DE102004054062B3 - Soldering system for heavy-duty semiconductor circuit uses spray of solder droplets in stream of hot gas to build up deposit of solder on area to be soldered - Google Patents

Soldering system for heavy-duty semiconductor circuit uses spray of solder droplets in stream of hot gas to build up deposit of solder on area to be soldered Download PDF

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Publication number
DE102004054062B3
DE102004054062B3 DE102004054062A DE102004054062A DE102004054062B3 DE 102004054062 B3 DE102004054062 B3 DE 102004054062B3 DE 102004054062 A DE102004054062 A DE 102004054062A DE 102004054062 A DE102004054062 A DE 102004054062A DE 102004054062 B3 DE102004054062 B3 DE 102004054062B3
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Prior art keywords
solder
particles
deposit
area
lotdepots
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Expired - Fee Related
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DE102004054062A
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German (de)
Inventor
Mathias Kock
Ronald Eisele
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Danfoss Silicon Power GmbH
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Danfoss Silicon Power GmbH
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Priority to DE102004054062A priority Critical patent/DE102004054062B3/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/012—Soldering with the use of hot gas
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K2101/36—Electric or electronic devices
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    • H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
    • H05K2203/1333—Deposition techniques, e.g. coating
    • H05K2203/1344—Spraying small metal particles or droplets of molten metal

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  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

The solder spraying system uses a hot gas at a temperature below the melting temperature of the solder. The solder droplets or particles stick to the semiconductor workpiece and become sintered in place. Soldering operations may then take place to attach conductor wires etc. A DCB (Direct Copper Bonding) substrate may be used.

Description

Die Erfindung betrifft ein Verfahren zum Aufbringen eines Lotdepots für eine Lötverbindung an einem Leistungshalbleiter oder Leistungshalbleitersubstrat, insbesondere als Ersatz für das Aufbringen von Lotpasten mit Flußmitteln und Lotpreforms.The The invention relates to a method for applying a solder deposit for one solder on a power semiconductor or power semiconductor substrate, in particular as replacement for the application of solder pastes with flux and Lotpreforms.

In der Elektronikfertigung werden Bauteile in SMD-Technologie (engl. surface-mounted device technique) meist mittels eines Aufschmelzlötens (engl. reflow soldering) in Durchsteckmontage mit Wellenlöten (engl. wave soldering) verarbeitet. Hierbei kommen meistens Zinn-Blei- oder Zinn-Blei-Silber-Lot zum Einsatz. Deren Schmelztemperaturen lie gen bei ca. 180 °C, wobei Löttemperaturen zum Aufschmelzen dieser Lote von ca. 225 °C zum Einsatz kommen. Für den Fall, dass bleifreies Lot verwendet werden soll, liegen die Lottemperaturen sogar zwischen 240 und 265 °C.In The electronics manufacturing components in SMD technology (engl. Surface-mounted device technique) usually by means of reflow soldering (engl. reflow soldering) in through-hole mounting with wave soldering (engl. wave soldering). Tin-lead or tin-lead-silver solder is used. Their melting temperatures lie conditions at about 180 ° C, where soldering temperatures to melt these solders of about 225 ° C are used. In the case, that lead-free solder is to be used, are the solder temperatures even between 240 and 265 ° C.

Die zu verlötenden Bauelemente sind daher mindestens so ausgelegt, dass sie diesen Temperaturbereich aushalten. Allerdings begegnet man bisher einer Anzahl von Problemen, insbesondere bei bleifreien Lötungen, wie einem Entnetzen, einem Verschwimmen der Fügepartner, einer Verkippung der Fügepartner und dergleichen weiter, die man mit handwerklichen „Tricks" zu vermeiden sucht.The to be soldered Components are therefore at least designed so that they Withstand the temperature range. However, one encounters one so far Number of problems, especially lead-free soldering, like a Entnetzen, a blurring of the joining partners, a tilt of the joining partner and the like, which one tries to avoid with manual "tricks".

