DE102006059162B4 - Teilchenoptische Anordnung - Google Patents
Teilchenoptische Anordnung Download PDFInfo
- Publication number
- DE102006059162B4 DE102006059162B4 DE102006059162A DE102006059162A DE102006059162B4 DE 102006059162 B4 DE102006059162 B4 DE 102006059162B4 DE 102006059162 A DE102006059162 A DE 102006059162A DE 102006059162 A DE102006059162 A DE 102006059162A DE 102006059162 B4 DE102006059162 B4 DE 102006059162B4
- Authority
- DE
- Germany
- Prior art keywords
- ion beam
- processing system
- particle
- main axis
- beam processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 105
- 238000001493 electron microscopy Methods 0.000 claims abstract description 52
- 239000002245 particle Substances 0.000 claims abstract description 9
- 238000010894 electron beam technology Methods 0.000 claims description 44
- 230000005684 electric field Effects 0.000 claims description 24
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- SYHGEUNFJIGTRX-UHFFFAOYSA-N methylenedioxypyrovalerone Chemical compound C=1C=C2OCOC2=CC=1C(=O)C(CCC)N1CCCC1 SYHGEUNFJIGTRX-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001239 high-resolution electron microscopy Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
- H01J37/145—Combinations of electrostatic and magnetic lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006059162A DE102006059162B4 (de) | 2006-12-14 | 2006-12-14 | Teilchenoptische Anordnung |
| JP2009540623A JP5601838B2 (ja) | 2006-12-14 | 2007-11-23 | 粒子光学装置 |
| AT07846793T ATE533172T1 (de) | 2006-12-14 | 2007-11-23 | Teilchenoptische anordnung |
| EP07846793A EP2095391B1 (de) | 2006-12-14 | 2007-11-23 | Teilchenoptische anordnung |
| PCT/EP2007/010193 WO2008071303A2 (de) | 2006-12-14 | 2007-11-23 | Teilchenoptische anordnung |
| US12/448,229 US8217350B2 (en) | 2006-12-14 | 2007-11-23 | Particle optical arrangement |
| JP2013093279A JP5690863B2 (ja) | 2006-12-14 | 2013-04-26 | 粒子光学装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006059162A DE102006059162B4 (de) | 2006-12-14 | 2006-12-14 | Teilchenoptische Anordnung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE102006059162A1 DE102006059162A1 (de) | 2008-06-26 |
| DE102006059162B4 true DE102006059162B4 (de) | 2009-07-09 |
Family
ID=39362543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102006059162A Expired - Fee Related DE102006059162B4 (de) | 2006-12-14 | 2006-12-14 | Teilchenoptische Anordnung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8217350B2 (enExample) |
| EP (1) | EP2095391B1 (enExample) |
| JP (2) | JP5601838B2 (enExample) |
| AT (1) | ATE533172T1 (enExample) |
| DE (1) | DE102006059162B4 (enExample) |
| WO (1) | WO2008071303A2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006059162B4 (de) | 2006-12-14 | 2009-07-09 | Carl Zeiss Nts Gmbh | Teilchenoptische Anordnung |
| DE102008045336B4 (de) | 2008-09-01 | 2022-05-25 | Carl Zeiss Microscopy Gmbh | System zur Bearbeitung einer Probe mit einem Laserstrahl und einem Elektronenstrahl oder einem Ionenstrahl |
| DE102008049655A1 (de) | 2008-09-30 | 2010-04-08 | Carl Zeiss Nts Gmbh | Partikelstrahlsystem und Verfahren zum Betreiben desselben |
| DE102010001346B4 (de) | 2010-01-28 | 2014-05-08 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlgerät und Verfahren zum Betreiben eines Teilchenstrahlgeräts |
| DE102010001349B9 (de) | 2010-01-28 | 2014-08-28 | Carl Zeiss Microscopy Gmbh | Vorrichtung zum Fokussieren sowie zum Speichern von Ionen |
| DE102010001347A1 (de) | 2010-01-28 | 2011-08-18 | Carl Zeiss NTS GmbH, 73447 | Vorrichtung zur Übertragung von Energie und/oder zum Transport eines Ions sowie Teilchenstrahlgerät mit einer solchen Vorrichtung |
| DE102010008296A1 (de) * | 2010-02-17 | 2011-08-18 | Carl Zeiss NTS GmbH, 73447 | Laserbearbeitungssystem, Objekthalter und Laserbearbeitungsverfahren |
| DE102010011898A1 (de) | 2010-03-18 | 2011-09-22 | Carl Zeiss Nts Gmbh | Inspektionssystem |
| DE102010024625A1 (de) * | 2010-06-22 | 2011-12-22 | Carl Zeiss Nts Gmbh | Verfahren zum Bearbeiten eines Objekts |
| DE102011109449B9 (de) | 2011-08-04 | 2013-04-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum kalibrieren eines laserscanners, verwendung des verfahrens und bearbeitungssystem mit laserscanner |
| EP2811506B1 (en) * | 2013-06-05 | 2016-04-06 | Fei Company | Method for imaging a sample in a dual-beam charged particle apparatus |
| JP6404736B2 (ja) * | 2015-02-06 | 2018-10-17 | 株式会社日立ハイテクノロジーズ | 複合荷電粒子線装置 |
