008997 A1 DE102007008997 A1 DE 102007008997A1
- Authority
- DE
- Germany
- Prior art keywords
- weight
- polyvinylpyrrolidone
- mol
- composition
- composition according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/372,321 US20070210278A1 (en) | 2006-03-08 | 2006-03-08 | Compositions for chemical mechanical polishing silicon dioxide and silicon nitride |
US11/372,321 | 2006-03-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102007008997A1 true DE102007008997A1 (de) | 2007-09-13 |
Family
ID=38336245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102007008997A Withdrawn DE102007008997A1 (de) | 2006-03-08 | 2007-02-23 | Zusammensetzungen zum chemisch-mechanischen Polieren von Siliziumdioxid und Siliziumnitrid |
Country Status (7)
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008182179A (ja) * | 2006-12-27 | 2008-08-07 | Hitachi Chem Co Ltd | 研磨剤用添加剤、研磨剤、基板の研磨方法及び電子部品 |
DE102006061891A1 (de) * | 2006-12-28 | 2008-07-03 | Basf Se | Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid |
US8366959B2 (en) * | 2008-09-26 | 2013-02-05 | Rhodia Operations | Abrasive compositions for chemical mechanical polishing and methods for using same |
EP2500929B1 (en) * | 2009-11-11 | 2018-06-20 | Kuraray Co., Ltd. | Slurry for chemical mechanical polishing and polishing method for substrate using same |
CN102464946B (zh) * | 2010-11-19 | 2015-05-27 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及其应用 |
TWI573864B (zh) * | 2012-03-14 | 2017-03-11 | 卡博特微電子公司 | 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之cmp組成物 |
JP6088505B2 (ja) * | 2012-05-30 | 2017-03-01 | 株式会社クラレ | 化学機械研磨用スラリーおよび化学機械研磨方法 |
US9281210B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
JP6268069B2 (ja) * | 2014-09-12 | 2018-01-24 | 信越化学工業株式会社 | 研磨組成物及び研磨方法 |
JPWO2016158648A1 (ja) * | 2015-03-30 | 2018-03-01 | Jsr株式会社 | 化学機械研磨用処理組成物、化学機械研磨方法および洗浄方法 |
EP3394879A2 (en) * | 2015-12-22 | 2018-10-31 | Basf Se | Composition for post chemical-mechanical-polishing cleaning |
CN108117840B (zh) * | 2016-11-29 | 2021-09-21 | 安集微电子科技(上海)股份有限公司 | 一种氮化硅化学机械抛光液 |
US10954411B2 (en) * | 2019-05-16 | 2021-03-23 | Rohm And Haas Electronic Materials Cmp Holdings | Chemical mechanical polishing composition and method of polishing silicon nitride over silicon dioxide and simultaneously inhibiting damage to silicon dioxide |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW510917B (en) * | 1998-02-24 | 2002-11-21 | Showa Denko Kk | Abrasive composition for polishing semiconductor device and method for manufacturing semiconductor device using same |
GB9924502D0 (en) * | 1999-10-15 | 1999-12-15 | Biocompatibles Ltd | Polymer blend materials |
US6641632B1 (en) * | 2002-11-18 | 2003-11-04 | International Business Machines Corporation | Polishing compositions and use thereof |
US20050090104A1 (en) * | 2003-10-27 | 2005-04-28 | Kai Yang | Slurry compositions for chemical mechanical polishing of copper and barrier films |
US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
US20060083694A1 (en) * | 2004-08-07 | 2006-04-20 | Cabot Corporation | Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same |
JP2006100538A (ja) * | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 研磨用組成物及びそれを用いた研磨方法 |
US20070176141A1 (en) * | 2006-01-30 | 2007-08-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing interlevel dielectric layers |
-
2006
- 2006-03-08 US US11/372,321 patent/US20070210278A1/en not_active Abandoned
-
2007
- 2007-02-15 TW TW096105646A patent/TW200736375A/zh unknown
- 2007-02-23 DE DE102007008997A patent/DE102007008997A1/de not_active Withdrawn
- 2007-03-02 KR KR1020070020879A patent/KR20070092109A/ko not_active Application Discontinuation
- 2007-03-07 CN CNA2007100877140A patent/CN101054498A/zh active Pending
- 2007-03-08 JP JP2007058028A patent/JP2007273973A/ja active Pending
- 2007-03-08 FR FR0753722A patent/FR2898361A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JP2007273973A (ja) | 2007-10-18 |
KR20070092109A (ko) | 2007-09-12 |
TW200736375A (en) | 2007-10-01 |
CN101054498A (zh) | 2007-10-17 |
US20070210278A1 (en) | 2007-09-13 |
FR2898361A1 (fr) | 2007-09-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8139 | Disposal/non-payment of the annual fee |