Weiter ergibt sich das Problem, dass DCB-Substrate (engl. direct copper bonding – z.B. Substrate mit einer isolierenden Keramikschicht) sich durch bei der Herstellung ergebende Verspannungen verwölben (meist konvex nach oben, so daß die untere Lötfläche konkav eingewölbt ist), und andererseits wärmeableitende Bodenplatten häufig leicht konvex nach oben vorgewölbt sind, um diese mechanisch leicht beim Anschrauben durch randseitig angeordnete Schrauben vorspannen zu können.Further the problem arises that DCB substrates (direct copper bonding - e.g. substrates with an insulating ceramic layer) during manufacture Warp resulting tension (mostly convex upward, so that the lower soldering surface concave vaulted is), and on the other hand heat dissipating Floor tiles frequently slightly convex upwards To make this mechanically easy when screwing through the edge to be able to pretension arranged screws.

Bisher ist kein Aufbringverfahren für Lotdepots bekannt, das bewirkt, dass Lot beim Auftragen sich diesen geometrischen Gegebenheiten anpaßt und insbesondere auch die Schichtstärke am Rand beim Aufschmelzen gewährleistet bleibt.So far is not an application method for Lotdepots known that causes solder when applying this adapts to geometric conditions and in particular the layer thickness guaranteed at the edge during melting remains.

Als Stand der Technik zu nennen sind die US 2003/0175559 A1, die ein Verfahren zum Erzeugen eines Wärmesenkenlaminats mit einer Schicht die elektrischen Materials beschreibt, bei der Schichten kinetisch aufgesprüht werden. Die beim Aufbringen eines Lotdepots auftretenden Probleme werden jedoch nicht erwähnt.When State of the art to call are the US 2003/0175559 A1, a A method of producing a heat sink laminate with a layer describing the electrical material at the Layers sprayed kinetically become. The problems encountered when applying a Lotdepots however, are not mentioned.

Aus der DE 103 20 740 A1 ist zudem ein Verfahren bekannt, bei dem zwei Teile miteinander verlötet werden und wobei das Lot auf einen Teil durch Kaltgasspritzen aufgebracht wird. Hier wird jedoch nur eine einheitliche Schichtdicke aufgebracht.From the DE 103 20 740 A1 In addition, a method is known in which two parts are soldered together and wherein the solder is applied to one part by cold gas spraying. Here, however, only a uniform layer thickness is applied.

In der DE 203 11 131 U1 ist schließlich ein Gehäusesystem für Computer offenbart, bei der ein Kühlkörper aus Aluminium mit einer Kupferschicht und einer Lötzinnschicht an einer Grundplatte aus Kupfer verbunden ist, jedoch nicht näher erläutert wird, wie dieses System hergestellt wird.In the DE 203 11 131 U1 Finally, a housing system for computers is disclosed, in which an aluminum heat sink with a copper layer and a Lötzinnschicht is connected to a base plate made of copper, but is not explained in more detail how this system is manufactured.

In der DE 100 45 783 A1 wird bondfähiges Beschichten von Leiterrahmen zur Montage von Halbleiterbauelementen mittels Kaltgasspritzen erläutert, wobei lediglich ein fortlaufendes Beschichten empfohlen wird. Dies kann die Aufbringung von Lot entstehenden Probleme nicht lösen.In the DE 100 45 783 A1 Bondable coating of lead frames for mounting semiconductor devices by cold gas spraying is discussed, with only continuous coating recommended. This can not solve the problem of solder deposition.

Weiter sind noch die WO 2004/091809 A2, die US 2004/0020676 A1, die DE 196 49 458 A1 und die US 6,306,684 B1 zu nennen, in der jeweils Kaltgas-Aufsprühen (so die ersten drei der vier genannten) bzw. ein Befestigungsverfahren mit einem Bleirahmen erläutert sind. Next are still the WO 2004/091809 A2, US 2004/0020676 A1, the DE 196 49 458 A1 and the US 6,306,684 B1 to name in each of which cold gas spraying (as the first three of the four mentioned) or a method of attachment with a lead frame are explained.