| CN111033676B (zh) | 2017-09-04 | 2022-08-30 | 株式会社日立高新技术 | 带电粒子线装置 |
| US10504684B1 (en) * | 2018-07-12 | 2019-12-10 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | High performance inspection scanning electron microscope device and method of operating the same |
| RU186334U1 (ru) * | 2018-10-19 | 2019-01-16 | Федеральное государственное бюджетное учреждение "Национальный исследовательский центр "Курчатовский институт" | Держатель для облучения образцов заряженными частицами |
| DE102018131609B3 (de) | 2018-12-10 | 2020-02-06 | Carl Zeiss Microscopy Gmbh | Partikelstrahlsystem und Verfahren zum Betreiben eines Partikelstrahlsystems |
| DE102018131614B3 (de) * | 2018-12-10 | 2020-02-06 | Carl Zeiss Microscopy Gmbh | Partikelstrahlsystem und Verfahren zum Betreiben eines Partikelstrahlsystems |
| DE102019133658A1 (de) * | 2019-12-10 | 2021-06-10 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Bearbeiten einer mikrostrukturierten Komponente |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6452173B1 (en) * | 1998-05-21 | 2002-09-17 | Seiko Instruments Inc. | Charged particle apparatus |
| US6855938B2 (en) * | 2002-07-19 | 2005-02-15 | Carl Zeiss Nts Gmbh | Objective lens for an electron microscopy system and electron microscopy system |
| EP1557867A1 (en) * | 2004-01-21 | 2005-07-27 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Focussing lens for charged particle beams |
| US20050184251A1 (en) * | 2004-02-24 | 2005-08-25 | Masamichi Oi | FIB-SEM complex apparatus |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4926054A (en) | 1988-03-17 | 1990-05-15 | Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh | Objective lens for focusing charged particles in an electron microscope |
| JP2811073B2 (ja) * | 1988-11-01 | 1998-10-15 | セイコーインスツルメンツ株式会社 | 断面加工観察装置 |
| JP3372138B2 (ja) | 1995-06-26 | 2003-01-27 | 株式会社日立製作所 | 走査形電子顕微鏡 |
| JP3474082B2 (ja) * | 1997-07-01 | 2003-12-08 | セイコーインスツルメンツ株式会社 | 電子線装置 |
| US6509564B1 (en) | 1998-04-20 | 2003-01-21 | Hitachi, Ltd. | Workpiece holder, semiconductor fabricating apparatus, semiconductor inspecting apparatus, circuit pattern inspecting apparatus, charged particle beam application apparatus, calibrating substrate, workpiece holding method, circuit pattern inspecting method, and charged particle beam application method |
| JP4162343B2 (ja) * | 1999-12-24 | 2008-10-08 | エスアイアイ・ナノテクノロジー株式会社 | 電子線装置 |
| JP4128487B2 (ja) * | 2003-06-02 | 2008-07-30 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| JP2006114225A (ja) | 2004-10-12 | 2006-04-27 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
| DE102006059162B4 (de) | 2006-12-14 | 2009-07-09 | Carl Zeiss Nts Gmbh | Teilchenoptische Anordnung |
-
2006
- 2006-12-14 DE DE102006059162A patent/DE102006059162B4/de not_active Expired - Fee Related
-
2007
- 2007-11-23 JP JP2009540623A patent/JP5601838B2/ja active Active
- 2007-11-23 US US12/448,229 patent/US8217350B2/en active Active
- 2007-11-23 EP EP07846793A patent/EP2095391B1/de active Active
- 2007-11-23 AT AT07846793T patent/ATE533172T1/de active
- 2007-11-23 WO PCT/EP2007/010193 patent/WO2008071303A2/de not_active Ceased
-
2013
- 2013-04-26 JP JP2013093279A patent/JP5690863B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6452173B1 (en) * | 1998-05-21 | 2002-09-17 | Seiko Instruments Inc. | Charged particle apparatus |
| US6855938B2 (en) * | 2002-07-19 | 2005-02-15 | Carl Zeiss Nts Gmbh | Objective lens for an electron microscopy system and electron microscopy system |
| EP1557867A1 (en) * | 2004-01-21 | 2005-07-27 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Focussing lens for charged particle beams |
| US20050184251A1 (en) * | 2004-02-24 | 2005-08-25 | Masamichi Oi | FIB-SEM complex apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2095391A2 (de) | 2009-09-02 |
| DE102006059162A1 (de) | 2008-06-26 |
| EP2095391B1 (de) | 2011-11-09 |
| JP5601838B2 (ja) | 2014-10-08 |
| JP2010512628A (ja) | 2010-04-22 |
| US20090309025A1 (en) | 2009-12-17 |
| JP5690863B2 (ja) | 2015-03-25 |
| JP2013191571A (ja) | 2013-09-26 |
| US8217350B2 (en) | 2012-07-10 |
| WO2008071303A3 (de) | 2008-09-12 |
| ATE533172T1 (de) | 2011-11-15 |
| WO2008071303A2 (de) | 2008-06-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8364 | No opposition during term of opposition | ||
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20130702 |