Aufgabe der Erfindung ist es Aufbringverfahren für Lotdepots zur Verfügung zu stellen, dass bewirkt, dass das Lot sich geometrischen Gegenheiten anpasst und insbesondere die Schichtstärke am Rand beim Aufschmelzen gewährleistet bleibt.task According to the invention, it is possible to use deposition processes for solder deposits that causes the solder to conform to geometric counterparts and in particular the layer thickness guaranteed at the edge during melting remains.

Die Merkmale des Oberbegriffes des Hauptanspruches sind aus der US 2003/0175559 A1 bekannt.The Features of the preamble of the main claim are from US 2003/0175559 A1 known.

Die gestellte Aufgabe wird erfindungsgemäß durch ein Verfahren gelöst, bei dem ein Lotdepot in Teilbereichen mit erhöhter Schichtdicke mittels eines Aufspritzverfahrens von Lotpartikeln erreicht wird. Nach dem Aufspritzen ist ein Lotmitteldepot ohne Flußmittel vorhanden, was bei einigen Anwendungen von Vorteil ist. Jedoch kann später zum Löten auch Flußmittel oder Ameisensäure hinzugegeben werden.The Asked object is achieved by a method in, at a Lotdepot in subregions with increased layer thickness by means of a spray-on of solder particles is achieved. After spraying is a Lotmitteldepot without flux present, which is advantageous in some applications. However, you can later for soldering also flux or formic acid be added.

Insbesondere erfolgt das Aufspritzen von Partikeln in einem Strom heißen Gases auf Teilbereiche des zur Bildung des Lotdepots bestimmten Gebietes, wobei die Temperatur des Gases (z.B. Luft) nicht mehr als die Schmelztemperatur der Partikel beträgt, so dass diese erst dann schmelzen, wenn sie auf das zu beschichtende Gebiet auftreffen, weil dann ihre kinetische Energie, die bei hohen Geschwindigkeiten von über 600 m/s sehr beträchtlich ist, in Wärmeenergie umgewandelt wird. Da die Kügelchen jedoch klein sind, kann die Energiemenge nach dem Aufschmelzen auch schnell abgeleitet werden, so dass der Auftrag am Ort verbleibt.Especially the spraying of particles takes place in a stream of hot gas on parts of the area designated for the formation of the Lot Depot, wherein the temperature of the gas (e.g., air) is not more than the melting temperature the particle is, so that they only melt when they are coated on the Impact area because then their kinetic energy at high Speeds of over 600 m / s is very considerable in heat energy is converted. Because the beads however small, the amount of energy after melting can also be be derived quickly so that the job remains in place.

Eine geeignete Variation einer Weiterbewegungsgeschwindigkeit ermöglicht es auch bei kontinuierlich sich änderndem Auftragsort innerhalb der Grenzen des zur Bildung des Lotdepots bestimmten Gebietes einen erhöhten Auftrag an vorbestimmten Orten vorzunehmen. Insbesondere bei einem rasterartigen Auftragen kann ortsgenau eine erhöhte Lotschichtdicke aufgebracht werden kann, um beispielsweise in der Mitte unter dem vorgesehenen Ort für einen DCB, der durch Temperaturspannungen schon aufgewölbt ist, ein erhöhtes Lotdepot anzuordnen, das beim Aufschmelzen sicher gleichmäßig das zu überbrückende Volumen ausfüllt.A suitable variation of a further movement speed makes it possible even with continuously changing Place of order within the limits of the formation of the solder deposit certain area increased Order to make at predetermined locations. Especially with a grid-like application can be applied location exactly increased solder layer thickness can be, for example, in the middle under the provided Place for a DCB, which is already bulged by temperature stresses, an elevated one Lotdepot to arrange, when melting safely evenly to be bridged volumes fills.

Bodenplatten wiederum werden meist so vorgebogen, dass die an dem Rande angeordneten Hauptbohrungen einen geringen Abstand zum Kühlkörper aufweisen, um die Bodenplatten zunächst im Mittenbereich aufliegen zu lassen, um dann gleichmäßig fest mit dem Kühlkörper eine Verbindung herzustellen. Hierdurch kann sich wiederum eine in der Mitte angeordnete Senke ergeben, die bei einem Verlöten des DCBs auf der Bodenplatte durch ein in der Mitte schichtdickeres Lotdepot ausgeglichen werden kann. Ein Verschwimmen des Lotpartners – beispielsweise in eine Senke – wird damit wesentlich weniger wahrscheinlich.floor tiles In turn, most are bent so that the arranged on the edge of the main holes have a small distance to the heat sink, first around the floor slabs To rest in the middle area, then evenly fixed with the heat sink a Make connection. This can turn one in the middle resulting sink when soldering the DCBs on the bottom plate can be compensated by a layer thicker solder deposit in the middle. Blurring of the Lotpartners - for example, in a sink - is so much less likely.

Weiter wird vorgeschlagen, andere als aus Lotmasse bestehende Partikel in definierter Menge beizumischen, um beispielsweise die thermischen Eigenschaften der Lötverbindung zu verbessern, indem metallische Partikel, z. B. Silberlegierungs- oder Kupferkügelchen beigegeben werden. Schließlich kann das Verfahren auch dazu genutzt werden, innerhalb des Lotdepots abstandhaltende, säulenartige Strukturen in engen Teilbereichen innerhalb des Lotdepots vorzusehen, die ein Verkippen des aufzulötenden Leistungshalbleiters oder Leistungshalbleitersubstrats verhindern. Dies kann dadurch geschehen, dass vor Aufbringung der Lotmasse zunächst diese säulenartigen Strukturen mittels des Aufspritzens von höher schmelzenden Materialien vorgesehen werden, oder nachträglich in das Lotdepot die höher schmelzenden Materialien unter Verdrängung der Lotmasse eingebracht werden.Further It is proposed that other than solder mass particles To mix in a defined amount, for example, the thermal properties the solder joint to improve by metallic particles, eg. B. silver alloy or copper globules be added. Finally, can The procedure can also be used within the Lotdepots distance-retaining, columnar Provide structures in narrow subareas within the Lotdepots, the one tilting the to be soldered Prevent power semiconductor or power semiconductor substrate. This can be done by first applying this before the solder mass columnar Structures by the injection of higher melting materials be provided or subsequently in the Lotdepot the higher introduced melting materials under displacement of the solder mass become.

Das erfindungsgemäße Verfahren zum Aufbringen eines Lotdepots für eine Lötverbindung an einem Leistungshalbleiter oder Leistungshalbleitersubstrat besteht also insbesondere aus dem Aufspritzen von Partikeln in einem Strom heißen Gases auf wenigstens Teilbereiche des zur Bildung des Lotdepots bestimmten Gebietes, wobei die Temperatur des Gases nicht mehr als die Schmelztemperatur der Partikel beträgt.The inventive method for applying a solder deposit for a solder joint on a power semiconductor or power semiconductor substrate ie in particular from the spraying of particles in a stream be called Gas on at least portions of the intended for the formation of the Lotdepots Area, where the temperature of the gas is not more than the melting temperature the particle is.

Dabei erfolgt das Aufspritzen der aus Lotmasse bestehenden Partikel unter kontinuierlicher Weiterbewegung des Auftragsortes innerhalb der Grenzen des zur Bildung des Lotdepots bestimmten Gebietes wobei durch Variieren der Geschwindigkeit der Weiterbewegung über den Weg in dem zur Bildung des Lotdepots bestimmten Gebietes eine innerhalb des Gebietes variierende Schichtdicke erreicht wird.there the spraying of the particles consisting of soldering mass takes place underneath continuous movement of the job within the borders the area determined for the formation of the Lotdepots by varying the speed of progression across the path to education area of the lot depot varies within the area Layer thickness is achieved.

Indem ein rasterartiger Weg abgefahren wird, können in Bereichen größerer gewünschter Schichtdicke mehrmals oder in engem Rasterabstand Partikel aufgespitzt werden. Dabei ist es auch in einer Variante möglich, andere als aus Lotmasse bestehende Partikel wenigstens als Beimengung zu Lotpartikeln zur Erzeugung besserer thermischer oder mechanischer Verbindungs- oder Ausdehnungseigenschaften wenigstens in definierten Auftragsschichten aufzuspritzen.By doing a raster-like path is traversed, in areas greater desired layer thickness be sharpened particles several times or at close spacing. It is also possible in a variant, other than made of solder Particles at least as admixture to Lotpartikeln for production better thermal or mechanical bonding or expansion properties at least in defined application layers aufzuspritzen.

Zur Erzeugung von bei geschmolzenem Lot den Abstand der Verbindungspartner haltenden, säulenartigen Strukturen kann in engen Teilbereichen innerhalb des Lotdepots der Auftrag von Partikeln im wesentlichen ohne Lotpartikel erfolgen, also eine tragende, nicht im Lot aufschmelzende Struktur geschaffen werden.to Generation of molten solder the distance of the connection partners holding, columnar Structures can be found in narrow subregions within the Lotdepots of the Application of particles essentially without solder particles, So created a load-bearing, not melting in the Lot structure become.

Claims (6)

Verfahren zum Aufbringen eines Lotdepots für eine Lötverbindung an einem Leistungshalbleiter oder Leistungshalbleitersubstrat, durch Aufspritzen von Partikeln in einem Strom heißen Gases auf wenigstens Teilbereiche des zur Bildung des Lotdepots bestimmten Gebietes, wobei die Temperatur des Gases nicht mehr als die Schmelztemperatur der Partikel beträgt, und das Aufspritzen der aus einer Lotmasse bestehenden Partikel unter Weiterbewegung des Auftragortes innerhalb der Grenzen des zur Bildung des Lotdepots bestimmten Gebietes erfolgt, dadurch gekennzeichnet, dass innerhalb des zur Bildung des Lotdepots bestimmten Gebietes eine gewünscht variierende Schichtdicke aufgebracht wird.A method for applying a solder deposit for a solder joint to a power semiconductor or power semiconductor substrate, by spraying particles in a stream of hot gas on at least portions of the area determined to form the Lotdepots, wherein the temperature of the gas is not more than the melting temperature of the particles, and Injection of the particles consisting of a solder mass, with further movement of the application site within the limits of the region intended for forming the solder deposit, characterized in that a desired varying layer thickness is applied within the area intended for forming the solder deposit. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass die gewünscht variierende Schichtdicke durch ein Variieren der Geschwindigkeit der Weiterbewegung über den Weg in dem zur Bildung des Lotdepots bestimmten Gebiet erfolgt.Method according to claim 1, characterized in that that the desired varying layer thickness by varying the speed the further movement over the path in the area designated for the formation of the Lotdepots takes place. Verfahren nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass ein rasterartiger Weg abgefahren wird, und in Bereiche größerer gewünschter Schichtdicke mehrmals oder in engem Rasterabstand Partikel aufgespritzt werden.Method according to one of the preceding claims, characterized characterized in that a grid-like path is traveled, and in areas larger desired Layer thickness sprayed several times or in close spacing particles become. Verfahren nach einem der vorangehenden Ansprüche, gekennzeichnet durch Aufspritzen anderer als aus Lotmasse bestehender Partikel wenigstens als Beimengung zu Lotpartikeln zur Erzeugung besserer thermischer oder mechanischer Verbindungs- oder Ausdehnungseigenschaften wenigstens in definierten Auftragsschichten. Method according to one of the preceding claims, characterized by spraying other than solder mass consisting of particles at least as admixture to solder particles to produce better thermal or mechanical connection or expansion properties at least in defined application layers. Verfahren nach Anspruch 4, dadurch gekennzeichnet, daß zur Erzeugung von bei geschmolzenem Lot Abstand haltenden, säulenartigen Strukturen in engen Teilbereichen innerhalb des Lotdepots der Auftrag von Partikeln im Wesentlichen ohne Lotpartikel erfolgt.Method according to claim 4, characterized in that that to Generation of molten solder spacing, columnar Structures in narrow subareas within the Lotdepots the order of particles essentially without solder particles. Verfahren nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, daß das Aufspritzen eine flußmittelfreie Lotmasse als Lotdepot deponiert.Method according to one of the preceding claims, characterized characterized in that Spraying a flux-free Lot mass deposited as a solder depot.
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